(12) United States Patent Lay et al.

US006531330B2

US 6,531,330 B2 Mar. 11, 2003

(10) Patent N0.: (45) Date of Patent:

(54)

(75)

(73) (*)

(21) (22) (65)

(30) Jul.

(51) (52) (58)

METHOD OF FABRICATING THIN FILM TRANSISTOR FLAT PANEL DISPLAY

Inventors: Chung-Wen Lay, Taipei (TW); Meng-Yueh Wu, Hsinchu (TW)

Assignee: AU Optronics Corp., Hsinchu (TW) Notice: Subject to any disclaimer, the term of this

patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days.

Appl. No.: 10/200,831 Filed: Jul. 22, 2002

Prior Publication Data

US 2003/0017636 A1 Jan. 23, 2003

Foreign Application Priority Data 23, 2001 ..................................... .. 90117932 A

Int. Cl.7 .............................................. .. H01L 21/00 US. Cl. ....................... .. 438/30; 438/149; 438/151;

438/479; 438/517 Field of Search ........................ .. 438/30, 149, 151,

438/479, 517

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(56) References Cited

U.S. PATENT DOCUMENTS

6,372,535 B1 * 2002/0121639 A1 *

4/2002 Lyu 9/2002 S0 et al.

* cited by examiner

Primary ExaminerJohn F. Niebling Assistant ExaminerStanetta Isaac (74) Attorney, Agent, or FirmLadas & Parry (57) ABSTRACT A method of fabricating a thin ?lm transistor (TFT) ?at panel display. The method merely comprises four mask steps of: (1) using the ?rst mask process for patterning the ?rst conductive layer/gate insulating layer/amorphous silicon layer of the TFT, (2) using the second mask process for de?ning the passivation layer and the etching stopper, (3) using the third mask process for forming the Source/Drain, and (4) using the fourth mask process for forming the pixel electrode, Whereby simplifying the fabricating process of the TFT ?at panel display.

12 Claims, 19 Drawing Sheets

/ ~~100

103 101 102

103 101 102

U.S. Patent Mar. 11,2003 Sheet 1 0f 19 US 6,531,330 B2

3

1

FIG. 1A ( PRIOR ART ) 5 2

40 IIIIIII

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FIG. 1B ( PRIOR ART )

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FIG. 1C ( PRIOR ART ) 2 5

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FIG. 1D ( PRIOR ART )

U.S. Patent Mar. 11,2003 Sheet 2 0f 19 US 6,531,330 B2

DLg

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I

FIG.2A

DLg opl 0p2

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BL B 'LLjl'JL \JDL 5%

0p3

FIG. 2B

U.S. Patent Mar. 11,2003 Sheet 3 0f 19 US 6,531,330 B2

FIG. 2D

U.S. Patent Mar. 11,2003 Sheet 4 0f 19 US 6,531,330 B2

11 I

fDLp fDLg 1 1 \ 1 1 / 1 1 / \ / / \ @400 1 ( \ 1 ( \ 103 101 103 101

102 102

FIG. 3A

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U.S. Patent Mar. 11,2003 Sheet 5 0f 19 US 6,531,330 B2

II I

0p3 104 (IS)

I I "?g/3| ' ~\./105 1 \ ' 1\

104g / 1 1 1 / 11 @9104 11 1 T/ /\ ~100

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FIG. 3C

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107- 1 1 1 / 11 ~V104 1 1 1 7 //\ ~~100 ) 1 1 k 1 ( 1 101 104 103 101

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U.S. Patent Mar. 11,2003 Sheet 6 0f 19 US 6,531,330 B2

FIG. 4A

11 1

0P3 104

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i 1'1 104* / 1 l /W ~V104

f / ~~100 I ( \ 1 f ( \

103 101 104 103 101 102 102

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U.S. Patent Mar. 11,2003 Sheet 7 0f 19 US 6,531,330 B2

II I

0p3 IS >DLp

f 106 106

104 104 100

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FIG. 4C

FIG. 4D

U.S. Patent Mar. 11,2003 Sheet 8 0f 19 US 6,531,330 B2

Dig DL y

B f B. *i-____m?______i i-ui gym I

FIG.5A

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lili BL |_ _J

0p3

FIG. 5B

U.S. Patent Mar. 11,2003 Sheet 9 0f 19 US 6,531,330 B2

FIG. 5C

U.S. Patent Mar. 11,2003 Sheet 10 0f 19 US 6,531,330 B2

1 1 1 l

f-DLp f DLg

\ \

1 / / / \ / / ~100 I ( \ / ( 103 101 103 101

102 102

FIG. 6A

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U.S. Patent Mar. 11,2003 Sheet 11 0f 19 US 6,531,330 B2

11 1

0P3 104

l KDLP } 106J/ N106 , 105d/ 1 105 1 1

104-I / 1 1 / 1 12,104 / \ L 7 / /\ ~100 I ( \ 1 I ( \

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FIG. 6C

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102 DLp DLlg

U.S. Patent Mar. 11,2003 Sheet 12 0f 19 US 6,531,330 B2

Dig: DL '

B f B. Al ____ ____L__t i?-i ML __l

FIG. 7A

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FIG. 7B

U.S. Patent Mar. 11,2003 Sheet 14 0f 19 US 6,531,330 B2

/ / \ / \ V100 103 101 103 101

102 102

FIG. 8A

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0P3 104

104g 1 1 \h "@104 / \ 1 f / /\ ~w~100 / ( \ 1 k I ( \ 103 10] 104 103 101

I02 102 DLg

U.S. Patent Mar. 11,2003 Sheet 15 0f 19 US 6,531,330 B2

1 104VJ/ 1 ~~104 \1 / /\ 1 7/ 1 ( \ 1 K1 ( \ 103 101 104 103 101

102 102 DLg

FIG.8C

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FIG. 8D

U.S. Patent Mar. 11,2003 Sheet 16 0f 19 US 6,531,330 B2

DLg

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FIG. 9A

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W 0 0

FIG. 9B

U.S. Patent Mar. 11,2003 Sheet 18 0f 19 US 6,531,330 B2

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FIG. 10A

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II. \_/106 III] r 71: ? SL I M104 2 ,6 1 '4 . '/ 1 1 "'4

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FIG. 10B

U.S. Patent Mar. 11,2003 Sheet 19 0f 19 US 6,531,330 B2

11 I

S107(T2) 103 103 limlios 1% SL 305

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FIG. 10C