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    MT-II

    EEE CYCLE

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    TRANSDUCERS 2L

    SIGNAL CONDITIONING 2L

    DISPLAY DEVICES - 2L

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    Radiant Electrical Mechanical Thermal Chemical Magnetic

    Radiant Filter Photodiode

    Electrical LED transistor ReversePiezo-Electricity

    peltier Electro -plating

    coil

    Mechanical DirectPiezo-Electricity,Piezo-resistance

    Gear box

    Thermal seebeck Heatexchanger

    Chemical pH Chemicalreaction

    Magnetic Hall effect Magnetic

    ckt

    Devices used to convert one form of energy toanother.

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    Instrument Transducers are devices which

    for the purpose of measurement convert

    physical input quantities into an electrical

    output signal.

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    Why Conversion to Electrical Signal? ?

    Easy to modify

    Easy to process

    Easy to Transmit

    Easy to Display

    No mass-inertia effects

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    Transducer Classification:

    Energy Converter

    (Called Self Generating or Active)

    Thermocouple, Solar Cell

    Energy Controller

    (Called Passive or Modulating)

    LDR, RTD

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    Transduction principle

    Resistive, Capacitive, Inductive Primary Input quantity

    Flow, temperature, motion, pressure

    Material and technology

    SMT (Silicon Micro technology), MEMS, Fiber

    Optic

    Application: Environmental, Biomedical

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    Factors influencing choice of transducers

    Size

    Weight

    Shape

    Sensitivity to desired, modifying and

    interfering inputs

    Accuracy

    Operating range

    Transient and Frequency response

    Static characteristics

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    Ruggedness (shock surround)

    Reliability (MTBF, MTTR)

    Availability and Delivery

    Stability ( characteristics not changing with

    time)

    Environmental compatibility

    Cost

    Electrical aspects ( Impedance, length and

    type of cable)

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    Major types of Resistive transducers Potentiometers

    Strain Gauges

    Resistance temperature detector (RTD)

    Thermistors

    Light Dependent Resistor (LDR)

    RESISTIVE TRANSDUCERS

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    Preset(open style)

    Presets(closed style)

    Multiturnpreset

    Variable pot

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    RESISTIVITE POTENTIOMETERS

    A resistance element provided with a movablecontact.

    The contact motion can be

    translation

    rotation

    combination of the two such as helical

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    Loading Effect Of Potent iom eters

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    K1mK1K

    R||RRR

    R||R

    e

    e

    xmxp

    xm

    ex

    0

    m

    p

    t

    i

    p

    x

    R

    Rm&x

    x

    R

    R

    K=

    Rm= detector is of infinite impedance i.e. m = 0

    Ke

    e

    ex

    0

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    Error = output voltage at loaded condition -

    output voltage under no load

    K1mK1K.eex

    m

    1K1K

    K1Ke2

    ex

    At K = 0 and K = 1, error = 0. At all other points

    error is (ve)

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    For good linearity, for a meter of a given

    resistance Rm, choose a potentiometer ofsufficiently low resistance relative to Rm

    Max eex = pPR

    Low value of Rp

    allows only a small eex

    and therefore a small sensitivity

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    A variable pot has a total resistance of 2.2 K ohm and

    is fed from 10 V DC supply. The output is connected

    to a load resistance of 5.1 K ohm. Tabulate errors for

    wiper positions from 0.1 to 1.0 in increments of 0.1.

    pm

    ex

    R

    R

    KK

    KKE

    1

    1Error

    2

    K 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

    Error 0 -0.0037 -0.0013 -0.025 -0.037 -0.048 -0.0573 -0.058 -0.052 -0.036 0

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    Problem : we have two resistors of 10 ohm and

    330 both having power rating of 0.25W. Can we

    connect both resistors to 6V battery?

    Solution :

    power dissipated by 330 ohm resistor is

    W

    R

    V109.0

    330

    662

    power dissipated by 10 ohm resistors is

    WR

    V6.3

    10

    662

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    10 ohm resistor will burn, since power

    dissipated by it exceeds its rated

    capacity.

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    Inductive transducers are those in which

    SELF INDUCTANCE of a coil or the

    MUTUAL INDUCTANCE of a pair of coil

    is altered due to variation in the

    measurand.

    Change in inductance L is measured.

    INDUCTIVE TRANSDUCERS

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    The self inductance of a coil refers to

    the flux linkage within the coil due to

    current in the same coil.

    Mutual inductance refers to the flux

    linkages in a coil due to current in

    adjacent coil.

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    Fig2.3e

    SELF INDUCTANCE TRANSDUCER

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    MUTUAL INDUCTANCE TRANSDUCER

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    In the magnetic circuits, reluctance is equivalent

    to resistance and depends on :

    Number of turns

    Area of cross section of wire

    Permeability of the medium

    Air has much lower permeability than a

    ferromagnetic material.

    Introducing air gap is like introducing high

    resistance.

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    Air Cored Coils

    Can be operated at higher frequencies because

    there are no eddy current losses in air core.

    Iron cored coils

    Inductance depends on the value of current.

    At high frequencies eddy current losses arehigh.

    Size much smaller than air cored.

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    VARIABLE RELUCTANCE TRANSDUCERS

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    PROBLEM:

    A variable reluctance type tachometer has 60 rotor

    teeth. The counter records 3600 counts per second.

    Determine the speed in rpm.

    Soln:

    Speed (rps) = pulses per second / number of teeth

    rpmrps 360060

    3600

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    A disk has 20 holes, the light detector is

    connected to frequency meter for shaft

    speed measurement. If the frequency

    meter reading is 720 Hz. Calculate theshaft speed.

    What is the minimum speed that can be

    detected?

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    20 holes => 20 pulses /rev

    720 Hz => 720 pulses/sec

    Speed (rps) = pulses per second / number of holes

    = 720 / 20 = 36 rps = 2160 rpm

    Minimum speed corresponds to 1 Hz

    1 Hz corresponds to 2160 / 720 = 3 rpm

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    Linear Variable Differential Transformer

    (LVDT)

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    There is one primary winding connected to

    an ac source (50 Hz 20 kHz), excitation

    3 15 Vrms.

    Core is made of high permeability softiron or nickel iron. Two secondary

    windings are connected in series

    opposition

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    G t i t f il t i ll d

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    Geometric centre of coil arrangement is called

    the NULL position. The output voltage at the null

    position is ideally zero.

    However it is small but nonzero (null voltage).

    Why?

    1. Harmonics in the excitation voltage and stray

    capacitance coupling between the primary

    and the secondary

    2. Manufacturing defects.

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    A typical signal conditioning provides

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    A typical signal conditioning provides

    1. Power supply

    2. Frequency generator to drive LVDT

    3. Phase sensitive Demodulator and

    Low Pass Filter to convert ac to dc

    4. DC amplifier to amplify the final

    output signal

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    Ad t

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    Advantages

    Wide range of displacement from m to cm.

    Frictionless and electrical isolation.

    High output.

    High sensitivity [sensitivity is expressed in mV

    (output voltage)/ mm (input core displacement)].

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    Disadvantages

    Sensitive to stray magnetic fields.

    Affected by vibrations.

    Dynamic response is limited mechanically by

    the mass of core and electrically by frequency

    of excitation voltage.

    CAPACITIVE TRANSDUCERS

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    A capacitor is an electrical component which

    essentially consists of two plates separated

    by an insulator.

    The property of a capacitor to store anelectric charge when its plates are at different

    potential is referred to as capacitance.

    CAPACITIVE TRANSDUCERS

    Q

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    V

    Q

    d

    AC r0

    Capacitance C =

    .

    If the capacitance is large, more charge is

    needed to establish a given voltage difference.

    The capacitance between two parallel metallic

    plates of area

    m

    F120 1085.8

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    A capacitor is made of N parallel plates each of

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    A capacitor is made of N parallel plates each of

    area A and spaced a distance d apart. A second

    set of N identical plates is positioned midway

    between the first set, as shown below. What is

    the total capacitance of the whole system?

    To see what's happening, let's take N = 2:

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    pp g,

    h th 2 l t i h t th b

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    when there are 2 plates in each set, the number

    of capacitors, i.e., sheets of positive and

    negative charges separated by a distance d/2, is

    3, i.e., (2N - 1). Therefore, if there are N plates

    in each set, there are (2N - 1) capacitors in

    parallel, so the total capacitance is:

    (2N - 1) [oA/(d/2)] = 2(2N - 1) [oA/d]

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    PLATE DISTANCE CHANGE

    PLATE AREA CHANGE

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    d)xL(wC r0

    PLATE AREA CHANGE

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    For area variation, the capacitance is maximum

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    when the overlap area is maximum and is givenby

    dAC maxr0max

    2

    rA

    2

    max

    (if plates are semi-circular in shape)

    .CC max

    d2

    rC

    2

    r0

    SENSITIVITY= K

    d2

    rC 2r0

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    DIELECTRIC CHANGE

    Capacitive Sensors

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    Capacitive Sensors

    Other Configurations

    c. Differential Mode

    b. Variable Dielectric Mode

    a. Variable Area Mode

    LINEARIZATION TECHNIQUES

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    Displacement-capacitance relationship is

    non linear

    Nonlinearity corrupt the performance of a

    simple parallel plate sensor

    LINEARIZATION TECHNIQUES

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    Different ial Capacito r

    2ECE 1EC

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    21

    21

    CCE

    21

    12

    CC

    ECE

    For x=0,21 CC

    2

    EEE 21

    E

    d2

    xdE1

    E

    d2

    xdE2

    xd

    AC

    xd

    AC

    upmovesX

    21

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    12 EEE

    E

    d

    xE

    S = Sensitivity Gd

    E

    X

    E

    PIEZOELECTRIC

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    ANDHALL EFFECT TRANSDUCERS

    WHO DISCOVERED PIEZOELECTRICITY?

    The first experimental demonstrationof piezoelectric was published in

    1880 by brothers Pierre and JacquesCurie when they were 21 & 24 yearsold.

    Piezoelectricity

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    Piezoelectricity

    Phenomenon of generating an electric

    charge in a material when subjecting it to a

    mechanical stress (direct effect).

    and

    Generating a mechanical strain inresponse to an applied electric field

    (converse effect)

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    Pi l t i t i l A i t i

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    Piezoelectric materials are Anisot rop ic

    Electrical and mechanical properties differalong different directions

    TYPES OF PIEZOELECTRIC

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    MATERIALS

    Natural: Tourmaline; Quartz; Topaz;Rochelle salt (sodium potassium

    tartrate tetrahydrate).

    Synthetic: Barium Titanate (BaTiO3);Lead Zirconate (PbZio3); PolymerFilms (Polyvinylidene fluoride (PVDF), (-CH2-

    CF2-)n).

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    There are two families of constants: g constantsand d constants. In the constants the firstsubscript refers to the direction of electrical effectand the second to that of the mechanical effect

    according to the axis systems.

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    i

    33

    f

    Q

    3directioninappliedforce

    3directioningeneratedeargchd

    )wl/(f

    t/e

    3directioninappliedstress

    3directioninproducedfield

    gi

    0

    33

    g = 12 * 10-3 (V/m) / (N/m2) for barium Titanate

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    g 0 ( / ) / ( / ) o ba u ta ate

    g= 50 * 10-3 (V/m) / (N/m2) for quartz.

    A quartz crystal 0.1 inch thick would have a

    sensitivity of 0.88 V/psi

    psi

    m

    NPa 4

    21045.111

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    33

    ii

    0

    i

    0

    33

    d

    f

    Q

    f

    C.e

    /f

    t/e

    stress

    fieldg

    d33 = 33g.

    ptge

    p.t

    e

    f.t

    A.e

    /f

    t/eg

    330

    0

    i

    0

    i

    033

    Piezoelectric Transducers are used for

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    Piezoelectric Transducers are used for

    measurement and recording of dynamic

    changes in mechanical variables such as

    pressure, force and acceleration.

    Gas LightersGeneration of sonar wavesQuartz clocksLoudspeaker

    LOW FREQUENCY DEVICES

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    (Force, Position, Acceleration, Spark generator)

    AUDIO DEVICES

    (Microphone Heads, Stereophonic pickups, Loud

    Speaker)

    RF DEVICES

    (Ultrasonic generators/receiver/Scanner)

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    HALL EFFECT SENSORS

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    WHO

    INVENTED

    HALL EFEFCT ?

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    Edwin Herbert Hall discovered the "HallEffect" in 1879 while working on his

    doctoral thesis in physics in university ofJohn Hopkins in Baltimore

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    Commercially available Hall generators

    made of

    Bulk Indium Arsenide (InAs)

    Thin Film InAs

    Gallium Arsenide (GaAs)

    Indium Antimonide (InSb).

    VH = KHOC ICB sin I B

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    kGmA

    mVisKofunit HOC

    Ic x B

    IC is the control current in mA ( ac or dc),

    B is the magnitude of flux density inkilogauss (kG) [1 Tesla = 10,000 Gauss)

    is the angle in degrees of the incidentmagnetic field from a line drawn parallel

    to the Hall plate.

    silicon Hall effect transducers can be

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    silicon Hall effect transducers can befabricated on standard bipolar and

    CMOS integrated circuit processes.

    Sensitivities of semiconductor Halltransducers are still very low, fallingin the 10mV to 100mV/Gauss,

    additional signal conditioning isusually required for any practicalapplication.

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    Preamplifier and a threshold detector areintegral to Hall effect sensor ICs.

    Significant amounts of signal processingcircuitry can be incorporated on the

    same die as the transducer.

    Typical Hall IC has three pins. Supply,

    Ground and Output.

    Hall ICs cost from $ 0.2 to $ 1.5.

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    PHOTOELECTRIC

    TRANSDUCERS

    The basic principle behind the working of

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    The basic principle behind the working of

    the Photoelectric Transducers is the

    Photoelectric effect.

    The photoelectric effect was explained

    mathematically by Albert Einstein

    Einstein won the Noble award for the

    discovery of photoelectric effect in 1921.

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    For a given surface, there is a

    minimum frequency of radiation atwhich emissions occur

    Incident radiation with a lowerfrequency( Energy) than the

    threshold, does not cause electronsto be emitted, regardless of intensity.

    http://encyclopedia.thefreedictionary.com/frequencyhttp://encyclopedia.thefreedictionary.com/frequency
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    What is

    Emission Spectrum?

    Spectral Response?

    A graph of energy output of source

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    g p gy p

    plotted versus frequency or wavelength

    is Emiss ion Spectrum of source.Source Characteristics

    Graph of device current, voltage or

    resistance versus radiation frequency

    is Spectral Response.

    Dev ice Characterist ics

    EMISSION SPECTRUM

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    EMISSION SPECTRUM

    SPECTRAL RESPONSE

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    Photo emissive cell

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    The photoelectric current produced

    I = S

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    Cathode is photo emissive light release

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    Cathode is photo emissive, light release

    electrons ,which are attracted towards anodeproducing a electric current .

    The cathode and anode are enclosed in glass

    or quartz envelope which is either evacuated

    or filled with a inert gas.

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    Photoelectric tube response to different

    wavelength of light is influence by

    Transmission characteristics ofglass tube envelope

    The photo emissive characteristics ofthe cathode material

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    .

    If the p-n junction is operated in the thirdquadrant, the product of a negative current

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    quadrant, the product of a negative currentand a positive voltage will yield a negative

    power.

    Negative power corresponds to a source

    of power.

    A p-n junction operated in the third

    quadrant can be used as a source ofpower : the principle behind the solar cell.

    Photodiodes

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    Photodiode (pn junction) operated in reverse bias

    In a reverse biased p-n junction a Reverse

    Saturation Current flows due to minority carriers

    which are thermally generated.Increasing the reverse bias does not increases the

    reverse current significantly. Increasing what

    parameter will increase reverse current?

    TEMPERATURE and ILLUMINATION increases

    number of minority carriers (reverse) current.

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    Small current converted to appreciable voltageBy passing through resistor (I V converter)

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    Es = VR1 -VD

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    To cause a change in resistance photonsincident on these materials must have energy,

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    gy,

    Eg is the band gap in electron volts (eV), h isPlancks constant (4.14 x 10-15 eV.s), is the

    frequency of the light.

    gEhv

    In the dark, the resistance is very high-mega ohm

    range.When illuminated, the resistance may drop to a

    few hundred ohms.

    Bulk resistivity decreases with increasingillumination, allowing more photocurrent to flow.

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    , g p

    Bulk effect photoconductors are referred asphotoconductive cells or simply photocells.

    Photocells are thin film devices made by

    depositing a layer of a photoconductive materialon ceramic substrate

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    Cannot be practically used for high

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    Cannot be practically used for highspeed switching. WHY ?

    Exhibit "memory effect

    Require on the order of a secondfor the resistance to rise to its dark

    resistance.

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    Count no. of people going/coming in aroom

    Count no. of objects moving on a

    conveyer belt Find the complexion of your face

    Automatic Headlight Dimmer

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    Night Light Control

    Street Light Control

    Absence / Presence (beam breaker)

    Position Sensor

    Can handle many watts, so a relay can

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    be directly operated using an LDR.

    LDRs are used as switching devices todetect presence or absence of light.

    Counters, twilight switches, camera

    control systems

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    Photovoltaic Cells

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    A device that turns light into electricenergy.

    Where were they developed ??

    For What application ??

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    The photovoltaic cells were developed atBell Labs in 1950

    primarily for space applications

    The Hubbell telescope utilizes solar

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    panels for its energy requirements.

    Space satellites

    Rural health clinics for Lighting,Refrigeration,

    Water pumps for irrigation

    Small scale power generation.

    thin layer of crystalline

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    semiconductor (Se, Si, Cu2O, )

    sandwiched between two differentmetal electrodes

    No Bias but irradiation causesformation of electron hole-pair

    formation

    Photovoltaic cells generate a voltagewhich is proportional to EM radiation

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    which is proportional to EM radiation

    intensity.

    Called photovoltaic cells because of

    their voltage generatingcharacteristics.

    Active transducers i.e., they do notneed an external source to power

    them

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    The power from a cell is afunction of cell area andpower density of light.

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    Short-circuit current (I )

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    Short-circuit current (ISC)current produced when the positive and negative

    terminals of the cell are short-circuited,voltage between the terminals is zero(load resistance of zero)

    Open-circuit voltage (VOC)

    voltage across the positive and negative terminalsunder open-circuit conditions,current is zero (an infinite load)

    Fill factormeasures the "squareness" ofthe I-V curve

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    It describes the degree to which the voltageat the maximum power point (Vmax) matchesVoc

    andthe current at the maximum power point(Imax) matches Isc

    ocscVI

    VI

    FF maxmax

    Consider a solar cell driving a load of 3.Thi ll h f 3 3 d i

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    This cell has an area of 3cm 3cm and is

    illuminated with light of intensity 700 W/m2

    .Voltage and current for maximum power pointwith load of 3 ohm are 0.475 V and 157 mArespectively.

    Find (i) Power delivered to the load,

    (ii) Efficiency of the solar cell in this circuit,

    (iii) Fill factor of the solar cell. Given :

    Isc = 178 mA Voc = 0 58 V

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    The power delivered to the load : Pout = I*V = (15710

    -3)(0.475 V)

    = 0.0746 W or 74.6 mW

    The input power of sunlight :

    Pin

    = (Light intensity) (Surface area)

    = (700 W /m2) (0.03m)2 = 0.63 W

    07460 WP

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    %8.11

    63.0

    0746.0100100(%)

    W

    Wxx

    P

    PEfficiency

    in

    out

    %72722.0

    )58.0)(178(

    )475.0)(157(maxmax

    or

    VmA

    VmA

    VI

    VIFF

    ocsc

    1.7x1023 kW Sun Emits8.5 x1013 kW reaches the earth

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    6x1013 kW penetrates earths atmosphere.

    With sun directly overhead on a clear day,

    power density of sunlight is

    100 mW/cm2

    1 SUN = 1kW/m2 =100 mW / cm2

    On a cloudy day, power density of

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    sunlight might be 0.3 SUN or 30

    mW/cm2.

    Energy Density (Langley )product of power density and time.

    1 Langley = 11 62 W hr/m2