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Materials Science Forum Vol. 116 (1993) pp 81-120© (1993) Trans Tech Publications, Switzerlanddoi:10.4028/www.scientific.net/MSF.116.81
All rights reserved. No part of contents of this paper may be reproduced or transmitted in any form or by any means without the written permission of TTP,www.ttp.net. (ID: 130.207.50.37, Georgia Tech Library, Atlanta, United States of America-30/05/14,06:32:02)
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Defects in Electronic Ceramics 10.4028/www.scientific.net/MSF.116 Surface and Interface Segregation Phenomena in Oxide Ceramics 10.4028/www.scientific.net/MSF.116.81
DOI References
[2] G.A. Rozgonyi, J.W. Honeycutt: ''Point defect enqineering for ULSI siliciderocess'' in: Gettering and
defect engineering in semlconductor technology, M.ittler, H. Richter Edts., Trans-fkch Publ. Zuerich, (1991)
p.12l
doi:10.4028/www.scientific.net/SSP.19-20.121 [8] M.J. Davies, P.R. Kenway, P.J. Laurence, S.C. Parker, W.C. Mackrodt, P.W.asker'. ''Impurity segregation
to the surfaces of corundum-structured oxides''. Chem. Soc., Farad. Trans. 2, 85 (1989) 555
doi:10.1039/f29898500555 [18] ref. l2, p. l 69.G.E. Pike: ''Semiconductor grain boundary admittance : Theory'' Physicalev.B 30 (1984)
795
doi:10.1103/PhysRevB.30.795 [21] G. Petermann: '? DC and AC characterization of grain boundaries in floatone silicon'' phys. stat. sol.(a)
106 (1988) 535
doi:10.1002/pssa.2211060225 [24] A. Bourret-. ''Atomic structure of grain boundaries'' in: Polycrystalline semi-onductors, G.l-larbeke Edt-,
Springer Verlag, Berlin (1985) p.2
doi:10.1051/jphyscol:1985402 [26] D.M. Duffy, P.W. Tasker: ''A dislocation model for the structure of (00 l )wist boundaries in ionic
oxides'' Phil. Mag. A, 53 (1986) l 13
doi:10.1080/01418618608242811 [28] K.L. Merkle, D. J. Smith: ''Atomic resolution electon microscopy of NiO grainoundaries''
Ultramicroscopy 22 (1987) 57
doi:10.1016/0304-3991(87)90050-7 [29] K.L. Merkle: ''High-resolution electron microscopy of interfaces in fcc mate-ials'' Ultramicroscopy 37
(1991) l 30
doi:10.1016/0304-3991(91)90013-V [30] K.J. Morrissey, C.B. Carter: ''Faceted grain boundaries in A12Oa'' J. Am.eram. Soc. 67 (1984) 292
doi:10.1111/j.1151-2916.1984.tb18851.x [34] R. Mccune, P.Whynblatt: ''Calcium segregation to a magnesium oxide (100)urface'' J. Am. Ceram. Soc.
66 (1983) l l I
doi:10.1111/j.1151-2916.1983.tb09985.x [37] E. Guggenhcim: '' Thermodynamics'' Korth Holland Publ. Amsterdam (1967)
doi:10.1055/s-0028-1106047 [43] A. Roshko, W.D.Kingery-. ''Segregation at special boundaries in MgO'' J. Am.cram. Soc. 68 (1985) (2-
331
doi:10.1111/j.1151-2916.1985.tb10138.x [44] R. F. Cook, A.G. Schrott: ''Calcium Segregation to grain boundaries inlumina'' J. Am. Ceram. Soc. 71
(1988) 50
doi:10.1111/j.1151-2916.1988.tb05759.x [45] S. Baik, C.L. White ''Anisotropic calcium segregation to the surface oflumina'' J. Am. Ceram. Soc. 70
(1987) 682
doi:10.1111/j.1151-2916.1987.tb05739.x [46] S. Baik, D.E. Fowler, J.M. Blakely, R. Raj: ''Segregation of Mg to the (0001)urface of doped sapphire'' J.
Am. Ceram. Soc. 68 (1985) 28 l
doi:10.1111/j.1151-2916.1985.tb15323.x [48] S.M. Mukhopadhyay, A.P. Jardine, J.M. Blakeley: ''Segregation ofagnesium and calcium to the (1010)
prismatic surfacc of magnesium-implantedapphire'' J. Am. Ceram. Soc. 71 (1988) 358
doi:10.1111/j.1151-2916.1988.tb05054.x [53] S.B. Desu, D.A. Payne: ''Interfacial segregation in perowskites'. 1, Theory'' J.m. Ceram. Soc. 73 (1990)
339 1
doi:10.1111/j.1151-2916.1990.tb06466.x [56] S.B. Desu, D.A. Payne: ''lnterfacial segregation in perowskites'' lV, lnternaloundary layer devices'' J. Am.
Ceram. Soc. 73 (1990) 3416
doi:10.1111/j.1151-2916.1990.tb06469.x [57] S. Pizzini: ?'The role of extcnded defects in electronic ceramics'' Materialshem.phys. 23 (1989) 349
doi:10.1016/0254-0584(89)90079-5 [59] R. W. Grimes, C. R. Catlow: ''Modelling localized defects in ionic materialssing Mott- Littleton and
embedded quantum cluster. methodology'' J. Am.eram. Soc. 73 (1990) 3251
doi:10.1111/j.1151-2916.1990.tb06446.x
