THANKS TO - Stanford University · Erik HEIJNE CERN PH Department SLAC Instrumention Seminar 27 June 2007 30 ... Shift Register Input Ctest Testbit Test Input Maskbit Maskbit 3 bits

1Erik HEIJNE CERN PH Department SLAC Instrumention Seminar 27 June 2007

R&D, DESIGN WORK by the CERN MEDIPIX team

MICHAEL CAMPBELL, team leader

XAVI LLOPARTLUKAS TLUSTOSRAFA BALLABRIGAWINNIE WONG(+ me)

& CERN-MICROELECTRONICS GROUP

8-YEAR R&D EFFORTS by MEDIPIX COLLABORATION

HELP in the BEAM from RYAN FIELD, SUMMER STUDENT NCSU

JOHN IDARRAGA, MONTREAL, DOMINIC GREIFFENBERG, FREIBURG

THANKS TO


MEDIPIX2 PARTNERSMEDIPIX2 PARTNERS- U INFN Cagliari- CEA-LIST Saclay- CERN Genève- U d'Auvergne Clermont- U Erlangen- ESRF Grenoble- U Freiburg- U Glasgow- IFAE Barcelona- Mitthoegskolan- MRC-LMB Cambridge- U INFN Napoli- NIKHEF Amsterdam- U INFN Pisa- FZU CAS Prague- IEAP CTU in Prague- SSL Berkeley

SPOKESMAN Michael CAMPBELL

Deputy Jan VISSCHERS

http://medipix.web.cern.ch/MEDIPIX/

Erik HEIJNE CERN PH Department SLAC Instrumention Seminar 27 June 2007

SPECIAL, THICK FILM 3D, sub SPECIAL, THICK FILM 3D, sub µµm PRECISIONm PRECISION

NUCLEAR EMULSIONNUCLEAR EMULSION

Emulsion Event WA59 ~ 1985

50 µm

CHARM DECAY

SUCCESSIVE IONIZING ENERGY TRANSFERS TO GRAINSMAKE LATENT IMAGE

AgBr

500 µm


120 GeV PIONS120 GeV PIONS

July 2006 Parallel Medipix P-05-0583

DECAY of NEUTRAL K ?

1 mm

INTERACTION in Medipix DETECTORSi 'EMULSION'

500 µm


PROGRESS in Si SENSORSDEPENDS on AVAILABLE

INDUSTRIAL TECHNOLOGY

0-D SINGLE DIODE 19551-D SEGMENTED DIODE mm 1960QUASI 2-D DOUBLE-SIDED STRIPS 1965TRUE 2-D CCD/MOS MATRIX 1971

PIXELS MONO or HYBRID 1989PILLARS '3D' 1998

TRUE 3-D VOXELS next step ?


TRACKERS

VERTEX DETECTORS of choice

SILICON DETECTORS

EARLIEST SYSTEMS in COLLIDERS WHICH USED READOUT CHIPS

UA2 (PADs) CERN AMPLEX chipMARK II MICROSTRIPs SLAC MICROPLEX chip

~ 1989 BEGIN of PIXEL DETECTORS : STANFORD, LBL, CERN


HYBRID HYBRID SiSi PIXEL PIXEL SENSOR 1991SENSOR 1991CERN : CAMPBELL, HEIJNECERN : CAMPBELL, HEIJNE

READOUT ELECTRONICS1 um SACMOS

SiSENSOR MATRIX TRUE 2 - D

BUMPS +


Si TRACKER MODULES ATLAS ~2006Si TRACKER MODULES ATLAS ~2006

BARREL

ENDCAP


ATLAS Si TRACKER : SCT BARREL END 2006ATLAS Si TRACKER : SCT BARREL END 2006


CMS Silicon Tracker

HALF-BARREL

HALF- BARREL


LHC LHC simulatedsimulated EVENT with HIGGS PARTICLE EVENT with HIGGS PARTICLE

HiggsÆZ0Z0Æ m+m- m+m-

Reconstructed tracks with pt > 25 GeV

VERY CLEAR EVENT (THE 4 µ)BUT EXTREMELY RARE

COURTESY

STAN BENTVELSEN


LHC LHC simulatedsimulated EVENT with HIGGS PARTICLE EVENT with HIGGS PARTICLE

HiggsÆZ0Z0Æ m+m- m+m-

Reconstructed tracks with pt > 25 GeV

VERY CLEAR EVENT (THE 4 µ)BUT EXTREMELY RARE

NOT EASY TO FINDTHIS IS HOW IT LOOKS EXPERIMENTALLYALWAYS LARGE BACKROUND


EARLY TRACKING and SILICON DETECTORS

FOCAL POINTS in CONTINUED PIXEL DETECTOR R&D : THIN SENSORS, INTEGRATION of FUNCTIONS, TRIGGERINGRELEVANT INDUSTRIAL DEVELOPMENTS in TECHNOLOGY

Si WAFER STACKING, TRUE 3D DETECTION / RECONSTRUCTION :VECTOR DETECTOR and VOXELS

STUDY of THIN Si SENSORS : HYBRID ASSEMBLY with 55 um SiVECTORS, SUBMICRON PRECISION on TRAJECTORIES

CONCLUSION

OUTLINE


CMOS CHIP DESIGN IN CMOS CHIP DESIGN IN submicronsubmicron TECHNOLOGY TECHNOLOGY

HIGH DENSITY INTERCONNECTSHIGH DENSITY INTERCONNECTS

Si WAFER THINNING & HANDLINGSi WAFER THINNING & HANDLING

3-D STACKING3-D STACKING

MECHANICS & PACKAGINGMECHANICS & PACKAGING

THERMAL MANAGEMENT & COOLINGTHERMAL MANAGEMENT & COOLING

CRITICAL TECHNOLOGIESCRITICAL TECHNOLOGIES


IN CMOS TECHNOLOGY :IN CMOS TECHNOLOGY :

THINNING of FULL Si WAFERS BECOMES PREFERRED overTHINNING of FULL Si WAFERS BECOMES PREFERRED overSELECTIVE ETCHING of THIN AREASSELECTIVE ETCHING of THIN AREAS

200 mm WAFERS THINNED DOWN to < 20 um with 200 mm WAFERS THINNED DOWN to < 20 um with UNIFORMITY < 3 um FOR PATTERNED CMOSUNIFORMITY < 3 um FOR PATTERNED CMOS

300 mm WAFERS < 50um300 mm WAFERS < 50umUSUALLY BACKING SUBSTRATE on FRONT or REARUSUALLY BACKING SUBSTRATE on FRONT or REAR

THIS COULD BE INTRODUCED in DETECTOR TECHNOLOGYTHIS COULD BE INTRODUCED in DETECTOR TECHNOLOGY!!!! $$ $$

THIN Si DETECTORSTHIN Si DETECTORS


ADVANTAGES of THIN Si DETECTORS < 50 ADVANTAGES of THIN Si DETECTORS < 50 µµmm

PRECISION along PARTICLE DIRECTIONPRECISION along PARTICLE DIRECTION

--> IF YOU KNOW WHERE THE DEVICE IS IN 3D SPACE--> IF YOU KNOW WHERE THE DEVICE IS IN 3D SPACE

VECTOR MEASUREMENT with 2 PLANESVECTOR MEASUREMENT with 2 PLANES

RADIATION HARDNESS RADIATION HARDNESS --> LOW RESISTIVITY ~10 --> LOW RESISTIVITY ~10 ""cmcm HIGH FIELD at LOW BIAS HIGH FIELD at LOW BIAS

PRACTICAL ASPECTS TO BE SOLVEDPRACTICAL ASPECTS TO BE SOLVED

ADVANTAGES THIN SiADVANTAGES THIN Si


IMECIMEC

THIN WAFERS and THROUGH VIATHIN WAFERS and THROUGH VIA


3-D MULTILAYER STACKPACKAGING

WITH THIN (< 50 um ) WAFERS & THROUGH-WAFER VIA'S (CONNECTIONS)


3D STACKING TECHNOLOGY3D STACKING TECHNOLOGY

SAMSUNG at ISSCC 2007


TSUKUBA TSUKUBA ASETASET K. Takahashi et al, Microel. Rel. 2003K. Takahashi et al, Microel. Rel. 2003

SUPER ADVANCED TECHNOLOGYSUPER ADVANCED TECHNOLOGY

INCREASE of FUNCTIONAL DENSITY REQUIRES 3D STRUCTURES


TRACK VECTOR DETECTORTRACK VECTOR DETECTOR

3D TECHNOLOGY3D TECHNOLOGY** MULTILAYER ASSEMBLY MULTILAYER ASSEMBLY

Sensor

Interposer

CMOS

CMOS

Interposer

Sensor

PROVIDES X , Y , QX , QY

intersecting position + angular direction


PROCESSING LAYERS

LOW MASS

50 x 50 x 50 50 x 50 x 50 µµm SIGNALS ~ 3000 em SIGNALS ~ 3000 e--

SMALLER PIXELS / VOXELSSMALLER PIXELS / VOXELS

50 µm

250 µm

50 µm

TOP SENSOR LAYER

BOTTOM SENSOR

~10°

~18°

2-LAYER COINCIDENCE :- CONFIRMS TRACK STUB- ELIMINATES PHOTON HIT, NOISE

APPROXIMATE VECTOR

PROCESSING BETWEEN SENSORS


MEDIPIX2 and TIMEPIX SYSTEMS

USE ARRAY of 55 um pixels

SQUARE PIXELS, LOW NOISE

STUDY with THIN, HYBRID DETECTOR ARRAY

EXPLOIT CHARGE DIFFUSION over PIXEL BORDERS


SETUP in H6 BEAM CERNSETUP in H6 BEAM CERN

BEAM AXIS H6

ACTIVE AREA SENSOR

14.08x14.08 mm2

256x256 PIXELS

PERIPHERAL CHIP FUNCTIONS

SENSOR 45 DEGREES

READO

UT C

HIP

ASSEMBLY SUPPORT PCB

WIREBOND CONNECTIONS

USB PROCESSOR MODULE

FLAT CONNECTOR

x (rows )y (thickness)

z (colums)beam


SETUP in H6 BEAM CERNSETUP in H6 BEAM CERN

BEAM AXIS H6

ACTIVE AREA SENSOR

14.08x14.08 mm2

256x256 PIXELS

PERIPHERAL CHIP FUNCTIONS

SENSOR 45 DEGREES

READO

UT C

HIP

ASSEMBLY SUPPORT PCB

WIREBOND CONNECTIONS

USB PROCESSOR MODULE

FLAT CONNECTOR

x (rows )y (thickness)

z (colums)beam


H6 120 GeV PIONSH6 120 GeV PIONS

EXPOSURE 1 s

Parallel Medipix2 P-02-0668

14.08 mm

256 pixels

PARTICLE 'TRAILS'~ PARALLEL


MEDIPIX2 MATRIX


BUMP BONDING Medipix2BUMP BONDING Medipix2

0.25 µm CMOS CHIPCERN 2001CAMPBELL & LLOPART256 COLUMNS x 256 ROWSpixel 55µm x 55 µm

BUMP DEPOSITION & SEM PHOTOSCOURTESY MCNC-RDI DURHAM NC

PITCH 55 µm

HIGH RESISTIVITYSi SENSOR MATRIX

CANBERRA SEMICONDUCTOR


55 mm

Medipix2 PIXEL CELL LAYOUTMedipix2 PIXEL CELL LAYOUT

55 mm

CMOS technology 0.25CMOS technology 0.25mmmm

6 metal layers6 metal layers

pixel cell has ~500 transistors pixel cell has ~500 transistors fifi

chip ~33 million transistorschip ~33 million transistors

AMPLIFIER

LOW, HIGHCOMPARATORS

CONF. REGISTER

DISC.LOGIC

COUNTER

Static power consumption:Static power consumption:~~88mmW/channel @ 2.2 VW/channel @ 2.2 V

Amplifier Gain: Amplifier Gain: ~11 ~11 µµV/V/ee--

Electronic Noise: Electronic Noise: ~100 e~100 e- - rms.rms.


MEDIPIX2MEDIPIX2 PIXEL BLOCK DIAGRAM PIXEL BLOCK DIAGRAMaccepts accepts positive and negativepositive and negative input input __ different detector materials different detector materials

charge sensitive preamplifier with individual leakage current charge sensitive preamplifier with individual leakage current compensation CSAcompensation CSA

2 discriminators2 discriminators with globally adjustable threshold with globally adjustable threshold

3-bit local fine3-bit local fine tuningtuning of the threshold per discriminator of the threshold per discriminator

1 test and 1 mask bit1 test and 1 mask bit

external shutter activates the counterexternal shutter activates the counter

13-bit pseudo-random 13-bit pseudo-random counter/counter/

shift registershift register

Preamp

Disc1

Disc2

Double

Disc logic

Vth Low

Vth High

13 bits

Shift

Register

Input

Ctest

Testbit

Test Input

Maskbit

Maskbit

3 bits threshold

3 bits threshold

Shutter

Mux

Mux

ClockOut

Previous Pixel

Next Pixel

Conf

8 bits configuration

Polarity

Analog Digital

65 536 X

CSA CSA


LOW NOISE ELECTRONICSLOW NOISE ELECTRONICSREADOUTREADOUT


TRIMMED THRESHOLD DISPLACED to 'LOW' VALUETRIMMED THRESHOLD DISPLACED to 'LOW' VALUE

1100 e1100 e-- or 4 keV in Si or 4 keV in Si

LOW SIGNALS CAN BE USEDLOW SIGNALS CAN BE USED

GENERATED by M.I.P. in ~16 µm Si

SMALL PIXEL CELL55µm x 55µm

THRESHOLD TRIMMING

IN BEAM TEST 800 e800 e-- to 1000 e to 1000 e-- STILL TO BE CALIBRATEDSTILL TO BE CALIBRATED


SMALL, SQUARE Si PIXELS 55 SMALL, SQUARE Si PIXELS 55 µµm x 55 m x 55 µµmm x 300 x 300 µµmm

AMPLIFIER ASYNCHRONOUS, NOISE ~ 135 eAMPLIFIER ASYNCHRONOUS, NOISE ~ 135 e-- r.m.s. r.m.s.

BINARY RESPONSE, ADJUSTABLE THRESHOLDBINARY RESPONSE, ADJUSTABLE THRESHOLDPRECISE, SMALL STEPS + INDIVIDUAL PIXEL TUNINGPRECISE, SMALL STEPS + INDIVIDUAL PIXEL TUNING

LOWEST THRESHOLD ~800 eLOWEST THRESHOLD ~800 e-- ~3 keV ~3 keV

SIGNAL mip in 55 SIGNAL mip in 55 µµm Si : 13.8 keV m Si : 13.8 keV (250eV/(250eV/µµm)m)

3800 e3800 e-- DIAGONAL CROSSING DIAGONAL CROSSING ##2 --> 77.82 --> 77.8µµmm

5300 e5300 e--

SHUTTER SHUTTER >0.01 ms>0.01 ms

LOW NOISE in MEDIPIX2LOW NOISE in MEDIPIX2


STACKING

MXR CALIBRATION

USING FLUORESCENCE X-RAY PHOTONS

MINIMUM ENERGY 3.3 keV

~ 900 e-


in H6 120 GeV/c BEAMin H6 120 GeV/c BEAM

MEDIPIX Si MATRIXMEDIPIX Si MATRIX


CHARGE COLLECTION & LATERAL DIFFUSIONCHARGE COLLECTION & LATERAL DIFFUSION

a PARTICLE ~ MIDDLE of PIXELSTOP ROW

b PARTICLE CLOSE to REARMIDDLE ROW

DIFFUSION widthshown EXAGGERATED

a

b

e -

h +

DRIFT

+100V

GROUND


PION INTERACTIONS 2006

38Erik HEIJNE CERN PH Department SLAC Instrumention Seminar 27 June 2007Parallel Medipix2 P04-0356


SHUTTER 50 ms

14.08 mm

256 pixels

BEAM HODOSCOPE&

TARGET&

DETECTOR



SHUTTER 50 ms

14.08 mm

256 pixels

AMBIGUITY on TRACKSAWAY

orTOWARDS

Parallel Medipix2 P04-0356


35

40

50

60

80

70

90

100

110

130

120

1mm


Parallel Medipix2 0016

3-D RECONSTRUCTION

INTERACTION 190µm behind SENSOR

ALL TRAILS in SAME DIRECTION


MODIFICATION of MEDIPIX2

CLOCK up to 100 MHz to EACH PIXEL

ADDED MODES:

ENCODING of ARRIVAL TIME of PULSE

ENCODING TOTAL 'TIME OVER THRESHOLD'

TIMEPIX CHIP 2007

TIMEPIX CHIP was DESIGNED for GASEOUS TPC READOUTunder DEVELOPMENT for ILC by EUDET COLLABORATION


TIMEPIX CELL LAYOUTDESIGNER

Xavier LLOPART

CERN

PhD Thesis p. 107

1. PREAMPLIFIER CSA

2. THRESHOLD, 4-BIT TUNING

3. 8-BIT CONF REGISTER

4. REF_CLK & SYNCHR LOGIC

5. 14-BIT COUNTER


BASED on MPX2-MXR ADDEDREF_CLK -> 100 MHz

TIMEPIX SCHEMATIC


TIMEPIX SIMULATIONS

MODE : ARRIVAL TIME MODE : TOT 'TIME over THRESHOLD'

100 MHz


SIMULTANEOUS MIXED : TOT-MODE & ARRIVAL-TIME MODE

TIMEPIX + GEM in DESY e- BEAM

TIME x 10 nsANALOG CHARGE


TIMEPIX

TOT-MODE

TIMEPIX-TOT in H6 PION BEAM


INTERACTION

+ RECOILS


NOTE

+ DELTA RAYS

+ BRAGG PEAK atEND of TRAILS


SAME FRAME ENLARGED, DIFFERENT FULL SCALE


M.I.P. TYPICALLY DEPOSITS 200 - 300 eV per um11- 16.5 keV in PIXEL TOT RANGE 70-95 (1 keV~6)



ANOTHER INTERACTION





INTERACTION

with TWO ENERGETIC

OUTGOING PARTICLES

LARGE ENERGY DEPOSITAROUND VERTEX

SEE NEXT SLIDE



LARGE ENERGY DEPOSITAROUND VERTEX

10 PIXELS > 5000 +

20 PIXELS > 1000

NO CALIBRATION as YET,NON-LINEAR RESPONSE

TOTAL DEPOSIT VERTEXPROBABLY >> 100 MeV


MUONS from !, K DECAY

MEASUREMENTS MEDIPIX 2006

VECTORS & SUBMICRON PRECISION


Parallel Medipix M-01-0025

H6 BEAM DECAY MUONS + BACKGROUNDH6 BEAM DECAY MUONS + BACKGROUND

ALPHA or NEUTRON

ELECTRONS

3 MUONS

(some dead pixels)



H6 DECAY MUONS : EFFICIENCYH6 DECAY MUONS : EFFICIENCY

#1

#4

#5

#6

SOME DEAD PIXELS

NO EFFECT on EFFICIENCY

TOTAL ENERGY/CHARGE in a TRAIL

3.4 MeV or ~1M e -CAN BE USED FOR TIMING/TRIGGER


CHARGE-SHARING & SINGLE - QUANTUM PROCESSING

MULTIPLE HITS for BINARY OPERATION if SMALL PIXEL DIMENSIONSTHICK SENSORLOW TRESHOLD

ENERGY SPECTRAL DISTRIBUTIONREDUCTION of PEAKINCREASE LOW - ENERGY TAIL

SMALL-PIXEL CHARGE SHARING


NEW CHIP

ATTACKS SHARING

INTERMEZZO


ANALOG SHARING

CHARGE SPREAD


MEDIPIX3 PRELIMINARY SCHEMATIC

DESIGNERRafael BALLABRIGACERNIEEE NSS 2006, San Diego


STACKING

STACKING


DOUBLE HITS

EXPLOIT LOW THRESHOLD

BINARY CHARGE SHARING


CHARGE SHARINGCHARGE SHARING

a and b SHARE SIGNAL CHARGE

COMPARATOR SIGNAL if > ~ 800 e -

> 800 / 3800 e -

> 20% PARTITION

a

b~8µm

DIFFUSION PRODUCES DOUBLE HITSDIFFUSION PRODUCES DOUBLE HITS

e -

h +



MUON TRAILS : 'CLOSED' SEGMENTSMUON TRAILS : 'CLOSED' SEGMENTS

VECTOR MEASUREMENTSfrom 'CLOSED SEGMENTS'

BOUNDED by SEQUENCES of DOUBLE HITS

ROW TRANSITION POINTS

#4



HIGH RECONSTRUCTION PRECISION with MUONSHIGH RECONSTRUCTION PRECISION with MUONS

DOUBLE HITS ---> PRECISE ROW TRANSITION POINTS CONSTRAIN TRAJECTORY to~ 0.05 µm (??)

HOW to DEAL with SUCH DATA

1

1

111

1

11

1

1

1 1111

1

11

1

11

11 1

(90,212)

BOX8 µm

440 µm

37

44

TRAIL



H6 DECAY MUONSH6 DECAY MUONS

HIGH PRECISIONat OVERLAP POINTS

VECTOR MEASUREMENTS

ANGULAR DISTRIBUTIONS



MUON VECTORSMUON VECTORS

VECTOR MEASUREMENTS

20.9220.92FIT on 5 ptsFIT on 5 pts

23.423.4256256219219PIXELS 1-256PIXELS 1-256

39.239.225.525.52020open right 6open right 6

20.220.249.549.5414155

20.620.648.548.5414144

22.022.045.545.5373733

20.620.648.548.5434322

26.026.038.538.53737open left 1open left 1

TILTTILTmradianmradian

INCL.INCL.OVERLAPOVERLAP

SINGLESINGLEHIT PIXELSHIT PIXELS

SEGMENTSEGMENT

Comparison of Tilt Angles for segments of Trail #4 in frame M01-013

4


H6 MUON ANGULAR DISTRIBUTIONH6 MUON ANGULAR DISTRIBUTION

ANGULAR DISTRIBUTIONVERTICAL PLANECONE of 15 mradians

0

2

4

6

8

10

12

14

16

18

20

-25

-20

-15

-10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75

Tilt Angle Vertical Plane (mradians)

Frequency

0

2

4

6

8

10

12

14

20.0

25.0

30.0

35.0

40.0

45.0

50.0

55.0

60.0

65.0

70.0

75.0

80.0

85.0

90.0

95.0

100.

0

105.

0

110.

0

115.

0

120.

0

Tilt Angle Horizontal Plane

Frequency

ANGULAR DISTRIBUTIONHORIZONTAL PLANE+ and - mixed

CONE of > 40 mradians

+ wide background



MUON TRAJECTORIES MUON TRAJECTORIES

RESIDUALS can be MEASURED in a SINGLE DETECTOR

#4

COMPARE SEQUENCES of SINGLE HITSDOUBLE HITS


PRECISION PRECISION

8 µm

4 µm

DOUBLE-HIT SERIESRIGHTMOST in TRAIL 5

(90, 212)


SENSITIVITY for CHANGE of SEQUENCE LENGTH SENSITIVITY for CHANGE of SEQUENCE LENGTH

4 µm

1 PIXEL LESS

1 PIXEL MORE

440 um TILT 18.18 mrad

16.16 mrad

Dx 0.44 µm

x

z

20.78 mrad

Dx - 0.57 µm

TILT on LEFT CLOSED SEGMENT

Dx = 47µm on 44x55µm --> 19.42 mrad

DOUBLE-HIT SERIES


0

1

2

3

4

5

6

7

8

-2.5

-1.8

-1.1

-0.4 0.

3 11.

72.

4

Bin !m

Fre

qu

en

cy

AUTO - RESIDUALSAUTO - RESIDUALS

USE MUON TRAIL SEGMENTSTO PREDICT POSITIONS inROW OVERLAP POINTS(TAKE ALWAYS MIDDLE OF SEQUENCE)

RESIDUAL DISTRIBUTION

RANGE ± 2.5 µm s = 0.8 µm


APPLICATIONS ?APPLICATIONS ?

NEED THICKER STACKNEED THICKER STACK

MAY BE THIN SHELLMAY BE THIN SHELL

TECHNOLOGY DEVELOPMENTTECHNOLOGY DEVELOPMENT


STACKED CUBESTACKED CUBE

COMPONENTS 'EXIST'

3-D TECHNOLOGY ALREADYAPPLIED at LOS ALAMOS

300 µm

SENSOR

EDGE

25 µm

COOLING SHEETDIAMOND ?

30 µm

READOUT CHIP

EXTENSIONSENSOR CHIPS

COOLING and SUPPORT

ELECTRICAL CONNECTIONS + READOUT

14 mm

700 µm

14 mm

14 mm40 CHIP LAYERS


ACTIVE Si TARGETSINTEREST 1985-1995 BUT:EXPLOIT FIXED TARGET BEAMS in FUTURE'CENTRAL' DETECTOR at NEUTRINO FACTORY

CALORIMETER PRE-SHOWER HIGH PRECISION ENTRY SHELLPARTICLE RECOGNITION by PATTERN

PARTICLE IDENTIFICATION p,p,K,e-,m

NEEDS ANALOG SIGNAL --> TIMEPIX CHIP

MANY SAMPLES ARE POSSIBLE

SOME POTENTIAL APPLICATIONSSOME POTENTIAL APPLICATIONS


SOME POTENTIAL APPLICATIONSSOME POTENTIAL APPLICATIONS

WHAT ABOUT SLHC TRACKERS ???

INNER SHELL OF RADIALLY STACKED Si ( 3 mm thick) ?

COMPACT MULTI-LAYER VECTOR DETECTOR

VERTEX IDENTIFIER + ASSOCIATED TRAILS

HIGH PRECISION POINT CLOSE to INTERACTION

TRADEOFF TO BE STUDIED : MATERIAL vs PATTERN RECOGNITION, PRECISION


INTEGRATION of MICROELECTRONICS and DETECTORINTEGRATION of MICROELECTRONICS and DETECTOR

OPTIMIZATION in view of AIMS in EXPERIMENTOPTIMIZATION in view of AIMS in EXPERIMENT

RATE CAPABILITYRATE CAPABILITY

TRACKING PRECISIONTRACKING PRECISION

TRIGGER SELECTIVITYTRIGGER SELECTIVITY

RADIATION HARDNESSRADIATION HARDNESS

RELIABILITYRELIABILITY

INVESTIGATE TRADE-OFFS in NEW APPROACHESINVESTIGATE TRADE-OFFS in NEW APPROACHESLONG-TERM DEVELOPMENTLONG-TERM DEVELOPMENT

ECONOMICS NOT TRIVIALECONOMICS NOT TRIVIAL

IMPORTANT POINTSIMPORTANT POINTS


DIFFERENT APPROACH IN DETECTIONDIFFERENT APPROACH IN DETECTION

LARGE REDUNDANCY LARGE REDUNDANCY RELIABLE TRACK ASSOCIATION WITH VERTEXRELIABLE TRACK ASSOCIATION WITH VERTEX

IMAGING : REJECT ANOMALOUS PIXELS (e.g. IMAGING : REJECT ANOMALOUS PIXELS (e.g. dd - rays) - rays)

USE CHARGE DIFFUSION for SUBMICRON PRECISION USE CHARGE DIFFUSION for SUBMICRON PRECISION

MICROELECTRONICS OPENS NEW POSSIBILITIESMICROELECTRONICS OPENS NEW POSSIBILITIES

USE INDUSTRIAL STANDARDSUSE INDUSTRIAL STANDARDS

LOW NOISE ESSENTIALLOW NOISE ESSENTIAL

ON-LINE 1st LEVEL TRIGGER PROCESSINGON-LINE 1st LEVEL TRIGGER PROCESSING

CONCLUSIONSCONCLUSIONS





MUONSMUONS

Flat 45º Medipix2 Frame Oct M152



Parallel Medipix P-05-2086







Documents

THANKS TO - Stanford University · Erik HEIJNE CERN PH Department SLAC Instrumention Seminar 27 June 2007 30 ... Shift Register Input Ctest Testbit Test Input Maskbit Maskbit 3 bits