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External Use TM Simulation of Packaged Component Electrical Performance FTF-SDS-F0024 APR.2014 Neil Tracht | Package Design Manager

Simulation of Packaged Component Electrical Performancecache.freescale.com/files/training/doc/ftf/2014/FTF-SDS... · 2016-03-12 · Simulation of Packaged Component Electrical Performance

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External Use

TM

Simulation of Packaged

Component Electrical

Performance

FTF-SDS-F0024

A P R . 2 0 1 4

Neil Tracht | Package Design Manager

TM

External Use 1

Session Introduction

• Electrical Simulation of Package and Assembly

− The integrated circuit package is a crucial element in overall system

performance.

− Power and signal integrity within the package are essential for robust

system performance

− Freescale conducts extensive electrical simulation of the package and

assembly design to assure the performance of Freescale products

− This presentation will provide an overview of aspects of this modeling

and simulation for automotive and microcontroller packages

• Presentation by Neil Tracht – Manager, Wirebond Package Design

& Electrical Simulation

TM

External Use 2

Session Objectives

• After completing this session you will be able to:

− Describe methods for package parasitic extraction

− Name the types of electrical analysis preformed on IC packages

− Describe how the electrical performance of the IC package impacts

system performance

− Describe how package parasitics are incorporated into

Input Output Buffer Information Specification (IBIS) Models

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External Use 3

Agenda

• Package analysis tools

• Power and signal integrity

− PI/SI background

− Power supply noise example

− Signal integrity example

• Package design considerations

− Substrate

− Leadframe

− Wire diameter and wire material

− Current capacity

• Input Output Buffer Information Specification (IBIS) models

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External Use 4

Package Analysis Tools

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External Use 5

Package Electrical Analysis Tools

• Freescale uses a variety of 3D solvers to

extract and model integrated circuit

packages

• Full Package Analysis

− Sigrity Power SI

− Nimbic nWave

• Partial Package Analysis

− Ansys HFSS and Q3D

− Computer Simulation Technology (CST)

Microwave Studio

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External Use 6

Types of Packages

• Leadframe

− QFP

− QFN

• Substrate

− BGA

− LGA

− 2-Layer and 4-Layer

− SiP

• Redistributed Chip Package (RCP)

− BGA

− LGA

− SiP

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External Use 7

Understanding Package

Parasitics

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External Use 8

Package Parasitics

• Resistance (R)

− Resistance in package conductors will create a voltage drop

V=IR

− The DC resistance of a rectangular conductor is given by

• r is the bulk resistivity of the conductor

• w is the width

• t is the thickness

• len is the length

• AC Resistance

− Governed by “Skin Effect”

− Skin Effect causes the current to crowd to the conductor surface

− Depth is a function of square root of frequency

tw

lenRDC

rt

w

I V

len

R

Ground Plane

Line

AC Current

Microstrip:

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External Use 9

Package Parasitics

• Capacitance

− Capacitance exists between any 2 conductors

− The “self” capacitance - defined as the

capacitance between a lead and a chosen

reference conductor with no other conductors

present

− The “mutual” capacitance between 2 leads - the

capacitance between the 2 leads with no other

conductors present

Physical Structure

V1 V2 V3 Mutual

Self

Capacitance Model

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External Use 10

Package Parasitics

• Inductance

− Inductance will cause a voltage drop

− Self Inductance is the inductance of an individual loop

− Nearby loops have a mutual inductance

− Voltage over a loop depends on current in all loops

dt

dILV

V1

V2

V3

V4

I1

I2

I3

I4 414313212111 ILILILILdt

dV

Self

Inductance

Mutual

Inductance

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External Use 11

Package Design Considerations

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External Use 12

Design Considerations

• Substrate Package Design Considerations

− Identify the critical signal nets and critical electrical specifications

− Ball Map Plan package ball locations for critical electrical specifications

− Supply network

Minimize the power and ground network inductance and resistance

− Critical signals

Minimize the inductance and resistance for the critical signal nets

Differential pairs

• Differential pairs should be optimized for routing

• Balance/ de-skew the differential pairs, data lanes

Signals requiring isolation

• Avoid switching nets adjacent to data lanes

• Shield the critical signal nets with ground net

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External Use 13

Design Considerations

• Substrate Package Design Considerations

− Route VSS as a shield for the critical signal nets

Critical net VSS net

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External Use 14

Design Considerations

• Substrate Package Design Considerations

− DDR nets/differential nets balanced for electrical performance

G10 DDR_DM0

K13 DDR_DM1

G12 DDR_DQ0

H12 DDR_DQ1

K12 DDR_DQ2

L12 DDR_DQ3

H11 DDR_DQ4

F11 DDR_DQ5

J11 DDR_DQ6

K11 DDR_DQ7

C17 DDR_DQ8

C16 DDR_DQ9

F14 DDR_DQ10

G14 DDR_DQ11

L13 DDR_DQ12

J13 DDR_DQ13

G13 DDR_DQ14

H13 DDR_DQ15

L11 DDR_DQS0

D15 DDR_DQS1

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External Use 15

Design Considerations

• Substrate Package Design Considerations

− Continuous grounding is critical for high

speed nets

− Typical 4-Layer Package

• Metal 1 – Signal Routing

• Metal 2 – Ground

• Metal 3 – Supplies

• Metal 4 – BGA Pads and minimal routing

− Critical nets should not route across breaks

in the ground layer

Signal

Continuous Ground

Critical Signal Routing

Signal

Broken Ground

Non-Critical Nets Only

Broken Ground

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External Use 16

Optimizing Power Integrity

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External Use 17

Power Integrity

• VDD_LV - Time-Domain

Voltage Waveform

− Core noise is 78.52mV

− Core noise is 6.54%

− Above the +/-6% noise spec

Noise in mV and %

Net Noise, mV (overshoot/undershoot) Noise % (overshoot/undershoot)

VDD_LV 42.51/-78.52

3.54/-6.54

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External Use 18

Power Integrity

• VDD_LV - Time-Domain Voltage

Waveform

− Possible Solutions

Reduced Power Step

• Core noise is 70.52mV

• Core noise is 5.88%

On die bypass capacitance

• Core noise is 70.86mV

• Core noise is 5.90%

Solutions with the +/-6% noise spec

15% power step

On die cap 27nF

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External Use 19

Wire Diameter

• Bond wire diameter is set by two limiting factors

− Current capacity of the bond wire

Limited by self-heating of the wire – a function of wire length and current

− Voltage drop of package supply network

Limited by supply noise margins

• Comparison of 18 um and 23 um diameter wire

− Current Capacity

Highest current die pad with longest bond wire identified

• Required current - 38.04mA VDD supply

• Current capacity of 23 um wire – 249.8mA

• Current capacity of 18 um wire – 151.1mA

Smaller diameter wire will meet current capacity requirements

TM

External Use 20

Wire Diameter

• Comparison of 18 um and 23 um

diameter wire

− Voltage supply margin

Smaller diameter wire reduces supply

margin by ~3.4mV

Supply budget is ±6% or ±90mV leaving

~34.5mV of margin

Smaller diameter wire meets supply

margin requirements

23μm

18μm

Wire

Diameter

Overshoot/

Undershoot mV

Overshoot/

Undershoot

percent

23μm 0.11/-52.11 0.01/-3.47

18μm -3.94/-55.47 -0.26/-3.70

TM

External Use 21

Leadframe Design

• QFP Power Bar Design

− Options to connect power bar

Fixed lead versus jumper wires

Jumper wires allow flexibility for assigning

power pins

Jumper wires can be used without exceeding

static IR drop

Supply Name

VDD_O DC

Resistance Static IR

Drop Static IR

Drop Spec

mOhms mV mV

Fixed Lead 15.30 2 10

Jumper Wire 30.72 4 10

Fixed Lead

Jumper Wire

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External Use 22

Maintaining Signal Integrity

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External Use 23

Signal Integrity

• Electrical simulation can be used to optimize via placement for

improved isolation at 77GHz

− Two alternated designs evaluated

Version 1 Version 2

Added Vias Alternate

Via Space

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External Use 24

Signal Integrity

• Containment of electromagnetic fields

− Version 2 shows improved containment of electromagnetic fields

Version 1

Greatly improved Isolation

Version 2

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External Use 25

Signal Integrity

• Containment of electromagnetic fields

− Version 2 shows improved containment of electromagnetic fields

Version 1

Greatly improved Isolation

Version 2

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External Use 26

IBIS Models

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External Use 27

IBIS Models

• Input Output Buffer Information

Specification (IBIS)

− Method of providing the Input/Output device characteristics through V/I data

− Tabular description of the IO buffer characteristics

− Freescale provides IBIS models by combining Pad Driver Models with Package RLC’s into a single IBIS.

− Package RLC’s are extracted from the completed package design using the same extraction techniques used for Power and Signal integrity inside the package.

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External Use 28

Session Summary

• The integrated circuit package is a vital portion of overall system

performance

• A well designed package will

− Maintain power integrity

− Insure signal integrity

• IBIS models including package parasitics enable board and system

level simulation

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External Use 29

For Further Information

• IBIS Open Forum http://www.eda.org/ibis/

• Validating and Using IBIS files

http://www.national.com/appinfo/lvds/files/wp_ibis_validate.pdf

• Signal Integrity http://bethesignal.com

• My Contact information

− Neil Tracht – Manager of Package Design and Electrical Modeling

[email protected]

TM

External Use 30

Closing

• By now, you should be able to:

− Describe package parasitics

− Describe analysis techniques used to insure robust package

performance

− Describe package design considerations used to optimize package

performance