Tecport E-beam EvaporatorProcess parameters.

METALS:

1.Aluminium.2.Chromium.3.Gold.4.Titanium.5.Hafnium.6.Nickel.

OXIDES:

1. Aluminium Oxide. 2. Silicon Dioxide.3. Titanium Oxide.4. Indium – Tin Oxide.

List of materials which have been evaporated:

Aluminium (Al)

Base pressure: 2.1E-6 Torr.

Deposition pressure: 2.3E-6 Torr.

Rate of deposition: 5 Å/s.

Measured thickness (Dektak): 292.32 nm.

Annealing: Annealed at 450°C, with forming gas.

Sheet Resistance before annealing: 0 .124 Ω/.

Sheet Resistance after annealing: 0.121 Ω/.

Resistivity: 0.035 µΩ m.

Process parameter:

Al - XRD Data:

20 30 40 50 60 70 80 90 100

Al (111)

Al (200)

Inte

nsity (

a.u

)

2

As-deposited Annealed

Al (220)

Al (311)Si

Base pressure: 3.0E-6 Torr.

Deposition pressure: 2.2E-6 Torr.

Rate of deposition: 1 Å/s.

Measured thickness (Dektak): 52.26 nm.

Sheet Resistance. 117 Ω/.

Resistivity: 52.26E-9 X 117 = 6.1 µΩ m.

Chromium (Cr)

Process parameter:

Cr - XRD Data:

Gold (Au)

Base pressure: 4.2E-6 Torr.

Deposition pressure: 8.89E-6 Torr.

Rate of deposition: 1 Å/s.

Measured thickness (Dektak): 187.535 nm.

Sheet Resistance: 0.258 Ω/.

Resistivity: 187.535E-9 X 0.258 = 0.048 µΩ m.

Process parameter:

Au - XRD Data:

Titanium (Ti)

Process parameter:

Base pressure: 2.0E-6 Torr.

Deposition pressure: 2.17E-6 Torr.

Rate of deposition: 4 Å/s.

Measured thickness (Dektak): 60 nm.

Sheet Resistance: 17.5 Ω/.

Resistivity: 17.5 X 60E-9= 1.05 µΩ m.

Ti - XRD Data:

10 20 30 40 50 60

Inte

nsity (

a.u

)

2

Ti (111)

Si

Ti - XPS Data:

0 15 30 45 60

20

30

40

50

60

70

O2

atom

ic co

ncen

tratio

n (%

)

Etch time (sec)

0 15 30 45 6030

40

50

60

70

80

Ti a

tom

ic c

once

ntra

tion

(%)

Etch time (Sec)

From XPS data shows that the atomic concentration of O2 is more on the surface and with depth it is decreasing and the atomic concentration of Ti is increasing with depth.

Hafnium (Hf)

Process parameter:

Base pressure: 3.26E-6 Torr.

Deposition pressure: 1.9E-6 Torr.

Rate of deposition: 3 Å/s.

Measured thickness (Dektak): 18.23nm.

Sheet Resistance: 145.5 Ω/.

Resistivity: 145.5 X 18.23E-9= 2.65 µΩ m.

Hf - XRD Data:

Nickel (Ni)

Process parameter:

Base pressure: 3.2E-6 Torr.

Deposition pressure: 8E-6 Torr.

Rate of deposition: 1 Å/s.

Measured thickness (Dektak): 65.3 nm.

Annealing: Annealed at 450°C.

Sheet Resistance before annealing: 5.09 Ω/.

Sheet Resistance after annealing: 5.75 Ω/.

Resistivity after annealing: 37.5E-8 Ω m.

Ni - XRD Data (Before annealing):

Ni - XRD Data (After annealing):

Aluminium Oxide (Al203):

Process parameter:Base pressure: 4E-6 Torr.

Deposition pressure: 8.71E-6 Torr.

Rate of deposition: 1 Å/s.

Measured thickness (Dektak): 150.5 nm.

Measured thickness (Ellipsometer): 133 nm.

ANALYSIS:

Aluminium Oxide (Al203) with O2:

Base pressure: 3E-6 Torr.

Deposition pressure: 4.86 E-5 Torr.

Rate of deposition: 1 Å/s.

Flow rate (O2): 1 sccm (O2 started 1 min before deposition).

Measured thickness (Dektak): 150 nm.

Measured thickness (Ellipsometer): 144 nm.

Process parameter:

ANALYSIS:

Silicon Dioxide (SiO2):

Process parameter:Base pressure: 2E-6 Torr.

Deposition pressure: 6E-6 Torr.

Rate of deposition: 1 Å/s.

Measured thickness (Dektak): 134 nm.

Silicon Dioxide (SiO2) with O2:Process parameter:

Base pressure: 2E-6 Torr.

Deposition pressure: 4E-5 Torr.

Rate of deposition: 1 Å/s.

Measured thickness (Dektak): 150 nm.

ANALYSIS:SiO2 Vs. SiO2 with O2

Titanium Oxide (TiO2):

Process parameter:

Base pressure: 4.8E-6 Torr.

Deposition pressure: 4E-5 Torr.

Rate of deposition: 1 Å/s.

Flow rate (O2): 1 sccm.

Measured thickness (Ellipsometer): 77.6 nm

ANALYSIS:wavelength Vs. refractive index and extinction coefficient:

200 300 400 500 600 700 800 900 1000 1100

2.0

2.2

2.4

2.6

2.8

3.0

Refractive Index Extinction Coefficient

Wavelength (nm)

Refract

ive In

dex

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Extin

ction C

oeffi

cient

Wavelength (nm) N K

631.45 2.057 1.007 E-005

633.03 2.056 9.813 E-006