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8/8/2019 Suppressing Power and Ground Noise
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1
Suppressing Power and Ground Noise in High
Performance Consumer
Electronics
PP
anasonicanasonic
EE
lectroniclectronic
DD
evices,evices,
Co. LtdCo. Ltd
Hiroshi Higashitani Hiroshi Higashitani
8/8/2019 Suppressing Power and Ground Noise
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2
Agenda
Suppressing Power and Ground Noise in High Performance Consumer Electronics
– Reducing EMI/EMC problems early in the design cycle using a virtual design process hasbeen a dream for many engineers fettered with the problem of fixing complex coupling issues
on nearly finalized designs. However, the complexity of designs, the lack of tools, and anunder-appreciation for today’s compute power has limited the widespread adoption ofsimulation in this area.
– Working together with Panasonic, Ansoft has created a reliable methodology that enablesvirtual design for today’s complex EMI/EMC problems. The author will first discuss commonproblems high speed board designers face when working to meet challenging noise andperformance specifications. Next, using a reference design board, attendees will witnesshow to quickly and accurately predict and suppress board resonances. The design flowproposed will illustrate how to use 3D extraction together with advance circuit simulation andcommon EDA layout tools to pin-point the problems before the actual production of theboard. The insight provided by simulation will be highlighted, design changes that addressthese issues will be made, and the new design will be re-simulated.
– Proper measurement techniques will be shown and discussed. Next, results that validate
the method and compare the simulated and measured results for the original design as wellas the improved design will be shown. Ample time will be allotted so that engineers wishingto engage engineers from Panasonic and Ansoft directly can do so either during and/or afterthe presentation.
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3
・
コン
デンサ
スピーカ
モジュール
回路基板
変成器
回路部品
機構部
品
チップ
R
MLCC
チッフ R(アレイ)
テ シ タル チューナ
機能性コンテ ンサ
電気二重層
コンテ ンサ
コモンモード
ノイス フィルタ
ハ ワー チョークコイル
電源ユニット
インハ ゙ー タトランス
ALIVH
リモコン
基地局モシ ュール
Bluetooth SDIO-11b多層基板
チタンドー ムスピー カ
マイクロス ピー カ
レシーバ
ライトタッチスイッチ
タッチハ ネ ル Capacitor G
Module BU
Printed Circuit
Board BU
Inductive
Products BU
Circuit
Components BU
Electro-
Mechanical BU
Speaker BU
Main Products in PED
8/8/2019 Suppressing Power and Ground Noise
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PowerSupply
Power Choke CoilPower Choke Coil
Switching Loss Switching Loss
SPSP--CapCap
Radiation Noise Radiation Noise
R,C,BeadR,C,Bead--Array &Array &
RCRC--NetworkNetwork
Mounting Issue Mounting Issue
(Area & Cost) (Area & Cost)
Common ModeCommon Mode
Noise FilterNoise FilterCommon Mode Common Mode
Noise Noise
2 Mode Noise Filter2 Mode Noise Filter
Common & Normal Common & Normal
Mode Noise Mode Noise
We prov ide t he best so lu t ion !! We prov ide t he best so lu t ion !! We prov ide t he best so lu t ion !!
For Good Qual i t y & Good Per form anc e For Good Qual i t y & Good Per form anc e For Good Qual i ty & Good Per form anc e
PED Device Solution
ChipChip VaristorVaristorESD Noise ESD Noise
ESD SuppressorESD Suppressor
① Radiation noiseRadiation noise
reductionreduction
② Noise reductionNoise reduction
for Parallel data bus linefor Parallel data bus line
③High speedHigh speed
differential transmissiondifferential transmission
Interface Interface
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PowerSolutionPowerPowerSolutionSolution
EMI/ESDSolution
EMI/ESDEMI/ESDSolutionSolution
CapacitorsSolution
CapacitorsCapacitorsSolutionSolution
ZNRNRhiphip Thermistorhermistor Chiphip Varistoraristorhip Lhip L
ChipChip RR ChipChip R(R(ArrayArray))RCRC NetworkNetwork
CircuitCircuit
ProtectionProtection
ComponentComponent
22 ModeMode
Noise FilterNoise Filter
Chip Beadship Beads LC FilterC Filter
SPP-CAPAP Film Cilm C X-Y CondenserCondenserhip Film Chip Film C
Common ModeCommon Mode゙
Noise FilterNoise Filter
Ceramic CCeramic Chip Multilayer Ceramic Chip Multilayer Ceramic C
(MLCCLCC)Aluminum electrolytic CAluminum electrolytic C
Electric Double Layerlectric Double Layer
C
SolutionSolution
Smaller, High performance, and High Functionality
LCR Circuit Components
Power Choke Coilower Choke Coil Line Filterine FilterW TransformerW Transformerompression Coilompression CoilCurrent Sensorurrent Sensor
Rhoke Coilhoke Coil
LCR Main Product Line in PED
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Array Chip Resistor(Usage: Pull-up, etc.)1005x4 Array Type 、8 Array TypeP/N:EXB28V、2HV 10 - 1M ohm
Chip Resistor: Serge R
(Usage:High Power Chip R)2012;1/4W、3216;1/3W、3225;
1/2WP/N:ERJP06、P08、P14 1 - 1M ohm
Multi-Layer Ceramic C
2012(4 Array)、 1410(2
Array)
P/N:ECJ Series
Chip Choke Coil(Usage:DC/DC Filter)P/N:ELL6U*** Type
Inverter Transformer(Usage: Back light)
Aluminum electrolytic capacitor
(Usage:AC/DC Voltage Supply)
For high ripple currentP/N:Snap-in terminal type EE series
Source SW Transformer(Usage:Resonator AC/DC)P/N: (Under development)
Film Capacitor(Usage:AC/DC Input
Filter)P/N:ECQUL***
Chip RC Network(Usage:One packing of RC ofthe data bus line. )
2012 P/N:EZACT
Common Mode Noise Filter(Usage:IEEE1394/HDMI)
1210、
2010 P/N:EXC24CG、
EXC28CE
Micro Chip fuses
(Usage:In-rush current)1005、1608 P/N:ERBSE、SD type
Chip Multi-Layer Varistor(Usage: Static electricity )
1005、1608、1410/2連 P/N:EZJZ series
EMI/ESD Filter(Usage: Digital Noise)
2012 EMI+ESD Composit Function
SP-Cap/Polymer Aluminum Capacitors
(Usage: De-coupling)
7343 P/N:CD、LL series
Chip ESD Suppressor(Usage:Static electricity /for GHz Band)
1005、1608 P/N:EZAEG**
PGS/Graphite seat(Usage:High temperature conduction
600~800W/m・K)P/N:EYGA***
General and Source ComponentsGeneral and Source Components Noise Reduction ComponentsNoise Reduction Components
Protection ComponentsProtection ComponentsHeat Resistance ComponentsHeat Resistance Components
Tentative
fo r
LCD-TV
Noise, Thermal, and other Components
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PTW
PMX
Electronic part special producing company 16 Part overseas production business place 2 Joint venture company 4 R&D base 4
P E DP E D
PEDUK
PEDEU
PEDEU-TC
PEDEU-SK
PEDMA
MEDEM
PEDSG-ST
PEDIDA
MAPREC
PEDHK
PEDJM
PEDTJ
PTCC
PEDBJ
PEDCBJ
PEDQD
PEDCA
PEDCA-TC
PEDCA-BC
PEDCA-TA
PACOB-AM
PEDTH
PEDSG-BT
PEDSG
Global production and R&D base list
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http://industrial.panasonic.com/i/library.htmlWEB
New
Devices for EMIDevices for EMI Devices for ESDDevices for ESD
Cable IC
Radiation noiseRadiation noise
LS ISI
(oadoad)
New
New
Radiation noiseadiation noise
suppressionuppression
of power supply line.f power supply line.
EMI and ESD suppressionMI and ESD suppression
off
audio and video signaludio and video signal
line.ine.
Connector
Chip resistors (186 parts numbers )
Chip inductors (45 parts numbers )
LC-LR Composite Devices(9 parts numbers ) ESD Suppressor
(2 parts numbers )
SP-Cap/Polymer Aluminum Capacitors(19 parts numbers )
2 mode andCommon
mode noise filter(10 parts
numbers )
Chip multi-layer ceramic capacitors<MLCC’s> (270 parts numbers)
Chip varistors(24 parts numbers )
Uploaded Devices on PED WEB Site
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Simulation analysis with substrate CAD data and Device Library
Evaluation blockcutting out
Eye pattern analysis TDR analysis
S parameterof circuit board
Circuit simulation
Transmissioncharacteristic analysis
Substrate CAD data
ICConnector
Material constant setting
Electromagnetic field analysis
ESD Suppressor
Chip varistorsCommonmodenoise filter
Device LibraryDevice Library
Simulation result
Simulationblock diagram
LCR solution activity flow
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Device selection and recommendedpattern proposal
(Transientanalysis)
Circuit simulation
Radiation obstructionwave measurement
-200
0
200
400
600
800
1000
1200
-20 20 60 100 140 180
Tim es (nSe cs)
V
o l t s
( V
)
0
時間(nSec)
電圧 ( V)
Electromagnetic radiatefield immunityexamination
Conduction obstruction wave
voltage measurement
Radiofrequencyconductionobstructionexamination
Simulation Noise evaluation at EMC SiteSelection of the
best parts
Analysis byelectromagnetic fieldprobe
①Solution corresponding to design phase
②Total solution with a lot of devices
LCR solution activity flow
Mass
production
PlanMaking
for trial purposesEvaluationCircuit design
Development step of set circuit design
Source GroundResonance Analysis
t
I
t
Vt
I
t
V
-100
-80
-60
-40
-20
0
20
(Frequency analysis)
S21(dB)
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Simulation analysis tool and analytical routine
CAD data
Transmission characteristic
1)TDR 2)Eye pattern
Ansoft Designer and NEXXIM
Allegro PCB
gerber
Zuken Convert
anf file
DXF file
ALIVH-DK HFSS
SI-Wave
Ansoft Designer(Planar EM)
S parameter / Co-simulation
Ansoft Links
Current distributionand magnetic field distribution
gds file
Convert
DataLink
HFSS
Radiation characteristic
CAD tool
CAD・Design tool
Power supply resonancecharacteristic
Circuit board data
Device Library
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LCR Solut ionCRCR Solut iono lu t ionPassive Component sassiveassive Componentsomponents
Noise SuppressionComponents
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Signal Line Source LineCapacitance (F)10pF 1nF 0.1uF 10uF 1mF 1F
Smaller :0402 High Capacitor :100uF
Film
Polymer
Aluminum electrolytic
Electric Double
Layer Capacitor
DC/DC LSI
MLCC
Low ESL:GH
zLow ESR
Usage
Oscillation and Synchronization
Time Constant Circuit
Coupling, Bias
Decoupling and Smoothing
Backup
Rival zone
ComponentSelection
(Example)
Miniaturization and lightening
capacity stability no piezo-electric
Excellent decoupling
Ripple
High power・Rapidelectrical charge anddischarge
Emission Noise Reduction and DC Source Capacito
Unnecessary radiation noise reductionon Power supply line
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0
5
10
15
0 200 400 600 800 1000
周波数(MHz)
イ ン ヒ ゚ ー タ ゙ ン ス ( Ω
High Frequency Impedance Characteristics
I m p e
d a n c e ( Ω )
DC/DC
LINE
DecouplingCapacitor
ESR
ESL
Operationclock
Low Impedancewith reduction of ESL
Specialty Polymer AluminumCapacitor
- Smoothing ripple
voltage - Less load fluctuation
0
50
100
150
0.1 1 10 100 1000 10000
SP-Cap
MLCC
Polymer Tantalum
Frequency(kHz)
Tantalum
Frequency(MHz)
LSI
C a p a c i t a n c e ( u F
)
(1)
(7)
(1)Mold resin (2)Silver paint(3)Carbon (4)Specialty polymer
(5)Aluminum foil (6)Internal terminal
(7)External terminal
A large capacity
Low ESR
Low ESL
Polymer Tantalum Capacitor
SP-Cap/Polymer Aluminum Capacitors
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-100
-80
-60
-40
-20
0
20
Simulation Example (Frequency analysis)
LSI
LSI
1
4 pieces
1GHz 10GHz100MHz10MHz1MHz100KHz
23
1S21 (dB) 1
Characteristic of Insertion loss with each capacitor
LSI
LSI
2
3
LSI
LSI
SP-Cap、Ceramic C
NEW SP-Cap(Low ESL)
2 pieces
1 pieces
Aluminum electrolysis(3)
+3 terminal capacitor
Emission Noise Reduction for DC Source
decrease
Simulation
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Uploaded Devices on PED WEB Site
http://industrial.panasonic.com/i/library.htmlWEB
Chip inductors (45 parts numbers )
Chip resistors (186 parts numbers ) Radiation noiseRadiation noise
LS ISI
(oadoad
)
New
Devices for EMIDevices for EMI Devices for ESDDevices for ESD
Cable IC
New
New
EMI and ESD suppressionMI and ESD suppression
off
audio and video signaludio and video signal
line.ine.
Radiation noiseadiation noise
suppressionuppression
of power supply line.f power supply line.
Chip multi-layer ceramic capacitors<MLCC’s> (270 parts numbers)
SP-Cap/Polymer Aluminum Capacitors(19 parts numbers )
Connector
LC-LR Composite Devices(9 parts numbers ) ESD Suppressor
(2 parts numbers )
2 mode andCommon
mode noise filter(10 parts
numbers )
Chip varistors(24 parts numbers )
N i R d ti : DC P
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0
10
20
30
40
50
60
70
Level [dBµV/m]
30M 50M 70M 100M 200M 300M 500M 700M 1G
Frequency [Hz]
Level [dBµV/m]
10
20
30
40
50
60
70
030M 50M 70M 100M 200M 300M 500M 700M 1G
Frequency [Hz]
Before
Actual Measurements (Example:Emission
Measurements)
Noise Reduction measure: DC Power
Line
Actual Test
0
10
20
30
40
50
60
70
30M 50M 70M 100M 200M 300M 500M 700M 1GFrequency [Hz]
LIM EN 55013_field Voltage QPLimit
SP-Cap CD series 6V47uF x 3pcsAfter
BMT Environment
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BMT Environment• Hardware
– Note PC( For Model Verification correction )• CPU: IBM ThinkPADT42p Mobile Pentium 2.0GHz• Memory: 2GB• GPU: ATI FIREGL T2 128MB Memory• Disk: 60GB
– Desk Top PC(For Analysis execution )• CPU: Dell Precidion PWS380 PentiumD 3.2GHz• Memory 3.2GB• GPU: NVIDIA QuadroFX540 128MB Memory
• Disk: 200 GB
• OS – Windows XP Service Pack2
– Windows XP x64 Edition
• Software – Ansoft links for Zuken / AnsoftLinks for Allegro – SIwaveV3.1.1
Power Integrity Analysis
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Power Integrity Analysis
• Power analysis is similar to Signal analysis
but models are traditionally much moredifficult to obtain
• PDS is coupled to Signal nets• Results can be interpreted through SIwave
or a model exported for SSO, SSN
analysis
PI Analysis Types
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PI Analysis Types
• Plane impedance – Verify low impedance up to device cut-off frequency
• Decoupling solutions – Verify capacitor placement and effectiveness
• Resonance modes
– Verify signal return path and power delivery
• Frequency sweep – Verify maximum IR drop across frequencies
• Isolation – Verify analog power supplies do not affect digital
Target Impedance of PDS
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Target Impedance of PDSHigh-Speed
Digital Device
Power
Delivery SystemV
I
V Z =
I
1. The Impedance looks into PDS at the device should be kept low over a broadfrequency range (from DC to package cut-off frequency)!
2. The Desired Frequency Range and Impedance Value is called TargetImpedance.
3. Target impedance goal is set with the help of allowable ripple on thepower/ground plane over a specified frequency range.
f
|Z|
Mag. of Z
target Z
Target Impedance Calculation
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Target Impedance Calculation
( ) ( )Current
Ripple Allowed Voltage Supply Power Z
_ _ _ ×=Target
3.3vVRM
4A 2A
3.3v plane
( ) ( )Ω=
×= m
A
v Z 5.82
2
%53.3v) Target(3.3
Example:
Target Impendence is the goal that designer should hit !!!
Components of Z
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Components of Z
• Impedance consists of – Capacitive factor, decreases with frequency
– Inductive factor, increases with frequency
– Inductance includes plane inductance, ESL of decouplingcapacitors, traces and vias which connect planes tocapacitors
C f π 2
1
L f π 2
f
|Z|
Mag. of Z
target Z
Inductivearea
Inductivearea
Capacitivearea
Capacitivearea
BulkCapacitance
BulkCapacitance
Decoupling Capacitors
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Decoupling Capacitors
Lower the impedance of the power deliverysystem and prevent energy transference fromone circuit to another
Supply current bursts for fast switching circuit
Provide AC connection between power andground planes for signal return current
Control EMI
Capacitor Considerations
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Capac to Co s de at o s
• Values are important
– Different values affect different frequencies• Real Capacitors are non-ideal
– Need to include frequency dependent ESR,
ESL
• Location is important
– Spreading inductance limits area ofeffectiveness
IC Evaluation Board (Source Ground Resonance Analysis)
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y
Noise of IC output
COND _1 COND _2 COND _3 COND _4 COND _5
Check Layer Structure before resonant analysis.GND,SVSS,AVSSPower Plane Layer is COND_7Multi Layer makes low Frequency Resonant
COND _8OND _6 COND _7
IC Evaluation Board: Source Resonance Analysis System
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IC Evaluation Board: Source Resonance Analysis System
BoardS parameter
S Parameter
Equivalent Model
Board Resonance Analysis
IC
Power supply Plane(L7)2.9V
Filter
PORT1
PORT2
PORT3
PORT4 PORT5PORT6
PORT7
PORT8
PORT9
PORT10 PORT11 PORT12 PORT13
PORT15
PORT14
Power supply Plane(L7)
5V
Setting Analysis Ports
Filter Filter Filter Filter
Filter
IC SPICE Simulator
Virtual noise analysis system
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Virtual noise analysis systemBefore Noise Measure
Board
S parameter
S Parameter
Equivalent Model
Board
S Paramter
S Parameter
Equivalent Model
Board Resonance Analysis
AfterBefore
Impedance controlwith capacitor orpower supply plane
modification
After Noise Measure
Virtual analysis systemWith substrate data andDevice Library
Virtual analysis systemWith substrate data andDevice Library
Board Resonance Analysis
SP-CapMLCC
IC SPICE Simulator IC SPIC Simulator
Noise reduction92MHz138MHz
184MHz
92MHz138MHz
184MHz
NoiseNoise
Resonant Analysis: Eigen value Analysis
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y g y
• Form of a substrate -> it resonates as an parallelmonotonous antenna The Rule Of Sum
Board Size is 150mmx140mm
Calculate….
• m=1:n=0
– 477MHz
• m=0:n=1
– 511MHz
• m=1:n=1
– 699MHz
:• Noise is aspired lower frequency
22
0
2⎟ ⎠
⎞⎜⎝
⎛ +⎟
⎠
⎞⎜⎝
⎛
ε=
b
n
a
mc f
r
c
ba
nm
C
f
r
c
,
,
0
ε
: resonance frequency [Hz]: velocity of light 3.0x108[m/s]
:dielectric constant: constant 0, 1, 2, and ...
:substrate size [m]
Resonance frequency
2 Layers Resonant Analysis
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y ySource Corner
V1G2
• 2 layer Resonant Analysis
– Eigen Mode Analysis – Voltage Probe
100mm
200mm
Voltage Probe
V1_G2RightX:190mmY: 50 mm
Voltage ProbeV1_G2UnderX:100mmY: 10 mm
Voltage ProbeV1_G2Upper
X:100mmY: 90 mm
Resonant Analysis: Eigen value Analysis
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• Form of a substrate -> it resonates as an parallelmonotonous antenna
The Rule Of Sum
Board Size is 200mmx100mm
Calculate….
• m=1:n=0
– 358MHz
• m=0:n=1
– 715MHz
• m=1:n=1
– 800MHz
:• Although approximation is
possible, loss and boardthickness are not taken into
consideration.
22
0
2⎟ ⎠
⎞⎜⎝
⎛ +⎟
⎠
⎞⎜⎝
⎛
ε=
b
n
a
mc f
r
c
ba
nm
C f
r
c
,
,
0
ε
: resonance frequency [Hz]: velocity of light 3.0x108[m/s]
:dielectric constant: constant 0, 1, 2, and ...:substrate size [m]
Resonance frequency
2 Layers Resonant Analysis
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y ySource Corner
• Non Voltage Source
Multi Layers Resonant Analysis
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y y
G1
G2V3G4V5G6
100mm
200mm
• Resonant Analysis
– 6 Plane layers
Multi Layers Resonant Analysis
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• 1st Resonant is Lower Frequency – 105.4 MHz
105.4MHz < 358Mhz! Different!
Resonant is differentby the numbers of
Power/GND layers.
SIwave Concept of Source/Ground Bounce
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V
S
Complex Interference
SIwave S-parameters include allthe complex interference of theSource/Ground and signal lines.
Thus the any excitation betweenthe source/round is observable at
probe any points.
Virtual True Ground
V
SIwave Generated S-parameter
IC
Vref
SIwave Concept of Source/Ground Bounce
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The area of simultaneous ON
N-MOS
P-MOS
VDD
GND
When the Timing is Changing ON with P-MOS and N-MOS,
It make simultaneous ON situation.Thus we need to consider the both of input Low and Highimpedance in EMI analysis.
Voltage Source Resistance
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V1G2
• 2 layer Resonant Analysis – Eigen Mode Analysis
– Voltage Source
• 1V/50 Ohm vs 1V/0.05Ohm
50 Ohm vs 0.05Ohm
100mm
200mm
Voltage ProbeV1_G2Right
X:190mmY: 50 mm
Voltage ProbeV1_G2UnderX:100mmY: 10 mm
Voltage ProbeV1_G2UpperX:100mmY: 90 mm
2 Layers Resonant Analysis
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V1G2
Source Corner• 2 layer Resonant Analysis
– Calculate S-,Z- Parameter
100mm
200mm
2 Layers Resonant Analysis
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Source Corner
• S para and Z Plot
Far Field plot by Voltage SourceR i 50Oh 0 05Oh
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Resistance 50Ohm vs 0.05Ohm• Voltage Source Resistance
50 Ohm0.05 Ohm
Frequency Sweep
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• Voltage Source:1V/50 Ohm
IC602IC Power supply I/F
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IC
+ + +
+ + + + +
+
REGPowerPlane(L7)
5V
PowerPlane(L7)
2.9V
PORT1
PORT2 PORT3 PORT4 PORT5 PORT6
PORT7
PORT8
PORT9
PORT10PORT11
PORT12 PORT13
PORT15
PORT14
※部品配置はL1(表層)、L8
Picture scanning line synchronizedSignal1 SIgnal2 I/F
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Signal1,SIgnal2 I/F
Signal1
IC
Signal1
Signal2
Signal2
Connector
Signal1
Signal2
Signal2
PORT1
PORT3
PORT6
PORT9
PORT10
PORT11
PORT12
BufferIC
Signal1
PORT2PORT4
PORT5PORT7
PORT8
Signal1
Signal2
Proposed Noise Reduction Method
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IC PIN LayoutIC PORT Setting (Power supply PIN)
PORT7
PORT8PORT9
PORT11
PORT12
PORT15
PORT10
PORT13
Signal2Signal2
Signal1
Signal1
Analyzed S parameter
IC Evaluation Board: Source Resonance Analysis
V lt S 0 05 5 50 Oh
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Voltage Source:0.05,5,50 Ohm1V
10MHz~200MHzLinearly 50 pointsL7-L8 LayersTime:19min 40 sec
Frequency Sweep
• Voltage Source:50 Ohm
92MHz
138MHz
184MHz
Signal1
Impedance Analysis10MH 200MH t Si lP t1 1
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10MHz~200MHz at SignalPort1-1
92MHz 138MHz 184MHz
IC Evaluation Board: Source Resonance Analysis
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Frequency Sweep
92MHz
138MHz
184MHz
• Voltage Source:0.05 Ohm
Signal1
Calculate the Min Capacitance
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MHzf
..V
AI
Fe.Vf
IC MHz@mim
1
05033
2
0692912
1
=
×=∆
=∆
−=∆π
∆=
CAPARRAY_1 C (F) L (H) R (Ohm)
C1-C22 (22ea) 1.00E-07 2.00E-09 0.2
1.9uF
Contribute 2.2uF
Choose Effective Capacitors
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10 nF1.2 nF
.15nF
1.5pF
Choosecapacitor withdesired SRF
from SIwave’svendor Library
Capacitor plotsare actual vendormeasurements
which includeESR and ESLeffects
Effect of ESL
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Capacitor1 Capacitor2 Capacitor3
C 1nF 1nF 1nF
ESR 100mOhm 100mOhm 100mOhm
ESL 0.1nH 0.5nH 1nH
Decreased ESLshifts SRF higher
in frequency
Effect of ESR
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Capacitor1 Capacitor2 Capacitor3
C 1nF 1nF 1nF
ESR 10mOhm 100mOhm 200mOhm
ESL 1nH 1nH 1nH
Decreased ESRshifts SRF lower
in magnitude
Decoupling Strategy
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Bare PCB
With Capacitors
Z 1 1
Verify theeffectiveness ofyour selection
and placementthrough Z plots
Resonance Simulation
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• Scans entire PCB/PKG on all layers• Eigen mode analysis identifies location and
frequency of natural cavity resonances that
exist between planes
• If a resonance is excited, Signal Integrity
can be compromised: High Z, null in S21,EMI etc.
• Resonances should be moved away from
critical parts and outside operatingfrequency
Reducing Resonance
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Resonances always exist butyou can reduce their impact by:
• Changing the decoupling scheme
• Changing the stackup
• Changing plane dimensions
• Adding via stitching
• Moving discrete parts
Evaluate of Capacitor Placement
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Evaluate of Capacitor Placement
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Evaluate of Capacitor Placement
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Evaluating CapacitorPlacement
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Placement• Impedance Plot :No Capacitor
Evaluating CapacitorPlacement
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Placement
Evaluating CapacitorPlacement
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Placement
Evaluating CapacitorPlacement
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Placement
Evaluating CapacitorPlacement
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Placement
Evaluating CapacitorPlacement
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Placement
Evaluating CapacitorPlacement
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Placement
Evaluating CapacitorPlacement
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Placement
Evaluating CapacitorPlacement
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C23A
C24C25
C28
C27
C26
Placement
Source Ground Resonance Noise Measure(MLCC 6 Components)
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C27ECJ1VC1H221J
(220pF)
C28ECJ1VC1H471J(470pF)
C9(3300pF)
C24(1000pF)
C25(1500pF)
C26(2200pF)
Power Plane (2.9V)
Capacitor Performance
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MLCC
Simulation modelestimating low ESL
Before: without Capacitors After with 6 Capacitors
Source Ground Resonancewith different Capacitors
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Before without Capacitors After with 6 Capacitors
Impedances
MLCC(6 Components )
Far Field
Impedance Plot of different CapacitorZ Plot (<1GHz)
Original
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Original
Simulation model(PED)
Good!!
MLCC(6 Components )
1 Components
Far Field Emission Plot for different Cap Parts
Original
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Simulation model(PED)
Good!!1 Components
MLCC(6 Components )
Original
Comparison of surface voltage distributionwhen frequency is swept
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1 ComponentsGood!!
Simulation model(PED)
MLCC(6 Components )
Conclusion
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• Panasonic has adapted Ansoft SIwavesolution to nail down the expected problembefore the actual board production.
• This seminar is showing the typical steps toreduce the unnecessary noise caused bySource and Ground bounce.
• By the use of Ansoft SIwave, Panasonic isnot just making robust board, but also toimprove their components to be best suited
for the noise reduction and emission fromthe board,