SM72295: Highly Integrated Gate Driver for 800VA to 3KVA ... · PDF file1.3 Low Frequency 600VA to 3KVA Pure Sine Wave Inverter Design ... half-bridgeconverters or synchronous buck

Application ReportSNVA678B–September 2012–Revised May 2013

AN-2296 SM72295: Highly Integrated Gate Driver for800VA to 3KVA Inverter

.....................................................................................................................................................

ABSTRACT

This application note describes the design principles and circuit operation of TI’s highly Integrated Gatedriver in the Low Frequency Inverters.

The inverter industry is expected to witness many technological innovations in the coming years to cater toa larger number of applications and new categories of end users. The demand from retail showrooms,small offices and residential use is primarily for 800VA, 1 kVA, 1.4 kVA and 2 kVA inverters. Being ahighly fragmented, competitive and growing market, it is in desperate need of constant Innovation andIntegration.

Contents1 Introduction .................................................................................................................. 2

1.1 Basics of Gate Drive Requirement .............................................................................. 21.2 Bootstrap circuit Principle for High Side Gate Drive ........................................................... 31.3 Low Frequency 600VA to 3KVA Pure Sine Wave Inverter Design .......................................... 4

2 SM72295– Achieving High Integration in Current LF Inverter Design ............................................... 72.1 Application Schematic — SM72295 in 800VA Pure Sine Wave Inverters ................................. 82.2 Easy Design Guidelines for Integrated Current Sensing ..................................................... 92.3 Layout Guidelines ................................................................................................ 10

3 Test Results in 850VA Pure Sine Wave Inverter Applications ...................................................... 113.1 Inverter Mode ..................................................................................................... 113.2 Charger Mode/Mains Mode ..................................................................................... 13

List of Figures

1 Simplified Model of a Non Inverting Gate Driver IC and a Power MOSFET ....................................... 2

2 A Closer Look of Driver Driving the MOSFET .......................................................................... 2

3 Power MOSFET Gate Drive Characteristics ............................................................................ 3

4 Bootstrap Supply Circuit ................................................................................................... 4

5 Inverter’s Block Diagram .................................................................................................. 5

6 Gate Drive Inputs in Inverter Mode ...................................................................................... 6

7 Inverter Mode Operation .................................................................................................. 6

8 Block Diagram of SM72295 Gate Driver ................................................................................ 7

9 SM72295 in 800VA pure Sine Wave Inverters.......................................................................... 8

10 Integrated Current Sensing Amplifier..................................................................................... 9

11 Inputs to Gate Driver in Inverter Mode with Load of 700VA ......................................................... 11

12 Signal Integrity from Input to Output Gate Drives in Low Side MOSFETs on 700VA Load in InverterMode. ....................................................................................................................... 12

13 Signal Integrity from Input to Output Gate Drives in High Side MOSFETs on 700VA Load in InverterMode ........................................................................................................................ 13

14 Inputs to Gate Driver in Mains Mode With AC Mains Input of 220V................................................ 14

15 Signal Integrity from Input to Output Gate Drives in Low Side MOSFETs in 220V AC Mains Mode........... 14

16 Signal Integrity from Input to Output Gate Drives in High Side MOSFETs in 220V AC Mains Mode. ......... 15All trademarks are the property of their respective owners.

1SNVA678B–September 2012–Revised May 2013 AN-2296 SM72295: Highly Integrated Gate Driver for 800VA to 3KVAInverterSubmit Documentation Feedback

Copyright © 2012–2013, Texas Instruments Incorporated

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PWM

Driver

VCC

P

N

S

MOSFET

CDS

CGS

CGD

D

SW-Node

GTurn On

Turn Off

ControllerInput

GateDriver

Gate RG

CGD

CGS

LD

Drain

LS

CDS

Power MOSFET

Source

Introduction www.ti.com

1 Introduction

Gate Driver is a power amplifier that accepts a low-power input from a controller IC and produces theappropriate high-current gate drive for a power MOSFET. The gate driver must source and sink current toestablish required Vgs. A gate driver is used when a pulse width- modulation (PWM) controller cannotprovide the output current required to drive the gate capacitance of the MOSFET. Gate drivers may beimplemented as dedicated ICs, discrete transistors, or transformers. They can also be integrated within acontroller IC. Partitioning the gate-drive function off the PWM controller allows the controller to run coolerand be more stable by eliminating the high peak currents and heat dissipation needed to drive a powerMOSFET at very high frequencies.

1.1 Basics of Gate Drive Requirement

Figure 1. Simplified Model of a Non Inverting Gate Driver IC and a Power MOSFET

A Real MOSFET’s Properties

• Fundamentally a voltage controlled switch.

• Inherent parasitic capacitors.

• Rds(ON) is not negligible.

This leads to the requirement of Gate driver which must source and sink current to establish requiredthreshold voltage from Gate to Source Vgs.

Figure 2. A Closer Look of Driver Driving the MOSFET

2 AN-2296 SM72295: Highly Integrated Gate Driver for 800VA to 3KVA SNVA678B–September 2012–Revised May 2013Inverter Submit Documentation Feedback


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VS

G, G

ate-

To-

Sou

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Vol

tage

(V

)

QG, Total Gate Charge (nC)

www.ti.com Introduction

Figure 1 shows the simplified model, including the parasitic components that influence high-speedswitching, gate-to-source capacitance (CGS), the gate-to-drain capacitance (CGD), and drain-to-sourcecapacitance (CDS).Values of the source inductance (LS) and drain inductance (LD) depend on theMOSFET’s package. The other parasitic component is RG, the resistance associated with the gate signaldistribution within the MOSFET that affects switching times. An important attribute for the gate driver is itsability to provide sufficient drive current to quickly pass through the Miller Plateau Region of the power-MOSFET’s switching transition. This interval occurs when the transistor is being driven on or off, and thevoltage across its gate-to-drain parasitic capacitor (CGD) is being charged or discharged by the gatedriver. Figure 3 plots total gate charge as a function of the gate-drive voltage of a power MOSFET. Totalgate charge (QG) is how much must be supplied to the MOSFET gate. to achieve full turn-on. It is usuallyspecified in nanocoulombs (nC).

Figure 3. Power MOSFET Gate Drive Characteristics

1.2 Bootstrap circuit Principle for High Side Gate Drive

The gate drive requirements for a power MOSFET utilized as a high side switch, in applications like Fullbridge, half-bridge converters or synchronous buck converters can be summarized as follows:

• Gate voltage must be 6 to 12V higher than the source voltage. To fully enhance a high side switch, thegate to source voltage would have to be higher than the threshold voltage plus the minimum necessaryvoltage to fully enhance the MOSFET

• The gate voltage must be controllable from the logic level, which are normally referenced to ground.Thus, the control signals need to be level shifted to the source terminal of high side MOSFET (HSnode), which in most applications, swings between ground and the high voltage rail.

The Bootstrap supply technique is a simple, cost-effective way to power the upper MOSFET’s gate andprovide bias supply to the floating logic sections of the Gate Driver. Only two components (a Bootstrapdiode and capacitance) per bridge phase are needed to implement the Bootstrap supply.



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DC Supply

Load

Q1

Q2RG2

RG1VDD

VDD

VB

HO

VS

LOCOM

CBoot

DBootRBoot

ILoad

Bootstrap Charge Current Path

Bootstrap Discharge Current Path


Figure 4. Bootstrap Supply Circuit

Using this circuit, the Bootstrap Capacitor is charged to ground through the Low side FET. When the Lowside FET is turned off, the bottom of the capacitor flies up and this creates a voltage greater than Vcc.This voltage is applied to the High side gate driver.

1.3 Low Frequency 600VA to 3KVA Pure Sine Wave Inverter Design

There is a dual mode of operation in a residential Inverter ie Mains mode and Inverter mode. As shown inFigure 5, the Input AC voltage is fed to the transformer through a switch (relay). In the mains mode, wheninput AC is present and is within valid range, the switch is closed and the input AC directly goes to theoutput load. The same AC is fed to transformer, and the H-bridge consisting of MOSFETs or IGBTs aredriven through microcontroller or DSP to charge the battery. A bridge less rectification principle is used tocharge the battery by boosting the voltage produced in the transformer primary using the inductance of thewinding, by switching the lower MOSFET banks. The lower MOSFET switches are switched and upperswitches kept turned OFF, The body diodes of the upper MOSFETS will act as rectifiers. The pulse widthof the switching pulses of the lower bank is proportional to the output charge current.



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Mains Input

Output Load

SwitchBattery Bank

DSP Control

Inverter Section

Power Stage Power Transformer

T15 1

3 4

C2

www.ti.com Introduction

Figure 5. Inverter’s Block Diagram

The DC/AC inversion can be achieved using any one of the two following methods.

The method in which the low voltage DC power is inverted, is completed in two steps. The first is theconversion of the low voltage DC power to a high voltage DC source, and the second step is theconversion of the high DC source to an AC waveform using pulse width modulation.

Another method to complete the desired outcome would be to first convert the low voltage DC power toAC, and then use a transformer to boost the voltage to 120/220 volts. The widely used method in thecurrent residential inverter is the second one . Here if the AC fails or is out of valid range (AC VoltageSense is required), the switch between Mains Input and Output Load opens. H-bridge circuit convertsbattery DC voltage into AC using high frequency PWM (5 kHz to 15 KHz) thus feeding the sametransformer which is being used for charging in the mains mode. The output of transformer contains acapacitor which filters it to make 50 Hz AC.



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OFF PWM PWM OFF

ON Complementary PWM Complementary PWM ON

1

5 8

4C1

T1

D3

D1 D2

D4

BAT+

Q3

Q4

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Battery BT1

INV O/P

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Three Level PWM Signal


Figure 6. Gate Drive Inputs in Inverter Mode

Figure 7. Inverter Mode Operation

For the Positive Half of the Sine Wave generation, Q2 is always high ,Q1 is always off , Q3 is applied with6.4KHz (6.4KHz to 20KHz) PWM corresponding to Positive Half cycle 50Hz sine wave and Q4 is appliedwith corresponding complementary (to Q3) PWM . For the Negative Half 50Hz sine wave generation , Q4is always high , Q3 is always off , Q1 is applied with 6.4KHz PWM corresponding to positive half cycle50Hz sine wave and Q2 is applied with Q1's complementary PWM .



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LIA

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50k

50k

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100V Bootstrap DiodeVCCA

Integrated Current Sensing Amplifiers

100V Bootstrap Diode

www.ti.com SM72295– Achieving High Integration in Current LF Inverter Design

2 SM72295– Achieving High Integration in Current LF Inverter Design

The SM72295 is a full bridge MOSFET driver with 3A (higher no. of FETs in parallel for high power) peakcurrent drive capability with

1. Integrated ultra fast 100V boot strap diodes (can easily support up to 5KVA rated inverters)

2. Two high side current sense amplifiers with externally programmable gain and buffered outputs whichcan be used for measuring the Battery charge and discharge current – Additional current senseamplifiers and buffers are not required

3. Programmable over voltage protection – which can be used for Charge complete detection or for drivershutdown feature in case of a fault condition

4. Can be directly interfaced with a microcontroller

Figure 8. Block Diagram of SM72295 Gate Driver



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SM72295– Achieving High Integration in Current LF Inverter Design www.ti.com

2.1 Application Schematic — SM72295 in 800VA Pure Sine Wave Inverters

Figure 9. SM72295 in 800VA pure Sine Wave Inverters



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+

BPI

Discharge ChargeShunt

LOAD/Charger

Gain = RC2/RC1

Charge Current Signal

RC2RC1

RC1SOB

SIBIOUT

SIA

SOAIIN

RD1

RD1RD2

Gain = RD2/RD1

Discharge Current Signal

Voltage Source

RSENSE

VSENSE ISENSE

LOADRR

SIA SOA

Drop Across R is VSENSE

Current Through FET is VSENSE/R

P Channel FET

Current Sense AmplifierIOUT

R0

V0 = (VSENSE*R0)/R

SIA SOA IN

VDD CLAMP

BIN

BOUT

+

+

SIB SOB OUT

+

+

VDD CLAMP

+

+

www.ti.com SM72295– Achieving High Integration in Current LF Inverter Design

2.2 Easy Design Guidelines for Integrated Current Sensing

In the Inverter design, the charge current during the Mains mode and discharge current during the invertermode is needed to be measured and given to the ADCs of microcontroller or DSP.

In SM72295, Current sensing is provided by two transconductance amplifiers with externallyprogrammable gain and filtering to remove ripple current to provide average current information to thecontrol circuit. The current sense amplifiers have buffered outputs available to provide a low impedanceinterface to an A/D converter.

Figure 10. Integrated Current Sensing Amplifier



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SM72295– Achieving High Integration in Current LF Inverter Design www.ti.com

Hence the charge and the discharge current can easily be measured by giving individual gain to each ofthem. The charging current is generally pretty less than the possible Discharging current in 800VA LowFrequency inverter. The Maximum charging current for 150-165AH battery is close to 15A while thedischarging current can goes upto 60A-70A.

2.2.1 Steps of Current Sense Design1. Current Sense Resistance is chosen based on Max current and respective power dissipation on

Current Sense resistance. In this Design, two 2W 1 milliohm resistances in parallel were chosen sothat even at 70A Discharge current in Inverter mode, the power dissipation is 2.45W which is muchlesser than allowed 4W(2W each of parallel 1milliohm Resistance).

2. There is VDD (3.3V) clamped at the Current Sense amplifier output and hence the gain should bemaintained in such a way that the output is not clamped in the area of interest. The Discharge currentgain is achieved through R33 / R11 (refer to application Schematic) which comes out to be the gain of78 in this application. Even at 70A discharge current, the BIN= 2.73V which is lower than VDD clamp.

3. Since the Maximum Charge current in this application is close to 15A, the gain of this section ismaintained higher through R34/R15 ratio.

2.3 Layout Guidelines

The optimum performance of high and low-side gate drivers cannot be achieved without taking dueconsiderations during circuit board layout. Following points are emphasized.

1. Low ESR / ESL capacitors must be connected close to the IC, between VDD and VSS pins andbetween the HB and HS pins to support the high peak currents being drawn from VDD during turn-onof the external MOSFET.

2. To prevent large voltage transients at the drain of the top MOSFET, a low ESR electrolytic capacitormust be connected between MOSFET drain and ground (VSS).

3. In order to avoid large negative transients on the switch node (HS pin), the parasitic inductances in thesource of top MOSFET and in the drain of the bottom MOSFET (synchronous rectifier) must beminimized.

4. Grounding Considerations

(a) The first priority in designing Grounding Consideration is a part in layout Guidelines. connections isto confine the high peak currents that charge and discharge the MOSFET gate into a minimalphysical area. This will decrease the loop inductance and minimize noise issues on the gateterminal of the MOSFET. The MOSFETs should be placed as close as possible to the gate driver.

(b) The second high current path includes the Bootstrap capacitor, the Bootstrap diode, the localground referenced bypass capacitor and low-side MOSFET body diode. The Bootstrap capacitor isrecharged on a cycle-by-cycle basis through the Bootstrap diode from the ground referenced VDDbypass capacitor. The recharging occurs in a short time interval and involves high peak current.Minimizing this loop length and area on the circuit board is important to ensure reliable operation.



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Channel 1-BLI Channel 2-BHI Channel 3-ALI Channel 4-AHI

OFF PWMPWM OFF

ON Complementary PWM Complementary PWM ON

1

5 8

4C1

T1

D3

D1 D2

D4

BAT+

Q3

Q4

RSENSE

Battery BT1

INV O/P

Q1

Q2

www.ti.com Test Results in 850VA Pure Sine Wave Inverter Applications

3 Test Results in 850VA Pure Sine Wave Inverter Applications

3.1 Inverter Mode

Figure 11. Inputs to Gate Driver in Inverter Mode with Load of 700VA



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Channel 1-ALI Channel 2-ALO Channel 3-BLI Channel 4-BLO

Test Results in 850VA Pure Sine Wave Inverter Applications www.ti.com

Figure 12. Signal Integrity from Input to Output Gate Drives in Low Side MOSFETs on 700VA Load inInverter Mode.



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Channel 1- Probe Across BHO and BHS

Channel 1- BHO Channel 2-BHS Channel 3- BHI Channel between 1 and 2 ± Maths 1-2 for VGS


Figure 13. Signal Integrity from Input to Output Gate Drives in High Side MOSFETs on 700VA Load inInverter Mode

3.2 Charger Mode/Mains Mode1. During Mains mode, the same transformer which is used in DC/AC inversion by boosting battery

voltage to line voltage in inverter mode, is connected to the mains power using a relay. A bridge lessrectification principle is used to charge the battery by boosting the voltage produced in the transformerprimary using the inductance of the winding, by switching the lower MOSFET banks..

2. The lower MOSFET switches are switched and upper switches kept turned OFF, The body diodes ofthe upper MOSFETS will act as rectifiers. The pulse width of the switching pulses of the lower bank isproportional to the output charge current.



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Channel 1-BLI Chanel 2-BLO Channel 3-ALI Channel 4-ALO

Channel 1 ± BLI Channel 2-BHI Channel 3-ALI Channel 4-AHI

Test Results in 850VA Pure Sine Wave Inverter Applications www.ti.com

Figure 14. Inputs to Gate Driver in Mains Mode With AC Mains Input of 220V

Figure 15. Signal Integrity from Input to Output Gate Drives in Low Side MOSFETs in 220V AC MainsMode.



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Figure 16. Signal Integrity from Input to Output Gate Drives in High Side MOSFETs in 220V AC MainsMode.



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SM72295: Highly Integrated Gate Driver for 800VA to 3KVA ... · PDF file1.3 Low Frequency 600VA to 3KVA Pure Sine Wave Inverter Design ... half-bridgeconverters or synchronous buck