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Joint 20th AIRAPT – 43th EHPRG, June 27 – July 1, Karlsruhe/Germany 2005
1-x x
Vladimir V. Shchennikov*, Sergey V. OvsyannikovHigh Pressure Group, Institute of Metal Physics of Russian Academy of Sciences, Urals
Division, 18 S. Kovalevskaya Str., GSP- 170, Yekaterinburg 620041, RUSSIA,*e-mail: [email protected]
1-
x x
1-x x
P
∗ ∗ 3
Joint 20th AIRAPT – 43th EHPRG, June 27 – July 1, Karlsruhe/Germany 2005
9-9 6-66-9
Fig. 1. The arrangement of asample in the high pressurechamber. Pressure is createdby a piston's displacement.Magnetic field isperpendicular to figure’splane.1 – cylindrical high pressure vessel,2 – a plug (obturator),3 – combined gasket (metal and ribbon rings),4 – epoxy compound (for encapsulation),5 – a sample,6 – a thermocouple,7 – copper electrical leads,8 – manganin gauge coil,9 – point of electrical outputs to a sample.
1-x x x
n ∗ 18 -3 ρ ∗ -4 Ω⋅ x n ∗ 18 -3 ρ ∗ -4
Ω⋅ x T
ρρ
P
∼1-x x
SS
Joint 20th AIRAPT – 43th EHPRG, June 27 – July 1, Karlsruhe/Germany 2005
Fig. 2. Electrical resistance (a) and thermoelectric power (b) at hydrostatic pressures P at T=297 Kfor Hg1-xCdxSe single crystals with a different content of substitution Cd atoms x: 1 – 0,03; 2 – 0.07.At P increasing the phase transition begins near ~ 1.4 -1.7 GPa, while for P decreasing the returnone – below 1 GPa.
µB
21 BABMR
∆S
B = 22 B
ekA
S⊥ B TBQ , 3 ekrAQ
Q ∆S⊥ ∆S
e k µ eτ m mτ r
ε τ ε εr
1 2 3
µB µB B ≥
Br 1
2 r 32 2
Si 1 π π 2 π π 3 π
Joint 20th AIRAPT – 43th EHPRG, June 27 – July 1, Karlsruhe/Germany 2005
Fig. 3. The dependencies of longitudinal (a, c) and transverse (b, d) Nernst-Ettingshauseneffects under increasing of hydrostatic pressure P (shown on the plots) on magnetic fields B atT=297 K for Hg1-xCdxSe (a, b – x=0.03; c, d – x=0.07).
PEg Γ8 Γ6
P1-x x x≥ 1-x x x Γ6 Γ8
P Eg
µ 1-x xEg
1-x x xx
1-x xx≈
µ P x
P
(d)(c)
Joint 20th AIRAPT – 43th EHPRG, June 27 – July 1, Karlsruhe/Germany 2005
x P x
L X
1-x x
x x
Al’tshuler A.M., Vekilov Y.K., Umarov G.R., 1976. High Temp.–High Pres., 8, 635.Al’tshuler A.M., Vekilov Y.K., Umarov G.R., 1978. physica status solidi (b), 90, 733.Berchenko N.N., Krevs V.E., Sredin V.G., 1982. Semiconductor solid solutions and their application
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Sol. State Phys., 15, 657.Gluzman N.G., Shchennikov V.V., 1979. Sov. Phys. Solid State, 21, 1844.Jayaraman A., Klement W. Jr., Kennedy G.C., 1963. Phys. Rev., 130, 2277.Kafalas J.A., Gatos H.C., Lavine M.C., Banus M.D., 1962. J. Phys. Chem. Solids, 23, 1541.Keldysh L.V., Kopaev Y.V., 1964. Fizika Tverdogo Tela, 6, 2791.Lombos B.A., Chicopoulos B., Bhattacharja B., Pant B.C., 1976. Canad J. Phys, 54, 48.McMahon M.I., Nelmes R.J., 1996. physica status solidi (b), 198, 389.Narita S., Egawa M., Suizu K., Katayama M., Mizukati S., 1973. Appl. Phys., 2, 151.Ovsyannikov S.V., Shchennikov V.V., 2003. Physica E, 17, 546.Ovsyannikov S.V., Shchennikov V.V., 2004. Physica B, 344, 190.Paul W., Warshawer D. (Eds). 1963. Solids under pressure (McGraw-Hill book company, Inc.).Porowski S., Galazka M.C., 1964. physica status solidi, 5, K71.Qadri S.B., Skelton E.F., Webb A.W., Carpenter E.R. Jr., Schaefer M.W., Furdyna J.K, 1987. Phys.
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Joint 20th AIRAPT – 43th EHPRG, June 27 – July 1, Karlsruhe/Germany 2005
Seeger K., 1973. Semiconductor Physics (Springer-Verlag, Wien–New York).Schenk M., Fissel A., 1988. J. Crystal Growth, 86, 502.Shchennikov V.V., Govaleshko N.P., Gluzman N.G., Paranchich L.D., 1980. Sov. Phys. Solid State,
22, 1676.Shchennikov V.V., Gavaleshko N.N., Frasunyak V.M., 1993. Phys. Solid State, 35, 199.Shchennikov V.V., 1995. Phys. Solid State, 37, 551.Shchennikov V.V., Umarov G.R., Frolova N.Y., 1997a. Rev. High Pres. Sci. Tech., 6, 707.Shchennikov V.V., Derevskov A.Y., Smirnov V.A., 1997b. Proceedings of SPIE, 3213, 261.Shchennikov V.V., Ovsyannikov S.V., 2001. JETP Letters, 74, 486.Shchennikov V.V., Ovsyannikov S.V., 2002. Solid State Commun., 121, 323.Shchennikov V.V., Ovsyannikov S.V., 2003a. physica status solidi (b), 235, 288.Shchennikov V.V., Ovsyannikov S.V., 2003b. JETP Letters, 77, 88.Shchennikov V.V., Ovsyannikov S.V., 2003c. Solid State Commun., 126, 373.Shchennikov V.V., Ovsyannikov S.V., Frolova N.Yu., 2003d. J. Phys. D: Appl. Phys., 36, 2021.Tsidil'kovskii I.M., 1962. Thermomagnetic effects in semiconductors (Academic press, New York).Tsidil’kovskii I.M., Shchennikov V.V., Gluzman N.G., 1985. Sov. Phys. Solid State, 27, 269.Tsidilkovski I.M., 1986. Electron spectrum of gapless semiconductors (Springer-Verlag Berlin
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