TRENCHSTOPTM current RAPID 1 anti parallel diode

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1www.infineon.com 2018-01-11

IKB15N65EH5

Highspeedswitchingseries5thgeneration

TRENCHSTOPTM5highspeedswitchingIGBTcopackedwithfullratedcurrentRAPID1antiparalleldiodeFeaturesandBenefits:

HighspeedH5technologyoffering•Best-in-Classefficiencyinhardswitchingandresonanttopologies•650Vbreakdownvoltage•LowQG•IGBTcopackedwithfullratedcurrentRAPID1fastantiparalleldiode•Maximumjunctiontemperature175°C•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

PotentialApplications:

•EnergyGeneration-SolarStringInverter-SolarMicroInverter•IndustrialPowerSupplies-IndustrialSMPS-IndustrialUPS•MetalTreatment-Welding•EnergyDistribution-EnergyStorage•Infrastructure–Charge-Charger

ProductValidation:

QualifiedforindustrialapplicationsaccordingtotherelevanttestsofJEDEC47/20/22

G

C

E

G

E

C

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKB15N65EH5 650V 15A 1.65V 175°C K15EEH5 PG-TO263-3

Datasheet 2 V2.12018-01-11

IKB15N65EH5


TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 3 V2.12018-01-11

IKB15N65EH5


MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 650 V

DCcollectorcurrent,limitedbyTvjmaxTc=25°CTc=100°C

IC 30.018.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A

Turn off safe operating areaVCE≤650V,Tvj≤175°C,tp=1µs - 45.0 A

Diodeforwardcurrent,limitedbyTvjmaxTc=25°CTc=100°C

IF 32.021.0

A

Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A

Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE

±20±30 V

PowerdissipationTc=25°CPowerdissipationTc=100°C Ptot

105.052.5 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C

ThermalResistance

Valuemin. typ. max.

Parameter Symbol Conditions Unit

RthCharacteristics

IGBT thermal resistance,junction - case Rth(j-c) - - 1.40 K/W

Diode thermal resistance,junction - case Rth(j-c) - - 1.80 K/W

Thermal resistance, min. footprintjunction - ambient Rth(j-a) - - 65 K/W

Thermal resistance, 6cm² Cu onPCBjunction - ambient

Rth(j-a) - - 40 K/W

Datasheet 4 V2.12018-01-11

IKB15N65EH5


ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=15.0ATvj=25°CTvj=125°CTvj=175°C

---

1.651.851.95

2.10--

V

Diode forward voltage VF

VGE=0V,IF=15.0ATvj=25°CTvj=125°CTvj=175°C

---

1.451.421.39

1.70--

V

Gate-emitter threshold voltage VGE(th) IC=0.15mA,VCE=VGE 3.2 4.0 4.8 V

Zero gate voltage collector current ICESVCE=650V,VGE=0VTvj=25°CTvj=175°C

--

-1400

50-

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=15.0A - 22.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 930 -

Output capacitance Coes - 24 -

Reverse transfer capacitance Cres - 4 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=520V,IC=15.0A,VGE=15V - 38.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 7.0 - nH

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 16 - ns

Rise time tr - 17 - ns

Turn-off delay time td(off) - 145 - ns

Fall time tf - 22 - ns

Turn-on energy Eon - 0.40 - mJ

Turn-off energy Eoff - 0.08 - mJ

Total switching energy Ets - 0.48 - mJ

Tvj=25°C,VCC=400V,IC=15.0A,VGE=0.0/15.0V,RG(on)=39.0Ω,RG(off)=39.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

Datasheet 5 V2.12018-01-11

IKB15N65EH5


Turn-on delay time td(on) - 15 - ns








DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time trr - 70 - ns

Diode reverse recovery charge Qrr - 0.50 - µC

Diode peak reverse recovery current Irrm - 10.0 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -600 - A/µs

Tvj=25°C,VR=400V,IF=15.0A,diF/dt=600A/µs






SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=150°CTurn-on delay time td(on) - 16 - ns








Turn-on delay time td(on) - 14 - ns








Datasheet 6 V2.12018-01-11

IKB15N65EH5


DiodeCharacteristic,atTvj=150°C











Datasheet 7 V2.12018-01-11

IKB15N65EH5


Figure 1. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,PO

WER

DISSIPA

TION[W

]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

90

100

110

Figure 2. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLEC

TORCURREN

T[A]

25 50 75 100 125 150 1750

5

10

15

20

25

30

Figure 3. Typicaloutputcharacteristic(Tvj=25°C)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLEC

TORCURREN

T[A]

0 1 2 3 4 50

5

10

15

20

25

30

35

40

45

VGE=20V

18V

12V

10V

8V

7V

6V

5V

4V

Figure 4. Typicaloutputcharacteristic(Tvj=150°C)


IC,C

OLLEC

TORCURREN

T[A]

0 1 2 3 4 50

5

10

15

20

25

30

35

40

45

VGE=20V

18V

12V

10V

8V

7V

6V

5V

4V

Datasheet 8 V2.12018-01-11

IKB15N65EH5


Figure 5. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLEC

TORCURREN

T[A]

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.50

5

10

15

20

25

30

35

40

45Tj=25°CTj=150°C

Figure 6. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tvj,JUNCTIONTEMPERATURE[°C]

VCEsat,C

OLLEC

TOR-EMITTE

RSAT

URAT

ION[V

]

25 50 75 100 125 150 1750.75

1.00

1.25

1.50

1.75

2.00

2.25IC=3,8AIC=7,5AIC=15A

Figure 7. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,RG=39Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

t,SW

ITCHINGTIMES

[ns]

0 5 10 15 20 25 30 35 40 45 501

10

100

td(off)

tftd(on)

tr

Figure 8. Typicalswitchingtimesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=15A,DynamictestcircuitinFigure E)

rG,GATERESISTOR[Ω]

t,SW

ITCHINGTIMES

[ns]

10 20 30 40 50 60 70 80 90 100 110 1201

10

100

1000td(off)

tftd(on)

tr

Datasheet 9 V2.12018-01-11

IKB15N65EH5


Figure 9. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=15A,rG=39Ω,DynamictestcircuitinFigure E)


t,SW

ITCHINGTIMES

[ns]

25 50 75 100 125 1501

10

100 td(off)

tftd(on)

tr

Figure 10. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.15mA)


VGE(th) ,GAT

E-EM

ITTE

RTHRES

HOLD

VOLTAG

E[V]

0 25 50 75 100 125 1501.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0typ.

Figure 11. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,RG=39Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENER

GYLO

SSES

[mJ]

0 5 10 15 20 25 30 35 40 450.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50Eoff

Eon

Ets

Figure 12. Typicalswitchingenergylossesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=15A,DynamictestcircuitinFigure E)

RG,GATERESISTOR[Ω]

E,S

WITCHINGENER

GYLO

SSES

[mJ]

10 20 30 40 50 60 70 80 90 100 110 1200.0

0.2

0.4

0.6

0.8

1.0

1.2Eoff

Eon

Ets

Datasheet 10 V2.12018-01-11

IKB15N65EH5


Figure 13. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=15A,RG=39Ω,DynamictestcircuitinFigure E)


E,S

WITCHINGENER

GYLO

SSES

[mJ]

25 50 75 100 125 1500.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7Eoff

Eon

Ets

Figure 14. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=150°C,VGE=15/0V,IC=15A,rG=39Ω,DynamictestcircuitinFigure E)


E,S

WITCHINGENER

GYLO

SSES

[mJ]

200 250 300 350 400 450 5000.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8Eoff

Eon

Ets

Figure 15. Typicalgatecharge(IC=15A)

QGE,GATECHARGE[nC]

VGE ,GAT

E-EM

ITTE

RVOLTAG

E[V]

0 5 10 15 20 25 30 35 400

2

4

6

8

10

12

14

16130V520V

Figure 16. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)


C,C

APAC

ITAN

CE[pF]

0 5 10 15 20 25 301

10

100

1000

1E+4Cies

Coes

Cres

Datasheet 11 V2.12018-01-11

IKB15N65EH5


Figure 17. IGBTtransientthermalimpedance(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIEN

TTH

ERMAL

IMPE

DAN

CE[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.0503534.7E-5

20.5774464.8E-4

30.6309793.4E-3

40.1211420.022142

50.0189320.19328

Figure 18. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIEN

TTH

ERMAL

IMPE

DAN

CE[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.0674154.2E-5

20.7820384.8E-4

30.7885733.3E-3

40.1461260.022253

50.0228370.192244

Figure 19. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V)

diF/dt,DIODECURRENTSLOPE[A/µs]

trr,R

EVER

SEREC

OVE

RYTIME[ns]

400 450 500 550 600 650 7000

15

30

45

60

75

90

105

120

135

150Tj=25°C, IF = 15ATj=150°C, IF = 15A

Figure 20. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V)


Qrr ,REV

ERSE

REC

OVE

RYCHAR

GE[µC]

400 450 500 550 600 650 7000.0

0.2

0.4

0.6

0.8

1.0

1.2Tj=25°C, IF = 15ATj=150°C, IF = 15A

Datasheet 12 V2.12018-01-11

IKB15N65EH5


Figure 21. Typicalpeakreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


Irrm,R

EVER

SEREC

OVE

RYCURREN

T[A]

400 450 500 550 600 650 7000.0

2.5

5.0

7.5

10.0

12.5

15.0

17.5

20.0

22.5

25.0Tj=25°C, IF = 15ATj=150°C, IF = 15A

Figure 22. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


dIrr /dt,diodepeakrateoffallofI

rr [A/µs]

400 450 500 550 600 650 700-700

-650

-600

-550

-500

-450

-400

-350

-300Tj=25°C, IF = 15ATj=150°C, IF = 15A

Figure 23. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWAR

DCURREN

T[A]

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.250

5

10

15

20

25

30

35

40

45Tj=25°CTj=150°C

Figure 24. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature


VF ,FO

RWAR

DVOLTAG

E[V]

25 50 75 100 125 150 1750.75

1.00

1.25

1.50

1.75

2.00IF=7,5AIF=15AIF=30A

Datasheet 13 V2.12018-01-11

IKB15N65EH5


01

30-08-2007

Z8B00003324

0.039

0.000

0.026

0.335

0.013

0.037

MIN

0.169

0.046

0.280

0.090

0.386

8.60 0.3390.256

0.575

0.632

0.366

0.177

0.421

0.049

0.144

5.08

2.54

1.00

7.10

2.29

9.80

6.50

9.30

4.50

14.61

16.05

10.70

1.25

3.65

0.70

2

0.00

0.65

0.33

8.51

0.95

4.30

MIN

1.17

1.60

1.78

7.90

10.31

3.00

15.88

16.25

9.50

4.70

10.90

1.45

3.85

MAX

4.57

0.25

1.15

0.65

9.45

0.85

1.40

0.200

0.100

0.028

2

0.063

0.070

0.311

0.406

0.118

0.625

0.640

0.374

0.185

0.429

0.057

0.152

0.010

0.180

0.033

0.026

0.372

0.045

MAX

0.055

0

7.5mm

55

0

Package Drawing PG-TO263-3

Datasheet 14 V2.12018-01-11

IKB15N65EH5


t

a b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t

4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

Datasheet 15 V2.12018-01-11

IKB15N65EH5


RevisionHistory

IKB15N65EH5

Revision:2018-01-11,Rev.2.1Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2018-01-11 Final data sheet

Trademarks

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PublishedbyInfineonTechnologiesAG81726München,Germany©InfineonTechnologiesAG2018.AllRightsReserved.

ImportantNoticeTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

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TRENCHSTOPTM current RAPID 1 anti parallel diode