SFH 4855

1 Version 1.4 | 2020-02-04

Produktdatenblatt | Version 1.1 www.osram-os.com

Applications

SFH 4855

Metal Can® TO18 Infrared Emitter (850 nm)

— Industrial Automation (Machine Controls, Light Barriers, Vision Controls)

Features: — Package: hermetically sealed

— ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

— Wavelength 850nm — Short switching times — Spectral match with silicon photodetectors

Ordering Information

Type Radiant intensity 1)2) Radiant intensity 1) Ordering Codetyp.

IF = 100 mA; tp = 20 ms IF = 100 mA; tp = 20 msIe Ie

SFH 4855 45 ... 280 mW/sr 110 mW/sr Q65111A6128

SFH 4855-VAW 71 ... 180 mW/sr 110 mW/sr Q65111A9675

SFH 4855

2 Version 1.4 | 2020-02-04

Maximum RatingsTA = 25 °C

Parameter Symbol Values

Operating temperature Top min. max.

-40 °C125 °C

Storage temperature Tstg min. max.

-40 °C125 °C

Forward current IF max. 100 mA

Surge current tp ≤ 200 µs; D = 0 

IFSM max. 1 A

Reverse voltage 3) VR max. 12 V

Power consumption Ptot max. 200 mW

ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

VESD max. 2 kV

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CharacteristicsIF = 100 mA; tp = 20 ms; TA = 25 °C

Parameter Symbol Values

Peak wavelength λpeak typ. 860 nm

Centroid wavelength λcentroid typ. 850 nm

Spectral bandwidth at 50% Irel,max (FWHM) ∆λ typ. 30 nm

Half angle φ typ. 8 °

Dimensions of active chip area L x W typ. 0.3 x 0.3 mm x mm

Distance chip surface to lens top H min. max.

4 mm4.8 mm

Rise time (10% / 90%) IF = 100 mA; RL = 50 Ω

tr typ. 12 ns

Fall time (10% / 90%) IF = 100 mA; RL = 50 Ω

tf typ. 12 ns

Forward voltage 4) VF typ. max.

1.7 V1.9 V

Forward voltage 4) IF = 1 A; tp = 100 µs

VF typ. max.

3.6 V4.5 V

Reverse current 3) VR = 5 V

IR max. 10 µA

Radiant intensity 1) IF = 1 A; tp = 100 µs

Ie typ. 515 mW/sr

Total radiant flux 5) Φe typ. 35 mW

Temperature coefficient of voltage TCV typ. -0.6 mV / K

Temperature coefficient of brightness TCI typ. -0.3 % / K

Temperature coefficient of wavelength TCλ typ. 0.3 nm / K

Thermal resistance junction case real RthJC max. 350 K / W

Thermal resistance junction ambient real RthJA max. 500 K / W

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4 Version 1.4 | 2020-02-04

Brightness Groups TA = 25 °C

Group Radiant intensity 1)2) Radiant intensity 1)2)

IF = 100 mA; tp = 20 ms IF = 100 mA; tp = 20 msmin. max.Ie Ie

U 45 mW/sr 71 mW/sr

V 71 mW/sr 112 mW/sr

AW 112 mW/sr 180 mW/sr

BW 180 mW/sr 280 mW/sr Only one group in one packing unit (variation lower 2:1).

Relative Spectral Emission 6), 7)

Ie,rel = f (λ); IF = 100 mA; tp = 20 ms

7000

nm

%

OHF04132

20

40

60

80

100

950750 800 850

Irel

λ

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Radiation Characteristics 6), 7)

Ie,rel = f (φ)

OHF05678

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0100˚

90˚

80˚

70˚

60˚

50˚

0˚10˚20˚30˚40˚

0

0.2

0.4

0.6

0.8

1.0ϕ

Forward current 6), 7)

IF = f (VF); single pulse; tp = 100 µsOHF05645

FI

V

mA

0

FV

5

5

210

310

101

100

1 2 3 4

Relative Radiant Intensity 6), 7)

Ie/Ie(100mA) = f (IF); single pulse; tp = 100 µsOHF05641

310

Ιe

(100 mA)e

Ι

FI102110100 mA

10-3

10-2

10-1

100

110

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Max. Permissible Forward CurrentIF,max = f (TA); Rthja = 500K / W; single pulse

00

˚CTA

FImA

OHF05680

10

20

30

40

50

60

70

80

90

110

25 50 75 100 125

Permissible Pulse Handling CapabilityIF = f (tp); duty cycle D = parameter; TA = 25°C

tp

0

TtA

IF D = IP

T

F

PtOHF05681

-510 -3-410 10 -1-210 10 1010 10 s 210

0.51

0.20.1

0.01

0.050.02

=0.005D

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.1

Permissible Pulse Handling CapabilityIF = f (tp); duty cycle D = parameter; TA = 85°C

tp

0

TtA

IF D = IP

T

F

PtOHF05682

-510 -3-410 10 -1-210 10 1010 10 s 210

0.51

0.20.1

0.01

0.050.02

=0.005D

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.1

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Dimensional Drawing 8)

Further Information:

Approximate Weight: 380.0 mg

Package marking: Cathode

Pin Description

1 Cathode

2 Anode

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Recommended Solder Pad 8)

Pad 1: cathode

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9 Version 1.4 | 2020-02-04

TTW SolderingIEC-61760-1 TTW

00

s

OHA04645

50

100

150

200

250

300

t

T

˚C

235 ˚C - 260 ˚CFirst wave

20 40 60 80 100 120 140 160 180 200 220 240

Second wave

10 s max., max. contact time 5 s per wave

Preheating

T∆

100 ˚C120 ˚C130 ˚C

Typical

Cooling

ca. 3.5 K/s typical

ca. 2 K/s

ca. 5 K/s

Continuous line: typical processDotted line: process limits

< 150 K

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10 Version 1.4 | 2020-02-04

Disclaimer

Attention please!The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances.For information on the types in question please contact our Sales Organization.If printed or downloaded, please find the latest version on the OSRAM OS website.

PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.

Product and functional safety devices/applications or medical devices/applicationsOSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices.OSRAM OS products are not qualified at module and system level for such application.

In case buyer – or customer supplied by buyer – considers using OSRAM OS components in product safety devices/applications or medical devices/applications, buyer and/or customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and buyer and /or customer will analyze and coordi-nate the customer-specific request between OSRAM OS and buyer and/or customer.

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11 Version 1.4 | 2020-02-04

Glossary1) Radiant intensity: Measured at a solid angle of Ω = 0.01 sr2) Brightness: The brightness values are measured with a tolerance of ±11%.3) Reverse Operation: Reverse Operation of 10 hours is permissible in total. Continuous reverse opera-

tion is not allowed.4) Forward Voltage: The forward voltages are measured with a tolerance of ±0.1 V.5) Total radiant flux: Measured with integrating sphere.6) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic-

es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif-fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.

7) Testing temperature: TA = 25°C (unless otherwise specified)8) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and 

dimensions are specified in mm.

SFH 4855

12 Version 1.4 | 2020-02-04

Revision HistoryVersion Date Change

1.4 2020-02-04 Ordering Information Characteristics

SFH 4855

13 Version 1.4 | 2020-02-04

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