Stm 4532

Dual E nhancement Mode F ield E ffect T rans istor ( N and P C hannel)

Mar.30, 2005 V er1.1

AB S OLUT E MAXIMUM R AT ING S (T A=25 C unless otherwise noted)

P arameter S ymbol N-C hannel P -C hannel Unit

Drain-S ource Voltage V DS V

G ate-S ource Voltage V G S V

Drain C urrent-C ontinuous @ T J=125 C-P ulsed

ID

2.0

A

A

A

W

IDM

Drain-S ource Diode F orward C urrent IS

Maximum P ower Diss ipation P D

Operating J unction and S torageTemperature R ange

T J , T S T G -55 to 150 C

T HE R MAL C HAR AC T E R IS T IC S

T hermal R es istance, J unction-to-Ambient RθJ A 62.5 /WC

a

a

a

a

b

30

5.5

23

1.7

-30

-4.5

-18

-1.7

1

P R ODUC T S UMMAR Y

V DS S ID R DS (ON) ( m Ω )

30V 5.5A40@ V G S = 10V

50@ V G S = 4.5V

S O-8

11 2 3 4

8 7 6 5

S 1 G 1 S 2 G 2

D1 D1 D2 D2

(N-C hannel) P R ODUC T S UMMAR Y

V DS S ID R DS (ON) ( m Ω )

-30V -4.5A55@ V G S = -10V

85@ V G S = -4.5V

(P -C hannel)

S amHop Microelectronics C orp.

Max Max

S T M4532

20 20

S T M4532=

P arameter S ymbol C ondition Min Typ Max Unit

OF F C HAR AC T E R IS T IC S

Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 30 V

Zero G ate Voltage Drain C urrent IDS S V DS 24V, V G S 0V= = 1 uA

G ate-B ody Leakage IG S S V G S 20V, V DS 0V= = nA

ON C HAR AC T E R IS T IC S b

G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 0.8 V

Drain-S ource On-S tate R es istance R DS (ON)V G S 10V, ID 6A

V G S 4.5V, ID 5.2A

On-S tate Drain C urrent ID(ON) V DS = 5V, V G S = 10V A

SF orward Transconductance F Sg V DS 10V, ID 6.0A

DY NAMIC C HAR AC T E R IS T IC S c

Input C apacitance C IS S

C R S S

C OS SOutput C apacitance

R everse Transfer C apacitance

V DS =8V, V G S = 0Vf =1.0MHZ

P F

P F

P F

S WIT C HING C HAR AC T E R IS T IC S c

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OF F )

tf

V DD = 10V,ID = 1A,V G E N = 4.5V,R L = 10R G E N = 6

ns

ns

ns

ns

Total G ate C harge

G ate-S ource C harge

G ate-Drain C harge

Qg

Qgs

Qgd

V DS =10V, ID = 6A,V G S =4.5V

nC

nC

nC

C

F all T ime

=

=

=

=

= =

2

1.8

N-C hannel E LE C T R IC AL C HAR AC T E R IS T IC S (T A 25 C unles s otherwis e noted)

m ohm

m ohm

ohm

ohm

50

4028

40

15

6

510

155

127

15.6

9.7

26.3

26.9

9.3

2.5

3.2

100

S T M4532

=


OF F C HAR AC T E R IS T IC S

Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID -250uA= -30 V

Zero G ate Voltage Drain C urrent IDS S V DS -24V, V G S 0V= = -1 uA

G ate-B ody Leakage IG S S V G S 20V, V DS 0V= = nA

G ate T hreshold Voltage V G S (th) V DS V G S , ID = -250uA= -1 -1.5 V

Drain-S ource On-S tate R es istance R DS (ON)V G S -10V, ID -4.9A 55

VGS -4.5V, ID -3.6A 85

On-S tate Drain C urrent ID(ON) V DS = -5V, V G S = -10V A

SF orward Transconductance F Sg V DS -15V, ID - 4.9A

DY NAMIC C HAR AC T E R IS T IC S c

Input C apacitance C IS S

C R S S

C OS SOutput C apacitance

R everse Transfer C apacitance

V DS =-15V, V G S = 0Vf =1.0MHZ

P F

P F

P F

S WIT C HING C HAR AC T E R IS T IC S c

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OF F )

tf

V D = -15V,R L = 15ID = -1A,V G E N = -10V,R G E N = 6

ns

ns

ns

ns

Total G ate C harge

G ate-S ource C harge

G ate-Drain C harge

Qg

Qgs

Qgd

V DS =-15V, ID = - 4.9A,V G S =-10V

nC

nC

nC

C

F all T ime

=

=

=

=

= =

3

P -C hannel E LE C T R IC AL C HAR AC T E R IS T IC S (T A 25 C unles s otherwis e noted)

ON C HAR AC T E R IS T IC S b

m ohm

m ohm

ohm

ohm

nC

V DS =-15V, ID=-4.9A,V G S =-10V

V DS =-15V, ID=-4.9A,V G S =-4.5V

-2.5

45

75

-12

4

393

116

45

13

4.7

47.1

17

15.6

7.3

2.4

3.3

100

S T M4532


E LE C T R IC AL C HAR AC T E R IS T IC S (T A=25 C unles s otherwis e noted)

DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S

Diode F orward Voltage V S DV G S = 0V, Is =1.7A N-C h 0.77 1.2

-0.82 -1.2V G S = 0V, Is =-1.7A P -C h V

b

C

Notes

c.G uaranteed by des ign, not subject to production testing.b.P ulse Test:P ulse Width 300us , Duty C ycle 2%.

F igure 1. Output C haracteris tics F igure 2. Transfer C haracteris tics

F igure 4. On-R es istance Variation with Drain C urrent and Temperature

F igure 3. C apacitance

V DS , Drain-to S ource Voltage (V )

V G S , G ate-to-S ource Voltage (V )V DS , Drain-to-S ource Voltage (V )

ID,

Dra

in C

urr

en

t(A

)C

, C

ap

aci

tan

ce (

pF

)

On

-Re

sist

an

ce

ID,

Dra

in C

urr

en

t (A

)a .S urface Mounted on F R 4 B oard, t 10sec.

4

RD

S(O

N),

1.8

1.6

1.2

0.8

1.4

1.0

0.6-55 0 50 100

25 C

25

20

15

10

5

00.0 0.5 1.0 1.5 2.0 2.5 3.0

-55 C

N-C hannel

T j=125 C

10

8

6

4

2

00 2 4 6 8 10 12

V G S =10,9,8,7,6,5,4,3V

V G S =1.5V

0 2 4 6 8 10 12

C iss

C rss

1200

1000

800

600

400

200

0

C oss

T J , J unction T emperature ( C )

1257525-25

V G S =10V ID=6A

No

rma

lize

d

S T M4532

N-C hannel

1.6

1.4

1.2

1.0

0.6

0.8

0.4-55 -25 0 25 50 75 100 125 150

V DS =V G S

ID=250uA

5

5

F igure 6. B reakdown V oltage V ariation with T emperature

BV

DS

S,

No

rma

lize

dD

rain

-So

urc

e B

rea

kdo

wn

Vo

ltag

e

T j, J unction T emperature ( C )

-50 -25 0 25 50 75 100 125 150

1.15

1.10

1.05

1.00

0.95

0.90

0.85

ID=250uA

F igure 5. G ate T hres hold V ariation with T emperature

Vth

, N

orm

aliz

ed

Ga

te-S

ou

rce

Th

resh

old

Vo

ltag

e


gF

S,

Tra

nsc

on

du

cta

nce

(S

)

Is, S

ourc

e-dr

ain

curr

ent (

A)

F igure 7. T rans conductance V ariation with Drain C urrent

IDS , Drain-S ource C urrent (A)

F igure 8. B ody Diode F orward V oltageV ariation with S ource C urrent

V S D, B ody Diode F orward V oltage (V )

15

12

9

6

18

00 5 10 15 20 25

3V DS =10V

20

10

0

1

0.4 0.6 0.8 1.0 1.2 1.4

T J =25 C

S T M4532

6

P -C hannel

F igure 1. Output C haracteris tics F igure 2. Transfer C haracteris tics

F igure 3. C apacitance

-V DS , Drain-to S ource Voltage (V )

-V G S , G ate-to-S ource Voltage (V )-V DS , Drain-to-S ource Voltage (V )

C,

Ca

pa

cita

nce

(p

F)

-ID

, D

rain

Cu

rre

nt

(A)

-ID

, D

rain

Cu

rre

nt

(A)

0 5 10 15 20 25 30

C iss

C oss

C rss

600

500

400

300

200

100

0

25

20

15

10

5

00 2 4 6 8 10 12

-V G S =10,9,8,7,6,5,4,3V 25 C

20

16

12

8

4

00 0.5 1 1.5 2 2.5 3

-55 C

T j=125 C

F igure 4. On-R es istance Variation with Temperature

On

-Re

sist

an

ce(O

hm

s)

RD

S(O

N),

1.8

1.6

1.2

0.8

1.4

1.0

0.6-55 0 25 100 125


(N

orm

aliz

ed

)

-25 50 75

V G S =-10V ID=-4.9A

-V G S =1.5V

S T M4532

P -C hannel

7

5

-25 0 25 50 75 100 125 150

1.15

1.10

1.05

1.00

0.95

0.90

0.85

ID=-250uA

with T emperature

Vth

, N

orm

aliz

ed

Ga

te-S

ou

rce

Th

resh

old

Vo

ltag

e


1.09

1.06

1.03

1.00

0.9

0.6

0.3-50 -25 0 25 50 75 100 125 150

V DS =V G S

ID=-250uA

with T emperature

BV

DS

S,

No

rma

lize

dD

rain

-So

urc

e B

rea

kdo

wn

Vo

ltag

e


F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

gF

S,

Tra

nsc

on

du

cta

nce

(S

)

-Is,

Sou

rce-

drai

n cu

rren

t (A

)

F igure 7. T rans conductance V ariation with Drain C urrent

-IDS , Drain-S ource C urrent (A)

F igure 8. B ody Diode F orward V oltageV ariation with S ource C urrent

-V S D, B ody Diode F orward V oltage (V )

8

6

4

10

00 5 10 15 20

2

V DS =-15V

20.0

10.0

1.0

0.0 0.5 1.0 1.5 2.0 2.5

T J =25 C

-55

S T M4532

8

5

N-C hannel

VG

S,

Ga

te t

o S

ou

rce

Vo

ltag

e (

V)

ID,

Dra

in C

urr

en

t (A

)

Q g, T otal G ate C harge (nC )

F igure 9. G ate C harge

F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area

F igure 10. Maximum S afe O perating Area

P -C hannel

-V DS , B ody Diode F orward V oltage (V )Q g, T otal G ate C harge (nC )

V DS , Drain-S ource V oltage (V )

4

5

3

2

1

00 2 4 6 8 10 12 14

16

V DS =10V

ID=6A

50

10

1 1

0.1

0.03

0.1 1 10 20 50

R DS (ON) L

imit

10ms100ms

1sDC

V G S =10VS ingle P uls e

T c=25 C

-VG

S, G

ate

to S

ourc

e V

olta

ge (

V)

-ID

, D

rain

Cu

rre

nt

(A)

10

8

6

4

2

00 2 4 6 8 10 12 14 16

V DS =-15V

ID=-4.9A 10

1 1

0.1

0.030.1 1 10 50

R DS (ON) L

imit

10ms100ms

1sDC

V G S =-10VS ingle P uls e

T A=25 C

30

30

40

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms

t

V

V

t

td(on)

OUT

IN

on

r

10%

td(off)

90%

10% 10%

50% 50%

90%

toff

tf

90%

P ULS E WIDT H

Tra

nsie

nt T

herm

al Im

peda

nce

2

1

0.1

0.01

S quare Wave P ulse Duration (sec)

F igure 13. Normalized T hermal T rans ient Impedance C urve

r(t)

,Nor

mal

ized

Effe

ctiv

e

9

5

S T M4532

INV E R T E D

Duty C ycle=0.5

0.2

0.1

0.05

0.02

S ingle P ulse

10-4

10-3

10-2

10-1

1 10 100

P DM

t1

t2

1. RθJ A (t)=r (t) * RθJ A

2. RθJ A=S ee Datasheet3. T J M-T A = P DM* RθJ A (t)4. Duty C ycle, D=t1/t2

V DD

R

DV

V

R

S

V

G

G S

IN

G E N

OUT

L

PAC K AG E OUT LINE DIME NS IONS

S O-8

10

S Y MB OLSMIN MIN

0.053

0.004

0.189

0.150

0.228

0.016

0°

1.35

0.10

4.80

3.81

5.79

0.41

0°

MAX MAX

0.069

0.010

0.196

0.157

0.2440.050

8°

1.750.25

4.98

3.99

6.20

1.27

8°

MILLIME T E R S INC HE S

A

A1

D

E

H

L

1

e B

H

E

L

A1

A

C

D

0.05 TYP. 0.016 TYP.

0.008TYP.

0.015X45°

S T M4532

SO-8 Tape and Reel Data

SO-8 Carrier Tape

SO-8 Reel

unit:PACKAGE

SOP 8N 150

A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T

6.40 5.20 2.10 ψ1.5(MIN)

ψ1.5 + 0.1 - 0.0

12.0±0.3 1.75 5.5

±0.05 8.0 4.0 2.0±0.05

0.3±0.05

UNIT:

TAPE SIZE

12

REEL SIZE

ψ330

M N W W1 H K S G R V

330± 1

62±1.5

12.4+ 0.2

16.8- 0.4

ψ12.75 + 0.15

2.0±0.15

S T M4532

11

Documents

Stm 4532