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Structural and Photoelectrochemical Characterization of Gallium Phosphide Semiconductors Modified with Molecular Cobalt Catalysts by ANNA MARY BEILER A Dissertation Presented in Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy Approved July 2018 by the Graduate Supervisory Committee: Gary F. Moore, Co-chair Thomas A. Moore, Co-chair Kevin E. Redding James P. Allen ARIZONA STATE UNIVERSITY December 2018

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Page 1: Structural and Photoelectrochemical Characterization of ...grants, travel resources, and teaching appointments. Ellie and Michael Ziegler generously sponsored me through the Phoenix

Structural and Photoelectrochemical Characterization of Gallium Phosphide

Semiconductors Modified with Molecular Cobalt Catalysts

by

ANNA MARY BEILER

A Dissertation Presented in Partial Fulfillment

of the Requirements for the Degree

Doctor of Philosophy

Approved July 2018 by the

Graduate Supervisory Committee:

Gary F. Moore, Co-chair

Thomas A. Moore, Co-chair

Kevin E. Redding

James P. Allen

ARIZONA STATE UNIVERSITY

December 2018

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ABSTRACT

The molecular modification of semiconductors has applications in energy

conversion and storage, including artificial photosynthesis. In nature, the active sites of

enzymes are typically earth-abundant metal centers and the protein provides a unique

three-dimensional environment for effecting catalytic transformations. Inspired by this

biological architecture, a synthetic methodology using surface-grafted polymers with

discrete chemical recognition sites for assembling human-engineered catalysts in three-

dimensional environments is presented. The use of polymeric coatings to interface cobalt-

containing catalysts with semiconductors for solar fuel production is introduced in

Chapter 1. The following three chapters demonstrate the versatility of this modular

approach to interface cobalt-containing catalysts with semiconductors for solar fuel

production. The catalyst-containing coatings are characterized through a suite of

spectroscopic techniques, including ellipsometry, grazing angle attenuated total reflection

Fourier transform infrared spectroscopy (GATR-FTIR) and x-ray photoelectron (XP)

spectroscopy. It is demonstrated that the polymeric interface can be varied to control the

surface chemistry and photoelectrochemical response of gallium phosphide (GaP) (100)

electrodes by using thin-film coatings comprising surface-immobilized pyridyl or

imidazole ligands to coordinate cobaloximes, known catalysts for hydrogen evolution.

The polymer grafting chemistry and subsequent cobaloxime attachment is applicable to

both the (111)A and (111)B crystal face of the gallium phosphide (GaP) semiconductor,

providing insights into the surface connectivity of the hard/soft matter interface and

demonstrating the applicability of the UV-induced immobilization of vinyl monomers to

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a range of GaP crystal indices. Finally, thin-film polypyridine surface coatings provide a

molecular interface to assemble cobalt porphyrin catalysts for hydrogen evolution onto

GaP. In all constructs, photoelectrochemical measurements confirm the hybrid

photocathode uses solar energy to power reductive fuel-forming transformations in

aqueous solutions without the use of organic acids, sacrificial chemical reductants, or

electrochemical forward biasing.

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DEDICATION

for my family

to Mom, for loving me unconditionally

to Dad, for imparting the joy of learning

and to Leon, who understands the significance of this journey

“As we are a doomed race, chained to a sinking ship, as the whole thing is a bad joke, let

us, at any rate, do our part; mitigate the suffering of our fellow-prisoners; decorate the

dungeon with flowers and air-cushions; be as decent as we possibly can.”

― Virginia Woolf, Mrs. Dalloway

“There's nothing left except to try.”

― Madeleine L'Engle, A Wrinkle in Time

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ACKNOWLEDGMENTS

This dissertation has been guided by Gary F. Moore, who introduced me to the field of

solar fuels and personally taught me many lab techniques and key concepts in

electrochemistry and solar energy conversion. Tom Moore’s work inspired me to pursue

research in the field of artificial photosynthesis, and he has been invaluable in supporting

and mentoring me throughout graduate school. My committee members, Kevin Redding

and Jim Allen, gave much-appreciated insight and encouragement along the way.

The NSF IGERT-SUN program provided funding and training in interdisciplinary aspects

of solar energy conversion, and Wim Vermaas and Anna Keilty were an indispensable

part of the experience. My IGERT-SUN peers challenged me intellectually and

introduced me to new scientific and engineering concepts (including fermentation studies

with Joe Laureanti). The ASU School of Molecular Sciences and the GPSA provided

grants, travel resources, and teaching appointments. Ellie and Michael Ziegler generously

sponsored me through the Phoenix ARCS Foundation, and the women of the

International Chapter of the P.E.O. Sisterhood graciously invited me into their lives.

The staff at ASU has been wonderfully responsive and helpful in my research. Special

thanks go to Tim Karcher for help with XPS experiments and to Diana Convey for

teaching me ellipsometry techniques. My colleagues in the G. F. Moore lab have been

invaluable in my day-to-day life. I cannot imagine my time at ASU without Diana

Khusnutdinova. For years we shared almost every detail of our working lives with each

other, as well as countless cups of coffee and tea. Brian Wadsworth is always down for

impromptu lab karaoke, and his recurring loan of my Bard electrochemistry textbook has

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definitely paid off. Edgar Reyes has a quiet assurance and dedication to organic

synthesis. I was privileged to work with several undergraduates: Samuel Jacob, Avraham

Echeverri, and Sylvia Nanyangwe, as well as Ahlea Reyes, a high school student. It was a

pleasure collaborating with Minseob Koh at the Scripps Research Institute and Jim

Thorne at Boston College. Thanks to Jim for great discussions about impedance

spectroscopy and the general meaning of life. Natalia H. von Reitzenstein is an amazing

friend and all-around efficacious woman. Elise Pagel reminds me how fortunate I am to

be in graduate school. I have watched James Engeln go through medical school without

complaint, and his steadfast cheerfulness inspires optimism. Isaac Roll has shown me

Arizona through a local’s eyes and knows how to appreciate an old country tune. Susan

Fisher-Shetler still makes me laugh harder than anyone else.

My mom, Rachel Beiler, has taught me resilience, hospitality, and an enduring love of

coffee. Her warmth and love are all-encompassing. My dad, Ben Beiler, taught me to

love books and encouraged me to think critically. Both of my parents have a curiosity

that has led them to new and sometimes uncomfortable places, and their courage propels

me to keep pushing boundaries.

Leon Leid, my lion of a partner, has been my fierce advocate and strongest supporter

throughout graduate school. His love of the Arizona desert took me on overnight hikes

and motorcycle escapades to remote wilderness areas. He kept me fed and watered,

listened to me tirelessly, gave stellar advice, and encouraged me to keep going through

the hard times. His insatiable curiosity inspires me to never stop exploring. I look forward

to continuing our adventures together.

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TABLE OF CONTENTS

Page

LIST OF TABLES ................................................................................................................ viii

LIST OF FIGURES ................................................................................................................. ix

CHAPTER

1 INTRODUCTION .................................................................................................. 1

1.1 Biological Inspiration ....................................................................................... 2

1.2 Photoelectrochemical Approach ....................................................................... 4

1.3 Molecular Catalysts for Hydrogen Production ................................................. 5

1.4 Surface-Immobilized Catalysts at Semiconductors .......................................... 7

1.5 Examples of Molecular Modification of Photocathodes ................................ 10

1.6 Prospects in the Molecular Modification of Semiconductors ........................ 12

1.7 References ........................................................................................................ 14

2 POLYVINYLIMIDAZOLE AND POLYVINYLPYRIDINE GRAFTS ON

GALLIUM PHOSPHIDE FOR COBALOXIME IMMOBILIZATION ........... 19

2.1 Introduction ...................................................................................................... 20

2.2 Results and Discussion ................................................................................... 24

2.3 Conclusions ..................................................................................................... 39

2.4 Experimental Methods .................................................................................... 40

2.5 References ........................................................................................................ 45

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CHAPTER Page

3 SOLAR HYDROGEN PRODUCTION USING MOLECULAR CATALYSTS

IMMOBILIZED ON GALLIUM PHOSPHIDE (111)A AND (111)B

POLYMER-MODIFIED PHOTOCATHODES ................................................. 49

3.1 Introduction ...................................................................................................... 50

3.2 Results and Discussion ................................................................................... 52

3.3 Conclusions ..................................................................................................... 65

3.4 Experimental Methods .................................................................................... 66

3.5 References ........................................................................................................ 72

4 COBALT PORPHYRIN-POLYPYRIDYL SURFACE COATINGS FOR

PHOTOELECTROSYNTHETIC HYDROGEN PRODUCTION .................... 76

4.1 Introduction ...................................................................................................... 77

4.2 Results and Discussion ................................................................................... 79

4.3 Conclusions ..................................................................................................... 90

4.4 Experimental Methods .................................................................................... 91

4.5 References ........................................................................................................ 94

Complete Bibliography ................................................................................................. 98

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LIST OF TABLES

Table Page

Table 2.1 N 1s Binding Energies (eV) .............................................................................. 26

Table 2.2 PEC Characteristics .......................................................................................... 34

Table 3.3 PEC Characteristics .......................................................................................... 63

Table 4.4 PEC Characteristics .......................................................................................... 89

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LIST OF FIGURES

Figure Page

Figure 1.1. Schematic diagram representing the movement of electrons following

illumination in photosystem II during the process of oxygenic photosynthesis. ................ 2

Figure 1.2. Graph showing the reduction potential range of an array of iron enzymes.

Adapted from Ref. 11. ........................................................................................................ 3

Figure 1.3. (left) Photo of a semiconductor working electrode in operation. (right) Photo

of a customized photoelectrochemical cell, including a platinum counter electrode, a

Ag/AgCl reference electrode, a GaP working electrode, and a quartz window. ................ 5

Figure 1.4. Conduction band (top bar) and valence band (bottom bar) positions vs NHE

of GaP (Eg = 2.3 eV), GaAs (1.4 eV), InP (Eg = 1.3 eV) and Si (Eg = 1.1 eV) as a function

of maximum current density under AM 1.5 illumination. The dotted and dashed lines

indicate the reversible potential of the H+/H2 and O2/H2O half reactions, respectively.

Adapted from Krawicz et. al ............................................................................................... 6

Figure 1.5. Schematic of a cobaloxime catalyst immobilized onto GaP through a

polypyridine interface. ...................................................................................................... 11

Figure 2.6. The air mass 1.5 global tilt solar flux spectrum (solid) and the transmission

spectrum of GaP (dashed). The shaded grey area shows the integrated region of the solar

spectrum from 280 nm up to the band gap of GaP. .......................................................... 21

Figure 2.7. Schematic representation of the attachment method used to assemble

cobaloxime-modified photocathodes. ............................................................................... 23

Figure 2.8. XP survey spectrum of (left) PVIlGaP and (right) ColPVIlGaP. ................... 25

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Figure Page

Figure 2.9. N 1s core level XP spectra of (top) PVIlGaP and (bottom) PVPlGaP. The

solid blue (b) and solid dark blue (c) lines represent the component fit of the imine

nitrogen, and the dashed blue (a) line the component fit of the amine nitrogen. The circles

represent the spectral data, the gray line is the linear background, and the black line the

overall fit. .......................................................................................................................... 26

Figure 2.10. N 1s core level spectra of (top) ColPVIlGaP and (bottom) ColPVPlGaP. The

solid blue (b) and solid dark blue (c) lines are the component fits for the unbound imine,

the dotted blue line (a) the component fit for the unbound amine, the solid red (f) and

solid dark red (h) lines the component fit for the bound imine, and the dotted red line (e)

the component fit for the bound amine. The dashed red (d) and dashed dark red (g) line

are the component fits for the glyoximate contributions. The circles represent the spectral

data, the gray line is the Shirley background, and the black line is the overall fit. .......... 28

Figure 2.11. XP spectrum of the Co 2p region of ColPVIlGaP. Circles are the spectral

data, and the solid lines represent the background (gray), and component fit (red). ........ 29

Figure 2.12. GATR-FTIR spectra of PVIlGaP (blue) and PVPlGaP (dotted dark blue)

grafted onto gallium phosphide, as well as unmodified GaP (dashed black). Spectra are

normalized for comparison. .............................................................................................. 30

Figure 2.13. (a) FTIR transmission spectra of Co(dmgH)2Cl2 in KBr (green),

Co(dmgH)2(Py)Cl in KBr (dashed dark red), and Co(dmgH)2(meIm)Cl in KBr (red), as

well as (b) GATR-FTIR absorbance spectra of ColPVIlGaP (red), ColPVPlGaP (dashed

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Figure Page

dark red), and GaP following a fresh HF etch (dashed black). Insets show the NO− region.

........................................................................................................................................... 31

Figure 2.14. Spectra obtained from ellipsometry measurement (red) of PVIlGaP at 69°

(top) and 74° (bottom) and model fit to data (black dash). ............................................... 32

Figure 2.15. Linear sweep voltammograms of PVPlGaP (dark blue), PVIlGaP (blue),

ColPVPlGaP (dark red) and ColPVIlGaP (red) working electrodes at pH 7 in the dark

(dotted lines) and with 100 mW cm-2 illumination (solid and dashed lines). An

unmodified GaP electrode under illumination is shown for comparison (black). ............ 34

Figure 2.16. Gas chromatogram of 5 mL of headspace before (black dash) and after (red)

bulk electrolysis of ColPVPlGaP working electrodes at pH 7 with 100 mW cm-2

illumination for 1 hour at 0 V vs. RHE. ............................................................................ 35

Figure 2.17. Cyclic voltammograms of Co(dmgH)2(meIm)Cl (green) and

Co(dmgH)2(Py)Cl recorded in 0.1 M tetrabutylammonium hexafluorophosphate

in acetonitrile at a scan rate of 100 mV s-1 with a glassy carbon working electrode at

room temperature and ferrocene as an internal standard with E1/2 taken as 0.40 V vs NHE.

Data are normalized for comparison. Data collected by Samuel Jacob. ........................... 36

Figure 3.18. Schematic of cobaloxime linked to either the GaP(111)A face or the GaP

(111)B face through surface-grafted polyvinylimidazole. ................................................ 51

Figure 3.19. FTIR transmission spectra of (a and c) N-vinylimidazole monomer in KBr

(blue) as well as a powder sample of the model cobaloxime catalyst,

Co(dmgH)2(meIm)Cl, in KBr (red). GATR-FTIR absorbance spectra of (b) the (111)A-

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Figure Page

face and (d) (111)B-face of unmodified GaP (black dash) polyvinylimidazole-grafted

GaP (blue) and cobaloxime-modified GaP (red). The spectra shown in parts a and c are

identical and included to facilitate comparisons. .............................................................. 54

Figure 3.20. XP spectra of the Ga 2p (left) and P 2p (right) regions of unmodified GaP

(111)A (top) and GaP(111)B (bottom). The circles are the spectral data, and the solid

lines represent the background (gray), component fit (green), and overall fit (black). .... 56

Figure 3.21. XP spectra of the Ga 2p (left) and P 2p (right) regions of polymer-modified

GaP (111)A (top) and GaP(111)B (bottom). The circles are the spectral data, and the

solid lines represent the background (gray), component fit (blue), and overall fit (black).

........................................................................................................................................... 57

Figure 3.22. N 1s core level spectra of (a) PVIlGaP(111)A, (b) ColPVIlGaP(111)A, (c)

PVIlGaP(111)B, and (d) ColPVIlGaP(111)B. Circles represent the spectral data. Solid

and dash lines are background (gray), component (red or blue), and overall (black) fits to

the experimental data. ....................................................................................................... 58

Figure 3.23. Linear sweep voltammograms of working electrodes using GaP substrates

with the varied properties and illumination conditions..................................................... 61

Figure 3.24. Linear sweep voltammograms of (a) GaP(111)A and (b) GaP(111)B

working electrodes following polyvinylimidazole grafting (blue) and cobaloxime

attachment (red). All measurements were performed at pH 7 in the dark (dashed-dotted

lines) or under 100 mW cm−2 illumination (solid lines). .................................................. 62

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Figure Page

Figure 3.25. Three-electrode electrolysis measurements using cobaloxime-modified

GaP(111)A (dashed) and cobaloxime-modified GaP(111)B (solid) working electrodes

polarized at 0 V vs RHE. All measurements were performed at pH 7 under 100 mW cm−2

illumination. ...................................................................................................................... 64

Figure 4.26. Voltammograms of 5,10,15,20-tetra-p-tolylporphyrin cobalt(II) (CoTTP)

recorded in 0.1 M tetrabutylammonium hexafluorophosphate in dimethylformamide and

0 mM tosic acid (green solid line), 10 mM tosic acid (blue dashed line) or CO2 (black

dashed line) at a scan rate of 250 mV s-1 using a glassy carbon working electrode at room

temperature and ferrocene as an internal standard. Data collected by Diana

Khusnutdinova. ................................................................................................................. 79

Figure 4.27. (left) Schematic representation of the synthetic method used to prepare the

PPy|GaP and CoTTP|PPy|GaP samples. (right) GATR-FTIR absorbance spectra of the (a)

1700-950 cm-1 region of unfunctionalized GaP (black), PPy|GaP (blue), and

CoTTP|PPy|GaP (purple), including (b) an expanded plot of the 1022-987 cm-1 region in

spectra of CoTTP|PPy|GaP. .............................................................................................. 81

Figure 4.28. N 1s core level XP spectra of unfunctionalized GaP (black) and PPy|GaP

(blue). ................................................................................................................................ 84

Figure 4.29. (a) Molecular structure of a CoTTP unit coordinated to polypyridine. (b)

High-energy resolution XP spectrum of the N 1s region of CoTTP|PPy|GaP. Solid lines

represent the background (gray), component (blue, green, and red), and overall (black)

fits to the experimental data (circles). Coloring indicates the component area assigned to

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Figure Page

remnant pyridinic nitrogens (blue), porphyrin pyrrolic nitrogens bound to cobalt centers

(green), and pyridinic nitrogens bound to cobalt centers (red). (c) High-energy resolution

XP spectrum of the Co 2p3/2 region of CoTTP|PPy|GaP................................................... 85

Figure 4.30. (a) Chronoamperogram of a CoTTP|PPy|GaP working electrode polarized at

0 V vs RHE under alternating (200 mHz) non-illuminated and illuminated conditions. (b)

Linear sweep voltammograms of CoTTP|PPy|GaP working electrodes recorded in the

dark (dashed line) and under simulated 1-sun illumination (solid line). The dotted vertical

line at 0 V vs RHE represents the equilibrium potential of the H+/H2 couple. The

calculated HER activity per cobalt center is included on the right ordinate axis. (c) Gas

chromatograms of a 5 mL aliquot of the headspace drawn from a sealed PEC cell using a

CoTTP|PPy|GaP working electrode polarized at 0 V vs RHE before (dashed line) and

after (solid line) 30 min of AM1.5 illumination. All measurements were performed using

a three-electrode configuration in 0.1 M phosphate buffer (pH 7). .................................. 87

Figure 4.31. GATR-FTIR absorbance spectra showing the νCo-N region of the

CoTTP|PPy|GaP before photoelectrochemical characterization (top, purple), following

exposure to buffer (middle, dark red), and after photoelectrochemical characterization

(bottom, green). ................................................................................................................. 89

Figure 4.32. Linear sweep voltammograms of unfunctionalized GaP (black), PPy|GaP

(blue), and CoTTP|PPy|GaP (purple) working electrodes. Circles represent the maximum

power point. Dashed horizontal and dashed vertical lines represent the current density

and potential, respectively, at the maximum power points. .............................................. 90

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CHAPTER 1 INTRODUCTION

Portions of this work are excerpted with permission from:

Beiler, A. M.; Moore, G. F. Nat. Chem. 2017, 10, 3–4.

Copyright 2017 Springer Nature

Beiler, A. M.; Khusnutdinova, D.; Jacob, S. I.; Moore, G. F. Ind. Eng. Chem. Res. 2016,

55, 5306–5314.

Copyright 2016 American Chemical Society

Beiler, A. M.; Khusnutdinova, D.; Jacob, S. I.; Moore, G. F. ACS Appl. Mater. Interfaces

2016, 8, 10038–10047.

Copyright 2016 American Chemical Society

Beiler, A. M.; Khusnutdinova, D.; Wadsworth, B. L.; Moore, G. F. Inorg. Chem. 2017,

56, 12178–12185.

Copyright 2017 American Chemical Society

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1.1 Biological Inspiration

Biology provides inspiration for developing human-engineered systems to capture,

convert, and store solar energy in chemical bonds.1–6 In nature, photo-initiated redox

reactions drive the process of photosynthesis (Figure 1.1). Plants and other

photosynthetic organisms absorb sunlight and use the energy to carry out a series of

complex redox reactions and synthetic transformations, creating the foods we eat and

ultimately the fossil fuels that power our modern economies. In this context, sunlight acts

as a reagent in chemical reactions, and the products of the overall reaction store the sun’s

energy in the form of molecular bonds. Catalytic sites, providing relatively low-energy

pathways for carrying out the overall chemical transformations, facilitate the formation of

these bonds and must be reduced or oxidized at least twice for each successful

completion of a reaction cycle.

Figure 1.1. Schematic diagram representing the movement of electrons following

illumination in photosystem II during the process of oxygenic photosynthesis.

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In biological catalysis, enzymes use soft material interactions, including coordination to

amino acid residues along a protein scaffold, to provide appropriate three-dimensional

environments for controlling the catalytic activity and selectivity of metal centers

composed of earth-abundant elements.7,8 This, in accordance with the Sabatier principle,

results in examples of enzymes that have exceptionally high activities and exquisite

selectivity. The reduction potentials of the active sites of iron-based enzymes span a volt,

modulated by the identity and number of coordinating ligands, charges on the

surrounding protein residues, and/or solvent accessibility (Figure 1.2).9,10 In a similar

vein, a focus on the role of secondary coordination sphere interactions has emerged as a

bioinspired design theme in synthetic molecular catalysis, providing improved routes for

binding substrates, lowering transition state energies along a reaction coordinate, and

releasing products.11,12

Figure 1.2. Graph showing the reduction potential range of an array of iron enzymes.

Adapted from Ref. 11.

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1.2 Photoelectrochemical Approach

Future clean energy scenarios require effective methods for converting and storing

intermittent energy sources.13,14 Taking inspiration from the solar-to-fuels paradigm in

biology, scientists have set out to re-design photosynthesis for industrial applications

using top-down as well as bottom-up strategies. In this context, photoelectrochemical

(PEC) fuel production using sunlight as an energy input has emerged as a promising

storage option that could be integrated with our existing petroleum-based infrastructure.15

In this approach, semiconductors are used as the light-absorbing components to drive a

thermodynamically uphill fuel-forming reaction. In one PEC application, the overall

water-splitting reaction uses solar energy to provide the standard change in Gibbs free

energy of 4.92 eV (475 kJ mol-1) (Equation 1.1).

2𝐻2𝑂 (𝑙) → 2𝐻2 (𝑔) + 𝑂2(𝑔) (1.1)

As a four-electron process, the corresponding standard potential is Ε0 = -1.23 V.

Although a PEC water-splitting device is composed of 2 electrodes, a cathode at which

the hydrogen evolution reaction (HER) takes place and an anode at which the oxygen

evolution reaction (OER) occurs, component electrodes may be studied individually in a

three-electrode setup for optimization of the individual reactions (Figure 1.3). The work

presented in this dissertation focuses on homogeneous-heterogeneous catalysis at a

molecular-modified cathode.

Semiconductors used for reductive processes are typically p-type semiconductors, in

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Figure 1.3. (left) Photo of a semiconductor working electrode in operation. (right) Photo

of a customized photoelectrochemical cell, including a platinum counter electrode, a

Ag/AgCl reference electrode, a GaP working electrode, and a quartz window.

which addition of a dopant shifts the energy of the Fermi level closer to the valence band

energy, resulting in a material in which electrons are the minority carrier. The optical

band gap, Eg, of the semiconductor is one of the factors that determine the maximum

photocurrent density, with smaller band gap materials capable of generating greater

photocurrents (Figure 1.4).17 Commonly used semiconductors for photocathode materials

include silicon, indium phosphide, gallium arsenide, and gallium phosphide, as they have

energy band gaps suitable for visible light absorption. In addition, the conduction bands

of these materials are thermodynamically poised to drive H2 evolution or CO2 reduction.

1.3 Molecular Catalysts for Hydrogen Production

At the photocathode of a water splitting cell, the hydrogen evolution half-reaction occurs

(Equation 1.2):

2𝐻+ + 2𝑒− → 𝐻2 (1.2)

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Figure 1.4. Conduction band (top bar) and valence band (bottom bar) positions vs NHE

of GaP (Eg = 2.3 eV), GaAs (1.4 eV), InP (Eg = 1.3 eV) and Si (Eg = 1.1 eV) as a function

of maximum current density under AM 1.5 illumination. The dotted and dashed lines

indicate the reversible potential of the H+/H2 and O2/H2O half reactions, respectively.

Adapted from Krawicz et. al.16

The formation or dissociation of hydrogen at an electrode surface can present relatively

large energy barriers. If an applied electrochemical potential greater than the

thermodynamic potential of the reaction is required to overcome energetic barriers, the

reaction operates at an overpotential. Therefore, an active area of research in the field of

the photoelectrochemical generation of solar fuels focuses on strategies to interface

semiconductors with appropriate electrocatalysts to reduce the overpotential requirements

for generating fuels and industrially relevant chemical feedstocks.17–21 While the precious

metal platinum is the state-of-the-art catalyst for HER, there has been increased interest

in employing earth-abundant metals.22–26 Advances in this field include the design and

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study of bio-inspired catalysts, and there is ongoing interest in controlling reaction

networks in complex environments.27

Unlike traditional surface electrocatalysts such as platinum, which are an integral part of

the electrode and contribute to the Fermi level, molecular catalysts are discrete entities

with distinct chemical and electronic properties.5 Molecular catalysts provide local three-

dimensional environments for binding substrates, lowering transition-state energies along

a reaction coordinate, and releasing products. Their unique selectivity and ability to lower

energy requirements for achieving chemical transformations make them attractive targets

for integration with solid-state substrates for technological applications, including

electrochemical and photoelectrochemical activation for generating fuel and other

valuable chemical products.

1.4 Surface-Immobilized Molecular Catalysts at Semiconductors

Molecular catalysts powered by visible-light-absorbing semiconductors represent one

approach in artificial photosynthesis to developing an integrated system for generating

solar fuels.20,28–31 However, finding new ways to immobilize catalysts onto

semiconductor surfaces and characterize the resultant hard-to-soft matter interfaces

remains a major challenge.20 Addressing this obstacle provides an improved fundamental

understanding of catalysis in complex environments and enables technological

advancements that depend on the precise control and selectivity of molecular

components.

Molecular catalysis of the HER reaction can proceed via a homolytic or heterolytic

pathway. In a homolytic pathway, the product is formed through a symmetrical

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bimolecular chemical step. Conversely, a heterolytic pathway involves the reaction of

chemically distinct species. For example, the mechanism of HER catalysis by

cobaloximes has been proposed to occur via several pathways.32–34 After reduction of the

cobalt center from Co(III) to Co(I), the Co(I) species is protonated to generate a cobalt

hydride, HCo(III). In the homolytic pathway, two cobalt hydride species react with one

another to release hydrogen. Alternately, the HCo(III) generated in the initial protonation

step can react with an acid in solution to generate hydrogen through a heterolytic

pathway. It has also been proposed that the HCo(III) can be further reduced to HCo(II),

which can then proceed to generate H2 through a homolytic or heterolytic pathway.

Plotting the exchange current density of various metals for HER versus the metal-hydride

bond strength yields a volcano plot, in which a maximum rate of exchange current

density is reached at intermediate metal-hydride bond strengths, which stabilize the bond

but also allow the product to be released. The mechanism through with HER occurs has

important implications for surface-immobilized catalysts. If the optimal catalytic pathway

is homolytic, the surface-attached catalysts must be close enough to each other and

oriented in such a way as to favor the interaction of two protonated metal centers.

Addition of a catalyst to the electrode surface may provide a lower energy pathway for a

reaction to occur, and/or increase the efficiency of charge transfer across the interface by

capturing minority carriers at the surface. However, it is often unclear whether the role of

surface-immobilized catalysts is confined to improving the rate of interfacial electron

transfer, as it can also serve to alter the surface energetics that in turn affect surface

recombination rates.35-37 Since electrochemical measurements give information on both

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the thermodynamics and kinetics of a reaction, it can be difficult to clearly assign

whether the role of the catalyst in improved photoelectrochemical performance is to

change the surface energetics or to provide a lower energy pathway for the reaction.38-41

Nonetheless, thin catalyst layers have been reported to form adaptive

semiconductor/electrocatalyst junctions where the catalysts serve as an independently

tunable entity whose redox states changes the effective (non-equilibrium) barrier height,

resulting in higher photovoltages and efficiencies relative to impermeable

electrocatalysts. 42,43

In integrating molecular catalysts to semiconductors, several requirements must be

considered. A prevailing paradigm in surface catalysis suggests a higher loading of active

sites is crucial for optimizing reaction conditions. This parameter can be addressed by

using nano- or meso-structured substrates, or by employing three-dimensional

environments for the catalyst.44,45 Conversely, an emerging strategy is that employing

low catalyst coverage for achieving accumulative charge separation could increase the

yields of accumulated redox equivalents.46 In either case, the surface coating should be

optimized so that the catalyst loading does not hinder charge transport or block light

absorption.47 Colored materials, including catalysts, can screen an underpinning

semiconductor by “parasitically” absorbing photons that would otherwise contribute to

production of photocurrent. Conversely, colored materials are also capable of extending

the light harvesting capabilities of a semiconductor through dye sensitization

mechanisms.47,48 Finally, typical benchmarking parameters such as turnover number

(TON) and turnover frequency (TOF) used for homogeneous catalysts are not as easily

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applied to heterogeneous catalysis since it can be difficult to determine the number of

catalytically active sites.

Immobilization of catalysts at solid supports to form heterogeneous architectures

provides several advantages. Surface immobilization allows catalysts that are normally

not soluble in aqueous conditions to be employed in aqueous environments. By

integrating a catalyst with a surface, less material is needed as all the catalyst is in close

proximity to the electrode and can be activated more readily. In addition, immobilization

may improve the stability of a molecular catalyst. For example, a cobalt diamine-dioxime

cobalt catalyst grafted onto carbon nanotubes showed improved stability for hydrogen

evolution compared to the solution counterpart, which may result from the disfavoring of

decomposition pathways involving the interaction of two catalysts.23

1.5 Examples of Molecular Modification of Photocathodes

Molecular modification of surfaces promises enhanced selectivity and tunability for

catalyzing chemical transformations at solid supports, leading researchers to investigate

strategies to effectively immobilize molecular catalysts onto semiconductor surfaces and

characterize the resultant modified surfaces. Reports describing strategies to directly

integrate molecular catalysts for hydrogen production to visible-light-absorbing

semiconductors are limited, but include: [Fe2S2 (CO)6] adsorbed onto indium phosphide

nanocrystals,49 trinuclear molybdenum cluster salts drop-cast on Si(100)50

ferrocenophane-containing polymers deposited on Si(100) and (111),51 modified Dubois-

type nickel bisdiphosphine catalysts covalently attached to amine-modified Si(100) and

GaP(100),52 Negishi coupling of phosphine ligands onto Si(111) followed by

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metalation,53 a metal-organic surface composed of a cobalt dithiolene polymer dropcast

onto Si(100),54 and cobaloxime catalysts adsorbed onto a TiO2-coated GaInP2

semiconductor.55 Some of the cathode assemblies reported to date require an

electrochemical bias poised negative of 0 V vs the reversible hydrogen electrode (0 V vs

RHE) (i.e., an applied cathodic polarization beyond the thermodynamic potential of the

H+/H2 half-reaction under the conditions tested to produce hydrogen). In addition, some

require extreme pH operating conditions or nonaqueous conditions using relatively strong

organic acids as a proton source, features that may be undesirable in the context of large-

scale deployment, environmental impact, and biocompatibility. Although immobilization

via drop-casting methods and other electrostatic-based deposition methods offer ease of

assembly, the development of more precise surface attachment chemistries could offer

additional control over diffusion, migration and convection dynamics, orientation of

attached components, surface loading, passivation of the substrate, and interfacial

energetics.9,23,56-65

UV-induced grafting has been used to polymerize 4-vinylpyridine onto p-type GaP to

provide surface-attached pyridine ligands for subsequent assembly of cobaloxime

catalysts (Figure 1.5).66 In this construct, the polymer coating of the GaP surface likely

provides protection against oxide layer passivation by restricting access to surface

GaP(100) sites while providing attachment sites for assembly of the catalysts. The Co-

functionalized photocathode produced 2.4 mA cm-2 of current density at 310 mV

underpotential under 100 mW cm-2 illumination at pH 7, an improved photoperformance

compared to the polyvinylpyridine-functionalized GaP photocathode, which required an

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Figure 1.5. Schematic of a cobaloxime catalyst immobilized onto GaP through a

polypyridine interface.

overpotential of 270 mV to achieve the same current density. This work was extended to

fluorinated cobaloximes, where a similar attachment strategy was used to

immobilize difluoroborylcobaloxime catalyst.67 The pH dependence of the

photoelectrochemical responses of fluorinated and non-fluorinated cobaloximes tested at

pH 7 or pH 4.5 was consistent with the electrochemical properties of the analogous non-

surface-attached catalysts.

1.6 Prospects in the Molecular Modification of Semiconductors

Controlling matter and information at the nanoscale presents a challenge for science and

the imagination.68 In this vein, integrated materials have been developed using a range of

surface functionalization chemistries,60,69,70 and recent advances in polymer chemistry

offer opportunities to tailor their structure and macromolecular properties.71,72 This

dissertation presents the characterization and photoelectrochemical characterization of

H O

NO

N

O

HO

N

N Cl

Co

N

m

N

n

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photocathodes with thin-film coatings. Surface chemistry utilizing molecular components

is used to build photoactive materials that include applications to artificial

photosynthesis as well as emerging solar-to-fuels technologies.73

By integrating gallium phosphide with molecules that are well known for efficient

catalysis, hybrid materials for photoelectrochemical catalytic transformations can be

made. The research findings presented in the following chapters extend the work

presented above, in which a polymeric brush serves as a structural interface between the

soft molecular components and the semiconductor surface. It is shown that exchange of

the polymeric interface from polyvinylpyridine to polyvinylimidazole results in distinct

spectroscopic signatures associated with the unique molecular surface environments of

the polymer films, and that the macroscopic photoelectrochemical characteristics are also

influenced by the choice of polymer. Polyvinylpyridine can be UV-grafted to both the A

(Ga-rich) and B (P-rich) sides of GaP(111), providing an immobilization method for

cobaloximes at multiple crystal faces and yielding insights on the molecular connectivity

of the polymer to GaP. The polymeric interface can also serve to coordinate cobalt

porphyrin hydrogen evolution catalysts, and post-photoelectrochemical analysis shows

that the catalysts retain their molecular integrity. Throughout the dissertation,

structure/function relationships at interfaces are explored through surface spectroscopies

and photoelectrochemical techniques, advancing knowledge of relationships between the

molecular structures at surfaces and the resultant macroscopic properties. Thus, this work

presents novel constructs not only for generating solar fuels, such as hydrogen, but also

for studying catalysis in complex environments at hard/soft matter interfaces.

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and Photopolymerization (SIPGP). Langmuir 2009, 25 (17), 2225–2231.

(71) Kim, M.; Schmitt, S.; Choi, J.; Krutty, J.; Gopalan, P. From Self-Assembled Monolayers to

Coatings: Advances in the Synthesis and Nanobio Applications of Polymer Brushes. Polymers

(Basel). 2015, 7 (7), 1346–1378.

(72) Azzaroni, O. Polymer Brushes Here, There, and Everywhere: Recent Advances in Their Practical

Applications and Emerging Opportunities in Multiple Research Fields. J. Polym. Sci. Part A Polym.

Chem. 2012, 50 (16), 3225–3258.

(73) Nocera, D. G. The Artificial Leaf. Acc. Chem. Res. 2012, 45 (5), 767–776

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CHAPTER 2 POLYVINYLIMIDAZOLE OR POLYVINYLPYRIDINE GRAFTS

ON GALLIUM PHOSPHIDE FOR COBALOXIME IMMOBILIZATION

Portions of this work are excerpted with permission from:

Beiler, A. M.; Khusnutdinova, D.; Jacob, S. I.; Moore, G. F. Ind. Eng. Chem. Res. 2016,

55 (18), 5306–5314.

Copyright 2016 American Chemical Society

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2.1 Introduction

Chapters 2-4 illustrate how the modular approach to semiconductor functionalization

allows for versatility in the choice of component parts- polymer, semiconductor, or

catalyst- and focus on surface characterization of the surface assemblies. Distinct

structural details of the film composition and connectivity in the catalytic coating are

revealed, illustrating the ability to effect molecular-level changes at the surface, and the

photoelectrochemical (PEC) performance of the constructs is evaluated. In this chapter, it

is shown that cobaloxime catalysts for hydrogen evolution can be immobilized at gallium

phosphide through a polyvinylpyridine (PVP) or polyvinylimidazole (PVI) interface.

Structural characterization of the modified wafers by ellipsometry as well as X-ray

photoelectron (XP) and grazing angle attenuated total reflection Fourier transform

infrared (GATR-FTIR) spectroscopies is used to evaluate the success of the surface

attachment strategy and gain insights into the chemical composition of the surface

coatings. PEC characterization, including gas chromatography (GC) analysis of the

photochemical products, verifies the functionality of the hybrid constructs.

2.1.1 Gallium Phosphide

GaP is a III-V semiconductor used in optoelectronic applications with an indirect band

gap of 2.26 eV and a direct band gap of 2.78 eV (Figure 2.6). Additionally, GaP has

promising features as a candidate material for applications in solar fuels generation,

including a capacity for achieving relatively large photovoltages. The energetic

positioning of the conduction band (~ -1 V vs NHE) more than satisfies the

thermodynamic requirement for driving the hydrogen evolution reaction (HER),

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Figure 2.6. The air mass 1.5 global tilt solar flux spectrum (solid) and the transmission

spectrum of GaP (dashed). The shaded grey area shows the integrated region of the solar

spectrum from 280 nm up to the band gap of GaP.

prompting researchers to investigate this material for PEC applications since the 1970s.1–9

However, its performance is limited by photocorrosion in aqueous conditions and surface

defect sites that hinder efficient transfer of photogenerated minority carriers at the

semiconductor|liquid junction.4 In this chapter, p-type GaP(100) substrates serve as

commercially available materials for developing a catalyst attachment chemistry for

integrating cobaloximes to the semiconductor via a polymeric interface.

2.1.2 Polymeric Interface

The constructs exploit the properties of olefins to undergo self-initiated photografting and

photopolymerization at semiconductor surfaces as well as a variety of other hydrogen- or

hydroxyl-terminated materials.10–19 The UV-induced surface grafting reaction has been

used to graft monolayers or polymer brushes onto conductive and semiconductive

400 600 800 1000 1200 14000

1x1014

2x1014

3x1014

4x1014

5x1014

Flu

x (

Ph

oto

ns s

-1 c

m-2 n

m-1)

Wavelength (nm)

Tra

nsm

issio

n

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substrates, and several mechanisms have been proposed for the reaction.20 In the self-

initiated photografting and photopolymerization (SIPGP) mechanism, the neat monomer

acts as a photosensitizer, absorbs a photon and is excited to a triplet state, which is in

equilibrium with a biradical species. The biradical species can react with a monomer in

solution, propagating radical polymerization. Alternately, the biradical species can

abstract a surface hydrogen atom, creating a radical surface site for surface-initiated

polymerization. In addition, a surface-initiated radical mechanism has been proposed for

the photografting reaction at silicon, in which incoming UV light cleaves the Si-H bond,

which has a bond strength of ~ 3.5 eV, therefore requiring UV light of < 350 nm.10,19,21–24

The Si radical site can then react with the β-carbon of an alkene to form a Si-C bond.

Finally, the α-carbon radical abstracts a hydrogen atom from a neighboring Si-H group,

and the surface reaction is propagated across the surface in a random walk to form an

alkylated monolayer.

Surface-initiated grafting can also occur under white light.25–29 Under these conditions,

the proposed mechanism occurs via nucleophilic attack by the alkene to a valence band

hole generated by photogenerated electron-hole separation. In a similar manner, UV

excitation can result in photoemission of an electron from the semiconductor to

solution,18 resulting in a persistent hole in the valence band subject to nucleophilic attack

by the alkene. The predominant mechanism contributing to surface grafting of alkenes

under UV light is ascribed to a photoemission process, as the lifetime of the hole is much

longer in the photoemission mechanism compared to the exciton mechanism.

In this work, UV-initiated surface grafting and polymerization are used to prepare PVI or

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Figure 2.7. Schematic representation of the attachment method used to assemble

cobaloxime-modified photocathodes.

PVP grafts (Figure 2.7). Post-polymerization modification is then used to direct and

assemble molecular catalysts onto built-in recognition sites– ligands– on the surface-

attached polymer. Thus, the polymeric brush serves as a structural interface between the

soft molecular catalysts and the hard semiconductor surface. To facilitate direct

comparisons between the PVI- and PVP-functionalized materials in the work reported

here, the grafts were assembled on GaP (100) wafers with identical physical properties

including doping conditions, resistivity, mobility, carrier concentration and etch pit

density (i.e., the wafers are cut from the same ingot).

2.1.3 Cobaloximes

Cobaloximes are a class of cobalt-containing catalysts known for catalyzing hydrogen

evolution in organic and aqueous conditions and have shown promise in electrocatalysis

N

GaP

PVP|GaP Co|PVP|GaP

Co|PVI|GaP

H O

NO

N

O

HO

N

N Cl

Co

N

m

N

n

N

N

H O

NO

N

O

HO

N

NCl

Co

m

n

N

N

N

n

n

N

N

H O

NO

N

O

HO

N

N Cl

Co

N

m

N

n

N

N

H O

NO

N

O

HO

N

NCl

Co

m

n

N

N

N

n

n

N

N

H O

NO

N

O

HO

N

N Cl

Co

N

m

N

n

N

N

H O

NO

N

O

HO

N

NCl

Co

m

n

N

N

N

n

n

N

N

N

N

H O

NO

N

O

HO

N

NCl

Co

m

n

N

N

PVI|GaP

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and solar-to-fuel applications. Since the first report of electrochemical hydrogen

evolution catalyzed by a fluorinated cobaloxime by Connolly and Espenson, cobaloximes

and their mechanism of catalysis have been extensively studied by chemical,

electrochemical, and photochemical means.30–42 Previous reports show that cobaloximes

can be assembled onto GaP via a polyvinylpyridine interface, resulting in a cathode

material that uses only photonic energy, and no external electrochemical forward biasing

or sacrificial electron donors, to generate a relatively stable current and associated rate of

hydrogen production in pH neutral aqueous solutions.43 In addition, treatment of the

PVP-functionalized GaP using cobaloxime catalyst precursors with a ligand macrocycle

that is modified at the molecular level has been shown to affect the PEC response to

illumination and pH observed at the construct level.44 Thus, the photoactivity of the

modified semiconductor can be influenced by changes to the ligand environment of the

attached cobalt complexes.

2.2 Results and Discussion

2.2.1 Wafer Preparation and Characterization

A two-step method is used to assemble catalysts at the semiconductor surface. First, UV-

induced grafting of the appropriate polymer to the GaP (100) surface yields

polyvinylimidazole-grafted GaP (PVIlGaP) or polyvinylpyridine-grafted GaP (PVPlGaP)

constructs. In the second step, wet chemical treatment of the polymer-modified surface is

used to assemble cobaloximes on the polymer graft. This chemical transformation

exploits the base-promoted ligand exchange of axial X-type chloride ligands on cobalt

catalyst precursors with pendent N-type ligands on the surface-grafted polymers, yielding

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cobaloxime-modified PVPlGaP (ColPVPlGaP) or cobaloxime-modified PVIlGaP

(ColPVIlGaP) (Figure 2.8). Analysis of the chemically modified surfaces using XP

spectroscopy provides evidence of successful functionalization with the desired

molecular connectivity. Survey spectra of the PVPlGaP and PVIlGaP samples show C, N

and O elements and cobaloxime-functionalized samples show additional C, O, Cl and Co

elements associated with attached cobaloximes (Figure 2.8). N 1s core level XP spectra

of polymer-functionalized GaP surfaces (Figure 2.9) present a single nitrogen feature

centered at 398.7 for PVPlGaP corresponding to the pyridyl nitrogens of the graft.

Conversely, N 1s core level spectra of PVIlGaP surfaces exhibit two distinct nitrogen

features centered at 398.3 and 400.2 and having a 1:1 spectral intensity ratio arising from

the two types of nitrogen environments in PVI,45–47 with the amine nitrogen feature at

higher binding energies than those assigned to imine nitrogen (Table 2.1).

Figure 2.8. XP survey spectrum of (left) PVIlGaP and (right) ColPVIlGaP.

1300 650 0

N1s

C1s

Binding Energy (eV)

Inte

nsity (

a.u

.)

Wide

Ga 3pP2p

Ga 2p

Ga LMM

1300 650 0

Ga 2p

Co 2p

O1s

N1sC1s

Cl 2p

Binding Energy (eV)

Inte

nsity (

a.u

.)

Wide

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Figure 2.9. N 1s core level XP spectra of (top) PVIlGaP and (bottom) PVPlGaP. The

solid blue (b) and solid dark blue (c) lines represent the component fit of the imine

nitrogen, and the dashed blue (a) line the component fit of the amine nitrogen. The circles

represent the spectral data, the gray line is the linear background, and the black line the

overall fit.

Table 2.1 N 1s Binding Energies (eV)

Construct Imine

nitrogen

Amine

nitrogen

Co-imine

nitrogen

Co-amine

nitrogen

Glyoximate

nitrogen

PVPlGaP 398.7 -- -- -- --

ColPVPlGaP 398.6 -- 400.6 -- 400.0

PVIlGaP 398.3 400.2 -- -- --

ColPVIlGaP 398.4 400.0 399.0 400.6 400.0

a

b

c

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The assembly of cobaloximes on the PVP or PVI grafts gives rise to additional nitrogen

features at higher binding energies in the N 1s core level spectra. Spectral fitting of the

XP data facilitates assignment of the individual contributions (Figure 2.10). For

ColPVIlGaP, a spectral contribution at 400.6 eV is assigned to pyridyl nitrogens on the

graft that are coordinated to cobalt centers of attached cobaloximes and the contribution

centered at 400.0 eV is indicative of the N 1s features of the cobaloxime glyoximate

ligands. The remnant contribution at 398.6 eV is assigned to pyridine units on the

polymer chains that are not coordinated to cobalt centers. For ColPVIlGaP surfaces,

assembly of Co centers to imidazole units on the polymer graft contribute to the peaks at

399.0 eV and 400.6 eV, while the contributions at 398.4 eV and 400.6 eV are assigned to

remnant imidazole nitrogens on the polymer that are not coordinated to cobalt centers.

The prominent peak at 400.0 eV is assigned to glyoximate nitrogens of the cobaloximes.

For both the ColPVIlGaP and ColPVPlGaP surfaces, the Co:Cl spectral intensity ratio is

1:1, corroborating the proposed synthetic mechanism in which one of the axial chloride

ligands on the Co-precursor complex is replaced with a nitrogen-containing ligand on the

polymer graft. In this mechanism, charge balance of the cobalt complex when replacing

chloride, an anionic X-type ligand, with a neutral L-type ligand is accounted for by the

base-promoted conversion of the dimethylglyoxime ligand to the dimethylglyoximate

monoanion. As anticipated, the Co 2p core level spectra signal shows the expected 15 eV

splitting and 2:1 ratio of the 2p3/2 and 2p1/2 peaks (Figure 2.11), consistent with the Co3+

oxidation state of the grafted complex.48,49 The collective information regarding the

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Figure 2.10. N 1s core level spectra of (top) ColPVIlGaP and (bottom) ColPVPlGaP. The

solid blue (b) and solid dark blue (c) lines are the component fits for the unbound imine,

the dotted blue line (a) the component fit for the unbound amine, the solid red (f) and

solid dark red (h) lines the component fit for the bound imine, and the dotted red line (e)

the component fit for the bound amine. The dashed red (d) and dashed dark red (g) line

are the component fits for the glyoximate contributions. The circles represent the spectral

data, the gray line is the Shirley background, and the black line is the overall fit.

a

b

c

e f

d

h g

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Figure 2.11. XP spectrum of the Co 2p region of ColPVIlGaP. Circles are the spectral

data, and the solid lines represent the background (gray), and component fit (red).

elemental identity and chemical composition obtained from XPS analysis provides

confirmation of the synthetic efforts.

Surface analysis using GATR-FTIR spectroscopy provides further structural

characterization of the modified GaP substrates, including direct observation of

vibrational modes associated with the grafted polymers and assembly of intact

cobaloxime complexes. FTIR spectra following the photochemical treatment of freshly

cleaned and etched GaP surfaces with 4-vinylpyridine or N-vinylimidazole show distinct

C-H and C-N modes in the 1400 to 1600 cm-1 range indicative of successful

polymerization, and unique from the C-H and C-N vibrations associated with monomeric

4-vinylpyridine or N-vinylimidazole (Figure 2.12). Additionally, there is a lack of the

pronounced feature at 1371 cm-1 associated with the C=C bond of the vinyl group

monomer50 and instead a peak at 1454 cm-1, indicative of the planar deformation

vibration of the CH2 groups along the polymer chain backbone, is observed.51

800 790 780 770 760

Inte

nsity (

a.u

.)

Co 2p

Binding Energy (eV)

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Figure 2.12. GATR-FTIR spectra of PVIlGaP (blue) and PVPlGaP (dotted dark blue)

grafted onto gallium phosphide, as well as unmodified GaP (dashed black). Spectra are

normalized for comparison.

Treatment of the polymer-grafted surfaces with a solution of the catalyst precursor,

Co(dmgH2)(dmgH)Cl2, gives rise to new vibrational modes on the surface that are

ascribed to the formation of intact cobaloxime catalyst. These modes are distinct from

those observed in the FTIR spectrum of the Co(dmgH2)(dmgH)Cl2 precursor but are

nearly identical to the vibrational modes observed in spectra of the model molecular

catalysts Co(dmgH)2(Py)Cl or Co(dmgH)2(meIm)Cl (Figure 2.13a). In particular,

measurements of the NO- stretching frequency of the cobaloxime-functionalized surfaces

provide direct spectroscopic evidence supporting assembly of the cobaloxime units at the

pendent pyridyl or imidazole sites of the polymer graft. For the Co(dmgH2)(dmgH)Cl2

precursor complex the NO- stretch occurs at 1225 cm-1, however for the model

cobaloximes Co(dmgH)2(Py)Cl and Co(dmgH)2(meIm)Cl, this mode is centered at 1240

or 1237 cm-1, respectively. FTIR spectra of the polymer-functionalized GaP surfaces

1700 1450 1200

Wavenumbers (cm-1)

Ab

so

rba

nce

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Figure 2.13. (a) FTIR transmission spectra of Co(dmgH)2Cl2 in KBr (green),

Co(dmgH)2(Py)Cl in KBr (dashed dark red), and Co(dmgH)2(meIm)Cl in KBr (red), as

well as (b) GATR-FTIR absorbance spectra of ColPVIlGaP (red), ColPVPlGaP (dashed

dark red), and GaP following a fresh HF etch (dashed black). Insets show the NO− region.

1275 1225

1700 1450 1200

Wavenumbers (cm-1)

% T

ran

sm

itta

nce

(a)

1700 1450 1200

Wavenumbers (cm-1)

Ab

so

rba

nce

(b)

1275 1225

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following wet chemical treatment with a solution of Co(dmgH2)(dmgH)Cl2 show a strong

NO- vibration at 1241 cm-1 for PVP-functionalized GaP and at 1240 cm-1 for PVI-

functionalized GaP (Figure 2.13b), values that closely match those of the model catalysts

within the 4 cm-1 resolution of the spectroscopic scans. Additionally, there is no

pronounced peak at 1225 cm-1, indicating that minimal to no precursor complex remains

in or on the cobaloxime-modified GaP following ultrasonic cleaning of the samples.

Thus, FTIR analysis indicates effective assembly of cobaloxime units using the built-in

recognition sites of the polymer grafts, in agreement with our surface analysis using XP

spectroscopy.

Information on the length of the PVP or PVI polymer grafts is provided by spectroscopic

ellipsometry measurements, yielding a PVP thickness of 10 nm and a PVI thickness of 6

nm on the GaP (100) substrates (Figure 2.14). Using these film thickness values, the

corresponding pyridyl and imidazole site density can be estimated given the bulk polymer

Figure 2.14. Spectra obtained from ellipsometry measurement (red) of PVIlGaP at 69°

(top) and 74° (bottom) and model fit to data (black dash).

500 750

10

20

Wavelength (nm)

y in

de

gre

es

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density (1.15 g cm-3 for PVP and 1.25 g cm-3 for PVI) is representative of the solvent-free

layer density. For a 10 nm thick solvent-free PVP layer the corresponding maximum site

density is 6.6 x 1015 cm-2 or 11 nmol cm-2. In the case of a 6 nm thick solvent-free PVI

layer the maximum site density is 4.8 x 1015 cm-2 or 8 nmol cm-2. The larger film

thickness of PVP grafts with respect to those obtained for the PVI grafts is consistent

with previous reports of lower grafting concentrations reported for the UV

polymerization of PVI relative to PVP.45,52 The identity of the polymer graft thus can be

used to control the physical characteristics at the mesoscale in addition to the chemical

identity of the ligand sites at the nanoscale.

2.2.2 Photoelectrochemical Performance

PEC performance of the assembled constructs is evaluated by fabricating photocathodes

from the functionalized and unmodified constructs (Figure 2.15). All measurements are

performed in aqueous solutions buffered at pH 7 (0.1 M phosphate buffer) in the dark and

at AM1.5 illumination using a 100 W solar simulator with a sample size consisting of at

least 4 individually tested electrodes. The polymer-grafted GaP electrodes (PVPlGaP and

PVIlGaP) produce a photocurrent density of 0.68 ± 0.18 mA cm-2 and 0.43 ± 0.02 mA

cm-2, respectively, when polarized at 0 V vs RHE. For the cobaloxime-modified GaP

electrodes, polarized at 0 V vs RHE, the current density is 1.3 ± 0.05 mA cm-2 for

PVPlGaP and 1.2 ± 0.08 mA cm-2 for PVIlGaP. For the cobaloxime-modified samples, a

positive shift in the potential needed to reach a selected current density (with Von defined

as the potential required to achieve a current density of 1 mA cm-2) is observed as

compared to the potential required using electrodes containing only the polymer graft

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Figure 2.15. Linear sweep voltammograms of PVPlGaP (dark blue), PVIlGaP (blue),

ColPVPlGaP (dark red) and ColPVIlGaP (red) working electrodes at pH 7 in the dark

(dotted lines) and with 100 mW cm-2 illumination (solid and dashed lines). An

unmodified GaP electrode under illumination is shown for comparison (black).

Table 2.2 PEC Characteristics

Construct Voc (V vs RHE) Von* (V vs RHE) J at 0 V vs RHE (mA cm-2)

GaP(100)

PVPlGaP

0.57 ± 0.03

0.57 ± 0.01

-0.037 ± 0.06

-0.068 ± 0.09

0.86 ± 0.01

0.68 ± 0.18

ColPVPlGaP 0.61 ± 0.05 +0.24 ± 0.04 1.3 ± 0.05

PVIlGaP 0.53 ± 0.05 -0.14 ± 0.02 0.43 ± 0.02

ColPVIlGaP 0.58 ± 0.02 +0.073 ± 0.05 1.2 ± 0.08

*where Von is defined here as the potential required to achieve a 1 mA cm-2 current

density.

-0.8 -0.6 -0.4 -0.2

-1.2

-0.8

-0.4

0.0

E (V vs Ag/AgCl)

J (

mA

cm

-2)

-0.2 0.0 0.2 0.4

E (V vs RHE)

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and without cobaloxime modification. For the PVP-grafted electrodes, cobaloxime

modification yields a +310 ± 100 mV shift in Von while for PVI-grafted electrodes,

cobaloxime modification yields a +210 ± 50 mV shift in Von. Likewise, Von for

ColPVPlGaP electrodes wafers that are tested in a three-electrode configuration is 170

mV positive of those obtained using ColPVIlGaP electrodes (Figure 2.15 and Table 2.2).

The measured open-circuit photovoltages (Voc) of the electrodes are also consistent with

the increased photoactivity of the electrodes following cobaloxime addition.

Analysis of the headspace of the PEC cell by gas chromatography (Figure 2.16) after 60

minutes of chronoamperometry at a voltage slightly positive of 0 V vs RHE confirms the

formation of H2 gas with a near-unity faradaic efficiency for the cobaloxime-modified

electrodes. For comparison, electrochemical measurements using solutions of the

Figure 2.16. Gas chromatogram of 5 mL of headspace before (black dash) and after (red)

bulk electrolysis of ColPVPlGaP working electrodes at pH 7 with 100 mW cm-2

illumination for 1 hour at 0 V vs RHE.

De

tecto

r R

esp

on

se

(a

.u.)

H2

26 28 30 32 34

Retention Time (sec)

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cobaloxime model compounds Co(dmgH)2(meIm)Cl and Co(dmgH)2(Py)Cl recorded in

acetonitrile solutions show that structural modifications to the ligand environment (axial

coordination to imidazole vs. pyridine) result in a 60 mV shift of the CoII/CoI redox

couple to more negative potentials (Figure 2.17), illustrative of the ligand environment’s

effect on the redox properties of the cobaloxime catalysts. For the cobaloxime-modified

GaP substrates reported here, the differences in PEC performance in aqueous

environments may in part be due to the inherent difference in activity of the cobaloximes

in the grafted polymer environment (PVI vs. PVP).

Figure 2.17. Cyclic voltammograms of Co(dmgH)2(meIm)Cl (green) and

Co(dmgH)2(Py)Cl (red) recorded in 0.1 M tetrabutylammonium hexafluorophosphate

in acetonitrile at a scan rate of 100 mV s-1 with a glassy carbon working electrode at

room temperature and ferrocene as an internal standard with E1/2 taken as 0.40 V vs NHE.

Data are normalized for comparison. Data collected by Samuel Jacob.

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2.2.3 Turnover Frequency

An estimate of the per cobalt center turnover frequency (TOF) of the cobaloxime-

modified electrodes can be arrived at using the following assumptions: 1) there is

uniform surface coverage of the graft and uniform distribution of cobaloximes along the

depth of the polymer graft, 2) the film thickness determined by ellipsometry is

representative of the solvent-free thickness of the film, and 3) all cobalt centers are active

and are the only sites of hydrogen production. Given the first and second set of

conditions, cobalt loading of the films can be estimated from the associated XP

spectroscopy and ellipsometry data. In the case of the ColPVPlGaP construct, the spectral

intensity ratio of the nitrogen contribution at 400.6 eV, assigned to pyridyl nitrogen

coordinated to cobalt centers, and the remnant peak at 398.6 equate to a 30% loading of

cobalt centers to pyridyl groups on the PVP graft. An analysis of spectral intensity ratio

of the nitrogen contributions using ColPVIlGaP samples indicates that 35% of the

available imidazole sites on the PVI graft are associated with an attached cobaloxime. An

analysis of the total Co:N ratios yields identical loadings. If the cobaloximes are,

however, not distributed evenly along the nitrogen sites of the grafted brushes but are

instead concentrated toward the upper portions of the polymer (i.e. away from the

underpinning semiconductor surface), then our analysis results in an overestimate of the

loading due to signal attenuation of nitrogen sites located at lower depths along the

polymer. Likewise, if solvent remains in the brush following cleaning and drying, then

the calculated FT represents an upper limit on the site density.

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Using cobaloxime loadings obtained from the analysis described above, the current

densities measured in three-electrode polarization experiments using cobaloxime-

modified GaP electrodes give information on the activity of the electrodes per number of

cobaloximes assembled on the polymer grafts. For example, the current density of 1.3

mA cm-2, measured at 0 V vs. RHE and under 1 sun illumination, for the ColPVPlGaP

electrode yields a TOF of 2.1 s-1, and the current density of 1.2 mA/cm2 for the

cobaloxime-PVI functionalized electrode, measured under similar conditions, gives a

TOF of 2.4 s-1. This analysis represents the activity of the electrode per amount of cobalt

present, regardless of the activity of individual centers. If not all cobaloxime centers are

active or equally active, as could likely be the case for the inherently heterogenized

molecular components reported here, our analysis could underestimate the TOF of

individual cobaloxime sites. Conversely, if there are other sites of hydrogen production

on the surface the TOF could be overestimated for individual cobaloxime sites. For

comparison, a 1.0 mM solution Co(dmgH)2(Py)Cl at a graphite electrode poised at -0.90

V vs. Ag/AgCl in 1,2-dichlorethane in the presence of 0.2 M Et3NH(BF4) (a sacrificial

reductant) yielded ≈100 turnovers in 2.5 hours with no visible degradation of the catalyst.

Previous reports, however, indicate that immobilized catalysts can have significantly

higher turnover ability compared to their solution counterpart. In a report by Artero and

coworkers using cobalt diimine-dioxime catalysts grafted onto carbon nanotubes

polarized at -0.59 V vs. RHE in acetate buffer (pH 4.5) a TOF of ≈2.2 s-1 is reported. The

authors speculate that immobilization of the catalyst prevents inactivation through

dimerization and enhances electron transfer dynamics from the conductive electrode to

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the catalytic site.53 Similarly, a more recent report by Turner and coworkers assigns a

TOF of 1.9 s-1 to 3.4 s-1 using an isonicotinic acid-modified cobaloxime catalysts

adsorbed on a TiO2-coated GaInP2 electrode operating at 0 V vs. RHE in an basic

aqueous solution (pH 13).54

2.3 Conclusions

Cobaloxime catalysts for hydrogen production have been assembled on the surface of

GaP(100) using both PVP and PVI grafts. The variation of the polymeric interface affects

the photoelectrochemical performance of the constructs. Surface-sensitive spectroscopic

analyses verify the successful synthesis of cobaloximes on the polyvinylpyridine or

polyvinylimidazole grafts using molecular assembly at recognition sites on the surface-

attached polymers. PEC characterization of the cobaloxime-modified assemblies shows a

marked increase in per geometric area hydrogen production rates as compared to results

obtained using electrodes without cobaloxime functionalization. This work illustrates the

versatility of the polymer graft as an interface for controlling structure at the nano- and

mesoscales as well as functional performance at the macroscale as evidenced by PEC

characterization of the photocathodes assembled from the modified wafers. The

imidazole- and pyridyl-grafted cobaloxime constructs are both capable of achieving a

current density greater than 1 mA cm-2 when polarized at potentials positive of the

reversible hydrogen electrode (RHE) and thus under reverse biased conditions, achieving

1 mA cm-2 at +0.24 V vs. RHE for the pyridyl-based construct and +0.073 V vs. RHE for

the imidazole-based assembly. The cobaloxime-PVP architecture shows improved per

geometric area photocurrent production over the cobaloxime-PVI construct, achieving a

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13.4 ± 1.0% higher photocurrent density for electrodes polarized at the potential of the

reversible hydrogen electrode. Yet the imidazole graft is 60% the length and more

conservative in use of cobaloxime complexes, containing 80% the number of cobalt

centers per geometric area. The more effective use of cobalt in the PVI-assembly is

evidenced in the per-cobalt TOF analysis of the ColPVPlGaP and ColPVIlGaP

photocathodes, estimated at 2.1 s-1 and 2.4 s-1 respectively. Future work will focus on an

improved understanding of surface coverage and distribution of cobaloximes along the

polymer graft using angle-resolved XP spectroscopy measurements, which should enable

a refined model and assessments of the loadings and per cobalt TOFs achieved using

these hybrid constructs. This work illustrates the potential to control and optimize the

properties of visible-light-absorbing semiconductors using polymeric overlay techniques

coupled with the principles of synthetic molecular design. Key features of the construct

include the use of polymer-functionalized semiconductors, the assembly of molecular

components at the polymeric interface, a modular architecture, and PEC operation in

aqueous conditions (an imperative for the photoelectrochemical reduction of water).

2.4 Experimental Methods

2.4.1 Materials

Single crystalline p-type gallium phosphide wafers were purchased from University

Wafers. The material is single side polished to an epi-ready finish. The p-type Zn-doped

GaP(100) wafers have a resistivity of 0.2 Ω cm-2, a mobility of 66 cm2 V-1 s-1, and a

carrier concentration of 4.7 x 1017 cm-3, with an etch pit density of less than 8 x 104 cm-2.

Preparation of all wafers began with initial degreasing with an acetone-soaked cotton

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swab followed by consecutive ultrasonic cleaning in acetone and isopropanol for 5

minutes each followed by drying under a nitrogen stream. The wafers were then exposed

to an air-generated plasma (Harrick Plasma, USA) at 30 W for 2 minutes. Finally the

wafers were etched in buffered hydrofluoric acid (6:1 HF:NH4F in H2O) for 5 minutes

followed by rinsing with distilled methanol and drying under a nitrogen stream then

storing under vacuum (-750 Torr). All reagents were purchased from Aldrich.

Isopropanol was cleanroom grade and used as received. Dichloromethane, methanol and

vinylimidazole were freshly distilled before use. All solvents were stored over the

appropriate molecular sieves prior to use. Milli-Q water (18.2 MΩ·cm) was used to

prepare all aqueous solutions.

2.4.2 Cobaloxime Synthesis

Synthesis of Co(dmgH2)(dmgH)Cl2 and Co(dmgH)2(py)Cl. These complexes were

prepared by Samuel Jacob according to a previously reported procedure.55

Synthesis of Co(dmgH)2(meIm)Cl. These complexes were prepared by Samuel Jacob. A

suspension of Co(dmgH2)(dmgH)Cl2 (1.1 g, 3.0 mmol) and 1-methylimidazole (0.58 g ,

7.0 mmol) was vigorously agitated in 60 mL of chloroform. After 10 minutes, water (30

mL) was added and the mixture was stirred for 2.5 h. The mixture was filtered and

washed with 60 mL portions of water using a separatory funnel until the aqueous layer

was clear. The organic layer was concentrated under reduced pressure and precipitated

with the addition of ethanol. The crude product was recrystallized from dichloromethane

and ethanol yielding a brown crystalline solid (45% yield). 1H NMR (400 MHz, CDCl3):

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2.39 (12H, s, CH3), 3.60 (3H, s, ArCH3), 6.66-6.67 (1H, m, ArH), 6.73-6.74 (1H, m,

ArH), 7.27 (1H, s, ArH), 18.43-18.51 (2H, brs, OH). UV-vis (CH2Cl2) 252, 297, 355 nm.

2.4.3 Wafer Functionalization

The freshly etched wafers were placed into a quartz flask containing the appropriate

argon-sparged monomer (N-vinylimidazole or 4-vinylpyridine) and purged with argon

for 15 minutes, after which they were placed into a UV chamber and irradiated with

shortwave (254 nm) light for 2 hours.11,18,56 The resultant graft serves a dual purpose,

offering a protection layer for the underpinning GaP surface47,57 and providing multiple

sites for subsequent assembly of cobaloxime catalysts at the polymeric interface.

Following the UV-induced attachment, the wafers were ultrasonically cleaned in freshly

distilled methanol and dried under a nitrogen stream then stored under vacuum (-750

Torr). Cobaloxime functionalization was achieved using wet-chemical treatment of the

polymer-modified substrate with a methanolic solution of Co(dmgH2)(dmgH)Cl2 (1 mM)

and 1 mM triethylamine (TEA). After 12 hours, the wafers were removed from the

reaction mixture, ultrasonically cleaned in freshly distilled methanol, dried under a

nitrogen stream and stored under vacuum (-750 Torr).

2.4.4 Wafer Characterization

XPS was performed using a monochromatized Al Kα source (hν = 1486.6 eV) operated

at 63 W with a takeoff angle of 0° relative to the surface normal and a pass energy for

narrow scan spectra of 20 eV at an instrument resolution of 700 meV. Survey spectra are

collected with a pass energy of 150 eV. Spectral fit was analyzed using CASA software

and all spectra were calibrated by adjusting adventitious carbon to 284.8 eV. Curves were

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fitted using a linear background for polymers and Shirley background for cobaloxime-

functionalized films. N 1s components were constrained to a fwhm of 1.3 eV.

Grazing angle attenuated total reflection Fourier transform infrared spectroscopy (GATR-

FTIR) was performed using a VariGATR accessory (Harrick Scientific) with a Ge crystal

plate installed in a Bruker Vertex 70. Samples were pressed against the Ge crystal to

ensure effective optical coupling. Spectra were collected using 256 scans under a dry

nitrogen purge at 4 cm−1 resolution with a GloBar MIR source, a broadband KBr

beamsplitter and a liquid nitrogen cooled MCT detector. Background measurements were

obtained from the bare Ge crystal and the data processed using OPUS software. GATR

measurements were baseline corrected for rubberband scattering.

Film thickness (FT) was determined using a J.A. Woollam Variable Angle Spectroscopic

ellipsometer with a spectral range of 200 nm-1200 nm. Measurements were taken at 69⁰

and 74⁰ incidence angles and analysis performed using Complete EASE software. The

model used to determine the FT of surface-grafted polyvinylimidazole was composed of

a GaP substrate layer (Palik), a GaP oxide layer (Zollner) with a fixed thickness of 1.01

nm and a Cauchy layer for the polymer film of each sample.

2.4.5 Electrode fabrication

GaP working electrodes were fabricated by applying an indium gallium eutectic (Aldrich)

to the backside of a wafer, then fixing a copper wire to the back of the wafer using a

conductive silver epoxy (Circuit Works). The copper wire was passed through a glass

tube, and the wafer was insulated and attached to the glass tube with Loctite 615 Hysol

Epoxi-patch adhesive. The epoxy was allowed to fully cure before testing the electrodes.

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2.4.6 Photoelectrochemical Characterization

PEC characterization was performed using 100 mW cm−2 illumination from a 100 W

Oriel Solar Simulator equipped with an AM1.5 filter. Three-electrode linear sweep

voltammetry and bulk electrolysis experiments (chronoamperometry) were performed

with a Biologic potentiostat using a platinum coil counter electrode, a Ag/AgCl, NaCl (3

M) reference electrode (0.21 V vs. NHE) and GaP working electrodes (including GaP

following acid etch, polymer-grafted GaP and cobaloxime-modified GaP) in a PEC cell

containing a quartz window. The supporting electrolyte was 0.1 M phosphate buffer (pH

7). Linear sweep voltammograms were recorded at sweep rates of 100 mV s−1 under a

continuous flow of 5% hydrogen in nitrogen. Chronoamperometry was performed with

the working electrode and at -0.61 V vs. Ag/AgCl, positive of 0 V vs. RHE, where E vs.

RHE = E vs. NHE + 0.05916 x pH (V) = E vs. Ag/AgCl + 0.05916 x pH +0.21 (V).

2.4.7 Hydrogen Detection

Gas analysis was performed via gas chromatography (GC) using an Agilent 490 Micro

GC equipped with a 5 Å MolSieve column at a temperature of 80°C and using argon as

the carrier gas. Gas samples were syringe-injected using 5 mL aliquots of headspace gas

collected with a gas-tight Hamilton syringe from a sealed PEC cell both prior to and

following 60 min of three-electrode photoelectrolysis using a cobaloxime-modified

working electrode polarized at +0.013 V vs. RHE. Prior to the experiment the cell was

purged for 30 min with argon before sealing. The retention time of hydrogen was

confirmed using a known calibrated source obtained from a standard lecture bottle

containing a hydrogen and argon mixture.

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CHAPTER 3 SOLAR HYDROGEN PRODUCTION USING MOLECULAR

CATALYSTS IMMOBILIZED ON GALLIUM PHOSPHIDE (111)A OR (111)B

POLYMER-MODIFIED PHOTOCATHODES

Portions of this work are excerpted with permission from:

Beiler, A. M.; Khusnutdinova, D.; Jacob, S. I.; Moore, G. F. ACS Appl. Mater. Interfaces

2016, 8, 10038–10047.

Copyright 2016 American Chemical Society

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3.1 Introduction

The crystal face of GaP(100) terminates with a mixed phase of Ga and P sites, while the

(111A) and (111B) faces consist of surfaces with predominantly atop Ga or atop P,

respectively. Both faces are subject to oxidative and corrosive processes; however

methods have been developed to chemically protect and passivate these otherwise

structurally unstable surfaces, including treatment with (NH4)2Sx,1 alkylation or

allylation with subsequent secondary functionalization of the A-side,2 and alkyl halide

reactions with the P sites via a Williamson ether synthesis on the B-side.3 An attachment

strategy that can be utilized across multiple crystal face orientations may be useful in

interfacing molecular catalysts to nanostructured materials that terminate with a range of

indices, thereby permitting a relatively dense loading of catalysts and relieving the

turnover frequency (TOF) of individual active sites required to achieve a selected current

density.

This chapter presents the functionalization of GaP(111) with cobaloxime 4–19 for

hydrogen production using a chemical attachment strategy that can be deployed on both

the A and B crystal faces (Figure 3.18). It has been shown that polyvinylimidazole (PVI)

confers stability to metal surfaces20,21 and in these efforts, it serves the dual role of

providing a linkage to molecular catalysts as well as a protective layer for the

underpinning GaP. As compared to unmodified electrodes, cobaloxime modification

yields a greater than four-fold increase in the photocurrent density measured for

electrodes polarized at zero volts versus the reversible hydrogen electrode (0 V vs. RHE).

Chronoamperometry coupled with gas analysis measurements show the photocurrent

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densities are relatively stable, with a drop off of less than 1% over 55 minutes following

an initial decrease of up to 12% during the first 5 minutes of photoelectrochemical (PEC)

characterization, and that the current produced is associated with a nearly quantitative

production of hydrogen gas. This work illustrates the promise of these constructs to

produce a fuel using only light as an energy input with no requirement of forward

electrochemical biasing, sacrificial reagents or extreme pH conditions. Additionally, the

modular assembly method allows modification of components as new materials and

discoveries emerge. In particular, and as illustrated in this chapter, the ability to export

the grafting chemistry across a selection of crystal face orientations is a desirable feature

Figure 3.18. Schematic of cobaloxime linked to either the GaP(111)A face or the GaP

(111)B face through surface-grafted polyvinylimidazole.

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in the context of functionalizing the inherently multi-faceted surfaces of nanostructured

light-harvesting materials which have shown great promise in emerging light capture and

conversion technologies due to their relatively large aspect ratios and short minority-

carrier diffusion lengths.22–26

3.2 Results and Discussion

3.2.1 Wafer Preparation and Characterization

Cobaloxime-modified GaP(111) wafers are assembled via a two-step process. First, PVI

is grafted onto gallium phosphide wafers using surface-initiated polymerization of the

vinylimidazole monomer under shortwave UV light.27–30 Second, surface-attached

cobaloxime complexes are formed using a wet chemical treatment that exchanges one of

two chloride ligands from the complex Co(dmgH2)(dmgH)Cl2 with an imidazole ligand

on the PVI graft. Sample preparation starts with placing clean, freshly etched GaP wafers

into a quartz flask containing the monomer under argon. The flask is then illuminated

with UV light (254 nm) for 2 hours before removing and cleaning the polymer-

functionalized wafers with successive solvent washes followed by drying under a stream

of nitrogen. The polymer-modified wafers are then placed in a sealed flask containing an

argon-sparged methanolic solution that is 1 mM in triethylamine and 1 mM

Co(dmgH2)(dmgH)Cl2. After 12 hours, the catalyst-modified wafers are removed from

the flask and cleaned with successive solvent washes followed by drying under a stream

of nitrogen then under vacuum. Following the PVI-grafting procedure, spectroscopic

ellipsometry measurements, performed in air, yield a polymer thickness of 6 nm. An

upper limit on the imidazole unit site density can be provided given the bulk PVI density

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(1.25 g cm-3)31 is representative of the solvent-free layer density. Thus, for a 6 nm thick

PVI layer, the maximum site density is 5 x 1015 cm-2 = 8 nmol cm-2.

Surface analysis using grazing angle attenuated total reflection (GATR-FTIR)

spectroscopy provides compelling evidence for successful chemical functionalization of

the GaP(111) surfaces. GATR-FTIR spectra of unmodified GaP(111A) and GaP(111B)

as well as spectra collected following photochemical grafting of vinylimidazole, yielding

PVIlGaP (111A) or PVIlGaP (111B), and spectra collected following assembly of

cobaloximes, yielding ColPVIlGaP (111A) or ColPVIlGaP (111B), are shown in Figure

3.19. For the GaP samples functionalized only with PVI, and prior to attachment of

catalysts, distinct IR absorbance bands associated with multimode in-ring C=C as well as

in-ring C=N stretches of PVI are observed at 1500 cm-1. In addition, the distinct 1373

cm-1 peak of the C=C stretch associated with the vinyl group of the monomer is not

pronounced on the PVI-functionalized wafers. Instead, a new peak indicative of the

planar deformation vibration of the CH2 groups in the polymer chain32 and centered at

1454 cm-1, is present.

Following treatment of PVIlGaP surfaces with the Co(dmgH2)(dmgH)Cl2 solution,

unique vibrational modes characteristic of imidazole units coordinated to cobaloxime

complexes are detected, including a peak at 1570 cm-1 characteristic of the C=N stretches

on the glyoximate ligands of cobaloximes coordinated to an axial imidazole.33

Furthermore, unlike the C=N and C=C vibrations of the imidazole ring observed at 1500

cm-1 on PVIlGaP samples, additional vibronic features appear at 1517 cm-1 on samples of

and ColPVIlGaP(111B) associated with the C=N and C=C vibrations of imidazole units

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Figure 3.19. FTIR transmission spectra of (a and c) N-vinylimidazole monomer in KBr

(blue) as well as a powder sample of the model cobaloxime catalyst,

Co(dmgH)2(meIm)Cl, in KBr (red). GATR-FTIR absorbance spectra of (b) the (111)A-

face and (d) (111)B-face of unmodified GaP (black dash) polyvinylimidazole-grafted

GaP (blue) and cobaloxime-modified GaP (red). The spectra shown in parts a and c are

identical and included to facilitate comparisons.

coordinated to cobalt centers. This 17-wavenumber difference is consistent with

previously reported IR spectra of metals coordinating to PVI.34 Finally, and as described

in the following sentences, comparison of the NO- stretching region in spectra of

ColPVIlGaP with spectra of Co(dmgH2)(dmgH)Cl2 and Co(dmgH)2(meIm)Cl, a model

cobaloxime compound bearing an axial N- methylimidazole unit, affords a direct

1700 1450 1200

Wavenumber (cm-1)

Abso

rbance

111A(c)

% T

ransm

ittance

(a)

1700 1450 1200

Wavenumber (cm-1)

111B(d)

(b)

ν C-C & C=N

(ring)

ν N-O

(cobaloxime)ν C-C & C=N

(ring)ν C=C

(ring)

ν N-O

(cobaloxime)

ν C=N

(dmg)ν C=N

(dmg)

ν C=C

(ring)

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spectroscopic method of confirming successful synthesis of intact cobaloxime complexes

on the polymeric interface. The FTIR spectrum of the precursor material,

Co(dmgH2)(dmgH)Cl2, used to assemble the attached cobalt complexes to the PVI-

functionalized electrode includes a strong NO- stretch at 1225 cm-1. However, this feature

is not pronounced in the spectrum of PVI-GaP samples following treatment with

Co(dmgH2)(dmgH)Cl2. Instead the strong NO- stretching frequency is observed at 1239

cm-1 on the surface of the A and B wafers, a value more consistent with that observed for

the NO- stretch at 1237 cm-1 measured for the cobaloxime model compound,

Co(dmgH)2(meIm)Cl. All spectra are collected at 4 cm-1 resolution and the lack of

apparent peak features centered at 1225 cm-1 in spectra of ColPVIlGaP surfaces indicate

that minimal to no residual Co(dmgH2)(dmgH)Cl2 remain following ultrasonic cleaning

of the samples. In addition, the close alignment of the spectral features of ColPVIlGaP

samples with those obtained for powders of the model cobaloxime compound indicates

that that surface-assembled cobaloxime species have a vibrational structure similar to that

of the non-surface-attached model compound.

Sample analysis using X-ray photoelectron (XP) spectroscopy provides further evidence

of successful surface functionalization. Survey XP spectra of PVIlGaP samples show the

presence of additional O, N, and C elements as compared to spectra of unfunctionalized

GaP. In contrast to the Ga 2p and P 2p core level XP spectra of wafers with a native

oxide layer (Figure 3.20), the spectral features associated with gallium oxide and

phosphate are significantly reduced following the H2SO4 etching and subsequent polymer

grafting procedure, despite the samples being exposed to air following the polymer-

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Figure 3.20. XP spectra of the Ga 2p (left) and P 2p (right) regions of unmodified GaP

(111)A (top) and GaP(111)B (bottom). The circles are the spectral data, and the solid

lines represent the background (gray), component fit (green), and overall fit (black).

grafting step (Figure 3.21). For the untreated GaP (111A) and GaP (111B) wafers, the Ga

2p3/2 spectral intensity ratios, AGa−O/AGa−P, are 0.08 and 0.49, and the P 2p spectral

intensity ratios, AP-O/AP-Ga, are 0.04 and 0.12, respectively. By contrast, inspection of the

XP core level spectra for PVIlGaP surfaces show a significant attenuation of the substrate

1125 1115

Binding Energy (eV)

Inte

nsity (

a.u

.)Ga 2p

111A

(b)

140 135 130 125

Binding Energy (eV)

Inte

nsity (

a.u

.)

P 2p

111A

(c)

1125 1115

Binding Energy (eV)

Inte

nsity (

a.u

.)

Ga 2p

111B

(b)

140 135 130 125

Binding Energy (eV)

Inte

nsity (

a.u

.)P 2p

111B

(c)

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Figure 3.21. XP spectra of the Ga 2p (left) and P 2p (right) regions of polymer-modified

GaP (111)A (top) and GaP(111)B (bottom). The circles are the spectral data, and the

solid lines represent the background (gray), component fit (blue), and overall fit (black).

signals due to the presence of the grafted molecular layer. On the PVIlGaP A face, the

AGa-O/AGa-P ratio is 0.06 and there is no detectable phosphate feature. On the PVIlGaP B

face, both the gallium signal and phosphate feature are unapparent. In the C 1s core level

XP spectra of the polymer-functionalized wafers, a shakeup satellite appearing 6 eV

higher in binding energy than the C 1s feature centered at 284.8 eV is indicative of pi/pi*

1120 1115

Binding Energy (eV)

Inte

nsity (

a.u

.)Ga 2p

111A

(b)

135 130 125

Binding Energy (eV)

Inte

nsity (

a.u

.)

P 2p

111A

(c)

1120 1115

Binding Energy (eV)

Inte

nsity (

a.u

.)

Ga 2p

111B

(b)

135 130 125

Binding Energy (eV)

Inte

nsity (

a.u

.)

P 2p

111B

(c)

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bonding of aromatic polymers. Lastly, the N 1s core level XP spectra of PVIlGaP

samples show two features centered at ~400 and 398 eV with near-equal spectral

intensity as anticipated for the 1:1 ratio of amine and imine nitrogens associated with

imidazole units on the PVI graft (Figure 3.22a and 3.22c). This is in sharp contrast to

Figure 3.22. N 1s core level spectra of (a) PVIlGaP(111)A, (b) ColPVIlGaP(111)A, (c)

PVIlGaP(111)B, and (d) ColPVIlGaP(111)B. Circles represent the spectral data. Solid

and dash lines are background (gray), component (red or blue), and overall (black) fits to

the experimental data.

(a

.u.)

N 1s(a)

Inte

nsity

Binding Energy (eV)

111A(b)

N 1s(c)

Binding Energy (eV)

111B(d)

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spectra reported on GaP samples following grafting of PVP where only a single nitrogen

feature is observed at 398.7 eV.35,36

Survey XP spectra of ColPVIlGaP samples confirm the presence of additional Co and Cl

elements associated with attached cobaloximes. Analysis of the Co and Cl spectral

intensities obtained from core level XP spectra, following the application of appropriate

sensitivity factors, yields a measured Co:Cl ratio of 1:1. However, the measured Co:Cl

ratio using a Co(dmgH2)(dmgH)Cl2 powder sample is 1:2. These ratios are consistent

with the proposed attachment mechanism invoking a base-promoted conversion of the

dimethylglyoxime ligand of Co(dmgH2)(dmgH)Cl2 to a dimethylglyoximate monoanion

and the associated replacement of one of the axial X-type chloride ligands with an L-type

nitrogen ligand on the PVI-polymer brush.

Additional structural confirmation is provided by comparison of the N 1s and Co 2p core

level spectra of ColPVIlGaP samples which yields a Co:N spectral intensity ratio of 1:11

and 1:10 on the 111A and 111B modified surfaces, indicating that 28%-32% of the

imidazole units on the polymer graft are coordinated to a Co center, provided there is an

evenly distributed loading of Co sites along the ~6 nm depth polymer coat. Further,

unlike the N 1s core level spectra obtained for PVIlGaP surfaces which show only two

distinct nitrogen features with approximately equal spectral intensity, N 1s core level

spectra of ColPVIlGaP samples can be fit with three additional nitrogen contributions

assigned to imine, amine and glyoximate nitrogens coordinated to the Co centers of the

cobaloximes (Figure 3.22b and 3.22d). As measured in previous reports, coordination of

cobalt centers to a surface-grafted PVP-polymer brush is associated with displacement of

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the N 1s feature assigned to attached pyridyl nitrogens to higher binding ratios estimated

from the Co:N spectral intensities. Finally, the Co 2p core level spectra of ColPVIlGaP

samples show samples show peaks centered at 780.0 eV (2p3/2) and 795.0 eV (2p1/2), a

2:1 branching and no apparent shakeup satellite structures, all features indicative of the

Co3+ species.37,38

3.2.2 Photoelectrochemical Performance

Photoactivity of the electrode assemblies is assessed via electrochemical characterization

in aqueous solutions buffered at pH 7 (0.1 M phosphate buffer) in the dark and upon

AM1.5 illumination using a 100 mW cm−2 solar simulator. For the 111 samples reported

here, all A and B face constructs are prepared using wafers cut from the same ingot

resulting in samples that achieve a similar saturating photocurrent when under equal

illumination conditions, thus simplifying the comparison of results obtained using the

photoelectrodes. The doping conditions of these wafers as well as the light source used

for illumination differ from previous reports from, and both of these factors can affect the

maximum attainable current density (Figure 3.23). Figures 3.24a and 3.24b show the

three-electrode polarization curves obtained using surface-functionalized GaP working

electrodes. For the cobaloxime-modified electrodes, the photocurrent measured at 0 V vs.

RHE is significantly higher than those achieved testing unmodified or polymer-only

treated electrodes, with the PVIlGaP electrodes having a current density of 0.32 ± 0.04

and 0.30 ± 0.08 mA cm-2 and the ColPVIlGaP electrodes having a current density of 0.89

± 0.02 and 0.89 ± 0.03 mA cm-2 for the A and B face, respectively (Table 3.3). Consistent

with the increased photoactivity of the molecular catalyst-modified electrodes, the

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Figure 3.23. Linear sweep voltammograms of working electrodes using GaP substrates

with the varied properties and illumination conditions.

1 (solid line) illuminated with a Newport Oriel Apex illuminator (100 mW cm‐2) using

Co‐PVP-modified Zn doped p‐GaP(100) with a resistivity of 1.17 x 10‐1 Ω.cm, a mobility

of 77 cm2 V‐1 s‐1, and a carrier concentration of 6.95 x 1017 cm‐3.36 2 (dotted line)

illuminated with a Solar Light PV cell test simulator (100 mW cm‐2) using the same

electrode described in 1.39 3 (dashed-dotted line) illuminated with a Solar Light PV cell

test simulator (100 mW cm‐2) using Co‐PVP-modified Zn doped p‐GaP(100) with a

resistivity of 5.5 x 10‐2 Ω.cm, a mobility of 54 cm2 V‐1 s‐1, and a carrier concentration of

2.2 x 1018 cm‐3.35 4 (dashed-dotted line) illuminated with a LSC-100 Series Oriel Solar

Simulator equipped with an AM1.5 filter (100 mW cm‐2) using Co‐PVI-modified Zn

doped p‐GaP(100) with a resistivity of 4.6 x 10‐2 Ω.cm, a mobility of 50 cm2 V‐1 s‐1, and a

carrier concentration of 2.7 x 1018 cm‐3 (chapter 2).

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measured open-circuit photovoltages (as determined by the zero-current value in the

linear sweep voltammograms) of the PVIlGaP electrodes are 0.56 ± 0.02 V vs. RHE and

0.58 ± 0.04 V vs. RHE for the A and B faces, respectively; with an increase to 0.64 ±

0.02 following cobaloxime-modification of A-face electrodes and to 0.65 ± 0.02

following cobaloxime-modification of B-face electrodes (Table 3.3). The minimum

sample size of each photocathode type reported (GaP, PVIlGaP and ColPVIlGaP)

included testing of three distinct electrode assemblies. The polymer-only functionalized

electrodes show a slightly greater deviation in their current- voltage responses as

compared to results obtained using ColPVIlGaP assemblies, especially in the B-face

Figure 3.24. Linear sweep voltammograms of (a) GaP(111)A and (b) GaP(111)B

working electrodes following polyvinylimidazole grafting (blue) and cobaloxime

attachment (red). All measurements were performed at pH 7 in the dark (dashed-dotted

lines) or under 100 mW cm−2 illumination (solid lines).

-1.0 -0.5 0.0

-1.0

-0.5

0.0

J (

mA

cm

-2)

E (V vs Ag/AgCl)

(a)

0.0 0.5

E (V vs RHE)

111A

-1.0 -0.5 0.0

-1.0

-0.5

0.0

E (V vs Ag/AgCl)

111B

(b)

0.0 0.5

E (V vs RHE)

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samples. It has previously been shown that the B face of GaP(111) is more prone to

residual oxide coverage following initial etching and cleaning,40 which may provide an

explanation for the slightly increased variability in the data reported here for the

PVIlGaP(111B) electrodes. However, following cobaloxime attachment the electrodes

prepared on either face show nearly identical current and voltage responses with minimal

variability of results between individually fabricated electrodes. For all catalyst-modified

photocathodes reported here, hydrogen production is confirmed via gas chromatography

analysis of the headspace, showing near-unity faradaic efficiency. The photocurrent

response and associated rate of hydrogen production for both the A and B faces

functionalized GaP(111) wafers are nearly identical. The measurements also show that

the photocurrent over an hour is relatively stable, with a decrease of less than 1% over 55

minutes following an initial drop off of up to 12% during the first 5 minutes of

photoelectrochemical (PEC) characterization (Figure 3.25). Previous computational

Table 3.3 PEC Characteristics

Construct Voc (V vs RHE) J at 0 V vs RHE (mA cm-2)

GaP(111)A

PVIlGaP(111)A

0.02 ± 0.02

0.56 ± 0.02

0.22 ± 0.06

0.32 ± 0.04

ColPVIlGaP(111)A 0.64 ± ± 0.02 0.89 ± 0.02

GaP(111)B

PVIlGaP(111)B

0.53 ± 0.06

0.02± 0.04

0.22 ± 0.06

0.30 ± 0.08

ColPVIlGaP(111)B 0.58 ± 0.02 0.89 ± 0.03

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and experimental studies show that redox cycling of cobaloxime solutions can result in

the dissociation of N-containing ligands from cobalt centers, and the loss of current

during the initial 5 minutes of PEC characterization of the cobaloxime-modified

assemblies reported here may in part be due to loss of loosely bound catalysts located at

electrolyte-exposed edges of the polymer that are not protected by the encapsulating

environment of the polymer.36

3.2.3 Turnover Frequency

The data obtained from ellipsometry, XP spectroscopy, and PEC measurements allow an

estimate of the TOF of the ColPVIlGaP construct per cobalt center. For example, an

electrode operating at a 0.9 mA cm-2 current density (a value representative of that

measured using ColPVIlGaP electrodes polarized at 0 V vs. RHE) with a 6 nm PVI graft

Figure 3.25. Three-electrode electrolysis measurements using cobaloxime-modified

GaP(111)A (dashed) and cobaloxime-modified GaP(111)B (solid) working electrodes

polarized at 0 V vs RHE. All measurements were performed at pH 7 under 100 mW cm−2

illumination.

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and 30% attachment to cobaloxime catalysts yields a TOF of 7,000 per hour per cobalt

center, assuming that all the cobalt centers are photoelectrochemically active. For

comparison, a TOF of 8,000 per hour was reported by Artero and coworkers using an

analogous cobaloxime species surface grafted to an electroactive carbon support

polarized at -0.59 V vs. RHE41 and a TOF of 1.9 per second was reported by Turner et

al.42 using a cobaloxime catalyst assembled on a TiO2-coated GaInP2 semiconductor

poised at 0 V vs RHE.

3.3 Conclusions

In conclusion, cobaloxime catalysts are successfully assembled on both crystal faces of

gallium phosphide 111 by employing a vinylimidazole polymer brush interface.

Structural analysis of the reported assemblies is performed using spectroscopic

ellipsometry, GATR-FTIR, and XP spectroscopies. PEC characterization of the modified

cathodes shows significant improvement of the photoperformance for hydrogen

production of GaP electrodes following polymeric cobaloxime modification, obtaining a

current density of ≈1 mA cm-2 when polarized at 0 V vs. RHE. Our measurements

indicate that a slightly higher loading of catalysts can be achieved via functionalization of

the B face with respect to results obtained on A face modified samples. Yet, the

photoelectrochemical characterization of samples using A or B face modification show

nearly identical photoperformance under the conditions tested, illustrating that factors

other than catalyst loading can limit photoactivity. Previous light intensity dependence

measurements obtained using ColPVPlGaP samples show a near-linear response of the

current measured at 0 V vs. RHE, indicating that in such hybrid constructs, photocarrier

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transport to the interface may in part limit the performance of the Co-modified GaP

photocathodes. Although the mechanistic details of vinyl group attachment chemistry are

not settled,43–49 molecular binding appears to occur over bridging oxygen atoms on GaP

(100) surfaces.50 A similar attachment chemistry may occur for the functionalized GaP

(111A) and GaP (111B) constructs reported in this work, consistent with the similarity in

catalysts-polymer loadings and photoelectrochemical performance achieved using these

substrates as well as the analysis of surface oxygen content performed prior to and

following surface functionalization. Efforts to further analyze the loading, mesoscale

architecture, surface energetics (thermodynamics) and activity of catalysts (kinetics) are

underway. Nonetheless, attachment chemistry reported in this chapter is not limited to a

specific crystal face of gallium phosphide, a promising feature regarding the applicability

of this attachment strategy across varying crystal face orientations.

3.4 Experimental Methods

3.4.1 Materials

Single crystalline p-type gallium phosphide wafers were purchased from University

Wafers. The material was single side polished to an epi-ready finish. The p-type

GaP(111)A wafers have a resistivity of 0.046 Ω cm, a mobility of 50 cm2 V−1 s−1, and a

carrier concentration of 2.7 x 1018 cm−3. The etch pit density was less than 9.5 x 104 cm−2.

The p-type Zn-doped GaP(111)B(±0.5°) wafers have a resistivity of 0.054 Ω cm, a

mobility of 46 cm2 V−1 s−1, and a carrier concentration of 2.5 x 1018 cm−3. The etch pit

density was less than 2.0 x 104 cm−2.

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3.4.2 Synthesis

All syntheses were carried out under an argon atmosphere using Schlenk techniques

unless otherwise stated. All reagents were purchased from Aldrich. Isopropanol was

cleanroom grade and used as received. Dichloromethane, methanol, and vinylimidazole

were freshly distilled before use. All solvents were stored over the appropriate molecular

sieves prior to use. Milli-Q water (18.2 MΩ cm) was used to prepare all aqueous

solutions. The cobaloxime syntheses was carried out as described in Section 2.4.2.

3.4.3 Wafer Preparation

All wafers were initially degreased with an acetone-soaked cotton swab. GaP(111) wafers

were further cleaned using consecutive ultrasonic treatments in a series of solvents

(acetone, 1 min; methanol, 1 min; dichloromethane, 30 s; methanol, 1 min; and water, 1

min), followed by a 30 s etch in concentrated sulfuric acid.40 Unmodified wafers used for

XPS analysis were thoroughly degreased but not acid-etched.

3.4.4 Wafer Functionalization

The freshly etched wafers were put into an argon-sparged solution of N-vinylimidazole

and exposed to 254 nm UV light for 2 h. After thoroughly rinsing with methanol, the

wafers were dried under N2 and stored under vacuum. Cobaloxime functionalization was

achieved by covering the PVIlGaP wafers with an argon-degassed solution of

Co(dmgH)2(dmgH)Cl2 and triethylamine (1 mM in each) in methanol and allowing them

to react overnight. The wafers were rinsed with methanol, then ultrasonically treated in

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methanol for 1 min, followed by rinsing with isopropanol, and drying under N2 then

vacuum.

3.4.5 Electrode Fabrication

GaP working electrodes were fabricated by applying an indium−gallium eutectic

(Aldrich) to the backside of a wafer and then fixing a copper wire to the back of the wafer

using a conductive silver epoxy (Circuit Works). The copper wire was passed through a

glass tube, and the wafer was insulated and attached to the glass tube with Loctite 615

Hysol Epoxi-patch adhesive. The epoxy was allowed to fully cure before testing the

electrodes.

3.4.6 Instrumentation

UV−Vis Spectroscopy. Ultraviolet−visible (UV−vis) optical spectra were recorded on a

Shimadzu SolidSpec-3700 spectrometer with a D2 (deuterium) lamp for the ultraviolet

range and a WI (halogen) lamp for the visible and near-infrared regions. Transmission

and reflectance measurements were performed with an integrating sphere.

NMR Spectroscopy. Nuclear magnetic resonance (NMR) spectra were recorded on a

Varian NMR spectrometer operating at 400 MHz. Unless otherwise stated, all spectra

were collected at room temperature.

FTIR Spectroscopy. Grazing angle attenuated total reflection Fourier transform infrared

spectroscopy (GATR-FTIR) was performed using a VariGATR accessory (Harrick

Scientific) with a Ge crystal plate installed in a Bruker Vertex 70. Samples were pressed

against the Ge crystal to ensure effective optical coupling. Spectra were collected using

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256 scans under a dry nitrogen purge with a 4 cm−1 resolution, GloBar MIR source, a

broadband KBr beamsplitter, and a liquid nitrogen cooled MCT detector. Background

measurements were obtained from the bare Ge crystal, and the data were processed using

OPUS software. GATR measurements were baseline-corrected using an ATR correction

for a germanium crystal and a sample with a refractive index of 1.43. Spectra from model

compounds in pressed KBr pellets were acquired with the same settings but using

transmission mode.

X-ray Photoelectron Spectroscopy. X-ray photoelectron spectroscopy (XPS) was

performed using a monochromatized Al Kα source (hν = 1486.6 eV), operated at 63 W,

on a Kratos system at a takeoff angle of 0° relative to the surface normal and a pass

energy for narrow scan spectra of 20 eV, at an instrument resolution of approximately

700 meV. Survey spectra were collected with a pass energy of 150 eV. Spectral fitting

was performed using Casa XPS analysis software. Spectral positions were corrected by

shifting the primary C 1s core level position to 284.8 eV, and curves were fit with quasi

Voigt lines following Shirley background subtraction. All N 1s fits were constrained to a

full width at half-maximum (fwhm) value of less than 1.3 eV.

Electrochemistry. Cyclic voltammetry was performed with a Biologic potentiostat using a

glassy carbon (3 mm diameter) disk, a platinum counter electrode, and a silver wire

pseudoreference electrode in a conventional three-electrode cell. Anhydrous acetonitrile

(Aldrich) was used as the solvent for electrochemical measurements. The supporting

electrolyte was 0.1 M tetrabutylammonium hexafluorophosphate. The solution was

deoxygenated by bubbling with argon. The working electrode was cleaned between

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experiments by polishing with alumina (50 nm diameter) slurry, followed by solvent

rinses. The potential of the pseudoreference electrode was determined using the

ferrocenium/ferrocene redox couple as an internal standard and adjusting to the normal

hydrogen electrode (NHE) scale (with E1/2 taken as 0.40 V vs NHE).

Photoelectrochemistry. Photoelectrochemical (PEC) characterization was performed

using 100 mW cm−2 illumination from a 100 W Oriel Solar Simulator equipped with an

AM 1.5 filter. Linear sweep voltammetry and three-electrode electrolysis

(chronoamperometry) were performed with a Biologic potentiostat using a platinum coil

counter electrode, a Ag/AgCl, NaCl (3 M) reference electrode (0.21 V vs NHE), and GaP

working electrodes (including GaP following acid etch, PVI-grafted GaP, and

cobaloxime-modified GaP) in a modified cell containing a quartz window. The

supporting electrolyte was 0.1 M phosphate buffer (pH 7). Linear sweep voltammograms

were recorded at sweep rates of 100 mV s−1 under a continuous flow of 5% hydrogen in

nitrogen. Open-circuit photovoltages were determined by the zero current value in the

linear sweep voltammograms. Chronoamperometry was performed with the working

electrode polarized at −0.610 V vs Ag/AgCl, slightly positive of 0 V vs RHE, where E vs

RHE = E vs NHE + (0.05916 V) (pH) (V) = E vs Ag/AgCl + (0.05916 V) (pH) + 0.21 V.

GC Analysis. Gas analysis was performed via gas chromatography (GC) using an Agilent

490 Micro GC equipped with a 5 Å MolSieve column at a temperature of 80 °C and

argon as the carrier gas. Gas samples were syringe-injected using 5 mL aliquots of

headspace gas collected with a gastight Hamilton syringe from a sealed PEC cell both

prior to and following 10 min of three-electrode photoelectrolysis using a cobaloxime-

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modified working electrode polarized at 0 V vs RHE. Prior to the experiment the cell was

purged for 30 min with argon before sealing. The retention time of hydrogen was

confirmed using a known source of hydrogen obtained from a standard lecture bottle

containing a hydrogen and argon mixture.

Ellipsometry. Film thickness (FT) was determined using a J. A. Woollam variable angle

spectroscopic ellipsometer with a spectral range of 200−1200 nm. Measurements were at

70°, 75°, and 80° incidence angles, and analysis was done using VASE software. The

model used to determine the FT of surface-grafted polyvinylimidazole was composed of

a GaP substrate layer (Aspnes), a GaP oxide layer (Zollner) with a fixed thickness of 1.01

nm, and a Cauchy layer for the polyvinylimidazole film of each sample. The Cauchy

coefficients for GaP(111)A were A = 1.414 and B = −0.034, and the FT of the Cauchy

layer was determined to be 6.2 ± .2 nm with an MSE of 8.356.

The Cauchy coefficients for GaP(111)B were A = 1.371 and B = 0.008, and the FT of the

Cauchy layer was determined to be 6.5 ± 0.2 nm with an MSE of 3.745. In this analysis,

the thickness of the oxide layers is based on ellipsometry measurements performed on

unfunctionalized GaP(111)A and GaP(111)B surfaces. However, the vast majority of the

oxide is likely formed during transportation and handling of the sample in air (up to 10

min) following the etching process and subsequent ellipsometry measurement. The

process of photografting and polymerizing N-vinylimidazole onto freshly etched GaP,

under inert conditions, should give an oxide layer much thinner than the average oxide

FT of 1.01 nm; thus these values provide an upper limit of any oxide formation on

polyvinylimidazole-grafted GaP.

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3.5 References

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(2) Mukherjee, J.; Peczonczyk, S.; Maldonado, S.; Arbor, A. Wet Chemical Functionalization of III−V

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(3) Peczonczyk, S. L.; Brown, E. S.; Maldonado, S. Secondary Functionalization of Allyl-Terminated

Gap(111)a Surfaces via Heck Cross-Coupling Metathesis, Hydrosilylation, and Electrophilic

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Chem. Commun. 2010, 46 (46), 8806.

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(20) Yang, G. H.; Kang, E. T.; Neoh, K. G.; Zhang, Y.; Tan, K. L. Electroless Deposition of Copper on

Polyimide Films Modified by Surface Graft Copolymerization with Nitrogen-Containing Vinyl

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(21) Yuan, S.; Pehkonen, S. O.; Liang, B.; Ting, Y. P.; Neoh, K. G.; Kang, E. T. Poly (1-

Vinylimidazole) Formation on Copper Surfaces via Surface-Initiated Graft Polymerization for

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(22) Liu, Chong. Dasgupta, Neil P. Yang, P. Semiconductor Nanowires for Artificial Photosynthesis.

Chem. Mater. 2014, 26 (1), 415–422.

(23) Grätzel, M. Recent Advances in Sensitized Mesoscopic Solar Cells. Acc. Chem. Res. 2009, 42 (11),

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(24) Milliron, D. J.; Gur, I.; Alivisatos, a P. Hybrid Organic–Nanocrystal Solar Cells. MRS Bull. 2005,

30 (01), 41–44.

(25) Law, M.; Greene, L. E.; Johnson, J. C.; Saykally, R.; Yang, P. Nanowire Dye-Sensitized Solar

Cells. Nat. Mater. 2005, 4 (6), 455–459.

(26) Tian, B.; J., K. T.; Lieber, C. M. Single Nanowire Photovoltaics. Chem. Soc. Rev. 2009, 38 (1),

165–184.

(27) Steenackers, M.; Lud, S. Q.; Niedermeier, M.; Bruno, P.; Gruen, D. M.; Feulner, P.; Stutzmann,

M.; Garrido, J. A.; Jordan, R. Structured Polymer Grafts on Diamond. J. Am. Chem. Soc. 2007, 129

(50), 15655–15661.

(28) Steenackers, M.; Gigler, A. M.; Zhang, N.; Deubel, F.; Seifert, M.; Hess, L. H.; Lim, C. H. Y. X.;

Loh, K. P.; Garrido, J. A.; Jordan, R.; et al. Polymer Brushes on Graphene. J. Am. Chem. Soc.

2011, 133 (27), 10490–10498.

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Polymer Brushes on Silicon Carbide. Chem. Mater. 2010, 22 (1), 272–278.

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(30) Seifert, M.; Koch, A. H. R.; Deubel, F.; Simmet, T.; Hess, L. H.; Stutzmann, M.; Jordan, R.;

Garrido, J. A.; Sharp, I. D. Functional Polymer Brushes on Hydrogenated Graphene. Chem. Mater.

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(32) Panov, V. P.; Kazarin, L. A.; Dubrovin, V. I.; Gusev, V. V.; Kirsch, Y. E. Infrared Spectra of

Atactic Poly-4-Vinylpyridine. J. Appl. Spectrosc. 1974, 21 (5), 1504–1510.

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Cobaloximes and Investigation on Their Infrared and Far-Infrared Spectra. Bull. Chem. Soc. Jpn.

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Functionalized GaP Semiconductors for Solar Hydrogen Production. Ind. Eng. Chem. Res. 2016, 55

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(36) Krawicz, A.; Yang, J.; Anzenberg, E.; Yano, J.; Sharp, I. D.; Moore, G. F. Photofunctional

Construct That Interfaces Molecular Cobalt-Based Catalysts for H2 Production to a Visible-Light-

Absorbing Semiconductor. J. Am. Chem. Soc. 2013, 135, 11861–11868.

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Cobalt Oxides and Cobalt Oxide Surfaces. Surf. Sci. 1976, 59 (2), 413–429.

(38) Dillard, J. G. Surface Chemistry of Cobalt in Calcined Cobalt-Kaolinite Materials. Clays Clay

Miner. 1983, 31 (1), 69–72.

(39) Krawicz, A.; Cedeno, D.; Moore, G. F. Energetics and Efficiency Analysis of a Cobaloxime-

Modified Semiconductor under Simulated Air Mass 1.5 Illumination. Phys. Chem. Chem. Phys.

2014, 16 (30), 15818–15824.

(40) Mukherjee, J.; Erickson, B.; Maldonado, S. Physicochemical and Electrochemical Properties of

Etched GaP(111)A and GaP(111)B Surfaces. J. Electrochem. Soc. 2010, 157 (4), H487–H495.

(41) Andreiadis, E. S.; Jacques, P.-A.; Tran, P. D.; Leyris, A.; Chavarot-Kerlidou, M.; Jousselme, B.;

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Based Electrocatalytic Nanomaterial for H2 Evolution under Fully Aqueous Conditions. Nat.

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(42) Gu, J.; Yan, Y.; Young, J. L.; Steirer, K. X.; Neale, N. R.; Turner, J. A. Water Reduction by a P-

GaInP2 Photoelectrode Stabilized by an Amorphous TiO2 Coating and a Molecular Cobalt

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(43) Buriak, J. M. Organometallic Chemistry on Silicon and Germanium Surfaces. Chem. Rev. 2002,

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(44) Cicero, R. L.; Linford, M. R.; Chidsey, C. E. D. Photoreactivity of Unsaturated Compounds with

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(45) Terry, J.; Linford, M. R.; Wigren, C.; Cao, R.; Pianetta, P.; Chidsey, C. E. D. Alkyl-Terminated

Si(111) Surfaces: A High-Resolution, Core Level Photoelectron Spectroscopy Study. J. Appl. Phys.

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(46) Mischki, T. K.; Donkers, R. L.; Eves, B. J.; Lopinski, G. P.; Wayner, D. D. M. Reaction of Alkenes

with Hydrogen-Terminated and Photooxidized Silicon Surfaces. A Comparison of Thermal and

Photochemical Processes. Langmuir 2006, 22 (20), 8359–8365.

(47) Ruther, R. E.; Franking, R.; Huhn, A. M.; Gomez-Zayas, J.; Hamers, R. J. Formation of Smooth,

Conformal Molecular Layers on ZnO Surfaces via Photochemical Grafting. Langmuir 2011, 27

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(48) Rosso, M.; Giesbers, M.; Arafat, A.; Schroën, K.; Zuilhof, H. Covalently Attached Organic

Monolayers on SiC and SixN4 Surfaces: Formation Using UV Light at Room Temperature.

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(49) Franking, R.; Kim, H.; Chambers, S. A.; Mangham, A. N.; Hamers, R. J. Photochemical Grafting

of Organic Alkenes to Single-Crystal TiO2surfaces: A Mechanistic Study. Langmuir 2012, 28 (33),

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CHAPTER 4 COBALT PORPHYRIN-POLYPYRIDYL SURFACE COATINGS

FOR PHOTOELECTROSYNTHETIC HYDROGEN PRODUCTION

Portions of this work are excerpted with permission from:

Beiler, A. M.; Khusnutdinova, D.; Wadsworth, B. L.; Moore, G. F. Inorg. Chem.

2017, 56, 12178–12185.

Copyright 2017 American Chemical Society

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4.1 Introduction

The use of a surface-grafted organic coating to assemble molecular catalysts for hydrogen

evolution to a visible-light-absorbing semiconductor is reported in this chapter. This

approach combines features of solid-state light capture and conversion materials with

molecular components for enhancing photoelectrochemical fuel production. The

materials used to assemble the hybrid photocathode include GaP as the underpinning

semiconductor, 4-vinylpyridine as the monomeric unit used to form a polypyridine

surface coating (PPy), and 5,10,15,20-tetra-p-tolylporphyrin cobalt(II) (CoTTP) as a

molecular component for enhancing photoelectrochemical hydrogen production.

Metalloporphyrins serve important roles in biology as reactive sites for driving enzymatic

reactions and as components in emerging molecular-based materials with applications to

energy transduction.1–20 As electrocatalysts, they are capable of chemically transforming

protons into hydrogen as well as converting carbon dioxide into carbon monoxide and/or

hydrocarbons such as methane and ethylene when electrochemically activated in solution

or immobilized at a conductive substrate polarized at an appropriate potential (Figure

4.26). A synthetic methodology for directly grafting metalloporphyrins onto GaP using

precursor complexes bearing a 4-vinylphenyl surface attachment group at the beta

position of the porphyrin macrocycle has been previously reported.21 The cobalt

porphyrin-modified photocathodes are active for hydrogen production, evolving the

product gas at a rate of ≈10 μL min-1 cm-2. Comparison of the total surface cobalt

porphyrin concentrations with the amount of hydrogen produced indicate the HER

activity per metal site is among the highest reported for a molecular-modified

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Figure 4.26. Voltammograms of 5,10,15,20-tetra-p-tolylporphyrin cobalt(II) (CoTTP)

recorded in 0.1 M tetrabutylammonium hexafluorophosphate in dimethylformamide and

0 mM tosic acid (green solid line), 10 mM tosic acid (green dashed line) or CO2 (black

dashed line) at a scan rate of 250 mV s-1 using a glassy carbon working electrode at room

temperature and ferrocene as an internal standard. Data collected by Diana

Khusnutdinova.

semiconductor photocathode operating at the H+/H2 equilibrium potential under 1-sun

illumination.

This work shows that an initially deposited organic interface consisting of repeating

pyridyl units can provide molecular recognition sites that self-assemble cobalt porphyrins

onto the polypyridine-modified GaP surface. This provides an alternate and streamlined

method for interfacing cobalt porphyrins to a semiconductor that does not require

synthetic modifications to the porphyrin macrocycle to install a surface-grafting

functional group. Thus, the attachment strategy also enables application of porphyrins

bearing substituents that are chemically incompatible or complicated by installment of

the vinylphenyl functionality.

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4.2 Results and Discussion

4.2.1 Wafer Preparation and Characterization

The cobalt porphyrin-polypyridine-modified GaP semiconductors (CoTTP|PPy|GaP)

described in this report are prepared using a two-step method (Figure 4.27) leveraging the

UV-induced surface grafting chemistry of alkenes22–29 to apply an initial thin-film

polypyridine surface coating, followed by wet-chemical treatment to assemble the cobalt

porphyrin units. During this process, freshly cleaned and etched GaP(100) wafers are

placed in an argon-sparged solution of 4-vinylpyridine under shortwave UV illumination

for 2 hours before removing and cleaning the functionalized wafers with successive

solvent washes followed by drying under a stream of nitrogen. The resulting

polypyridine-modified substrates (PPy|GaP) are then exposed to a 1 mM solution of

CoTTP in toluene under an argon atmosphere for 18 hours, forming the cobalt porphyrin-

modified wafers, CoTTP|PPy|GaP.

Analysis of CoTTP|PPy|GaP surfaces using grazing angle attenuated total reflection

Fourier transform infrared (GATR-FTIR) spectroscopy confirms that cobalt centers of the

porphyrin macrocycles coordinate to pyridyl nitrogen sites of the PPy graft (Figure 4.27).

In addition to characteristic vibrational features associated with C-H and C-N vibrations

of surface-grafted pyridyl units as well as the Cβ-H, Cα-N, and C=C vibrations of the

porphyrin macrocycle, a prominent absorption band is measured at 1009 cm-1.

Absorption bands appearing in the region from 1019-1004 cm-1 in the IR spectra of

metalloporphyrins are ascribed to in-plane porphyrin deformation. This region is

sensitive to both the elemental nature of the metal center as well as local coordination

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Figure 4.27. (left) Schematic representation of the synthetic method used to prepare the

PPy|GaP and CoTTP|PPy|GaP samples. (right) GATR-FTIR absorbance spectra of the (a)

1700-950 cm-1 region of unfunctionalized GaP (black), PPy|GaP (blue), and

CoTTP|PPy|GaP (purple), including (b) an expanded plot of the 1022-987 cm-1 region in

spectra of CoTTP|PPy|GaP.

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environment due to inductive and mesomeric effects.30,31 The feature at 1009 cm-1 on

CoTTP|PPy|GaP surfaces, labeled as νCo-N (Figure 4.27b), is particularly diagnostic of

cobalt porphyrin complexes coordinated to an axial pyridyl unit32 and thus provides

structural information on the bonding motif of the surface-immobilized cobalt

porphyrins.

Further information on the composition and structure of the modified surface, including

film thickness, pyridyl site density, loading efficiency (defined here as the fraction of

pyridyl sites coordinated to a cobalt center), and associated cobalt concentration per

geometric area is gained using complementary methods of ellipsometry, inductively

coupled plasma mass spectrometry (ICP-MS) and X-ray photoelectron (XP)

spectroscopy. Spectroscopic ellipsometry measurements of PPy|GaP surfaces are used to

determine the film thickness and provide an estimate of the pyridyl site density. For the

samples in this report, the obtained film thickness is 1.45 0.17 nm. Given the bulk

polyvinylpyridine density (1.15 g cm-3) is representative of the solvent-free film, the

calculated pyridyl site density is 1.57 0.18 nmol cm-2.

ICP-MS measurements following acid digestion of PPy|GaP samples indicate no

significant cobalt is present. However, following attachment of cobalt porphyrin

complexes, the Co surface concentration is estimated to be 0.39 0.08 nmol cm-2. The

reported cobalt surface concentration takes into account that the synthetic method (UV-

induced grafting of 4-vinylpyridine followed by wet chemical treatment with a CoTTP

solution) and the reaction vessel geometry used in this report yields samples with cobalt

porphyrin assembled on both sides of the single-side polished GaP wafers. The total

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cobalt, including contributions from the front and back side of the GaP wafer and as

measured by ICP-MS following acid digestion of CoTTP|PPy|GaP samples, is 0.59

0.12 nmol cm-2. Thus, the total cobalt contribution of CoTTP|PPy|GaP samples is nearly

identical to that estimated and previously reported8c for CoP-GaP samples (0.59 nmol

cm-2) in which no attempt was made to distinguish contributions from the front and back

side of the GaP wafer and thus represents an upper limit. However, XP spectroscopic

analysis of the polished and unpolished faces of CoTTP|PPy|GaP samples prepared via

UV illumination from the polished side of the wafer indicate the surface cobalt

concentration on the unpolished (non-directly illuminated) side of the wafer is 33% lower

than that of the polished (directly illuminated) side of the wafer, yielding the reported

cobalt concentration of 0.39 0.08 nmol cm-2 on the polished face. These measurements

indicate 25 5% of the pyridyl units on the CoTTP|PPy|GaP surface are coordinated to a

porphyrin cobalt center, equating to a total N/Co ratio of 4.1 0.8. This ratio, as

measured by ICP-MS and ellipsometry, is used to establish the N 1s background in XP

spectroscopy and assists in guiding the component fitting. This method of combining

information obtained from ICP-MS, ellipsometry and XP spectroscopy is particularly

useful in analyzing thin-film surface coatings on GaP as the N 1s spectrum contains

background components arising from Ga 3d (Auger) LMM lines (Figure 4.28).33

As compared to XP spectra of unfunctionalized GaP or PPy|GaP samples, spectra of the

CoTTP|PPy|GaP samples show additional Co and N contributions. After applying

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Figure 4.28. N 1s core level XP spectra of unfunctionalized GaP (black) and PPy|GaP

(blue).

the appropriate relative sensitivity factors, the N 1s to Co 2p spectral intensity ratio of 8.0

0.8 yields a loading efficiency of 26 6%, a value consistent with that determined by

the ellipsometry and ICP-MS analysis. In addition, unlike the single component observed

in the high-energy resolution N 1s spectra of PPy|GaP samples (Figure 4.28), spectra

obtained using CoTTP|PPy|GaP samples can be deconvoluted into three components

(Figure 4.29b). Based on the relative signal intensities and binding energies associated

with these components, the contributions centered at 398.5, 399.0, and 399.7 eV are

assigned to remnant pyridinic nitrogens of the surface graft, porphyrin pyrrolic nitrogens

bound to cobalt centers, and pyridinic nitrogens bound to cobalt centers, respectively.

Further, the ≈3:4:1 spectral intensity ratios associated with the three components are

consistent with both the 4:1 ratio of cobalt-pyrollic to cobalt-pyridinic nitrogen centers

anticipated for a cobalt porphyrin coordinated to a pyridyl unit, as well as the 26 6%

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Figure 4.29. (a) Molecular structure of a CoTTP unit coordinated to polypyridine. (b)

High-energy resolution XP spectrum of the N 1s region of CoTTP|PPy|GaP. Solid lines

represent the background (gray), component (blue, green, and red), and overall (black)

fits to the experimental data (circles). Shading indicates the component area assigned to

remnant pyridinic nitrogens (blue), porphyrin pyrrolic nitrogens bound to cobalt centers

(green), and pyridinic nitrogens bound to cobalt centers (red). (c) High-energy resolution

XP spectrum of the Co 2p3/2 region of CoTTP|PPy|GaP.

402 400 398

pyridinicCoTTP

399.7

pyrrolicCoTTP

399.0

remnant

pyridinicPPy

398.5

N 1s

Binding Energy (eV)

Inte

nsity (

a.u

.)

(b)

790 785 780 775 770

In

ten

sity (

a.u

.)

780.1

Co 2p3/2

Binding Energy (eV)

(c)

NN

N

N

NN

Co

(a)

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loading efficiency determined by comparison of the total N 1s and Co 2p3/2 spectral

intensity contributions. Finally, high-energy resolution XP spectra of the Co 2p region

(Figure 4.29c) show peaks centered at 780.1 eV (2p3/2) and 795.3 eV (2p½) with the

anticipated 2:1 branching ratio and 15.2 eV splitting.34 The Co 2p3/2 signal also shows

satellite peaks at higher binding energies, consistent with the presence of cobalt species in

the +2 oxidation state and the unpaired spin of the porphyrin cobalt center resting state.35

4.2.2 Photoelectrochemical Performance

The PEC performance of custom-built working electrodes composed of CoTTP|PPy|GaP

is assessed using three-electrode electrochemical techniques, including

chronoamperometry (Figure 4.30a) and linear sweep voltammetry (Figure 4.30b),

performed in buffered pH neutral aqueous conditions in the dark and under air mass 1.5

simulated solar illumination. Modification of GaP photocathodes with a cobalt porphyrin-

polypyridyl surface coating results in a significant anodic shift of the open-circuit

photovoltage (Voc), moving from +0.57 0.02 V vs RHE for the unmodified GaP

electrodes to +0.65 0.02 V vs RHE. Within the experimental error of the measurements,

the current density of -1.27 0.04 mA cm-2 achieved for CoTTP|PPy|GaP samples

polarized at 0 V vs RHE (i.e. at the H+/H2 equilibrium potential) is identical to that

reported using GaP samples modified with a directly attached cobalt porphyrin.21 Thus

the intervening polypyridyl surface coating does not diminish the performance gains

afforded by cobalt porphyrin surface modification yet reduces the synthetic efforts

required for assembly. In addition, the saturating photocurrent shows a linear increase

upon increasing illumination intensity, indicating that the PEC activity at 0 V vs RHE

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Figure 4.30. (a) Chronoamperogram of a CoTTP|PPy|GaP working electrode polarized at

0 V vs RHE under alternating (200 mHz) non-illuminated and illuminated conditions. (b)

Linear sweep voltammograms of CoTTP|PPy|GaP working electrodes recorded in the

dark (dashed line) and under simulated 1-sun illumination (solid line). The dotted vertical

line at 0 V vs RHE represents the equilibrium potential of the H+/H2 couple. The

calculated HER activity per cobalt center is included on the right ordinate axis. (c) Gas

chromatograms of a 5 mL aliquot of the headspace drawn from a sealed PEC cell using a

CoTTP|PPy|GaP working electrode polarized at 0 V vs RHE before (dashed line) and

after (solid line) 30 min of AM1.5 illumination. All measurements were performed using

a three-electrode configuration in 0.1 M phosphate buffer (pH 7).

-0.8 -0.6 -0.4 -0.2 0.0

-1.2

-0.8

-0.4

0.0

E (V vs Ag/AgCl)

J (

mA

cm

-2)

(b)

-0.2 0.0 0.2 0.4 0.6

E (V vs RHE)

15

10

5

0

HE

R a

ctiv

ity (H

2 s-1 C

o-1)

100 200 300 400 500

-1.2

-0.8

-0.4

0.0

100 200 300 400 500

J (

mA

cm

-2)

Time (s)

(a)

29 30 31 32

(c)

De

tecto

r R

esp

on

se

(a

.u.)

Time (s)

AM 1.5

illumination

H2

FE ≈ 93%

dark

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is in part limited by the photon flux. Characteristic of a photosynthetic assembly,36 these

results confirm that light, and no electrochemical forward biasing or use of sacrificial

redox reagents, is the energy input required to generate the photocurrent. Production of

hydrogen is confirmed via gas chromatography analysis of headspace samples taken from

a sealed PEC cell containing a CoTTP|PPy|GaP working electrode polarized at 0 V vs

RHE under simulated solar illumination (Figure 4.30c). Under these conditions, hydrogen

is produced at a rate of ≈10 μL min-1 cm-2 with a faradaic efficiency of 93 3%. Given

the cobalt porphyrin surface concentration (0.39 0.08 nmol cm-2) determined by XP

spectroscopy, ellipsometry, and ICP-MS, this equates to a HER activity per cobalt center

of 17.6 H2 molecules s-1 Co-1. During bulk electrolysis measurements, hydrogen bubbles

accumulate on the electrode surface and diminish the surface area of the working

electrode exposed to electrolyte, resulting in a decrease of current density over time.

Removal of bubbles during or following PEC characterization restores the current density

to a value nearly identical to that achieved for a freshly prepared electrode.

In addition, samples were prepared for post-PEC analysis using a customized three-

electrode cell equipped with a quartz window and spring-loaded copper support to secure

the GaP wafer, thus negating the need to encase the sample in epoxy. The electrodes were

polarized at 0 V vs RHE for a minimum of 3 min under 1-sun illumination. Samples were

rinsed with Mill-Q water and dried under vacuum before GATR-FTIR measurements.

The observation of a prominent νCo-N in-plane porphyrin deformation mode in GATR-

FTIR spectra of samples following bulk electrolysis indicates cobalt porphyrins maintain

their molecular integrity and coordination to pyridyl sites (Figure 4.31).

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Figure 4.31. GATR-FTIR absorbance spectra showing the νCo-N region of the

CoTTP|PPy|GaP before photoelectrochemical characterization (top, purple), following

exposure to buffer (middle, dark red), and after photoelectrochemical characterization

(bottom, green).

Additional insights regarding the performance gains afforded by cobalt porphyrin-

polypyridyl surface modification come from analysis of the photovoltaic performance

parameters derived from the voltammetry measurements, including those performed on

control samples of working electrodes composed of unfunctionalized GaP and PPy|GaP

(Figure 4.32 and Table 4.4). Although CoTTP|PPy|GaP shows an enhanced Voc compared

to unmodified GaP, similar Voc gains are obtained following only application of the thin-

1020 1010 1000

A

bso

rba

nce

Wavenumber (cm-1)

pre-PEC

O2/H20

pre-PEC

buffer

exposure

post-PEC

42

Proteus Gamma I

Pine Instrument Company

buffer

exposure

post-PEC

Does the catalyst maintain molecular integrity during

photoelectrochemical operation?

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Figure 4.32. Linear sweep voltammograms of unfunctionalized GaP (black), PPy|GaP

(blue), and CoTTP|PPy|GaP (purple) working electrodes. Circles represent the maximum

power point. Dashed horizontal and dashed vertical lines represent the current density

and potential, respectively, at the maximum power points.

Table 4.4 PEC Characteristics

Construct

Open Circuit

Voltage (V vs RHE)

Short Circuit

Current (mA cm-2)

Maximum Power

Point (mW cm-2)

Fill Factor

GaP(100)

PPylGaP

0.57 ± 0.02

0.64 ± 0.04

0.22 ± 0.06

0.32 ± 0.04

0.11 ± 0.05

0.15 ± 0.04

0.21 ± 0.08

0.23 ± 0.07

CoTTPlPPylGaP 0.65 ± 0.02 0.89 ± 0.02 0.32 ± 0.06 0.39 ± 0.07

E (V vs RHE)

-1.2

-0.8

-0.4

0.00.2 0.4 0.6

J (

mA

cm

-2)

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film polypyridyl surface coating (Figure 4.32). These results contrast to those reported

using GaP semiconductors with thicker polymer coatings (on the order of ≈10 nm) 37–40

where the Voc instead decreases following pyridyl group modification of the GaP surface.

It is speculated that this is in part due to a larger resistance and poorer ion conductivity

associated with the thicker organic coatings.41–43 Nonetheless, although the Voc of the

PPy|GaP and CoTTP|PPy|GaP electrodes is similar, the fill factor (ff) of the JV response

under illumination nearly doubles following treatment with CoTTP, moving from 0.21

0.08 for unfunctionalized GaP to 0.23 0.07 for PPy|GaP, and further increasing to 0.39

0.07 for CoTTP|PPy|GaP (Figure 4.32 and Table 4.4). Due to the steep increase in

operating photocurrent densities that are produced by changes in ff, this can have a

significant effect on performance in a photoelectrosynthetic cell.44

4.3 Conclusions

In summary, surface-sensitive spectroscopic methods verify our synthetic efforts

dedicated to construction of a hybrid composite material that structurally interfaces a

cobalt porphyrin hydrogen evolution catalyst to a visible light-absorbing semiconductor

using surface-attached pyridyl groups as molecular recognition sites. Complementary

methods of ellipsometry, ICP-MS, and XP spectroscopy are used to quantify the surface

cobalt concentrations and the fraction of pyridyl sites coordinated to cobalt centers. The

synthetic methods used to obtain these assemblies demonstrate design principles for

furthering hard-to-soft matter interface chemistry and set the stage to better understand

the structure and function relationships of molecular-modified semiconductors. Key

features of the construct reported here include the relative ease of synthetic preparation

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made possible by application of a thin-film organic coating that uses pyridyl groups to

assemble cobalt porphyrins on a GaP semiconductor surface, yielding a hybrid cathode

that uses solar energy to drive reductive fuel-forming reactions in aqueous solutions

without the use of organic acids or sacrificial chemical reductants. Thus, this work

introduces a highly useful, yet easily accessible, motif for preparing and studying

molecular-modified semiconductors. In order to elucidate the effect of the polymeric

interface, studies using different bases and polymeric architectures to assemble CoTTP as

well as other catalysts are underway.

4.4 Experimental Methods

4.4.1 Materials

All reagents were purchased from Sigma-Aldrich. Dichloromethane, hexanes, methanol,

and toluene were freshly distilled before use. Milli-Q water (18.2 MΩ·cm) was used to

prepare all aqueous solutions. Single crystalline p-type Zn-doped gallium phosphide (100)

wafers (University Wafers) were single side polished to an epi-ready finish. The GaP(100)

wafers have a resistivity of 0.16 Ω·cm, a mobility of 69 cm2 V-1 s-1, and a carrier

concentration of 4.5 x 1017 cm-3, with an etch pit density of less than 5 x 104 cm-2.

4.4.2 Synthesis

The compounds 5,10,15,20-tetra-p-tolylporphyrin (TTP) and 5,10,15,20-tetra-p-

tolylporphyrin cobalt(II) (CoTTP) were synthesized by Diana Khusnutdinova and Sylvia

Nanyangwe using modified versions of previously reported procedures.45,46

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4.4.3 Wafer preparation

The use of 4-vinylpyridine as a precursor for surface functionalization of GaP has been

previously reported.21,38,40,47,48 Briefly, diced semiconductor samples were etched with

buffered hydrofluoric acid before exposure to an argon-sparged solution of the neat

monomer 4-vinylpyridine under 254 nm UV light for 2 h. The PPy-functionalized samples

were then soaked for 18 h in a CoTTP solution (1 mM) in toluene.

4.4.4 Wafer characterization

Surface characterization of the wafers was carried out using ellipsometry, grazing angle

attenuated total reflection Fourier transform infrared spectroscopy (GATR-FTIR), X-ray

photoelectron (XP) spectroscopy, and inductively coupled plasma mass spectrometry (ICP-

MS).

4.4.5 Photoelectrochemistry

Photoelectrochemical (PEC) experiments were performed in 0.1 M phosphate buffer (pH

7) under AM 1.5 irradiation. A three-electrode configuration with GaP working electrodes

(including GaP following buffered hydrofluoric acid treatment, polypyridine-modified

GaP, and cobalt porphyrin-modified GaP) was used in a cell containing a quartz window.

HER activity was calculated assuming unity faradaic efficiency, although this was

confirmed at only one point (0 V vs RHE). Samples for post-PEC analysis were prepared

using a customized three-electrode cell equipped with a quartz window and spring-loaded

copper support to secure the GaP wafer, thus negating the need to encase the sample in

epoxy. An indium-gallium eutectic was applied between the copper support and GaP

sample. The electrodes were polarized at 0 V vs RHE for a minimum of 3 min under 1-sun

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illumination. Samples were rinsed with Mill-Q water and dried under vacuum before

GATR-FTIR measurements. All PEC experiments were conducted under a continuous flow

of 5% hydrogen in nitrogen.

4.4.7 Gas chromatography

Gas chromatography (GC) was used to analyze aliquots of headspace gas taken from a

sealed PEC cell both prior to and following 30 min of bulk electrolysis at 0 V vs RHE. The

93% faradaic efficiency reported is likely a lower limit and does not correct for loss of

hydrogen from the cell or during the sampling procedure.

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