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8/13/2019 Weizmann October2008
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Disorder and magnetic field tunedinsulating state in a-InO
superconducting films
1Department of Condensed Matter Physics, Weizmann Institute of Science
2Department of Condensed Matter Physics, Geneva University
Benjamin Sacp1,2, Maoz Ovadia1, Dan Shahar1
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Outline
1. Introduction
2. Linear transport
3. Non-linear transport
4. Electron overheating
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Outline
1. Introduction
2. Linear transport
3. Non-linear transport
4. Electron overheating
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1/T [K]
Disorder-drivenSuperconductor-Insulator Transition
0exp T
RT
I1 : T0= 0.25 K
I2 : T0= 0.38 K
I3 : T0 = 0.61 K
Titanium nitride thin filmsd 5 nm
T. I. Baturina, C. Strunk, M. R. Baklanov, and A. Satta
PRL 98, 127003 (2007)
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V. F. Gantmakher et al., JETP 82, 951 (1996)
Disorder-drivenSuperconductor-Insulator Transition
Amorphous Indium Oxyde
D. Shahar and Z. Ovadyahu, Phys. Rev. B 46, 10917, (1992)
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Magnetic field-tuned SIT
TiNInOx
G. Sambandamurthy, L.W. Engel, A. Johansson, E.
Peled, D. Shahar, PRL 94, 017003, (2005)
T. Baturina, C. Strunk, M. Baklanov,A. Satta,PRL 98, 127003, (2007)
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Magnetic field-tuned SIT
Activated regime 10( ) exp T
R T RT
G. Sambandamurthy, L.W. Engel, A. Johansson, D.
Shahar,PRL 92, 107005, (2004)
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Collective insulating state
G. Sambandamurthy, L.W. Engel, A. Johansson, E.
Peled, D. Shahar, PRL 94, 017003, (2005)
Magnetic field-tuned insulating stateInOx
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Collective insulating state
G. Sambandamurthy, L.W. Engel, A. Johansson, E.
Peled, D. Shahar, PRL 94, 017003, (2005)
T. Baturina, A. Mironov, V. Vinokur, M. Baklanov,
C. Strunk,PRL 99, 257003, (2007)
Magnetic field-tuned insulating stateInOxDisorder-tuned insulating stateTiN
Strong instability occurs around T* ~ 0.1KZero conductive state ?
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Superconductor-Insulator Transition (SIT)
Alternative answer :Joule overheating of electrons
(B. Altshuler, V. Kravtsov, I. Lerner, I. Aleiner, cond-mat/0810.4312)
Question :
Origin of this instability in the I-V curves
New phase transition at T*~0.1K ?
Superinsulating state ?
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Outline
1. Introduction
2. Linear-transport
3. Non-linear transport
4. Electron overheating
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R(T)
InO-I : Thickness = 30 nm, R(300K) ~ 2 k/
InO-S: same sample after 4 days of annealing at 300K
InO-I
InO-S
Amorphous Indium Oxide
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Magnetoresistance(2 probes measurements)
InO-I InO-S
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Activated regime under magnetic field ?
InO-I
(note: perpendicular field)
Before the MR peak:Over-activation ?
After the MR peak:Sub-activation ?
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InO-S
Activated regime only around the magnetoresistance peak !
Activated regime under magnetic field ?
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Outline
1. Introduction
2. Linear transport
3. Non-linear transport B-dependence of voltage threshold Low current branch
4. Electron overheating
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I(V) curves at B=0T
InO-I
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I(V) curves at B=8T
InO-I
VTchanges by 3 orders of magnitude !
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I(V) curves at B=12T
InO-I T* < 30mK
T* decrease at high field
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I(V) curves InO-S
InO-S
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B-dependence of the voltage threshold
VT(B=0) = 2 mV
InO-SInO-I
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T cV B B
VTchanges by 4 orders of magnitude
VTfollows a power law with B
2.1
0.8
B-dependence of the voltage threshold
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VTchanges by 4 orders of magnitude
VTfollows a power law with B
2.1
0.8
B-dependence of the voltage threshold
Length scale L behind VT?
eEL T
16 1.2
2 10
T
T
nm for V V L
mm for V V
Answer : no !
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Outline
1. Introduction
2. Linear transport
3. Non-linear transport B-dependence of voltage threshold Low current branch
4. Electron overheating
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Current below VT?
InO-I
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Current below VT?
InO-I InO-S
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Low-current branch
I-V is linear at low voltage !
InO-S
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I-V is exponential at higher bias
Low-current branch
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Extrapolation of the linear resistance
Possible fit :
linear for V
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Extrapolation of the linear resistance
Possible fit :
linear for V
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00
exp 1V
I V IV
Extrapolation of the linear resistance
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Extrapolation of R(T)
Sub-activation seems confirmed at high field
InO-S
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Superinsulator ?
Question: is there a superinsulator state in InOx ?
Answer: No !
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Current jump in YxSi1-x
Activated regime(T0~ 0.5K)for both thin (40nm) and thick(7m) films
Absence of superconductingcorrelations
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Outline
1. Introduction
2. Linear-transport
3. Non-linear transport
4. Electron overheating
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Overheating of electrons
cond-mat / 0810.4312
2
6 6
( ) el ph
el
Vc T T A
R T
Heat balance equation (dirty metal) :
0
0
( ) expR T RT
Insulating behaviour :
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Overheating of electrons
cond-mat / 0810.4312
2
6 6
( ) el ph
el
Vc T T
R T
Heat balance equation (dirty metal) :
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Electronic temperature
B. Altshuler et al.
cond-mat / 0810.4312
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Electronic temperature
( , ) ( , )ph phdI
G V T V T dV
1( ) ( 0, )ph ph elR T G V T T
( , )el phT V T
B. Altshuler et al.
cond-mat / 0810.4312
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Electronic temperature
( , )el ph
T V T
B. Altshuler et al.
cond-mat / 0810.4312
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Electron overheating
2
2 6 6( , )
( ) ph el ph
el
VV G V T c T T
R T Heat balance equation :
[W]
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Electron overheating
2
2 6 6( , )
( ) ph el ph
el
VV G V T c T T
R T Heat balance equation :
[W]
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Summary
Voltage threshold : changes by 4 orders of magnitude
follows a power law with field
Low-current branch : Linear at low bias
Exponential at higher bias
give an extrapolation of R(T)
Electron overheating : Give an alternative description
Justify the extrapolation of R(T) from the I-V cuvres
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Thank you for your attention
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Electron overheating
2
2 6 6( , )
( ) ph el ph
el
VV G V T c T T
R T Heat balance equation :
C =.V => = 1 nW/m3/K6
( In a metal : ~ 1 nW/m3/K5 )
Application: heating Tel= 90mK and Tph=20mK
Metal P=V2/R ~ 6e-7 nW/m3
Dirty metal P=V2/R ~ 5e-6 nW/m3
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Extrapolation of R(T)
InO-SActivated ? Efros-Shklovskii ?
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Four probes measurments
Anisotropy
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Anisotropy
Perpendicular Field
Parallel Field
B dependence of the voltage
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B-dependence of the voltagethreshold
Fluctuations of VTstop at the maximum of VT(B)
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Electron overheating
2
2 6 6( , )
( ) ph el ph
el
V V G V T c T T R T
Heat balance equation :
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I(V) curves at B=12T
InO-I T* < 30mK
T* decrease at high field