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Zener diode Zener diode schematic symbol Current-voltage characteristic of a Zener diode with a breakdown voltage of 17 volt. Notice the change of voltage scale between the forward biased (positive) direction and the reverse biased (negative) direction. From Wikipedia, the free encyclopedia A Zener diode is a type of diode that permits current not only in the forward direction like a normal diode, but also in the reverse direction if the voltage is larger than the breakdown voltage known as "Zener knee voltage" or "Zener voltage". The device was named after Clarence Zener, who discovered this electrical property. A conventional solid-state diode will not allow significant current if it is reverse-biased below its reverse breakdown voltage. When the reverse bias breakdown voltage is exceeded, a conventional diode is subject to high current due to avalanche breakdown. Unless this current is limited by external circuitry, the diode will be permanently damaged. In case of large forward bias (current in the direction of the arrow), the diode exhibits a voltage drop due to its junction built- in voltage and internal resistance. The amount of the voltage drop depends on the semiconductor material and the doping concentrations. A Zener diode exhibits almost the same properties, except the device is specially designed so as to have a greatly reduced breakdown voltage, the so-called Zener voltage . A Zener diode contains a heavily doped p-n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material. In the atomic scale, this tunneling corresponds to the transport of valence band electrons into the empty conduction band states; as a result of the reduced barrier between these bands and high electric fields that are induced due to the relatively high levels of dopings on both sides. [1] A reverse- biased Zener diode will exhibit a controlled breakdown and allow the current to keep the voltage across the Zener diode at the Zener voltage. For example, a diode with a Zener breakdown voltage of 3.2 V will exhibit a voltage drop of 3.2 V if reverse bias voltage applied across it is more than its Zener voltage. However, the current is not unlimited, so the Zener diode is typically used to generate a reference voltage for an amplifier stage, or as a voltage stabilizer for low-current applications. The breakdown voltage can be controlled quite accurately in the doping process. While tolerances within 0.05% are available, the most widely used tolerances are 5% and 10%. Breakdown voltage for commonly available zener diodes can vary widely from 1.2 volts to 200 volts. Another mechanism that produces a similar effect is the avalanche effect as in the avalanche diode. The two types of diode are in fact constructed the same way and both effects are present in diodes of this type. In silicon diodes up to about 5.6 volts, the Zener effect is the predominant effect and shows a marked negative temperature coefficient. Above 5.6 volts, the avalanche effect becomes predominant and exhibits a positive temperature coefficient. [1] In a 5.6 V diode, the two effects occur together and their temperature 12/10/2009 Zener diode - Wikipedia, the free encyc… http://en.wikipedia.org/wiki/Zener_diode 1/4

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Page 1: zener diode - wikipedia, the free encyclopedia

Zener diode

Zener diode schematic symbol

Current-voltage characteristic of a Zenerdiode with a breakdown voltage of 17 volt.Notice the change of voltage scale betweenthe forward biased (positive) direction and

the reverse biased (negative) direction.

From Wikipedia, the free encyclopedia

A Zener diode is a type of diode that permits current not only in theforward direction like a normal diode, but also in the reversedirection if the voltage is larger than the breakdown voltage knownas "Zener knee voltage" or "Zener voltage". The device was namedafter Clarence Zener, who discovered this electrical property.

A conventional solid-state diode will not allow significant current if itis reverse-biased below its reverse breakdown voltage. When thereverse bias breakdown voltage is exceeded, a conventional diode issubject to high current due to avalanche breakdown. Unless thiscurrent is limited by external circuitry, the diode will be permanentlydamaged. In case of large forward bias (current in the direction ofthe arrow), the diode exhibits a voltage drop due to its junction built-in voltage and internal resistance. The amount of the voltage dropdepends on the semiconductor material and the dopingconcentrations.

A Zener diode exhibits almost the same properties, except thedevice is specially designed so as to have a greatly reducedbreakdown voltage, the so-called Zener voltage. A Zener diodecontains a heavily doped p-n junction allowing electrons to tunnelfrom the valence band of the p-type material to the conduction bandof the n-type material. In the atomic scale, this tunneling correspondsto the transport of valence band electrons into the empty conductionband states; as a result of the reduced barrier between these bandsand high electric fields that are induced due to the relatively high levels of dopings on both sides.[1] A reverse-biased Zener diode will exhibit a controlled breakdown and allow the current to keep the voltage across the Zenerdiode at the Zener voltage. For example, a diode with a Zener breakdown voltage of 3.2 V will exhibit a voltagedrop of 3.2 V if reverse bias voltage applied across it is more than its Zener voltage. However, the current is notunlimited, so the Zener diode is typically used to generate a reference voltage for an amplifier stage, or as a voltagestabilizer for low-current applications.

The breakdown voltage can be controlled quite accurately in the doping process. While tolerances within 0.05%are available, the most widely used tolerances are 5% and 10%. Breakdown voltage for commonly available zenerdiodes can vary widely from 1.2 volts to 200 volts.

Another mechanism that produces a similar effect is the avalanche effect as in the avalanche diode. The two types ofdiode are in fact constructed the same way and both effects are present in diodes of this type. In silicon diodes upto about 5.6 volts, the Zener effect is the predominant effect and shows a marked negative temperature coefficient.Above 5.6 volts, the avalanche effect becomes predominant and exhibits a positive temperature coefficient.[1]

In a 5.6 V diode, the two effects occur together and their temperature

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TC depending on zener voltage

Zener diodeshown with

typicalpackages.

Reverse current

− iZ is shown.

In a 5.6 V diode, the two effects occur together and their temperaturecoefficients neatly cancel each other out, thus the 5.6 V diode is the componentof choice in temperature-critical applications.

Modern manufacturing techniques have produced devices with voltages lowerthan 5.6 V with negligible temperature coefficients, but as higher voltage devicesare encountered, the temperature coefficient rises dramatically. A 75 V diodehas 10 times the coefficient of a 12 V diode.

All such diodes, regardless of breakdown voltage, are usually marketed underthe umbrella term of "Zener diode".

Contents1 Uses2 See also3 External Links4 References

UsesZener diodes are widely used as voltage references and as shunt regulators to regulate thevoltage across small circuits. When connected in parallel with a variable voltage source sothat it is reverse biased, a Zener diode conducts when the voltage reaches the diode's reversebreakdown voltage. From that point on, the relatively low impedance of the diode keeps thevoltage across the diode at that value.

In this circuit, a typical voltage reference or regulator, an input voltage, UIN, is regulateddown to a stable output voltage UOUT. The intrinsic voltage drop of diode D is stable over a wide current rangeand holds UOUT relatively constant even though the input voltage may fluctuate over a fairly wide range. Because ofthe low impedance of the diode when operated like this, Resistor R is used to limit current through the circuit.

In the case of this simple reference, the current flowing in the diode is determined using Ohms law and the knownvoltage drop across the resistor R. IDiode = (UIN - UOUT) / RΩ

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The value of R must satisfy two conditions:

1. R must be small enough that the current through D keeps D in reverse breakdown. The value of this current isgiven in the data sheet for D. For example, the common BZX79C5V6[2] device, a 5.6 V 0.5 W Zenerdiode, has a recommended reverse current of 5 mA. If insufficient current exists through D, then UOUT willbe unregulated, and less than the nominal breakdown voltage (this differs to voltage regulator tubes where theoutput voltage will be higher than nominal and could rise as high as UIN). When calculating R, allowance mustbe made for any current through the external load, not shown in this diagram, connected across UOUT.

2. R must be large enough that the current through D does not destroy the device. If the current through D is ID,

its breakdown voltage VB and its maximum power dissipation PMAX, then IDVB < PMAX.

A load may be placed across the diode in this reference circuit, and as long as the zener stays in reversebreakdown, the diode will provide a stable voltage source to the load.

A Zener diode used in this way is known as a shunt voltage regulator (shunt, in this context, meaning connectedin parallel, and voltage regulator being a class of circuit that produces a stable voltage across any load). In asense, a portion of the current through the resistor is shunted through the Zener diode, and the rest is through theload. Thus the voltage that the load sees is controlled by causing some fraction of the current from the power sourceto bypass it—hence the name, by analogy with locomotive switching points.

Shunt regulators are simple, but the requirements that the ballast resistor be small enough to avoid excessive voltagedrop during worst-case operation (low input voltage concurrent with high load current) tends to leave a lot ofcurrent flowing in the diode much of the time, making for a fairly wasteful regulator with high quiescent powerdissipation, only suitable for smaller loads.

Zener diodes in this configuration are often used as stable references for more advanced voltage regulator circuits.

These devices are also encountered, typically in series with a base-emitter junction, in transistor stages whereselective choice of a device centered around the avalanche/Zener point can be used to introduce compensatingtemperature co-efficient balancing of the transistor PN junction. An example of this kind of use would be a DCerror amplifier used in a stabilized power supply circuit feedback loop system.

Zener diodes are also used in surge protectors to limit transient voltage spikes.

See alsoWikibooks:Zener diodesAvalanche diodeVoltage stabilizerVoltage regulator tubeTransient voltage suppression diodeBackward diode

External LinksHow to use a Zener diode (http://knol.google.com/k/max-iskram/electronic-circuits-design-for/1f4zs8p9zgq0e/11)

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This page was last modified on 6 December 2009 at 08:22.Text is available under the Creative Commons Attribution-ShareAlike License; additional terms may apply.See Terms of Use for details.Wikipedia® is a registered trademark of the Wikimedia Foundation, Inc., a non-profit organization.Contact us

References

1. ^ a b Richard C. Dorf (ed.) The Electrical Engineering Handbook , CRC Press, Boca Raton, 1993, ISBN 0-8493-0185-8 pg.457

2. ^ BZX79C5V6 data sheet, Fairchild Semiconductor (http://www.fairchildsemi.com/pf/BZ/BZX79C5V6.html)

Retrieved from "http://en.wikipedia.org/wiki/Zener_diode"Categories: Diodes

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