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Tutorial #4 – selected problems. Problem 1 (Problem 3.7 Streetman) Given m n * and m p * from Table 3-1 p 65, calculate the effective densities of states N c and N v for GaAs at 300K (assume m n * and m p * do not vary with temperature). Calculate the intrinsic carrier concentration. - PowerPoint PPT Presentation
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Tutorial #4 – selected problems
Problem 1 (Problem 3.7 Streetman)Given mn* and mp* from Table 3-1 p 65, calculatethe effective densities of states Nc and Nv for GaAsat 300K (assume mn* and mp* do not vary with temperature). Calculate the intrinsic carrier concentration.Answer:mn*=0.067m mp*=0.48m T=300KThe effective densities of states are given by:
Nm kT
hcmc
*
2-3n 2
24 35 103 2 17( ) ./
Nm kT
hcmv
p*
2-3 2
28 32 103 2 18( ) ./
The intrinsic carrier concentration is given by
n N N ei c v
-E
2kTg
Eg=1.43eV
ni=1.87 x 106 cm-3
Problem 2 For silicon doped to 1014 donors/cm3: Calculate the temperature where the total electron carrier density in this semiconductor is equal to twice the donor concentration. (This gives a good estimate of where the sample changes from “extrinsic” to “intrinsic” behavior.)
Answer: If the material is to remain electrostatically neutral, the sum of the positive charges (holes and ionized donor atoms) must balance the sum of the negative
charges (electrons and ionized acceptor atoms):p0 + Nd
+ = n0 + Na-
Nd+ = 1014 cm-3 Na
- = 0 cm-3
n0 = 2 Nd+ cm-3
p0 = n0 – Nd+ = 1014 (2-1) = 1014 cm-3
ni2 = n0p0
n (T) = n pkT
hm m ei 0 0 2 n
*p* -
E
2kTg
22 3 2 3 4( ) ( )/ /
0422.0)mm(k)2(2
h pneT
4/3*p
*n
3/2
3002kT
E-3/2
g
where h=6.63 x 10-34 J·s k=1.38 x 10-23 J/K = 8.62 x 10-5 eV/K mn
*= 1.1·(9.11 x 10-31 kg) mp
*=0.56·(9.11 x 10-31 kg) Eg = 1.11eV
0422.0eT T
6438.5-3/2
So,
We can solve for T in various ways.One way is to let a calculator solve the equation.
Another way is to solve for T using Excel orQuattro Pro.
T Tpower3/2 exp(-6438.5/T) (Tpower3/2) * exp(-6438.5/T)
300 5196.2 4.779E-10 2.483E-06
400 8000 1.022E-07 0.0008177
500 11180 2.556E-06 0.0285789
510 11517 3.29E-06 0.0378966
513.9 11650 3.621E-06 0.0421863
514 11653 3.63E-06 0.0423016
515 11687 3.719E-06 0.0434697
T=513.9K.
You can start with e.g. T = 300 K. Check lastcolumn to see how close you are to 0.0422.
Repeat for 400 K and 500 K. Increase to 510 K, and then 515 K. Decrease to 514 K. Fine tune by trying 513.9 K. This value gives a product close to 0.0422.
Therefore,
3. Show that for acceptor doping concentration NA
the equilibrium hole concentration p0 is
)4(2
1 220 iAA nNNp
Solution:
=0 n0p0= ni
2
0
2
0 p
nn i
DA NpnN 00
00
2
pp
nN iA
20
20 pnpN iA
020
20
iA npNp
)4(2
1 220 iAA nNNp
negative root not realistic AiA NnN 22 4