RF Bipolar Small Signal Transistor RF FET Small Signal Transistor … · 2011. 6. 8. · BF494 NPN 20V 30mA 300mW 67 120MHz 4dB@ TO-92 CEB BF495 NPN 20V 30mA 300mW 35 120MHz 4dB@

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RF Bipolar Transistor

Transistor Type Max.Vce Max. IeMax.Diss.

hfe /Gain

Max.Freq.

NoiseFigure Case

Pin1 2 3

2N918 NPN 15V 50mA 350mW 15dB@200MHz 600MHz6dB @60MHz TO-72 EBC

2N2857 NPN 15V 40mA 200mW 12,5dB@450MHz 1,6GHz4,5dB @450MHz TO-72

2N3663 NPN 12V 30mA 350mW 1,5dB@200MHz 700MHz6,5dB @60MHz TO-92 BCE

2N3904 NPN 40V 200mA 625mW 300MHz 5dB @15,7kHz TO-92 EBC

2N4124 NPN 25V 200mA 350mW 120 300MHz 5dB@15,7kHz TO-92 EBC

2N4957 PNP 30V 30mA 200mW 17dB@450MHz 1,6GHz3dB @450MHz TO-72

2N5031 NPN 10V 20mA 200mW 14dB@450MHz 1,6GHz2,5dB @450MHz TO-72


2N5770 NPN 15V 50mA 350mW 15dB@200MHz6dB @60MHz TO-92 EBC


2SC372 NPN 60V 150mA 400mW 200MHz TO-92

2SC380 NPN 30V 50mA 300mW 29dB@10,7MHz 100MHz TO-92 ECB

2SC383 NPN 45V 50mA 300mW 33dB@45MHz 300MHz TO-92 ECB


2SC394 NPN 25 100mA 200MHz TO-92

2SC454 NPN 30V 100mA 200mW 35dB@455kHz 230MHz TO-92 ECB

2SC458 NPN 30V 100mA 200mW 230MHz TO-92 ECB

2SC460 NPN 30V 100mA 200mW 29dB@10,7MHz 230MHz5dB @1Mhz TO-92 ECB


2SC535 NPN 30V 20mA 100mW 20dB@100MHz 450MHz3,5dB@100MHz TO-92 ECB

2SC536 NPN 40V 100mA 180MHz TO-92 ECB



2SC784 NPN 40V 20mA 500MHz TO-92 ECB

2SC829 NPN 45V 50mA 250mW 70 230MHz TO-92 ECB

2SC941 NPN 30V 100mA 400mW 50 120MHz 3,5dB@1MHz TO-92 ECB


2SC1009 NPN 20V 50mA 150mW 100 250MHz 2dB @1MHz SOT-23


2SC1342 NPN 20V 30mA 100mW 17dB@100MHz 320MHz5,5dB @100MHz TO-92 ECB

2SC1674 NPN 30V 25mA 250mW 18dB@100MHz 600MHz5dB@100MHz TO-92 ECB

2SC1675 NPN 30V 30mA 250mW 40 150MHz 4dB @1MHz TO-92 ECB

2SC1730 NPN 30V 50mA 250mW 1,1GHz TO-92

2SC1815 NPN 40V 100mA 300mW 70 200MHz 1dB@1kHz TO-92 ECB


2SC1906 NPN 20V 50mA 300mW 33dB@45MHz 1GHz TO-92 ECB

2SC1907 NPN 20V 50mA 300mW 40 1,1GHz TO-92 ECB


2SC2026 NPN 15V 50mA 2.2GHz TO-92 BEC

2SC2037 NPN 15V 50mA TO-92


2SC2216 NPN 45V 50mA 300mW 29dB@45MHz 300MHz TO-92 BEC




2SC2471 NPN 30V 50mA 310mW 20 2GHz TO-92 ECB

2SC2498 NPN 20V 50mA 300mW 80 3,5GHz 2,5dB @500MHz TO-92 BEC

2SC2512 NPN 20V 50mA 300mW 20dB@200MHz 900MHz3,8dB @200MHz TO-92 BEC

2SC2644 NPN 12V 120mA 500mW 18dB@100MHz 4GHz2dB@100MHz TO-92 BEC

2SC2668 NPN 30V 20mA 100mW 18dB@100MHz 550MHz2,5dB@100MHz MINI ECB

2SC2669 NPN 30V 50mA 200mW 30dB@10,7MHz 100MHz MINI ECB

2SC2717 NPN 25V 50mA 300mW 28dB@45MHz 300MHz TO-92 BEC


2SC2753 NPN 12V 70mA 300mW 27dB@100MHz 5GHz1,7dB@100MHz TO-92 BEC

2SC2786 NPN 20V 20mA 250mW 22dB@100MHz 600MHz3dB@100MHz MINI ECB

2SC2787 NPN 30V 30mA 250mW 90 250MHz 2dB @1MHz MINI ECB

2SC2814 NPN 20V 30mA 150mW 25dB@100MHz 200MHz3dB@100MHz SOT-23

2SC2839 NPN 20V 30mA 150mW 25dB@100MHz 200MHz3dB@100MHz MINI ECB

2SC2996 NPN 30V 50mA 150mW 15dB@100MHz 100MHz4dB@150 SOT-23

2SC2999 NPN 20V 30mA 150mW 28dB@100MHz 450MHz2,2dB@100MHz MINI ECB

2SC3000 NPN 20V 30mA 250mW 25dB@100MHz 200MHz3dB@100MHz TO-92 ECB

2SC3011 NPN 7V 30mA 150mW 27dB@100MHz 6,5MHz2,3dB @1GHz SOT-23

2SC3099 NPN 20V 30mA 150mW 24dB@100MHz 4GHz1,7dB @100MHz SOT-23

2SC3127 NPN 12V 50mA 150mW 10,5dB@900MHz 4,5GHz2,2dB@900MHz SOT-23

2SC3128 NPN 12V 50mA 350mW 10,5dB@900MHz 4,5GHz2,2dB@900MHz TO-92 BEC

2SC3142 NPN 20V 30mA 150mW 28dB@100MHz 450MHz2,2dB@100MHz SOT-23

2SC3195 NPN 30V 20mA 100mW 550MHz MINI ECB

2SC3355 NPN 12V 100mA 600mW 9,5dB@1GHz 6,5GHz1,1dB@1GHz TO-92 BEC

2SC3356 NPN 12V 100mA 200mW 11dB@1GHz 7GHz1,1dB @1GHz SOT-23

2SC3429 NPN 12V 70mA 150mW 28dB@100MHz 5GHz1,7dB @100MHz SOT-23

2SC3510 NPN 12V 50mA 600mW 10,5dB@900MHz 4,5GHz2,2dB@900MHz TO-92 BEC

2SC3512 NPN 10V 50mA 600mW 10,5dB@900MHz 6GHz1,6dB@900MHz TO-92 BEC

2SC3582 NPN 10V 65mA 600mW 13dB@1GHz 8GHz1,2dB@1GHz TO-92 BEC

2SC3605 NPN 12V 80mA 600mW 27dB@100MHz 6,5GHz1,1dB@100MHz TO-92 BEC

2SC3606 NPN 12V 80mA 150mW 28dB@100MHz 5GHz1dB @500MHz SOT-23

2SC3663 NPN 12V 50mA 350mW 15dB@200MHz6dB @60MHz TO-92 EBC

2SC4173 NPN 30V 50mA 150mW 100 250MHz 2dB@1MHz SOT-23

2SC4308 NPN 20V 300mA 600mW 50 2,5GHz TO-92 BEC

2SC4317 NPN 10V 40mA 150mW 28dB@100MHz 7GHz1dB @1GHz SOT-23

2SC4321 NPN 10V 40mA 150mW 28dB@100MHz 7GHz1dB @1GHz SOT-23

2SC4322 NPN 10V 15mA 150mW 24dB@100MHz 7GHz1,4dB @1GHz SOT-23

2SC4399 NPN 20V 30mA 150mW 25dB@100MHz 200MHz3dB @100MHz SOT-23

2SC4433 NPN 18V 50mA 300mW 26dB@100MHz 750MHz MINI ECB

2SC4628 NPN 20V 20mA 200mW 10dB@800MHz 1GHz7dB @100MHz TO-92 ECB

2SC4629 NPN 9V 50mA 600mW 11,5dB@900MHz 8GHz1,2dB @900MHz TO-92 ECB

2SC4874 NPN 12V 50mA 600mW 10dB@900MHz 5,8GHz1,8dB @900MHz TO-92 ECB

2SC4875 NPN 9V 50mA 450mW 11,5dB@900MHz 8,5GHz1,3dB @900MHz TO-92 ECB



2SC5085 NPN 12V 80mA 150mW 16,5dB@500MHz 5GHz1dB @500MHz SOT-23



2SC5106 NPN 10V 30mA 150mW 21dB@100MHz 4GHz SOT-23

2SC5109 NPN 10V 60mA 150mW 21dB@100MHz 3GHz SOT-23



2SC5570 NPN 15V 50mA 350mW 1,5dB@200MHz 700MHz6,5dB @60MHz TO-92 EBC

2SK380 NPN 30V 50mA 300mW 400MHz TO-92 ECB

2SK1923 NPN 30V 20mA 100mW 550MHz 2,5dB@100MHz TO-92 ECB

BF115 NPN 30V 25mA 125mW 45 250MHz TO-72


BF173 NPN 25V 25mA 200mW 40 700MHz 2,6dB @36MHz TO-72 BEC*




BF198 NPN 30V 25mA 500mW 400MHz 3dB @ TO-92

BF199 NPN 25V 25mA 300mW 40 550MHz 6dB @45MHz TO-92 CEB


BF224 NPN 30V 50mA 250mW 30 450MHz TO-92 CEB

BF240 NPN 40V 25mA 300mW 67 150MHz 4dB@60MHz TO-92 CEB

BF241 NPN 40V 25mA TO-92 CEB

BF254 NPN 20V 30mA 200mW 200MHz TO-92

BF255 NPN 20V 30mA 300mW 200MHz TO-92 CEB

BF314 NPN 30V 25mA 300mW 30 600MHz 2dB @200MHz CBE

BF324 PNP 30V 25mA 300mW 25 450MHz TO-92 CBE

BF370 NPN 15V 200mA 500mW 40 500MHz TO-92 CBE

BF414 NPN 30V 25mA 300mW 80 400MHz 3dB@100MHz TO-92 EBC

BF494 NPN 20V 30mA 300mW 67 120MHz 4dB@ TO-92 CEB

BF495 NPN 20V 30mA 300mW 35 120MHz 4dB@ TO-92 CEB

BF496 NPN 20V 20mA 300mW 30dB@100MHz 550MHz2,5dB @200Mhz TO-92

BF506 PNP 35V 30mA 300mW 17,5dB@200MHz 300MHz3dB @200Mhz TO-92 EBC

BF689K NPN 15V 25mA 360mW 16dB@200MHz 1,8GHz3dB @200Mhz TO-92

BF748 NPN 20V 50mA 500mW 20dB@100MHz 1,2GHz4,5dB @100Mhz TO-92

BF751 NPN 14V 35mA 600mW 11dB@1000MHz 6,5GHz2,7dB @1000Mhz TO-92

BF763 NPN 15V 25mA 360mW 13dB@800MHz 1,8GHz TO-92

BF775 NPN 15V 30mA 280mW 15dB@900MHz 5GHz1,8dB @900MHz SOT-23

BF799W NPN 20V 35mA 280mW 800MHz 3dB @100MHz SOT-23

BF840 NPN 40V 25mA 280mW 65 380MHz 1,7dB@100kHz SOT-23

BF926 NPN 20V 25mA 250mW 17,5dB@200MHz 350MHz5dB @200Mhz TO-92

BF959 NPN 20V 100mA 500mW 40 600MHz 3dB@200MHz TO-92

BFR90 NPN 15V 30mA 300mW 19,5dB@500MHz 5GHz2,2dB @500MHz SOT-37

BFR90A NPN 15V 30mA 300mW 16dB@800MHz 6GHz2,8dB @800MHz SOT-37

BFR91 NPN 12V 50mA 300mW 18dB@500MHz 5GHz1,9dB @500MHz SOT-37


BFR92 NPN 15V 30mA 200mW 19,5dB@500MHz 5GHz2,2dB @500MHz SOT-23


BFR92L NPN 15V 35mA 350mW 3,4GHz SOT-23

BFR93 NPN 12V 40mA 200mW 18dB@500MHz 5GHz1,9dB@500MHz SOT-23

BFR93A NPN 12V 40mA 200mW 14dB@800MHz 6GHz1,6dB@800MHz SOT-23

BFR93L NPN 12V 35mA 350mW 3GHz 2,5dB@30MHz SOT-23

BFR96 NPN 15V 100mA 500mW 14,5dB@500MHz 4,5GHz2dB @500MHz SOT-37

BFR96T NPN 15V 75mA 500mW 16dB@500MHz 5GHz2,3dB@500MHz SOT-23

BFR96TS NPN 15V 100mA 700mW 11,5dB@800MHz 5GHz3,3dB@500MHz SOT-23

BFR520 NPN 15V 70mA 300mW 60 9GHz 1,1dB@900MHz SOT-23

BFY90 NPN 15V 50mA 200mW 21dB@200MHz 1,7GHz2,5dB @200MHz TO-72 EBC*

KTC3194 NPN 30V 20mA 625mW 18dB@100MHz 550MHz2,5dB@100MHz MINI ECB

KTC3195 NPN 30V 20mA 400mW 18dB@100MHz 550MHz2,5dB@100MHz MINI ECB

KTC3880 NPN 30V 20mA 150mW 18dB@100MHz 550MHz2,5dB@100MHz SOT-23

MPS536 PNP 10V 30mA 625mW 14dB@500MHz 5GHz4,5dB @500MHz TO-92

MPS571 NPN 10V 80mA 625mW 14dB@500MHz 5GHz2dB @500MHz TO-92

MPS901 NPN 15V 30mA 625mW 12dB@900MHz 5GHz2,5dB @900MHz TO-92

MPS911 NPN 12V 40mA 625mW 16,5dB @500MHz 7GHz1,7dB @500MHz TO-92

MPS3866 NPN 30V 400mA 625mW 10dB@400MHz 800MHz TO-92

* = Shield lead connected to case



Component DatabaseComponents for CB-Radios and transmitter/receiver equipment



RF Power Transistor

Shortform Transistor Catalogue

Integrated Circuits

Variable capacitance diode

Albrecht Radio Equipment

Scanner Documentation

http://wintransceiver.com/http://members.tripod.com/Malzev/cbrn/index.htmhttp://members.tripod.com/Malzev/scan/index.htm

President CB-Radio Modification

Technical Documentation for Radio Equipment

LINK`S

NTE Electronics Inc, Electronic Cross Reference Database

ECG Cross Reference

Fujitsu Semiconductor

Hewlett-Packard Semiconductor

KTC Semiconductor (Corea)

Motorola RF-Components

National Semiconductor

NEC Semiconductor

New Japan Radio Co., Ltd.

Nippon Precision Circuits

Philips Components

ST Komponenter

Sanyo Semiconductor

Siemens Semiconductor

Texas Instruments Semiconductor

Toshiba Components

Toshiba Semiconductor - PDF

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FET Transistor

Transistor Type Max.VdsMax.

IdMax.Diss. Gain

Max.Freq.

NoiseFigure Case

Pin1234

2N3819 N-CHJ-FET 25V 10mA 350mW3dB @400MHz TO-92 SGD

2N4416 N-CHJ-FET 30V 15mA 300mW18dB @100MHz 450MHz

2dB @100MHz TO-72 SDG*

2N4416A N-CHJ-FET 35V 15mA 300mW18dB @100MHz 400MHz

2dB @100MHz TO-72 SDG*

2N5245 N-CHJ-FET 30V 18mA 360mW TO-92

2N5248 N-CHJ-FET 30V 20mA 200mW TO-92 SGD


3dB @100MHz TO-92 DSG





2N5668 N-CHJ-FET 25V 5mA 360mW 400MHz2,5dB @100MHz TO-92



2SK19 N-CHJ-FET 18V 10mA 200mW TO-92 DSG

2SK44 N-CHJ-FET MINI

2SK49 N-CHJ-FET TO92

2SK125 N-CHJ-FET 25V 30mA 200mW1,5dB @100MHz TO-92

2SK161 N-CHJ-FET 18V 10mA 200mW18dB @100MHz

2,5dB @100MHz MINI DSG






1,8dB @100MHz DSG

2SK709 N-CHJ-FET 20V 10mA 300mW TO-92 DSG

2SK710 N-CHJ-FET 20V 10mA 200mW MINI DGS

3N200N-CH DualGateMOSFET

20V 50mA 330mW 500MHz 4,5dB @400MHz TO-72


25V 50mA TO-72




TO-72


25V 50mA 360mW TO-72


TO-72


TO-72

3SK39N-CH DualGateMOSFET

20V 25mA TO-72


15V 25mA 250mW TO-72


TO-72


TO-72


20V 35mA TO-72


20V 35mA TO-72


TO-72


20V 3mA TO-72


20V 7mA 200mW SOT-37


TO-72


20V 5mA


SOT-37



15V 30mA 150mW 25dB@200MHz1,4dB@200MHz SOT-143 SDGG


TO-72






13,5V 30mA 150mW 19,5dB@800MHz1,9dB@800MHz SOT-143 SDGG




13,5V 30mA 150mW 22dB@500MHz2dB@500MHz SOT-143 SDGG


13,5V 30mA 150mW 27dB@200MHz1,1dB@200MHz SOT-143 SDGG




9V 1mA 150mW 20,5dB@800MHz1dB@800MHz SOT-143 SDGG






13,5V 30mA 100mW 22dB@800MHz2dB@800MHz SOT-143 SDGG












9V 1mA 100mW 20,5dB@800MHz1dB@800MHz SOT-143 SDGG










6V 1mA 100mW 15dB@2GHz1,4dB@2GHz SOT-143 SDGG

40673N-CH DualGateMOSFET

20V 50mA 330mW 400MHz 6dB @200MHz TO-72


20V 50mA TO-72


20V 50mA 14dB @50MHz3dB @50MHz TO-72

BF244 N-CHJ-FET 30V 50mA 500mW TO-92

BF245A N-CHJ-FET 30V 6,5mA 300mW 700MHz1,5dB @100MHz TO-92 DSG

BF245B N-CHJ-FET 30V 615mA 300mW 700MHz1,5dB @100MHz TO-92 DSG

BF245C N-CHJ-FET 30V 25mA 300mW 700MHz1,5dB @100MHz TO-92 DSG

BF256 N-CHJ-FET 30V 10mA 300mW 1GHz TO-92 GSD

BF410A N-CHJ-FET 20V 30mA 300mW1,5dB @100MHz TO-92 GSD

BF410B N-CHJ-FET 20V 30mA 300mW1,5dB @100MHz TO-92 GSD

BF410C N-CHJ-FET 20V 30mA 300mW1,5dB @100MHz TO-92 GSD

BF410D N-CHJ-FET 20V 30mA 300mW1,5dB @100MHz TO-92 GSD

BF543 N-CHMOS-FET 20V 30mA 200mW22dB@200MHz 300MHz

1dB @200MHz SOT-23

BF900N-CH DualGateMOSFET

SOT-37



BF908WRN-CH DualGateMOSFET

12V 40mA 300mW 0,6dB @200MHz SOT-143


20V 50mA 300mW


20V 20mA 225mW 800MHz SOT-37


20V 30mA 200mW 20dB@200MHz 2GHz1,8dB@200MHz TO-50 DSGG

BF964SN-CH DualGateMOSFET

20V 30mA 200mW 25dB@200MHz 2GHz1dB@200MHz TO-50 DSGG


20V 30mA 200mW 25dB@200MHz 2GHz1dB@200MHz TO-50 DSGG


20V 20mA


20V 40mA 200MHz


12V 30mA 800MHz


20V 20mA 200mW 1,6dB @200MHz SOT-143

BF990AN-CH DualGateMOSFET

18V 30mA 200mW 2dB@800MHz SOT-143


20V 30mA 200mW 29dB@100MHz0,7dB@100MHz SOT-143


20V 40mA 200mW 1,2dB@200MHz SOT-143


20V 30mA 200mW 25dB@200MHz1dB@200MHz SOT-143


20V 30mA 200mW 25dB@200MHz 2GHz1dB@200MHz SOT-143 SDGG




20V 30mA 200mW 25dB@200MHz1dB@200MHz SOT-143




20V 30mA 200mW 25dB@200MHz 1GHz1dB@200MHz SOT-143



BF543 N-CHMOS-FET 20V 30mA 200mW25dB@200MHz 300MHz

1dB @200MHz SOT-23


14V 30mA 280mW 2dB@800MHz SOT-143

MFE201N-CH DualGateMOSFET

TO-72

MPF102 N-CHJ-FET 25V 20mA 310mW 200MHz4dB @400MHz TO-92

MPF106 N-CHJ-FET 25V 30mA 310mW 400MHz4dB @200MHz TO-92

SK3050N-CH DualGateMOSFET

20V 50mA 330mW 400MHz 6dB @200MHz TO-72





* = Shield lead connected to case



RF Power Transistor

1 2 3TO-92L

1 2 3TO-202

1 2 3TO-202N

1 2 3TO-126

1 2 3TO-220 T-31E

Bipolar NPN Power Transistor

Transistor Power Gain Voltage Frequency Mode Case Pin 123

2N3375 10W 5dB 28V 400MHz FM TO-60

2N3553 2,5W 12dB 28V 175MHz FM/AM TO-39

2N3632 20W 7dB 28V 175MHz FM TO-60

2N5943 1W 8dB 15V 400MHz FM TO-39

2N6094 75W 15dB 28V 30MHz FM/AM/SSB TO-217

2SC1173 10W 100MHz FM/AM/SSB TO-220

2SC1306 16W 30MHz FM/AM/SSB TO-220 B C E

2SC1307 16W 12dB 12V 30MHz FM/AM/SSB TO-220 B C E

2SC1590 5W 10dB 12,5V 136-174MHz FM TO-220 B E C

2SC1591 14W 7,5dB 12,5V 136-174MHz FM TO-220 B E C

2SC1678 5W 30MHz TO-220 B C E

2SC1728 8W 80MHz TO-202 E B C

2SC1729 14W 10dB 13,5V 175MHz FM T-31E

2SC1909 10W 14,5dB 13,5V 50MHz FM/AM/SSB TO-220 B C E

2SC1944 13W 11,1dB 12V 30MHz TO-220 B C E

2SC1945 16W 14,5dB 12V 30MHz FM/AM/SSB TO-220 B E C

2SC1946 25W 6,7dB 13,5V 175MHz FM T-31E

2SC1946A 30W 10dB 13,5V 175MHz FM T-31E

2SC1957 1,8W 17dB 12V 30MHz TO-126 E C B

2SC1966 3W 7,8dB 13,5V 470MHz FM T-31E

2SC1967 7W 6,7dB 13,5V 470MHz FM T-31E

2SC1968 14W 3,7dB 13,5V 470MHz FM T-31E

2SC1968A 14W 5,4dB 13,5V 470MHz FM T-31E


2SC1970 1,5W 10dB 13,5V 175MHz TO-220 B E C

2SC1971 7W 10dB 13,5V 175MHz TO-220 B E C

2SC1972 14W 10dB 13,5V 175MHz TO-220 B E C

2SC1973 1W 50MHz TO-92L B C E

2SC1974 13W 10dB 13,5V 30MHz TO-220 B C E

2SC1975 4W 10dB 13,5V 30MHz TO-220 B C E

2SC2028 1,8W 30MHz TO-126 E C B

2SC2029 6W 30MHz TO-220 B C E

2SC2036A 1,4W TO-202 B C E

2SC2050 20W 12dB 13,5V 30MHz FM/AM/SSB TO-220 B C E

2SC2053 0,2W 15,7dB 12V 175MHz FM/AM TO-92L B C E

2SC2055 0,25W 15,3dB 12V 175MHz FM/AM TO-92L B C E

2SC2075 4W 13,5 27MHz TO-220 B C E

2SC2078 4W 13dB 12V 100MHz FM/AM TO-220 B C E

2SC2086 0,45W 13dB 12V 175MHz FM/AM TO-92L B C E


2SC2094 15W 8,8dB 13,5V 175MHz FM/AM/SSB T-31E

2SC2166 6W 13,8dB 12V 30MHz FM/AM/SSB TO-220 B C E

2SC2207 16W TO-220 B E C

2SC2237 6W 13,8dB 13,5V 175MHz FM T-31E

2SC2312 18,5W 27MHz FM/AM/SSB TO-220 B C E

2SC2314 1,8W 17dB 12V 180MHz FM/AM TO-126 E C B

2SC2509 13W 14dB 30MHz TO-220 B E C

2SC2527 60W TO-220

2SC2538 0,6W 10dB 12V 175MHz FM/AM TO-92L B C E

2SC2539 14W 14,5dB 13,5V 175MHz FM T-31E

2SC2660 30W TO-220

2SC2695 23W 1,9dB 13,5V 520MHz FM T-31E

2SC3001 6W 13dB 7,2V 175MHz FM T-31E

2SC3018 3W 13dB 7,2V 175MHz FM T-31E

2SC3020 3W 10dB 12,5V 520MHz FM T-31E

2SC3021 7W 7,7dB 12,5V 520MHz FM T-31E

2SC3022 18W 4,8dB 12,5V 520MHz FM T-31E

2SC3103 2,8W 6,7dB 7,2V 520MHz FM T-31E

2SC3104 6W 4,8dB 7,2V 520MHz FM T-31E

2SC3133 13W 14dB 12V 1,5-30MHz FM/AM/SSB TO-220 B E C

2SC3299 20W TO-220

2SC4137 4W 400MHz TO-126

2SC4693 FM/AM TO-92L B C E

KTC1006 1W 100MHz FM/AM TO-92L E C B

KTC1969 16W 12dB 12V 100MHz FM/AM TO-220 B C E

KTC2078 4W 11dB 12V 100MHz FM/AM TO-220 B C E

MRF161 5W 13,5dB 12,5V 225-500MHz FM/AM TO-220 B E C

MRF162 15W 13,5dB 12,5V 225-500MHz FM/AM TO-220 B E C

MRF163 25W 12dB 12,5V 225-500MHz FM/AM TO-220 B E C

MRF260 5W 10dB 12,5V 136-174MHz FM TO-220 B E C

MRF261 10W 5,2dB 12,5V 136-174MHz FM TO-220 B E C

MRF262 14W 7,5dB 12,5V 136-174MHz FM TO-220 B E C

MRF264 30W 5,2dB 12,5V 136-174MHz TO-220 B E C

MRF340 8W 13dB 28V 30-200MHz TO-220 B E C

MRF342 24W 11dB 28V 30-200MHz TO-220 B E C

MRF344 60W 6dB 28V 30-200MHz TO-220

MRF475 12W 10dB 13,5V 1,5-30MHz FM/AM/SSB TO-220 B C E

MRF476 3W 15dB 13,5V 1,5-30MHz FM/AM/SSB TO-220 B C E

MRF477 40W 15dB 13,5V 1,5-30MHz FM/AM/SSB TO-220 B E C

MRF479 15W 10dB 13,5V 1,5-30MHz FM/AM/SSB TO-220

MRF485 15W 10dB 28V 1,5-30MHz TO-220

MRF486 40W 15dB 28V 1,5-30MHz TO-220

MRF496 40W 15dB 13,5V 1,5-30MHz TO-220

MRF497 60W 10dB 13,5V 27-50MHz TO-220 B E C

MRF660 7W 5,4dB 12,5V 400-512MHz TO-220

FET Power Transistor

MS1307 25W dB 13,5V 30MHz FM/AM/SSB TO-220 G D S



2SC1307Silicon NPN TransistorFinal RF Power Output

The 2SC1307 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications.

B C E

Features:

High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz)●

Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz

●

Application:

10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band●

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)

Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.7WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/WThermal Resistance, Junction-to-Ambient, RthJA 73.5°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - V

Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - V

Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µA

Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µA

DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180

Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 18 - W

Collector Efficiency 60 70 - %

Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.



2SC1590Silicon NPN Transistor

RF Power Output

The 2SC1590 is a silicon NPN epitaxial planer typetransistor designed for 136-174MHz RF poweramplifiers on VHF band mobile radio applications.

B E C

Features:

High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)●

Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz

●

Application:

4 to 5 Watt Output Power Amplifier Applications in VHF Band●


Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 12ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 12.5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 10°C/WThermal Resistance, Junction-to-Ambient, RthJA 83°C/W









Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 6 7 - W






RF Power Output

The 2SC1591 is a silicon NPN epitaxial planer typetransistor designed for 136-174MHz RF poweramplifiers on VHF band mobile radio applications.

B E C

Features:

High Power Gain: Gpe >/= 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)●


●

Application:

10 to 14 Watt Output Power Amplifier in VHF Band Mobile Radio Applications●


Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 3.5ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 25WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -55° to +175°CThermal Resistance, Junction-to-Case, RthJC 6°C/WThermal Resistance, Junction-to-Ambient, RthJA 100°C/W









Power Output PO VCC = 13.5V, Pin = 2.5W, f = 175MHz 14 15 - W






Description:

2SC1909 is a silicon NPN transistor in a TO220 type case designed for use in highpower output amplifier stages such as citizen band communications equipment.

B C E

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC Continuous Peak

3A5A

Collector Power Dissipation (TA = +25°C), PD 1.2WCollector Power Dissipation (TC = +50°C), PD 10WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C



Collector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0 80 - - V

Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm 75 - - V

Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 - - V



DC Current Gain hFE VCE = 5V, IC = 0.5A 25 - 200

Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - 0.15 0.60 V

Base-Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 0.1A - 0.9 1.2 V

Current Gain-Bandwidth Product fT VCE = 10V, IC = 0.1A 100 150 - MHz

Output Capacitance Cob VCB = 10V, f = 1MHz 25 - -

Power Output PO VCC = 12V, Pin = 0.2W, f = 27MHz 4.0 - - W

Collector Efficiency 60 - - %





B E C

Features:

High Power Gain: Gpe >/= 14,5dB (VCC = 12V, PO = 18W, f = 27MHz)●


●

Application:



Collector-Emitter Voltage (RBE = Infinity), VCEO 40VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/WThermal Resistance, Junction-to-Ambient, RthJA 83,3°C/W


Final RF Power Output in VHF band mobile radioapplication.

E C E

The 2SC1946 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers.

E B E

Features:

High Power Gain: Gpe >/= 6,7dB (VCC = 13,5V, PO = 28W, f = 175MHz)●

Ability to Withstand Infinite VSWR Load when Operated at: VCC = 15,2V, PO = 30W, f = 175MHz

●

Application:

25 Watt output power amplifiers in VHF band.●


Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 7ACollector Power Dissipation (TA = +25°C), PD 3WCollector Power Dissipation (TC = +50°C), PD 50WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -65° to +175°CThermal Resistance, Rth-c 3°C/W






Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 2 mA

Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 1 mA

DC Forward Current Gain hFE VCE = 10V, IC = 0,2A, Note 1 10 50 180

Power Output PO VCC = 13,5V, Pin = 6W, f = 175MHz 28 32 - W





2SC1946ASilicon NPN Transistor


E C E

The 2SC1946A is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers.

E B E

Features:

High Power Gain: Gpe >/= 10dB (VCC = 13,5V, PO = 30W, f = 175MHz)●


●

Application:

25 Watt output power amplifiers in VHF band.●


Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 7ACollector Power Dissipation (TA = +25°C), PD 3WCollector Power Dissipation (TC = +50°C), PD 50WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -55° to +175°CThermal Resistance, Rth-c 3°C/W







Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 1 mA









B C E

Features:



●

Application:



Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.7WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/W

Thermal Resistance, Junction-to-Ambient, RthJA 73.5°C/W
















B C E

Features:



●

Application:



Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.7WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/W

Thermal Resistance, Junction-to-Ambient, RthJA 73.5°C/W













RF Power Output

The 2SC1970 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on VHFband mobile radio applications.

B E C

Features:

High Power Gain: Gpe >/= 9,2dB (VCC = 13.5V, PO = 6W, f = 175MHz)●

Application:

0,8 to 1 Watt Output Power Amplifier Applications in VHF Band●


Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 0,6ACollector Power Dissipation (TA = +25°C), PD 1WCollector Power Dissipation (TC = +50°C), PD 5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 25°C/WThermal Resistance, Junction-to-Ambient, RthJA 125#176;C/W









Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 1 1,2 - W






RF Power Output


B E C

Features:



●

Application:





RF Power Output


B E C

Features:

High Power Gain: Gpe >/= 7,5dB (VCC = 13.5V, PO = 14W, f = 175MHz)●


●

Application:



Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 3,5ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 25WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6°C/WThermal Resistance, Junction-to-Ambient, RthJA 100°C/W


RF Amplifier

The 2SC1973 is a silicon NPN epitaxial planer typetransistor designed for RF amplifiers on HF bandmobile radio applications.

B C E

Application:

Driver Amplifier Applications in HF Band●


Collector-Emitter Voltage (RBE = Infinity), VCEO 55VCollector-Base Voltage, VCBO -VEmitter-Base Voltage, VEBO -VCollector Current, IC 0,5ACollector Power Dissipation (TA = +25°C), PD 1WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA -°C/W



2SC2036AAudio Amplifier, Driver

E C B

Absolute Maximum Ratings: (TA = +25°C unles otherwise specified)

Collector-Base Voltage, VCBO 180VCollector-Emitter Voltage, VCEO 160VEmitter-Base Voltage, VEBO 5VCollector Current, IC Continuous Peak

1.5A3.0A

Collector Dissipation (TA = +25°C), PC 1WCollector Dissipation (TC = +25°C), PC 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)





Collector Cutoff Current ICBO VCB = 160V, IE = 0 - - 10 µA

DC Current Gain hFE IC = 150mA, VCE = 5V 60 - 200

IC = 500mA, VCE = 5V 30 - -

Collector-Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA - - 1 V

Base-Emitter Voltage VBE VCE = 5V, IC = 150mA - - 1.5 V

Transition Frequency fT IC = 500mA, VCE = 5V - 140 - MHz

Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 14 - pF




RF Amplifier

The 2SC2053 is a silicon NPN epitaxial planer typetransistor designed for RF amplifiers on VHF bandmobile radio applications.

B C E

Features:

High Power Gain: Gpe >/= 15,7dB (VCC = 13,5V, PO = 0,15W, f = 175MHz)●

Application:

Driver Amplifier Applications in VHF Band●


Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 40VEmitter-Base Voltage, VEBO 4VCollector Current, IC 0,3ACollector Power Dissipation (TA = +25°C), PD 0,6WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA 183°C/W









Power Output PO VCC = 13.5V, Pin = 4mW, f = 175MHz 0,15 0,2 - W






RF Amplifier


B C E

Features:

High Power Gain: Gpe >/= 13dB (VCC = 7,2V, PO = 0,2W, f = 175MHz)●

Application:



Collector-Emitter Voltage (RBE = Infinity), VCEO 9VCollector-Base Voltage, VCBO 18VEmitter-Base Voltage, VEBO 4VCollector Current, IC 0,3ACollector Power Dissipation (TA = +25°C), PD 0,5WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA 220°C/W








The 2SC2078 is a silicon NPN transistor in a TO220type case designed for use in high power outputamplifier stages such as citizen band communicationsequipment.

B C E


Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC Continuous Peak

3A5A











RF Amplifier

The 2SC2086 is a silicon NPN epitaxial planer typetransistor designed for RF amplifiers on HF bandmobile radio applications.

B C E

Features:

High Power Gain: Gpe >/= 13dB (VCC = 12V, PO = 0,3W, f = 27MHz)●

Application:

Driver Amplifier Applications in HF Band●


Collector-Emitter Voltage (RBE = Infinity), VCEO 35VCollector-Base Voltage, VCBO 75VEmitter-Base Voltage, VEBO 4VCollector Current, IC 1ACollector Power Dissipation (TA = +25°C), PD 0,8WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA 137,5°C/W









Power Output PO VCC = 12V, Pin = 15mW, f = 27MHz 0,3 0,45 - W






The 2SC2092 is a silicon NPN transistor in a TO-220type case designed for use in medium power outputamplifier stages such as citizen band communicationsequipment.

B C E



3A5A












E C E

The 2SC2094 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers.

E B E

Features:

High Power Gain: Gpe >/= 8,8dB (VCC = 13,5V, PO = 15W, f = 175MHz)●


●

Application:

10 to 14 Watt output linear power amplifiers in VHF band.●


Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 40VEmitter-Base Voltage, VEBO 4,5VCollector Current, IC 3,5ACollector Power Dissipation (TA = +25°C), PD 2WCollector Power Dissipation (TC = +50°C), PD 30WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -55° to +175°CThermal Resistance, Rth-c 5°C/W





Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4,5 - - V


Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 0,5 mA









B C E

Features:

High Power Gain: Gpe >/= 13,8dB (VCC = 12V, PO = 6W, f = 27MHz)●

Application:



Collector-Emitter Voltage (RBE = Infinity), VCEO 75VCollector-Base Voltage, VCBO 75VEmitter-Base Voltage, VEBO 5VCollector Current, IC 4ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 12,5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 10°C/WThermal Resistance, Junction-to-Ambient, RthJA 83°C/W









Power Output PO VCC = 12V, Pin = 0,25W, f = 27MHz 6 7,5 - W






RF Power Output, Driver

The 2SC2314 are silicon transistors in a TO-126 typepackage designed for 27MHz CB Transceiver DriverApplications.

E C B

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector-Base Voltage, VCBO 75VCollector-Emitter Voltage (RBE = 150 Ohms), VCER 75VCollector-Emitter Voltage, VCEO 45VEmitter-Base Voltage, VEB 5VCollector Current, IC Continuous Peak

1.0A1.5A

Collector Dissipation (TA = +25°C), PD 750mWCollector Dissipation (TC = +25°C), PD 5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)


Collector Cutoff Current ICBO VCB = 40V, IE = 0 - - 1.0 µA

Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 1.0 µA

Collector-Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 75 - - V

Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohms 75 - - V

V(BR)CEO IC = 1mA, RBE = Infinity 45 - - V


DC Current Gain hFE VCE = 5V, IC = 500mA 60 - 320

Gain-Bandwidth Product fT VCE = 10V, IC = 50mA 180 250 - MHz

Collector-Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA - 0.2 0.6 V

Base-Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 50mA - 0.9 1.2 V

Output Capacitance Cob VCB = 10V, f = 1MHz - 15 25 pF

Output Power PO VCC = 12V, f = 27MHz, Pi = 35mW 1.0 1.8 - W


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RF Amplifier


B C E

Features:

High Power Gain: Gpe >/= 10dB (VCC = 13,5V, PO = 0,5W, f = 175MHz)●

Application:



Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 40VEmitter-Base Voltage, VEBO 4VCollector Current, IC 0,4ACollector Power Dissipation (TA = +25°C), PD 0,7WCollector Power Dissipation (TC = +25°C), PD 3WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA 157°C/W








B E C

Features:



●

Application:

10 Watt Output Power SSB Amplifier Applications in HF Band●


Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 70VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/WThermal Resistance, Junction-to-Ambient, RthJA 83,3°C/W









Power Output PO VCC = 12V, Pin = 0,5W, f = 27MHz 13 16 - W





2SC3299Power Amp Driver, Output Switch

The 2SC3299 are silicon transistors in a TO-220 typepackage designed for general purpose poweramplification and switching such as output or driverstages in applications such as switching regulators,converters, and power amplifiers.

B C E

Features:

Low Collector-Emitter saturation Voltage●

Fast Switching Speeds●

Complementary Pairs Simplifies Design●

Absolute Maximum Ratings:Collector-Emitter Voltage, VCEO 80VEmitter-Base Voltage, VEB 5VCollector Current, IC Continuous Peak (Note 1)

10A20A

Total Power Dissipation (TC = +25°C), PD 50WTotal Power Dissipation (TA = +25°C), PD 1.67WOperating Junction Temperature Range, TJ -55° to +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 2.5°C/WThermal Resistance, Junction-to-Ambient, RthJA 75°C/WLead Temperature (During Soldering, 1/8" from case, 5sec), TL +275°C

Note 1. Pulse Width

OFF Characteristics

Collector Cutoff Current ICES VCE = 80V, VBE = 0 - - 10 µA

Emitter Cutoff Current IEBO VEB = 5V - - 100 µA

ON Characteristics

DC Current Gain hFE VCE = 1V, IC = 2A, TJ = +25°C 60 - -

VCE = 1V, IC = 4A, TJ = +25°C 40 - -

Collector-Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 400mA - - 1.0 V

Base-Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 800mA - - 1.5 V

Dynamic Characteristics

Collector Capacitance Ccb VCB = 10V, ftest = 1MHz - 130 - pF

Gain Bandwidth Product fT IC = 500mA, VCE = 10V, f = 20MHz - 50 - MHz

Switching Times

Delay and Rise Time td + tr IC = 5A, IB1 = 500mA - 300 - ns

Storage Time ts IC = 5A, IB1 = IB2 = 500mA - 500 - ns

Fall Time tf - 140 - ns



2SC4137Power Amp Driver

The 2SC4137 is a High-Gain Amplifier Transistor forHigh-Frequency.

Features:

High DC Current Gain

Absolute Maximum Ratings:Collector-Emitter Voltage, VCEO 20VEmitter-Base Voltage, VEB 6VCollector Current, IC Continuous 100mA DCTotal Power Dissipation (TC = +25°C), PD 4WOperating Junction Temperature Range, TJ -55° to +150°CStorage Temperature Range, Tstg -55° to +150°C



OFF Characteristics

Collector Cutoff Current ICES VCE = 15V, VBE = 0 - - 0,5 µA

Emitter Cutoff Current IEBO VEB = 6V - - 0,5 µA

DC Current Gain hFE VCE = 3V, IC = 10mA 820 - 2700

Transition frequency fT VCE = 10V, IC = 10mA - 400 - MHz



KTC1006Silicon NPN Transistor

The KTC1006 is a silicon NPN epitaxial planar typetransistor designed for CB tranceiver TX driveramplifier application.

E C B

Features:

High Power Gain●

Wide Area of Safe Operation.●

Application:

Recommended for Driver Stage Application of AM Transmitter.●


Collector-Emitter Voltage (RBE = Infinity), VCEO 80VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC 800mACollector Power Dissipation (TC = +50°C), PD 1WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C



Collector Cutoff Current ICBO VCB = 60V IE = 0 - - 0,1 µA

Collector Cutoff Current ICER VCB = 80V RBE = 220ohm - - 0,1 µA

DC Forward Current Gain hFE VCE = 2V, IC = 150mA 100 - -

Transition Frequency fT VCE = 5V, IC = 500mA - 150 - MHz

KTC1969Silicon NPN TransistorFinal RF Power Output

The KTC1969 is a silicon NPN triple diffused typetransistor designed for CB tranceiver TX finalamplifier application and HF transceiver application.

B C E

Features:



Application:

Recommended for Output Stage Application of AM 10W Transmitter.●


Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C








DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 55 - 180

Transition Frequency fT VCE = 5V, IC = 500mA 100 - - MHz

Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 - - W



KTC2078Silicon NPN TransistorFinal RF Power Output

The KTC2078 is a silicon NPN triple diffused typetransistor designed for CB tranceiver TX finalamplifier application and HF transceiver application.

B C E

Features:

High Power Gain●


Application:

Recommended for Output Stage Application of AM 4W Transmitter.●


Collector-Emitter Voltage (RBE = Infinity), VCEO 80VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 4VCollector Current, IC 4ACollector Power Dissipation (TC = +50°C), PD 10WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C






DC Forward Current Gain hFE VCE = 5V, IC = 0,5mA 100 - 200

Transition Frequency fT VCE = 5V, IC = 500mA 100 - - MHz

Power Output PO VCC = 12V, Pin = 0,3W, f = 27MHz 4 - - W



MRF260Silicon NPN Transistor

RF Power Output

The MRF260 is a silicon NPN epitaxial planer typetransistor designed for 136-174MHz RF poweramplifiers on VHF band mobile radio applications.

B E C

Features:



●

Application:




MRF262Silicon NPN Transistor

RF Power Output

The MRF262 is a silicon NPN epitaxial planer typetransistor designed for 136-174MHz RF poweramplifiers on VHF band mobile radio applications.

B E C

Features:

High Power Gain: Gpe >/= 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)●


●

Application:

10 to 14 Watt Output Power Amplifier in VHF Band Mobile Radio Applications●


Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 3.5ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 25WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -55° to +175°CThermal Resistance, Junction-to-Case, RthJC 6°C/WThermal Resistance, Junction-to-Ambient, RthJA 100°C/W









Power Output PO VCC = 13.5V, Pin = 2.5W, f = 175MHz 14 15 - W





MRF475Silicon NPN TransistorFinal RF Power Output

The MRF475 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications.

B C E

Features:



●

Application:





The MRF476 is a silicon NPN transistor in a TO220type case designed for use in high power outputamplifier stages such as citizen band communicationsequipment.

B C E



3A5A











The MRF485 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications.

Features:



●

Application:





MS1307MOSFET

N-Channel Power MOS-FET

The MS1307 is a MOS power N-Channel FET in aTO-220 type package designed for RF powerapplications.

G D S



Transistor Database


2N109 GE-P 35V 0.15A 0.165W | 2N1304 GE-N 25V 0.3A 0.15W 10MHz 2N1305 GE-P 30V 0.3A 0.15W 5MHz | 2N1307 GE-P 30V 0.3A 0.15W B>60 2N1613 SI-N 75V 1A 0.8W 60MHz | 2N1711 SI-N 75V 1A 0.8W 70MHz 2N1893 SI-N 120V 0.5A 0.8W | 2N2102 SI-N 120V 1A 1W 50 2N2223A 2xSI-N 100V 0.5A 0.6W >50 | 2N2243A SI-N 120V 1A 0.8W 50MHz 2N2369A SI-N 40V 0.2A .36W 12/18ns | 2N2857 SI-N 30V 40mA 0.2W >1GHz 2N2894 SI-P 12V 0.2A 1.2W 60/90ns | 2N2905A SI-P 60V 0.6A 0.6W 45/100 2N2906A SI-P 60V 0.6A 0.4W 45/100 | 2N2907A SI-P 60V 0.6A 0.4W 45/100 2N2917 SI-N 45V 0.03A >60Mz | 2N2926 SI-N 25V 0.1A 0.2W 300MHz 2N2955 GE-P 40V 0.1A 0.15W 200MHz | 2N3019 SI-N 140V 1A 0.8W 100MHz 2N3053 SI-N 60V 0.7A 5W 100MHz | 2N3054 SI-N 90V 4A 25W 3MHz 2N3055 SI-N 100V 15A 115W 800kHz | 2N3055 SI-N 100V 15A 115W 800kHz 2N3055H SI-N 100V 15A 115W 800kHz | 2N3251 SI-P 50V 0.2A 0.36W 2N3375 SI-N 40V 0.5A 11.6W 500MHz | 2N3439 SI-N 450V 1A 10W 15MHz 2N3440 SI-N 300V 1A 10W 15MHz | 2N3441 SI-N 160V 3A 25W POWER 2N3442 SI-N 160V 10A 117W 0.8MHz | 2N3495 SI-P 120V 0.1A 0.6W>150MHz 2N3502 SI-P 45V 0.6A 0.7W 200MHz | 2N3553 SI-N 65V 0.35A 7W 500MHz 2N3571 SI-N 30V 0.05A 0.2W 1.4GHz | 2N3583 SI-N 250/175V 2A 35W>10MHz 2N3632 SI-N 40V 0.25A 23W 400MHz | 2N3646 SI-N 40V 0.2A

Documents

RF Bipolar Small Signal Transistor RF FET Small Signal Transistor … · 2011. 6. 8. · BF494 NPN 20V 30mA 300mW 67 120MHz 4dB@ TO-92 CEB BF495 NPN 20V 30mA 300mW 35 120MHz 4dB@