Upload
lexuyen
View
228
Download
4
Embed Size (px)
Citation preview
Transistors at Radio Frequency
➤ How to describe transistors at radiofrequency.
➤ Equivalent circuits and S-parameters
➤ Y-parameters and SOLVE
➤ Stability of transistor amplifiers (brief)
➤ The Klapp RF Oscillator
➤ SOLVE Example: The Klapp Oscillator
1 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Transistors at Radio Frequency
➤ Transistors are more complex at high frequencies due to the effects ofinternal parasitic inductance and capacitance.
➤ Always try first to seek S-parameters from manufacturers.
➤ Or use a simulation package that has them in its database.
➤ Failing all this.. do a model. Here’s how.
➤ We try to glean enough information from datasheets and independentmeasurements to form a physical model to predict S-parameters.
2 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
BF199 VHF Transistor
3 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Radio Frequency Transistor circuit model
4 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
BF199 Datasheet
5 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Networks: Y-parameters vs S-parameters
➤ Y-parameters and S-parameters are related:
yi =(1 + S22)(1 − S11) + S12S21
∆Z0
yr =−2S12
∆Z0
yf =−2S21
∆Z0
yo =(1 + S11)(1 − S22) + S12S21
∆Z0
where ∆ = (1 + S11)(1 + S22) − S21S12.
6 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Definition of Y-parameters
➤ Need these for employ solve.
Ii = yiVeb + yrVec
Io = yfVeb + yoVec
7 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Using Solve For Transistors
➤ Consider the base node
Ib = (yi + yr)Veb − yrVcb
➤ Consider the collector node
Ic = (yo + yf)Vec − yfVbc
➤ Consider the emitter node
Ie = (yi + yf)Vbe + (yr + yo)Vce
8 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
BF199 S-parameters
➤ Use Cbe = 100pF (fT = 550MHz), Cbc = 0.5pF , Ic = 7mA andhfe = 100.
107
108
109
0
0.5
1
|S11
|
107
108
109
−200
−100
0
100
200
frequency (Hz)
Deg
rees
angle S11
9 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
BF199 S-parameters
➤ Use Cbe = 100pF (fT = 550MHz), Cbc = 0.5pF , Ic = 7mA andhfe = 100.
107
108
109
0
10
20
30
|S21
|
107
108
109
0
50
100
150
200
frequency (Hz)
Deg
rees
angle S21
10 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
BF199 S-parameters
➤ Use Cbe = 100pF (fT = 550MHz), Cbc = 0.5pF , Ic = 7mA andhfe = 100.
107
108
109
0
0.02
0.04
0.06
|S12
|
107
108
109
0
50
100
150
frequency (Hz)
Deg
rees
angle S12
11 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
BF199 S-parameters
➤ Use Cbe = 100pF (fT = 550MHz), Cbc = 0.5pF , Ic = 7mA andhfe = 100.
107
108
109
0
0.5
1
|S22
|
107
108
109
−20
−15
−10
−5
0
frequency (Hz)
Deg
rees
angle S22
12 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Example: A BF199 Common Emitter Amplifier
➤ Use the large signal equivalent (left) to set the bias point.➤ Use the small signal equivalent (right) to set up SOLVE.
13 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Stability Criteria
➤ Is the transistor stable in isolation? Linville criterion
C =|yryf |
2gigr − real(yryf)
➤ Often we need to know if a transistor amplifier is stable.
➤ If a transistor with given y-parameters is loaded by source and loadadmittances YS = GS + jBS and YL = GL + jBL, then the transistorcircuit is unconditionally stable if,
K =2(gi + GS)(go + GL)
|yryf | + real(yryf)> 1
➤ The Stern Stability Criterion
➤ A number of useful related formulae.. see the web brick.
14 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Klapp RF Oscillator
➤ Model the transistor using S and Y parameters in exactly the same way asthe transistor amplifier.
➤ In the project the oscillator is a VCO: the MC145170 PLL has to control thefrequency of the oscillator by applying a voltage to a varactor diode orvoltage variable capacitor (VVC) .
➤ We need to prove that the oscillator will oscillator and at what frequency.
➤ In SOLVE we inject a current into the tank circuit of the oscillator anddetermine the frequency at which the ractance of the input impedance iszero and the resisitance is negative . WHY?
15 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Varactor Diode
16 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Klapp RF Oscillator
17 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Using SOLVE: Compute S-parameters and Y-parameters
18 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Using SOLVE: Set circuit values
19 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
Using SOLVE: Set SOLVE admittances
20 ENGN4545/ENGN6545: Radiofrequency Engineering L#13
KLAPP oscillator input impedance
1 2 3 4 5 6 7 8 9 10
x 107
−1000
−500
0
500
1000
Rea
l(Z)
at n
ode
1
BF199 local oscillator
1 2 3 4 5 6 7 8 9 10
x 107
−1000
−500
0
500
1000
Imag
(Z)
at n
ode
1
21 ENGN4545/ENGN6545: Radiofrequency Engineering L#13