Simulation of Single Event Effects and rate prediction ... · component degradation simulation tool A. Keating, S. Joyce, ... Which answers can GEANT4 Give? ... stand. statistical

component degradation simulation tool

A. Keating, S. Joyce, A. Zadeh, M. Pimenta,

E.Daly, P.Gonçalves

ESA Project:

18121/04/NL/CH

Simulation of Single Event Effects and rate

prediction. CODES an ESA tool

Heliosphere image courtesy of the Cosmic and Heliosphere Learning Centre

23/05/2013 2SPENVIS SUW

2013

Outline

• Simulation of SEE effects

– Environment thru shielding and processing layers

– Energy deposition distribution at SV

• Sensitive Volume Fit (SVFIT) Module

• CODES: the top level integrated tool

• Additional Models developed to be included later

• Conclusions


2013

Radiation Environment


2013

Single Event Effects

• A transient phenomenon : Decaying with time

• e-h pair generation threshold in the target material (3.6eV Si)


2013

SEE Mechanisms:

Stopping power and nuclear Reactions

• Keating et al. (2012). Modelling the effects of low-LET cosmic rays on electronic

components, Radiat Environ Biophys, DOI 10.1007/s00411-012-0412-2.

• Stopping power

• σ[X(a, b)y] nuclear cross section

• ηc(x) is the charge collection yield

• Z and A


2013

Drift & Diffusion in the semiconductor

• Electron-hole pairs are separated and transported by the electric field

(drift) and by diffusion

Ji= q ni µi Ε + q Di grad(ni);

drift diffusion i=e,h

• Drift: t~0.5ns d<10µm

• Diffusion: t>0.5ns d>10µm

• Part may recombine

(function of injection level, Ma 1989)

• Charges collected by electrodes may propagate

thru the circuit: Transient “ionocurrent”


2013

Drift & Funnelling

• Drift charge : prompt charge collection (~0.5ns)

• Before the ion the Electrical field, E, is limited to the depletion region

• The ion track (or the e-h pair plasma) extends E far down into bulk Si

C. M. Hsieh, P. C. Murley, 1981


2013

Device Response

• The device behaviour depends on the field (ξ), Incoming particle (βγ

∼P/M) and on the angle of incidence (θ)

• The critical charge depends on the node capacitance, voltage and the

response time of the device

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N2

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N1

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N2

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N1

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N1

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P1P1

0

N2

P2

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P2

1

P2

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0N3N3N3

restoreswitch nodenodecrit .I V . C Q τ+=

( ) critcollected Q, , f Q >= θλξ


2013

Which answers can GEANT4 Give?

• Particle physics simulation tool, for particle transport and

interaction with matter used for simulating:

– Shielding

– Packaging Layers

– Sensitive Volume


2013

What are the remaining questions?

• How does the energy/charge deposited is transported

in the device:

– Crystal Lattice?

– Electric fields?

– Time dependent effects?

• What is the electronic behaviour?

• How to get those answers?


2013

How ?

• Experimental data

– Device Response function

– Function of field effects

– Cristal lattice effects

– Experimental conditions

• SVFIT:

– Fits device sensitivity to adjust experimental device response

function


2013

SVFIT: Web interface

• SVFIT_V. 1.5.7

• Meta Information

• SV geometry

• Email account

• Efficiency matrix: No of SV

• Library

• Non Active layers

• Guideline SV dimensions

• Depth uncertainty ->

Interactive Fit

• Experimental Cocktail

• No. Events

• Credits

• Run SVFIT


2013

Detailed SVFIT: Published papers

• RADECS 2011

• 106 evts


2013

Engineering tool: ISSI1 SEU XS Reconstruction

<- 103 evts

106evts ->


2013

From Ion data to proton prediction

• Using SVFIT with the Ion test data

• The same SV geometries and Critical Energies

• Proton with energies used in experimental testing were simulated


2013

SVFIT working for different devices

• Tests have been made for the Reference SEU Monitor

and SEL monitor devices

y = 6.12E-05x + 1.18

y = 8.11E-05x + 1.35

y = 1.01E-04x + 1.51

0

2

4

6

8

10

12

14

1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07

No. Events per ion

Run Time [mm:ss]

3 ions cocktail

4 ions cocktail

5 ions cocktail

Linear (3 ions

0

10

20

30

40

50

60

70

80

1.E+02 1.E+03 1.E+04 1.E+05 1.E+06

No. Events per ionAccuracy [%]

3 ions Cocktail

5 ions Cocktail


2013

Top Level CODES


2013

Geometrical acceptance

Normalization

1.E-15

1.E-14

1.E-13

1.E-12

1.E-11

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06

Primary Fe Energy [MeV]

Flu

x

Integral Flux [/cm2/sr/s]

Differential Flux[/cm2/MeV/sr/s]

Primary Integral Flux Normalization

Theta Max

Total Flux Norm. = PrimFlxuNorm * GeomAccept * SolidAnglNorm

Angular normalization

According to the ICR

• Normalization is based on dMEREM/MARSREM normalization methods


2013

Full spectrum simulation

• CODES pre-processor takes inputs for several ions’

energy spectra in SPENVIS format and others

• Computes individual contributions for SEE rates

• Outputs the total rate prediction


2013

CODES Performance

• The framework is working properly under :– Windows Internet Explorer

– Google Chrome

– Firefox

y = 6.12E-05x + 1.18

y = 8.11E-05x + 1.35

y = 1.01E-04x + 1.51

00:00:00

00:28:48

00:57:36

01:26:24

01:55:12

02:24:00

02:52:48

03:21:36

03:50:24

04:19:12

04:48:00

1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07

No. Events per ion

Run Time [hh:mm:ss]

30 ion species environemnt

60 ion species environment

92 ion species environment

Linear (30 ion species

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0 10 20 30 40 50Charge Number [Z]

Accuracy [%]

1E3 Evts

1E4 Evts

1E5 Evts

x10

x 5

x 3

x 130

Additional models developed: that might be

implemented

With SVFIT


2013

Area increment above LET knee: Model & Results

• Results published at RADECS 2011

• Doi: 10.1109/RADECS.2011.6131414


2013

Efficiency matrix from Laser maps

• The model of defining acomplex efficiency matrix was developed for

SVFIT

• Objective : robust module for extraction from laser maps the charge

collection efficiency

• SVFIT and CODES : benefit from the inclusion under the user-friendly

interface

Images from of Isabel Lopez


2013

Conclusion

• CODES modules: top level user friendly tool, with a web-interface

• Tests show the robustness of the tool: consistency, accuracy & run time

• Results show :

– Very good reconstruction of device response function (3-5 ion cocktails):

excellent SVFIT

– Accuracy statistics independent (5 ion cocktails)

– Run time : SV shape fit : (3 to 5 ions) - 2 geometries : btw 2-10 min

statistics

– Run time : SV shape and depth fir: (5 ions) - 6 geometries : ~ 30 minutes

– mCODES higher independence from user definitions: stand. statistical

methods and sCODES


2013

– Distribution of the tool

– Inclusion of ready-to-use developed models

– Incrementation of the Device Library

– Further models investigated: TRL needs to be increased

Further Work

Thank you

Additional slides


2013


2013

Non-active Layers


2013

Non-active Layers


2013

User defined NAL

Pre-processor:

� Verification of the total weight percentage in the material is = 1

� Send error messages

� Compute total density

� Compute layer positions in relation to device structure

� Write NALFile.txt with NAL table

� All have been verified


2013

SV Volume definition


2013

Radiation Input File


2013

Device Response Function

ID Plateaux With Exp Thres.

n 3.53E-14 4 1 10

p 3.53E-14 4 1 10

hi 1.50E-07 65 1.4

7

1.2

SEU = No. Event * NormF


2013

SEU calculation with mCODES

SEU Rate = No Evts (Edep > Ec)/NGen * Total Flux * Active Area


2013

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1E-06 0.0001 0.01 1 100

LET @ SV [MeV.cm2/mg]

To

tal F

lux

[/c

m2

/s]

Differencial

Cumulative

SEU calculation with sCODES

SEU Rate = No Evts (LET> Th)/NGen * Total Flux * <SEU_XS>

2


2013

SVFIT automatic/iterative

• Modular iterative tool

• Microdosimetry Monte-Carlo technique

• Device sensitive volume: charge deposited contributes entirely to prompt charge

collection.

• Input parameters:

– Ion cocktails description

– Irradiation test data

• SEU threshold definition

• SV shape modulation

• Output:

– best SV shape to fit ion test data

– Threshold Energy loss for SEE

– Reconstructed SEE XS curve

N

Ne

Si

Ar

Kr

Documents

Simulation of Single Event Effects and rate prediction ... · component degradation simulation tool A. Keating, S. Joyce, ... Which answers can GEANT4 Give? ... stand. statistical