MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 336
Amorphous Silicon Technology—1994
Symposium held April 4-8, 1994, San Francisco, California, U.S.A.
EDITORS:
Eric A. Schiff
Syracuse UniversitySyracuse, New York, U.S.A.
Michael Hack
Xerox PARC
Palo Alto, California, U.S.A.
Arun Madan
MV Systems Inc.
Golden, Colorado, U.S.A.
Martin Powell
Philips Research Laboratories
Surrey, United Kingdom
Akihisa Matsuda
Electrotechnical LaboratoryTsukuba, Japan
IMIRISI
MATERIALS RESEARCH SOCIETY
Pittsburgh, Pennsylvania
Contents
PREFACE
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
PART I: DEPOSITION STUDIES, PLASMA AND FILMS
* RELATIONSHIP BETWEEN PLASMA CHEMISTRY AND ELECTRON
TRAPPING RATE IN PLASMA-DEPOSITED SILICON NITRIDE
D.L. Smith 3
* CONTROL OF THE ELECTRON AND HOLE DRIFT MOBILITIES IN
PLASMA DEPOSITED a-Si:H
G. Ganguly and A. Matsuda 7
PROGRESS IN LARGE AREA SELECTIVE SILICON DEPOSITION FOR
TFT/LCD APPLICATIONS
J.H. Souk and G.N. Parsons 19
A LOW TEMPERATURE PLASMA-ASSISTED DEPOSITION PROCESS FOR
MICROCRYSTALLINE THIN FILM TRANSISTORS, TFTs
S.S. He and G. Lucovsky 25
EFFECTS OF INTERMITTENT DEPOSITION ON THE DEFECT DENSITY
IN a-Si:H
T. Kamei, N. Hata and A. Matsuda 31
AMORPHOUS TO POLYSILICON GROWTH AND "SUNFLOWER EFFECT"
OBSERVED IN CATALYTIC-CVD
H. Matsumura, Y. Hosoda and S. Furukawa 37
FACTORS INFLUENCING THE QUALITY OF a-Si:H FILMS DEPOSITED
BY THE 'HOT WIRE' TECHNIQUEE. C. Molenbroek, A.H. Mahan, E.J. Johnson and A.C. Gallagher 43
NANOSCALE STUDY OF THE HYDROGENATED AMORPHOUS SILICON
SURFACE
D.M. Tanenbaum, A. Laracuente and A.C. Gallagher 49
SILICON OXYCARBIDE MICROCRYSTALLINE LAYERS PRODUCED BY
SPATIAL SEPARATION TECHNIQUESR. Martins, I. Ferreira, E. Fortunato and M. Vieira 55
* Invited Paper
v
EXCIMER LASER ANNEALING OF AMORPHOUS SILICON FILMS
J. Viatella, R.K. Singh and R.P.S. Thakur
HIGH-GROWTH RATE a-Si:H DEPOSITED BY HOT-WIRE CVD
P. Brogueira, V. Chu and J.P. Conde
IN SITU ELLIPSOMETRIC MONITORING OF LOW TEMPERATURE
GROWTH OF POLY-Si FILMS BY RF PLASMA CVD
T. Shirafuji, Y. Hayashi and K. Tachibana
VHF COAXIAL HELIX PLASMA SOURCE FOR a-Si:H
U. Stephan, J. Kuske and K. Schade
IN SITU ELLIPSOMETRIC STUDY OF THE DEPENDENCE OF a-Si:H
FILM GROWTH ON SUBSTRATE PROPERTIES AND IGNITION
PROCEDURES
U.I. Schmidt, W. Herbst, B. Schroder and H. Oechsner
IMPROVEMENT OF FILM QUALITY OF a-Si:H DEPOSITED BY
PHOTO-CVD USING SiH2Cl2T. Oshima, K. Yamaguchi, A. Yamada, M. Konagai and K. Takahashi
AMORPHOUS SILICON FILMS FROM DICHLOROSILANE AND
HYDROGEN
J.N. Bullock and S. Wagner
CYCLIC CVD FOR PREPARATION OF SILICON FILMS OF
ADJUSTABLE STRUCTURE
S. Koynov, S. Grebner, T. Fischer and R. Schwarz
OPTIMIZATION OF A DUAL-MODE RF/MICROWAVE PLASMA FOR
AMORPHOUS THIN FILM DEPOSITION
R. Etemadi, O. Leroy, B. Drevillon and C. Godet
MORE INSIGHT INTO THE VHF-GLOW-DISCHARGE BY PLASMA
IMPEDANCE MEASUREMENTS
U. Kroll, Y. Ziegler, J. Meier, H. Keppner and A. Shah
CHARACTERIZATION OF AMORPHOUS SILICON DEPOSITED AT
HIGH RATE BY HELIUM DILUTION PECVD AND USED FOR
APPLICATIONS IN RADIATION DETECTION
A. Hie, T. Pochet, F. Foulon and B. Equer
vi
PART II: FUNDAMENTAL STUDIES AND DEFECTS
STRUCTURAL RELAXATION AND STRUCTURAL MEMORY AT
AMORPHOUS SILICON DANGLING BONDS
H.M. Branz and P.A. Fedders
DEFECT-RELATED PHOTOLUMINESCENCE OF a-Si:H
I. Ulber, A. Barth, W. Fuhs and H. Mell
A UNIFIED DESCRIPTION OF THE DENSITY OF STATES FOR
HYDROGEN AND ELECTRONS IN AMORPHOUS SILICON
S.C. Deane and M.J. Powell
ON MODELING TRIVALENT DANGLING BONDS WITH BIVALENT
LEVELS
V. Suntharalingam and H.M. Branz
PHYSICS OF THE MEYER-NELDEL RULE IN AMORPHOUS SILICON
H.M. Branz, A. Yelon and B. Movaghar
TOWARD A PRACTICAL MODEL OF a-Si:H DEFECTS IN INTENSITY-
TIME-TEMPERATURE SPACE
D. Caputo, J. Bullock, H. Gleskova and S. Wagner
MOLECULAR DYNAMICS STUDIES OF DIAMONDLIKE AMORPHOUS
CARBON
P.A. Fedders and D.A. Drabold
MOLECULAR DYNAMICS SIMULATION OF HYDROGENATED
AMORPHOUS SILICON WITH TERSOFF POTENTIAL
T. Ohira, T. Inamuro and T. Adachi
STUDY OF AMORPHOUS SILICON NITRIDE FILMS BY BRILLOUIN
SPECTROSCOPY
G. Carlotti, G. Socino, H. Xia, Z.F. Li, W. Zhang, X.X. Qu, K.J. Chen
and X.K. Zhang
NON-RADIATIVE RECOMBINATION IN a-Si:H
M. Schubert, R. Stachowitz, R. Saleh and W. Fuhs
MONTE CARLO MODELLING OF ELECTROPHOTOGRAPHIC DARK
DISCHARGE
S.J. Elmer, J.M. Marshall, R.A.C.M.M. van Swaaij, J. Bezemer and
A.R. Hepburn
Invited Paper
vii
EVIDENCE OF ENERGY RELAXATION OF CHARGED DEFECTS IN
AMORPHOUS SILICON VIA FORWARD BIAS CAPACITANCE
MEASUREMENTS
D. Caputo, G. de Cesare, G. Masini, F. Palma, A. Pastore and M. Tucci
EXPLORATION OF DEFECT RELAXATION DYNAMICS IN
HYDROGENATED AMORPHOUS SILICON USING TEMPERATURE
SWITCHING EXPERIMENTS
A. Gardner and J.D. Cohen
MOLECULAR DYNAMICS STUDIES OF DEFECT MOTION IN a-Si:H
P.A. Fedders
NEW APPROACHES TO MOLECULAR DYNAMICS SIMULATIONS
OF a-Si:H
Q. Li, R. Biswas and CM. Soukoulis
PART III: HYDROGEN'S ROLE AND METASTABILITY
LIGHT INDUCED DEFECTS IN a-Si:H, TEMPERATURE DEPENDENCE
OF THEIR CREATION AND ANNEAL AND THEIR EFFECT ON
PHOTOCARRIER LIFETIME
P. Stradins, H. Fritzsche and M.Q. Tran
FABRICATION OF HIGHLY STABLE a-Si:H FROM CHLORINATED
PRECURSORS
M. Azuma, T. Yokoi and I. Shimizu
COMPARISON OF DARK AND LIGHT-INDUCED ANNEALING OF
METASTABLE DEFECTS IN a-Si:H
H. Gleskova, M. Nakata and S. Wagner
THE STAEBLER-WRONSKI EFFECT AND THE THERMAL
EQUILIBRATION OF DEFECT AND CARRIER CONCENTRATIONS
R.M.A. Dawson, CM. Fortmann, Y.M. Li and C.R. Wronski
METASTABLE DEFECT KINETICS IN HYDROGEN PASSIVATED
POLYCRYSTALLINE SILICON
N.H. Nickel, R.A. Street, W.B. Jackson and N.M. Johnson
EXPLANATION OF LIGHT-ENHANCED ANNEALING OF DEFECTS IN
AMORPHOUS SILICON
D. Redfield and R. Bube
RECOVERY PROCESS FOR LIGHT-SOAKED a-Si:H
Q. Zhang, H. Takashima, J.-H. Zhou, M. Kumeda and T. Shimizu
Invited Paper
viii
NEW MODEL FOR LOCAL H-ATOM BONDING RE-ARRANGEMENTS
ASSOCIATED WITH THE STAEBLER-WRONSKI EFFECT IN a-Si:H AND
a-Si.H-BASED ALLOYS
G. Lucovsky, M.J. Williams, S.M. Cho, Z. Jing and J.L. Whitten 275
METASTABILITY UNDER HIGH-INTENSITY LIGHT OF DEVICE-
QUALITY He-DILUTED, H2-DILUTED AND STANDARD a-Si:H
FILMS DEPOSITED BETWEEN 50°C AND 350°C
P. Morin and P. Roca i Cabarrocas 281
THE ROLE OF THE BAND GAP IN THE LIGHT-INDUCED
DEGRADATION OF AMORPHOUS SILICON ALLOYS
T. Unold 287
A QUANTITATIVE MODEL FOR THE METASTABLE DEFECT
CREATION IN AMORPHOUS SEMICONDUCTORS BY keV-ELECTRON
IRRADIATION
A. Scholz, B. Schroder and H. Oechsner 293
HYDROGEN BONDING AND MICROVOID STABILITY IN a-Si:H
M.J. van den Boogaard, A.C. van der Steege, W.G.J.H.M. van Sark
and W.F. van der Weg 299
METASTABLE DEFECT STUDIES IN HYDROGEN MODULATED
MULTILAYER AMORPHOUS SILICON
D. Kwon and J.D. Cohen 305
HYDROGEN BONDING CONFIGURATIONS DETERMINED FROM H
EVOLUTION
W.B. Jackson, N.H. Nickel, N.M. Johnson, F. Pardo and P.V. Santos 311
HYDROGEN DIFFUSION IN UNDOPED AND B-DOPED a-Si^C^HR. Shinar, J. Shinar, G. Subramania, H. Jia, S. Sankaranarayanan,M. Leonard and V.L. Dalai 317
HYDROGEN DIFFUSION AND SOLUBILITY IN a-Si:H
W. Beyer and H. Wagner 323
EFFECT OF LIGHT SOAKING ON THE LOCAL MOTION OF
HYDROGEN IN HDYROGENATED AMORPHOUS SILICON
P. Hari, P.C. Taylor and R.A. Street 329
GROWTH OF AMORPHOUS SILICON MATERIALS AND DEVICES
WITH IMPROVED STABILITY
V.L. Dalai, E.X. Ping, S. Kaushal, M. Leonard, M.K. Bhan and K. Han 335
ix
PART IV: OPTOELECTRONIC PROPERTIES AND TRANSPORT STUDIES
* POLARIZED ELECTROABSORPTION AND CARRIER MOBILITIES IN
AMORPHOUS SILICON ALLOYS
Y. Tsutsumi, H. Okamoto, K. Hattori and Y. Hamakawa 343
MOVING PHOTOCARRIER GRATING TECHNIQUE FOR MOBILITY AND
LIFETIME MEASUREMENTS IN AMORPHOUS SEMICONDUCTORS
M. Hundhausen, U. Haken and L. Ley 353
TRANSPORT STUDIES BY STEADY-STATE AND TRANSIENT
PHOTOCARRIER GRATING METHODS
R. Schwarz, F. Wang and D. Schuster 359
BUILT-IN POTENTIALS VIA ELECTROABSORPTION MEASUREMENTS IN
a-Si:H p-i-n SOLAR CELLS: A CRITICAL ASSESSMENT
Q. Wang, E.A. Schiff and S.S. Hegedus 365
THE INTERPRETATION OF THE CONSTANT PHOTOCURRENT METHOD
IN TERMS OF DEEP DEFECT DENSITY OF STATES IN a-Si:H
F. Siebke and H. Stiebig 371
IMPROVED ELECTRICAL AND TRANSPORT CHARACTERISTICS OF
AMORPHOUS SILICON BY ENRICHING WITH MICROCRYSTALLINE
SILICON
A. Mireshghi, W.S. Hong, J. Drewery, T. Jing, S.N. Kaplan, H.K. Lee
and V. Perez-Mendez 377
INTERPRETATION OF HIGH FIELD TRANSPORT IN a-Si:H BASED
ON THE EFFECTIVE TEMPERATURE DEFINITION
C.E. Nebel and R.A. Street 383
THE MOBILITY LIFETIME PRODUCT OF ELECTRONS AS A FUNCTION
OF TEMPERATURE AND ELECTRON CONCENTRATIONS IN a-Si:H
S. Nishida and H. Fritzsche 389
NON-GAUSSIAN NOISE STATISTICS IN UNDOPED HYDROGENATED
AMORPHOUS SILICON
G.M. Khera and J. Kakalios 395
ANALYSIS OF THE PHYSICAL ORIGIN OF THE BLUE SHIFT OF THE
OPTICAL BANDGAP OF a-Si:H BASED MULTILAYERS
N. Bernhard and G.H. Bauer 401
MODELING OF REVERSE BIAS DIFFERENTIAL CHARGE EXPERIMENTS
IN AMORPHOUS SILICON
F.R. Shapiro 407
* Invited Paper
x
CHARGED DEFECT STATE DISTRIBUTIONS OBTAINED FROM THE
ANALYSIS OF PHOTOCONDUCTIVITIES IN INTRINSIC a-Si:H FILMS
M. Gune§, R.W. Collins and C.R. Wronski
THERMAL QUENCHING AND PHOTO-ENHANCEMENT OF \n
PRODUCTS IN a-Si:H -- THE ROLE OF DANGLING BONDS AND
BAND TAILS
E. Morgado
MOBILITY-LIFETIME PRODUCTS IN GLOW DISCHARGE AND RF
SPUTTER DEPOSITED a-Si:H
M.H. Farias, A. Roche, S.Z. Weisz, H. Jia, J. Shinar, Y. Lubianiker and
I. Balberg
THE GROWTH, STEADY STATE AND DECAY OF THE PHOTOCARRIER
POPULATION AT LOW TEMPERATURES
M.Q. Tran, P. Stradins and H. Fritzsche
THE TIME-OF-FLIGHT TECHNIQUE APPLIED TO AMORPHOUS
SILICON pin SOLAR CELLS
H. Brummack, N. Bernhard, K. Eberhardt and M.B. Schubert
SPACE-CHARGE-ENHANCED POST-TRANSIT-CURRENTS IN a-Si:H
F. Schauer, A. Eliat, M. Neslidek, G.J. Adriaenssens and L.M. Stals
THERMALLY STIMULATED CONDUCTIVITY IN a-Si:H AT LOW
TEMPERATURES
M. Zhu, M.B. von der Linden and W.F. van der Weg
CHARGE AND CURRENT TRANSIENT MEASUREMENTS ON n-TYPE
HYDROGENATED AMORPHOUS SILICON IN THE RELAXATION
REGIME
U.W. Paschen, D. Kwon and J.D. Cohen
SWITCHING EFFECTS, CURRENT FLUCTUATIONS AND LATERAL
PHOTOVOLTAGE - THE ELECTRICAL APPEARANCE OF a-Si:H/METAL
MULTILAYERS
A.N. Panckow, T.P. Driisedau and U. Schmidt
PART V: MODIFIED BAND-GAP MATERIALS AND DOPING STUDIES
EFFECT OF ION DOPING TEMPERATURE ON ELECTRICAL PROPERTIES
OF APCVD a-Si
K.H. Lee, B.Y. Moon, Y.C. Chung, S.M. Lee, S.C. Kim, D. Kim and J. Jang
IN-SITU CRYSTALLIZATION AND DOPING OF a-Si FILM BY MEANS OF
SPIN-ON-GLASS
T. Sakoda, C.-D. Kim and M. Matsumura
xi
SILICON CARBON ALLOYS PRODUCED BY VHF AND CONVENTIONAL
PECVD. A COMPARISON OF THEIR PROPERTIES
G. Crovini, F. Demichelis, C.F. Pirri, E. Tresso, J. Meier, S. Dubail
and A. Shah 481
HYDROGENATED AMORPHOUS SILICON GERMANIUM ALLOY FOR
STABLE SOLAR CELLS
A. Terakawa, M. Shima, K. Sayama, H. Tarui, H. Nishiwaki and S. Tsuda 487
THE ELECTRONIC STRUCTURE OF a-Si,Ge:H ALLOYS
F. Zhong, J.D. Cohen, J. Yang and S. Guha 493
THE MECHANISM OF THE PLASMA INDUCED DEPOSITION of a-Ge
AND /xc-Ge FROM GERMANE: THE LIMITS AND POSSIBLE
ALTERNATIVES
F. Glatz, R. Konwitschny, M.G.J. Vepfek-Heijman and S. Vepfek 499
VERY HIGH-GAP TETRAHEDRALLY COORDINATED AMORPHOUS
SILICON-CARBON ALLOYS
I. Solomon and L.R. Tessler 505
STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF
<p>^ic-Si:H VERY THIN FILMS DEPOSITED BY THE VHF-GD
TECHNIQUE
R. Fluckiger, J. Meier, A. Shah, A. Catana, M. Brunei, H.V. Nguyen,
R.W. Collins and R. Carius 511
DEFECT DISTRIBUTION AND BONDING STRUCTURE IN HIGH BAND
GAP a-Si^C^H FILMS DEPOSITED IN H2 DILUTION
R. Galloni, R. Rizzoli, C. Summonte, F. Demichelis, F. Giorgis,C.F. Pirri, E. Tresso, G. Ambrosone, C. Catalanotti, U. Coscia, P. Rava,
G. Delia Mea, V. Rigato, A. Madan and F. Zignani 517
HOLE DRIFT MOBILITY IN a-Si^C^HQ. Gu, Q. Wang, E.A. Schiff, Y.-M. Li and C.T. Malone 523
MINORITY CARRIER DIFFUSION LENGTHS AND PHOTOCONDUCTIVITY
IN a-Si,N:H DEPOSITED BY REMOTE PECVD
M.J. Williams, S.M. Cho, S.S. He and G. Lucovsky 529
THERMAL MODULATED ESR FOR THE STUDY OF DEFECTS IN a-SiC:H
FILMS
F. Demichelis, F. Giorgis, C.F. Pirri, E. Tresso, L. Ravera and V. Rigato 535
THERMAL CVD OF AMORPHOUS GERMANIUM FILMS FROM
2,5-Bis(Tert.-Butyl)-2,5-Diaza-l-Germa-Cyclopentane ORGANOMETALLICPRECURSOR
F. Glatz, J. Prokop, S. Vepfek, F.R. Klingan and W.A. Herrmann 541
xii
A BASIC STUDY OF THE GeH4 + H2 RF DISCHARGE
P. Wickboldt, D. Pang and W. Paul 547
ELECTRONIC AND OPTICAL PROPERTIES OF a-Si^C^H FILMS
PRODUCED FROM ADMIXTURES OF SILANE AND
DITERTIARYBUTYLSILANE
K. Gaughan, J.M. Viner and P.C. Taylor 553
ELECTRONIC AND OPTICAL PROPERTIES OF a-Si:H FILMS ALLOYED
WITH SULFUR
S.L. Wang, Z.H. Lin, J.M. Viner and P.C. Taylor 559
INFLUENCE OF SUBSTRATE TEMPERATURE ON THE PROPERTIES OF
a-Si:H p-LAYERS OBTAINED FROM TRIMETHYLBORON
J. Puigdollers, J.M. Asensi, J. Bertomeu, J. Andreu and J.C. Delgado 565
BORON AND PHOSPHORUS ION IMPLANTATION IN a-S^C^H THIN
FILMS
R. Rizzoli, R. Galloni, C. Summonte, F. Demichelis, C.F. Pirri, E. Tresso,
G. Crovini, P. Rava and F. Zignani 571
AMORPHOUS SiUxBx ALLOYS: ATOMIC FINE STRUCTURE AND OPTICAL
PROPERTIES
J.R.A. Carlsson, C. Bandmann, S. Csillag, X.-H. Li and M. Johansson 577
AMBIPOLAR DIFFUSION LENGTHS, Lamb, AND STEADY-STATE
PHOTOCONDUCTIVITY, cr h,IN B2H6 DOPED Mc-Si
S.M. Cho, S.S. He and G. Lucovsky 583
BORON DOPED a-Si,C:H GROWN BY REACTIVE MAGNETRON
SPUTTERING FROM DOPED TARGETS
Y.H. Liang, S.-Y. Yang, A. Nuruddin and J.R. Abelson 589
PROCESS-PROPERTY RELATIONSHIPS FOR a-Si^C^H DEPOSITION:
EXCURSIONS IN PARAMETER SPACE GUIDED BY REAL TIME
SPECTROELLIPSOMETRY
Y. Lu, S. Kim, M. Gunes, Y. Lee, C.R. Wronski and R.W. Collins 595
GROWTH OF GERMANIUM CARBON ALLOY BY PECVD USING SILANE
AS A GROWTH PROMOTER
P.R. Moffitt, H.A. Naseem, S.S. Ang and W.D. Brown 601
EXCITATION FREQUENCY-DEPENDENT RAMAN SCATTERING IN
a-SiC:H ALLOYS
G. Morell, R.S. Katiyar, S.Z. Weisz and I. Balberg 607
EFFICIENT VISIBLE ROOM TEMPERATURE PHOTOLUMINESCENCE IN
WIDE GAP HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS
L.R. Tessler and I. Solomon 613
xiii
PHOTOBLEACHING OF PL AND TEMPERATURE DEPENDENCE OF ESR
IN NITROGEN-RICH AMORPHOUS SILICON NITRIDE FILMS
D. Chen, J.M. Viner, P.C. Taylor and J.Z. Kanicki
DIFFUSION LENGTHS IN a-Si:H/a-SiC:H AND a-Si:H/a-SiGe:H
MULTILAYERS DETERMINED BY THE GRATING METHOD
N. Bernhard and G.H. Bauer
1/f NOISE MEASUREMENTS OF HYDROGENATED AMORPHOUS
SILICON-CARBON ALLOYS
H.M. Dyalsingh, G.M. Khera, J. Kakalios, C.C. Tsai and R.A. Street
NITROGEN: NOT A DOPANT IN CRYSTALLINE Si (c-Si), BUT AN
n-TYPE DOPANT IN a-Si:H, WHY?G. Lucovsky, M.J. Williams, S.S. He, S.M. Cho, Z. Jing and J.L. Whitten
PART VI: SOLAR CELLS
AMORPHOUS SILICON ALLOY PHOTOVOLTAIC TECHNOLOGY-FROM
R&D TO PRODUCTION
S. Guha, J. Yang, A. Banerjee, T. Glatfelter, K. Hoffman, S.R. Ovshinsky,M. Izu, H.C. Ovshinsky and X. Deng
CHARACTERIZATION AND OPTIMIZATION OF THE TCO/a-Si:H(,B)INTERFACE FOR SOLAR CELLS BY IN-SITU ELLIPSOMETRY AND
SIMS/XPS DEPTH PROFILING
H.N. Wanka, E. Lotter and M.B. Schubert
AN EXPLORATORY SURVEY OF p-LAYERS FOR a-Si:H SOLAR CELLS
Y.-M. Li, F. Jackson, L. Yang, B.F. Fieselmann and L. Russell
THE EFFECT OF H2 DILUTION ON THE STABILITY OF a-Si:H BASED
SOLAR CELLS
L. Yang and L.-F. Chen
SATURATION BEHAVIOR AND THERMAL ANNEALING RECOVERY OF
LIGHT-INDUCED DEGRADATION IN a-SiGe:H ALLOY SOLAR CELLS
S. Guha, X. Xu and J. Yang
IDENTIFICATION AND REDUCTION OF p-i INTERFACE INSTABILITY
AND ESTABLISHMENT OF 8.5% STABILIZED EFFICIENCY FOR SINGLE
JUNCTION a-Si SOLAR CELLS
J. Xi, T. Liu, V. Iafelice, K. Si and F. Kampas
Invited Paper
xiv
STABILITY STUDIES OF HYDROGENATED AMORPHOUS SILICON
ALLOY SOLAR CELLS PREPARED WITH HYDROGEN DILUTION
J. Yang, X. Xu and S. Guha 687
ADJUSTING THE DEFECT PROFILE IN a-Si:H SOLAR CELLS WITH
ENERGY RESOLVED ELECTRON OR LASER BEAMS: EXPERIMENT
AND MODELING
K. Vasanth, D. Caputo, S. Wagner, M. Bennett, S. Bae and S. Fonash 693
STABILITY TEST OF 4 FT2 TRIPLE-JUNCTION a-Si ALLOY PV
PRODUCTION MODULES
X. Deng, M. Izu, K.L. Narasimhan and S.R. Ovshinsky 699
ACCURATE LIGHT ABSORPTION PROFILE IN TANDEM a-Si:H SOLAR
CELLS ON TEXTURED TCO SUBSTRATES
G. Tao, Zs. Makaro, M. Zeman and J.W. Metselaar 705
MODELLING HETEROFACE p.i.n SOLAR CELLS FOR IMPROVING
STABILITY
A. Fantoni, M. Vieira and R. Martins 711
NON-LOCAL RECOMBINATION IN "TUNNEL JUNCTIONS" OF
MULTIFUNCTION AMORPHOUS Si ALLOY SOLAR CELLS
J. Hou, J. Xi, F. Kampas, S. Bae and S.J. Fonash 717
A STUDY OF a-Si:H/a-SiGe:H TANDEM SOLAR CELLS AND MODULES
Y.-M. Li, L. Yang, M.S. Bennett, L. Chen, F. Jackson, K. Rajan and
R.R. Arya 723
INVESTIGATION OF SHUNT RESISTANCES IN SINGLE-JUNCTION a-Si:H
ALLOY SOLAR CELLS
K.R. Lord II, M.R. Walters and J.R. Woodyard 729
EFFECTS OF TCO/a-Si:C:H INTERFACE DEFECT STATES ON p-i-n a-Si:H
SOLAR CELL PERFORMANCE
F. Smole and M. Topic 735
AD-LAYER FOR SPATIAL CONTROL OF LIGHT INDUCED
DEGRADATION ON pin DEVICES
M. Vieira, A. Fantoni, E. Fortunato, G. Lavareda and R. Martins 741
PART VII: THIN FILM TRANSISTORS
* a-Si TFT TECHNOLOGIES FOR AM-LCDS
N. Ibaraki 749
* Invited Paper
xv
UNDERSTANDING OF THIN FILM TRANSISTOR ELECTRICAL
MEASUREMENTS IN THE LIGHT OF THE DEFECT POOL MODEL
S.C. Deane and M.J. Powell
SILICON NITRIDE OPTIMISATION FOR a-Si.H TFTs USED IN
PROJECTION LC-TVs
I.D. French, C.J. Curling and A.L.Goodyear
EFFECTS OF N2 PLASMA TREATMENT ON Si02 GATE INSULATOR
IN a-Si:H THIN FILM TRANSISTOR
S.C. Kim, S.S. Bae, E.Y. Oh, J.H. Kim, J.W. Lee, C.Y. Kim and
D. Kim
CONSIDERATIONS FOR LARGE AREA FABRICATION OF INTEGRATED
a-Si AND POLY-Si TFTs
P. Mei, G.B. Anderson, J.B. Boyce, D.K. Fork, M. Hack, R.I. Johnson,R.A. Lujan and S.E. Ready
HIGH PERFORMANCE a-Si:H THIN FILM TRANSISTORS, TFTs: THE
IMPORTANCE OF NITRIDE DIELECTRICS WITH NO DETECTABLE
Si-Si BONDING
S.S. He and G. Lucovsky
EFFECTS OF TOP INSULATOR OVERLAP ON THE STABILITY IN
HYDROGENATED AMORPHOUS SILICON THIN FILM TRANSISTORS
H.S. Choi, Y.S. Kim, S.K. Lee, J.K. Yoon, W.S. Park and M.K. Han
STABILITY OF a-Si:H TFTs EMPLOYING APCVD SK>, WITH N2PLASMA TREATMENT AS A GATE DIELECTRIC
M.C. Jun, Y.S. Kim, E.Y. Oh, D.G. Kim and M.K. Han
A NEW METHOD FOR THE DERIVATION OF THE OUTPUT
CHARACTERISTICS OF AMORPHOUS SILICON THIN-FILM
TRANSISTORS
A. Mittiga, L. Mariucci, R. Carluccio, A. Pecora and G. Fortunato
THE KINETICS OF REMOVAL OF DEFECTS IN a-Si:H TFTs MADE
WITH PECVD OXIDE GATE INSULATOR MATERIAL
P.N. Morgan, W.I. Milne, S.C. Deane and M.J. Powell
DEPENDENCE OF FIELD-EFFECT MOBILITY ON DEPOSITION
CONDITIONS IN a-Si:H TFT
Y. Chida, M. Kondo, G. Ganguly and A. Matsuda
DENSITY OF DEEP BANDGAP STATES IN AMORPHOUS SILICON
FROM THE TEMPERATURE DEPENDENCE OF THIN FILM
TRANSISTOR CURRENT
T. Globus, H.C. Slade, M. Shur and M. Hack
Invited Paper
xvi
DETERMINATION OF THE DEFECT REDISTRIBUTION AND CHARGE
INJECTION CONTRIBUTIONS TO THE a-Si:H THIN-FILM TRANSISTOR
INSTABILITY
R. Carluccio, A. Pecora, D. Massimiani and G. Fortunato
THE ORIGIN AND NATURE OF CONTACT RESISTANCE IN a-Si:H TFTs
S.M. Gadelrab and S.G. Chamberlain
PART VIII: IMAGE SENSORS AND NOVEL DEVICES
A NOVEL a-Si(C):H COLOR SENSOR ARRAY
Q. Zhu, H. Stiebig, P. Rieve, H. Fischer and M. Bohm
IMPROVEMENT OF BRIGHTNESS AND THRESHOLD-CURRENT IN
VISIBLE-LIGHT a-SiC:H THIN FILM LED BY USING METAL SHEET
SUBSTRATE
W. Boonkosum, D. Kruangam, S. Panyakeow and B. DeLong
A LARGE AREA, HIGH-RESOLUTION a-Si:H ARRAY FOR X-RAY IMAGING
L.E. Antonuk, Y. El-Mohri, W. Huang, J. Siewerdsen, J. Yorkston and
R.A. Street
THE POWER LAW DEPENDENCE OF ELECTROLUMINESCENCE
INTENSITY ON FORWARD CURRENT IN a-Si:H p-i-n DEVICESK. Wang, D. Han and M. Silver
TECHNOLOGY AND PERFORMANCE OF TFA (THIN FILM ON ASIC)-SENSORS
H. Fischer, J. Schulte, P. Rieve and M. Bohm
COLOR DOCUMENT IMAGING WITH AMORPHOUS SILICON SENSOR
ARRAYS
R.A. Street, X.D. Wu, R. Weisfield, S. Nelson and P. Nylen
"THICK" a-Si:H p-i-n DIODES, PRODUCED BY THE VHF-GD PROCESS:
SPECTRAL RESPONSE FOR VISIBLE/INFRARED LIGHT AND CURRENT
TRANSIENTS
P. Chabloz, H. Keppner, D. Fischer, N. Wyrsch and A. Shah
a-Si:H/a-SiC:H HETEROSTRUCTURE FOR BIAS-CONTROLLED
PHOTODETECTORS
G. de Cesare, F. Irrera, F. Lemmi, F. Palma and M. Tucci
AUTHOR INDEX
SUBJECT INDEX
xvii