Semiconductor Introduction

ENGI 242ELEC 222

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Specification Symbol Notation Standard

Type of value Symbol Subscript

Instantaneous value of time varying value Lower case Lower case

Instantaneous total value Lower Case Upper case

RMS or effective value Upper Case Lower case

Maximum or average value, dc value Upper Case Upper Case

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Factors effecting Resistivity

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Ge and Si single-crystal structure

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Atomic structure: (a) germanium; (b) silicon

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Energy levels: discrete levels in isolated atomic structures

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Conduction and valence bands of an insulator; semiconductor; and conductor.

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Antimony impurity in n-type material

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Effect of donor impurities on the energy band structure

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Boron impurity in p-type material.

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Electron versus hole flow.

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(a) n-type material; (b) p-type material.

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p-n junction with no external bias

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No-bias conditions for a semiconductor diode

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Forward-biased p-n junction

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Reverse-bias conditions for a semiconductor diode

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Reverse-biased p-n junction

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As the reverse bias voltage becomes greater, the charge stored in the depletion region increases.