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2002-06-17Page 1

SPP80N06S2L-H5SPB80N06S2L-H5

OptiMOS Power-Transistor

Product Summary

V DS 55 V

R DS(on) 5 mΩ

I D 80 A

Feature

• N-Channel

• Enhancement mode

• 175°C operating temperature

• Avalanche rated

• dv /dt rated

P- TO263 -3-2 P- TO220 -3-1

Marking

2N06LH5

2N06LH5

Type Package Ordering Code

SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054

SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current1)

T C=25°C

T C=100°C

I D

80

80

A

Pulsed drain current

T C=25°C

I D puls 320

Avalanche energy, single pulse

I D=80 A ,

V DD=25V,

R GS=25

Ω

E AS 700 mJ

Repetitive avalanche energy, limited by T jmax2) E AR 30

Reverse diode dv /dt

I S=80A, V DS=44V, di /dt =200A/µs, T jmax=175°C

dv /dt 6 kV/µs

Gate source voltage V GS ±20 V

Power dissipation

T C=25°C

P tot 300 W

Operating and storage temperature T , T stg -55... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56