Characterization of 150m thick epitaxial silicon pad detectors from different producers
after 24 GeV/c proton irradiation
Herbert HoedlmoserHerbert Hoedlmoser(1)(1), , Michael MollMichael Moll(1)(1), , Jaako HaerkoenenJaako Haerkoenen(2)(2), Katharina Kaska, Katharina Kaska(1)(1), , Matthias KronbergerMatthias Kronberger(1)(1), Julia Trummer, Julia Trummer(1)(1), Pierre Rodeghiero, Pierre Rodeghiero(3)(3)
(1)(1) CERN- PH-DT2 - Geneva – Switzerland CERN- PH-DT2 - Geneva – Switzerland(2) (2) Helsinki Institute of Physics – Helsinki - FinlandHelsinki Institute of Physics – Helsinki - Finland
(3) (3) UniversitUniversitéé Catholique de Louvain – Louvain - Belgium Catholique de Louvain – Louvain - Belgium
10th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Vilnius, Lithuania, 4-6 June 2007
Material, Detectors, Irradiation and Measurements Detector Characterization (IV, CV, CCE, TCT) Comparison to previous work Preliminary conclusions, open questions and further work
Outline:
Michael Moll – 10th RD50 Workshop, June 2007 -2-
RD50 The epitaxial silicon Produced by ITME (Institute of Electronic Materials Technology, Warzawa, Poland)
100 mm wafer n-type silicon
Epi-layer: 150m, <111>, P-doped, ~500 cm Substrate: 525m, <111>, Sb-doped, 0.015 cm
p-type silicon Epi-layer: 150m, <111>, P-doped, ~1000 cm Substrate: 525m, <111>, B-doped, 0.015 cm
0 50 100 150 200depth [m]
10-210-1100101102103
resi
stiv
ity [c
m]
p-type
n-type
[M.Moll]
Spreading Resistance Measurement (ITME)
Michael Moll – 10th RD50 Workshop, June 2007 -3-
RD50 The detectors
Detectors produced from epi-wafers of same batch by: CNM (Centro National de Microelectronics, Barcelona, Spain) ITC-IRST (Microsystems Division, Povo, Trento, Italy) HIP (Helsinki Institute of Physics, Helsinki, Finland)
different masks used (some containing also strip detectors)
Michael Moll – 10th RD50 Workshop, June 2007 -4-
RD50 Detectors from CNM Barcelona Detectors from pure pad mask (CERN-RADMON project)
CNM-11 & CNM-22 size 0.5 x 0.5 cm2
9 guard rings p-type: p-stop ring
Detectors from strip mask (RD50 project) RD50-16 & RD50-23 size 0.5 x 0.5 cm2
x guard rings x-type: x-spray
0.5 cm
0.5 cm
Michael Moll – 10th RD50 Workshop, June 2007 -5-
RD50 Detectors from IRST and HIP HIP detectors - pure pad mask (CERN-RADMON project)
HIP-004 size 0.5 x 0.5 cm2
17 guard rings only n-type used
Detectors from strip mask (SMART-RD50 project) ITC-W11 size 0.37 x 0.37 cm2
11 guard rings only n-type used
Michael Moll – 10th RD50 Workshop, June 2007 -6-
RD50 Before irradiation
Detector series Depletion Voltage (CV)
Vdep [V]
HIP-004 (n-type) 147.4 + 3.6
ITC-W11 (n-type) 150.0 + 4.9
CNM-11 (n-type) 154.6 + 7.5
RD50-23 (n-type) 155.0 + 3.8
CNM-22 (p-type) 213.7 + 12.7
Michael Moll – 10th RD50 Workshop, June 2007 -7-
RD50 Experimental procedure C/V and I/V measurements
measured at room temperature (and at -10C); parallel mode 10KHz (and at 120Hz)
CCE measurements NIKHEF setup (details in presentation of H.Hoedlmoser - last RD50 Workshop) 90Sr – source; 2.5 s shaping time; noise 567e- + 4.26e-/pF measured mainly at -22±1C
TCT measurements RD39 setup at CERN used (details given in Jaakko’s talk) 2 lasers used:
• infrared laser – simulation of mips• red laser – front illumination only
Irradiation 24 GeV/c protons at the CERN PS
Annealing 4min at 80C
Michael Moll – 10th RD50 Workshop, June 2007 -8-
RD50 leakage current after irradiation
CNM detectors: Increase of leakage current around 300V caused noise problems for CCE measurements
0 100 200 300 400 500 60010-6
1x10-5
1x10-4
10-3
HIP-004-B (4min 80C)
4.78e13 p/cm2 1.32e14 2.27e14 5.10e14 1.30e15 2.64e15 3.06e15 3.06e15
I[A]
bias voltage [V]
0 100 200 300 400 500 6001E-6
1E-5
1E-4
1E-3
CNM-11-E (4min 80C)
4.78e13 1.32e14 p/cm2
2.27e14 5.10e14 1.30e15 2.64e15 3.06e15 3.06e15
I [A
]
bias voltage [V]
Michael Moll – 10th RD50 Workshop, June 2007 -9-
RD50 Leakage current
1013 1014 101510-3
10-2
10-1
I
/Vo
l [A
cm-3]
eq
[cm-2]
CNM-11 HIP-004-B ITC-W11 CNM-22 (p-type) RD50-23-P linear fit through (0/0):
= 4.1x10-17 A cm-1
4 min 80°C
Michael Moll – 10th RD50 Workshop, June 2007 -10-
RD50 Depletion Voltage
0.0 5.0x1014 1.0x1015 1.5x1015 2.0x1015 2.5x1015
0
1x1013
2x1013
3x1013
4x1013
5x1013
gy=0.0125 cm-1
gy=0.024 cm-1
gy=0.019 cm-1
gy=0.018 cm-1
|N
eff|
[cm
-3]
eq
[cm-2]
HIP-004 n-type ITC-W11 n-type CNM-11 n-type RD50-23 n-type CNM-22 p-type
0
100
200
300
400
500
600
700
800
VD
EP [V
]
4 min 80°C
Michael Moll – 10th RD50 Workshop, June 2007 -11-
RD50 TCT measurements (red laser)
0 2 4 6 8 10 12 14 16 18 20
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24CNM-22-42 150 m EPI p-type
2.3x1014 p/cm2
4 min @ 80 OC
am
plit
ud
e [V
]
time [ns]
0 V 20 V 40 V 60 V 80 V 100 V 120 V 140 V 160 V 180 V 200 V
p-type epi silicon after 2.3x1014 p/cm2
data not corrected for trapping demonstrating that p-type has been inverted to n-type
Michael Moll – 10th RD50 Workshop, June 2007 -12-
RD50 CCE measurements
0 50 100 150 200 250 3000
2000
4000
6000
8000
10000
12000
14000CNM-11
colle
cte
d c
ha
rge
[e- ]
bias voltage [V]
reference 1 (CNM-11-49) meas. 1 reference 1 (CNM-11-49) meas. 2 reference 2 (CNM-11-35) meas. 1 reference 2 (CNM-11-35) meas. 2
= 4.8x1013 p/cm2 (CNM-11-29)
= 1.3x1014 p/cm2 (CNM-11-81)
0 50 100 150 200 250 300 350 400 4500
2000
4000
6000
8000
10000
12000
14000RD50-23-p
reference (RD50-23-p10) meas. 1 reference (RD50-23-p10) meas. 2
= 4.8x1013 p/cm2(RD50-23-p05)
= 1.3x1014 p/cm2(RD50-23-p08)
= 2.3x1014 p/cm2(RD50-23-p06)
= 5.1x1014 p/cm2(RD50-23-p03)
= 1.3x1015 p/cm2(RD50-23-p07)
colle
cte
d c
ha
rge
[e- ]
bias voltage [V]
Michael Moll – 10th RD50 Workshop, June 2007 -13-
RD50 CCE measurements
0.0 2.0x1014 4.0x1014 6.0x1014 8.0x1014
6000
8000
10000
12000
co
llect
ed
ele
ctro
ns
(fu
lly d
ep
lete
d)
eq
[cm-2]
W-11 (n-type) HIP-004 (n-type) CNM-22 (p-type) RD50-23 (n-type) CNM-11 (n-type)
Michael Moll – 10th RD50 Workshop, June 2007 -14-
RD50 TCT – Infrared laser
Sharp drop in CCE at low fluences observed also with infrared laser (RD39 TCT setup)
Michael Moll – 10th RD50 Workshop, June 2007 -15-
RD50 Depletion Voltage (CV)
0.0 5.0x1014 1.0x1015 1.5x1015 2.0x1015 2.5x1015
0
1x1013
2x1013
3x1013
4x1013
5x1013
gy=0.0125 cm-1
gy=0.024 cm-1
gy=0.019 cm-1
gy=0.018 cm-1
|Nef
f| [c
m-3
]
eq
[cm-2]
HIP-004 n-type ITC-W11 n-type CNM-11 n-type RD50-23 n-type CNM-22 p-type
0
100
200
300
400
500
600
700
800
VD
EP [V
]
4 min 80°C
Neutron irradiation
0
100
200
300
400
500
600
700
800
0.0E+00 1.0E+15 2.0E+15 3.0E+15
fluence [cm-2]
Vd
ep [
V]
HIP-004-B
CNM-11CNM-22
gc=0.83x10-13 Vcm-2
gy =0.0048 cm-1
gc=0.73x10-13 Vcm-2
gy =0.0043 cm-1
24 GeV/c protons Neutrons (Ljubljana)
preliminary data(1.6.2007)
Michael Moll – 10th RD50 Workshop, June 2007 -16-
RD50 Summary
leakage current increase as expected (same for all detectors) increase of Vdep (donor generation) depending on processing – different for
different manufacturers net space charge remains positive for n-type epi (no type inversion) net space charge becomes positive for p-type epi (inversion to n-type) unusual drop in CCE observed in low fluence range
neutron irradiated samples under investigation preliminary data presented (less pronounced increase in depletion voltage !)
24 GeV/c proton irradiated n- and p-type 150 m thick epitaxial detectors manufactured by 3 different producers have been investigated:
ongoing work:
Michael Moll – 10th RD50 Workshop, June 2007 -17-
RD50
0 100 200 300 400 500 6001E-6
1E-5
1E-4
1E-3
W11 (4 min @ 80oC) 4.78e13 1.32e14 p/cm2
2.27e14 5.10e14 1.30e15 2.64e15 3.06e15 3.06e15
I [A
]
bias voltage [V]
IV – ITC samples
Michael Moll – 10th RD50 Workshop, June 2007 -18-
RD50
0 100 200 300 400 500 6001E-6
1E-5
1E-4
1E-3
CNM-11-E (4min 80C)
4.78e13 1.32e14 p/cm2
2.27e14 5.10e14 1.30e15 2.64e15 3.06e15 3.06e15
I [A
]
bias voltage [V]
IV – CNM samples