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Chemical Sensing Robots Using Porous Silicon. N 2. N 2. N 2. Jason R. Dorvee and Dr. Michael J. Sailor University of California, San Diego. Selective Sensing. Toluene at 2,750ppm. Toluene at 2,750ppm. Porous Silicon Synthesis. Toluene at 2,750ppm. Nerve Agent Sensor. TNT Sensor. - PowerPoint PPT Presentation
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Jason R. Dorvee and Dr. Michael J. SailorUniversity of California, San Diego
3 mm
The chemical sensing robot senses chemicals by sensing light intensity. The robot uses two phototransistors, each covered with a porous silicon film as the chemical detector. In a steady state the phototransistors appear as closed circuits allowing current to pass through them causing only one motor to turn. In a darkened state the phototransistors appear as open circuits allowing current to pass through the “bistable multi-vibrator” system. The robot memorizes which side of the chemical it is on, so when the right sensor is “on” the left motor is activated, and when the left sensor is “on” the right motor is activated, when both sensors are “on” both motors are activated. Current to the motors is amplified via transistors (TR3 & TR5, TR4 & TR6). A separate battery is used for the motors to prevent electrical noise from affecting the sensor circuit.
Porous Silicon lift-off films can be sonicated into dust particles and chemically modified to target the interfaces between different kinds of chemicals. Further modification to these particles allow them to be influenced by magnetic fields. Particles can not only be moved to, and made to gather around a particular chemical of interest, but once they have attached to the interface they can be used to transport and/or mix various chemicals. The particles can also be encoded with specific barcodes to identify and label individual chemicals.
Red LED Lift-Off Film
Phototransistor
Small Low Powered Sensor Using A Porous Silicon Rugate Lift-Off film
FLOW OUT
FLOW IN
Wavelength (nm)
500 600 700 800 900
Si-R
R-Si
Si-R
R-Si
+ A
Chemical Sensing with porous silicon photonic crystal: After stabilization and functionalization, the porous silicon exhibits a given reflectivity spectrum. Upon introduction of a targeted analyte, the refractive index of the crystal changes, leading to a shift in the reflectivity spectrum.
n }d
I 4I0 cos2(2 nd
)
Inte
nsi
ty
Porous Silicon Synthesis
2Si + 6HF + 2h+ Si
H
Porous Si Surface
+ H2SiF6
+ 2H+ + 1/2 H2
Electron microscope image of porous Si. Side view of porous Si electrochemically etched into a single crystal Si wafer.
Background: “Properties of Porous Silicon;” Canham, L., Ed.; EMIS Datareviews, INSPEC: London, 1997; Vol. 18.
Etch Assembly. Schematic of teflon etch cell used to electrochemically treat silicon in its conversion to porous silicon
Red LED652nm
Red Rugate Chip in air655nm
Red RugateChip in ~59 Torr Ethanol 725nm
Reflectance Spectra Using A Tungsten White-Light Source
In air, the Red PSi Rugate reflects at 655nm, in-line with a 652nm Red LED. As ethanol vapor condenses and fills the pores the reflectance of the rugate shifts away from the LED, and reflects at 725nm.
Reflectance Spectra Using Red LED Light Source at 652nm
Chip in ~59 Torr EthanolMINIMUM REFLECTANCE
Chip in air (655nm)MAXIMUM REFLECTANCE
In air, the Red PSi Rugate, in-line with a Red LED yields a maximum reflectance value of the LED light source as it is reflected off the chip. As ethanol vapor condenses and fills the pores the reflectance of the rugate shifts away from the LED, yielding a minimum reflectance of the LED light source.
Pure N2 versus DMMP 31ppm
-4.04
-4.02
-4
-3.98
-3.96
-3.94
-3.92
-3.9
-3.88
-3.86
-3.84
0 100 200 300 400 500 600 700 800 900 1000
Time in Seconds
Volta
ge
DMMP at31ppm
N2
DMMP at31ppm
DMMP at31ppm
N2N2
Pure N2 versus Toluene 2,750ppm
-3.66
-3.64
-3.62
-3.6
-3.58
-3.56
-3.54
-3.52
0 100 200 300 400 500 600 700 800 900 1000
Time in Seconds
Vol
tage
Toluene at2,750ppm
N2
Toluene at2,750ppm
N2
Toluene at2,750ppm
N2
*Smart Dust is a term developed by Kris Pister at UC Berkeley to describe millimeter and sub-milimeter MEMS devices.