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Thermal diffusivity, conductivity and expansion of
Yb3xY3(12x)Al5O12 (x ¼ 0:05; 0.1 and 0.25) single crystals
Xiaodong Xu*, Zhiwei Zhao, Jun Xu, Peizhen Deng
Crystal Center, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800,
People’s Republic of China
Received 8 February 2004; accepted 4 March 2004 by P. Wachter
Abstract
Yb:YAG single crystals were grown by the Czochralski method. Thermal properties like thermal diffusivity, conductivity
and expansion of various Yb3þ concentration are studied from 50 to 500 8C. The effects of temperature and Yb3þ concentration
on the thermal properties of Yb:YAG crystals are discussed. The deterioration of thermal properties of highly doped Yb:YAG is
possibly due to the structural distortion caused by the Yb3þ ions.
q 2004 Elsevier Ltd. All rights reserved.
PACS: 42.70.Hj; 67.80.Gb
Keywords: B. Crystal growth; D. Heat capacity; D. Heat conduction; D. Thermal expansion
1. Introduction
Yttrium aluminum garnet (YAG) is an excellent host
material and possesses many qualities that are desirable for
high-average-power laser applications because of its high
thermal conductivity and excellent physical and chemical
properties [1–4]. As a rare-earth ion with the simplest
energy-level construction, Yb3þ has some important
advantages, such as few quantum defects (8.6%) between
the pump and the laser photons, which result in low thermal
loading (fractional heating of less than 11%); a long
radiative lifetime of the upper laser level (1.3 ms); and no
excited-state absorption or upconversion loss compared
with other rare-earth ions [5–7]. Because of its strong and
broad absorption band near 941 nm, which is matched by
the emission wavelength of InGaAs laser diodes Yb3þ-
doped YAG used as gain for high efficiency, high power
diode-pumped solid-state lasers has attracted great attention
following the development of highly efficient InGaAs laser
diodes [8]. Previously, pulsed, cw, Q-switched, passively
model-locked femtosecond and multiwatt laser action was
achieved in laser-diode-pumped Yb:YAG systems. The
highest cw output power was 2.65 kW, with an optical-to-
optical efficiency of 28% in a sidepumped rod Yb:YAG
scheme [9].
The thermal diffusivity, conductivity and expansion are
three important parameters for the assessment of a laser
crystal. Knowledge of the thermal properties of Yb:YAG
crystals with different concentration at different temperature
is essential to selection of the proper material for the use in
laser systems. In this paper we report experimental
measurements of the thermal properties for several Yb3þ
concentration of Yb:YAG over a temperature range from 50
to 500 8C. The effect of Yb3þ concentration and temperature
on these parameters is discussed.
2. Experiments
Yb:YAG crystals with dopant concentration of 5, 10, and
25 at.% Yb3þ were grown by the Czochralski method. The
99.999%-pure raw materials were appropriately predried
and weighed according to a specific molar ratio. After the
compounds were ground and mixed, they were pressed into
0038-1098/$ - see front matter q 2004 Elsevier Ltd. All rights reserved.
doi:10.1016/j.ssc.2004.03.007
Solid State Communications 130 (2004) 529–532
www.elsevier.com/locate/ssc
* Corresponding author. Tel.: þ86-21-699-18482; fax: þ86-21-
599-28755.
E-mail address: [email protected] (Z. Zhao).
pieces and put into an aluminum crucible. The pieces were
heated to 1350 8C for 24 h. The charge was then loaded into
an iridium crucible for crystal growth. During the growth the
pulling rate was 1 mm/h, the rotation rate was 10–20 rpm,
and the growth atmosphere was nitrogen. The initial growth
boundary in solid melt was convex toward the melt, so
dislocations and impurities were reduced or eliminated from
the crystal. After that, the growth boundary became flat. To
prevent the crystal from cracking, we cooled it slowly to
room temperature after growth. All crystals had a blue–
green coloration, which could be removed by annealing of
the samples in air at 1600 8C for 36 h.
The samples for thermal measurements were cut form
the air-annealed crystals. Thermal diffusivity was measured
by pulsed laser technique with a Xe lamp pumped Nd:Glass
laser, The sample dimensions were F 10.3 £ 2 mm3. The
specific heat was measured by the method of differential
scanning calorimeter (DSC) equipment (Model
DSC404/6/F). We used a thermal-expansion analyzer
(Model DIL 402PC) to measure the thermal expansion of
the Yb:YAG crystals. The samples for thermal-expansion
measurement were oriented wafers and their dimensions
were 50 mm £ 5 mm £ 5 mm. We measured the densities of
these crystals by using a drainage method.
3. Results and discussion
The variations in temperature of the thermal diffusivity
of Yb:YAG crystals are reported in Fig. 1. The thermal
diffusivity decreases as the temperature increases, and its
reduction occurs more slowly at high temperature. The
thermal diffusivity for 5 at.% Yb:YAG at 50 8C is
1.72 £ 1026 m2/s, and it is reduced as much as 38% to
1.06 £ 1026 m2/s at 500 8C. From Fig. 1 we can also see the
apparent influence of the Yb3þ doping concentration on the
thermal diffusivity. The thermal diffusivity decreases with
increasing Yb3þ concentration, and values of thermal
diffusivity at 50 8C are 1.72 £ 1026, 1.62 £ 1026, and
1.54 £ 1026 m2/s for single crystals with doping level 5,
10, and 25 at.%, respectively.
Fig. 2 presents the dependence of the specific heat of
Yb:YAG crystals on the temperature. From the figure we
can see that the specific heat increases as the temperature
increases in the measuring range. The Yb3þ doping
concentration leads to a change of specific heat within the
experiment temperature. The specific heat of Yb:YAG
crystal decreases with the increase of Yb3þ concentration in
the range from 50 to 300 8C. When the temperature exceeds
300 8C, the specific heat of highly doped Yb:YAG crystal is
higher than that of Yb:YAG crystal with low doping level; at
the same time, the specific heat of highly doped Yb:YAG
crystal increases more quickly than that of Yb:YAG crystal
with low doping level in the measuring range temperature
from 50 to 500 8C. The results show that the variety of
temperature has great influence on highly doped Yb:YAG
crystals.
The thermal conductivity was calculated according to:
K ¼ arCp ð1Þ
where a is the thermal diffusivity, r is the density and Cp is
the specific heat capacity. Fig. 3 shows the density of
Yb:YAG crystals as a function of Yb3þ concentration. The
density increases with the increase of Yb3þ concentration,
and the density is a linear function of Yb3þ concentration.
The thermal conductivity of Yb:YAG crystals at different
temperature calculated using Eq. (1) are displayed in Fig. 4,
and we can see the apparent influence of Yb3þ doping
concentration on the thermal conductivity. At 50 8C while
the doping concentration of Yb3þ ions increases from 5 to
25 at.%, the thermal conductivity decreases by as much as
11%, from 5.23 to 4.64 W/m k. From Fig. 4, we can also see
that with the increase of temperature thermal conductivity
decreases. In Yb:YAG crystals, the main mechanism of heat
Fig. 1. Thermal diffusivity of Yb:YAG crystals as a function of
temperature for several Yb3þ doping concentrations.
Fig. 2. Specific heat of Yb:YAG crystals as a function of
temperature for several Yb3þ doping concentrations.
X. Xu et al. / Solid State Communications 130 (2004) 529–532530
transfer is the heat transfer by phonon. Yb3þ doping into
YAG crystals inevitably induces structural distortion in
crystals. The defects in crystals remarkably reduce phonon
mean free path and the thermal conductivity decreases as
Yb3þ doping concentration increases. The deterioration of
thermal properties of highly doped Yb:YAG will more
easily lead to thermooptic aberrations, lensing and birefrin-
gence. Therefore, in order to acquire high-beam quality and
stable laser output from highly doped Yb:YAG media,
efficient cooling system must be adopted.
For an isotropic cubical crystal Yb:YAG, there is only
one independent principal thermal expansion component. It
can be obtained by measurement of the thermal expansion of
the k111l oriented samples. The experimental data we got
were the thermal expansion length with the increase of
temperature from room temperature. Fig. 5 shows the linear
thermal expansion coefficients calculated from room
temperature to several other temperatures. The coefficients
increase more quickly before 300 8C, whereas they change
slowly at the range from 300 to 500 8C, which causes the
crystals to crack more easily at low temperature when the
crystals are cooled to room temperature after growth. From
Fig. 5, we can also see that the apparent influence of the
Yb3þ doping concentration on the thermal expansion. The
thermal expansion coefficient of Yb:YAG increases with the
increase of Yb3þ concentration, and the coefficients from
room temperature to 500 8C are 8.06 £ 1026, 8.18 £ 1026
and 8.31 £ 1026 K21 for single crystals with doping level 5,
10 and 25 at.%. This increase is possibly due to the
structural distortion caused by the Yb3þ ions.
4. Conclusion
Yb3xY3(12x)Al5O12 (x ¼ 0:05; 0.1 and 0.25) single
crystals were grown by the Czochralski method. Thermal
diffusivity, thermal conductivity and thermal expansion of
various Yb3þ concentration are studied from 50 to 500 8C.
Thermal diffusivity and thermal conductivity decrease with
the increase of temperature and Yb3þ doping concentration,
and thermal expansion coefficient increases with the
increase of temperature and Yb3þ doping concentration.
The deterioration of thermal properties of highly doped
Yb:YAG is possibly due to the structural distortion caused
by the Yb3þ ions.
Acknowledgements
This work is supported by the High Technology and
Development Project of the People’s Republic of China
(Grant No. 2002AA311030)
Fig. 3. Density of Yb:YAG crystals as a function of Yb3þ
concentration.
Fig. 4. Thermal conductivity of Yb:YAG crystals as a function of
temperature for several Yb3þ doping concentrations.
Fig. 5. Thermal expansion coefficient of Yb:YAG crystals as a
function of temperature for several Yb3þ doping concentrations.
X. Xu et al. / Solid State Communications 130 (2004) 529–532 531
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