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Antioxidative Activity of Plant and
Regulation of Plant Growth Induced by
Oxygen Radicals
As traditional legend, the lighting strike enhances the growth the rice plant. This character means “partner of rice plant”. We have used the electrical stimulus for agriculture from ancient.
Stimulation to plantsStimulation to plants
Current stimulation method for plant growth is using chemical agents, that is, plant hormone.
Germination and growth enhancement of plants have been performedby chemical agents with the function of plant hormone such as gibberellin.
Major plant growth regulate agents are below:
Enhancement of germination and rooting
Indolebutyric acid
1-Naphthylacetamide
Growth inhibitor
Prohexadione-Calcium
Chlormequat
Promotion of flowering and fruition
Gibberellin
Cloxyfonac
There are possibility of risks of residual effect (persistence).
Current stimulation method for plant growthCurrent stimulation method for plant growth
Above figure is radish sprouts with irradiation of atmospheric oxygen plasma after 4 days of cultivation. This result implies unknown reaction of a living body.
plasma irradiationplasma irradiationcontrolcontrol
Detailed phenomena appeared on living bodyand the mechanism are still unknown.
Physical impactChemical reaction
Purpose
Purpose:Characteristics and mechanism of growth enhancement of plantsby plasma irradiation are attempted to be clarified from theviewpoint of antioxidative characteristics of living body.
The effect of growth enhancement is obtained by the plasma irradiation to seeds of plants. After seedling, there are not any stimulations to the plants.
Sample Gas : O2Pressure : 60 PaInput RF power : 60 WTreatment time : 30 120 min
RF plasma device and OES at the position of seeds varying O2 pressure
seeds on dish
450 [mm]
RFPowersupply8
[inch
]
OO22
CCP antenna
VacuumpumpStainless
Chamber
400 500 600 700 800 900 10000
2000
4000
6000
8000
10000 O 2 gas pressure 20 Pa 40 Pa 60 Pa 80 Pa
Inte
nsir
y (a
rb.u
nits
)W avelength (nm)
The relation between the emission intensity at wavelengths of 761nm and 777nm and oxygen pressure.
10 20 30 40 50 60 70 80 900
2000
4000
6000
8000
10000 1g+ at 761nm
O(3P) at 777nm
Inte
nsity
(arb
.uni
ts)
Pressure (Pa)
At 60 Pa, dominant particle is excited oxygen molecule 1
g+.
Variation of exterior of seeds after plasma irradiationVariation of exterior of seeds after plasma irradiation
without plasma irradiation plasma irradiation for 30min
When the seed is immersed in water, both the treated and untreated husk get wet in a few minutes. So, the hydrophilicity of husk does not relate to the germination enhancement.
There is no significant damage on the husk of seed.
Response to the plasma stimulus and reactions induced by plasma would occur inside the seed husk.
Effect on sprout germinationEffect on sprout germination
Atmospheric plasmaPower consumption 60 W / Gas OxygenIrradiation period 30 min / Temp. 21.5 oCSample : Raphanus sativus var. longipinnatus 'Kaiwaredaikon'
24 h after seeding
O2 plasma irradiation to seedscontrol
Effect on germination of sproutEffect on germination of sprout
1 2 30
20
40
60
80
100
Ger
min
atio
n ra
te (%
)
Cultivation period (day)
plasma irradiation control
Germination rates of Raphanus sativussprout with and without plasma irradiation.
Final germination ratecontrol (untreated) 90%irradiation for 30 min 95%irradiation for 60 min 95%
Final germination rate was not affected by the plasma irradiation.
In case of control, germination rate is 30% in one day after the seeding. In case of plasma irradiation, the rate increases to 80–90%. Plasma irradiation induces the germination, which leads to uniform growth of plants.
Growth enhancement of radish sproutGrowth enhancement of radish sprout
without plasma irradiation
plasma irradiation for 30min
Root length increased
Chlorophyll increased
48 h after seeding Atmospheric plasmaPower consumption 60 W / Gas OxygenIrradiation period 30 min / Temp. 21.5 oCSample : Raphanus sativus var. longipinnatus 'Kaiwaredaikon'
Temporal variation of sprout length after plasma irradiationTemporal variation of sprout length after plasma irradiation
0 30 600
20
40
60
80
100
120
140
160
180
99%
131%
156%
10
Ave
rage
d sp
rout
leng
th (%
)
Plasma irradiation period (min)
96 h after seeding
Sprout length becomes 1.5 times ofthe original length in 4 days after theirradiation.
0 20 40 60 80 1000
1
2
3
4
5
6
7
8
9 Air plasmaO2 plasma
Ave
rage
spro
ut le
nght
(cm
)
Cultivation period (h)
Material gas Oxygen, Air
Oxygen radicals is the importantfactor for the enhancement effect.
Reactions of intracellular substances of plantsReactions of intracellular substances of plantsinduced by plasma irradiationinduced by plasma irradiation
Reactions of intracellular substances are investigated.
Removal of intracellular active oxygenRemoval of intracellular active oxygen
Plant cell
AntioxidantsAntioxidantsgenerationgeneration
Active species Active species from plasmafrom plasma
Removal of Removal of excessexcessoxygenoxygen
Association of glutathione with flowering in Arabidopsis thalianaOgawa K, Tasaka Y, Mino M, Tanaka Y, Iwabuchi M., Plant Cell Physiol. 2001 May;42(5):524-30.
Removal of excess active oxygens by plasma irradiation leads togrowth enhancement of plants.
Excess active oxygens generates lipid peroxides
Antioxidant activity varying the plasma Antioxidant activity varying the plasma irradiation period.irradiation period.
Antioxidative activity of seed induced by oxygen plasmaAntioxidative activity of seed induced by oxygen plasma
0 5 10 15 20 25 300.0
0.5
1.0
1.5
2.0
Ant
ioxi
dant
act
ivity
(arb
.uni
ts)
Plasma irradiation period (min)
DPPHmethod
Quantification of antioxidative activity Quantification of antioxidative activity -- DPPH methodDPPH method
Oxygen plasma irradiation increases antioxidative activity in seed.
Active oxygen sensor: redox reactions of thiol compoundsActive oxygen sensor: redox reactions of thiol compounds
※
Structure
HOOCO
NH
SH
O
HN COOH
NH2 reduction type
HOOCO
NH
S
O
HN COOH
NH2
COOHO
HN
S
O
NH
HOOC
NH2
oxidation typeoxidation type
Thioredoxin Gultathione
Whole picture from plasma irradiation to growth enhancementWhole picture from plasma irradiation to growth enhancement
Thiol compoundsThiol compounds
Active oxygen gene expression
dissociationdissociationregulation
Redox reaction and activation of transcription factor for plantRedox reaction and activation of transcription factor for plant growthgrowth
Sensor of activeSensor of activeoxygensoxygens
““ThioredoxinThioredoxin””
SH
TrXTrX
SH S S
TrXTrXTranscription factorTranscription factorfor oxidative stressfor oxidative stress
production andactivation of MAPK
Transcription factorTranscription factorfor oxidative stressfor oxidative stress
activation oftranscription factor
antioxidativeantioxidativesubstancessubstances
cell cyclecell cycleaccelerationacceleration
0 5 10 15 20 25 300.0
0.5
1.0
1.5
2.0
Thio
l am
ount
(arb
.uni
ts)
Treatment period (min)
Air Plasma
0 10 20 30 40 50 600.0
0.5
1.0
1.5
2.0
Thio
l am
ount
(arb
.uni
ts)
Treatment time (min)
N2 Plasma
Relation between thiol quantity and growth enhancementRelation between thiol quantity and growth enhancement
0 5 10 15 20 25 30 350
2
4
6
8
10
Plasma irradiation period (min)
Ave
rage
d sp
rout
leng
th (c
m)
Averaged length of sprout0
2
4
6
8
10
Thiol amount (arb. units)
Thiol quantity
-5 0 5 10 15 20 25 30 350
2
4
6
8
10
114%
151%159%
Ave
rage
spro
ut le
ngth
(cm
)
Plasma irradiation period (min)
Relation between thiol quantity and growth enhancementRelation between thiol quantity and growth enhancement
Active oxygen irradiation(oxidative stress)
Oxidation of Thiol compounds
Activation of transcription factor
Activation of transcription factor andbind to DNA
Enzyme production
Plant hormone production
Growth enhancement of plantsGrowth enhancement of plants
Removal of active oxygen
Production of antioxidative substances
-SH -S-S-
Speculative route from plasma irradiation to growth enhancementSpeculative route from plasma irradiation to growth enhancement
Activation of Mitogen activated Protein Kinase
Blue parts are confirmedby experiments
Investigation of genetic mutation
It is important to investigate the genetic mutation, we use Arabidopsisof wild-type for scientific purpose and practical use of this technique.
Growth enhancement of Arabidopsis by plasma irradiationGrowth enhancement of Arabidopsis by plasma irradiation
control plasmairradiation
50 h
230 h
0 50 100 150 200 2500
20
40
60
80
100
120
140
160
Nor
mal
ized
scap
e le
ngth
(%)
Incuvation period from irradiation (h)
Atmospheric plasma
Arabidopsis thaliana Columbia 01Arabidopsis seed
Arabidopsis thaliana – model plant
Control Plasmairradiation30min
Plasmairradiation3min
Arabidopsis thalianaColumbia 01
Effect of multiple irradiation to seeds growth enhancement
Irradiation twice
Irradiation once
Untreated(wild-type)
Variation of leaf size after the multipleirradiation of plasma.
untreated Irradiation twice
twice once untreated
Multiple irradiation growth enhancement
Sample Gas : O2Pressure : 60 PaInput RF power : 60 WTreatment time : 30 120 min
Arabidopsiswild type(Columbia 01)
Dependence of total length of plant on the number of times of plasma irradiation.
Multiple irradiation length of leaf and scape
0 1 20
50
100
150
200 length of leaf length of scape
Leng
th (m
m)
Number of times of irradiationuntreated
3
Both leaf and scape length increases with the number of times of the plasma irradiation.
This fact implies that the genetic mutation by plasma irradiation occurs, and information of the growth enhancement is reserved in DNA.
Irradiation of excimer UV light to seeds
untreated
Ozone +excimer UV (172nm)
Auxin-like effect
Variation of root growth
Variation of root growth
Sterilization of Agricultural Products
Using Oxygen Radicals Produced by
Barrier Discharge
The advantage of plasma sterilizationToxicity freePersistence freeNo generation of resistant bacteria
0.5mm
4mm
37mm
15mm
6mm
15mm
Surface discharge
UV
Vis
Surface discharge and UV light
Sample setting
Production of active oxygen using discharge and UV light
+
+
Ozone concentration and generation of oxidants
Ozoneconcentration CI (5min) CI (10min) CI (20min)
Spore of Aspergillus Oryzae
w/o plasma irradiation 30 min plasma irradiation
w/o plasma irradiation 30 min plasma irradiation
Swab test and colony production
Spore of yeast / mold
Ozone 60ppm UV 254nm UV + ozoneControl
0 5 10 15 20
20
40
60
80
100
Inac
tivat
ion
rate
(%)
Plasma irradiation period (min)
plasma irradiationfor 5 minw/o treatment plasma irradiation
for 10minplasma irradiation
for 20min
Sterilization of lemon surface using discharge and UV light
1000 2000 3000 4000
0.00
0.05
0.10
0.15
0.20
without irradiationafter irradiation
Abs
orba
nce
(arb
.uni
ts)
Wavenumber (cm-1)
ATR FTIR spectra of Lemon peel surfaceAtmospheric torch plasma+UV light irradiation
N-H stretchingC-Cstretching C=O stretching
Amide I
C-H stretching
w/o plasma
plasma irradiation
Plasma irradiation to seeds of rice plantOxygen RF plasma, 60Pa, 60W, 30 - 90min
Plasma sterilizer
Rice seeds
0 20 40 60 80 1000
20
40
60
80
100
Inac
tivat
ion
rate
of m
old
Plasma irradiation period (min)
moldE. coil
E. coli
Inactivation rate of mold and E. coli varying treatment period.Oxygen RF plasma, 60Pa, 60W, 30 - 90min
Control
30min
90min
Mold on culture sheet.
ricerice
Control 60min
120min 180min
Sterilization of seed surface
0 20 40 60 80 100 120 140 160 180 2000
20
40
60
80
100
carrotcarrot
material gas oxygen plasma air plasma Ar plasma
Inac
tivat
ion
rate
of m
old
Plasma irradiation period (min)
Inactivation rate of mold varying treatment period. Oxygen RF plasma, 60Pa, 60W, 60 - 180min
rapidsterilization
Inactivation of Plant virus and RNA
Withouttreatment
Atmospheric plasmairradiation
Plasma irradiation to water with Cucumber mosaic virus RNA.
Power input 60 WGas : oxygenGas flow rate : 1.0 L/minTreatment period : 20 min
Withouttreatment
Atmospheric plasmairradiation
Inactivation of virus RNA
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• B1 B2365nm 450nm
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Future worksFuture works