0.177(4.50)0.157(3.99)

0.208(5.28)0.194(4.93)

inch(mm)

0.090(2.29)0.078(1.98)

0.060(1.52)0.030(0.76)

0.065(1.65)0.049(1.25)

0.008(0.203)MAX

0.012(0.305)0.006(0.152)

0.100(2.54)0.110(2.79)

www.diode.co.kr

1.

FEATURES

MECHANICAL DATA

Ratings at 25oC ambient temperature unless otherwise specified

US1D US1G US1J US1K US1M

US1D US1G US1J US1K US1M

Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 V

Maximum RMS voltage VRWS 140 280 420 560 700 V

Maximum DC blocking voltage VDC 200 400 600 800 1000 VMaximum average forw ard rectif ied current atTL=110OC IF(AV) A

Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load(JEDECMethod)

IFSM A

Maximum instantaneous forward voltage at1.0A VF V

Maximum DC reverse current @TA=25oC

at rated DC blockjing volt A=125oCage @T

Maximum reverse recovery time at IF=0.5AIR=1.0A Irr=0.25A trr ns

Typical junction capacitance at 4.0V,1MHZ CJ pF

RθJA

RθJL

Operating temperature range TJ oC

Storage temperature range TSTG oC

1.0

US1B

◇ Low forward voltage,low power loss

◇ Low profile package

◇ Easy pick and place ◇ Ultrafast recovery times for high efficiency

Case:JEDEC DO-214AC,molded plastic body over passivated chip

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

15

30.0

50

1.0 1.3 1.7

DO-214AC(SMA)

Maximum thermal resistance (NOTE1) oC/W

US1B

High temperature soldering:111 250oC/10 seconds on terminals

US1A

Polarity: Color band denotes cathode end Weight: 0.002 ounces, 0.064 gram

μΑ

Terminals:Solder Plated, solderable per MIL-STD-750,Method 2026

US1A---US1M

REVERSE VOLTAGE: 50 - 1000 VFORWARD CURRENT: 1.0 A

Built-in strain relief,ideal for automated placement

Device marking code

Glass passivated chip junctions

Plastic package has underwriters laboratoriesvvvvvflammability classification 94V-0 For surface mount applications

200.0

-55------- +150

10.0

55

20

IR

NOTE: 1.P.C.B.mounted on 0.2X0.2"(5.0X5.0mm) copper pad area

-55------- +150

UNITS

50 100

35 70

50 100

US1A

20

75

SAMYANG ELECTRONICSSAM YANG

ULTRA FAST RECTIFIER

◇

◇

◇

◇

◇

◇

◇

◇

◇

0.40.001

0.01

0.1

1

0.6 0.8 1.0 1.2 1.4 1.6

US1J-US1M

US1A-US1G

1.8

10

PULSE WIDTH=300μs1%DUTY CYCLE TJ=25

00 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0

0 .6

1 .0

1 .5

0 .8

0 .4

0 .2

R E S IS T IV E O R IN D U C T IV E L O A D

0 .2 X 0 .2 "(5 .0 X 5 .0m m ) C O P P E R P A D A R E A S

01 10 100

15

10

30

25

5

20

TL=110℃8.3ms SINGLE HALF SINE-WAVE(JEDEC METHOD)

2.

www.diode.co.kr

0

0.1

10

20 40 60 80 1000.01

TJ=125℃

125℃

100℃

25℃

1

100

0.1 1 100.010.1

1

10

100

100

AV

ER

AG

E F

OR

WA

RD

RE

CTI

FIE

DC

UR

RE

NT,

AM

PE

RE

S

PE

AK

FO

RW

AR

D S

UR

GE

CU

RR

EN

T,A

MP

ER

ES

INS

TAN

TAN

EO

US

FO

RW

AR

DC

UR

RE

NT,

AM

PE

RE

S

INS

TAN

TAN

EO

US

RE

VE

RS

ELE

AK

AG

E C

UR

RE

NT(

mA

)

REVERSE VOLTAGE(V)

FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARDSURGE CURRENT

LEAD TEMPERATURE ℃ NUMBER OF CYCLES AT 60HZ

INSTANTANEOUS FORWARD VOLTAGE(V)

FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE

PERCENT OF RATED PEAK REVERSE VOLTAGE. ( ％)

JUN

CTI

ON

CA

PA

CIT

AN

CE

(pF)

T,PULSE DURATION,

RATINGS AND CHARACTERISTIC CURVES US1A---US1M

FIG.3 -- TYPICAL INSTANTANEOUS FORWARDCHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS

FIG.5 -- TYPICAL JUNCTION CAPACITANCE

TRA

NS

IEN

T TH

ER

MA

L IM

PE

DA

NC

E(O

C/W

)

FIG.1 -- FORWARD CURRENT DERATING CURVE

TJ=25f=1MHz2

4

6

10

20

4060

0.1 0.2 0.4 1 2 4 10 40 10020

UF1K--UF1M

UF1A--UF1J

1

100