Upload
others
View
1
Download
0
Embed Size (px)
Citation preview
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 1
Standard Operating Manual ___________________________________________________________
CVC601 Sputter System
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 2
Contents
1. Picture and Location
2. Process Capabilities
2.1 Cleanliness Standard
2.2 Possible Sputtering Materials
2.3 Process Specification
2.3.1 What the CVC601 Sputter Can Do
2.3.2 What the CVC601 Sputter Cannot Do
2.4 Sputtering Process Useful Information
3. Useful Information to Work in NFF
3.1 Emergency Responses and Communications
3.2 Become a Qualified CVC601 Sputter User
4. Operation Safety and Rules
4.1 Operation Safety
4.1.1 General Safety
4.1.2 Equipment Safety
4.2 Operation Rules
5. System Operation
5.1 CVC601 Sputter System Description
5.2 Initial Status Check
5.3 Initial System Check
5.4 Preparation before Sputter Process
5.4.1 Cooling Water Valves ON
5.4.2 DC Power Supply ON
6. CVC601 Operation
6.1 Wafer Load
6.2 Manual Operation
6.2.1 Base Pressure Evacuation
6.2.2 Cooling Water Supply
6.2.3 Throttle Valve Open
6.2.4 Argon Gas Supply and Control
6.2.5 DC Power Supply
6.2.6 DC Target Selection
6.2.7 Shutter Position Selection
6.2.8 Substrate Rotation
6.3 Start Process
6.3.1 Set Process time
6.3.2 Start Process
6.3.3 Shutter Opening
6.3.4 Process Completed
6.4 Equipment Shutdown
6.5 Wafer Unload
7. Process Recording during Process
8. Clean Up
9. Check Out
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 3
CVC601 Sputter System
1. Picture and Location
Fig.1 CVC601 Sputter system
The CVC601 Sputter system is located at NFF Phase II cleanroom, Room 2240.
2. Process Capabilities
2.1 Cleanliness Standard CVC601 sputter is classified as Non-Standard equipment.
2.2 Possible Sputtering Materials
Metal materials listed in our website, including TiW, Al, Cu, Au, etc…
2.3 Process Specification
2.3.1 What the CVC601 Sputter Can Do
Up to six pieces of 2, 3 or 4 inches full substrates.
Up to six pieces of 4” square glass substrates.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 4
2.3.2 What the CVC601 Sputter Cannot do
Substrate that generate particles during sputtering process.
Substrate that cannot sustain in high sputtering temperature.
Substrate that contains harmful substances.
No small samples that fixing on a substrate will be allowed.
TiW and Gold film sputtering over 5000A is approved on request.
Other metal films sputtering over 2um is approved on request.
No masking photoresist will be allowed.
2.4 Sputtering Process Useful Information
Typical film uniformity is around 10% for 6 wafers sputtering at the same time.
The vacuum required for good film adhesion must be <2x10-6
Torr, so overnight
chamber evacuation may be required.
Sputter rate of TiW is 175A/min, film thickness over 1000A need to divide into two
or more sessions, the power use is DC 2.5KW.
Sputter rate of Al-Si is 540A/min, film thickness over 5000A need to divide into two
or more sessions, the power use is DC 2.5KW.
Sputter rate of Cu is 1200A/min, film thickness over 1um need to divide into two or
more sessions, the power use is DC 2.5KW.
Sputter rate of Au is 162.5A/min, film thickness over 5000A is approved on request,
and the power use is RF 1.0KW. However, gold film sputter process will be carry
out by NFF technician.
As the temperature is quite high during sputter process. In order not to overheat the
target, no more than 10 minutes process time per run, and 15 minutes cool down
time is required between run. Also, cooling water supplied must be on before sputter
process starts.
3. Useful Information to Work in NFF
3.1 Emergency Responses and Communications
In case of emergency issues, please contact NFF staffs,
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 5
Preason Lee – Deputy Safety office (x7900),
CK Wong – senior technician (x7226)
In case of technical help, please contact NFF staffs,
CK Wong – senior technician (x7896)
Casper Chung –technician (x7896)
Brial Kwok – technician (x7896)
3.2 Become a Qualified CVC601 Sputter User
Please follow the procedures below to become a qualified user of the CVC601 sputter:
Read all materials provided on the NFF website of the CVC601.
Request CVC601 operation training and examination online.
4. Operation Safety and Rules
4.1 Operation Safety
4.1.1 General Safety
CVC601 user must familiar themselves with the following general safety issues:
Location of emergency exits and assembly points
Procedures for obtaining first aid assistance must be known.
Various alarm sounds and emergency call procedures must be known.
4.1.2 Equipment Safety
CVC601 user must be aware themselves of the following equipment safety issues:
In emergency when using the equipment, please push the emergency power button
of the DC power supply (Fig. 2) to interrupt the sputter power, and report to the NFF
staffs immediately. DO NOT attempt to resume the process before the problem is
solved.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 6
Fig.2 Emergency Power Button
If the equipment fails while being used, never try to fix the problem by your own,
please write down the problem information and report to NFF etching module staffs.
Be careful to the components of the equipment, which involves electric power, high
DC power, high temperature and mechanical hazard.
4.2 Operation Rules
Do not operate the equipment unless you are properly trained and authorize to
operate the equipment.
Reserve the equipment in NFF website in advance.
Reservation will be forfeited if user never shows up and check-in within half of the
session time and it may cause a $200 penalty.
Fill all the details of the log-sheet attached, i.e. date, name, project number, email,
project details, material …
Do not leave an on-going sputtering process unattended.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 7
5. System Operation
5.1 CVC601 Sputter System Description
The CVC601 is a production graded metal film deposition system that fully controlled
by processor. It consists of two DC magnetron sputtering guns with 8” diameter targets
and one RF magnetron gun with 6” diameter gold target. In addition a cryo-pump system
is used to achieve a high vacuum pressure range of 10-6
Torr. Therefore, with larger
target size and better base vacuum pressure, CVC601 offers a much better film quality
than the table-top scale sputter system.
5.2 Initial Status Check
Users are required to do the following checks before doing the sputtering process:
Please check the equipment status from the shutdown notice board in the NFF
reservation website.
If the equipment has been reserved, then check the user name and project number
that displayed on the dedicated LCD screen are correct (Fig. 3).
Please check-in the reserved equipment on your own within half of the session time.
To do the check-in, please scan your NFF access card over the card reader attached.
After checked-in the equipment, the red LED on the card reader will be ON.
If you are failed to do the check-in, there is an interlock, and you cannot operate the
equipment normally.
Before operate the equipment, make sure you have read and ready to fill the details
of the log-sheets attached.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 8
Fig.3 Reservation and Equipment check-in status LCD
5.3 Initial System Check
Visual check any water leakage from the equipment.
Check any abnormal sound coming from the equipment.
5.4 Preparation before Sputter Process
You are advised to do the following steps before start the sputter process.
5.4.1 Cooling Water Valves ON
Check the cooling water valves for the target has been turned ON (Fig.4). The water
valves can be accessed at the back side of the chamber. Please turn on the main
water valve and then individual cooling water valves according to the process target.
The water flow level can be observed with the flow meter, it is around 3.8 GPM.
However, CVC user should pay attention to the obstacles when accessing the water
valves, i.e. power/signal cables on the floor, pump pipes, etc….
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 9
Fig. 4 Cooling water valves and flow meter
5.4.2 DC Power Supply ON
Check the DC power supply has been switched ON (Fig.5). The switch can be
accessed at the backside of the DC power supply when open the cabinet door.
However, CVC user must pay attention when switch ON/OFF the DC power supply,
be careful not touching the power switches and power cord of other controllers.
Fig.5 DC power supply switch.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 10
6. CVC601 Operation
In order to get easy to work with the CVC601 operation, we have put different color
labels on the equipment control panels; user can follow the color labels defined in the
following section to do the operation.
6.1 Wafer Load
To do the wafer load/unload; please follow the blue labels step by step:
On the AV485 Automatic Valve Controller, click the STOP (blue label 1) button to
stop chamber evacuation. The red LED of the Hi-Vac will be off (Fig.6).
Then, click the VENT (blue label 2) button to vent the chamber to atmosphere
pressure. It takes around 5 minutes to achieve. At this stage, the red LED of the
VENT button and valve will be on (Fig.6). Once the chamber is returned to the
atmosphere pressure, then the red LED of the VENT button and the valve will be off
(Fig.6), and the cover of the loader can be lift up (Fig.7).
Fig.6 AVC485 Automatic Valve Controller
Fig.7 Wafer loader cover
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 11
Open and put the cover aside, then the wafer can be load/unload through the loading
port (Fig.8). Take out the dummy wafers on the substrate holder and put them into
the dummy wafer box provided if necessary. However, please make sure the wafers
must be loaded up-side down (sputter side face down).
Fig.8 Wafer Loading Port
There are totally 6 substrate holding positions. To rotate the holding position, please
switch on the Power (blue label 3) of the Rotostrate Controller pulse by pulse (Fig.9).
Then, the next holding position can be accessed. However, please check and make
sure there should be dummy wafers or device wafers on the substrate holder, don’t
leave any vacancy to the substrate holder.
Dangerous: please be reminded, do not put any hands to the moving substrate holder,
and wafers can only be loaded when the substrate holder is not running.
Fig.9 Substrate Rotation
After load/unload wafers, put back the wafer loader cover inside the blue circle
marked evenly. Then, power on the MECHANICAL PUMP (blue label 4) (Fig.10).
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 12
Fig.10 Mechanical Pump
Then click the START (blue label 5) button to start chamber evacuation. The red
LED of the START and ROUGH valve will be on (Fig.6).
Once chamber reached the crossover pressure, the Rough valve of the mechanical
pump will be turn off, and then the Hi-Vac valve of the cryo pump will be turn on
(Fig.6).
After the Hi-Vac valve and LED is on, then power off the MECHANICAL PUMP
(blue label 6) (Fig.10).
Finally, vent (blue label 7) the pump lines for 10 seconds to prevent oil back
streaming (Fig.11).
Fig.11 Gas Control Panel
6.2 Manual Operation
6.2.1 Base Pressure Evacuation
Typical base pressure for the process of Al is <2x10-6
Torr, and TiW and Au is
5x10-6
Torr<. It takes more than 3 hours to achieve base chamber pressure. To read the
base pressure of the chamber with the GIC400 controller, turn the selector to LOG level
(Fig.12). Then, hold both POWER and FILAMENT ON buttons together, the pressure
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 13
range can be read from pressure gauge at the right side. The gauge is ranging from 10-3
to 10-8
Torr. Then turn the selector to the correct pressure range, and details pressure can
be observed from the pressure gauge when holding both POWER and FILAMENT ON
buttons (Fig.12).
Fig.12 GIC 400 pressure controller
6.2.2 Cooling Water Supply
Check the status of cooling water, turn on the water valve (yellow label 1) according to
the station of the sputtered metal, and turn on the main water return valve (section
5.4.1).
6.2.3 Throttle Valve Open
To open the throttle valve, switch on the throttle valve (yellow label 2) on the gas control
panel (Fig.11). Then, check the throttle valve position by viewing from the side of the
cryo pump under the table top (Fig.13).
Fig.13 Throttle valve open/close position
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 14
6.2.4 Argon Gas Supply and Control
Switch on the argon gas supply (yellow label 3) on the gas control panel (Fig.11). Then,
switch on the main power of the MKS 247 pressure controller (yellow label 4) and the
power of gas channel 1 (Fig.14). The default argon flow rate is 40 sccm, and it takes 30
seconds to become stable.
Fig.14 MKS247 pressure controller
6.2.5 DC Power Supply
Switch on the power of the MDX DC power supply (yellow label 5) as mentioned in the
section 5.4.2.
6.2.6 DC Target Selection
Switch on the power of the target selector (yellow label 6), and then select the right
target by the selector (Fig.15). TiW target is located in station 1, Cu or Al target is
located in station 2, and Au is located in station 3.
Fig.15 DC target selector
6.2.7 Shutter Position Selection
Confirm and select the shutter position by using the shutter position selector switch
(yellow label 7). Typically, the shutter should be set in shutter position 2 if TiW (station
1) is going to sputter; oppositely the shutter should be set in shutter position 1 if Al or
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 15
Cu (station 2) is going to sputter (Fig.15).
6.2.8 Substrate Rotation
Switch on the power of the substrate rotation (yellow label 8) as shown in Fig.9. Then
observe the rotation table gear box and shaft is running under the chamber (Fig.16).
Fig.16 Substrate rotation
6.3 Start Process
Before starting the process, please confirm again the following items are ready.
Cooling water supplies and return are ready.
MDX DC power supply is switch on.
Target shutter is placing in a correct position.
To start the process, please follow the following steps
6.3.1 Set Process Time
The process time can be set on the PROCESS TIMER located in the Master Control in
decimal unit (Fig.17) (green label 1). Typical sputter rate of the metal films are mentioned
in section 2.4 and tabulated in the following table 1.0. However, there is a 3 minutes
pre-deposition time added for the DC power ramp up from 0 to 2.5KW for Al, TiW and
Cu material.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 16
Fig.17 Master Control
Table1.0 Metal film sputter rate
6.3.2 Start Process
The sputter process can be start by switching on both process timer and DC power
supply. To do this, use one hand to switch the button to the START position of TIMED
of MASTER CONTROL (green label 2) (Fig.17), and use the other hand to click ON
button of the OUTPUT of the MDX DC power supply (green label 3) (Fig.18).
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 17
Fig.18 DC power supply
6.3.3. Shutter Opening
As described, there is a 3 minutes pre-deposition time is required for the DC power ramp
up from 0 to 2.5KW. Therefore, the shutter can be open according to the metal film
sputtered. To do this, please observe the count down time displayed in the MDX power
supply (Fig.18). For sputtering Al or Cu film, when the count down time is 0.07s, switch
the shutter position button from TiW to Al/Cu. For sputtering TiW film, when the count
down time is 0.14s, switch the shutter position button from Al/Cu to TiW (green label 4)
(Fig.19).
Fig.19 Shutter position
6.3.4 Process Completed
Once the process time is over, then the process will be terminated.
6.4 Equipment Shutdown
After process, user is required to shut down the equipment oppositely according to the
turn on procedures and the yellow labels:
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Copyright © 11.2015 by Hong Kong University of Science & Technology. All rights reserved. Page 18
Switch off the power of substrate holder rotation (yellow label 8).
Switch off the power of DC target selector (yellow label 6).
Switch off the power of DC power supply (yellow label 5).
Switch off the power of the MKS247 controller (yellow label 4).
Switch off the Argon gas supply (yellow label 3).
Switch off the throttle valve (yellow label 2).
Switch off the water supplies and return valves (yellow label 1).
6.5 Wafer Unload
The wafers can be collect back 30 minutes after sputter process. The wafer unload
procedures are similar to the wafer load procedures; please refer to section 6.1 for
details.
7. Process Recording during Process
Please be reminded you are required to fill all the details of the log sheets. If users
fail to do this, a punishment will be given.
Write down any problems or comments in the log sheets
8. Clean Up
Clean up the area.
Put back the dummy wafer box to the original position.
Put back the tweezer to the original position.
9. Check Out
Check out the equipment immediately after use.