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Wide-BandgapElectronic Devices

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Cambridge University Press978-1-107-41305-4 - Wide-Bandgap Electronic Devices: Materials Research SocietySymposium Proceedings: Volume 622Editors: Randy J. Shul, Fan Ren, Wilfried Pletschen and Masanori MurakamiFrontmatterMore information

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MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 622

Wide-BandgapElectronic Devices

Symposium held April 24-27, 2000, San Francisco, California, U.S.A.

EDITORS:

Randy J. ShulSandia National Laboratories

Albuquerque, New Mexico, U.S.A.

Fan RenUniversity of Florida

Gainesville, Florida, U.S.A.

Wilfried PletschenFraunhofer-IAF

Freiburg, Germany

Masanori MurakamiKyoto University

Kyoto, Japan

Materials Research SocietyWarrendale, Pennsylvania






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CONTENTS

Preface x v

Materials Research Symposium Proceedings xvi

SiC DEVICES

*SiC And GaN High-Voltage Power Devices Tl.lT. Paul Chow

* Investigations Of Non-Micropipe X-Ray Imaged CrystalDefects In SiC Devices T1.2

Philip G. Neudeck, Maria A. Kuczmarski, Michael Dudley,William M. Vetter, Haibin B. Su, Luann J. Keys,and Andrew J. Trunek

PD/AIN/Si Or SiC Structure for Hydrogen Sensing Device T1.3Flaminia Serina, C. Huang, G. W. Auner, R. Naik, S. Ng,and L. Rimai

*Comprehensive Study Of The Electrothermal Operation OfSiC Power Devices Using A Fully Coupled Physical TransportModel T1.5

Martin Lades, Winfried Kaindl, and Gerhard Wachutka

Implanted Bipolar Technology In 4H-SiC T1.7Nick G. Wright, C. M. Johnson, Anthony G. O'Neill,Alton Horsfall, Sylvie Ortolland, Kazuhiro Adachi,Andrew P. Knights, and Paul G. Coleman

Isothermal I-V Characteristics Of 4H-SiC p-n Diodes WithLow Series Differential Resistivity At Avalanche Breakdown ...T1.8

Konstantin V. Vassilevski, Konstantinos Zekentes,Alexander V. Zorenko, and Leonid P. Romanov

*Invited Paper






HI-NITRIDE DEVICES—ELECTRONIC

*Insulator/GaN Heterostructures Of Low Interfacial Density OfStates X2.2

Minghwei Hong, Hock M. Ng, J. Kwo, A. Refik Kortan,Jim N. Baillargeon, K. Alex Anselm, Joe P. Mannaerts,Alfred Y. Cho, C. M. Lee, Jen Inn Chyi, T. Sheng Lay,F. Ren, C. R. Abernathy, and Stephen J. Pearton

*AlGaN-Based Microwave Transmit and Receive Modules T2.4John C. Zolper

Polarization Induced 2DEG In MBE-Grown AlGaN/GaNHFETs: On The Origin, DC And RF Characterization T2.5

Ramakrishna Vetury, I. P. Smorchkova, Christopher R. Elsass,Benjamin Heying, Stacia Keller, and Umesh K. Mishra

Potential Of GaN Gunn Devices For High Power GenerationAbove 200 GHz T2.6

Ridha Kamoua, Yiming Zhu, and Yunji Corcoran

Temperature Dependence and Current Transport MechanismsIn AlxGa!_xN Schottky Rectifiers T2.7

A. P. Zhang, X. A. Cao, G. Dang, F. Ren, J. Han,J.-I. Chyi, C.-M. Lee, C.-C. Chuo, and T.E. Nee

Fabrication Of Enhancement-Mode GaN-Based Metal-Insulator-Semiconductor Field Effect Transistor T2.9

P. Chen, R. Zhang, Y.G. Zhou, S.Y. Xie, Z.Y. Luo,Z.Z. Chen, W.P. Li, S.L. Gu, and Y.D. Zheng

III-NITRIDE DEVICES: ELECTRONICAND PHOTONIC

GaN pnp Bipolar Junction Transistors Operated To 250°C ..T3.2A. P. Zhang, G. Dang, F. Ren, J. Han, C. Monier, A. G. Baca,X. A. Cao, H. Cho, C. R. Abernathy, and S. J. Pearton

Current Gain Simulation Of Npn AlGaN/GaN HeterojunctionBipolar Transistors T3.3

C. Monier, S. J. Pearton, Albert G. Baca, P. C. Chang,L. Zhang, J. Han, R.J. Shul, F. Ren, and J. LaRoche

* Invited Paper

VI






*Design And Performance Of Nitride-Based Ultraviolet LEDs T3.6M. H. Crawford, J. Han, R. J. Shul, M. A. Banas, J. J. Figiel,and L. Zhang

•Present Status Of Ill-Nitride Based Photodetectors T3.7Eva Monroy, Fernando Calle, Jose Luis Pau, Elias Munoz,Franck Omnes, Bernard Beaumont, and Pierre Gibart

A Comparative Study Of AlGaN- And GaN-Based LasingStructures For Near- And Deep-UV Applications T3.8

Sergiy Bidnyk, Jack B. Lam, Gordon G. Gainer, Brian D. Little,Yong-Hwang Kwon, Jin-Joo Song, Gary E. Bulman, andHua-Shuang Kong

GROWTH AND CHARACTERIZATIONOF WIDE-BANDGAPMATERIALS

Low Temperature Lateral Epitaxial Growth Of SiliconCarbide On Silicon T4.1

Chacko Jacob, Juyong Chung, Moon-Hi Hong, Pirouz Pirouz,and Shigehiro Nishino

SiC Epitaxial Growth On Porous SiC Substrates T4.2Galyna Melnychuck, Marina Mynbaeva, Svetlana Rendakova,Vladimir Dmitriev, and Stephen E. Saddow

DLTS Study Of 3C-SiC Grown On Si Using Hexamethyldisilane T4.3Masashi Kato, Masaya Ichimura, Eisuke Arai, Yasuichi Masuda,Yi Chen, Shigehiro Nishino, and Yutaka Tokuda

Non-Contact Characterization Of Recombination Processes In 4H-SiC T4.4Kevin Matocha, T.P. Chow, and R.J. Gutmann

*GaN Based Quantum Dot Heterostructures T4.5Michael A. Reshchikov, Jie Cui, Feng Yun, Alison Baski,Marshall I. Nathan, and Hadis Morkoc

Lateral Polarity Heterostructures By Overgrowth OfPatterned AlxGa!_xN Nucleation Layers T4.6

Roman Dimitrov, V. Tilak, M. Murphy, W. J. Schaff,L. F. Eastman, A. P. Lima, C. Miskys, O. Ambacher, andM. Stutzmann

*Invited Paper

vn






Single Crystal Growth Of Gallium Nitride Substrates Using AHigh-Pressure High-Temperature Process T4.8

Rajiv K. Singh, Donald R. Gilbert, Francis Kelly,Robert Chodelka, Reza Abbaschian, Stephen J. Pearton,Alexander Novikov, Nikolay Patrin, and John Budai

Lateral And Vertical Growth Study In The Initial Stages OfGaN Growth On Sapphire With ZnO Buffer Layers ByHydride Vapor Phase Epitaxy T4.9

Shulin Gu, Rong Zhang, Ling Zhang, and T. F. Kuech

Improved Heteroepitaxial MBE GaN Growth With A GaMetal Buffer Layer T4.10

Yihwan Kim, Sudhir G. Subramanya, Joachim Krueger,Henrik Siegle, Noad Shapiro, Robert Armitage, Henning Feick,Eicke R. Weber, Christian Kisielowski, Yi Yang, andFranco Cerrina

GROWTH AND CHARACTERIZATIONOFIII-NI TRIBES

* Measurement Of Transit Time And Carrier Velocity UnderHigh Electric Field In Ill-Nitride P-I-N Diodes T5.1

Michael Wraback, H. Shen, J. C. Carrano, T. Li,and J. C. Campbell

Cathodoluminescence Of Lateral Epitaxial Overgrowth GaN:Dependencies On Excitation Conditions T5.2

G. S. Cargill III, Eva Campo, Lanping Yue, J. Ramer,M. Schurman, and I. T. Ferguson

Photoconductivity Recombination Kinetics In GaN Films T5.4Mira Misra and Theodore D. Moustakas

Effect Of Interface Manipulation For MBE Growth Of A1N On6H-SiC T5.6

Koichi Naniwae, Jeff Hartman, Chris Petrich,Robert F. Davis, and Robert J. Nemanich

* Invited Paper






Characterization Of Thin GaN Layers Deposited By HydrideVapor Phase Epitaxy (HVPE) On 6H-SiC Substrates T5.7

John T. Wolan, Yaroslav Koshka, S. E. Saddow,Yu V. Melnik, and V. Dmitriev

Real Time Observation And Characterization Of DislocationMotion, Nitrogen Desorption And Nanopipe Formation In GaN T5.8

Eric A. Stach, Christian F. Kisielowski, William S. Wong,Timothy Sands, and Nathan W. Cheung

2DEGs And 2DHGs Induced By Spontaneous AndPiezoelectric Polarization In AlGaN/GaN Heterostructures T5.10

Oliver Ambacher, Angela Link, Stefan Hackenbuchner,M. Stutzmann, Roman Dimitrov, Michael Murphy, Joe Smart,Jim R. Shealy, Bruce Green, William J. Schaff, and Les F. Eastman

High Room-Temperature Hole Concentrations Above 1019 cm"3

In Mg-Doped InGaN/GaN Superlattices T5.llKazuhide Kumakura, Toshiki Makimoto, and Naoki Kobayashi

WIDE-BANDGAP DEVICES, MA TERIAIS,AND PROCESSING

Pendeo Epitaxy Of 3C-SiC On Si Substrates T6.3Geoffrey E. Carter, Tsvetanka Zheleva, Galyna Melnychuck,Bruce Geil, Kenneth Jones, and Stephen E. Saddow

The Temperature Dependent Breakdown Voltage For 4H- and6H-SiC Diodes T6.4

You-Sang Lee, M. K. Han, and Y. I. Choi

A Study Of Pt/AlN/6H-SiC MIS Structures For Device Applications T6.5Margarita P. Thompson, Gregory W. Auner, Changhe Huang,and James N. Hilfiker

Improved Sensitivity SiC Hydrogen Sensor T6.6Claudiu Iulian Muntele, Daryush Ila, Eric K. Williams,Iulia Cristina Muntele, A. Leslie Evelyn, David B. Poker,and Dale K. Hensley

Hall Effect Measurements At Low Temperature Of ArsenicImplanted Into 4H-Silicon Carbide T6.7

J. Senzaki, K. Fukuda, Y. Ishida, Y. Tanaka, H. Tanoue,N. Kobayashi, T. Tanaka, and K. Arai

IX






The Formation And Characterization Of Epitaxial TitaniumCarbide Contacts To 4H-SiC T6.9

Sang-Kwon Lee, Erik Danielsson, Carl-Mikael Zetterling,Mikael Ostling, Jens-Petter Palmquist, Hans Hogberg, and Ulf Jansson

Arsenic Incorporation In Gallium Nitride Grown ByMetalorganic Chemical Vapor Deposition UsingDimethylhydrazine And Tertiarybutylarsenic T6.ll

Steffen Kellermann, Kim-Man Yu, Eugene E. Haller,and Edith D. Bourret-Courchesne

P-GaAs Base Regrowth For GaN HBTs And BJTs T6.13Gerard Dang, A. P. Zhang, X. A. Cao, F. Ren, S. J. Pearton,H. Cho, W. S. Hobson, J. Lopata, J. M. Van Hove, J. J. Klaassen,C. J. Polley, A. M. Wowchack, P. P. Chow, and D. J. King

TEM Study Of High Quality GaN Grown By OMVPE UsingAn Intermediate Layer T6.14

Mourad Benamara, Z. Liliental-Weber, S. Kellermann, W. Swider,J. Washburn, J. H. Mazur, and E. D. Bourret-Courchesne

Transient Photoresponse From Co Schottky Barriers On AlGaN T6.15Reinhard Schwarz, Manfred Niehus, L. Melo, Pedro Brogueira,Svetoslav Koynov, Manfred Heuken, Dirk Meister, andBruno Karl Meyer

Comparison Of Different Substrate Pre-Treatments On TheQuality Of GaN Film Growth On 6H-, 4H-, And 3C-SiC T6.16

Ki Hoon Lee, Moon-Hi Hong, Kasif Teker, Chacko Jacob,and Pirouz Pirouz

Dislocations Produced By Indentation Deformation Of HPVEGaN Films T6.18

Moon-Hi Hong, Pirouz Pirouz, P. M. Tavernier, and David R. Clarke

Formation And Characterization Of Oxides On GaN Surfaces T6.20David Mistele, Thomas Rotter, Fritz Fedler, Harald Klausing,Olga K. Semchinova, Jens Stemmer, Jochen Aderhold,and Jiirgen Graul

Achievements And Characterizations Of GaN With Ga-PolarityIn Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy T6.22

Xu-Qiang Shen, T. Ide, S. H. Cho, M. Shimizu, S. Hara,and H. Okumura






Nature Of Low-Frequency Excess Noise In n-Type GalliumNitride T 6 - 2 3

Changfei F. Zhu, W.K. Fong, B. H. Leung, C. C. Cheng, andC. Surya

Monte Carlo Based Calculation Of Transport Parameters ForWide-Bandgap Device Simulation T6.24

Enrico Bellotti, Maziar Farahmand, Hans-Erik Nilsson,Kevin F. Brennan, and P. Paul Ruden

Design Of AlGaN/GaN Heteroj unction Bipolar TransistorStructures T6.25

Yumin Zhang, Cheng Cai, and P. Paul Ruden

Thermal Modeling Of Ill-Nitride Heterostructure Field EffectTransistors T6.26

T. Li, P. Paul Ruden, J. D. Albrecht, M. G. Ancona,and R. Anholt

Long Time-Constant Trap Effects In Nitride HeterostructureField Effect Transistors T6.28

Xiaozhong Dang, Peter M. Asbeck, Edward T. Yu,Karim S. Boutros, and Joan M. Redwing

Short Gate Length AlGaN/GaN HEMTs T6.29Oliver Breitschadel, L. Kley, H. Grabeldinger, B. Kuhn,F. Scholz, and H. Schweizer

Plasma-Induced Damage And Passivation Of GaN In ElectronCyclotron Resonance Excited N2 Plasma Source T6.30

Jyh-Tsung Hsieh, O. Breitschadel, M. Rittner, L. W. Fu,and H. Schweizer

Ohmic Contact Formation Mechanism Of Pd-Based ContactTop-GaN T6.31

Dae-Woo Kim, Joon Cheol Bae, Woo Jin Kim, Hong Koo Baik,Chong Cook Kim, Jung Ho Je, and Chang Hee Hong

Channeling Defects In Group-Ill Nitrides During Dry EtchingProcesses T6.33

Oliver Breitschadel, J. T. Hsieh, B. Kuhn, F. Scholz,and H. Schweizer






Microstructure And Thermal Stability Of Transition MetalNitrides And Borides On GaN T6.34

Jacek Bogdan Jasinski, E. Kiminski, Anna Piotrowska,Adam Barcz, and Marcin Zielinski

Lattice Parameters And Thermal Expansion Of ImportantSemiconductors And Their Substrates T6.35

Robert R. Reeber and Kai Wang

Reactive Ion Etching Of CVD Diamond In CF4/O2, O2 andO2/Ar Plasmas.. T6.36

Patrick W. Leech, Geoffrey K. Reeves, and Anthony S. Holland

PROCESSING OF III-NITRIDEMATERIALS

*Device Processing For GaN High Power Electronics T7.1Stephen J. Pearton, X. A. Cao, H. Cho, K. P. Lee, C. Monier,F. Ren, G. Dang, A.P. Zhang, W. Johnson, J. R. LaRoche, B. P. Gila,C. R. Abernathy, R. J. Shul, A. G. Baca, J. Han, J.-I. Chyi, andJ. M. Van Hove

Electric And Morphology Studies Of Ohmic Contacts OnAlGaN/GaN T7.4

Vinayak Tilak, R. Dimitrov, M. Murphy, B. Green, J. Smart,W. J. Schaff, J. R. Shealy, and L. F. Eastman

Inductively Coupled High-Density Plasma-Induced EtchDamage Of GaN MESFETs T7.5

Randy J. Shul, L. Zhang, A. G. Baca, Christi G. Willison,J. Han, S. J. Pearton, K. P. Lee, and F. Ren

Surface Disordering And Nitrogen Loss In GaN Under IonBombardment T7.9

S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, M. Toth,M. R. Phillips, H. H. Tan, G. Li, and S. J. Pearton

* Invited Paper

xn






SiC PROCESSING

*The Materials Properties Of A Nickel Based CompositeContact To n-SiC For Pulsed Power Switching T8.2

Melanie W. Cole, P. C. Joshi, F. Ren, C. W. Hubbard,M. C. Wood, and M. H. Ervin

Stable Ti/TaSi2/Pt Ohmic Contacts On n-Type 6H-SiCEpilayer At 600°C in Air T8.3

Robert S. Okojie, David Spry, Jeffery Krotine, Carl Salupo,and Donald R. Wheeler

High-Dose Titanium Ion Implantation Into Epitaxial Si/3C-SiC/SiLayer Systems For Electrical Contact Formation T8.4

Jorg K.N. Lindner, Stephanie Wenzel, and Bernd Stritzker

Characterization Of n-Type Layer By S+ Ion Implantation In4H-SiC T8.6

Yasunori Tanaka, Naoto Kobayashi, Hajime Okumura,Sadafumi Yoshida, Masataka Hasegawa, Masahiko Ogura,and Hisao Tanoue

The Effects Of Post-Oxidation Anneal Conditions On InterfaceState Density Near The Conduction Band Edge And InversionChannel Mobility For SiC MOSFETs T8.7

Gilyong Chung, Chin-Che Tin, John Robert Williams,Kyle McDonald, M. DiVentra, S. T. Pantelides, Len C. Feldman,and Robert A. Weller

Effects Of Electrode Spacing On Reactive Ion Etching Of 4H-SiC T8.8Janna R. Bonds, Geoff E. Carter, Jeffrey B. Casady,and James D. Scofield

Deep RIE Process For Silicon Carbide Power Electronics And MEMS T8.9Glenn Beheim, and Carl S. Salupo

Silicon Carbide Die Attach Scheme For 500°C Operation T8.10Liang-Yu Chen, Gary W. Hunter, and Philip G. Neudeck

Author Index

Subject Index

*Invited Paper

xiii











PREFACE

Interest in wide-bandgap semiconductors for high-power/high-temperature electronicsremains prominent. For such applications, SiC is by far the most mature semiconductormaterial; however, GaN and diamond have also become prime candidates. From a purelymaterial property perspective, diamond has several advantages over the other two materials;however, producing large single-crystals as well as the inability to achieve n-type doping havelimited device fabrication. For GaN, recent advances in crystal growth and processingcapabilities, as well as excellent transport properties, have yielded a great deal of devicedevelopment, yet thermal conduction remains an issue. SiC has excellent thermal conductivity,high-breakdown voltages, and well-developed substrates and processing techniques.

The "Wide-Bandgap Electronic Devices" symposium, held April 24-27 at the 2000 MRSSpring Meeting in San Francisco, California, dealt with a wide range of technical activity in thearea of wide-bandgap high-power/high-temperature electronic devices. The 102 paperspresented in this symposium covered topics including the fabrication and performance of GaN-based and SiC-based devices as well as issues related to growth, characterization, and processingof wide-bandgap materials. Several summaries of the current status of high-power/high-temperature-based GaN and SiC electronic devices were given.

We would like to thank the Invited Speakers Paul Chow, Philip Neudeck, Bill Mitchel,Gerhard Wachutka, Michael Shur, M. Hong, John Zolper, James Van Hove, J. Wagner, MaryCrawford, Eva Monroy, Hadis Morkoc, Michael Wraback, Steve Pearton, Suzanne Mohney,Kenneth Jones, and Melanie Cole, and Session Chairs M. Asif Khan, Phil Neudeck, MaryCrawford, Michael Shur, Michael Wraback, James Van Hove, Hadis Morkoc, Suzanne Mohney,Melanie Cole, Kenneth Jones, Steve Pearton, and Jim Williams.

Generous financial support from the Army Research Office contributed to the success ofthis symposium.

Randy J. ShulFan RenWilfried PletschenMasanori Murakami

September 2000






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 578— Multiscale Phenomena in Materials—Experiments and Modeling, I.M. Robertson, D.H. Lassila,R. Phillips, B. Devincre, 2000, ISBN: 1-55899-486-6

Volume 579— The Optical Properties of Materials, J.R. Chelikowsky, S.G. Louie, G. Martinez, E.L. Shirley2000, ISBN: 1-55899-487-4

Volume 580— Nucleation and Growth Processes in Materials, A. Gonis, P.E.A. Turchi, AJ. Ardell, 2000ISBN: 1-55899-488-2

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Volume 585— Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing,S. Moss, E.H. Chason, B.H. Cooper, T. Diaz de la Rubia, J.M.E. Harper, R. Murti, 2000,ISBN: 1-55899-493-9

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Volume 613— Chemical-Mechanical Polishing 2000—Fundamentals and Materials Issues, R.K. Singh, R. Bajaj,M. Meuris, M. Moinpour, 2000, ISBN: 1-55899-521-8

Volume 614— Magnetic Materials, Structures and Processing for Information Storage, B.J. Daniels, M.A. Seigler,T.P. Nolan, S.X. Wang, C.B. Murray, 2000, ISBN: 1-55899-522-6

Volume 615— Polycrystalline Metal and Magnetic Thin Films—2000, L. Gignac, O. Thomas, J. MacLaren,B. Clemens, 2000, ISBN: 1-55899-523-4

Volume 616— New Methods, Mechanisms and Models of Vapor Deposition, H.N.G. Wadley, G.H. Gilmer,W.G. Barker, 2000, ISBN: 1-55899-524-2

Volume 617— Laser-Solid Interactions for Materials Processing, D. Kumar, D.P. Norton, C.B. Lee, K. Ebihara,X. Xi, 2000, ISBN: 1-55899-525-0

Volume 618— Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films,J.M. Millunchick, A-L. Barabasi, E.D. Jones, N. Modine, 2000, ISBN: 1-55899-526-9

Volume 619— Recent Developments in Oxide and Metal Epitaxy—Theory and Experiment, M. Yeadon,S. Chiang, R.F.C. Farrow, J.W. Evans, O. Auciello, 2000, ISBN: l-55899-527T7

Volume 620— Morphology and Dynamics of Crystal Surfaces in Complex Molecular Systems, J. DeYoreo,W. Casey, A. Malkin, E. Vlieg, M. Ward, 2000, ISBN: 1-55899-528-5

Volume 621— Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays, K.L. Jensen,W. Mackie, D. Temple, J. Itoh, R. Nemanich, T. Trottier, P. Holloway, 2000,ISBN: 1-55899-529-3

Volume 622— Wide-Bandgap Electronic Devices, R.J. Shul, F. Ren, M. Murakami, W. Pletschen, 2000,ISBN: 1-55899-530-7

Volume 623— Materials Science of Novel Oxide-Based Electronics, D.S. Ginley, D.M. Newns, H. Kawazoe,A.B. Kozyrev, J.D. Perkins, 2000, ISBN: 1-55899-531-5

Volume 624— Materials Development for Direct Write Technologies, D.B. Chrisey, D.R. Gamota, H. Helvajian,D.P. Taylor, 2000, ISBN: 1-55899-532-3

Volume 625— Solid Freeform and Additive Fabrication—2000, S.C. Danforth, D. Dimos, F.B. Prinz, 2000,ISBN: 1-55899-533-1

Volume 626— Thermoelectric Materials 2000—The Next Generation Materials for Small-Scale Refrigeration andPower Generation Applications, T.M. Tritt, G.S. Nolas, G. Mahan, M.G. Kanatzidis, D. Mandrus,2000, ISBN: 1-55899-534-X

Volume 627— The Granular State, S. Sen, M. Hunt, 2000, ISBN: 1-55899-535-8Volume 628— Organic/Inorganic Hybrid Materials—2000, R.M. Laine, C. Sanchez, E. Giannelis, C.J. Brinker,

2000, ISBN: 1-55899-536-6Volume 629— Interfaces, Adhesion and Processing in Polymer Systems, S.H. Anastasiadis, A. Karim,

G.S. Ferguson, 2000, ISBN: 1-55899-537-4Volume 630— When Materials Matter—Analyzing, Predicting and Preventing Disasters, M. Ausloos, A.J. Hurd,

M.P. Marder, 2000, ISBN: 1-55899-538-2

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






Documents

Wide-Bandgap Electronic Devicesassets.cambridge.org/97811074/13054/frontmatter/9781107413054… · Flaminia Serina, C. Huang, G. W. Auner, R. Naik, S. Ng, and L. Rimai *Comprehensive