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<貴社内限定でご活用下さい>
© 2015, Toshiba Corporation. Rev.1.0 2015/12/23
Smart Gate Driver Coupler TLP5214 Application Note –Advanced ver.-
2 © 2015, Toshiba Corporation.
・ Setting and adjustment method of blanking time P3
・ Reference waveforms (changing CBLANK) P5
・ Confirmation of the switching time P6
・ IGBT over current sensing voltage setting P7
・ Relationship among propagation delay time, gate capacitance and P8
gate resistance
・ Relationship among soft-turn off time, Rg and Qg P9
・ Prevent false DESAT operation due to negative voltage spikes during IGBT
switching P10
・ External current booster (transistor buffer) P11
・ Blanking time adjustment by an external blanking circuit (using RB) P12
・ LED signal reshape P16
・ RESET function P17
・ Other notes P18
Contents
3 © 2015, Toshiba Corporation.
When the TLP5214 LED is turned on, the output voltage (Vout) increases. Then the IGBT is turned on. At this
time , in order to monitor the collector-emitter voltage (VCE), the external blanking capacitor (CBLANK) is charged
by a charging current (ICHG), flowing from the DESAT terminal, causing the DESAT terminal voltage to rise.
DESAT function should be disabled until VCE becomes lower than Vth(IGBT). This time is called blanking time
(tBLANK). This can be adjusted using CBLANK inserted between the DESAT and VE terminals. If the DESAT terminal
voltage exceeds the DESAT threshold voltage, 6.5V (typ.), TLP5214 starts soft turn-off of the IGBT.
The tBLANK needs to be (1) longer than the time tth that VCE reaches
Vth(IGBT), and (2) shorter than the IGBT short-circuit time tsc.
*Vth(IGBT):P.6
Setting and adjustment method of blanking time
VCE
VGE
IF
Vth(IGBT)
DESAT voltage
Blanking time is adjusted by CBLANK.
tBLANK The invalid time of over current protection
The over current protection function time
Monitor IGBT voltage (contain Di, R)
CBLANK
VGE
VCE
ICHG
VLED
VCLAMP
VEE
DESAT
Vcc2
Rf
0.1μF
P
N
VCLAMP
DR
IVER
UVLO
SHIELD
DESAT
TLP5214
LED Signal
Contr
oller
IF
VE
Vout
RDESAT
1μF
1μF
RG
Rpull
1μF
VDESAT≃ 6.5 V
IC
VE
tth
VF +(RDESAT×ICHG) +VCE(sat)
4 © 2015, Toshiba Corporation.
0
2
4
6
8
10
0 100 200 300
tBLANK - CBLANK
CBLANK (pF)
t BLA
NK (μ
s)
Setting and adjustment method of blanking time
tBLANK can be calculated by CBLANK , VDESAT and ICHG.
tBLANK = CBLANK × VDESAT / ICHG
Where, VDESAT is 6.5 V (typ.) and ICHG is 240 μA (typ.).
Example)
When the CBLANK is 100 pF, tBLANK is calculated as
tBLANK = 10-7 F x 6.5 V / (2.4 x 10-4) A
= 2.7 μs
The relationship between CBLANK and tBLANK is
shown in the graph below.
VCE IC
DESAT terminal
voltage
IF
Over current
Protection term
CBLANK Small Large
tBLANK
Over current
protection invalid
term
Over current protection invalid
period is adjusted by CBLANK.
VDESAT ≃ 6.5 V
Small
Large
5 © 2015, Toshiba Corporation.
Reference waveforms (Changing CBLANK)
TLP5214 CBLANK = 100 pF TLP5214 CBLANK = 200 pF
DESAT and Vout terminal waveforms when the TLP5214 LED is turned on are shown below.
*Measured waveform contains stray capacitance of PCB and probe
capacitance.
t1 (Delay time)
It is confirmed that tBLANK is changed by CBLANK.
Left figure is DESAT terminal voltage waveform of ACPL-332J. ACPL-332J has a delay time (t1). The behavior at the LED turning on period of ACPL-332J is different from TLP5214. If you replace the ACPL-332J with the TLP5214, you need to check the circuit operation.
※Reference (ACPL-332J)
tBLANK
Ta=25℃ IF=10mA,VCC2=30V Rg=10Ω,Cg=25nF
1μs 1μs
1μs
tBLANK
Ta=25℃ IF=10mA,VCC2=30V Rg=10Ω,Cg=25nF
Ta=25℃ IF=10mA,VCC2=30V Rg=10Ω,Cg=25nF
6 © 2015, Toshiba Corporation.
GT30J341
Confirmation of the switching time
15V
To check if the switching time of IGBT turn-on is below tBLANK.
Condition: tpLH of TLP5214 + tON* of IGBT = Switching time < tBLANK *where, tth is similar to tON.
tpLH: 150 ns (max) from TLP5214 datasheet.
tON: estimates from Qg of IGBT, IO of TLP5214 (formula; tON = Qg/IO)
Example)
When IGBT (GT30J341) switches at VGE = 15 V and IO = 1.5 A, Qg is
130 nC using the IGBT’s VCE, VGE-Qg characteristics.
The tON is estimated as below;
tON=130 nC / 1.5 A ≃ 87 ns
Therefore, the switching time criteria is satisfied.
switching time = 150 ns + 87 ns = 237 ns < 2.7 μs** (**tBLANK:P.3)
It is recommended to use
a large CBLANK that satisfies
the relationship between
tBLANK and tsc, which is
explained on page 3.
VCE IC
DESAT terminal voltage
IF
VO
IO
TLP5214: tpLH IGBT: tON
tBLANK
Switching time < tBLANK
Vth(IGBT)
VE
VDESAT ≃ 6.5V
If tBLANK is shorter than switching time of IGBT, TLP5214 malfunction may occur.
7 © 2015, Toshiba Corporation.
VCE
DESAT terminal voltage
IF
VO
VF × n
Vcc2
P
N
TLP5214
VCLAMP
VEE
VO
VDESAT
CBLANK
RG
RPullDow
n
VE During normal operation, a forward current flows at the DESAT diode to monitor the VCE of IGBT. In case of a high wattage application, the over current protection function may malfunction due to reverse recovery spikes at the freewheel diode in the IGBT. In order to minimize the reverse recovery current, a FRD with smaller capacitance is recommended.
IGBT over current sensing voltage setting
Vth(IGBT)
New Vth(IGBT)
100Ω ①
②
example
Using the Zener diode, you can tune Vth(IGBT) with a high accuracy.
VDESAT ≃ 6.5 V
IC
VF × n
Voltage of DESAT pin changes due to VF of diode and Vz of Zener diode.
TLP5214’s VDESAT is 6.5V (typ.). However, if the threshold voltage of IGBT short (Vth(IGBT)) needs to be lower,
there are two ways to accomplish this requirement: (1) using the VF of external multiple DESAT diodes, or
(2) using Zener diodes.
1.New Vth(IGBT) = VDESAT - (n x VF + RDESAT x ICHG) n: number of diodes
2.New Vth(IGBT) = VDESAT - (VF + Vz + RDESAT x ICHG) Vz: Zener voltage
Example) If diodes are used (VF = 0.4 V@240 μA) and RDESAT is 100 Ω, the new Vth(IGBT) is changed per below;
New Vth(IGBT) = 6.5 – (3 x 0.4 V + 100 Ω x 240 μA) ≃ 5.3 V
8 © 2015, Toshiba Corporation.
0
50
100
150
200
10 20 30 40 50
t PLH/t P
HL
(ns)
Cg (nF)
tpLH/tpHL - Cg
0
50
100
150
200
0 10 20 30 40 50
t PLH/t P
HL
(ns)
Rg (Ω)
tpLH/tpHL - Rg
VEE = 0 V Rg = 10 Ω
VEE = 0 V Cg = 25 nF
Relationship among propagation delay time, gate capacitance and gate resistance
IF = 10 mA (P.G.) (f =10 kHz, duty = 50 %, tr = tf < 5 ns)
tpLH
tpHL
tpLH
tpHL
9 © 2015, Toshiba Corporation.
The TLP5214 soft turn-off time(tDESAT(10%))
depends on the gate resistance (Rg), the gate
capacitance(Cg) and the output supply voltage (VCC2).
Soft turn-off time
0
2
4
6
8
10
0 10 20 30 40 50
t DES
AT(1
0%
) (μ
s)
Cg (nF)
tDESAT(10%) – Cg
Vcc2=15V
Vcc2=30V
0
2
4
6
10 20 30 40 50
t DES
AT(1
0%
) (μ
s)
Rg (Ω)
tDESAT(10%) – Rg
Vcc2=15V
Vcc2=30V
VEE = 0 V Rg=10 Ω
VEE = 0 V Cg = 25 nF
Relationship among soft-turn off time, Rg and Qg
10 © 2015, Toshiba Corporation.
Prevent false DESAT operation due to negative voltage spikes during IGBT switching
One of the reason for DESAT false triggering is caused by a forward current flow which is generated by forward biasing at the DESAT built-in diode. This occurs by pulling the DESAT pin voltage below GND level due to reverse recovery spikes of the freewheeling diode (the negative spike are generated by inductive loads or reverse recovery spikes of IGBT/MOSFETs freewheeling diodes). To minimize this malfunction, it is recommended to connect properly rated Zener and Schottky diodes between DESAT – VE. The Zener diode (VZ = 7 to 8 V) prevents any high transient voltage which can affect the DESAT pin while the Schottky diode prevents the forward biasing of the built-in diode.
*A negative power supply
is used
RG
1uF
1uF
1uF
10Ω
25nF
RB
RDESAT DDESAT
CBLANK
P
N
TLP5214
11 © 2015, Toshiba Corporation.
External current booster (transistor buffer)
The TLP5214 can output 4A (max). If the current is not enough to drive the IGBT, a buffer
(a pair of NPN and PNP transistors) can be used as a current booster.
A 25 nF capacitor is connected across buffer input and VEE, and a 10 Ω resistor is connected
across the photocoupler Vout pin and the buffer input, as shown below. These passive devices
are necessary for soft turn-off of the IGBT in the event that desaturation does occur.
If VCLAMP is not used (e.g. using a negative voltage source), this pin should be connected to
the VEE pin.
P/N Max. rating
Package
NPN PNP VCEO (V) IC (A) PC (W)
TTC3710B TTA1452B 80 12 30 TO-220SIS
TTA1452B
TTC3710B
Below transistors and diodes are recommended as the
buffer transistors and DESAT diode respectively.
P/N Max. rating Characteristics (Max.)
Package VRRM (V) IF(AV) (A) VFM (V) @IFM (A)
CRF02 800 0.5 3.0 0.5 S-FLATTM
CRF03 600 0.7 2.0 0.7
CMF05 1000 0.5 2.7 0.5 M-FLATTM
Transistors example
Diodes example RG
1uF
1uF
1uF
10Ω
25nF
RB
RDESAT
DDESAT
CBLANK
P
N
TLP5214
12 © 2015, Toshiba Corporation.
Blanking time adjustment by an external blanking circuit (using RB)
The method shown below uses one external resistor (RB), connected between the photo- coupler output and the DESAT pin. This circuit creates an additional blanking capacitor current (IB) from the TLP5214 output through the RB for charging the blanking capacitor (CBLANK). By controlling the charging current of CBLANK using the RB, the blanking time (tBLANK) can be adjusted with high flexibility. (Note: If no SBD is connected across the VE and the DESAT pins, the DESAT function may be falsely triggered.)
>>Calculation VI=VOUT-VE
=RB x i(t) +1/CBLANK∫(ICHG +i(t)dt)) i(t) = (VI/RB+ ICHG) exp(-t/(CBLANK x RB)) - ICHG
VDESAT (t) = VI – RB x i(t) = VI - (VI + RB x ICHG )exp (-t/(CBLANK x RB)) +RB x ICHG
tBLANK = - CBLANK x RB x log( 1- VDESAT/(VI+RB x ICHG) ) Example) CBLANK=300pF、RB=30kΩ、VOUT=17V、VEE=10 V [VDESAT=6.5V, ICHG=0.25mA・・・referred from the datasheet] t = - 300x10-12 x 30x103x log(1-6.5/(17+30x103x250x10-6) = - 9000 x 10-9 x log (1-6.5/(17+7.5)) = -9 x10-6 x log (0.7346) = 2.774 x10-6 tBLANK : 2.8 μs
ICHG
IB
1uF
1uF
1uF
10Ω
25nF
RB
RDESAT DDESAT
CBLANK
P
N
TLP5214
13 © 2015, Toshiba Corporation.
Below is an example of the measured waveform using this method. (Condition: CBLANK = 100 pF, RB = 30 kΩ, VCC2 = 17 V, VEE = 10 V)
RB=30kΩ
RB: none (open)
1.2us
3.1us
In case no RB is used, tBLANK is measured as 3.1 μs. When RB is used, it becomes 1.2 μs due to the addition of IB through the resistor. This allows using a large CBLANK with short tBLANK which satisfies the tsc of IGBT.
CBLANK = 100 pF
RB = 30 kΩ
IF
VOUT
DESAT
FAULT
IF
VOUT
DESAT
FAULT
Test circuit (adding RB to the tDESAT measurement circuit)
10V
17V
SCOPE
Blanking time adjustment by an external blanking circuit (using RB)
14 © 2015, Toshiba Corporation.
These waveforms show tBLANK dependence on CBLANK. (Condition: RB = 30 kΩ, CBLANK = 50 to 1000 pF, VCC2 = 17 V, VEE = 10 V)
CBLANK = 100 pF
CBLANK = 50 to 1000 pF
RB = 30 kΩ
CBLANK = 330 pF CBLANK = 680 pF
0
2
4
6
8
10
0 200 400 600 800 1000
t BLA
NK(μs)
CBLANK(pF)
実測値
計算値
Measured Calculated
IF
VOUT
DESAT
FAULT
IF
VOUT
DESAT
FAULT
IF
VOUT
DESAT
FAULT
10V
17V
SCOPE
Blanking time adjustment by an external blanking circuit (using RB)
15 © 2015, Toshiba Corporation.
10V
17V
SCOPE
These waveforms show tBLANK dependence on RB.
CBLANK = 330 pF
RB = 330 to 30 kΩ
RB = 1 kΩ RB = 30 kΩ
0
2
4
6
8
10
0 10000 20000 30000
t BLA
NK(μs)
RB(Ω)
実測値
計算値
IF
VOUT
DESAT
FAULT
IF
VOUT
DESAT
FAULT
Blanking time adjustment by an external blanking circuit (using RB)
Measured Calculated
16 © 2015, Toshiba Corporation.
Rf
0.1μF
DR
IVER
SHIELD
TLP5214
LED signal Contr
oller
IF
If wiring between the control unit and the motor drive unite is long, the input signal shape at the TLP5214 input pins may be distorted due to the wire inductance between the TLP5214 and the CPU.
LED signal reshape
74VHCV244FT
LED current limiter
To reshape the input signal, using a buffer with hysteresis is recommended.
Buffer IC example
P/N Function VCC(opr) |IOH|/IOL tpd Package
74VHCV244FT Octal Schmitt Bus Buffer
1.8 to 5.5 V 16 mA 3.9 ns (typ.) TSSOP20B
17 © 2015, Toshiba Corporation.
RESET function
The TLP5214 operation is resumed from the soft turn-off mode by the LED input signal change. Thus, while the TLP5214 operation goes to the FAULT mode due to the IGBT desaturation, the FAULT output is changed to normal followed by the LED OFFON, and then, the photo-coupler resumes normal operation.
There are several ways of resuming normal operation for smart gate driver couplers, listed below … - LED triggering (e.g. TLP5214) - Auto-reset (FAULT signal is automatically reset after a certain period of time) - Using external reset signal
DESAT terminal voltage
≃ 6.5V
IF
VO
tBLANK
FAULT terminal output
tDESAT(FAULT)
DESAT端子電圧が 規定値を超え、Voが保護動作に入る。FAULT信号 H→L
Timing chart of TLP5214 (FAULT condition)
When the DESAT pin voltage reaches to 6.5 V, Vo changes to low (soft-shutdown) and the FAULT output changes from high to low.
FAULT mode is unlocked when the LED OFFON
Since the TLP5214 method for “resumption back to normal operation” is different than (1) auto-reset mode driver couplers, and (2) external reset signal type driver couplers, additional circuitry is required.
18 © 2015, Toshiba Corporation.
①A ceramic by-pass capacitor (1 μF) should be connected between VCC2 – VEE and VE – VCC2 to
stabilize the operation of the internal high gain linear amplifier. Furthermore, in case of use of a
negative power supply, a 1 μF ceramic bypass capacitor is also connected between VE – VEE.
② A ceramic capacitor (0.1 μF) should be connected between VCC1 - Vs.
③ The VLED pin should not be connected to others pins.
④ If the active Miller clamping function do not be used, VCLAMP pin should be shorted to the VEE
pin.
Other notes
VLED
VCLAMP
VEE
DESAT
Vcc2
Rf
0.1μF
P
N
VCLAMP
DR
IVER
UVLO
SHIELD
DESAT
TLP5214
Contr
oller
VE
Vout
RDESAT
1μF
1μF
RG
Rpull
1μF
① ①
② ③
④
①
19 © 2015, Toshiba Corporation.
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© 2015, Toshiba Corporation.
21 © 2015, Toshiba Corporation.
Revision history
Revision Revision date Page Nature of revision
Rev.1.0 2015/12/23 - 1st edition