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1 What is needed under the hood What is needed under the hood of Nanotechnology... of Nanotechnology... Shekhar Borkar Shekhar Borkar Intel Corp. Intel Corp. Feb 10, 2007 Feb 10, 2007

What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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Page 1: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

1

What is needed under the hood What is needed under the hood of Nanotechnology...of Nanotechnology...

Shekhar Borkar Shekhar Borkar Intel Corp.Intel Corp.

Feb 10, 2007Feb 10, 2007

Page 2: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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OutlineOutline

Evolution of Electronics to CMOSEvolution of Electronics to CMOS

The three tenetsThe three tenets

Technology outlookTechnology outlook

ChallengesChallenges

Potential solutionsPotential solutions

SummarySummary

Page 3: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

3

Evolution of ElectronicsEvolution of Electronics0

1

1850 1875 1900 1925 1950 1975 2000 2025

Mechanical

Electro-Mechanical

Electronic-VT

Bipolar

NMOS

CMOS…….���� ?

All cross-road technologies show1. Gain2. Signal/Noise3. Scalability

PerformanceEnergyPrice/Performance

Page 4: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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The Three TenetsThe Three Tenets

GainInput Output

Energy

(1)

Signal/NoiseInput Output

(2)

Scalability, in some shape or form

(3)

Page 5: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

5

ElectroElectro --Mechanical scalingMechanical scaling ——RelaysRelays

1928, Otis Elevator

Page 6: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

6

Vacuum TubesVacuum Tubes

1930’s

1920’s

1950’s & 60’s

Page 7: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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SemiconductorsSemiconductors

The first transistor

The first integrated circuit 4004 Pentium® 4

Page 8: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

8

1.E-211.E-18

1.E-151.E-12

1.E-091.E-06

1.E-031.E+00

1940 1960 1980 2000 2020

Cub

ic M

eter

Vacuum tube

Transistor

NMOS

CMOS

Benefits of ScalingBenefits of Scaling

1.E-11

1.E-09

1.E-07

1.E-05

1.E-03

1.E-01

1.E+01

1940 1960 1980 2000 2020

Del

ay (

Sec

) Vacuum tube

Transistor

NMOS

CMOS

1.E-161.E-141.E-121.E-101.E-081.E-061.E-041.E-021.E+00

1940 1960 1980 2000 2020

Joul

es

Vacuum tube

Transistor

NMOS

CMOS

1.E-061.E-051.E-041.E-031.E-021.E-011.E+001.E+011.E+02

1940 1960 1980 2000 2020

Cos

t ($)

Vacuum tubeTransistor

NMOS

CMOS

Page 9: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

9

Technology OutlookTechnology Outlook

Medium High Very HighMedium High Very HighVariabilityVariability

Energy scaling will slow downEnergy scaling will slow down>0.5>0.5>0.5>0.5>0.35>0.35Energy/Logic Op Energy/Logic Op scalingscaling

0.5 to 1 layer per generation0.5 to 1 layer per generation88--9977--8866--77Metal LayersMetal Layers

1111111111111111RC DelayRC Delay

Reduce slowly towards 2Reduce slowly towards 2--2.52.5<3<3~3~3ILD (K)ILD (K)

Low Probability High ProbabilitLow Probability High ProbabilityyAlternate, 3G etcAlternate, 3G etc

128

1111

20162016

High Probability Low ProbabilitHigh Probability Low ProbabilityyBulk Planar Bulk Planar CMOSCMOS

Delay scaling will slow downDelay scaling will slow down>0.7>0.7~0.7~0.70.70.7Delay = CV/I Delay = CV/I scalingscaling

256643216842Integration Integration Capacity (BT)Capacity (BT)

88161622223232454565659090Technology Technology Node (nm)Node (nm)

20182018201420142012201220102010200820082006200620042004High Volume High Volume ManufacturingManufacturing

Page 10: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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Si Substrate

Metal Gate

High-kTri-Gate

S

G

D

III-V

S

Carbon Nanotube FET

50 nm

35 nm

30 nm

SiGe S/D

Strained Silicon

SiGe S/D

Strained Silicon

90 nm65 nm

45 nm32 nm

20042006

20082010

2012+

Technology Generation

20 nm 10 nm

5 nm5 nm

5 nm

Nanowire

Manufacturing Development Research

CMOS Research ContinuesCMOS Research Continues ……

Page 11: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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CMOSCMOS——Cross Road?Cross Road?

………………

Cross Road False AlarmsCross Road False Alarms

< 1.5nm< 1.5nm

22 nm22 nm

65 nm65 nm

130 nm130 nm

0.5 0.5 µµ

1 1 µµ

??SD TunnelingSD Tunneling

EUV, Self assemblyEUV, Self assemblyLithographyLithography

HiHi--K + Metal GateK + Metal GateGate LeakageGate Leakage

Leakage control, Leakage control, avoidance, toleranceavoidance, tolerance

SD LeakageSD Leakage

More metals, Cu Low K More metals, Cu Low K ILDILD

InterconnectsInterconnects

Device EngineeringDevice EngineeringShort Channel EffectsShort Channel Effects

Page 12: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

12

WhatWhat ’’s in sight after CMOS?s in sight after CMOS?

Which technology shows gain?Which technology shows gain?

Satisfactory signal to noise ratio?Satisfactory signal to noise ratio?

• At room temperature?

Scalability in some shape or form?Scalability in some shape or form?

• Performance, Energy, Cost

Research must continue to find oneResearch must continue to find one

Then it will take 10Then it will take 10--15 years to mature15 years to mature

Until thenUntil then……

CMOS will continue…CMOS will continueCMOS will continue ……

Page 13: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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……But With Challenges!But With Challenges!

0

50

100

150

200

250H

eat F

lux

(W/c

m2)

Heat Flux (W/cm 2)—Vcc variation

40

50

60

70

80

90

100

110

Tem

pera

ture

(C

)

Temp Variation & Hot spots

10

100

1000

10000

1000 500 250 130 65 32

Technology Node (nm)

Mea

n N

umbe

r of

Dop

ant

Ato

ms

Random Dopant Fluctuations

0.01

0.1

1

1980 1990 2000 2010 2020

micron

10

100

1000

nm193nm193nm248nm248nm365nm365nm LithographyLithography

WavelengthWavelength

65nm65nm90nm90nm

130nm130nm

GenerationGeneration

GapGap

45nm45nm32nm32nm

13nm 13nm EUVEUV

180nm180nm

Source: Mark Bohr, Intel

Sub-wavelength Lithography

Page 14: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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YesterdayYesterday ’’s Freelance Layouts Freelance Layout

Vss

Vdd

OpIp

Vss

Vdd

Op

No layout restrictionsNo layout restrictionsNo layout restrictions

Page 15: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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Transistor Orientation RestrictionsTransistor Orientation Restrictions

Vss

Vdd

OpIp

Vss

Vdd

Op

Transistor orientation restricted to improve manufacturing control

Transistor orientation restricted to improve Transistor orientation restricted to improve manufacturing controlmanufacturing control

Page 16: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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Op

Vss

Vdd

Ip

Vss

Vdd

Op

Transistor Width QuantizationTransistor Width Quantization

Page 17: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

17

TodayToday ’’s Unrestricted Routings Unrestricted Routing

Page 18: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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Future Metal RestrictionsFuture Metal Restrictions

Page 19: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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ReliabilityReliability

Soft Error FIT/Chip (Logic & Mem)

0

50

100

150

180

130 90 65 45 32 22 16

Rel

ativ

e

Time dependent device degradation

0

1

1 2 3 4 5 6 7 8 9 10

Time

Ion

Rel

ativ

e

Burn-in may phase out…?

1

10

100

1000

10000

180 90 45 22

Jox

(Rel

ativ

e)Hi-K?

?

Extreme device variations

0

50

100

100 120 140 160 180 200

Vt(mV)

Rel

ativ

e

Wider

Page 20: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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Implications to ReliabilityImplications to ReliabilityExtreme variations (Static & Dynamic) will Extreme variations (Static & Dynamic) will result in unreliable componentsresult in unreliable components

Impossible to design reliable system as we Impossible to design reliable system as we know todayknow today

• Transient errors (Soft Errors)

• Gradual errors (Variations)

• Time dependent (Degradation)

Reliable systems with unreliable components —Resilient µµµµArchitectures

Reliable systems with unreliable components Reliable systems with unreliable components ——Resilient Resilient µµµµµµµµArchitecturesArchitectures

Page 21: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

21

Implications to Design & TestImplications to Design & Test

Design with regular fabricDesign with regular fabric

OneOne--timetime--factory testing will be outfactory testing will be out

BurnBurn--in to catch chip infantin to catch chip infant--mortality will not mortality will not be practicalbe practical

Test HW will be part of the designTest HW will be part of the design

Dynamically selfDynamically self--test, detect errors, test, detect errors, reconfigure, & adaptreconfigure, & adapt

Page 22: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

22

In a NutIn a Nut --shellshell ……

100 Billion

Transistors

100 BT integration capacity

Billions unusable (variations)

Some will fail over time

Yet, deliver high performance in the power & cost envelope

Yet, deliver high performance in the power & Yet, deliver high performance in the power & cost envelopecost envelope

Intermittent failures

Page 23: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

23

Recipe for ResiliencyRecipe for Resiliency

1.1. DetectDetect

2.2. IsolateIsolate

3.3. ConfineConfine

4.4. ReconfigureReconfigure

5.5. Recover & adaptRecover & adapt

1.1. CircuitCircuit

2.2. FirmwareFirmware

3.3. PlatformPlatform

4.4. SoftwareSoftware

5.5. ApplicationApplication

Page 24: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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Resiliency with ReconfigurationResiliency with Reconfiguration

Dynamic onDynamic on--chip testingchip testing

Performance profilingPerformance profiling

Spare hardwareSpare hardware

Binning strategyBinning strategy

Dynamic, fine grain, Dynamic, fine grain, performance and power performance and power managementmanagement

CoarseCoarse--grain redundancy grain redundancy checkingchecking

Dynamic error detection & Dynamic error detection & reconfiguration reconfiguration

Decommission aging HW, swap Decommission aging HW, swap with sparewith spare

Dynamically…1. Self test & detect2. Isolate errors3. Confine4. Reconfigure, and5. Adapt

DynamicallyDynamically ……1.1. Self test & detectSelf test & detect2.2. Isolate errorsIsolate errors3.3. ConfineConfine4.4. Reconfigure, andReconfigure, and5.5. AdaptAdapt

CC

CC

CC

CC

CC

CC

CC

CC

Page 25: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

25

Shifts towards the Shifts towards the NanoNano --eraera

Reliable systems with Reliable systems with unreliable componentsunreliable components

Reliable componentsReliable components

Regular design fabricRegular design fabricIrregular, freeIrregular, free--lance designlance design

Global optimizationGlobal optimizationLocal optimizationLocal optimization

Probabilistic designProbabilistic designDeterministic designDeterministic design

ToToFromFrom

Do not try to mimic CMOS with Nano-technology(Imagine trying to build Babbage’s difference engine with CMOS)

Invent a new theory of computation

Time will be just ripe then for Time will be just ripe then for NanoNano--technologytechnology

Page 26: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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Why Bother?Why Bother?

$1

$10

$100

$1,000

$10,000

$100,000

1960 1970 1980 1990 2000 2010

Lith

o T

ool C

ost (

$K)

G. MooreISSCC 03

Litho Cost

$1

$10

$100

$1,000

$10,000

1960 1970 1980 1990 2000 2010

Fab

Cos

t ($M

)

www.icknowledge.com

FAB Cost

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1960 1970 1980 1990 2000 2010

$/T

rans

isto

r

$ per Transistor

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1960 1970 1980 1990 2000 2010

$/M

IPs

$ per MIPS

Page 27: What is needed under the hood of Nanotechnologycadlab.cs.ucla.edu/icsoc/protected-dir/IC-DFN_Agenda_Feb_2007/... · 3 Evolution of Electronics 0 1 1850 1875 1900 1925 1950 1975 2000

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SummarySummary

Three tenets: Gain, Signal/Noise, ScalabilityThree tenets: Gain, Signal/Noise, Scalability

Nothing on the horizon yet that satisfies themNothing on the horizon yet that satisfies them

But research must continue to find oneBut research must continue to find one

Probably a lot different than CMOSProbably a lot different than CMOS——dondon’’t try to t try to mimic CMOS!mimic CMOS!

Several challenges lay ahead, but when have they Several challenges lay ahead, but when have they not?not?