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#InnovationAccelerated3-D NAND and UFS
Optimized Mobile Storage
Carla Christensen
Senior Product Marketing Manager
Mobile Business Unit
© 2016 Micron Technology, Inc. |
| September 26, 2016
The Future of Mobile
2 September 26, 2016 | #InnovationAccelerated
Virtual Reality /
Augmented Reality
5G
Faster, More
Connected NetworksNext-Generation
Smartphone
???
© 2016 Micron Technology, Inc. |
Overview
Mobile consumes a huge amount of Memory & Flash
UFS and the Mobile Ecosystem
3D NAND in Mobile
3 September 26, 2016 | #InnovationAccelerated
© 2016 Micron Technology, Inc. |
Mobile Market Flash Outlook
4 September 26, 2016 | #InnovationAccelerated
4968
97
13332
48
70
97
6
8
11
15
2015 2016 2017 2018
Tablet
Smartphone
All-other
NAND Bit Demand
>45% of Total
Bytes
are
Mobile
Source: MBU Strategic Marketing
Billion of GB Equivalent
Mix of Mobile Memory interface (%)
0%
20%
40%
60%
80%
100%
2015 2016 2017 2018
Other
UFS
eMMC
By Unit Shipment
© 2016 Micron Technology, Inc. |5 September 26, 2016 | #InnovationAccelerated
Mobile Breakdown by Segment
Flagship
High/Mid End
Low End
‘Feature’ differentiation 64bit Processing; 4-6GB LP4/4x Dual Lens Cameras VR Headset Compatibility 32-128GB UFS v2.1 G3x1L/2L
‘Cost’ differentiation Reduced features and hardware spec ~3 months time to market 1-2GB LP2/3 + 8/16GB eMMC (MCP)
‘Specification’ differentiation 32bit Processing; 3-4GB LP3/4x MCP and Discrete/PoP Mix 16-64GB eMMC v5.1/UFS v2.1 G3x1L
*Un-subsidized Retail Price. Low-end models usually sold at a higher discount.
UFS Market
Adoption
‘15-’165+
Chipsets
20173+
Chipsets
2018?
$500+
~$300
<$250
© 2016 Micron Technology, Inc. |6 September 26, 2016 | #InnovationAccelerated
Next-Gen Mobile Performance Scaling
0
400
800
1200
1600
2000
2400
2012 2013 2014 2015 2016 2018?
eMMC UFS
UFS 2.1 HS-G3, 2-Lane
UFS 2.0 HS-G3, 1-Lane
UFS 3.0 HS-G4, 2-Lane
eMMCv5.1
eMMCv5.0
eMMCv4.51eMMC
v4.41
Interface
Bandwidth
[MB/s]
Future Performance Scaling
• UFS Interface allows for
Bandwidth Growth needed
for Next-Gen Mobile
• Serial high-speed interface
is scalable for faster speeds
& Multi-Lane Support
• Full-duplexing for
simultaneous Read/Write
mixed-mode operation
• Mobile Storage Interface no
longer a bottleneck!
© 2016 Micron Technology, Inc. |7 September 26, 2016 | #InnovationAccelerated
Optimal Performance Requires a System-Level Approach
UFS Device
UFS µC
Error Correction
Firmware(NAND Management)
µProcessor
H
O
S
T
I/F
N
A
N
D
I/F
Data
I/O
3D
NAND
NAND MediaPerformance scales with
# of die (to Max I/O
bandwidth)
Typically 8 die Max due
to packaging and cost
limitations
3D NAND offers
numerous advantages:
• Faster R/W
performance
• Density Scaling
• Higher power
efficiency and lower
sleep power
• Increased Reliability
NAND I/OPerformance scales with # of
channels and interface speed
• Bandwidth increasing
533MT/s 667MT/s 800MT/s
UFS ControllerBlocks scaled to deliver
desired performance within
cost and power budget
UFS FirmwareIncreased efficiency to
deliver consistently
high performance
Host I/OPerformance scales
by speed selection
and up to 2 Lanes
© 2016 Micron Technology, Inc. |
| September 26, 2016
3D NAND Scaling Advantages
Density Scaling
– Higher Densities in Mobile
packages
– Lower cost per Byte
Increased Reliability
– Larger Cell Size stores more
electrons per state
Faster Performance
Improved Endurance
Superior Data Retention
8 September 26, 2016 | #InnovationAccelerated
34nm
25nm
20nm 16nm 1Znm
32-tier TLC3D
3D Gen 2
Die Density
Generation
50nm
2D Max Die Density
Limited to 128Gb
for 11.5x13mm
Mobile Package
3D allows further
density scaling for
11.5x13mm Mobile
Package
© 2016 Micron Technology, Inc. |
Mid- / Low-End
• Standalone Application Processor
• MCP – Managed NAND + LPDDR
• Up to 128GB UFS + 6GB LP possible
Flagship / High-End
• PoP Configuration (App. Processor + LPDDR)
• Standalone UFS – typically up to 8-die stack
• 128GB growing to 256GB and up
9 September 26, 2016 | #InnovationAccelerated
µC
NAND
AP
LPDRAM
Board
AP NANDLPDRAMµC
NAND
LPDRAMLPDRAM
Board
Mobile Packaging and 3D NANDHigher densities made possible using 3D NAND
© 2016 Micron Technology, Inc. |10 September 26, 2016 | #InnovationAccelerated
Micron Mobile UFS 3D NAND MemoryBreakthrough storage performance, power and reliability
High Performance~30% faster sequential writes
vs. 2D NAND; UFS 2.1 interface
delivers 33% higher bandwidth
vs. e.MMC 5.1
Enhanced ReliabilityUnique floating gate technology
provides superior data retention
compared to charge trap gates
High CapacityHigher storage capacity in a
smaller space with 3D NAND’s
vertically tiered die
Power EfficiencySignificantly reduce power
with 3D NAND’s efficient
sleep mode feature
Superior Mobile
ExperienceFaster boot up, seamless HD
streaming, high bandwidth
gaming, and responsive camera
performance
© 2015 Micron Technology, Inc.
#InnovationAccelerated