Wide Bandgap Reliability and Application Guidelines · 2020. 7. 10. · Wide Bandgap Reliability and Application Guidelines NEPP-Supported GRC Activities Kristen Boomer, NASA GRC

National Aeronautics and Space Administration

www.nasa.gov

Wide Bandgap Reliability and Application

Guidelines

NEPP-Supported GRC Activities

Kristen Boomer, NASA GRC

Ahmad Hammoud, HX5/NASA GRC

NASA NEPP Electronic Technology Workshop, Greenbelt, MD

June 15-18, 2020

1To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020


www.nasa.gov

Acronyms

2

Acronym Definition

AEC Automotive Electronics Council

BOK Body of Knowledge

COTS Commercial Off the Shelf

EEEElectrical, Electronic, and

Electromechanical

ETW Electronics Technology Workshop

FET Field Effect Transistor

GaN Gallium Nitride

GRC Glenn Research Center

GSFC Goddard Space Flight Center

HTGB High Temperature Gate Bias

HTRB High Temperature Reverse Bias

JPL Jet Propulsion Laboratory

JSC Johnson Space Center

LaRC Langley Research Center

LBNLLawrence Berkeley National

Laboratory

Acronym Definition

MOSFETMetal-Oxide-Semiconductor Field

Effect Transistor

MSFC Marshall Space Flight Center

NASANational Aeronautics and Space

Administration

NEPPNASA Electronic Parts and

Packaging

PWM Pulse Width Modulation

QML Qualified Manufacturer List

SEE Single Event Effect

SEP Solar Electric Propulsion

Si Silicon

SiC Silicon Carbide

TAMU Texas A&M University

TID Total Ionizing Dose

ULA United Launch Alliance

WBG Wide Bandgap

To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020


www.nasa.gov

Power switching devices are a key component in

power electronics and are subjected to many

stresses in their normal operation within systems

Examples of reliability tests

High Temperature Reverse Bias (HTRB)

High Temperature Gate Bias (HTGB)

Thermal cycling

Extreme temperature

Radiation


Why Perform Reliability Tests?


www.nasa.gov

SiC and GaN are the Wide Bandgap (WBG) power

devices of most interest to NASA

Benefits include:

Higher breakdown voltage

Higher operating temperature

Higher frequency operation

Increased efficiency

Better size, weight, and power numbers

NASA applications/missions include Solar Electric

Propulsion (SEP), hybrid/electric aircraft propulsion,

communications

There are still challenges to be overcome before

WBG power devices are widely adopted


WBG Applicability in NASA Missions


www.nasa.gov

NASA Wide Bandgap (WBG) Working Group

Collaboration on pre- and post-irradiation of GaN & SiC devices

Publication of Body-of-knowledge (BOK) on WBG power devices

Completed BOK on SiC (in collaboration with GSFC)

Generating BOK on GaN (in collaboration with JPL)

Performance and reliability assessment of supporting electronics

for WBG power devices

Evaluation of COTS and automotive-grade EEE Parts under

extreme temperatures and thermal cycling

NEPP website report publishing


NEPP-Supported GRC Activities


www.nasa.gov

Provide a brief guidance to GaN technology and

create a “snapshot” of the current status

Technology overview

NASA applications

Ongoing work (government, industry, academia)

Challenges and limitations

Reliability

Future direction


BOK on GaN Power Devices


www.nasa.gov

Collaboration with GSFC and JPL

Characterization of pre- & post-irradiated power devices

Extreme temperature exposure and wide-range thermal cycling

High temperature reverse bias (HTRB) & high temperature gate

bias (HTGB) tests of control & irradiated parts

Determination of degradation & annealing


Collaborative Performance Assessment

of WBG Power Devices


www.nasa.gov 8

Two environmental chambers (0.37 ft3; 2.2 ft3)

Extreme temperature exposure, thermal cycling, and life-testing

Programmable temperature rate, dwell time, and number of cycles

Temperature range: -194 ºC to +315 ºC; rate: 0.1 ºC/min to 36 ºC/min

Built-in feed-throughs for multi-stress (electrical/thermal) testing

Material, device, and circuit characterization


GRC Extreme Temperature Electronics Lab


www.nasa.gov 9

EPC 2012

GaN GS61008P

GaN GS66508P

GaN GS61008P(Un-capped/irradiated)


Device-Mounted Boards


www.nasa.gov 10

Manufacturer Part # Parameters# Samples

(control/Irradiated)Radiation Cycling

EPC 2012 200V, 3A, 100mΩ 15/26

GaN SystemsGS61008P 100V, 90A, 7.4mΩ 11/10

GS66508P 650V, 30A, 52mΩ 4/0 Planned

Radiation Exposure

Device Ion Energy (MeV) LET (MeV.cm2/mg) Range (μm) Incidence Angle Facility

EPC Xe 3197 41 286 Normal TAMU*

GaN Systems

Ag 2651 42 - 48 90 Normal TAMU*/LBNL*

Au 2594 87 118 Normal TAMU*/LBNL*

10 ºC/min

10 min

10 min

+125 ºC

-55 ºC

Thermal Cycling:

1000 cycles

Rate: 10 ºC/min

Range: -55 ºC to +125 ºC

Soak time: 10 min

* TAMU: Texas A&M University; LBNL: Lawrence Berkley National Lab


Radiation and Thermal Cycling on GaN Parts


www.nasa.gov 11

Heavy ion response of EPC2012 device k8765 at normal incidence. (Leakage current recovers after irradiation)


EPC 2012 Enhancement Mode Power FET

Courtesy: NASA JPL, L. Scheick


www.nasa.gov 12

Pre-cycling

Control part

Pre-cycling

Irradiated part

Post-cycling

Irradiated part

EPC2012

Pre

cycling

Post 500

cycles

Post 750

cycles

Post 1000

cycles

Cont Irrad Cont Irrad Cont Irrad Cont Irrad

VTH (V) 1.14 0.82 1.12 0.93 1.12 0.94 1.12 0.95

IGLF (µA) 1.19 1.48 1.08 1.54 1.05 1.44 1.03 1.40

IGLR (nA) 109.25 153.58 100.05 134.56 97.66 139.13 95.22 128.61

IDL (µA) 0.32 147.35 0.33 142.73 0.32 151.60 0.30 147.64

VDS (V)VDS (V)

0.0 0.4 0.8 1.2 1.6 2.0

I D (

A)

I D (

A)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0VGS = 2.0V

1.2V

1.4V

1.6V

VDS (V)VDS (V)

0.0 0.4 0.8 1.2 1.6 2.0

I D (

A)

I D (

A)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0VGS = 2.0V

1.2V

1.4V

1.6V

VDS (V)VDS (V)

0.0 0.4 0.8 1.2 1.6 2.0

I D (

A)

I D (

A)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VGS = 2.0V

1.8V

1.2V

1.4V

1.6V


EPC 2012 Enhancement Mode Power FET


www.nasa.gov 13

Heavy ion response of GS61008 device a3260 at normal incidence. (Destructive SEE observed at VDS of 100 V)

0 400 800 1200 1600

Elapsed time [AU]

10-8

10-7

10-6

10-5

10-4

10-3

10-2

Cu

rren

t [A

]

0

40

80

120

Vo

ltag

e [

V]

a3260 GS61008 Au@87 MeV.cm2/mg range=118u

Gate current [A]

Drain current [A]

Drain voltage [V]

Gate Voltage [V]


GaN Systems GS61008P Power FET

Courtesy: NASA JPL, L. Scheick


www.nasa.gov 14

GS61008P

Pre

cycling

Post 500

cycles

Post 750

cycles

Post 1000

cycles

Cont Irrad Cont Irrad Cont Irrad Cont Irrad

VTH (V) 0.90 0.98 0.87 0.98 0.90 0.99 0.90 0.99

IGLF (µA) 35.23 73.05 35.45 82.27 35.15 81.09 35.20 80.53

IGLR (nA) 1.21 1.26 1.11 1.25 1.07 1.24 1.06 1.22

IDL (µA) 4.94 131.50 3.94 129.58 3.99 125.58 3.97 122.80

Pre-cycling

Control part

Pre-cycling

Irradiated part

Post-cycling

Irradiated part

0.0 0.5 1.0 1.5 2.0 2.5 3.00.0

0.2

0.4

0.6

0.8

1.0

1.2

VDS (V)VDS (V)

I D (

A)

I D (

A)

1.6V

1.8V

1.7V

1.5V

VGS = 2.0V

1.9V

0.0 0.5 1.0 1.5 2.0 2.5 3.00.0

0.2

0.4

0.6

0.8

1.0

1.2

VDS (V)VDS (V)

I D (

A)

I D (

A)

VGS = 2.0V

1.9V1.8V

1.7V

1.6V

1.5V

0.0 0.5 1.0 1.5 2.0 2.5 3.00.0

0.2

0.4

0.6

0.8

1.0

1.2

VDS (V)VDS (V)

I D (

A)

I D (

A)

VGS = 2.0V

1.9V

1.8V

1.7V

1.6V

1.5V


GaN Systems GS61008P Power FET


www.nasa.gov

Parameter Value

Drain-Source Voltage, VDS (V) 900

Gate Threshold Voltage, VTH (V) 2.1 @ VDS = 10V, ID = 5mA

Drain Current, ID (A) 36

Drain-Source On-Resistance,

RDS(ON) (mΩ)

65 @ VGS = 15V, ID = 20A

Zero Gate Voltage Drain Current,

IDSS (µA)

1 @ VDS = 900V, VGS = 0V

Gate-Source Leakage Current, IGSS(nA)

10 @ VGS = 15V, VDS = 0V

Operating Temperature, T (°C) -55 to +150


HTRB Test of Cree 900V SiC N-Channel

Power MOSFETs


www.nasa.gov

Samples: 3 pristine, 6 irradiated

Duration: 1000 hours

Temperature: 150 °C

Bias: 80 % rated BVDSS, VGS = 0 V

Procedure per MIL-STD-750 Method 1042.3 & NASA

Guideline EEE-INST-002

Parameters:

Gate threshold voltage

Drain leakage current

Gate leakage current

Drain-source breakdown voltage

Measurements at 23 °C & at +150 °C at intervals


HTRB Test


www.nasa.gov 17To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020

Test Board


www.nasa.gov 18

VDS (V)VDS (V)

0 400 800 1200 1600

I D (

µA

) w

ith

VG

S =

0V

I D (

µA

) w

ith

VG

S =

0V

0

20

40

60

80

100

120

IRRADIATED

PRISTINE


Breakdown of Pristine & Irradiated SiC

Devices (Pre-HTRB)


www.nasa.gov

In addition to WBG devices themselves, supporting

electronics need to be identified/developed for use in

designs

Considerations for supporting electronics in WBG

designs:

Responsive to faster switching speeds

Extended operating temperature range

Layout to minimize parasitics

GRC has selected various supporting electronics

such as gate drivers and pulse width modulation

(PWM) controllers to test operation over extended

temperature range


WBG Supporting Electronics Considerations


www.nasa.gov

Perform tests varying the following conditions:

Supply voltage

Switching frequency

Temperature

Examples of parameters measured:

Rise and fall times

Turn-on and turn-off propagation delays

Current


Test Conditions


www.nasa.gov

Evaluation of TI UC1846-SP rad-tolerant PWM controller

QML-V part, TID 40krad (Si) tolerant, current-mode controller

Rated for -55 ºC to +125 ºC

Test temperature range -192 ºC to +140 ºC, cold-restart, thermal cycling


Performance & Reliability Assessment of

Supporting Electronics for WBG Power Devices


www.nasa.gov

Pre-cycling waveforms of reference (yellow), oscillator (green), and output (red and blue) signals at

+140 ºC, +23 ºC, & -120 ºC (L to R)

Post-cycling waveforms of reference (yellow), oscillator (green), and output (red and blue) signals at

+140 ºC, +23 ºC, & -120 ºC (L to R)


Evaluation of TI 1846-sp Rad-Tolerant

PWM Controller


www.nasa.gov

Performance & Reliability Assessment of Supporting

Electronics for WBG Power Devices

Evaluation of Isolated Gate Driver, ADuM4121

Pre- & post-cycling propagation delays, switching times, & supply current at 10 kHz frequency

Supply current versus temperature at various

frequencies of ADuM4121 gate driver

Turn-on

Propagation

Delay, tDLH(ns)

Turn-off

Propagation

Delay, tDHL(ns)

Rise Time,

tr (ns)

Fall Time

tf (ns)

Supply

Current (mA)

T (°C) Pre Post Pre Post Pre Post Pre Post Pre Post

+20 29.00 28.00 37.00 36.00 14.00 14.50 14.50 14.00 2.27 2.30

-190 25.00 25.00 30.00 30.00 15.50 17.50 13.50 15.50 1.45 1.50

+140 34.00 33.00 43.00 43.00 15.50 15.50 15.50 16.00 2.67 2.66

ADuM4121 driver chip mounted on test board

Rise (blue) & fall (red) times of ADuM4121

as a function of temperature

ADuM4121 turn-on (blue) & turn-off (red)

propagation delays versus temperature

Temperature (°C)

-200 -150 -100 -50 0 50 100 150 200

Pro

pagati

on

Del

ay, t

DL

H (

ns)

10

15

20

25

30

35

40

45

50

Pro

pagati

on

Del

ay, t

DH

L (

ns)

10

15

20

25

30

35

40

45

50

Temperature (°C)

-200 -150 -100 -50 0 50 100 150 200

Ris

e T

ime

(ns)

0

5

10

15

20

25

30

Fall

Tim

e (n

s)

0

5

10

15

20

25

30

Temperature (°C)

-200 -150 -100 -50 0 50 100 150 200

Su

pp

ly C

urr

ent

ID

D1 (

mA

)

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

1000 kHz500 kHz

10 kHz

50 kHz

100 kHz



www.nasa.gov

AEC-Q101 Qualified, 1N4448 WSF Diodes, Inc. 0.5A diode

Rated temperature -65 ºC to +150 ºC

Test temperature range -192 ºC to +150 ºC, thermal cycling

Six pristine & six life-tested (at Navy Crane) samples

24

Forward Voltage, VF (V)Forward Voltage, VF (V)

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Fo

rward

Cu

rren

t, I

F (

A)

Fo

rward

Cu

rren

t, I

F (

A)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

@-1

92 ºC

@-1

00 º

C

@-75 ºC

@ 25 ºC

@+50 ºC

@-1

50 º

C

@-50 ºC

@+100 ºC

@+1

50 ºC

FORWARD CHARACTERISTICS


Evaluation of COTS & Automotive-Grade EEE Parts

Under Extreme Temperatures and Thermal Cycling


www.nasa.gov 25

Voltage (V)Voltage (V)

050100150200

Cu

rren

t (A

)C

urr

en

t (A

)

0.000000

0.000005

0.000010

0.000015

0.000020

0.000025

@+150

ºC

@+100 ºC

@ 25 ºC

@+50 ºC

@-50 ºC @-150 ºC

@-100 ºC

@-75 ºC

@-1

92 º

C

DIODE REVERSE CHARACTERISTICS


Evaluation of COTS & Automotive-Grade EEE Parts

Under Extreme Temperatures and Thermal Cycling


www.nasa.gov 26

GaN power transistors (GSFC/JPL) Flip-chip and ball-grid array (JPL)

Automotive-grade diodes (MSFC/Navy)Shuttle GPS preamplifier (JSC/Boeing/ULA)



Collaborations


www.nasa.gov 27

GaN-based motor controller (GRC)

Space-qualified capacitors (External customer) Flexible printed circuit board (LaRC)

JWST cryogenic stepper motor controller (GSFC)



Collaborations


www.nasa.gov

ACKNOWLEDGMENT

This collaborative work was performed in support of the

NASA Electronic Parts and Packaging (NEPP) Program.

Part of this work was done at the NASA Glenn Research

Center under GEARS Contract # 80GRC020D003.


Documents

Wide Bandgap Reliability and Application Guidelines · 2020. 7. 10. · Wide Bandgap Reliability and Application Guidelines NEPP-Supported GRC Activities Kristen Boomer, NASA GRC