DHIRAJLAL GANDHI COLLEGE OF TECHNOLOGY DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING Year/Sem/Dept: IV/VII/ECE TIME: 1 hr 30 mins Max.Marks:50 Date: 24.07.2014 CYCLE TEST-I RF AND MICROWAVE ENGINEERING PART-A (Answer All Questions) 5X2=10 1. Define skin effect. 2. Why,the S-parameters are used in microwave? 3. What is reflection loss? 4. What are the parameters used to evaluate the performance of an amplifier? 5. Define transducer and unilateral power gain. PART-B 40 marks 6. a) (i) Explain in detail about low frequency parameters. (8) (ii) Derive the scattering matrix relation between the input and output of an two port and n port network? (8) (OR) b) (i)State and explain the properties of S- parameters. (10) (ii)Discuss about behavior of wire, resistors at RF with neat diagrams. (6) 7. a) relations’ for RF transistor amplifier design. (16) (OR) b) Explain stability considerations for RF transistor amplifier design with neat diagram. (16) 8. a) Sketch the two port network and cascaded network and derive the expression for transmission matrix. (8) (OR) b) Give a detailed note on Inductors and capacitors with neat diagram. (8) DHIRAJLAL GANDHI COLLEGE OF TECHNOLOGY DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING Year/Sem/Dept: IV/VII/ECE TIME: 1 hr 30 mins Max.Marks:50 Date: 24.07.2014 CYCLE TEST-I
DHIRAJLAL GANDHI COLLEGE OF TECHNOLOGYDEPARTMENT OF ELECTRONICS
& COMMUNICATION ENGINEERING
Year/Sem/Dept: IV/VII/ECETIME: 1 hr 30 mins Max.Marks:50Date:
24.07.2014CYCLE TEST-IRF AND MICROWAVE ENGINEERING PART-A (Answer
All Questions) 5X2=101. Define skin effect.2. Why,the S-parameters
are used in microwave?3. What is reflection loss?4. What are the
parameters used to evaluate the performance of an amplifier?5.
Define transducer and unilateral power gain.PART-B 40 marks6. a)
(i) Explain in detail about low frequency parameters.(8) (ii)
Derive the scattering matrix relation between the input and output
of an two port and n port network?(8)(OR) b) (i)State and explain
the properties of S-parameters.(10) (ii)Discuss about behavior of
wire, resistors at RF with neat diagrams.(6) 7. a) Discuss various
aspects of amplifier-power relations for RF transistor amplifier
design. (16)(OR) b) Explain stability considerations for RF
transistor amplifier design with neat diagram. (16)
8. a) Sketch the two port network and cascaded network and
derive the expression for transmission matrix. (8)(OR) b) Give a
detailed note on Inductors and capacitors with neat diagram.(8)
DHIRAJLAL GANDHI COLLEGE OF TECHNOLOGYDEPARTMENT OF ELECTRONICS
& COMMUNICATION ENGINEERING
Year/Sem/Dept: IV/VII/ECETIME: 1 hr 30 mins Max.Marks:50Date:
24.07.2014CYCLE TEST-IRF AND MICROWAVE ENGINEERING PART-A (Answer
All Questions) 5X2=101. Define skin effect.2. Why,the S-parameters
are used in microwave?3. What is reflection loss?4. What are the
parameters used to evaluate the performance of an amplifier?5.
Define transducer and unilateral power gain.PART-B 40 marks 6. a)
(i) Explain in detail about low frequency parameters. (8) (ii)
Derive the scattering matrix relation between the input and output
of an two port and n-port network? (8)(OR) b) (i)State and explain
the properties of S-parameters. (10) (ii)Discuss about behavior of
wire, resistors at RF with neat diagrams. (6)7. a) Discuss various
aspects of amplifier-power relations for RF transistor amplifier
design. (16)(OR) b) Explain stability considerations for RF
transistor amplifier design with neat diagram. (16)
8. a) Sketch the two port network and cascaded network and
derive the expression for transmission matrix. (8)(OR) b) Give a
detailed note on Inductors and capacitors with neat diagram.
(8)
