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The Study of Plasma-Enhanced Silicon NitrideDeposition Using SiH4/NH3/N2 Mixture
Ladthai Thaiyotin
Sompong Charoenkit, Win Bunjongpru, Charndet Hruanan and Itti Rittaporn
Thai Microelectronic Center (TMEC)
National Electronics and Computor Technology Center (NECTEC)
Out line
- Introduction
- Experiment
- Result
- Conclusion
IntroductionPlasma Enhanced Chemical Vapor Deposition (PECVD)
- IC and MEMs Passivation Layer
Low processing temperature, Good step coverage, good passivationfor both moisture and sodium ions.
- Process Gas
SiH4+N2 ----> Less controllable
SiH4+NH3 ----> More Hydrogen content
SiH4 + NH3 + N2The Study of Plasma-Enhanced Silicon NitrideDeposition Using SiH4/NH3/N2 Mixture
Experiment
PECVD
Model: P5000 Mark II by AMAT
Figture 1. PECVD picture
Figture 2. PECVD Schematic
Table 1. Deposition parameters
SiH4 150-250NH3 25-100N2 1500-4500
2-5 300-600300-450250-400
Gas flow(sccm)
Total pressure(torr)
Spacing(mils)
RF power(watt)
Subs. temp.( oc )
SiH4+NH3, SiH4+N2, SiH4+NH3+N2
- Etch rate
- Si-N ratio (Refractive index)
- Stress
Comparision:
Substrate temperature (OC)
800
850
900
950
1000
Substrate temperature (c)
Dep
ositi
on ra
te (n
m/m
in)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Uni
form
ity (%
)
250 300 350 400
Dep. rate
Unif.
500
600
700
800
900
1000
1100
300 350 400 450RF power (watts)
Dep
ositi
on ra
te (n
m/m
in)
0.75
0.80
0.85
0.90
0.95
1.00U
nifo
rmity
(%)
Dep. rate
Unif.
RF Power (watt)
Results
-500-450-400-350-300-250-200-150-100-50
0
Substrate temperature (C)
Stre
ss (M
Pa)
1.7
1.8
1.9
2.0
2.1
2.2
2.3
Ref
ract
ive
inde
x
250 300 350 400
Index
Stress
Tensile
-400
-300
-200
0
100
200
300
RF power (watts)
Stre
ss (M
Pa)
2.0
2.1
2.2
2.3
2.4
2.5
Ref
ract
ive
inde
x
300 350 400 450
-100 Index
Stress
Tensile
930
935
940
945
950
955
960
300 400 500 600Spacing (mils)
Dep
ositi
on ra
te (n
m/m
in)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Uni
form
ity (%
)Dep. rate
Unif.
Spacing (mils)
Total pressure (torr)
700
750
800
850
900
950
1000
Total pressure (torr)
Dep
ositi
on ra
te (n
m/m
in)
00.5
1.01.52.0
2 .53.03.5
4.04.5
Uni
form
ity (%
)
2 3 4 5
Dep. rate
Unif.
-200
-150
-100
-
0
50
100
300 400 500 600Spacing (mils)
Stre
ss (M
Pa)
Ref
ract
ive
inde
x
-50
2.00
2.05
2.10
2.15
2.20
2.25.
2.30
Index
Stress
Tensile
-450-400-350-300-250-200-150-100-50
0
2 3 4 5Total pressure (torr)
Stre
ss (M
Pa)
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
Inde
x
Index
Stress
Compressive
910
920
930
940
950
960
970
980
990D
epos
ition
rate
(nm
/min
)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Uni
form
ity (%
)
100 150 200 250SiH4 (sccm)
Unif.
Dep. rate
SiH4 (sccm)
500
600
700
800
900
1000
1100
Dep
ositi
on ra
te (n
m/m
in)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Uni
form
ity (%
)
NH3 (sccm)25 50 75 100
Dep. rate
Unif.
NH3 (sccm)
-500
-300
-100
100
300
500
25 50 75 100
Stre
ss (M
pa)
2.0
2.1
2.2
2.3
2.4
2.5
Ref
ract
ive
inde
x
NH3 (sccm)
Tensile
Index
Stress
-250
-200
-150
-100
0
50
100
150
Stre
ss (M
pa)
1.50
1.65
1.85
1.95
2.10
2.25
2.40
2.55
Ref
ract
ive
inde
x
SiH4 (sccm)
-50
100 250200150
tensile
Index
Stress
820
840
860
880
900
920
940
960
Dep
ositi
on ra
te (n
m/m
in)
0
1
2
3
4
5
6
Uni
form
ity (
%)
N2 (sccm)1500 2500 3500 4500
Dep. rate
Unif.
N2 (sccm)
- 300
-200
-100
0
100
200
1500 2500 3500 4500N2 (sccm)
Stre
ss (M
pa)
Ref
ract
ive
inde
x
Compressive
Index
Stress
2. 10
2. 15
2. 20
2. 25
2. 30
Table 1. Silicon nitride trendsummary.
N2 (sccm)
NH3 (sccm)
SiH4 (sccm)
Total pressure (torr)
Spacing (mils)
RF power (watt)
Substrate temp (oC)
Refractive indexCompressive stressUniformityDeposition rateIncrease item
Figture 3. Silicon nitride film
Table 3 Etch rate, Si/N ratio and stress of nitride films depositionusing different gas mixture.
125118236Stress (Mpa)
313747Si/N ratio
320287637Etch rate (nm/min)
SiH4/NH3/N2SiH4/N2SiH4/NH3Gas mixture
PECVD silicon nitride deposition using SiH4+NH3+N2
Good uniformity
- Increase substrate temp, total pressure
- Decrease spacing and RF power
Refractive index (2.0-2.1) obtained by
- Increase RF power, total pressure
Reactive gas ratio
Good uniformity, increase N2
Refractive index (2.0-2.1) obtained by
- increase NH3 and N2
Conclusion
LowLowHighStress (Mpa)
Nitrogen rich(2.0 - 2.2)
Nitrogen rich(index 1.9 - 2.1)
Silicon richSi/N ratio
MiddleLowHigh porocityEtch rate (nm/min)
SiH4/NH3/N2SiH4/N2SiH4/NH3Gas mixture
SiH4+N2 less controllable
SiH4+NH3 High Hidrogen
SiH4+N2+NH3 Optimum