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8/10/2019 TransmissionGate
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Elmore Delay (HO)
Application of Elmore Delay to Mux Design (Ex.
7.4)
Logical Effort of CMOS Transmission Gate (
Dynamic D-Latch
Dynamic Logic
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Distributed RC line as a lumped RC
Ladder
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Lumped
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NMOS TG as a D-Latch
CLK=1, Q=DCLK=1 0, Qlastis stored on C2CLK=0, high impedance state.
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Problems with NMOS TG
1. Q can only rise to VDD-VT2. Clock feedthrough at Q when CLK goes low
3. The output stored in a high-Z stage after
CLK goes low is susceptible to all of the charge loss
mechanisms.
4. is not available
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CMOS TG as a latch
1. Q can only rise to VDD-VT2. Clock feed through at Q when CLK goes low
3. The output stored in a high-Z stage afterCLK goes low is susceptible to all of the charge
loss
mechanisms.
4. is not available
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CMOS TG with a
1. Q can only rise to VDD-VT2. Clock feed through at Q when CLK goes low
3. The output stored in a high-Z stage afterCLK goes low is susceptible to all of the charge
loss
mechanisms.
4. is not available
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Use feedback to statically hold the
logic value when the latch is off (1)
We can NOT drive a load from internal Q
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Use feedback to statically hold the
logic value when the latch is off (2)
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No Feedback when the latch is ON
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Problem & Solution
CLK
Problem: If D and Qprevare different:
Driver + TG1 will drive Q to a different
value while INV2 and NMOS of TG2 will
drive Q to Qprev
Solution: Size the forward path so that it is stronger than the feedback path.
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Adjust VS
Knob:
as defined in EQ. 4.15
Increase(WNLP)/(LNWP) Decreased VS.
Decrease(WNLP)/( LNWP) Increased VS.
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Increase WP to adjust VS
WN/LN=200nm/200nm
WP/LP=200nm/200nm
WN/LN=200nm/200nm
WP/LP=460nm/200nm
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Typical D-Latch Implementation in
CMOS
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Typical D-Latch Implementation in
CMOS
CLK=1
10
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Typical D-Latch Implementation in
CMOS
CLK=0
Qprev=1
10
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Typical D-Latch Implementation in
CMOS
CLK
Qnow=0
Qprev=1
1 0
Optional
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Typical D-Latch Implementation in
CMOS
CLK
Qnow=1
Qprev=00 1
Node X may have difficulty transitioning to 1 until
is 0.Optional
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Schematic of a TG Based D latch
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Simulation of D-Latch
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Zoom in to a transition
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Positive Edge D Flip-flop
D is only transmitted to the output on the rising edge of CLK
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Positive Edge D FF (CLK=0)
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Positive Edge D FF (CLK=1)
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Dynamic NAND
CLK=0 (Pre-Charged Phase)
NMOS is OFF. OUT is charged to VDD.
CLK=1 (Logic Evaluation Phase)NMOS is ON.
If either A or B is GND, OUT=VDD.
If A=B=1, OUT=GND
Precharge Phase is only a small portion of the
clock cycle.
Disadvantage:
All dynamic logic circuits require a clock.
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General Structure of a Dynamic Gate
Disadvantage:
All dynamic logic circuits require a clock
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Examples
Example 7.6
P7.5 (a)
P7.5 (b)
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Problem of Domino Logic Gates
1. During the precharge phase, the output voltage is high.
2. There is an active path to ground as soon as the foot transistor is turned on.
3. Once an output node has been discharged, it cannot go high until the next prechargephase.
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Solution
1. Define each stage as a dynamic gate plus aninverter.
2. The output of each stage is now 0during precharge.
Therefore all NMOS transistors are off during
precharge and can only be turned on during the
evaluation phase.
Disadvantage: An inverter can not be created!
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Domino Cascaded Gates
During the pre-charge phase (=0), Y1, Y2 and Y3 are charged to VDD simultaneously.
=0 does not have to last very long since all stages are pre-charged simultaneously.
has a high duty cycle.
Note: There is no direct current from VDD to GND.
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Exercise
c
b
a
clk
clk
VDD
OutX
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Solution:
Out A BC
1. NMOS network implements
while X implements OUT.
2. The output of Inverter implements
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Implement the expression
Out AB BC C
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Solution
a
b
c
b
clk
clk
VDD
Out
c
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Propagation Delay of Domino
Cascaded Gates
The propagation delay is determined by:
1. The falling edge of the dynamic block
2. The rising edge of the inverter
Y1,Y2and Y3fall like dominos.
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Improve the Rise Time of an Inverter
Design a static inverter with strong pull-up
Increase the size of the PMOS device.
DecreaseWNLP/LNWP Increased Vsof the inverter
StaticInverter
Domino
Gate
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Logical Effort Comparison
5/3 2/3 assuming that CLK is does not
arrive prior to either A or B
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Dynamic NOR Gate
The Dynamic NOR gate is a faster circuit
because only one NMOS device is driven
The pull-down transistors do not fight with the
pull-up devices.
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Limitations of Domino Logic
Charge Sharing
Vx(initially)=0
V*=(Cout)/(Cx+Cout)VDD
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Minimizing the effect of Charge
Sharing Using Keepers
The keepers keep VX at VDD and reduce
charge sharing to minimum. The keeper
transistor is weak enough (small W/L ratioby using a large L) that when X=VDDGND.
NMOS can prevail over weak PMOS.
Disadvantage: large driver requirement of IN
Keepers
X
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Enhancement
The INV sees a minimum length device.
The effective pull-up strength is controlled
by the long device.