1IXYS reserves the right to change limits, test conditions and dimensions

Contents Page

Symbols and Definitions 2Nomenclature 2General Informations for Chips 3Assembly Instructions 4FRED, Rectifier Diode and Thyristor Chips in Planar Design 5

IGBT ChipsVCES IC

G-Series, Low VCE(sat) B2 Types 600 ...1200 V 7 ... 20 A 6G-Series, Fast C2 Types 600 V 7 ... 20 A 6S-Series, SCSOA Capability, Fast Types 600 V 10 ... 20 A 6E-Series, Improved NPT³ technology 1200 ... 1700 V 20 ... 150 A 7

MOSFET ChipsVDSS RDS(on)

HiPerFETTM Power MOSFET 70 ...1200 V 0.005 ... 4.5 Ω 8-10PolarHT/HVTM Power MOSFET 55 ... 600 V 0.015 ... 0.135 Ω 11PolarHT/HVTM HiPerFET Power MOSFET 100 ... 600 V 0.0075 ... 0.74 Ω 12-14N-Channel Depletion Mode MOSFET 500 ...1000 V 30 ... 110 Ω 15P-Channel Power MOSFET -100 ...-600 V 0.06 ... 1.2 Ω 15

Chip outlines 16-23

Bipolar ChipsVRRM / VDRM IF(AV)M / IT(AV)M

Rectifier Diodes 800 ... 2200 V 12 ... 788 A 24-25FREDs 200 ... 1200 V 8 ... 244 A 26-28Low Leakage FREDs 200 ... 1200 V 9 ... 148 A 29-30SONIC-FRDTM Diodes 600 ... 1800 V 12 ... 150 A 31-32GaAs Schottky Diodes 100 ... 300 V 3.5 ... 25 A 33-34Schottky Diodes 8 ... 200 V 28 ... 145 A 35-38Phase Control Thyristors 800 ... 2200 V 15 ... 540 A 39-40Fast Rectifier Diodes 1600 ... 1800 V 10 ... 26 A 41

Direct Copper Bonded (DCB) Ceramic Substrates

What is DCB? 42

DCB Specification 43

www.ixys.com

2 © 2008 IXYS All rights reserved

Registration No.:OHSAS 18001:

001947 OH

Symbols and Definitions Cies Input capacitance of IGBT Ciss Input capacitance of MOSFET -di/dt Rate of decrease of forward current IC DC collector current ID Drain current IF Forward current of diode IF(AV)M Maximum average forward current at specified Th

IFSM Peak one cycle surge forward current IGT Gate trigger current IR Reverse current IRM Maximum peak recovery current IT Forward current of thyristor IT(AV)M Maximum average on-state current of a thyristor

at specified Th ITSM Maximum surge current of a thyristor RDS(on) Static drain-source on-state resistance Rthjc Thermal resistance junction to case rT Slope resistance of a thyristor or diode

(for power loss calculations) Tcase Case temperature Th Heatsink temperature tfi Current fall time with inductive load Tj, T(vj) Junction temperature Tjm, T(vj)m Maximum junction temperature trr Reverse recovery time of a diode VCE(sat) Collector-emitter saturation voltage VCES Maximum collector-emitter voltage VDRM Maximum repetitive forward blocking

voltage of thyristor VDSS Drain-source break-down voltage VF Forward voltage of diode VR Reverse voltage VRRM Maximum peak reverse voltage of thyristor or

diode VT On-state voltage of thyristor VT0 Threshold voltage of thyristors or diodes (for

power loss calculation only)

Chip and DCB Ceramic Substrates catalogueEdition 2008

Published by IXYS Semiconductor GmbHMarketing CommunicationsEdisonstraße 15, D-68623 Lampertheim

© IXYS Semiconductor GmbH All Rights reserved

As far as patents or other rights of third parties are concerned, liability is onlyassumed for chips and DCB parts per se, not for applications, processes andcircuits implemented with components or assemblies. Terms of delivery and theright to change design or specifications are reserved.

NomenclatureIGBT and MOSFET DiscreteIXSD 40N60A (Example)IX IXYS

Die technologyE NPT3 IGBTF HiPerFETTM Power MOSFETG Fast IGBTS IGBT with SCSOA capabilityT Standard Power MOSFET

D Unassembled chip (die)

40 Current rating, 40 = 40 A

N N-channel typeP P-channel type

60 Voltage class, 60 = 600 V

xxMOSFET

A Prime RDS(on) for standard MOSFETQ Low gate charge dieQ2 Low gate charge die, 2nd generationP PolarHT/HV Power MOSFETL Linear Mode MOSFET

IGBT-- No letter, low VCE(sat)

A Or A2, std speed typeB Or B2, high speed typeC Or C2, very high speed type

W-CWP 55-12/18 (Thyristor Example)

W Package type

C Chip functionC = Silicon phase control thyristor

W Unassembled chip

P Process designatorP = Planar passivated chip cathode on top

55 Current rating value of one chip in A

12/18 Voltage class, 12/18 = 1200 up to 1800 V

Diode and Thyristor ChipsC-DWEP 69-12 (Diode Example)

C Package type

D Chip functionD = Silicon rectifier diode

W Unassembled chip

EP Process designatorEP = Epitaxial rectifier diodeN = Rectifier diode, cathode on topP = Rectifier diode, anode on topFN = Fast Rectifier diode, cathode on topFP = Fast Rectifier diode, anode on top

69 Current rating value of one chip in A

-12 Voltage class, 12 = 1200 VRegistration No.:ISO/TS 16949:

001947 TS2

Registration No.:ISO 14001:001947 UM

3IXYS reserves the right to change limits, test conditions and dimensions

General Informations for Chips

When mounting Power Semiconductor chips to a header, ceramic substrate or hybrid thick film circuit, the solder system and the chipattach process are very important to the reliability and performance of the final product. This brochure provides several guidelinesthat describe recommended chip attachment procedures. These methods have been used successfully for many years at IXYS.

Available Packaging OptionsIXYS offers various options.Please order from one of the following possibilities:

Packaging Options Delivery form

C-...* Chips in tray (Waffle Pack); Electrically tested

T-...* Chips in wafer, unsawed; Bipolar = 5" (125 mm∅) wafer;or 6 " (150 mm∅)

W-...* Chips in wafer on foil, sawed; Bipolar = 5" (125 mm∅) wafer;or 6 " (150 mm∅)

...* must be amended by the exact chip type designation.

Package, Storage and HandlingChips should be transported in their original containers. All chip transfer to other containers or for assembly should be done only withrubber-tipped vacuum pencils. Contact with human skin (or with a tool that has been touched by hand) leaves an oily residue that mayadversely impact subsequent chip attach or reliability.

At temperatures below 104°F (40°C), there is no limitation on storage time for chips in sealed original packages. Chips removed fromoriginal packages should be assembled immediately. The wetting ability of the contact metallization with solder can be preserved bystorage in a clean and dry nitrogen atmosphere.

The IGBT and MOSFET Chips are electrostatic discharge (ESD) sensitive. Normal ESD precautions for handling must be observed.Prior to chip attach, all testing and handling of the chips must be done at ESD safe work stations according to DIN IEC 47(CO) 701.Ionized air blowers are recommended for added ESD protection.

Contamination of the chips degrades the assembly results.Finger prints, dust or oily deposits on the surface of the chips have to beabsolutely avoided.Rough mechanical treatment can cause damage to the chip.

Electrical TestsThe electrical properties listed in the data sheet presume correctly assembled chips. Testing of non-assembled chips requires thefollowing precautions:

• High currents have to be supplied homogeneously to the whole metallized contact area.

• Kelvin probes must be used to test voltages at high currents

• Applying the full specified blocking or reverse voltage may cause arcing across the glass passivated junction termination,because the electrical field on top of the passivation glass causes ionization of the surrounding air. This phenomenon can beavoided by using inert fluids or by increasing the pressure of the gas surrounding the chip to values above 30 psig (2 bars).

General Rules for AssemblyThe linear thermal expansion coefficient of silicon is very small compared to usual contact metals. If a large area metallized siliconchip is directly soldered to a metal like copper, enormous shear stress is caused by temperature changes (e.g. when cooling down fromthe solder temperature or by heating during working conditions) which can disrupt the solder mountdown.

If it is found that larger chips are cracking during mountdown or in the application, then the use of a low thermal expansion coefficientbuffer layer, e.g. tungsten, molybdenum or Trimetal®, for strain relief should be considered. An alternative solution is to soft-solder theselarger chips to DCB ceramic substrates because of their matching thermal expansion coefficients.

Electrically tested, rejects are inked

Electrically tested, rejects are inked

4 © 2008 IXYS All rights reserved

MOS/IGBT ChipsRecommended Solder System

IXYS recommends a soft solder chip attach using a solder composition of 92.5 % Pb, 5 % Sn and 2.5 % Ag. The maximum chip attachtemperature is 460°C for MOSFET and 360°C for HiPerFETTM and IGBT.

Wire Bonding

It is recommended to use wire of diameter not greater than 0.38 mm (0.015") for bonding to the source emitter and gate pads. Multiplewires should be used in place of thicker wire to handle high drain or emitter currents. See tables for number of recommended wirebonds. For smaller gate pads, 0.15 mm diameter wire is recommended.

Thermal Response Testing

To assure good chip attach processing, thermal response testing per MIL STD 750, Method 3161 or equivalent should be performed.

Bipolar ChipsAssembling

IXYS bipolar semiconductor chips have a soft-solderable, multi-layer metallization (Ti/Ni/Ag) on the bottom side and, on top, eitherthe same metallization scheme or an alumunium layer sufficiently thick for ultrasonic bonding. Note that the last layer of metal forsoldering is pure silver.

Regardless of their type all chips possess the same glass passivated junction termination system on top of the chip. For that reasonthey can be easily chip bonded or they can all be simply soldered to a flat contacting electrode in accordance to the General Rules onPage 3. All kinds of the usual soft solders with melting points below 660°F (350°C) can be used thanks to their pure silver top metal.Solders with high melting points are preferable due to their better power cycling capability, i.e. they are more resistant to thermalfatigue.

Soldering temperature should not exceed 750°F (400°C). The maximum temperature should not be applied for more than fiveminutes.

As already mentioned above the electrical properties quoted in the data sheets can only be obtained with properly assembled chips.This is only possible when all contact materials to be soldered together are well wetted and the solder is practically free of voids.

A simple means to achieve good solder connections is to use a belt furnace running with a process gas containing at least 10 %Hydrogen in Nitrogen.Other approved methods are also allowed, provided that the above mentioned temperature-time-limits are not exceeded andtemperature shocks above 930°F/min (500 K/min) are avoided.

We do not recommend the use of fluxes for soldering!

Ultrasonic Wire Bonding

Chips provided with a thick aluminium layer are designed for ultrasonic wire bonding. Wire diameters up to 500 µm can be useddependent on chip types. Setting wires in parallel and application of stitch bonding lead to surge current ratings comparable tosoldered chips.

Coating

Although the chips are glass passivated, they must be protected against arcing and environmental influences. The coating materialthat is in contact with the chip surface must have the following properties:

- elasticity (to prevent mechanical stress)- high purity, no contamination with alkali metals- good adhesion to metals and glass passivation.

Assembly Instructions

5IXYS reserves the right to change limits, test conditions and dimensions

-di /dtF

di /dtR

-di /dtFtrr

IRM

IF

Qr

0.9 IRM

0.25 IRM

10%

100% 110%

I

t

t

V

VR

VFR

VF

tfr

ta tb

FRED, Rectifier Diode and Thyristor Chips in Planar Design

Fast Recovery Epitaxial Diodes (FRED)Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheelingdiodes. At increasing switching frequencies, the proper functioning and efficiency of the power switch, aside from conduction losses,is determined by the turn-off behavior of the diode (characterized by Qrr, IRM and trr - Fig. 1).

Rectifier Diode and Thyristor Chips

The figures 3 a-c show cross sectional views of the diode and thyristorchips in the passivation area. All diode and thyristor chips (DWN, DWFN,CWP) are fabricated using separation diffusion processes so that alljunctions terminate on the topside of the chip. Now the entire bottomsurfaces of all chips are available for soldering onto a DCB or other ceramicsubstrate without a molybdenum strain buffer. The elimination of the strainbuffer and its solder joint reduces thermal resistance and increasesblocking voltage stability. The junction termination areas are passivatedwith glass, whose thermal expansion coefficient matches that of silicon. Allsilicon chips increasingly use planar technology with guard rings andchannel stoppers to reduce electric fields on the chip surface.The contact areas of the chips have vapor deposited metal layers whichcontribute substantially to their high power cycle capability. All chips areprocessed on silicon wafers of 5" diameter and diced after a wafer sampletest which auto-matically marks chips not meeting the electrical specification.The chip geometry is square or rectangular.

Fig. 3a-cCross sections of Chips in the passivation areaa) Diode chip, type DWN, DWFNb) Diode chip, type DWP, DWFPc) Thyristor chip, type CWP

The reverse current characteristic following the peak reverse current IRM isanother very important property. The slope of the decaying reverse currentdirr/dt results from design parameters; technology and diffusion of the FREDchip Fig. 2. In a circuit this current slope, in conjunction with parasitic induc-tances (e.g. connecting leads) causes over-voltage spikes and highfrequency interference voltages.The higher the dirr/dt ("hard recovery" or"snap-off" behavior) the higher is the resulting additional stress for both thediode and the paralleled switch. A slow decay of the reverse current ("softrecovery" behavior), is the most desirable characteristic, and this is designedinto all FRED. The wide range of available blocking voltages makes itpossible to apply these FRED as output rectifiers in switch-mode powersupplies (SMPS) as well as protective and free-wheeling diodes for powerswitches in inverters and welding power supplies.

Metalization

Fig. 1: Current and voltage during turn-on andturn-off switching of fast diodes

Fig. 2: Cross section of glassivated planar epitaxialdiode chip (type DWEP)

Epitaxie Schicht n-

Substrat n+

+

Kathode

Anode

Guard ring

Substrate n+

Epitaxy layer n-

Cathode

Anode

Glasspassivation

n+ -Emitter

Fig. 3b)

Fig. 3c)

Glaspassivierung Feldring Guard ring

Glasspassivation

n

n

p

Glaspassivierung

Guardring Channel stopper

Glasspassivation

n

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Glasspassivation

Metalization

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+

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501.

902.

1050

6.3

4.7

5047

05

•9.

19.

01.

21.

2IX

ED

75N

120

•75

1.90

2.10

759.

27.

875

710

5•

11.0

11.0

1.2

1.2

IXE

D10

0N12

0•

100

1.90

2.10

100

11.8

10.1

100

985

4•

12.6

12.6

1.2

1.2

IXE

D15

0N12

0•

150

2.15

2.40

150

21.0

15.0

150

1110

3•

12.0

12.0

1.2

1.2

IXE

D75

N17

017

00•

752.

302.

6075

25.0

19.0

7563

05

•11

.911

.91.

21.

221

0 ±1

5IX

ED

100N

170

•10

02.

302.

6010

032

.027

.010

088

04

•13

.613

.61.

21.

2

①

①

①

①

①

Not

for

new

des

ign

Tole

ranc

e±0

.05

±0.0

5±0

.05

±0.0

5

9©

200

8 IX

YS

All

right

s re

serv

ed

HiP

erFE

TTM P

ower

MO

SFE

T

This

tab

le li

stgs

act

ive

chip

s on

ly.

Ple

ase

cont

act

fact

ory

for

olde

r de

sign

s.

HiP

erFE

TTM P

ower

MO

SFE

Ts

The

Hig

h P

erfo

rman

ce M

OS

FET

fam

ily o

f Pow

erM

OS

FETs

is d

esig

ned

to p

rovi

de s

uper

ior

dv/d

tpe

rform

ance

whi

le e

limin

atin

g th

e ne

ed f

or d

iscr

ete,

fast

rec

over

y "f

ree

whe

elin

g di

odes

" in

a b

road

rang

e of

pow

er s

witc

hing

app

licat

ions

.

This

cla

ss o

f Pow

er M

OS

FET

uses

IXY

S' H

DM

OS

proc

ess,

whi

ch im

prov

es t

he r

ugge

dnes

s of

the

MO

SFE

T w

hile

red

ucin

g th

e re

vers

e re

cove

ry ti

me

ofth

e fa

st in

trins

ic d

iode

to 2

50 n

s or

less

at e

leva

ted

(150

°C)

junc

tion

tem

pera

ture

. Th

e pe

rform

ance

of

the

fast

intri

nsic

dio

de is

com

para

ble

to d

iscr

ete

high

volta

ge d

iode

s an

d is

tai

lore

d to

min

imiz

e po

wer

diss

ipat

ion

and

stre

ss in

the

MO

SFE

T.

Type

VD

SS

RD

S(O

N)

Chi

pC

hip

Siz

eS

ourc

e -

Equ

ival

ent

max

.m

ax.

type

dim

ensi

ons

bond

wir

ede

vice

reco

mm

ende

dda

ta s

heet

VΩ

mm

mils

IXFD

180N

07-9

X70

0.00

7IX

9X14

.20

x 10

.60

559

x 41

715

mil

x 6

IXF

K18

0N07

IXFD

340N

07-9

Y0.

005

IX9Y

15.8

1 x

14.3

162

3 x

563

12 m

il x

12IX

FN

340N

07IX

FD18

0N08

5-9X

850.

007

IX9X

14.2

0 x

10.6

055

9 x

417

15 m

il x

6IX

FK

180N

085

IXFD

280N

085-

9Y0.

005

IX9Y

15.8

1 x

14.3

162

3 x

563

12 m

il x

12IX

FN

280N

085

IXFD

80N

10Q

-8X

100

0.01

8IX

8X12

.19

x 7.

1948

0 x

283

15 m

il x

4IX

FH

80N

10Q

IXFD

170N

10-9

X0.

011

IX9X

14.2

0 x

10.6

055

9 x

417

15 m

il x

6IX

FK

170N

10IX

FD23

0N10

-9Y

0.00

7IX

9Y15

.81

x 14

.31

623

x 56

312

mil

x 12

IXF

N23

0N10

IXFD

88N

20Q

-82

200

0.03

5IX

8212

.17

x 7.

1447

9 x

281

15 m

il x

4IX

FH

88N

20Q

IXFD

120N

20-9

X0.

020

IX9X

14.2

0 x

10.6

055

9 x

417

15 m

il x

6IX

FK

120N

20IX

FD18

0N20

-9Y

0.01

4IX

9Y15

.81

x 14

.31

623

x 56

312

mil

x 12

IXF

N18

0N20

IXFD

40N

30Q

-72

300

0.09

5IX

728.

89 x

7.1

635

0 x

282

15 m

il x

3IX

FH

40N

30Q

IXFD

52N

30Q

-82

0.07

5IX

8212

.17

x 7.

1447

9 x

281

15 m

il x

4IX

FH

52N

30Q

IXFD

73N

30Q

-8Y

0.05

0IX

8Y13

.97

x 9.

0255

0 x

355

12 m

il x

6IX

FK

73N

30Q

IXFD

90N

30-9

X0.

040

IX9X

14.2

0 x

10.6

055

9 x

417

15 m

il x

6IX

FK

90N

30IX

FD13

0N30

-9Y

0.02

8IX

9Y15

.81

x 14

.31

623

x 56

312

mil

x 12

IXF

N13

0N30

10©

200

8 IX

YS

All

right

s re

serv

ed

HiP

erFE

TTM P

ower

MO

SFE

T

This

tab

le li

stgs

act

ive

chip

s on

ly.

Ple

ase

cont

act

fact

ory

for

olde

r de

sign

s.

HiP

erFE

TTMs

offe

r ext

ende

d dv

/dt r

ugge

dnes

s

The

HiP

erFE

TTM s

erie

s of

Pow

er M

OS

FETs

hav

e an

exte

nded

stre

ss c

apab

ility

in a

pplic

atio

ns w

here

the

intri

nsic

"fre

e-w

heel

ing

diod

e" is

use

d. B

oth

stat

ican

d dy

nam

ic d

v/dt

with

stan

d ca

pabi

lity

have

bee

nim

prov

ed to

offe

r a

sign

ifica

nt m

argi

n of

saf

ety

inhi

gh s

tress

con

ditio

ns fo

und

in m

any

type

s of

indu

ctiv

e lo

ad s

witc

hing

app

licat

ions

.

Type

VD

SS

RD

S(O

N)

Chi

pC

hip

Siz

eS

ourc

e -

Equ

ival

ent

max

.m

ax.

type

dim

ensi

ons

bond

wir

ede

vice

reco

mm

ende

dda

ta s

heet

VΩ

mm

mils

IXFD

40N

50Q

-82

500

0.15

0IX

8212

.17

x 7.

1447

9 x

281

15 m

il x

4IX

FH

40N

50Q

IXFD

40N

50Q

2-84

0.15

0IX

8412

.17

x 7.

1447

9 x

281

15 m

il x

4IX

FH

40N

50Q

2IX

FD48

N50

Q-8

Y0.

110

IX8Y

13.9

7 x

9.02

550

x 35

512

mil

x 6

IXF

K48

N50

QIX

FD55

N50

-9X

0.10

0IX

9X14

.20

x 10

.60

559

x 41

715

mil

x 6

IXF

K55

N50

IXFD

66N

50Q

2-94

0.08

5IX

9414

.20

x 10

.60

559

x 41

715

mil

x 6

IXF

K66

N50

Q2

IXFD

80N

50Q

2-95

0.07

0IX

9515

.81

x 12

.50

623

x 49

215

mil

x 6

IXF

B80

N50

Q2

IXFD

80N

50-9

Y0.

060

IX9Y

15.8

1 x

14.3

162

3 x

563

12 m

il x

12IX

FN

80N

50IX

FD23

N60

Q-7

260

00.

350

IX72

8.89

x 7

.16

350

x 28

215

mil

x 3

IXF

H23

N60

QIX

FD30

N60

Q-8

20.

250

IX82

12.1

7 x

7.14

479

x 28

115

mil

x 4

IXF

H30

N60

QIX

FD36

N60

Q-8

Y0.

170

IX8Y

13.9

7 x

9.02

550

x 35

512

mil

x 6

IXF

K36

N60

QIX

FD44

N60

-9X

0.14

0IX

9X14

.20

x 10

.60

559

x 41

715

mil

x 6

IXF

K44

N60

IXFD

52N

60Q

2-94

0.13

0IX

9414

.20

x 10

.60

559

x 41

715

mil

x 6

IXF

K52

N60

Q2

IXFD

70N

60Q

2-95

0.09

0IX

9515

.81

x 12

.50

623

x 49

215

mil

x 6

IXF

B70

N60

Q2

IXFD

60N

60-9

Y0.

090

IX9Y

15.8

1 x

14.3

162

3 x

563

12 m

il x

12IX

FN

60N

60

11©

200

8 IX

YS

All

right

s re

serv

ed

HiP

erFE

TTM P

ower

MO

SFE

T

This

tab

le li

stgs

act

ive

chip

s on

ly.

Ple

ase

cont

act

fact

ory

for

olde

r de

sign

s.

‘Q -

Cla

ss’ a

nd ‘Q

2 - C

lass

’ H

iPer

FETTM

MO

SFE

Tsfo

r Low

er G

ate

Cha

rge

and

Fast

er S

witc

hing

New

‘Q -

cla

ss‘ H

iPer

FET

MO

SFE

Ts (

iden

tifie

d by

the

suffi

x le

tter

Q)

are

the

resu

lt of

a r

evol

utio

nary

new

chi

p de

sign

, whi

ch d

ecre

ases

the

MO

SFE

T‘s

tota

l gat

e ch

arge

Qg

and

the

Mill

er c

apac

itanc

eC

rss,

whi

le m

aint

aini

ng t

he r

ugge

dnes

s an

d fa

stsw

itchi

ng in

trins

ic d

iode

of

the

com

pany

‘s c

urre

ntH

iPer

FET

prod

uct l

ine.

The

res

ult i

s a

MO

SFE

T w

ithdr

amat

ical

ly i

mpr

oved

sw

itchi

ng e

ffici

enci

es a

ndth

us e

nabl

ing

high

er f

requ

ency

ope

ratio

n an

dsm

alle

r po

wer

sup

plie

s.

The

new

er ‘Q

2-C

lass

’ lin

e co

mbi

nes

the

low

gat

ech

arge

adv

anta

ges

of Q

-Cla

ss w

ith a

dou

ble-

met

alco

nstru

ctio

n re

sul-t

ing

in a

new

gen

erat

ion

ofM

OS

FETs

with

an

intri

nsic

gat

e re

sist

ance

an

orde

rof

mag

nitu

de lo

wer

tha

n co

nven

tiona

l MO

SFE

Ts.

The

resu

lting

red

uctio

n in

sw

itchi

ng lo

sses

allo

ws

larg

e M

OS

FETs

to o

pera

te u

p sa

tisfa

ctor

ily u

p to

the

mul

ti-m

egah

ertz

reg

ion.

Type

VD

SS

RD

S(O

N)

Chi

pC

hip

Siz

eS

ourc

e -

Equ

ival

ent

max

.m

ax.

type

dim

ensi

ons

bond

wir

ede

vice

reco

mm

ende

dda

ta s

heet

VΩ

mm

mils

IXFD

23N

80Q

-82

800

0.44

0IX

8212

.17

x 7.

1447

9 x

281

15 m

il x

4IX

FH

23N

80Q

IXFD

27N

80Q

-8Y

0.35

0IX

8Y13

.97

x 9.

0255

0 x

355

12 m

il x

6IX

FK

27N

80Q

IXFD

34N

80-9

X0.

250

IX9X

14.2

0 x

10.6

055

9 x

417

15 m

il x

6IX

FK

34N

80IX

FD38

N80

Q2-

940.

250

IX94

14.2

0 x

10.6

055

9 x

417

15 m

il x

6IX

FK

38N

80Q

2IX

FD50

N80

Q2-

950.

170

IX95

15.8

1 x

12.5

062

3 x

492

15 m

il x

6IX

FB

50N

80Q

2IX

FD44

N80

-9Y

0.16

0IX

9Y15

.81

x 14

.31

623

x 56

312

mil

x 12

IXF

N44

N80

IXFD

24N

90Q

-8Y

900

0.50

0IX

8Y13

.97

x 9.

0255

0 x

355

12 m

il x

6IX

FK

24N

90Q

IXFD

26N

90-9

X0.

330

IX9X

14.2

0 x

10.6

055

9 x

417

15 m

il x

6IX

FK

26N

90IX

FD39

N90

-9Y

0.22

0IX

9Y15

.81

x 14

.31

623

x 56

312

mil

x 12

IXF

N39

N90

IXFD

6N10

0Q-5

U10

002.

000

IX5U

6.81

x 6

.74

268

x 26

510

mil

x 2

IXF

H6N

100Q

IXFD

10N

100-

7Y1.

200

IX7Y

8.89

x 7

.16

350

x 28

215

mil

x 3

IXF

H10

N10

0IX

FD14

N10

0Q2-

7F1.

000

IX7F

8.89

x 7

.16

350

x 28

212

mil

x 4

IXF

H14

N10

0Q2

IXFD

14N

100-

8X0.

750

IX8X

12.1

9 x

7.19

480

x 28

315

mil

x 4

IXF

H14

N10

0IX

FD21

N10

0Q-8

Y0.

520

IX8Y

13.9

7 x

9.02

550

x 35

512

mil

x 6

IXF

K21

N10

0QIX

FD21

N10

0F-8

F0.

520

IX8F

13.9

7 x

9.02

550

x 35

512

mil

x 6

IXF

K21

N10

0FIX

FD24

N10

0-9X

0.42

0IX

9X14

.20

x 10

.60

559

x 41

715

mil

x 6

IXF

K24

N10

0IX

FD24

N10

0F-9

F0.

420

IX9F

14.2

0 x

10.6

055

9 x

417

15 m

il x

6IX

FK

24N

100F

IXFD

38N

100Q

2-95

0.28

0IX

9515

.81

x 12

.50

623

x 49

215

mil

x 6

IXF

B38

N10

0Q2

IXFD

36N

100-

9Y0.

270

IX9Y

15.8

1 x

14.3

162

3 x

563

12 m

il x

12IX

FN

36N

100

IXFD

3N12

0-4U

1200

4.50

0IX

4U5.

77 x

4.9

622

7 x

195

12 m

il x

1IX

FP

3N12

0

12©

200

8 IX

YS

All

right

s re

serv

ed

Pol

arH

TTM M

OS

FET

This

tab

le li

stgs

act

ive

chip

s on

ly.

Ple

ase

cont

act

fact

ory

for

olde

r de

sign

s.

Pol

arH

T TM

MO

SFE

Ts fo

r ver

y lo

w R

DS

(on)

Pol

arH

T M

OS

FETs

feat

ure

a pr

oprie

tary

cel

l des

ign

and

proc

essi

ng th

at h

as r

esul

ted

in a

MO

SFE

T w

itha

30%

red

uctio

n in

RD

S(o

n) p

er u

nit a

rea

alon

g w

ith a

decr

ease

in g

ate

char

ge. I

XY

S h

as a

lso

redu

ced

the

waf

er t

hick

ness

, w

hich

sub

stan

tially

red

uces

ther

mal

res

ista

nce.

The

com

bina

tion

of lo

wer

RD

S(o

n),

low

er g

ate

char

ge a

nd h

ighe

r po

wer

dis

sipa

tion

capa

bilit

y ha

s re

sulte

d in

a n

ew fa

mily

of M

OS

FETs

,w

hich

will

incr

ease

the

cost

effe

ctiv

enes

s in

SM

PS

appl

icat

ions

. IX

YS

will

als

o in

trodu

ce H

iPer

FET

vers

ions

in w

hich

the

t rr o

f the

bod

y di

ode

is r

educ

edto

mak

e th

em s

uita

ble

for

phas

e-sh

ift b

ridge

s, m

otor

cont

rol

and

Uni

nter

rupt

ible

Pow

er S

uppl

yap

plic

atio

ns.

Type

VD

SS

RD

S(O

N)

Chi

pC

hip

Siz

eS

ourc

e -

Equ

ival

ent

max

.m

ax.

type

dim

ensi

ons

bond

wir

ede

vice

reco

mm

ende

dda

ta s

heet

Vm

Ω m

mm

ils

IXTD

110N

055P

-5S

5521

IX5S

6.20

x 5

.20

244

x 20

512

mil

x 3

IXTP

110

N05

5PIX

TD75

N10

P-5

S10

031

IX5S

6.20

x 5

.20

244

x 20

512

mil

x 3

IXTP

75N

10P

IXTD

110N

10P

-6S

22IX

6S6.

86 x

6.8

627

0 x

270

12 m

il x

4IX

TQ 1

10N

10P

IXTD

140N

10P

-7S

20IX

7S8.

9 x

7.14

351

x 28

115

mil

x 4

IXTQ

140

N10

PIX

TD17

0N10

P-8

S15

IX8S

11.1

2 x

7.14

438

x 28

112

mil

x 6

IXTQ

170

N10

PIX

TD20

0N10

P-8

815

IX88

13.3

4 x

7.14

525

x 28

115

mil

x 6

IXTK

200

N10

PIX

TD62

N15

P-5

S15

050

IX5S

6.20

x 5

.20

244

x 20

512

mil

x 3

IXTP

62N

15P

IXTD

96N

15P

-6S

30IX

6S6.

86 x

6.8

627

0 x

270

12 m

il x

4IX

TQ 9

6N15

PIX

TD12

0N15

P-7

S23

IX7S

8.9

x 7.

1435

1 x

281

15 m

il x

4IX

TQ 1

20N

15P

IXTD

150N

15P

-8S

21IX

8S11

.12

x 7.

1443

8 x

281

12 m

il x

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100P

-3C

4.8

IX3C

4.39

x 3

.617

3 x

142

12 m

il x

2IX

TP

3N10

0PIX

TD06

N12

0P-1

A12

0032

IX1A

2.29

x 2

.29

90 x

90

10 m

il x

1IX

TP

06N

120P

IXTD

08N

120P

-1C

25IX

1C2.

54 x

2.5

410

0 x

100

10 m

il x

1IX

TP

08N

120P

IXTD

1N12

0P-2

A20

IX2A

2.79

x 2

.79

110

x 11

010

mil

x 1

IXT

P1N

120P

IXTD

1R4N

120P

-2C

13IX

2C3.

89 x

2.7

915

3 x

110

12 m

il x

1IX

TP

1R4N

120P

IXTD

2R4N

120P

-3C

7.5

IX3C

4.39

x 3

.617

3 x

142

12 m

il x

2IX

TP

2R4N

120P

16©

200

8 IX

YS

All

right

s re

serv

ed

N-C

hann

el D

eple

tion

Mod

e M

OS

FET

P-C

hann

el P

ower

MO

SFE

T

Dep

letio

n M

ode

MO

SFE

Ts

Dep

letio

n m

ode

MO

SFE

Ts,

unlik

e th

e re

gula

ren

hanc

emen

t typ

e M

OS

FETs

, req

uire

s a

nega

tive

gate

bia

s to

turn

it o

ff. C

onse

quen

tly th

ey r

emai

non

at o

r ab

ove

zero

gat

e bi

as v

olta

ge b

utot

herw

ise

have

sim

ilar

MO

SFE

T ch

arac

teris

tics.

Thei

r R

ds(o

n) a

nd b

reak

dow

n vo

ltage

hav

e a

posi

tive

tem

pera

ture

coe

ffici

ent,

incr

easi

ng t

hega

te b

ias

volta

ge in

crea

ses

the

gate

cha

nnel

cond

uctiv

ity a

nd s

o de

crea

ses

Rds

(on)

to

som

eex

tent

and

ther

e is

a u

sabl

e in

trins

ic d

iode

. IX

YS

Cor

pora

tion’

s IX

TP01

N10

0D is

a d

eple

tion

mod

eM

OS

FET

rate

d at

VD

SS

= 1

000

Vol

ts a

nd I D

= 1

00m

A a

nd it

s R

DS

(on)

= 1

10 O

hms

at V

GS

= 0

Vol

t. Th

eot

her

depl

etio

n m

ode

MO

SFE

T, IX

TP02

N05

D, i

sra

ted

at V

DS

S =

500

Vol

ts, I

D =

200

mA

, whi

le it

sR

DS

(on)

= 3

0 O

hms.

The

min

imum

req

uire

d ga

te b

ias

to tu

rn th

em o

ff is

–5

Vol

ts. T

hey

are

both

hou

sed

in T

O-2

20 p

acka

ge a

nd c

an d

issi

pate

25

Wat

ts a

tT C

= 2

50 C.

Ther

e ar

e m

any

appl

icat

ions

in w

hich

IXTP

01N

100D

and

IX

TP02

N05

D c

an b

e us

ed:

curr

ent

regu

lato

rs,

off-l

ine

linea

r re

gula

tors

, in

put

trans

ient

vol

tage

sup

pres

sors

, in

put

curr

ent

inru

sh

Type

VD

SS

RD

S(O

N)

Chi

pC

hip

Siz

eS

ourc

e -

Equ

ival

ent

max

.m

ax.

type

dim

ensi

ons

bond

wir

ede

vice

reco

mm

ende

dda

ta s

heet

VΩ

mm

mils

IXTD

02N

50D

-1M

500

30IX

1M1.

96 x

1.6

877

x 6

63

mil

x 1

IXT

P02

N50

DIX

TD01

N10

0D-1

M10

0011

0IX

1M1.

96 x

1.6

877

x 6

63

mil

x 1

IXT

P01

N10

0D

Type

VD

SS

RD

S(O

N)

Chi

pC

hip

Siz

eS

ourc

e -

Equ

ival

ent

max

.m

ax.

type

dim

ensi

ons

bond

wir

ede

vice

reco

mm

ende

dda

ta s

heet

VΩ

mm

mils

IXT

D36

P10

-5B

100

0.08

IX5B

6.59

x 6

.59

259

x 25

912

mil

x 3

IXT

H36

P10

IXT

D50

P10

-7B

0.06

IX7B

8.84

x 7

.18

348

x 28

315

mil

x 3

IXT

H50

P10

IXT

D16

P20

-5B

200

0.22

IX5B

6.59

x 6

.59

259

x 25

912

mil

x 3

IXT

H16

P20

IXT

D24

P20

-7B

0.16

IX7B

8.84

x 7

.18

348

x 28

315

mil

x 3

IXT

H24

P20

IXT

D8P

50-5

B50

01.

20IX

5B6.

59 x

6.5

925

9 x

259

12 m

il x

3IX

TH

7P50

IXT

D11

P50

-7B

0.75

IX7B

8.84

x 7

.18

348

x 28

315

mil

x 3

IXT

H11

P50

IXT

D10

P60

-7B

1.05

IX7B

8.84

x 7

.18

348

x 28

315

mil

x 3

IXT

H10

P60

17IXYS reserves the right to change limits, test conditions and dimensions

IX11

S

G

0.012 [0.29]

0.01

6[0

.41]

SQ

0.043 [1.10]

0.075 [1.91]

0.07

5[1

.91]

IX1M

IX1J

S

G

0.012 [0.29]

0.01

6[0

.41]

SQ

0.054 [1.38]

0.09

0[2

.29]

0.090 [2.29]

0.05

4[1

.38]

IX11

IX1J

Dimensions in inch and [mm] (1" = 25.4 mm)

IX1A IX1C

IX2A

18 © 2008 IXYS All rights reserved

G

S

IX3J

0.013 [0.34]

0.02

5[0

.63]

0.047 [1.20]

0.142 [3.60]

0.024 [0.60]

0.095 [2.40]

0.09

5[2

.40]

0.14

2[3

.60]

IX3J

Dimensions in inch and [mm] (1" = 25.4 mm)

IX2X

IX2J

S

G

0.012 [0.29]

0.01

6[0

.41]

SQ

0.020 [0.51]

0.04

8[1

.23]

0.070 [1.78]

0.07

0[1

.78]

0.11

0[2

.79]

0.110 [2.79]

IX23

SG

0.012 [0.29]

0.02

4[0

.60] 0.020 [0.50]

0.046 [1.17]

0.01

0[0

.26]

0.099 [2.52]

0.090 [2.28]

0.07

5[1

.91]

0.11

0[2

.79]

0.153 [3.89]

IX23

IX2J IX2C

IX3C

19IXYS reserves the right to change limits, test conditions and dimensions

IX45 IX4Z

IX4X

S

S

GIX4J

0.013 [0.34]

0.164 [4.17]

0.197 [5.00]

0.19

7[5

.00]

0.16

4[4

.17]

0.02

4[0

.60]

SQ

0.128 [3.26]

IX3X

Dimensions in inch and [mm] (1" = 25.4 mm)

IX4J

IX4U

20 © 2008 IXYS All rights reserved

IX5Z IX5Y

IX5U IX5S

0.244 [6.20]

IX5J

G

S

S

0.04

1[1

.03]

0.013 [0.33]0.049 [1.25]

0.031 [0.77]

0.209 [5.30]

0.01

2[0

.30]

0.16

9[4

.30]

0.20

5[5

.20]

0.046 [1.18]

Dimensions in inch and [mm] (1" = 25.4 mm)

IX5B IX5J

21IXYS reserves the right to change limits, test conditions and dimensions

IX6S

Dimensions in inch and [mm] (1" = 25.4 mm)

0.24

8[6

.30]

0.248 [6.30]

IX63

G

S

S

0.206 [5.23] SQ

0.014 [0.35]

0.032 [0.80] SQ

G S

IX62A

0.014 [0.35]

0.04

4[1

.12]

0.035 [0.88]

0.06

0[1

.51]

0.08

3[2

.10]

0.16

9[4

.30]

0.129 [3.28]

0.158 [4.01]

0.086 [2.18]

0.086 [2.19]

0.341 [8.65]

0.25

7[6

.52]

IX6J

IX62 IX63

0.27

0[6

.86]

0.270 [6.86]

G

S

S

IX6J

0.014 [0.34]

0.03

3[0

.84]

SQ

IX55 IX56

22 © 2008 IXYS All rights reserved

IX65

0.14

2[3

.60]

0.28

1[7

.15]

0.351 [8.91]

G

IX7JS

S

0.03

9[1

.00]

0.033 [0.84]

0.013 [0.34]

IX7B

0.25

7[6

.52]

0.341 [8.65]

S

S

G

IX67A

0.014 [0.35]0.

039

[1.0

0]

0.032 [0.82]

0.306 [7.78]

0.12

6[3

.19]

0.22

3[5

.65]

Dimensions in inch and [mm] (1" = 25.4 mm)

IX67

IX7J

IX7F IX7S

23IXYS reserves the right to change limits, test conditions and dimensions

Dimensions in inch and [mm] (1" = 25.4 mm)

IX72

GS

IX7Y

S S

SS

0.016 [0.41]

0.119 [3.02]0.233 [5.91]

0.350 [8.89]

0.05

0[1

.27]

0.28

2[7

.16]

0.048 [1.21]

0.11

9[3

.02]

5X0.062 [ ±1.57]± IX7Y

IX8F

0.438 [11.13]

0.28

1[7

.15]

G

IX8J S

S

0.013 [0.33]

0.04

8[1

.22]

0.048 [1.22]

0.13

2[3

.36]

IX8J

IX76 IX75

24 © 2008 IXYS All rights reserved

IX82

IX84

Dimensions in inch and [mm] (1" = 25.4 mm)

IX8S IX8X

IX8Y

IX85

25IXYS reserves the right to change limits, test conditions and dimensions

Dimensions in inch and [mm] (1" = 25.4 mm)

IX9J

G

S

S

0.014 [0.35]

0.01

4[0

.35]

0.045 [1.14]

0.04

5[1

.14]

0.417 [10.60]0.

417

[10.

60]

IX9J IX9F

IX88

IX9X IX9Y

IX86

26 © 2008 IXYS All rights reserved

Dimensions in inch and [mm] (1" = 25.4 mm)

IX93

0.559 [14.20]

0.41

7[1

0.60

]

0.013 [0.32]0.047 [1.20] SQ

0.01

3[0

.32]

0.01

6[0

.40]

0.099 [2.52]

0.115 [2.92] 0.131 [3.31] 0.134 [3.40]

0.12

4[3

.15]

0.19

3[4

.90]

G

S

S

IX93A

G

IX94

IX95

IX99

IX97

27©

200

8 IX

YS

All

right

s re

serv

ed

Rec

tifie

r Dio

des

Type

VR

RM

I RT V

JMI F(

AV)

MR

thJC

①V F

I FSM

Rev

erse

Rec

over

yV

RR

Mre

ct. d

=0.5

T VJ =

@I F

I RM

@I F

@-d

i/dt

TV

JMT

C=1

00°C

typ.

25°C

125°

C25

°C;

VR=1

00V

Vty

p. m

A°C

AK

/WV

VA

AA

AA

/µs

DW

N5

800

-0.

715

012

2.80

1.14

1.05

714

0tb

dtb

dtb

dD

WP

512

000.

712

2.80

1.14

1.05

714

0tb

dtb

dtb

dD

WN

212

00 -

0.7

122.

801.

131.

057

150

tbd

tbd

tbd

DW

N9

1800

1.0

201.

801.

301.

2630

300

tbd

tbd

tbd

DW

N17

1.5

311.

101.

361.

3550

320

tbd

tbd

tbd

DW

P17

1.5

311.

101.

391.

3750

320

tbd

tbd

tbd

DW

N21

3.0

420.

901.

351.

3380

500

tbd

tbd

tbd

DW

P21

3.0

410.

901.

371.

3680

500

tbd

tbd

tbd

DW

N35

1.5

590.

651.

251.

2080

630

1150

0.64

DW

P35

1.5

580.

651.

251.

2280

630

1150

0.64

DW

N50

2.0

780.

501.

331.

3115

090

012

501

DW

P50

2.0

760.

501.

341.

3315

090

012

501

DW

N75

2.0

115

0.33

1.27

1.23

200

1500

2450

3D

WP

752.

011

80.

351.

281.

2520

015

0024

503

DW

N11

03.

525

30.

161.

181.

1230

032

0045

506

DW

P11

03.

525

30.

161.

191.

1230

032

0045

506

DW

N34

015

.041

60.

100.

931.

0930

059

0023

530

050

DW

N10

816

00 -

3.5

253

0.16

1.19

1.12

300

3200

4550

6D

WN

347

2200

20.0

788

0.05

1.10

1.01

600

1050

027

540

050

①

Mou

nted

on

DC

B

28©

200

8 IX

YS

All

right

s re

serv

ed

Type

Chi

psD

imen

sion

sSi

-pe

rth

ickn

.W

afer

AB

mm

mm

mm

DW

N5

•11

234.

402.

100.

265

DW

P5

•11

234.

40 2

.10

0.26

5D

WN

2•

•12

042.

952.

950.

265

DW

N9

••

684

3.90

3.90

0.26

5D

WN

17•

•51

84.

454.

450.

265

DW

P17

••

518

4.45

4.45

0.26

5D

WN

21•

•34

65.

405.

400.

265

DW

P21

••

346

5.40

5.40

0.26

5D

WN

35•

•25

96.

206.

200.

265

DW

P35

••

259

6.20

6.20

0.26

5D

WN

50•

•19

87.

107.

100.

265

DW

P50

••

198

7.10

7.10

0.26

5D

WN

75•

•12

58.

708.

700.

265

DW

P75

••

125

8.70

8.70

0.26

5D

WN

110

••

5812

.30

12.3

00.

265

DW

P11

0•

•58

12.3

012

.30

0.26

5D

WN

340

•32

16.2

016

.20

0.26

5D

WN

108

••

5812

.30

12.3

00.

315

DW

N34

7•

1625

.30

18.5

00.

315

Tole

ranc

e-0

.1-0

.1±5

%

solderable

bonderable

DW

N

DW

P

Rec

tifie

r Dio

des

29©

200

8 IX

YS

All

right

s re

serv

ed

Type

VR

RM

I RT V

JMI F(

AV)

MR

thJC

①V F

I FSM

Rev

erse

Rec

over

y0.

8xV

RR

Mre

ct. d

=0.5

T VJ =

@I F

I RM

@I F

@-d

i/dt

t rr@

I F@

-di/d

t12

5°C

T C=1

00°C

typ.

25°C

@25

°C;

VR=1

00V

VR=3

0VV

mA

°CA

K/W

VV

°CA

AA

AA

/µs

nsA

A/µ

s

DW

EP

27-0

220

05.

015

054

0.9

1.09

0.84

150

3030

04

5010

035

110

0D

WE

P37

-02

11.0

910.

81.

030.

8715

010

047

54

100

100

351

200

DW

EP

77-0

220

.024

40.

40.

980.

8115

012

012

007.

510

020

0tb

d1

350

DW

EP

8-06

600

1.5

tbd

2.5

1.65

1.48

150

850

512

100

351

50D

WE

P12

-06

1.5

82.

51.

451.

3115

08

100

525

100

351

50D

WE

P15

-06

3.0

121.

61.

651.

4815

016

100

525

100

351

50D

WE

P23

-06

7.0

300.

91.

531.

3315

030

250

550

100

351

100

DW

EP

25-0

67.

030

0.9

1.53

1.38

150

4330

05

5010

035

110

0D

WE

P35

-06

14.0

600.

81.

731.

4815

070

550

510

010

035

120

0D

WE

P55

-06

17.0

800.

71.

581.

3812

575

600

510

010

035

120

0D

WE

P75

-06

20.0

162

0.4

1.31

1.12

125

7510

0020

8020

035

135

0D

WE

P3-

1010

002.

0tb

d2.

52.

652.

0915

06

407

1210

035

150

DW

EP

10-1

04.

012

1.6

2.65

2.09

150

12 7

55

2510

035

150

DW

EP

18-1

07.

030

0.9

2.43

2.04

150

3020

07

5010

035

110

0D

WE

P20

-10

7.0

300.

92.

351.

9915

036

200

750

100

351

100

DW

EP

30-1

014

.060

0.8

2.24

1.79

150

6050

07

100

100

351

200

DW

EP

50-1

017

.082

0.7

2.12

1.68

125

5050

06.

150

120

351

200

DW

EP

70-1

020

.012

90.

41.

891.

5712

575

800

1480

200

351

350

DW

EP

6-12

1200

2.0

tbd

2.5

2.55

2.19

150

580

710

100

401

50D

WE

P9-

124.

012

1.6

2.55

2.19

150

1275

525

100

501

50D

WE

P17

-12

7.0

300.

92.

602.

1915

030

200

750

100

401

100

DW

EP

19-1

27.

030

0.9

2.50

2.19

150

3020

07

5010

040

110

0D

WE

P29

-12

14.0

600.

82.

351.

9415

060

500

710

010

040

120

0D

WE

P49

-12

17.0

770.

72.

191.

8912

550

500

8.6

5010

040

120

0D

WE

P69

-12

20.0

123

0.4

1.77

1.54

125

7580

020

7520

040

135

0

①

Mou

nted

on

DC

B

FRE

D -

Fas

t Rec

over

y E

pita

xial

Dio

des

30©

200

8 IX

YS

All

right

s re

serv

ed

Type

Chi

psD

imen

sion

sSi

-pe

rth

ickn

.W

afer

AB

mm

mm

mm

DW

EP

27-0

2•

518

4.45

4.45

0.35

DW

EP

37-0

2•

257

6.20

6.20

0.35

DW

EP

77-0

2•

•15

18.

917.

220.

35D

WE

P8-

06•

1612

3.60

1.80

0.35

DW

EP

12-0

6•

•18

512.

402.

400.

35D

WE

P15

-06

••

990

3.25

3.25

0.35

DW

EP

23-0

6•

•53

15.

503.

500.

35D

WE

P25

-06

••

518

4.45

4.45

0.35

DW

EP

35-0

6•

•25

76.

206.

200.

35D

WE

P55

-06

•23

08.

654.

950.

35D

WE

P75

-06

••

151

8.91

7.22

0.35

DW

EP

3-10

•16

123.

601.

800.

35D

WE

P10

-10

•99

03.

253.

250.

35D

WE

P18

-10

•53

15.

503.

500.

35D

WE

P20

-10

•51

84.

454.

450.

35D

WE

P30

-10

••

257

6.20

6.20

0.35

DW

EP

50-1

0•

230

8.65

4.95

0.35

DW

EP

70-1

0•

151

8.91

7.22

0.35

DW

EP

6-12

•18

512.

402.

400.

35D

WE

P9-

12•

•99

03.

253.

250.

35D

WE

P17

-12

••

531

5.50

3.50

0.35

DW

EP

19-1

2•

•51

84.

454.

450.

35D

WE

P29

-12

••

257

6.20

6.20

0.35

DW

EP

49-1

2•

•23

08.

654.

950.

35D

WE

P69

-12

••

151

8.91

7.22

0.35

Tole

ranc

e-0

.1-0

.1±5

%

solderable

bonderable

FRE

D -

Fas

t Rec

over

y E

pita

xial

Dio

des

31©

200

8 IX

YS

All

right

s re

serv

ed

Type

Dim

ensi

ons

Num

ber

SiA

Bof

Chi

psth

ickn

ess

per

Waf

er

mm

mm

6 "

mm

DM

LP04

-03

•2.

12.

136

750.

25D

MLP

06-0

3•

2.4

2.4

2700

0.25

DM

LP10

-03

•3.

33.

314

300.

25D

MLP

15-0

3•

3.9

3.9

1020

0.25

DM

LP20

-03

•4.

454.

4578

00.

25D

MLP

04-0

4•

2.1

2.1

3675

0.25

DM

LP06

-04

•2.

42.

427

000.

25D

MLP

10-0

4•

3.3

3.3

1430

0.25

DM

LP15

-04

•3.

93.

910

200.

25D

MLP

20-0

4•

4.45

4.45

780

0.25

solderable

bondable

FRE

D -

Fast

Rec

over

y E

pita

xial

Dio

des

with

met

al fi

eld

plat

e

Type

VR

RM

I r R

TI R

V FV F

@ I F

rate

dI FS

MR

ever

seI F

t rrdi

/dt

Sta

tus

at 1

50°C

at R

Tat

150

°Ccu

rren

tR

ecov

ery

I RM

VuA

uAV

VA

AA

Ans

A/u

s

DM

LP04

-03

300

115

01.

250.

9510

100

310

3520

0A

vaila

ble

DM

LP06

-03

120

01.

31.

0520

150

320

3520

0A

vaila

ble

DM

LP10

-03

125

01.

280.

9530

300

330

3520

0A

vaila

ble

DM

LP15

-03

130

01.

250.

9540

400

340

3520

0A

vaila

ble

DM

LP20

-03

135

01.

280.

9560

550

360

3520

0A

vaila

ble

DM

LP04

-04

400

125

01.

351

1010

04

1045

200

Ava

ilabl

eD

MLP

06-0

41

300

1.35

1.09

1515

03.

520

4520

0A

vaila

ble

DM

LP10

-04

135

01.

351

3030

04

3045

200

Ava

ilabl

eD

MLP

15-0

41

400

1.35

140

400

440

4520

0A

vaila

ble

DM

LP20

-04

150

01.

351

6055

04

6045

200

Ava

ilabl

eD

MLP

23-0

660

0tb

dtb

dtb

dtb

d30

tbd

tbd

30tb

dtb

dD

evel

opm

ent

32©

200

8 IX

YS

All

right

s re

serv

ed

Type

VR

RM

I RT V

JMI F(

AV)

MR

thJC

①V F

I FSM

Rev

erse

Rec

over

yV

RR

Mre

ct. d

=0.5

T VJ =

@I F

I RM

@I F

@-d

i/dt

t rr@

I F@

-di/d

tT

VJM

TC=1

00°C

typ.

25°C

150°

C25

°C;

VR=1

00V

VR=3

0VV

mA

°CA

K/W

VV

AA

AA

A/µ

sty

p. n

sA

A/µ

s

DW

LP4-

0220

00.

2015

014

2.80

1.21

0.88

580

1.2

1010

025

150

DW

LP15

-02

0.50

291.

600.

990.

8212

140

2.4

2510

025

110

0D

WLP

15-0

2B0.

5025

1.60

1.13

0.84

1214

01.

125

100

251

100

DW

LP25

-02

0.20

460.

901.

100.

8530

325

2.0

5010

025

120

0D

WLP

4-03

300

0.20

132.

801.

631.

075

401.

410

100

301

50D

WLP

8-03

0.25

152.

501.

451.

016

601.

012

100

301

50D

WLP

15-0

30.

5025

1.60

1.44

1.02

1211

01.

425

100

301

100

DW

LP15

-03A

0.50

291.

601.

260.

9312

110

1.4

2510

030

110

0D

WLP

23-0

31.

0051

0.90

1.19

0.84

3030

03.

050

100

301

200

DW

LP23

-03A

1.00

410.

901.

491.

0730

300

1.9

5010

025

120

0D

WLP

55-0

32.

5072

0.65

1.42

0.99

6060

02.

813

010

030

130

0D

WLP

75-0

34.

0011

70.

401.

430.

9510

010

003.

320

010

030

140

0D

WLP

8-04

400

0.25

142.

501.

400.

976

601.

412

100

301

50D

WLP

15-0

40.

5024

1.60

1.40

0.98

1211

02.

525

100

301

100

DW

LP23

-04

1.00

460.

901.

431.

0630

300

2.5

5010

030

120

0D

WLP

55-0

42.

5067

0.65

1.38

0.99

6060

03.

513

010

030

130

0D

WLP

75-0

44.

0011

70.

401.

391.

0310

010

004.

020

010

030

140

0D

WLP

150-

048.

5014

80.

351.

381.

1230

012

009.

520

010

030

180

0D

WLP

4-06

600

0.20

112.

801.

971.

285

401.

810

100

301

50D

WLP

8-06

A0.

2512

2.50

1.75

1.22

650

2.6

1210

035

150

DW

LP8-

06B

0.25

112.

502.

341.

536

501.

412

100

301

50D

WLP

15-0

6A0.

5021

1.60

1.87

1.23

1211

02.

925

100

351

100

DW

LP15

-06B

0.50

161.

602.

381.

4412

110

1.5

2510

035

110

0D

WLP

23-0

6A1.

0040

0.90

1.54

1.17

3025

03.

550

100

351

200

DW

LP23

-06B

2.00

300.

902.

451.

5330

250

2.0

5010

030

120

0D

WLP

55-0

62.

5062

0.65

1.92

1.23

6060

04.

013

010

035

130

0D

WLP

75-0

64.

0099

0.40

1.93

1.24

100

1000

4.5

200

100

351

400

DW

LP1-

1212

000.

20tb

d25

.02.

141.

691

202.

31

100

tbd

tbd

tbd

DW

LP8-

120.

259

2.50

2.61

1.65

640

5.0

1210

040

150

DW

LP15

-12

0.50

141.

602.

451.

6812

905.

725

100

401

100

DW

LP23

-12

1.00

290.

902.

681.

7130

200

6.7

5010

040

120

0D

WLP

55-1

22.

5048

0.65

2.54

1.59

6050

07.

013

010

040

130

0D

WLP

75-1

24.

0078

0.40

2.56

1.71

100

800

7.4

200

100

401

400

①

Mou

nted

on

DC

B

Low

Lea

kage

Fas

t Rec

over

y E

pita

xial

Dio

des

33©

200

8 IX

YS

All

right

s re

serv

ed

Type

Chi

psD

imen

sion

sSi

-pe

rth

ickn

.W

afer

AB

mm

mm

mm

DW

LP4-

02•

1960

3.00

1.80

0.37

DW

LP15

-02

•99

03.

253.

250.

37D

WLP

15-0

2B•

990

3.25

3.25

0.37

DW

LP25

-02

•51

84.

454.

450.

37D

WLP

4-03

•19

603.

001.

800.

37D

WLP

8-03

•16

123.

601.

800.

37D

WLP

15-0

3•

990

3.25

3.25

0.37

DW

LP15

-03A

•99

03.

253.

250.

37D

WLP

23-0

3•

531

5.50

3.50

0.37

DW

LP23

-03A

•53

15.

503.

500.

37D

WLP

55-0

3•

•23

08.

654.

950.

37D

WLP

75-0

3•

151

8.91

7.22

0.37

DW

LP8-

04•

1612

3.60

1.80

0.38

DW

LP15

-04

•99

03.

253.

250.

38D

WLP

23-0

4•

531

5.50

3.50

0.38

DW

LP55

-04

••

230

8.65

4.95

0.38

DW

LP75

-04

••

151

8.91

7.22

0.38

DW

LP15

0-04

••

7413

.00

9.77

0.38

DW

LP4-

06•

1960

3.00

1.80

0.40

DW

LP8-

06A

•16

123.

601.

800.

40D

WLP

8-06

B•

1612

3.60

1.80

0.40

DW

LP15

-06A

•99

03.

253.

250.

40D

WLP

15-0

6B•

990

3.25

3.25

0.40

DW

LP23

-06A

•53

15.

503.

500.

40D

WLP

23-0

6B•

531

5.50

3.50

0.40

DW

LP55

-06

••

230

8.65

4.95

0.40

DW

LP75

-06

••

151

8.91

7.22

0.40

DW

LP1-

12•

•45

451.

521.

520.

46D

WLP

8-12

•16

123.

601.

800.

46D

WLP

15-1

2•

990

3.25

3.25

0.46

DW

LP23

-12

•53

15.

503.

500.

46D

WLP

55-1

2•

•23

08.

654.

950.

46D

WLP

75-1

2•

151

8.91

7.22

0.46

Tole

ranc

e-0

.1-0

.1±5

%

solderable

bonderable

Low

Lea

kage

Fas

t Rec

over

y E

pita

xial

Dio

des

34©

200

8 IX

YS

All

right

s re

serv

ed

SO

NIC

dio

des

with

gla

ss p

assi

vatio

n

Type

VR

RM

I r R

TI R

at 1

25°C

V FV F

@ I F

I FSM

Rev

erse

I Ft rr

di/d

tS

tatu

sat

RT

at 1

50°C

rate

d cu

rren

tR

ecov

ery

I RM

VuA

mA

VV

AA

AA

nsA

/us

DW

HP

0.5

slow

600

10.

12

2.22

1.2

tbd

0.25

0.5

5010

Ava

ilabl

eD

WH

P0.

51

0.1

3.5

3.55

1.2

tbd

0.2

0.5

3010

Ava

ilabl

eD

WH

P4

31

2.25

2.03

540

25

3510

0A

vaila

ble

DW

HP

105

1.5

2.38

2.14

1080

410

3520

0A

vaila

ble

DW

HP

1410

3.5

2.26

2.05

2015

08

2035

400

Ava

ilabl

eD

WH

P16

103.

52.

262.

0520

150

820

3540

0A

vaila

ble

DW

HP

2335

52.

392.

1630

200

1230

3560

0A

vaila

ble

DW

HP

56 s

low

608

1.54

1.43

6055

033

6060

1200

Ava

ilabl

eD

WH

P69

slo

w10

012

1.55

1.45

100

750

5510

060

2000

Ava

ilabl

eD

WH

P15

0 sl

ow15

020

1.55

1.45

150

1400

8215

060

3000

Ava

ilabl

eD

WH

P20

0 sl

ow25

030

1.55

1.44

250

1950

140

250

6050

00A

vaila

ble

DW

HP

5612

512

2.18

1.95

6040

024

6035

1200

Dev

elop

men

tD

WH

P69

200

202.

21.

9710

050

040

100

3520

00D

evel

opm

ent

DW

HP

150

325

302.

161.

9315

080

060

150

3530

00D

evel

opm

ent

DW

HP

200

500

452.

242.

0125

012

0010

025

035

5000

Dev

elop

men

tD

WH

P4

1200

101

2.45

2.18

535

4.2

575

150

Ava

ilabl

eD

WH

P10

51.

52.

582.

2810

658.

510

7535

0A

vaila

ble

DW

HP

1410

3.5

2.45

2.01

2013

519

2075

750

Ava

ilabl

eD

WH

P16

103.

52.

452.

220

135

1920

7575

0A

vaila

ble

DW

HP

2350

52.

592.

2930

180

2530

7510

00A

vaila

ble

DW

HP

56 s

low

608

2.04

1.76

6055

065

6065

1800

Ava

ilabl

eD

WH

P69

slo

w10

012

2.04

1.83

100

750

100

100

100

2500

Ava

ilabl

eD

WH

P15

0 sl

ow15

020

2.04

1.69

150

1400

150

150

150

4000

Ava

ilabl

eD

WH

P56

125

122.

422.

1460

430

5160

7525

00A

vaila

ble

DW

HP

6920

020

2.44

2.16

100

930

8310

075

4000

Ava

ilabl

eD

WH

P15

032

530

2.4

2.13

150

1130

115

150

125

3500

Ava

ilabl

eD

WH

P20

050

045

2.46

2.18

250

1800

170

250

125

6000

Ava

ilabl

eD

WH

P6

1600

-180

05

0.15

2.61

2.61

225

1.6

215

020

Ava

ilabl

eD

WH

P15

160.

352.

892.

8910

808.

510

150

100

Ava

ilabl

eD

WH

P25

421

2.65

2.65

2020

016

.520

150

200

Ava

ilabl

eD

WH

P55

952

2.73

2.73

4045

033

4015

040

0A

vaila

ble

DW

HP

6820

04

2.71

2.71

6065

050

6015

060

0A

vaila

ble

DW

HP

150

365

7.5

2.57

2.57

100

1100

125

150

150

1500

Ava

ilabl

eD

WH

P20

055

011

2.63

2.63

150

1600

200

250

150

2500

Ava

ilabl

eD

WH

P20

540

00-4

500

tbd

tbd

tbd

tbd

tbd

tbd

tbd

tbd

tbd

tbd

Dev

elop

men

t

35©

200

8 IX

YS

All

right

s re

serv

ed

SO

NIC

dio

des

with

gla

ss p

assi

vatio

n

Type

Dim

ensi

ons

Num

ber

SiA

Bof

Chi

psth

ickn

ess

per

Waf

er

mm

mm

mm

DW

HP

0.5-

06•

11

1077

70.

2D

WH

P4-

06•

3.6

1.8

1622

0.2

DW

HP

10-0

6•

2.95

2.95

1204

0.2

DW

HP

14-0

6•

4.8

3.3

657

0.2

DW

HP

16-0

6•

3.95

3.95

668

0.2

DW

HP

23-0

6•

5.5

3.5

532

0.2

DW

HP

56-0

6•

8.65

4.95

231

0.2

DW

HP

69-0

6•

8.91

7.22

152

0.2

DW

HP

150-

06•

11.4

9.4

880.

2D

WH

P20

0-06

•12

.412

.459

0.2

DW

HP

4-12

•3.

61.

816

220.

2D

WH

P10

-12

•2.

952.

9512

040.

2D

WH

P14

-12

•4.

83.

365

70.

2D

WH

P16

-12

•3.

953.

9566

80.

2D

WH

P23

-12

•5.

53.

553

20.

2D

WH

P56

-12

•8.

654.

9523

10.

2D

WH

P69

-12

•8.

917.

2215

20.

2D

WH

P15

0-12

•11

.49.

488

0.2

DW

HP

200-

12•

12.4

12.4

590.

2D

WH

P6-

16/1

8•

2.4

2.4

1841

0.26

5D

WH

P15

-16/

18•

3.25

3.25

988

0.26

5D

WH

P25

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18•

4.45

4.45

517

0.26

5D

WH

P55

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18•

8.65

4.95

231

0.26

5D

WH

P68

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18•

8.91

7.22

152

0.26

5D

WH

P15

0-16

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•11

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488

0.26

5D

WH

P20

0-16

/18

•12

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.459

0.26

5

DW

HP

205-

40/4

5•

14.3

14.3

450.

58•

- A

vaila

ble

on r

eque

st•

sold

er te

mpe

ratu

re b

elow

350

°C

solderable

bondable

36©

200

8 IX

YS

All

right

s re

serv

ed

GaA

s S

chot

tky

Dio

des

Type

VR

RM

T VJM

I F(A

V)M

Rth

JCV

F typ

I R ty

pC

jI FS

M

rect

. d=0

.5T V

J =@

I F@

VR

RM

0.5

• VR

RM

TC=9

0°C

typ.

25°C

125°

C12

5°C

125°

CV

°CA

K/W

VV

AµA

pFA

DW

GS

04-0

1A10

017

58.

510

.12

0.62

0.54

2.0

700

19.0

12.5

DW

GS

10-0

1C25

.05.

200.

990.

9410

.0<

1019

.080

.0D

WG

S04

-018

A18

05.

010

.12

0.86

0.85

2.0

700

8.8

12.5

DW

GS

04-0

18C

8.4

10.1

21.

251.

024.

0<

108.

832

.0D

WG

S10

-018

A11

.05.

200.

800.

805.

013

0022

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WG

S10

-018

C15

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201.

211.

047.

5<

1022

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.0D

WG

S20

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A17

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700.

800.

807.

520

0033

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.0D

WG

S20

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C23

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701.

241.

0720

.0<

1033

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0.0

DW

GS

04-0

25A

250

3.9

10.1

21.

301.

302.

070

06.

412

.5D

WG

S04

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C7.

810

.12

1.26

1.05

4.0

< 10

6.4

32.0

DW

GS

10-0

25A

9.0

5.20

1.25

1.25

5.0

1300

18.0

30.0

DW

GS

10-0

25C

14.0

5.20

1.26

1.07

7.5

< 10

18.0

80.0

DW

GS

20-0

25A

13.0

3.70

1.25

1.25

7.5

2000

26.0

50.0

DW

GS

20-0

25C

20.0

3.70

1.24

1.10

20.0

< 10

26.0

120.

0D

WG

S04

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300

3.5

10.1

21.

601.

602.

070

03.

712

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WG

S04

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6.0

10.1

21.

511.

104.

0<

103.

732

.0D

WG

S10

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8.0

5.20

1.60

1.60

5.0

1300

9.0

30.0

DW

GS

10-0

3C17

.55.

201.

561.

117.

510

9.0

80.0

DW

GS

20-0

3C25

.03.

701.

561.

1420

.015

14.0

120.

0

37©

200

8 IX

YS

All

right

s re

serv

ed

SiN

Pas

siva

tion

GaA

s S

chot

tky

Dio

des

bondable

Type

Chi

psD

imen

sion

sW

afer

per

thic

knes

sW

afer

AB

mm

mm

mm

DW

GS

04-0

1A•

4060

1.30

1.30

DW

GS

10-0

1C•

2126

2.10

1.60

DW

GS

04-0

18A

•40

601.

301.

30D

WG

S04

-018

C•

4060

1.30

1.30

DW

GS

10-0

18A

•21

262.

101.

60D

WG

S10

-018

C•

2126

2.10

1.60

DW

GS

20-0

18A

•14

803.

001.

60D

WG

S20

-018

C•

1480

3.00

1.60

0.45

DW

GS

04-0

25A

•40

601.

301.

30D

WG

S04

-025

C•

4060

1.30

1.30

DW

GS

10-0

25A

•21

262.

101.

60D

WG

S10

-025

C•

2126

2.10

1.60

DW

GS

20-0

25A

•14

803.

001.

60D

WG

S20

-025

C•

1480

3.00

1.60

DW

GS

04-0

3A•

4060

1.30

1.30

DW

GS

04-0

3C•

4060

1.30

1.30

DW

GS

10-0

3A•

2126

2.10

1.60

DW

GS

10-0

3C•

2126

2.10

1.60

DW

GS

20-0

3C•

1480

3.00

1.60

Tole

ranc

e-0

.1-0

.1±1

0 %

38©

200

8 IX

YS

All

right

s re

serv

ed

Sch

ottk

y D

iode

s

Type

VR

RM

I R@

TV

JT V

JMI F

AV

MR

thJC

①V

FI F

SM

Rev

erse

Rec

over

y @

25

°CV

RR

Mre

ct. d

= 0

,5ty

p.25

°C

T VJ=

125

°C@

I FI R

Mt r

r@

I F-d

i/dt

T C =

125

°C

typ.

typ.

Vm

A°C

°CA

K/W

VV

AA

Ans

AA

/us

DW

S39

-08D

812

5010

015

014

50.

80.

310.

2160

1000

tbd

tbd

5020

0D

WS

9-15

B15

100

100

150

tbd

1.7

0.39

0.27

1016

0tb

dtb

d10

200

DW

S19

-15B

200

100

150

651.

40.

390.

2720

350

tbd

tbd

2020

0D

WS

29-1

5B35

010

015

098

1.1

0.39

0.27

4066

0tb

dtb

d40

200

DW

S7-

30B

3040

100

150

tbd

1.7

0.43

0.34

1014

0tb

dtb

d10

200

DW

S17

-30B

8010

015

0tb

d1.

40.

430.

3420

330

2.4

tbd

2020

0D

WS

217-

30B

140

100

150

651.

20.

430.

3428

420

5.5

tbd

2820

0D

WS

27-3

0B15

010

015

082

1.1

0.43

0.34

4052

0tb

dtb

d40

200

DW

S37

-30B

250

100

150

102

0.8

0.43

0.34

6080

0tb

dtb

d50

200

DW

S93

-45B

4535

100

150

tbd

tbd

0.48

0.43

7tb

dtb

dtb

d7

200

DW

S94

-45A

1.8

125

175

tbd

tbd

0.66

0.54

7tb

dtb

dtb

d7

200

DW

S3-

45B

4010

015

028

1.7

0.48

0.43

1016

0tb

dtb

d10

200

DW

S4-

45A

2.5

125

175

321.

70.

660.

5310

140

tbd

tbd

1020

0D

WS

13-4

5B10

010

015

042

1.4

0.48

0.43

2032

01.

4tb

d20

200

DW

S14

-45A

512

517

547

1.4

0.66

0.53

2028

01.

5tb

d20

200

DW

S21

3-45

B14

010

015

0tb

d1.

20.

480.

4328

tbd

tbd

tbd

2820

0D

WS

214-

45A

712

517

5tb

d1.

20.

660.

5428

tbd

tbd

tbd

2820

0D

WS

23-4

5B20

010

015

063

1.1

0.48

0.43

4064

02

tbd

4020

0D

WS

24-4

5A10

125

175

681.

10.

660.

5440

550

2tb

d40

200

DW

S33

-45B

250

100

150

890.

80.

480.

4360

900

2.6

tbd

5020

0D

WS

34-4

5A10

125

175

950.

80.

660.

5460

800

2.5

tbd

5020

0

①

Mou

nted

on

DC

B

39©

200

8 IX

YS

All

right

s re

serv

ed

Type

Chi

psD

imen

sion

sSi

per

Waf

erA

Bth

ickn

ess

6 "

mm

mm

mm

DW

S39

-08D

•51

35.

415.

410.

25D

WS

9-15

B•

2783

2.4

2.4

0.25

DW

S19

-15B

•15

023.

253.

250.

25D

WS

29-1

5B•

758

4.44

4.44

0.25

DW

S7-

30B

•27

832.

42.

40.

25D

WS

17-3

0B•

1502

3.25

3.25

0.25

DW

S21

7-30

B•

1000

4.45

3.25

0.25

DW

S27

-30B

•75

84.

444.

440.

25D

WS

37-3

0B•

513

5.41

5.41

0.25

DW

S93

-45B

•41

802

20.

25D

WS

94-4

5A•

4180

22

0.25

DW

S3-

45B

•27

832.

42.

40.

25D

WS

4-45

A•

2783

2.4

2.4

0.25

DW

S13

-45B

•15

023.

253.

250.

25D

WS

14-4

5A•

1502

3.25

3.25

0.25

DW

S21

3-45

B•

1000

4.45

3.25

0.25

DW

S21

4-45

A•

1000

4.45

3.25

0.25

DW

S23

-45B

••

758

4.44

4.44

0.25

DW

S24

-45A

•75

84.

444.

440.

25D

WS

33-4

5B•

•51

35.

415.

410.

25D

WS

34-4

5A•

•51

35.

415.

410.

25To

lera

nce

-0.1

-0.1

5%

solderable

bondable

Sch

ottk

y D

iode

s

40©

200

8 IX

YS

All

right

s re

serv

ed

Sch

ottk

y D

iode

s

Type

VR

RM

I R@

TV

JT V

JMI F

AV

MR

thJC

①V

FI F

SM

Rev

erse

Rec

over

y @

25

°CV

RR

Mre

ct. d

= 0

,5ty

p.25

°C

T VJ=

125

°C@

I FI R

Mt r

r@

I F-d

i/dt

T C =

125

°C

typ.

typ.

Vm

A°C

°CA

K/W

VV

AA

Ans

AA

/us

DW

S95

-60B

6035

100

150

tbd

tbd

0.59

0.52

7tb

dtb

dtb

d7

200

DW

S96

-60A

1.8

125

175

tbd

tbd

0.71

0.59

7tb

dtb

dtb

d7

200

DW

S5-

60B

4010

015

0tb

d1.

70.

590.

5210

170

tbd

tbd

1020

0D

WS

6-60

A2.

512

517

5tb

d1.

70.

710.

6110

170

tbd

tbd

1020

0D

WS

15-6

0B50

100

150

431.

40.

590.

5220

320

tbd

tbd

2020

0D

WS

16-6

0A5

125

175

tbd

1.4

0.71

0.59

20tb

dtb

dtb

d20

200

DW

S25

-60B

100

100

150

631.

10.

590.

5240

660

tbd

tbd

4020

0D

WS

26-6

0A10

125

175

tbd

1.1

0.71

0.59

40tb

dtb

dtb

d40

200

DW

S35

-60B

200

100

150

820.

80.

590.

4960

900

2.5

tbd

5020

0D

WS

25-8

0B80

150

100

150

661.

10.

70.

5840

660

1.5

tbd

4020

0D

WS

36-8

0A10

125

175

910.

80.

780.

6160

700

2tb

d50

200

DW

S92

-100

A10

01.

812

517

5tb

dtb

d0.

80.

637

tbd

tbd

tbd

720

0D

WS

2-10

0A2.

512

517

532

1.7

0.82

0.63

1012

02

tbd

1020

0D

WS

12-1

00A

512

517

545

1.4

0.82

0.63

2023

02.

3tb

d20

200

DW

S21

2-10

0A7

125

175

tbd

1.2

0.8

0.63

28tb

dtb

dtb

d28

200

DW

S22

-100

A10

125

175

651.

10.

820.

6340

450

2.6

tbd

4020

0D

WS

32-1

00A

2012

517

592

0.8

0.82

0.63

6070

03.

4tb

d50

200

DW

S91

-150

A15

01.

812

517

5tb

dtb

d0.

810.

667

tbd

tbd

tbd

720

0D

WS

1-15

0A2.

512

517

530

1.7

0.81

0.66

1012

03

tbd

1020

0D

WS

11-1

50A

512

517

543

1.4

0.81

0.66

2020

04

tbd

2020

0D

WS

211-

150A

712

517

5tb

d1.

20.

810.

6628

tbd

tbd

tbd

2820

0D

WS

21-1

50A

1012

517

560

1.1

0.81

0.66

4045

0tb

dtb

d40

200

DW

S31

-150

A20

125

175

850.

80.

810.

6660

700

4.5

tbd

5020

0D

WS

1-18

0A18

02.

512

517

530

1.7

0.82

0.67

1012

03.

5tb

d10

200

DW

S1-

200A

200

2.5

125

175

tbd

1.7

0.84

0.68

1012

0tb

dtb

d10

200

DW

S20

-200

A10

125

175

tbd

1.1

0.84

0.68

40tb

dtb

dtb

d40

200

DW

S30

-200

A5

125

175

tbd

0.8

0.84

0.68

6070

05

tbd

5020

0

①

Mou

nted

on

DC

B

41©

200

8 IX

YS

All

right

s re

serv

ed

Type

Chi

psD

imen

sion

sSi

per

Waf

erA

Bth

ickn

ess

mm

mm

mm

DW

S95

-60B

•41

802

20.

25D

WS

96-6

0A•

4180

22

0.25

DW

S5-

60B

•27

832.

42.

40.

25D

WS

6-60

A•

2783

2.4

2.4

0.25

DW

S15

-60B

•15

023.

253.

250.

25D

WS

16-6

0A•

1502

3.25

3.25

0.25

DW

S25

-60B

•75

84.

444.

440.

25D

WS

26-6

0A•

758

4.44

4.44

0.25

DW

S35

-60B

•51

35.

415.

410.

25D

WS

25-8

0B•

758

4.44

4.44

0.25

DW

S36

-80A

•51

35.

415.

410.

25D

WS

92-1

00A

•41

802

20.

25D

WS

2-10

0A•

2783

2.4

2.4

0.25

DW

S12

-100

A•

1502

3.25

3.25

0.25

DW

S21

2-10

0A•

1000

4.45

3.25

0.25

DW

S22

-100

A•

758

4.44

4.44

0.25

DW

S32

-100

A•

•51

35.

415.

410.

25D

WS

91-1

50A

•41

802

20.

25D

WS

1-15

0A•

2783

2.4

2.4

0.25

DW

S11

-150

A•

1502

3.25

3.25

0.25

DW

S21

1-15

0A•

1000

4.45

3.25

0.25

DW

S21

-150

A•

758

4.44

4.44

0.25

DW

S31

-150

A•

513

5.41

5.41

0.25

DW

S1-

180A

•27

832.

42.

40.

25D

WS

1-20

0A•

2783

2.4

2.4

0.25

DW

S20

-200

A•

758

4.44

4.44

0.25

DW

S30

-200

A•

513

5.41

5.41

0.25

Tole

ranc

e-0

.1-0

.15%

solderable

bondable

Sch

ottk

y D

iode

s

42©

200

8 IX

YS

All

right

s re

serv

ed

Pha

se C

ontr

ol T

hyri

stor

s

Type

VD

RM

I RT V

JMI F(

AV)

MR

thJC

②V T

I TSM

t qI H

I LV

RR

MV

RR

Mre

ct. d

=0.5

T VJ =

@I F

non-

rep.

VR =

100

V, V

D =

VD

RM

dv/d

t@

I TR

GK =

∝@

t PT V

JMT C

=100

°Cm

ax.

25°C

150°

Ct P

=10m

st P

=200

µs, d

i/dt =

-10

A/µ

sV

D =

6V

T VJ =

typ.

T VJ =

T VJM

T VJ =

25°C

25°C

Vm

A°C

AK

/WV

VA

Aµs

V/µ

sA

mA

mA

µs

CW

P7-

CG

800

-5

125

151.

71.

521.

4820

200

tbd

tbd

tbd

5075

10C

WP

812

004

150

tbd

1.7

1.50

1.46

4430

060

2016

4010

010

CW

P8-

CG

415

0tb

d1.

71.

501.

4644

300

6020

1680

100

10C

WP

3520

150

tbd

0.7

1.43

1.39

150

1050

100

1050

8010

010

CW

P16

-CG

1200

-8

150

251.

21.

371.

3345

400

150

1011

100

150

10C

WP

21-C

G16

0012

611.

11.

531.

4980

520

150

2015

100

150

10C

WP

22-C

G12

360.

91.

531.

4980

520

150

1520

100

450

10C

WP

2420

tbd

0.9

1.30

1.26

6060

060

2025

100

200

10C

WP

25-C

G20

tbd

0.9

1.24

1.20

6060

060

2025

100

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45IXYS reserves the right to change limits, test conditions and dimensions

WWWWWhahahahahat is DCBt is DCBt is DCBt is DCBt is DCB

DCB stands for Direct Copper Bon-ding and denotes a process in whichcopper and a ceramic material arefused together, at high temperatures.

IXYS has developed this particularprocess in which two layers of copperare directly bonded to an aluminum-oxide or aluminum-nitride ceramicbase. Since 1981 our power moduleshave been designed with DCBsubstrates. The DCB process yields athin base and eliminates the need forthick, heavy copper bases that wereused in the past. Because moduleswith DCB bases use fewer layers, theyhave much lower thermal resistancevalues and much better power cyclingcapabilities.

Our power technology allows us toproduce DCB ceramic plates in largequantities. The dimensions of ourstandard sheet are 138 x 190.5 mm,(or 5,5“ x 7,5“).

Properties of DCB ceramicsubstrates:

• High mechanical strength andmechanically stability

• Good adhesion and corrosionresistance

• Excellent electrical insulation testedto 2.5 kV(RMS) for 1 minute or more

• Excellent thermal conductivity

• Superb thermal cycling stability

• Matched thermal expansioncoefficient to that of silicon and GaAs

• Good heat spreading

• May be etched just like PC boards

• Environmentally friendly

Advantages for the users:

• The 0.3 mm thick copper layerpermits the copper pattern to handlehigh currents.

• The excellent thermal conductivityallows the possibility to place powersemiconductor chips in very closeproximity. This results in more powerper unit of volume and improvedreliability of a power system.

• Lighter base plate material thancopper base plate.

• High voltage insulation at highertemperature.

• DCB is the basis for the „chip-on-board“ technology which is thepackaging trend for the nextgeneration integrated powermodules.

• IXYS experience in using DCB inpower modules. Wealth ofapplication know-how and support.

Starting materials for DCB ceramicsubstrates are 0.3 mm thick copper foils,shown on both sides, top and bottom of theceramic base plate.

Both sides of the finishedDCB ceramic substrate are

copper. Standard dimensionsare 138 x 190.5 mm (usable

area is 130 x 180 mm).A finished DCB part istypically nickel plated.

46 © 2008 IXYS All rights reserved

DCB DaDCB DaDCB DaDCB DaDCB Datatatatata Unclad aluminum oxide ceramic

Al2O3 content > 96 %

dimensions 138 x 190.5, 138 x 210, 115 x 165* mm

usable area max. 130 x 180, 107 x 156* mm

thickness 1.00, 0.63, 0.38, 0.25 mm

arc through voltage 10 kV

thermal conductivity > 24 W/m . K

Conduction layers - both sides

copper thickness 0.3 ±0.015 (< 0.3 on request) mm

conductor width min. 0.3 ± 0.2 mm

conductor spacing min. 0.4 ± 0.2 mm

spacing conductor/edge of ceramic min. 0.35 ± 0.2 mm

surface finishes available bare copper; nickel plated;nickel + gold plated

peel-off resistance (DIN 532282) min. 9 N/mm

DCB ceramic substrate

application temperature range -55...+850 °C

resistant to hydrogen max. up to 400 °C

thermal expansion coefficient typical 7.4 x 10-6 K-1

dimensions according

to customer specific drawing

DCB parts are available as: • bonded plate• bonded and patterned plate• prelasered, unbroken plate• individuale substrates

ALN - DCB on request

* = (for 0.25 mm thk.)

US Patent # 6,798,060 "power device and direct aluminum bonded substrate“.