Upload
others
View
0
Download
0
Embed Size (px)
Citation preview
THIN FILMS
Edited byG. Hecht, F. Richter, J. Hahn
Proceedings of the joint
4th International Symposium on Trends and NewApplications in Thin Films - TATF '94
and the
11 th Conference on High Vacuum, Interfaces andThin Films - HVITF '94
rfv DVGSocie'te Fran^aise Deutsche Vakuumd u V d e GeseBschat
INFORMATIONSGESELLSCHAF>VERLAG
Contents
I. Deposition Processes
Plasma and Deposition Interactions With an Enhanced Arc 3B. Coll, Rockaway, USA
Theoretical and Experimental Studies of Transport Phenomenain PVD Processes 18J. Machet, Limoges, France
MOCVD of Cr-Based Coatings: Suitable OrganochromiumCompounds for Low Temperature Deposition Processes 24F. Maury, Toulouse, France
Diamond CVD - a Status Report 30C.-P. Klages, Hamburg, Germany
Tungsten and Copper for ULSI Multilevel Metallization 36T. Gefiner, Chemnitz, Germany
High-Current Arc - A New Source for High Rate Deposition 42P. Siemroth, T. Schulke, B. Schultrich, Dresden, Germany
The Developement of Cr-Al-N Coatings by the Multi Source Arc Process 46O. Knotek, H. J. Scholl, Aachen, Germany
Design and Performance of Linear Magnetron SputteringSystems 52K. Miernik, Radom, Poland
Hollow-Cathode Plasma Sources and its Use in Coating Technologies 56B. Bucken, W. Grimm, J. Wolfframm, Dresden, Germany
CAE Multicomponent Coatings: Technology and Industrial Applitions 60B. A. Eizner, G. V. Markov, A. A. Minevich, Minsk, Byelarus
Low Temperature Epitaxial Growth by MBE on Hydrogen PlasmaCleaned Silicon Wafers 65J. Ramm, E. Beck, Balzers, Liechtenstein; H. R. Deller, Zurich, Switzerland;A. Dommann, Buchs, Switzerland; D. Kriiger, Frankfurt(Oder), Germany
Study and Elaboration of Boron Nitride Films by Reactive IonPlating 69/. Grenier, S. Malhouitre, A. Bessaudou, J. Machet, Limoges, France
Multi-component Hard Thin Films Deposited by Hollow Cathode Arc (HCA)Discharge Evaporator 73D. Schulze, R. Wilberg, Dresden, Germany
Spectroscopic Investigation of Plasma Processes in PVD and Arc 77T. Witke, A. Lenk, Dresden, Germany
Short-Time Investigation of Laser and Arc Assisted DepositionProcesses . 81P. Siemroth, Th. Schulke, T. Witke, B. Schultrich, Dresden, Germany
Laser Assisted Electron Beam Evaporation (LEBE) for Optical Applications 85P. Thomsen-Schmidt, D. Schafer, Berlin, Germany;H. Johansen, T. Martini, Halle (Saale), Germany;G. Pfeifer, G. Reifie, Mittweida, Germany
Microstructural Properties of Laser Deposited Oxide Films 89G. Reifie, B. Keiper, S. Weiflmantel, Mittweida, Germany;H. Johansen, T. Martini, R. Scholz, Halle(Saale), Germany
The Thickness Dependence of the Resistivity of Thin Pd FilmsDeposited on Si(l 11) 93H. Hloch, P. WiJSmann, Erlangen, Germany
The PVD Metallization of Plastic Material: Influence of InterfaceStructure on Film Properties 97H. Kupfer, G. Hecht, Chemnitz, Germany
Preparation of Si Wafer Surface with VUV Light Assistance 1025. D. Dushenkov, K. A. Valiev, L. V. Velikov, Moscow, Russia
Resistance to Corrosion of Composite Layers Produced by Ionic Treatments 105A. Michalski, T. Wierzchon, D. Krupa, Warsaw, Poland
Growth of ZnSe on GaAs(llO) and (100) Monitored in situ byRaman Spectroscopy 109D. Drews, M. Langer, W. Richter, Berlin, Germany;D. R. T. Zahn, Chemnitz, Germany
A Mobile Transfer System for Surface Analytical Applications 113J.-M. Abels, D. Hecht, H.-H. Strehblow, Dusseldorf, Germany;U. Kunzelmann, Dresden, Germany
High Resolution Transmission Electron Microscopy of StrainedInAs Layers Grown on (100) GaAs Substrate by "Virtual Surfactant"Molecular Beam Epitaxy 117A. Trampert, Stuttgart, Germany; E. Tournie, Valbonne, France;K. H. Ploog, Berlin, Germany
Ion Assisted Deposition of Low Stress Hard Coatings Using UnbalancedMagnetron Sputtering Technique 121S. Miinsterer, K. Kohlhof, Stuttgart, Germany
Plasma Processing by Use of Electrons Generated by Vacuum Arcs 127J. Vetter, Bergisch Gladbach, Germany
Reactive DC Magnetron Sputtering of Elemental Targets in Ar/CyMixtures:Relation Between the Discharge Characteristics and the Heat of Formationof the Corresponding Oxides 131K. Ellmer, Berlin, Germany; R. Mientus, Berlin, Germany
Behaviour of Random Cathodic Arcs on Ti-Targets in Dependence on ElectricalPower Parameters 135H. Mecke, M. Ellrodt, Magdeburg, Germany
Preparation of Diamond-Like Films by Laser-Controlled Arc Deposition(LASER-ARC) 139H.-J. Scheibe, D. Drescher, Dresden, Germany
Elektrochemical and Mechanical Behaviour of Carbon Materials Prepared byIon Assisted Evaporation 143J. Ullmann, Chemnitz, German; H. Stopka, G. K. Wolf, Heidelberg, Germany
Influence of Wafer Preclean before Selective Tungsten CVD on SurfaceProperties of Interconnect and Intermetal Dielectric Materials 148S. E. Schulz, B. Hintze, W. Griinewald, A. Hofinann, Chemnitz, Germany
PACVD of TiN in an Industrial Plant 153D. Heim, Wels, Austria
Detection of Concentration Profiles During PACVD in an Industrial Reactor 157O. Morlok, G. Kampschulte, P. Markschlager, Stuttgart, Germany
Formation of Composite Layers on Tool Steel by PACVD Methods 162J. Michalski, Warsaw, Poland
Cold Remote Nitrogen Plasma: A New Trend for Thin Film Deposition 167F. Callebert, C. Jama, P. Goudmand, O. Dessaux, Villeneuve D'Ascq, France
Synthesis and Characterization of Zinc Thin Films Obtained by a ColdRemote Plasma 171B. Mutel, A. Ben Taleb, O. Dessaux, P. Goudmand, L. Gengembre,J. Grimblot, Villeneuve d'Ascq, France
Nickel Films Deposition by Cold Remote Nitrogen Plasma onAcrylonitrile-Butadiene-Styrene (ABS) 175A. Brocherieux, O. Dessaux, P. Goudmand, L. Gengembre, J. Grimblot,Villeneuve d'Ascq, France
Growth of Cu Thin Films by Photo-Assisted Metal Organic ChemicalVapor Deposition: Influence of Hydrogen 179R. Moes, Eindhoven, The Netherlands;M. Karsi, R. Morancho, F. Maury, Toulouse, France
Characterization of the Plasma Enhanced CVD Process UsingOptical Emission Spectroscopy 183R. Pintaske, S. Peter, J. Lang, G. Hecht, F. Richter, Chemnitz, Germany
Determination of Ion Energy Distribution in Glow Discharges 187S. Peter, R. Pintaske, B. Reinhold, F. Richter, G. Hecht, Chemnitz, Germany
Deposition of Si-C-N Films by Metalorganic Plasma CVD 191S. Peter, R. Pintaske, F. Richter, G. Hecht, Chemnitz, Germany
Properties of Surface Layers Produced from Organic Compounds underGlow-Discharge Conditions 195T. Wierzchori, J. R. Sobiecki, K. Kuzydlowski, Warsaw, Poland
Formation of Surface Layers from Gaseous Phase with Participation ofChemical Reaction: The Role of Plasma in the Deposition Process 199J. Michalski, Warsaw, Poland
Formation of Surface Layers from Gaseous Phase with Participation ofChemical Reaction: The Role of Substrate in the Deposition Process 203J. Michalski, Warsaw, Poland
Laser CVD on Carbon Fibres: Structure of Layers and TensileStrength of Fibres 208V. Hopfe, R. Jackel, Dresden, Germany;A. Tehel, S. Bohm, A. Schulze, Chemnitz, Germany
Nucleation, Growth and Modification of Polycristalline Diamond FilmsPrepared by HCAP CVD 212S. Laufer, J. Ullmann, A. Weber, J. Stiegler, G. Schaarschmidt,Chemnitz, Germany
The New Technology for Fabrication of the Composition Targets,Used for Magnetron Sputtering of Coatings, Based on the Self-PropagatingHigh-Temperature Syntesis (SHS). Structure and Properties of Thin Films 217E. A. Levashov, I. P. Borovinskaya, V. I. Kosyanin, Y. V. Bogatov,Moscow, Russia
Equipment for Ion Beam and UV-Light Assisted Deposition 220M. Rockelein, B. Rauschenbach, Augsburg, Germany
High Energy Ion Beam Activated Deposition 224S. Tamulevicius, A. Galdikas, L. Pranevicius, Kaunas, Lithuania
Microstructure of Amorphous Sputtered SiNx-Coatings. Comparisionof Computer Simulation and Experiment 230A. Zosch, W. Wuttke, Zwickau, Germany
Computer Simulation of Rarefied Gas Flow 234F. Taziukov, P. Osipov, A. Burmistrov, M. Fomina, Kazan, Russia
Ion-Assisted PVD Hard and Anti-Wear Composite Films of TiN andTiC with i-C 238X. Van, Chemnitz, Germany;J.-H. Erler, Mittweida, Germany
TiN and TiC Coatings by Ion-Assisted Reactive Sputtering 242X. Yan, Chemnitz, Germany;J.-H. Erler, Mittweida, Germany
Effect of Evaporation on the Morphology of Beaded Thin Films 246Y. S. Kaganovskii, S. P. Yurchenko, Kharkov, UkraineD. L. Beke, Debrecen, Hungary
Preparation, Characterisation and Wear Behaviour of PECVD-TiNx- and(Ti,Si)Nx-Coated Cermets . 250/. Endler, E. Wolf, A. Leonhardt, Dresden, Germany;A. Beger, V. Richter, Dresden, Germany
Deposition of Aluminium or Boron Containing Films UsingOrganometallic Precursor 255Ch. Taschner, A. Leonhardt, Dresden, Germany;U. Dumichen, Merseburg, Germany
Diamond Films CVD in Methane/Air Induction Plasma Jet 259A. S. Trukhanov, N. G. Bykova, Yu. K. Ruliev, M. I. YakushinMoscow, Russia
Microwave Plasma Enhanced Low Pressure Sputtering of Copper Films 263J. Musil, M. Misina, Prague, Czech Republic
Effects of Multiaxial Substrate Rotation in Industrial PVD-Processes , 267B. Rother, H. A. Jehn, Schwabisch Gmund, Germany;G. Ebersbach, Chemnitz, Germany
II. Structural and Elemental Analysis / Layer Properties
Amorphous and Nanodispersed Thin Films - Transport Properties andApplications 273A. Heinrich, Dresden, Germany
Giant Magnetoresistance in Layered and Granular Thin Films 279J. C. S. Kools, R. Coehoorn, J. P. W. B. Duchateau, Eindhoven,The Netherlands; Th. G. S. M. Rijks, Eindhoven, The Netherlands;/. Gideonse, Groningen, The Netherlands
High Resolution Auger Depth Profile Analysis of Deeply BuriedInterfaces 285A. Barna, M. Menyhard, Budapest, Hungary
Complex XRD Study of Inhomogeneous Microstructure in Hard Coatings 291R. Kuzel, jr., Praha, Czech Republic
Texture and Stress Analysis of Sputtered Thin Films 297J. J. Bacmann, Grenoble, France;P. Gergaud, Paris, France
Layer Characterisation with Linear-Optical Methods 303T. Zettler, Berlin, Germany
Residual Stress in Ni an C Monolayers and Multilayers Producedby Pulsed Laser Deposition 312N. Kallis, H. Mai, Dresden, Germany
Superconductivity and Critical Fields in Amorphous Tungsten/SiliconMultilayers 316E. Majkova, S. Luby, M. Jergel, Bratislava, Slovakia;H. v. Lohneysen, C. Strunk, Karlsruhe, Germany;B. George, Vandoeuvre-les-Nancy, France; P. Lobotka, Bratislava, Slovakia
Optical Properties of Laser Pulse Deposited Oxide Films 320G. Reifie, S. Weifimantel, B. Keiper, Mittweida, Germany
Photosensitivity of MIM-Type Devices Based on a-SiC:H 324R. Vincenzoni, G. Leo, F. Galluzzi, Rome, Italy
Muon Spin Research of Thin Films and Surfaces 329F. Kottmann, D. Maden, M. Meyberg, E. Morenzoni,Th. Wutzke, U. Zimmermann, Villigen, Suisse;B. Matthias, Th. Prokscha, Heidelberg, Germany
Hydrogen Films at Low Temperatures 333P. P. Lutsishin, O. A. Panchenko, S. V. Sologub, V. F. Shpagin,Kiev, Ukraine
STM Investigations of Diamond and DLC Films 337A. A. Gorbunov, Dresden, Germany; S. M. Pimenov, A. A. Smolin,Moscow, Russia; H.-J. Scheibe, D. Drescher, Dresden, Germany
An X-Ray Detector Based on a-Si:H/Transition Metal Bilayer Systems 341A. N. Panckow, H. Wine, T. Oleynik, Magdeburg, Germany
Electrical in situ Characterisation of Cubic CdS Grown on InP(llO) 345C. Schultz, Berlin, Germany; M. von der Emde, D. R. T. Zahn,Chemnitz, Germany
Laterally Resolved Ellipsometric Investigations of Oxide LayersManufactured by Laser-Assisted Electron Beam Evaporation 349H. Schwiecker, Berlin, Germany; R. Wolf, U. Schneider, J. Zilian,Berlin, Germany; P. Tliomsen-Schmidt, D. Schcifer, Berlin, Germany
Modification of Laser-Arc DLC Layers by Ion Beams 353A. Kolitsch, Dresden-Rossendorf, Germany;H.-J. Scheibe, D. Drescher, Dresden, Germany
Correlations Between Structural and Optical Properties ofAmorphous Selenium Films 357H. Wine, H. Freistedt, J. Biasing, H. Giesler, Magdeburg, Germany
Magneto-optic Display Material with High Faraday-Rotation and LowCoercive Force 361T. Kessler, H. Baumann, K. Bethge, J. Reinmann, K. Friedrich, R. Omet,Frankfurt(Main), Germany
Optical Properties of Coated CaF2 365S. Lanx, W. Richter, B. Schroter, T. Glaschke, Jena, Germany
Condensation Model of Dislocations Origination in EpitaxialFerrospinel Surface Layers 369L. N. Aleksandrov, Novosibirsk, Russia;L. A. Mitlina, E. I. Dorodnov, V. N. Kostilov, T. V. Yankovskaya,Samara, Russia
Magnetic Field Dependence of Hall Coefficient in Short-PeriodPbTe/SnTe Superlattices 373V. Litvinov, Chernovtsy, Ukraine; M. Oszwaldowski, T. Berus, Poznari,Poland; O. Mironov, Kharkov, Ukraine
Influence of Surface Defects on Porous Silicon Luminescence 49077?. Dittrich, H. Flietner, Berlin, Germany;V. Yu. Timoshenko, P. K. Kashkarov, Moscow, Russia
Absorption and Secondary Radiation in Tetrahedral Carbon Films 494V. E. Mashchenko, Moscow, Russia;V. M. Puzikov, A. V. Semenov, Kharkov, Ukraine
TiN/(Cr,Co)N Coatings Crystallized from Pulse Plasma 498A. Michalski, Warsaw, Poland
Mechanical Properties of Amorphous Thin Films 501P. Nemec, V. Navratil, P. Slddek, Brno, Czech RepublicP. Roca i Cabarrocas, Palaiseau, France
The Influence of Interface Roughness on the Giant Magnetoresistanceof Co/Cu Multilayer Films 505C. Dorner, H. Haidl, H. Hoffmann, Regensburg, Germany
Photo-Simulated Changes in Thin As-Ge-S Films Determinedby Raman Spectroscopy 509K. Petkov, B. Dinev, Sofia, Bulgaria; V. Boychev, Sofia, Bulgaria
Optical and Photoelectrical Properties of ^ic-Si Layers in Dependenceon Structural Ordering and Defect Passivation 513R. Krankenhagen, H. Schmidt, W. Henrion, I. Sieber, B. Selle, H. Flietner,Berlin, Germany
Interface Defects at Si/SiO2-Inerfaces and Their Relation to GrowthProcesses and Dynamic Effects 518H. Angermann, Th. Dittrich, K. Kliefoth, H. Flietner, Berlin, Germany
III. New Applications of Thin Films
PVD and PECVD Coatings for Packaging Applications 524M. Benmalek, Voreppe, France
Cleaning and Interface Control in IC Process Technology 531J. Mulder, Bilthoven, The Netherlands
Ultrathin SiO2- and A12O3- Films as Selective Component for Gas Sensors 537J. Goschnick, P. Althainz, A. Dahlke, M. Frietsch-Klarhof, H. J. Ache,Karlsruhe, Germany
Stability of Mo/Cu Interfaces Under Thermal Processing 541S. Luby, E. Majkova, M. Jergel, Bratislava, Slovakia;M. Brunei, Grenoble, France; G. Leggieri, A. Luches, Lecce, Italy
Laser-Damage Resistant Multilayer Coatings on Polycarbonate Substrates 545G. Hubrach, K.-J. Becker, Bamberg, Germany;E. Hacker, H. Bernitzki, H. Lauth, Jena, Germany
Preparation and Properties of Transparent Protective Layers Produced byVacuum Technologies 550G. Leonhardt, U. Ehrlich, M. Falz, B. Biicken, R. Wilberg, Dresden, Germany
Hollow Cathode Arc Plasma Pre-Treatment and Vaccum Arc Coating -A New Combination of Processes 556D. Schulze, R. Wilberg, Dresden, Germany
Thin Film on ASIC (TFA)-Color Sensors - New Applications of OpticalThin Film Detector 560J. Giehl, H. Stiebig, P. Rieve, M. Bohm, Siegen, Germany
Lift Off Patterning of Thin Film Structures 564C. Wenzel, N. Urbansky, D. Burmeister, Dresden, Germany
Implantation Through Metal as Suitable Technique for Formation ofShallow p+n Junctions 568I. Besse, L. Hrubcin, Bratislava, Slovakia;R. Senderdk, Bratislava, Slovakia; A. P. Kobzev, Dubna, Russia
Assessement of the Technological Capacity of High Speed Steel (HSS)Cutting Tools Coated with Hard Materials Using the Complex Tools Diagnosis 572K. Kttnanz, U. Longer, Dresden, Germany
Material Selection for Thin Film Thermocouples Operating at ExtremelyHigh Temperatures 576K. Bewilogua, H. Hubsch, R. Bethge, P. Willich, Hamburg, Germany;M. Dieckmann, Noordvijk, The Netherlands;J.-P. Bugeat, Moissy Cramayel, France
Comparison of Implantation Techniques for Formation of Shallowp+n Junctions 580I. Besse, L. Hrubcin, Bratislava, Slovakia; J. Hlavkd, Brno, Czech Republic;M. Babinsky, Bratislava, Slovakia
The Influence of Geometry on the Sensitivity of Semiconductors 584Thermal Vacuum SensorsV. Dubravcovd, O. Csabay, Bratislava, Slovakia
Comparative Investigation of the Wear Behaviour of TiN MonolayerCoatings, Ti(C,N) Multicomponent Coatings and TiC/Ti(C,N)/TiNMultilayer Coatings Deposited by the Vacuum Arc Method 587J. Walkowicz, J. Smolik, K. Miernik, J. Bujak, Radom, Poland
Anodic Arc Evaporation: Application to Web-Coating 591W. Siefert, Herbolzheim, Germany
Electrophysical Properties and Device Applications of the SiC Thin Films 594A. A. Lebedev, M. M. Anikin, M. G. Rastegaeva, N. S. Savkina,A. M. Strelchuk, V. E. Chelnokov, A. St. Petersburg, Russia
IV. Formation of Layer Structure
Modification of Growth Modes in Lattice-Mismatched Epitaxial Systems: Si/Ge 600H.-J. Osten, Frankfurt(Oder), Germany
Controlling Polysilicon Sensor Characteristics by Current Trimming 606V. A. Gridtchin, S. Sputai, Novosibirsk, Russia
Plasma and Surface Modeling for the Deposition of HydrogenatedCarbon Films 611W. Mdller, Dresden-Rossendorf, Germany
Diffusion of Nitrogen in the Ti-N System - Formation of Intermediate Phases 614W. Lengauer, Vienna, Austria
Thermal Ageing of Ni/C Multilayers Produced by Pulsed Laser Deposition 620R. Krawietz, B. Wehner, Dresden, Germany; N. Kallis, R. Dietsch, H. Mai,Dresden, Germany
Interface Stability and Silizide Formation in High Temperature StableMoxSiy/Si Multilayer Soft X-Ray Mirrors Studied by Means of X-RayDiffraction and TEM 624U. Kleineberg, H. J. Stock, A. Kloidt, B. Schmiedeskamp, U. Heinzmann,Bielefeld, Germany; 5. Hopfe, R. Scholz, Halle(Saale), Germany
Physical and Electronic Properties of Thin Siliconoxynitride LayersPrepared by Rapid Thermal Processing 628R. Beyer, H. Burghardt, G. Prosch, E. Thomas, R. Reich,Chemnitz, Germany; D. Grambole, F. Herrmann, Dresden-Rossendorf, Germany;G. Weidner, Frankfurt(Oder); H. Syhre, K. Dittmar, Dresden, Germany
Ion Kinetics in RF-Plasmas for Surface Modification of Polymers 632M. Zeuner, J. Meichsner, Chemnitz, Germany
Interdiffusion in r-Component (r>2) Alloys; the Mathematical Modelfor Thin Films 636M. Danielewski, R. Filipek, Cracow, Poland;K. Holly, W. KrzyiaAski, Cracow, Poland
Deposition of Glass-Ceramic Layers from a Beam of Particles Acceleratedby a High-Voltage Electric Field 640A. Olszyna, I. Zacharenko, Warsaw, Poland
Effect of Rapid Cooling and Heating on the Plasma-Enhanced Crystallizationof Layers of High-Melting Materials from Gaseous Phase 645A. Olszyna, A. Michalski, K. Zdunek, A. Sokolowska, Warsaw, Poland
Characterization and Radiation Grafted PVDF and P(VDF/TrFE) Films 650E. Petersohn, N. Betz, A. Le Moel, Gif-sur-Yvette, France
Thin Film Nanoprocessing by Laser/STM Combination 654A. A. Gorbunov, W. Pompe, Dresden, Germany
Formation and Properties of Borided Layers on Steel Under GlowDischarge Condititons 658T. Wierzchon, P. Bieliiiski, D. Krupa, Warsaw, Poland
A12O3 Films Formed by Anodic Oxidation of Al-lwt%Si-0.5wt%Cu Films 662S. Chiu, P.-H. Chang, C.-H. Tung, Hsinchu, Taiwan
X-Ray Diffraction Analysis of RTP-Annealed Thin ZnO Films 666O. Nennewitz, J. Schawohl, L. Spiefi, Ilmenau, Germany;H. Schmidt, J. Pezoldt, T. Stauden, Ilmenau, Germany
Corrosion Resistance of Chromized Layers Produced by the VacuumTechnique on Low-Carbon Steel 670E. Kasprzycka, K. Pietrzak, J. Tacikowski, Warsaw, Poland
Infrared Spectroscopy of Plasma Modification Effects in Thin Polymer Films 674M. Nitschke, J. Meichsner, Chemnitz, Germany
Structure and Morphology of Chromium Diffusion Layers Made onLow-Carbon Steel in the Process of Vacuum Chromizing 678E. Kasprzycka, J. Tacikowski, Warsaw, Poland
Ellipsometric Study of Thin Polymer Films Modified in Low Pressure Plasma 682R. Rochotzki, M. Arzt, Chemnitz, Germany
Laser Induced Structural Modification of Excimer Laser AblatedCarbon Films 686B. Keiper, S. Weifimantel, G. Reifie, Mittweida, Germany;S. Schulze, Chemnitz, Germany
Graphitisation of Amorphous Carbon C:H Films under Irradiation andThermal Treatment 690A. P. Rubshtein, I. S. Trakhtenberg, Ekaterinburg, Russia
Single MeC or Composite MeC/Me(C,N)/MeN Coatings on High SpeedSteels by Means of an Indirect Method 694B. Wendler, Lodz, Poland
Buffer Layer for Growing /3-SiC on Si 698J. Stoemenos, Thessaloniki, Greece;B. Pecz, P. B. Barna, Budapest, Hungary
The Conversation of Momentum and Energy in Open Systems, DiffusionalApproach to the Mass Transport in Solids 702M. Danielewski, Cracow, Poland
The Al-Fe and Al-N Phase Formation on the a-Fe Surface by theIon-Beam Mixing and Subsequent N+ Ion Implantation 706/. G. Murzin, L. P. Choupiatova, I. A. Komarovsky, E. I. Kolosova,A. P. Kuprin, Moscow, Russia
Polycrystalline Indium Silicide Film-Structure, Electrical andOptical Properties 710J. Schumann, D. Elefant, C. Gladun, A. Heinrich, Dresden, Germany;H. Lange, W. Henrion, Berlin, Germany
High Temperature X-Ray Diffraction Studies of the Phase FormationProcess in Thin IrxSi,.x films 714W. Pitschke, A. Heinrich, J. Schumann, Dresden, Germany
The Formation of Agl in (100), (110) and (111) Ag FilmsG. Sajfdn, O. Geszti, G. Radnoczi, P. B. Barna, Budapest, Hungary;K. Toth, Budapest, Hungary
Analysis of Diffusion-Limited Growth Al-Mn Quasicrystal Layers by HighTemperature Sequential Deposition 722G. Zsigmond, P. B. Barna, Budapest, Hungary;F. Raschewski, K. Urban, Jiilich, Germany; A. Csanddy, Budapest, Hungary
Correlation between Texture and Morphology of Polycrystalline Films 726M. Adamik, P. B. Barna, Budapest, Hungary;/. Tomov, Sofia, Bulgaria
Mechanisms of Low Temperature Silicid Creation 730A. E. Kiv, V. V. Kovalchuk, E. P. Britavskaya, Odessa, Ukraine