Research ArticleBandwidth Extension of High Compliance Current Mirror byUsing Compensation Methods

Maneesha Gupta Urvashi Singh and Richa Srivastava

Netaji Subhash Institute of Technology Dwarka Sector 3 New Delhi 110078 India

Correspondence should be addressed to Urvashi Singh urvashisingh27gmailcom

Received 19 October 2013 Revised 6 December 2013 Accepted 6 December 2013 Published 21 January 2014

Academic Editor Gerard Ghibaudo

Copyright copy 2014 Maneesha Gupta et al This is an open access article distributed under the Creative Commons AttributionLicense which permits unrestricted use distribution and reproduction in any medium provided the original work is properlycited

Due to the huge demand of high-speed analog integrated circuits it is essential to develop a wideband low input impedance currentmirror that can be operated at low power supply In this paper a novel wideband low voltage high compliance current mirror usinglow voltage cascode current mirror (LVCCM) as a basic building block is proposed The resistive compensation and inductivepeaking methods have been used to extend the bandwidth of the conventional current mirror By replacing conventional LVCCMin a high compliance currentmirror with the compensated LVCCM the bandwidth extension ratio of 34 has been achieved with noadditional DC power dissipation and without affecting its other performances The circuits are designed in TSMC 018120583m CMOStechnology on Spectre simulator of Cadence

1 Introduction

In todayrsquos electronicsworld the demandof high-speed analogdevices has increased tremendously due to the explosivegrowth of communication systems [1 2] Moreover theimportance of low power and low voltage analog and mixed-signal circuits is increasing with the need of portable elec-tronics devices Since the current-mode devices can operateat low voltage and has higher bandwidth than that of voltage-mode devices these devices are becoming the first preferenceof designers for signal processing applications [3 4]

Current mirror is one of the most widely used current-mode circuit in analog integrated circuits such as operationalamplifiers current-mode analog-to-digital and digital-to-analog data converters artificial neural networks currentsensing circuits current-mode filters current conveyorsand translinear loops [5ndash10] Current mirrors are basicallyused for current amplification level shifting biasing andloading in a circuit A current mirror should have lowinput impedance and high output impedance for properfunctionality Other desirable features of a current mirrorinclude wide input and output current swings high linearityaccurate current copy and low standby power dissipation

But a conventional current mirror (ie a current mirrorwhich consists of two MOS transistors) has low outputimpedance and high current transfer error Cascoding oftransistors improves the output impedance and accuracy butit also increases the power supply requirement and decreasesinputoutput compliances Several low voltage current mir-rors are reported in [11ndash14] A low voltage cascode currentmirror (LVCCM) is one of the efficient and simple currentmirrors It provides low input impedance and high outputimpedance with reduced power supply requirement (shownin Figure 1) It has been used inmany analog andmixed signalcircuits [15ndash18]

The input impedance and input voltage can be lowered tothe minimum value by applying input current at the outputnode of the flipped voltage follower (FVF) of LVCCM asshown in Figure 2

In this paper conventional LVCCM (Figure 2) is analyzedat high frequency and its bandwidth is calculated It isfound that the bandwidth of LVCCM is not large enough forhigh-speed applications The bandwidth of a circuit can beenhanced by using resistive compensation technique [20 21]inductive peaking technique [22 23] negative capacitancecompensation [24] feedforward compensation [25] and so

Hindawi Publishing CorporationActive and Passive Electronic ComponentsVolume 2014 Article ID 274795 8 pageshttpdxdoiorg1011552014274795

2 Active and Passive Electronic Components

VDD

M1 M2

M3M4

Iin Iout

VSS

VSS

Rk

Mk

Figure 1 Conventional low voltage cascode current mirror(LVCCM) when input current is fed at the drain terminal oftransistor1198723

VDDVDD

M1 M2

M3M4

Iin

Iout

VSS

VSS

IbRk

Mk

Figure 2 Conventional LVCCM when input current is fed at thedrain terminal of1198721

forth The bandwidth of LVCCM has been enhanced byGupta et al in [26] by using resistive compensation methodIn this work both resistive and inductive compensationtechniques are used to extend the bandwidth of conventionalLVCCM and the maximum obtained bandwidth extensionratio (BWER) is 382 by using 20 nH inductance between gateterminals of transistors1198721 and1198722 in LVCCM (Figure 2)

The FVF based LVCCM has an offset which can bereduced by providing a negative feedback in the circuit JavadAzhari et al [19] have developed a current mirror whichhas reduced offset effect at the output In this paper theminus3 dB frequency of the high compliance current mirror [19]is enhanced by using compensated high frequency LVCCM

Rb

iin

iout

i3

(a)

(c)(b) (d)

Vd3

Cgs1 + Cgs2 gm3Vgs3

gm1Vgs1 gm2Vgs2

gm4Vgs4

Cgs3 Cgs4

Figure 3 Small signal model of LVCCM (shown in Figure 2)

The paper is organized in 6 sections Section 2 includessmall signal analysis of conventional LVCCM The appli-cation of compensation methods in conventional LVCCMis explained in Section 3 The wideband high compliancecurrent mirror is proposed in Section 4 Simulation resultsare given in Section 5 and then conclusions are drawn in thelast section

2 Small Signal Analysis ofConventional LVCCM

The small signal model of conventional LVCCM is shown inFigure 3 The channel-length modulation effect of transistorshas been ignored It has also been assumed that the substrateof each transistor is connected to the source terminal oftransistor so that there is no body effect and simulations arealso performed on the same basis

In analytical derivations 119862119892119904119894 and 119892119898119894 are the gate tosource capacitance and transconductance of transistor 119872119894respectively (where 119894 = 1 to 4)

Applying KCL at nodes (b) and (c) in Figure 3 we get

119894in + 1198921198983V1198921199043 = 1198921198981V1198921199041 + 1198941 (1)

1198921198984V1198921199044 + 1198941 = 1198921198982V1198921199042 (2)

Substituting 1198941 from (1) into (2)

119894in + 1198921198983V1198921199043 = 1198921198981V1198921199041 + 1198921198982V1198921199042 minus 1198921198984V1198921199044 (3)

Neglecting channel-length modulation effect the outputcurrent 119894out is

119894out = 1198921198984V1198921199044 (4)

Using (4) in (3) we obtain

119894in + 1198921198983V1198921199043 = 1198921198981V1198921199041 + 1198921198982V1198921199042 minus 119894out (5)

Also on performing nodal analysis at node (c) we get

(V1199044 minus V1198924) 1199041198621198921199044 + 1198921198982V1198921199042 = 119894out (6)

Active and Passive Electronic Components 3

Then V1198921199042 can be obtained as

V1198921199042 = (119894out1198921198982

) + (1199041198621198921199044V1198921199044

1198921198982

) (7)

Substituting V1198921199044 from (4) into (7)

V1198921199042 = (119894out1198921198982

)(1 +1199041198621198921199044

1198921198984

) (8)

At node (d) we have

1198941 = minus1199041198621198921199043V1198921199043 = 1199041198621198921199044V1198921199044 (9)

V1198921199043 = minusV1198921199044 (1198621198921199044

1198621198921199043

) = minus119894out (1198621198921199044

11989211989841198621198921199043

) (10)

Substituting V1198921199043 and V1198921199042 from (10) and (8) respectively into(5)

119894in minus 119894out (11989211989831198621198921199044

11989211989841198621198921199043

)

= 119894out (1198921198981 + 1198921198982) (1198921198984 + 1199041198621198921199044)

11989211989821198921198984

minus 1

(11)

Simplifying (11) to obtain small signal current gain 119860 119894(119904)

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043

times 11990411986211989211990431198621198921199044 (1198921198981 + 1198921198982) + 119892119898111989211989841198621198921199043

+1198921198982

11989211989831198621198921199044minus1

(12)

Let us assume 1198921198981 = 1198921198982 and 1198621198921199043 = 1198621198921199044 = 119862119892119904 then

119860 119894 (119904) =1198921198984

2119904119862119892119904 + 1198921198984 + 1198921198983

(13)

If we choose 1198921198983 = 1198921198984 = 119892119898

119860 119894 (119904) = (119892119898

2119862119892119904

)(1

119904 + 119892119898119862119892119904

) (14)

The bandwidth of conventional LVCCM is given by

1205960 = (119892119898

119862119892119904

) (15)

3 High Frequency LVCCM

The circuit of the modified LVCCM is shown in Figure 4 Animpedance 119885 is inserted between the gates of transistors 1198721

and1198722 [20ndash23] The impedance 119885 can be a resistance (119877) orinductance (119871)

VDDVDD

M1 M2

M3M4

Iin

Iout

VSS

VSS

Z

IbRk

Mk

Figure 4 Compensated LVCCM

Rb

iin

iout

i3

(a)

(c)(b) (d)

Vd3ZVg1

(e)

gm3Vgs3

gm1Vgs1gm2Vgs2

gm4Vgs4Cgs2

Cgs3 Cgs4

Cgs1

Figure 5 Small signal model of the compensated LVCCM

31 Small Signal Analysis The small signal model of themodified LVCCM is shown in Figure 5The analysis has beendone on the basis of same assumptions as taken in Section 2

On applying KCL at nodes (b) and (c) in Figure 5 we get

119894in = 1198921198981V1198921199041 + 1198921198982V1198921199042 minus 119894out minus 1198921198983V1198921199043 (16)

where V1198921199041 is given by

V1198921199041 = V1198921199042 (1

1 + 1199041198621198921199041119885) (17)

From (7) V1198921199042 = (119894out1198921198982)(1 + 11990411986211989211990441198921198984) then (17) can bemodified into

V1198921199041 = (119894out

1198921198982 (1 + 1199041198621198921199041119885))(1 +

1199041198621198921199044

1198921198984

) (18)

4 Active and Passive Electronic Components

Using (7) (10) and (18) and performing some simplificationson (16) to obtain current transfer function of the compen-sated LVCCMThe obtained 119860 119894(119904) is

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043 (1 + 1199041198621198921199041119885)

times 11990421198921198982119862119892119904111986211989211990431198621198921199044119885 + 1199041198621198921199044

times (11989211989811198621198921199043 + 11989211989821198621198921199043 + 119892119898211989211989831198621198921199041119885)

+ 119892119898111989211989841198621198921199043 + 119892119898211989211989831198621198921199044minus1

(19)

311 Bandwidth Extension Using Resistive CompensationMethod On taking 119885 = 119877 (ie resistive compensationmethod) then the current transfer function becomes

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043 (1 + 1199041198621198921199041119877)

times 11990421198921198982119862119892119904111986211989211990431198621198921199044119877 + 1199041198621198921199044

times (11989211989811198621198921199043 + 11989211989821198621198921199043 + 119892119898211989211989831198621198921199041119877)

+ 119892119898111989211989841198621198921199043 + 119892119898211989211989831198621198921199044minus1

(20)

Again if we assume 1198921198981 = 1198921198982 and 1198621198921199043 = 1198621198921199044 = 119862119892119904 then(20) gets transformed into

119860 119894 (119904)

=1198921198984 (1 + 1199041198621198921199041119877)

11990421198621198921199041119862119892119904119877 + 119904 (2119862119892119904 + 11989211989831198621198921199041119877) + 1198921198984 + 1198921198983

(21)

Let us suppose 1198921198983 = 1198921198984 = 119892119898 then 119860 119894(119904) is

119860 119894 (119904) =119892119898 (1 + 119904119862119892119904119877)

11990421198622119892119904119877 + 119904 (2119862119892119904 + 119892119898119862119892119904119877) + 2119892119898

(22)

Equation (22) can be expressed as

119860 119894 (119904)

= (119892119898

119862119892119904

)(119904 + 1119862119892119904119877)

1199042 + 119904 (2119862119892119904119877 + 119892119898119862119892119904) + (21198921198981198622119892119904119877)

(23)

The transfer function of modified LVCCM is of second orderwith one zero and two poles The zero and poles of themodified LVCCM are

1198851 = minus(1

119862119892119904119877)

1198751 = minus(119892119898

119862119892119904

)

1198752 = minus(2

119862119892119904119877)

(24)

At 119877 = 1119892119898 one pole-zero pair (1198751 minus 1198851) gets cancelledand the current transfer function (see (23)) will transforminto single pole low pass system and has bandwidth 1205960119877 =

(2119892119898119862119892119904) which is double of the conventional LVCCM (see(15))

312 Bandwidth Extension Using Inductive Peaking MethodOn taking 119885 = 119904119871 (ie inductive peaking method) thecurrent transfer function of the modified LVCCM is given by

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043 (1 + 11990421198621198921199041119871)

times 11990431198921198982119862119892119904111986211989211990431198621198921199044119871 + 119904

21198921198982119892119898311986211989211990411198621198921199044119871

+ 1199041198621198921199044 (11989211989811198621198921199043 + 11989211989821198621198921199043)

+ 119892119898111989211989841198621198921199043 + 119892119898211989211989831198621198921199044minus1

(25)

The effect of using an inductor on small signal current gaincan be observed from (25) it adds a zero and a pole tothe transfer function which allows more control over thefrequency response of the LVCCM [27]

By definition [28] at 120596 = 12059601003816100381610038161003816119860 119894(1205960)

10038161003816100381610038162= 05

1003816100381610038161003816119860 119894(0)10038161003816100381610038162 (26)

where |119860 119894(0)|2= 1 of a current mirror

From (25) and (26) the bandwidth of the proposedLVCCM is given by

1205960 congradic(

2

119862119892119904119871) minus (

119892119898

119862119892119904

)

2

(27)

It is obvious form (27) that the minus3 dB frequency of theinductively peaked LVCCMdepends on the value of inductor

At119871 = (11986211989211990451198922

119898) the bandwidth of thewideband current

mirror becomes

1205960119871 cong (3119892119898

119862119892119904

) (28)

The bandwidth of the inductively peaked LVCCM which isthrice of the conventional LVCCM for the chosen value ofinductor as shown in (28)

Active and Passive Electronic Components 5

VDD VDD

VDD

M1 M2

M3 M4

Iin

Iout

VSS

RL

M5

Ib1 Ib2

minusA

Figure 6 High compliance current mirror [19]

VDD VDD

VDD

M1 M2

M3M4

Iin

Iout

VSS

RL

M5

Ib1 Ib2

minusA

Z

Figure 7 Proposed wideband high compliance current mirror

Table 1 Circuit parameters

Parameters ValuePower supply (119881DD) 15 VAspect ratio (M1 =M2) (54018) 120583mAspect ratio (M3 =M4) (36018) 120583mAspect ratio (M5) (18018) 120583mBias current (119868

119887) 100120583A

Bias resistance (119877119896) 33MΩ

4 Proposed High Frequency Current Mirror

Due to the low voltage requirement low input impedanceand high accuracy LVCCM is used as a basic building blockin many analog and mixed signal systems Javad Azhari et

350

345

340

335

330

325

32000 10 125 15

Iout

Vout (V)025 05 075

I out

(120583A

)

Figure 8 Variation of output current with respect to output voltageof LVCCM

108 109 1010

25

0

minus25

minus50

minus75

I(d

B)

Frequency (Hz)

Conventional LVCCMProposed LVCCM (R = 1k)

Proposed LVCCM (R = 6k)Proposed LVCCM (L = 20n)

(495GHz minus30dB)(7365GHz minus30dB)(9646GHz minus30dB)(111GHz minus30dB)(1894GHz minus30dB)

Proposed LVCCM (L = 10n)

Figure 9 Frequency responses of designed LVCCM

al [19] have implemented a high compliance current mirror(shown in Figure 6) with a feedback mechanism to eliminatethe offset current produced in LVCCM (when input currentis fed at the drain terminal of transistor1198721 Figure 2)

The performance of current mirror has been improved in[19] by providing a feedback network but its bandwidth isdegraded In this paper we have modified the current mirror[19] by replacing the conventional LVCCMwith the proposedwideband LVCCM to obtain a wideband high performancecurrent mirror The proposed current mirror is shown inFigure 7

The bandwidth of the current mirror is enhanced withno additional DC power dissipation andwithout affecting theDC characteristics such as linearity

5 Simulation Results and Discussion

The circuits are designed in TSMC 018 120583m CMOS technol-ogy and simulated with Spectre simulator of Cadence Thecircuit parameters of LVCCM are given in Table 1

6 Active and Passive Electronic Components

Table 2 Simulated circuit parameters

Parameters M1 M2 M3 M4Transconductance(119892119898times 10minus6) AV 526261 585829 411018 399300

Gate to source capacitance(119862119892119904

times 10minus15) F 11010 15670 7842 7131

Overdrive voltage(119881119892119904

minus 119881th) times 10minus3 V

0522 0519 84454 89751

00 10

200

150

100

50

00

minus50

Vout (V)

I out

(120583A

)

025 05 075

Figure 10 Variation of output current with respect to output voltageof the proposed current mirror

The simulated values of transconductances gate to sourcecapacitances and overdrive voltages of transistors 1198721 11987221198723 and1198724 are given in Table 2

The minus3 dB frequencies of designed current mirrors areobtained at 1 kΩ 6 kΩ 10 nH and 20 nHvalues of impedanceThe peaking in the frequency response depends upon thevalue of impedance used for compensation and this limits thevalue of impedance

Figure 8 is the plot of output voltage requirement ofmod-ified LVCCM In Figure 8 the output current gets saturatedafter 025V and thus it can be concluded that the minimumoutput voltage requirement of the compensated LVCCM is025V

The frequency responses of conventional and widebandLVCCM are shown in Figure 9 The bandwidth is extendedfrom 495GHz to 1110 GHz by using119877 = 6 kΩ and 1894GHzby using 119871 = 20 nH

The input impedance of both conventional and compen-sated LVCCM is approximately 8Ω Table 3 summarizes thebandwidth of conventional and compensated LVCCM

The circuit parameters of the proposed wideband highcompliance current mirror are the same as taken in [19] Theinput impedance of the proposed wideband high frequencycurrentmirror is approximately 8Ω and does not changewiththe modification in the mirror

108 109 1010

Frequency (Hz)

25

0

minus25

minus50

minus75

I(d

B)

(483GHz minus30dB)(7066GHz minus30dB)(9107GHz minus30dB)(1045GHz minus30dB)(1645GHz minus30dB)

Proposed CM (L = 20n)Conventional CM

Proposed CM (R = 6k)

Proposed CM (R = 1k)Proposed CM (L = 10n)

Figure 11 Frequency responses of the conventional and proposedcurrent mirrors (where CM refers to current mirror)

The output current variationwith output voltage is shownin Figure 10The output compliance voltage is 66368mVTheoutput compliance voltages of the conventional and proposedcurrent mirror are the same

TheDCpower dissipation in the proposed currentmirroris the same as that in the conventional one [19] and it is21611 120583W The frequency response of the proposed currentmirror is shown in Figure 11 and it is compared with theconventional current mirror introduced in [19] The BWERof the proposed current mirror is 340 and it is obtained byusing 20 nH inductance

The Monte Carlo simulation of the proposed currentmirror with resistively compensated LVCCM (119877 = 6 kΩ)results in mean deviation of minus49663119890 minus 12 and standarddeviation of 11516119890 minus 9 The current mirror with inductivelypeaked LVCCM (119871 = 20 nH) has shown a mean deviationof minus53247119890 minus 12 and a standard deviation of 11941119890 minus 9 inthe Monte Carlo simulation by using Pspice (OrCAD) Thesimulation results of the proposed current mirror are givenin Table 4

6 Conclusion

In this work the bandwidth of a high compliance currentmirror is extended without affecting its DC characteristicsThe FVF based LVCCM is the basic building block ofthe proposed current mirror therefore in this paper wehave modified LVCCM by using compensation techniquesnamely resistive compensation and inductive peaking TheBWER of high frequency LVCCM is 224 and 382 by using6 kΩ resistance and 20 nH inductance respectively The highfrequency LVCCM is then used to replace the conventionalone in the proposed current mirror The BWER of theproposed wideband high compliance current mirror is 216by using 6 kΩ resistance and 340 by using 20 nH inductancewithout affecting its linearity and input impedance Theanalytical derivations and simulation results are justifyingthe approach used in this paper for bandwidth extensionThe proposed wideband current mirror can be employed

Active and Passive Electronic Components 7

Table 3 Bandwidth comparison of conventional and proposed LVCCM

Performance factorsLVCCM

Conventional Compensated119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 495 736 1110 964 1894

Table 4 Bandwidth comparison of conventional and proposed current mirrors

Performance factorsHigh compliance current mirror

Conventional [19] Proposed119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 483 706 1045 911 1645

in various analog integrated circuits for signal processingapplications

Conflict of Interests

The authors declare that there is no conflict of interestsregarding the publication of this paper

References

[1] S S Mohan M Del Mar Hershenson S P Boyd and T HLee ldquoBandwidth extension in CMOS with optimized on-chipinductorsrdquo IEEE Journal of Solid-State Circuits vol 35 no 3 pp346ndash355 2000

[2] S Galal and B Razavi ldquo40-Gbs amplifier and ESD protectioncircuit in 018-120583m CMOS technologyrdquo IEEE Journal of Solid-State Circuits vol 39 no 12 pp 2389ndash2396 2004

[3] B-D Liu C-Y Huang and H-Y Wu ldquoModular current-modedefuzzification circuit for fuzzy logic controllersrdquo ElectronicsLetters vol 30 no 16 pp 1287ndash1288 1994

[4] H Hassan M Anis and M Elmasry ldquoMOS current modecircuits analysis design and variabilityrdquo IEEE Transactions onVery Large Scale Integration (VLSI) Systems vol 13 no 8 pp885ndash898 2005

[5] M H Cohen and A G Andreou ldquoCurrent-mode subthresholdMOS implementation of the Herault-Jutten autoadaptive net-workrdquo IEEE Journal of Solid-State Circuits vol 27 no 5 pp 714ndash727 1992

[6] C-L Chen W-L Hsieh W-J Lai K-H Chen and C-SWang ldquoA high-speed and precise current sensing circuit withbulk control (CCB) techniquerdquo in Proceedings of the 15th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo08) pp 283ndash287 September 2008

[7] CWang and R Zhao ldquoContinuous-time current-mode currentmirror band pass filters with improved leap-frog structurerdquo inProceedings of the 1st International Congress on Image and SignalProcessing (CISP rsquo08) pp 146ndash148 May 2008

[8] G Souliotis and C Psychalinos ldquoCurrent-mode linear trans-formation filters using current mirrorsrdquo IEEE Transactions onCircuits and Systems II vol 55 no 6 pp 541ndash545 2008

[9] S S Rajput and S S Jamuar ldquoLow voltage low power andhigh performance current conveyors for low voltage analog andmixed mode signal processing applicationsrdquo Analog IntegratedCircuits and Signal Processing vol 41 no 1 pp 21ndash34 2004

[10] E Farshidi and H Asiaban ldquoA new true RMS-to-DC converterusing up-down translinear loop in CMOS technologyrdquo AnalogIntegrated Circuits and Signal Processing vol 70 no 3 pp 385ndash390 2012

[11] E Bruun and P Shah ldquoDynamic range of low-voltage cascodecurrent mirrorsrdquo in Proceedings of the 1995 IEEE InternationalSymposium on Circuits and Systems (ISCAS rsquo95) pp 1328ndash1331May 1995

[12] A Garimella L Garimella J Ramirez-Angulo A J Lopez-Martın and R G Carvajal ldquoLow-voltage high performancecompact all cascode CMOS current mirrorrdquo Electronics Lettersvol 41 no 25 pp 1359ndash1360 2005

[13] F Ledesma R Garcia and J Ramırez-Angulo ldquoComparisonof new and conventional low voltage current mirrorsrdquo inProceedings of the 45th Midwest Symposium on Circuits andSystems pp II49ndashII52 August 2002

[14] J Ramırez-Angulo R G Carvajal andA Torralba ldquoLow supplyvoltage high-performanceCMOS currentmirrorwith low inputand output voltage requirementsrdquo IEEE Transactions on Circuitsand Systems II vol 51 no 3 pp 124ndash129 2004

[15] R G Carvajal J Ramirez-Angulo A Lopez Martin A Tor-ralba J Galan et al ldquoThe flipped voltage follower a useful cellfor low voltage low power circuit designrdquo IEEE Transactions onCircuits and Systems I vol 52 no 7 pp 1276ndash1279 2005

[16] L Lee R M Sidek S S Jamuar and S Khatun ldquoLowvoltage cascode current mirror in a 18 GHz variable gain lownoise amplifier (VGLNA)rdquo in Proceedings of the InternationalSymposium on Communications and Information Technologies(ISCIT rsquo06) pp 1097ndash1100 October 2006

[17] H Sato A Hyogo and K Sekine ldquoA low voltage OTA usingMOSFET in the triode region and cascode current mirrorrdquo inProceedings of the European Conference on Circuit Theory andDesign pp III453ndashIII456 September 2005

[18] Y Cong and R L Geiger ldquoCascode current mirrors with lowinput output and supply voltage requirementsrdquo in Proceedingsof the Midwest Circuits and Systems Conference (MWSCAS rsquo00)vol 1 pp 490ndash493 August 2000

[19] S Javad Azhari H Faraji Baghtash and K Monfaredi ldquoA novelultra-high compliance high output impedance low power veryaccurate high performance current mirrorrdquo MicroelectronicsJournal vol 42 no 2 pp 432ndash439 2011

[20] T Voo and C Toumazou ldquoHigh-speed current mirror resistivecompensation techniquerdquo IEE Electronics Letters vol 31 no 4pp 248ndash250 1995

[21] M Gupta and U Singh ldquoA new flipped voltage followerwith enhanced bandwidth and low output impedancerdquo Analog

8 Active and Passive Electronic Components

Integrated Circuits and Signal Processing vol 72 no 1 pp 279ndash288 2012

[22] S Shekhar J SWalling andD J Allstot ldquoBandwidth extensiontechniques for CMOS amplifiersrdquo IEEE Journal of Solid-StateCircuits vol 41 no 11 pp 2424ndash2438 2006

[23] U Singh and M Gupta ldquoHigh frequency flipped voltage fol-lower with improved performance and its applicationrdquo Micro-electronics Journal vol 44 no 12 pp 1175ndash1192 2013

[24] D J Comer D T Comer J B Perkins K D Clark and A P CGenz ldquoBandwidth extension of high-gain CMOS stages usingactive negative capacitancerdquo in Proceedings of the 13th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo06) pp 628ndash631 December 2006

[25] W Sansen and Z Y Chang ldquoFeedforward compensation tech-niques for high-frequency CMOS amplifiersrdquo IEEE Journal ofSolid-State Circuits vol 25 no 6 pp 1590ndash1595 1990

[26] M Gupta P Aggarwal P Singh and N K Jindal ldquoLow voltagecurrent mirrors with enhanced bandwidthrdquo Analog IntegratedCircuits and Signal Processing vol 59 no 1 pp 97ndash103 2009

[27] M Ebrahimzadeh ldquoA low voltage high quality factor floatinggate tunable active inductor with independent inductance andquality factor tuningrdquo International Journal of Computer andElectrical Engineering vol 3 no 2 pp 180ndash183 2011

[28] S Adel Sedra and C Kenneth Smith Microelectronics CircuitsOxfordUniversity Press NewYork NY USA 5th edition 2005

International Journal of

AerospaceEngineeringHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

RoboticsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

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Active and Passive Electronic Components

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Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

International Journal of

RotatingMachinery

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporation httpwwwhindawicom

Journal ofEngineeringVolume 2014

Submit your manuscripts athttpwwwhindawicom

VLSI Design

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Shock and Vibration

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

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Acoustics and VibrationAdvances in

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Electrical and Computer Engineering

Journal of

Advances inOptoElectronics

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DistributedSensor Networks

International Journal of

2 Active and Passive Electronic Components

VDD

M1 M2

M3M4

Iin Iout

VSS

VSS

Rk

Mk

Figure 1 Conventional low voltage cascode current mirror(LVCCM) when input current is fed at the drain terminal oftransistor1198723

VDDVDD

M1 M2

M3M4

Iin

Iout

VSS

VSS

IbRk

Mk

Figure 2 Conventional LVCCM when input current is fed at thedrain terminal of1198721

forth The bandwidth of LVCCM has been enhanced byGupta et al in [26] by using resistive compensation methodIn this work both resistive and inductive compensationtechniques are used to extend the bandwidth of conventionalLVCCM and the maximum obtained bandwidth extensionratio (BWER) is 382 by using 20 nH inductance between gateterminals of transistors1198721 and1198722 in LVCCM (Figure 2)

The FVF based LVCCM has an offset which can bereduced by providing a negative feedback in the circuit JavadAzhari et al [19] have developed a current mirror whichhas reduced offset effect at the output In this paper theminus3 dB frequency of the high compliance current mirror [19]is enhanced by using compensated high frequency LVCCM

Rb

iin

iout

i3

(a)

(c)(b) (d)

Vd3

Cgs1 + Cgs2 gm3Vgs3

gm1Vgs1 gm2Vgs2

gm4Vgs4

Cgs3 Cgs4

Figure 3 Small signal model of LVCCM (shown in Figure 2)

The paper is organized in 6 sections Section 2 includessmall signal analysis of conventional LVCCM The appli-cation of compensation methods in conventional LVCCMis explained in Section 3 The wideband high compliancecurrent mirror is proposed in Section 4 Simulation resultsare given in Section 5 and then conclusions are drawn in thelast section

2 Small Signal Analysis ofConventional LVCCM

The small signal model of conventional LVCCM is shown inFigure 3 The channel-length modulation effect of transistorshas been ignored It has also been assumed that the substrateof each transistor is connected to the source terminal oftransistor so that there is no body effect and simulations arealso performed on the same basis

In analytical derivations 119862119892119904119894 and 119892119898119894 are the gate tosource capacitance and transconductance of transistor 119872119894respectively (where 119894 = 1 to 4)

Applying KCL at nodes (b) and (c) in Figure 3 we get

119894in + 1198921198983V1198921199043 = 1198921198981V1198921199041 + 1198941 (1)

1198921198984V1198921199044 + 1198941 = 1198921198982V1198921199042 (2)

Substituting 1198941 from (1) into (2)

119894in + 1198921198983V1198921199043 = 1198921198981V1198921199041 + 1198921198982V1198921199042 minus 1198921198984V1198921199044 (3)

Neglecting channel-length modulation effect the outputcurrent 119894out is

119894out = 1198921198984V1198921199044 (4)

Using (4) in (3) we obtain

119894in + 1198921198983V1198921199043 = 1198921198981V1198921199041 + 1198921198982V1198921199042 minus 119894out (5)

Also on performing nodal analysis at node (c) we get

(V1199044 minus V1198924) 1199041198621198921199044 + 1198921198982V1198921199042 = 119894out (6)

Active and Passive Electronic Components 3

Then V1198921199042 can be obtained as

V1198921199042 = (119894out1198921198982

) + (1199041198621198921199044V1198921199044

1198921198982

) (7)

Substituting V1198921199044 from (4) into (7)

V1198921199042 = (119894out1198921198982

)(1 +1199041198621198921199044

1198921198984

) (8)

At node (d) we have

1198941 = minus1199041198621198921199043V1198921199043 = 1199041198621198921199044V1198921199044 (9)

V1198921199043 = minusV1198921199044 (1198621198921199044

1198621198921199043

) = minus119894out (1198621198921199044

11989211989841198621198921199043

) (10)

Substituting V1198921199043 and V1198921199042 from (10) and (8) respectively into(5)

119894in minus 119894out (11989211989831198621198921199044

11989211989841198621198921199043

)

= 119894out (1198921198981 + 1198921198982) (1198921198984 + 1199041198621198921199044)

11989211989821198921198984

minus 1

(11)

Simplifying (11) to obtain small signal current gain 119860 119894(119904)

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043

times 11990411986211989211990431198621198921199044 (1198921198981 + 1198921198982) + 119892119898111989211989841198621198921199043

+1198921198982

11989211989831198621198921199044minus1

(12)

Let us assume 1198921198981 = 1198921198982 and 1198621198921199043 = 1198621198921199044 = 119862119892119904 then

119860 119894 (119904) =1198921198984

2119904119862119892119904 + 1198921198984 + 1198921198983

(13)

If we choose 1198921198983 = 1198921198984 = 119892119898

119860 119894 (119904) = (119892119898

2119862119892119904

)(1

119904 + 119892119898119862119892119904

) (14)

The bandwidth of conventional LVCCM is given by

1205960 = (119892119898

119862119892119904

) (15)

3 High Frequency LVCCM

The circuit of the modified LVCCM is shown in Figure 4 Animpedance 119885 is inserted between the gates of transistors 1198721

and1198722 [20ndash23] The impedance 119885 can be a resistance (119877) orinductance (119871)

VDDVDD

M1 M2

M3M4

Iin

Iout

VSS

VSS

Z

IbRk

Mk

Figure 4 Compensated LVCCM

Rb

iin

iout

i3

(a)

(c)(b) (d)

Vd3ZVg1

(e)

gm3Vgs3

gm1Vgs1gm2Vgs2

gm4Vgs4Cgs2

Cgs3 Cgs4

Cgs1

Figure 5 Small signal model of the compensated LVCCM

31 Small Signal Analysis The small signal model of themodified LVCCM is shown in Figure 5The analysis has beendone on the basis of same assumptions as taken in Section 2

On applying KCL at nodes (b) and (c) in Figure 5 we get

119894in = 1198921198981V1198921199041 + 1198921198982V1198921199042 minus 119894out minus 1198921198983V1198921199043 (16)

where V1198921199041 is given by

V1198921199041 = V1198921199042 (1

1 + 1199041198621198921199041119885) (17)

From (7) V1198921199042 = (119894out1198921198982)(1 + 11990411986211989211990441198921198984) then (17) can bemodified into

V1198921199041 = (119894out

1198921198982 (1 + 1199041198621198921199041119885))(1 +

1199041198621198921199044

1198921198984

) (18)

4 Active and Passive Electronic Components

Using (7) (10) and (18) and performing some simplificationson (16) to obtain current transfer function of the compen-sated LVCCMThe obtained 119860 119894(119904) is

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043 (1 + 1199041198621198921199041119885)

times 11990421198921198982119862119892119904111986211989211990431198621198921199044119885 + 1199041198621198921199044

times (11989211989811198621198921199043 + 11989211989821198621198921199043 + 119892119898211989211989831198621198921199041119885)

+ 119892119898111989211989841198621198921199043 + 119892119898211989211989831198621198921199044minus1

(19)

311 Bandwidth Extension Using Resistive CompensationMethod On taking 119885 = 119877 (ie resistive compensationmethod) then the current transfer function becomes

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043 (1 + 1199041198621198921199041119877)

times 11990421198921198982119862119892119904111986211989211990431198621198921199044119877 + 1199041198621198921199044

times (11989211989811198621198921199043 + 11989211989821198621198921199043 + 119892119898211989211989831198621198921199041119877)

+ 119892119898111989211989841198621198921199043 + 119892119898211989211989831198621198921199044minus1

(20)

Again if we assume 1198921198981 = 1198921198982 and 1198621198921199043 = 1198621198921199044 = 119862119892119904 then(20) gets transformed into

119860 119894 (119904)

=1198921198984 (1 + 1199041198621198921199041119877)

11990421198621198921199041119862119892119904119877 + 119904 (2119862119892119904 + 11989211989831198621198921199041119877) + 1198921198984 + 1198921198983

(21)

Let us suppose 1198921198983 = 1198921198984 = 119892119898 then 119860 119894(119904) is

119860 119894 (119904) =119892119898 (1 + 119904119862119892119904119877)

11990421198622119892119904119877 + 119904 (2119862119892119904 + 119892119898119862119892119904119877) + 2119892119898

(22)

Equation (22) can be expressed as

119860 119894 (119904)

= (119892119898

119862119892119904

)(119904 + 1119862119892119904119877)

1199042 + 119904 (2119862119892119904119877 + 119892119898119862119892119904) + (21198921198981198622119892119904119877)

(23)

The transfer function of modified LVCCM is of second orderwith one zero and two poles The zero and poles of themodified LVCCM are

1198851 = minus(1

119862119892119904119877)

1198751 = minus(119892119898

119862119892119904

)

1198752 = minus(2

119862119892119904119877)

(24)

At 119877 = 1119892119898 one pole-zero pair (1198751 minus 1198851) gets cancelledand the current transfer function (see (23)) will transforminto single pole low pass system and has bandwidth 1205960119877 =

(2119892119898119862119892119904) which is double of the conventional LVCCM (see(15))

312 Bandwidth Extension Using Inductive Peaking MethodOn taking 119885 = 119904119871 (ie inductive peaking method) thecurrent transfer function of the modified LVCCM is given by

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043 (1 + 11990421198621198921199041119871)

times 11990431198921198982119862119892119904111986211989211990431198621198921199044119871 + 119904

21198921198982119892119898311986211989211990411198621198921199044119871

+ 1199041198621198921199044 (11989211989811198621198921199043 + 11989211989821198621198921199043)

+ 119892119898111989211989841198621198921199043 + 119892119898211989211989831198621198921199044minus1

(25)

The effect of using an inductor on small signal current gaincan be observed from (25) it adds a zero and a pole tothe transfer function which allows more control over thefrequency response of the LVCCM [27]

By definition [28] at 120596 = 12059601003816100381610038161003816119860 119894(1205960)

10038161003816100381610038162= 05

1003816100381610038161003816119860 119894(0)10038161003816100381610038162 (26)

where |119860 119894(0)|2= 1 of a current mirror

From (25) and (26) the bandwidth of the proposedLVCCM is given by

1205960 congradic(

2

119862119892119904119871) minus (

119892119898

119862119892119904

)

2

(27)

It is obvious form (27) that the minus3 dB frequency of theinductively peaked LVCCMdepends on the value of inductor

At119871 = (11986211989211990451198922

119898) the bandwidth of thewideband current

mirror becomes

1205960119871 cong (3119892119898

119862119892119904

) (28)

The bandwidth of the inductively peaked LVCCM which isthrice of the conventional LVCCM for the chosen value ofinductor as shown in (28)

Active and Passive Electronic Components 5

VDD VDD

VDD

M1 M2

M3 M4

Iin

Iout

VSS

RL

M5

Ib1 Ib2

minusA

Figure 6 High compliance current mirror [19]

VDD VDD

VDD

M1 M2

M3M4

Iin

Iout

VSS

RL

M5

Ib1 Ib2

minusA

Z

Figure 7 Proposed wideband high compliance current mirror

Table 1 Circuit parameters

Parameters ValuePower supply (119881DD) 15 VAspect ratio (M1 =M2) (54018) 120583mAspect ratio (M3 =M4) (36018) 120583mAspect ratio (M5) (18018) 120583mBias current (119868

119887) 100120583A

Bias resistance (119877119896) 33MΩ

4 Proposed High Frequency Current Mirror

Due to the low voltage requirement low input impedanceand high accuracy LVCCM is used as a basic building blockin many analog and mixed signal systems Javad Azhari et

350

345

340

335

330

325

32000 10 125 15

Iout

Vout (V)025 05 075

I out

(120583A

)

Figure 8 Variation of output current with respect to output voltageof LVCCM

108 109 1010

25

0

minus25

minus50

minus75

I(d

B)

Frequency (Hz)

Conventional LVCCMProposed LVCCM (R = 1k)

Proposed LVCCM (R = 6k)Proposed LVCCM (L = 20n)

(495GHz minus30dB)(7365GHz minus30dB)(9646GHz minus30dB)(111GHz minus30dB)(1894GHz minus30dB)

Proposed LVCCM (L = 10n)

Figure 9 Frequency responses of designed LVCCM

al [19] have implemented a high compliance current mirror(shown in Figure 6) with a feedback mechanism to eliminatethe offset current produced in LVCCM (when input currentis fed at the drain terminal of transistor1198721 Figure 2)

The performance of current mirror has been improved in[19] by providing a feedback network but its bandwidth isdegraded In this paper we have modified the current mirror[19] by replacing the conventional LVCCMwith the proposedwideband LVCCM to obtain a wideband high performancecurrent mirror The proposed current mirror is shown inFigure 7

The bandwidth of the current mirror is enhanced withno additional DC power dissipation andwithout affecting theDC characteristics such as linearity

5 Simulation Results and Discussion

The circuits are designed in TSMC 018 120583m CMOS technol-ogy and simulated with Spectre simulator of Cadence Thecircuit parameters of LVCCM are given in Table 1

6 Active and Passive Electronic Components

Table 2 Simulated circuit parameters

Parameters M1 M2 M3 M4Transconductance(119892119898times 10minus6) AV 526261 585829 411018 399300

Gate to source capacitance(119862119892119904

times 10minus15) F 11010 15670 7842 7131

Overdrive voltage(119881119892119904

minus 119881th) times 10minus3 V

0522 0519 84454 89751

00 10

200

150

100

50

00

minus50

Vout (V)

I out

(120583A

)

025 05 075

Figure 10 Variation of output current with respect to output voltageof the proposed current mirror

The simulated values of transconductances gate to sourcecapacitances and overdrive voltages of transistors 1198721 11987221198723 and1198724 are given in Table 2

The minus3 dB frequencies of designed current mirrors areobtained at 1 kΩ 6 kΩ 10 nH and 20 nHvalues of impedanceThe peaking in the frequency response depends upon thevalue of impedance used for compensation and this limits thevalue of impedance

Figure 8 is the plot of output voltage requirement ofmod-ified LVCCM In Figure 8 the output current gets saturatedafter 025V and thus it can be concluded that the minimumoutput voltage requirement of the compensated LVCCM is025V

The frequency responses of conventional and widebandLVCCM are shown in Figure 9 The bandwidth is extendedfrom 495GHz to 1110 GHz by using119877 = 6 kΩ and 1894GHzby using 119871 = 20 nH

The input impedance of both conventional and compen-sated LVCCM is approximately 8Ω Table 3 summarizes thebandwidth of conventional and compensated LVCCM

The circuit parameters of the proposed wideband highcompliance current mirror are the same as taken in [19] Theinput impedance of the proposed wideband high frequencycurrentmirror is approximately 8Ω and does not changewiththe modification in the mirror

108 109 1010

Frequency (Hz)

25

0

minus25

minus50

minus75

I(d

B)

(483GHz minus30dB)(7066GHz minus30dB)(9107GHz minus30dB)(1045GHz minus30dB)(1645GHz minus30dB)

Proposed CM (L = 20n)Conventional CM

Proposed CM (R = 6k)

Proposed CM (R = 1k)Proposed CM (L = 10n)

Figure 11 Frequency responses of the conventional and proposedcurrent mirrors (where CM refers to current mirror)

The output current variationwith output voltage is shownin Figure 10The output compliance voltage is 66368mVTheoutput compliance voltages of the conventional and proposedcurrent mirror are the same

TheDCpower dissipation in the proposed currentmirroris the same as that in the conventional one [19] and it is21611 120583W The frequency response of the proposed currentmirror is shown in Figure 11 and it is compared with theconventional current mirror introduced in [19] The BWERof the proposed current mirror is 340 and it is obtained byusing 20 nH inductance

The Monte Carlo simulation of the proposed currentmirror with resistively compensated LVCCM (119877 = 6 kΩ)results in mean deviation of minus49663119890 minus 12 and standarddeviation of 11516119890 minus 9 The current mirror with inductivelypeaked LVCCM (119871 = 20 nH) has shown a mean deviationof minus53247119890 minus 12 and a standard deviation of 11941119890 minus 9 inthe Monte Carlo simulation by using Pspice (OrCAD) Thesimulation results of the proposed current mirror are givenin Table 4

6 Conclusion

In this work the bandwidth of a high compliance currentmirror is extended without affecting its DC characteristicsThe FVF based LVCCM is the basic building block ofthe proposed current mirror therefore in this paper wehave modified LVCCM by using compensation techniquesnamely resistive compensation and inductive peaking TheBWER of high frequency LVCCM is 224 and 382 by using6 kΩ resistance and 20 nH inductance respectively The highfrequency LVCCM is then used to replace the conventionalone in the proposed current mirror The BWER of theproposed wideband high compliance current mirror is 216by using 6 kΩ resistance and 340 by using 20 nH inductancewithout affecting its linearity and input impedance Theanalytical derivations and simulation results are justifyingthe approach used in this paper for bandwidth extensionThe proposed wideband current mirror can be employed

Active and Passive Electronic Components 7

Table 3 Bandwidth comparison of conventional and proposed LVCCM

Performance factorsLVCCM

Conventional Compensated119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 495 736 1110 964 1894

Table 4 Bandwidth comparison of conventional and proposed current mirrors

Performance factorsHigh compliance current mirror

Conventional [19] Proposed119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 483 706 1045 911 1645

in various analog integrated circuits for signal processingapplications

Conflict of Interests

The authors declare that there is no conflict of interestsregarding the publication of this paper

References

[1] S S Mohan M Del Mar Hershenson S P Boyd and T HLee ldquoBandwidth extension in CMOS with optimized on-chipinductorsrdquo IEEE Journal of Solid-State Circuits vol 35 no 3 pp346ndash355 2000

[2] S Galal and B Razavi ldquo40-Gbs amplifier and ESD protectioncircuit in 018-120583m CMOS technologyrdquo IEEE Journal of Solid-State Circuits vol 39 no 12 pp 2389ndash2396 2004

[3] B-D Liu C-Y Huang and H-Y Wu ldquoModular current-modedefuzzification circuit for fuzzy logic controllersrdquo ElectronicsLetters vol 30 no 16 pp 1287ndash1288 1994

[4] H Hassan M Anis and M Elmasry ldquoMOS current modecircuits analysis design and variabilityrdquo IEEE Transactions onVery Large Scale Integration (VLSI) Systems vol 13 no 8 pp885ndash898 2005

[5] M H Cohen and A G Andreou ldquoCurrent-mode subthresholdMOS implementation of the Herault-Jutten autoadaptive net-workrdquo IEEE Journal of Solid-State Circuits vol 27 no 5 pp 714ndash727 1992

[6] C-L Chen W-L Hsieh W-J Lai K-H Chen and C-SWang ldquoA high-speed and precise current sensing circuit withbulk control (CCB) techniquerdquo in Proceedings of the 15th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo08) pp 283ndash287 September 2008

[7] CWang and R Zhao ldquoContinuous-time current-mode currentmirror band pass filters with improved leap-frog structurerdquo inProceedings of the 1st International Congress on Image and SignalProcessing (CISP rsquo08) pp 146ndash148 May 2008

[8] G Souliotis and C Psychalinos ldquoCurrent-mode linear trans-formation filters using current mirrorsrdquo IEEE Transactions onCircuits and Systems II vol 55 no 6 pp 541ndash545 2008

[9] S S Rajput and S S Jamuar ldquoLow voltage low power andhigh performance current conveyors for low voltage analog andmixed mode signal processing applicationsrdquo Analog IntegratedCircuits and Signal Processing vol 41 no 1 pp 21ndash34 2004

[10] E Farshidi and H Asiaban ldquoA new true RMS-to-DC converterusing up-down translinear loop in CMOS technologyrdquo AnalogIntegrated Circuits and Signal Processing vol 70 no 3 pp 385ndash390 2012

[11] E Bruun and P Shah ldquoDynamic range of low-voltage cascodecurrent mirrorsrdquo in Proceedings of the 1995 IEEE InternationalSymposium on Circuits and Systems (ISCAS rsquo95) pp 1328ndash1331May 1995

[12] A Garimella L Garimella J Ramirez-Angulo A J Lopez-Martın and R G Carvajal ldquoLow-voltage high performancecompact all cascode CMOS current mirrorrdquo Electronics Lettersvol 41 no 25 pp 1359ndash1360 2005

[13] F Ledesma R Garcia and J Ramırez-Angulo ldquoComparisonof new and conventional low voltage current mirrorsrdquo inProceedings of the 45th Midwest Symposium on Circuits andSystems pp II49ndashII52 August 2002

[14] J Ramırez-Angulo R G Carvajal andA Torralba ldquoLow supplyvoltage high-performanceCMOS currentmirrorwith low inputand output voltage requirementsrdquo IEEE Transactions on Circuitsand Systems II vol 51 no 3 pp 124ndash129 2004

[15] R G Carvajal J Ramirez-Angulo A Lopez Martin A Tor-ralba J Galan et al ldquoThe flipped voltage follower a useful cellfor low voltage low power circuit designrdquo IEEE Transactions onCircuits and Systems I vol 52 no 7 pp 1276ndash1279 2005

[16] L Lee R M Sidek S S Jamuar and S Khatun ldquoLowvoltage cascode current mirror in a 18 GHz variable gain lownoise amplifier (VGLNA)rdquo in Proceedings of the InternationalSymposium on Communications and Information Technologies(ISCIT rsquo06) pp 1097ndash1100 October 2006

[17] H Sato A Hyogo and K Sekine ldquoA low voltage OTA usingMOSFET in the triode region and cascode current mirrorrdquo inProceedings of the European Conference on Circuit Theory andDesign pp III453ndashIII456 September 2005

[18] Y Cong and R L Geiger ldquoCascode current mirrors with lowinput output and supply voltage requirementsrdquo in Proceedingsof the Midwest Circuits and Systems Conference (MWSCAS rsquo00)vol 1 pp 490ndash493 August 2000

[19] S Javad Azhari H Faraji Baghtash and K Monfaredi ldquoA novelultra-high compliance high output impedance low power veryaccurate high performance current mirrorrdquo MicroelectronicsJournal vol 42 no 2 pp 432ndash439 2011

[20] T Voo and C Toumazou ldquoHigh-speed current mirror resistivecompensation techniquerdquo IEE Electronics Letters vol 31 no 4pp 248ndash250 1995

[21] M Gupta and U Singh ldquoA new flipped voltage followerwith enhanced bandwidth and low output impedancerdquo Analog

8 Active and Passive Electronic Components

Integrated Circuits and Signal Processing vol 72 no 1 pp 279ndash288 2012

[22] S Shekhar J SWalling andD J Allstot ldquoBandwidth extensiontechniques for CMOS amplifiersrdquo IEEE Journal of Solid-StateCircuits vol 41 no 11 pp 2424ndash2438 2006

[23] U Singh and M Gupta ldquoHigh frequency flipped voltage fol-lower with improved performance and its applicationrdquo Micro-electronics Journal vol 44 no 12 pp 1175ndash1192 2013

[24] D J Comer D T Comer J B Perkins K D Clark and A P CGenz ldquoBandwidth extension of high-gain CMOS stages usingactive negative capacitancerdquo in Proceedings of the 13th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo06) pp 628ndash631 December 2006

[25] W Sansen and Z Y Chang ldquoFeedforward compensation tech-niques for high-frequency CMOS amplifiersrdquo IEEE Journal ofSolid-State Circuits vol 25 no 6 pp 1590ndash1595 1990

[26] M Gupta P Aggarwal P Singh and N K Jindal ldquoLow voltagecurrent mirrors with enhanced bandwidthrdquo Analog IntegratedCircuits and Signal Processing vol 59 no 1 pp 97ndash103 2009

[27] M Ebrahimzadeh ldquoA low voltage high quality factor floatinggate tunable active inductor with independent inductance andquality factor tuningrdquo International Journal of Computer andElectrical Engineering vol 3 no 2 pp 180ndash183 2011

[28] S Adel Sedra and C Kenneth Smith Microelectronics CircuitsOxfordUniversity Press NewYork NY USA 5th edition 2005

International Journal of

AerospaceEngineeringHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

RoboticsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Active and Passive Electronic Components

Control Scienceand Engineering

Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

International Journal of

RotatingMachinery

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporation httpwwwhindawicom

Journal ofEngineeringVolume 2014

Submit your manuscripts athttpwwwhindawicom

VLSI Design

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Shock and Vibration

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Civil EngineeringAdvances in

Acoustics and VibrationAdvances in

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Electrical and Computer Engineering

Journal of

Advances inOptoElectronics

Hindawi Publishing Corporation httpwwwhindawicom

Volume 2014

The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014

SensorsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Modelling amp Simulation in EngineeringHindawi Publishing Corporation httpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Chemical EngineeringInternational Journal of Antennas and

Propagation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Navigation and Observation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

DistributedSensor Networks

International Journal of

Active and Passive Electronic Components 3

Then V1198921199042 can be obtained as

V1198921199042 = (119894out1198921198982

) + (1199041198621198921199044V1198921199044

1198921198982

) (7)

Substituting V1198921199044 from (4) into (7)

V1198921199042 = (119894out1198921198982

)(1 +1199041198621198921199044

1198921198984

) (8)

At node (d) we have

1198941 = minus1199041198621198921199043V1198921199043 = 1199041198621198921199044V1198921199044 (9)

V1198921199043 = minusV1198921199044 (1198621198921199044

1198621198921199043

) = minus119894out (1198621198921199044

11989211989841198621198921199043

) (10)

Substituting V1198921199043 and V1198921199042 from (10) and (8) respectively into(5)

119894in minus 119894out (11989211989831198621198921199044

11989211989841198621198921199043

)

= 119894out (1198921198981 + 1198921198982) (1198921198984 + 1199041198621198921199044)

11989211989821198921198984

minus 1

(11)

Simplifying (11) to obtain small signal current gain 119860 119894(119904)

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043

times 11990411986211989211990431198621198921199044 (1198921198981 + 1198921198982) + 119892119898111989211989841198621198921199043

+1198921198982

11989211989831198621198921199044minus1

(12)

Let us assume 1198921198981 = 1198921198982 and 1198621198921199043 = 1198621198921199044 = 119862119892119904 then

119860 119894 (119904) =1198921198984

2119904119862119892119904 + 1198921198984 + 1198921198983

(13)

If we choose 1198921198983 = 1198921198984 = 119892119898

119860 119894 (119904) = (119892119898

2119862119892119904

)(1

119904 + 119892119898119862119892119904

) (14)

The bandwidth of conventional LVCCM is given by

1205960 = (119892119898

119862119892119904

) (15)

3 High Frequency LVCCM

The circuit of the modified LVCCM is shown in Figure 4 Animpedance 119885 is inserted between the gates of transistors 1198721

and1198722 [20ndash23] The impedance 119885 can be a resistance (119877) orinductance (119871)

VDDVDD

M1 M2

M3M4

Iin

Iout

VSS

VSS

Z

IbRk

Mk

Figure 4 Compensated LVCCM

Rb

iin

iout

i3

(a)

(c)(b) (d)

Vd3ZVg1

(e)

gm3Vgs3

gm1Vgs1gm2Vgs2

gm4Vgs4Cgs2

Cgs3 Cgs4

Cgs1

Figure 5 Small signal model of the compensated LVCCM

31 Small Signal Analysis The small signal model of themodified LVCCM is shown in Figure 5The analysis has beendone on the basis of same assumptions as taken in Section 2

On applying KCL at nodes (b) and (c) in Figure 5 we get

119894in = 1198921198981V1198921199041 + 1198921198982V1198921199042 minus 119894out minus 1198921198983V1198921199043 (16)

where V1198921199041 is given by

V1198921199041 = V1198921199042 (1

1 + 1199041198621198921199041119885) (17)

From (7) V1198921199042 = (119894out1198921198982)(1 + 11990411986211989211990441198921198984) then (17) can bemodified into

V1198921199041 = (119894out

1198921198982 (1 + 1199041198621198921199041119885))(1 +

1199041198621198921199044

1198921198984

) (18)

4 Active and Passive Electronic Components

Using (7) (10) and (18) and performing some simplificationson (16) to obtain current transfer function of the compen-sated LVCCMThe obtained 119860 119894(119904) is

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043 (1 + 1199041198621198921199041119885)

times 11990421198921198982119862119892119904111986211989211990431198621198921199044119885 + 1199041198621198921199044

times (11989211989811198621198921199043 + 11989211989821198621198921199043 + 119892119898211989211989831198621198921199041119885)

+ 119892119898111989211989841198621198921199043 + 119892119898211989211989831198621198921199044minus1

(19)

311 Bandwidth Extension Using Resistive CompensationMethod On taking 119885 = 119877 (ie resistive compensationmethod) then the current transfer function becomes

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043 (1 + 1199041198621198921199041119877)

times 11990421198921198982119862119892119904111986211989211990431198621198921199044119877 + 1199041198621198921199044

times (11989211989811198621198921199043 + 11989211989821198621198921199043 + 119892119898211989211989831198621198921199041119877)

+ 119892119898111989211989841198621198921199043 + 119892119898211989211989831198621198921199044minus1

(20)

Again if we assume 1198921198981 = 1198921198982 and 1198621198921199043 = 1198621198921199044 = 119862119892119904 then(20) gets transformed into

119860 119894 (119904)

=1198921198984 (1 + 1199041198621198921199041119877)

11990421198621198921199041119862119892119904119877 + 119904 (2119862119892119904 + 11989211989831198621198921199041119877) + 1198921198984 + 1198921198983

(21)

Let us suppose 1198921198983 = 1198921198984 = 119892119898 then 119860 119894(119904) is

119860 119894 (119904) =119892119898 (1 + 119904119862119892119904119877)

11990421198622119892119904119877 + 119904 (2119862119892119904 + 119892119898119862119892119904119877) + 2119892119898

(22)

Equation (22) can be expressed as

119860 119894 (119904)

= (119892119898

119862119892119904

)(119904 + 1119862119892119904119877)

1199042 + 119904 (2119862119892119904119877 + 119892119898119862119892119904) + (21198921198981198622119892119904119877)

(23)

The transfer function of modified LVCCM is of second orderwith one zero and two poles The zero and poles of themodified LVCCM are

1198851 = minus(1

119862119892119904119877)

1198751 = minus(119892119898

119862119892119904

)

1198752 = minus(2

119862119892119904119877)

(24)

At 119877 = 1119892119898 one pole-zero pair (1198751 minus 1198851) gets cancelledand the current transfer function (see (23)) will transforminto single pole low pass system and has bandwidth 1205960119877 =

(2119892119898119862119892119904) which is double of the conventional LVCCM (see(15))

312 Bandwidth Extension Using Inductive Peaking MethodOn taking 119885 = 119904119871 (ie inductive peaking method) thecurrent transfer function of the modified LVCCM is given by

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043 (1 + 11990421198621198921199041119871)

times 11990431198921198982119862119892119904111986211989211990431198621198921199044119871 + 119904

21198921198982119892119898311986211989211990411198621198921199044119871

+ 1199041198621198921199044 (11989211989811198621198921199043 + 11989211989821198621198921199043)

+ 119892119898111989211989841198621198921199043 + 119892119898211989211989831198621198921199044minus1

(25)

The effect of using an inductor on small signal current gaincan be observed from (25) it adds a zero and a pole tothe transfer function which allows more control over thefrequency response of the LVCCM [27]

By definition [28] at 120596 = 12059601003816100381610038161003816119860 119894(1205960)

10038161003816100381610038162= 05

1003816100381610038161003816119860 119894(0)10038161003816100381610038162 (26)

where |119860 119894(0)|2= 1 of a current mirror

From (25) and (26) the bandwidth of the proposedLVCCM is given by

1205960 congradic(

2

119862119892119904119871) minus (

119892119898

119862119892119904

)

2

(27)

It is obvious form (27) that the minus3 dB frequency of theinductively peaked LVCCMdepends on the value of inductor

At119871 = (11986211989211990451198922

119898) the bandwidth of thewideband current

mirror becomes

1205960119871 cong (3119892119898

119862119892119904

) (28)

The bandwidth of the inductively peaked LVCCM which isthrice of the conventional LVCCM for the chosen value ofinductor as shown in (28)

Active and Passive Electronic Components 5

VDD VDD

VDD

M1 M2

M3 M4

Iin

Iout

VSS

RL

M5

Ib1 Ib2

minusA

Figure 6 High compliance current mirror [19]

VDD VDD

VDD

M1 M2

M3M4

Iin

Iout

VSS

RL

M5

Ib1 Ib2

minusA

Z

Figure 7 Proposed wideband high compliance current mirror

Table 1 Circuit parameters

Parameters ValuePower supply (119881DD) 15 VAspect ratio (M1 =M2) (54018) 120583mAspect ratio (M3 =M4) (36018) 120583mAspect ratio (M5) (18018) 120583mBias current (119868

119887) 100120583A

Bias resistance (119877119896) 33MΩ

4 Proposed High Frequency Current Mirror

Due to the low voltage requirement low input impedanceand high accuracy LVCCM is used as a basic building blockin many analog and mixed signal systems Javad Azhari et

350

345

340

335

330

325

32000 10 125 15

Iout

Vout (V)025 05 075

I out

(120583A

)

Figure 8 Variation of output current with respect to output voltageof LVCCM

108 109 1010

25

0

minus25

minus50

minus75

I(d

B)

Frequency (Hz)

Conventional LVCCMProposed LVCCM (R = 1k)

Proposed LVCCM (R = 6k)Proposed LVCCM (L = 20n)

(495GHz minus30dB)(7365GHz minus30dB)(9646GHz minus30dB)(111GHz minus30dB)(1894GHz minus30dB)

Proposed LVCCM (L = 10n)

Figure 9 Frequency responses of designed LVCCM

al [19] have implemented a high compliance current mirror(shown in Figure 6) with a feedback mechanism to eliminatethe offset current produced in LVCCM (when input currentis fed at the drain terminal of transistor1198721 Figure 2)

The performance of current mirror has been improved in[19] by providing a feedback network but its bandwidth isdegraded In this paper we have modified the current mirror[19] by replacing the conventional LVCCMwith the proposedwideband LVCCM to obtain a wideband high performancecurrent mirror The proposed current mirror is shown inFigure 7

The bandwidth of the current mirror is enhanced withno additional DC power dissipation andwithout affecting theDC characteristics such as linearity

5 Simulation Results and Discussion

The circuits are designed in TSMC 018 120583m CMOS technol-ogy and simulated with Spectre simulator of Cadence Thecircuit parameters of LVCCM are given in Table 1

6 Active and Passive Electronic Components

Table 2 Simulated circuit parameters

Parameters M1 M2 M3 M4Transconductance(119892119898times 10minus6) AV 526261 585829 411018 399300

Gate to source capacitance(119862119892119904

times 10minus15) F 11010 15670 7842 7131

Overdrive voltage(119881119892119904

minus 119881th) times 10minus3 V

0522 0519 84454 89751

00 10

200

150

100

50

00

minus50

Vout (V)

I out

(120583A

)

025 05 075

Figure 10 Variation of output current with respect to output voltageof the proposed current mirror

The simulated values of transconductances gate to sourcecapacitances and overdrive voltages of transistors 1198721 11987221198723 and1198724 are given in Table 2

The minus3 dB frequencies of designed current mirrors areobtained at 1 kΩ 6 kΩ 10 nH and 20 nHvalues of impedanceThe peaking in the frequency response depends upon thevalue of impedance used for compensation and this limits thevalue of impedance

Figure 8 is the plot of output voltage requirement ofmod-ified LVCCM In Figure 8 the output current gets saturatedafter 025V and thus it can be concluded that the minimumoutput voltage requirement of the compensated LVCCM is025V

The frequency responses of conventional and widebandLVCCM are shown in Figure 9 The bandwidth is extendedfrom 495GHz to 1110 GHz by using119877 = 6 kΩ and 1894GHzby using 119871 = 20 nH

The input impedance of both conventional and compen-sated LVCCM is approximately 8Ω Table 3 summarizes thebandwidth of conventional and compensated LVCCM

The circuit parameters of the proposed wideband highcompliance current mirror are the same as taken in [19] Theinput impedance of the proposed wideband high frequencycurrentmirror is approximately 8Ω and does not changewiththe modification in the mirror

108 109 1010

Frequency (Hz)

25

0

minus25

minus50

minus75

I(d

B)

(483GHz minus30dB)(7066GHz minus30dB)(9107GHz minus30dB)(1045GHz minus30dB)(1645GHz minus30dB)

Proposed CM (L = 20n)Conventional CM

Proposed CM (R = 6k)

Proposed CM (R = 1k)Proposed CM (L = 10n)

Figure 11 Frequency responses of the conventional and proposedcurrent mirrors (where CM refers to current mirror)

The output current variationwith output voltage is shownin Figure 10The output compliance voltage is 66368mVTheoutput compliance voltages of the conventional and proposedcurrent mirror are the same

TheDCpower dissipation in the proposed currentmirroris the same as that in the conventional one [19] and it is21611 120583W The frequency response of the proposed currentmirror is shown in Figure 11 and it is compared with theconventional current mirror introduced in [19] The BWERof the proposed current mirror is 340 and it is obtained byusing 20 nH inductance

The Monte Carlo simulation of the proposed currentmirror with resistively compensated LVCCM (119877 = 6 kΩ)results in mean deviation of minus49663119890 minus 12 and standarddeviation of 11516119890 minus 9 The current mirror with inductivelypeaked LVCCM (119871 = 20 nH) has shown a mean deviationof minus53247119890 minus 12 and a standard deviation of 11941119890 minus 9 inthe Monte Carlo simulation by using Pspice (OrCAD) Thesimulation results of the proposed current mirror are givenin Table 4

6 Conclusion

In this work the bandwidth of a high compliance currentmirror is extended without affecting its DC characteristicsThe FVF based LVCCM is the basic building block ofthe proposed current mirror therefore in this paper wehave modified LVCCM by using compensation techniquesnamely resistive compensation and inductive peaking TheBWER of high frequency LVCCM is 224 and 382 by using6 kΩ resistance and 20 nH inductance respectively The highfrequency LVCCM is then used to replace the conventionalone in the proposed current mirror The BWER of theproposed wideband high compliance current mirror is 216by using 6 kΩ resistance and 340 by using 20 nH inductancewithout affecting its linearity and input impedance Theanalytical derivations and simulation results are justifyingthe approach used in this paper for bandwidth extensionThe proposed wideband current mirror can be employed

Active and Passive Electronic Components 7

Table 3 Bandwidth comparison of conventional and proposed LVCCM

Performance factorsLVCCM

Conventional Compensated119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 495 736 1110 964 1894

Table 4 Bandwidth comparison of conventional and proposed current mirrors

Performance factorsHigh compliance current mirror

Conventional [19] Proposed119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 483 706 1045 911 1645

in various analog integrated circuits for signal processingapplications

Conflict of Interests

The authors declare that there is no conflict of interestsregarding the publication of this paper

References

[1] S S Mohan M Del Mar Hershenson S P Boyd and T HLee ldquoBandwidth extension in CMOS with optimized on-chipinductorsrdquo IEEE Journal of Solid-State Circuits vol 35 no 3 pp346ndash355 2000

[2] S Galal and B Razavi ldquo40-Gbs amplifier and ESD protectioncircuit in 018-120583m CMOS technologyrdquo IEEE Journal of Solid-State Circuits vol 39 no 12 pp 2389ndash2396 2004

[3] B-D Liu C-Y Huang and H-Y Wu ldquoModular current-modedefuzzification circuit for fuzzy logic controllersrdquo ElectronicsLetters vol 30 no 16 pp 1287ndash1288 1994

[4] H Hassan M Anis and M Elmasry ldquoMOS current modecircuits analysis design and variabilityrdquo IEEE Transactions onVery Large Scale Integration (VLSI) Systems vol 13 no 8 pp885ndash898 2005

[5] M H Cohen and A G Andreou ldquoCurrent-mode subthresholdMOS implementation of the Herault-Jutten autoadaptive net-workrdquo IEEE Journal of Solid-State Circuits vol 27 no 5 pp 714ndash727 1992

[6] C-L Chen W-L Hsieh W-J Lai K-H Chen and C-SWang ldquoA high-speed and precise current sensing circuit withbulk control (CCB) techniquerdquo in Proceedings of the 15th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo08) pp 283ndash287 September 2008

[7] CWang and R Zhao ldquoContinuous-time current-mode currentmirror band pass filters with improved leap-frog structurerdquo inProceedings of the 1st International Congress on Image and SignalProcessing (CISP rsquo08) pp 146ndash148 May 2008

[8] G Souliotis and C Psychalinos ldquoCurrent-mode linear trans-formation filters using current mirrorsrdquo IEEE Transactions onCircuits and Systems II vol 55 no 6 pp 541ndash545 2008

[9] S S Rajput and S S Jamuar ldquoLow voltage low power andhigh performance current conveyors for low voltage analog andmixed mode signal processing applicationsrdquo Analog IntegratedCircuits and Signal Processing vol 41 no 1 pp 21ndash34 2004

[10] E Farshidi and H Asiaban ldquoA new true RMS-to-DC converterusing up-down translinear loop in CMOS technologyrdquo AnalogIntegrated Circuits and Signal Processing vol 70 no 3 pp 385ndash390 2012

[11] E Bruun and P Shah ldquoDynamic range of low-voltage cascodecurrent mirrorsrdquo in Proceedings of the 1995 IEEE InternationalSymposium on Circuits and Systems (ISCAS rsquo95) pp 1328ndash1331May 1995

[12] A Garimella L Garimella J Ramirez-Angulo A J Lopez-Martın and R G Carvajal ldquoLow-voltage high performancecompact all cascode CMOS current mirrorrdquo Electronics Lettersvol 41 no 25 pp 1359ndash1360 2005

[13] F Ledesma R Garcia and J Ramırez-Angulo ldquoComparisonof new and conventional low voltage current mirrorsrdquo inProceedings of the 45th Midwest Symposium on Circuits andSystems pp II49ndashII52 August 2002

[14] J Ramırez-Angulo R G Carvajal andA Torralba ldquoLow supplyvoltage high-performanceCMOS currentmirrorwith low inputand output voltage requirementsrdquo IEEE Transactions on Circuitsand Systems II vol 51 no 3 pp 124ndash129 2004

[15] R G Carvajal J Ramirez-Angulo A Lopez Martin A Tor-ralba J Galan et al ldquoThe flipped voltage follower a useful cellfor low voltage low power circuit designrdquo IEEE Transactions onCircuits and Systems I vol 52 no 7 pp 1276ndash1279 2005

[16] L Lee R M Sidek S S Jamuar and S Khatun ldquoLowvoltage cascode current mirror in a 18 GHz variable gain lownoise amplifier (VGLNA)rdquo in Proceedings of the InternationalSymposium on Communications and Information Technologies(ISCIT rsquo06) pp 1097ndash1100 October 2006

[17] H Sato A Hyogo and K Sekine ldquoA low voltage OTA usingMOSFET in the triode region and cascode current mirrorrdquo inProceedings of the European Conference on Circuit Theory andDesign pp III453ndashIII456 September 2005

[18] Y Cong and R L Geiger ldquoCascode current mirrors with lowinput output and supply voltage requirementsrdquo in Proceedingsof the Midwest Circuits and Systems Conference (MWSCAS rsquo00)vol 1 pp 490ndash493 August 2000

[19] S Javad Azhari H Faraji Baghtash and K Monfaredi ldquoA novelultra-high compliance high output impedance low power veryaccurate high performance current mirrorrdquo MicroelectronicsJournal vol 42 no 2 pp 432ndash439 2011

[20] T Voo and C Toumazou ldquoHigh-speed current mirror resistivecompensation techniquerdquo IEE Electronics Letters vol 31 no 4pp 248ndash250 1995

[21] M Gupta and U Singh ldquoA new flipped voltage followerwith enhanced bandwidth and low output impedancerdquo Analog

8 Active and Passive Electronic Components

Integrated Circuits and Signal Processing vol 72 no 1 pp 279ndash288 2012

[22] S Shekhar J SWalling andD J Allstot ldquoBandwidth extensiontechniques for CMOS amplifiersrdquo IEEE Journal of Solid-StateCircuits vol 41 no 11 pp 2424ndash2438 2006

[23] U Singh and M Gupta ldquoHigh frequency flipped voltage fol-lower with improved performance and its applicationrdquo Micro-electronics Journal vol 44 no 12 pp 1175ndash1192 2013

[24] D J Comer D T Comer J B Perkins K D Clark and A P CGenz ldquoBandwidth extension of high-gain CMOS stages usingactive negative capacitancerdquo in Proceedings of the 13th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo06) pp 628ndash631 December 2006

[25] W Sansen and Z Y Chang ldquoFeedforward compensation tech-niques for high-frequency CMOS amplifiersrdquo IEEE Journal ofSolid-State Circuits vol 25 no 6 pp 1590ndash1595 1990

[26] M Gupta P Aggarwal P Singh and N K Jindal ldquoLow voltagecurrent mirrors with enhanced bandwidthrdquo Analog IntegratedCircuits and Signal Processing vol 59 no 1 pp 97ndash103 2009

[27] M Ebrahimzadeh ldquoA low voltage high quality factor floatinggate tunable active inductor with independent inductance andquality factor tuningrdquo International Journal of Computer andElectrical Engineering vol 3 no 2 pp 180ndash183 2011

[28] S Adel Sedra and C Kenneth Smith Microelectronics CircuitsOxfordUniversity Press NewYork NY USA 5th edition 2005

International Journal of

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Active and Passive Electronic Components

Control Scienceand Engineering

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Submit your manuscripts athttpwwwhindawicom

VLSI Design

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Shock and Vibration

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Acoustics and VibrationAdvances in

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Volume 2014

The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014

SensorsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Modelling amp Simulation in EngineeringHindawi Publishing Corporation httpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Chemical EngineeringInternational Journal of Antennas and

Propagation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Navigation and Observation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

DistributedSensor Networks

International Journal of

4 Active and Passive Electronic Components

Using (7) (10) and (18) and performing some simplificationson (16) to obtain current transfer function of the compen-sated LVCCMThe obtained 119860 119894(119904) is

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043 (1 + 1199041198621198921199041119885)

times 11990421198921198982119862119892119904111986211989211990431198621198921199044119885 + 1199041198621198921199044

times (11989211989811198621198921199043 + 11989211989821198621198921199043 + 119892119898211989211989831198621198921199041119885)

+ 119892119898111989211989841198621198921199043 + 119892119898211989211989831198621198921199044minus1

(19)

311 Bandwidth Extension Using Resistive CompensationMethod On taking 119885 = 119877 (ie resistive compensationmethod) then the current transfer function becomes

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043 (1 + 1199041198621198921199041119877)

times 11990421198921198982119862119892119904111986211989211990431198621198921199044119877 + 1199041198621198921199044

times (11989211989811198621198921199043 + 11989211989821198621198921199043 + 119892119898211989211989831198621198921199041119877)

+ 119892119898111989211989841198621198921199043 + 119892119898211989211989831198621198921199044minus1

(20)

Again if we assume 1198921198981 = 1198921198982 and 1198621198921199043 = 1198621198921199044 = 119862119892119904 then(20) gets transformed into

119860 119894 (119904)

=1198921198984 (1 + 1199041198621198921199041119877)

11990421198621198921199041119862119892119904119877 + 119904 (2119862119892119904 + 11989211989831198621198921199041119877) + 1198921198984 + 1198921198983

(21)

Let us suppose 1198921198983 = 1198921198984 = 119892119898 then 119860 119894(119904) is

119860 119894 (119904) =119892119898 (1 + 119904119862119892119904119877)

11990421198622119892119904119877 + 119904 (2119862119892119904 + 119892119898119862119892119904119877) + 2119892119898

(22)

Equation (22) can be expressed as

119860 119894 (119904)

= (119892119898

119862119892119904

)(119904 + 1119862119892119904119877)

1199042 + 119904 (2119862119892119904119877 + 119892119898119862119892119904) + (21198921198981198622119892119904119877)

(23)

The transfer function of modified LVCCM is of second orderwith one zero and two poles The zero and poles of themodified LVCCM are

1198851 = minus(1

119862119892119904119877)

1198751 = minus(119892119898

119862119892119904

)

1198752 = minus(2

119862119892119904119877)

(24)

At 119877 = 1119892119898 one pole-zero pair (1198751 minus 1198851) gets cancelledand the current transfer function (see (23)) will transforminto single pole low pass system and has bandwidth 1205960119877 =

(2119892119898119862119892119904) which is double of the conventional LVCCM (see(15))

312 Bandwidth Extension Using Inductive Peaking MethodOn taking 119885 = 119904119871 (ie inductive peaking method) thecurrent transfer function of the modified LVCCM is given by

119860 119894 (119904) = (119894out119894in

)

= 119892119898211989211989841198621198921199043 (1 + 11990421198621198921199041119871)

times 11990431198921198982119862119892119904111986211989211990431198621198921199044119871 + 119904

21198921198982119892119898311986211989211990411198621198921199044119871

+ 1199041198621198921199044 (11989211989811198621198921199043 + 11989211989821198621198921199043)

+ 119892119898111989211989841198621198921199043 + 119892119898211989211989831198621198921199044minus1

(25)

The effect of using an inductor on small signal current gaincan be observed from (25) it adds a zero and a pole tothe transfer function which allows more control over thefrequency response of the LVCCM [27]

By definition [28] at 120596 = 12059601003816100381610038161003816119860 119894(1205960)

10038161003816100381610038162= 05

1003816100381610038161003816119860 119894(0)10038161003816100381610038162 (26)

where |119860 119894(0)|2= 1 of a current mirror

From (25) and (26) the bandwidth of the proposedLVCCM is given by

1205960 congradic(

2

119862119892119904119871) minus (

119892119898

119862119892119904

)

2

(27)

It is obvious form (27) that the minus3 dB frequency of theinductively peaked LVCCMdepends on the value of inductor

At119871 = (11986211989211990451198922

119898) the bandwidth of thewideband current

mirror becomes

1205960119871 cong (3119892119898

119862119892119904

) (28)

The bandwidth of the inductively peaked LVCCM which isthrice of the conventional LVCCM for the chosen value ofinductor as shown in (28)

Active and Passive Electronic Components 5

VDD VDD

VDD

M1 M2

M3 M4

Iin

Iout

VSS

RL

M5

Ib1 Ib2

minusA

Figure 6 High compliance current mirror [19]

VDD VDD

VDD

M1 M2

M3M4

Iin

Iout

VSS

RL

M5

Ib1 Ib2

minusA

Z

Figure 7 Proposed wideband high compliance current mirror

Table 1 Circuit parameters

Parameters ValuePower supply (119881DD) 15 VAspect ratio (M1 =M2) (54018) 120583mAspect ratio (M3 =M4) (36018) 120583mAspect ratio (M5) (18018) 120583mBias current (119868

119887) 100120583A

Bias resistance (119877119896) 33MΩ

4 Proposed High Frequency Current Mirror

Due to the low voltage requirement low input impedanceand high accuracy LVCCM is used as a basic building blockin many analog and mixed signal systems Javad Azhari et

350

345

340

335

330

325

32000 10 125 15

Iout

Vout (V)025 05 075

I out

(120583A

)

Figure 8 Variation of output current with respect to output voltageof LVCCM

108 109 1010

25

0

minus25

minus50

minus75

I(d

B)

Frequency (Hz)

Conventional LVCCMProposed LVCCM (R = 1k)

Proposed LVCCM (R = 6k)Proposed LVCCM (L = 20n)

(495GHz minus30dB)(7365GHz minus30dB)(9646GHz minus30dB)(111GHz minus30dB)(1894GHz minus30dB)

Proposed LVCCM (L = 10n)

Figure 9 Frequency responses of designed LVCCM

al [19] have implemented a high compliance current mirror(shown in Figure 6) with a feedback mechanism to eliminatethe offset current produced in LVCCM (when input currentis fed at the drain terminal of transistor1198721 Figure 2)

The performance of current mirror has been improved in[19] by providing a feedback network but its bandwidth isdegraded In this paper we have modified the current mirror[19] by replacing the conventional LVCCMwith the proposedwideband LVCCM to obtain a wideband high performancecurrent mirror The proposed current mirror is shown inFigure 7

The bandwidth of the current mirror is enhanced withno additional DC power dissipation andwithout affecting theDC characteristics such as linearity

5 Simulation Results and Discussion

The circuits are designed in TSMC 018 120583m CMOS technol-ogy and simulated with Spectre simulator of Cadence Thecircuit parameters of LVCCM are given in Table 1

6 Active and Passive Electronic Components

Table 2 Simulated circuit parameters

Parameters M1 M2 M3 M4Transconductance(119892119898times 10minus6) AV 526261 585829 411018 399300

Gate to source capacitance(119862119892119904

times 10minus15) F 11010 15670 7842 7131

Overdrive voltage(119881119892119904

minus 119881th) times 10minus3 V

0522 0519 84454 89751

00 10

200

150

100

50

00

minus50

Vout (V)

I out

(120583A

)

025 05 075

Figure 10 Variation of output current with respect to output voltageof the proposed current mirror

The simulated values of transconductances gate to sourcecapacitances and overdrive voltages of transistors 1198721 11987221198723 and1198724 are given in Table 2

The minus3 dB frequencies of designed current mirrors areobtained at 1 kΩ 6 kΩ 10 nH and 20 nHvalues of impedanceThe peaking in the frequency response depends upon thevalue of impedance used for compensation and this limits thevalue of impedance

Figure 8 is the plot of output voltage requirement ofmod-ified LVCCM In Figure 8 the output current gets saturatedafter 025V and thus it can be concluded that the minimumoutput voltage requirement of the compensated LVCCM is025V

The frequency responses of conventional and widebandLVCCM are shown in Figure 9 The bandwidth is extendedfrom 495GHz to 1110 GHz by using119877 = 6 kΩ and 1894GHzby using 119871 = 20 nH

The input impedance of both conventional and compen-sated LVCCM is approximately 8Ω Table 3 summarizes thebandwidth of conventional and compensated LVCCM

The circuit parameters of the proposed wideband highcompliance current mirror are the same as taken in [19] Theinput impedance of the proposed wideband high frequencycurrentmirror is approximately 8Ω and does not changewiththe modification in the mirror

108 109 1010

Frequency (Hz)

25

0

minus25

minus50

minus75

I(d

B)

(483GHz minus30dB)(7066GHz minus30dB)(9107GHz minus30dB)(1045GHz minus30dB)(1645GHz minus30dB)

Proposed CM (L = 20n)Conventional CM

Proposed CM (R = 6k)

Proposed CM (R = 1k)Proposed CM (L = 10n)

Figure 11 Frequency responses of the conventional and proposedcurrent mirrors (where CM refers to current mirror)

The output current variationwith output voltage is shownin Figure 10The output compliance voltage is 66368mVTheoutput compliance voltages of the conventional and proposedcurrent mirror are the same

TheDCpower dissipation in the proposed currentmirroris the same as that in the conventional one [19] and it is21611 120583W The frequency response of the proposed currentmirror is shown in Figure 11 and it is compared with theconventional current mirror introduced in [19] The BWERof the proposed current mirror is 340 and it is obtained byusing 20 nH inductance

The Monte Carlo simulation of the proposed currentmirror with resistively compensated LVCCM (119877 = 6 kΩ)results in mean deviation of minus49663119890 minus 12 and standarddeviation of 11516119890 minus 9 The current mirror with inductivelypeaked LVCCM (119871 = 20 nH) has shown a mean deviationof minus53247119890 minus 12 and a standard deviation of 11941119890 minus 9 inthe Monte Carlo simulation by using Pspice (OrCAD) Thesimulation results of the proposed current mirror are givenin Table 4

6 Conclusion

In this work the bandwidth of a high compliance currentmirror is extended without affecting its DC characteristicsThe FVF based LVCCM is the basic building block ofthe proposed current mirror therefore in this paper wehave modified LVCCM by using compensation techniquesnamely resistive compensation and inductive peaking TheBWER of high frequency LVCCM is 224 and 382 by using6 kΩ resistance and 20 nH inductance respectively The highfrequency LVCCM is then used to replace the conventionalone in the proposed current mirror The BWER of theproposed wideband high compliance current mirror is 216by using 6 kΩ resistance and 340 by using 20 nH inductancewithout affecting its linearity and input impedance Theanalytical derivations and simulation results are justifyingthe approach used in this paper for bandwidth extensionThe proposed wideband current mirror can be employed

Active and Passive Electronic Components 7

Table 3 Bandwidth comparison of conventional and proposed LVCCM

Performance factorsLVCCM

Conventional Compensated119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 495 736 1110 964 1894

Table 4 Bandwidth comparison of conventional and proposed current mirrors

Performance factorsHigh compliance current mirror

Conventional [19] Proposed119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 483 706 1045 911 1645

in various analog integrated circuits for signal processingapplications

Conflict of Interests

The authors declare that there is no conflict of interestsregarding the publication of this paper

References

[1] S S Mohan M Del Mar Hershenson S P Boyd and T HLee ldquoBandwidth extension in CMOS with optimized on-chipinductorsrdquo IEEE Journal of Solid-State Circuits vol 35 no 3 pp346ndash355 2000

[2] S Galal and B Razavi ldquo40-Gbs amplifier and ESD protectioncircuit in 018-120583m CMOS technologyrdquo IEEE Journal of Solid-State Circuits vol 39 no 12 pp 2389ndash2396 2004

[3] B-D Liu C-Y Huang and H-Y Wu ldquoModular current-modedefuzzification circuit for fuzzy logic controllersrdquo ElectronicsLetters vol 30 no 16 pp 1287ndash1288 1994

[4] H Hassan M Anis and M Elmasry ldquoMOS current modecircuits analysis design and variabilityrdquo IEEE Transactions onVery Large Scale Integration (VLSI) Systems vol 13 no 8 pp885ndash898 2005

[5] M H Cohen and A G Andreou ldquoCurrent-mode subthresholdMOS implementation of the Herault-Jutten autoadaptive net-workrdquo IEEE Journal of Solid-State Circuits vol 27 no 5 pp 714ndash727 1992

[6] C-L Chen W-L Hsieh W-J Lai K-H Chen and C-SWang ldquoA high-speed and precise current sensing circuit withbulk control (CCB) techniquerdquo in Proceedings of the 15th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo08) pp 283ndash287 September 2008

[7] CWang and R Zhao ldquoContinuous-time current-mode currentmirror band pass filters with improved leap-frog structurerdquo inProceedings of the 1st International Congress on Image and SignalProcessing (CISP rsquo08) pp 146ndash148 May 2008

[8] G Souliotis and C Psychalinos ldquoCurrent-mode linear trans-formation filters using current mirrorsrdquo IEEE Transactions onCircuits and Systems II vol 55 no 6 pp 541ndash545 2008

[9] S S Rajput and S S Jamuar ldquoLow voltage low power andhigh performance current conveyors for low voltage analog andmixed mode signal processing applicationsrdquo Analog IntegratedCircuits and Signal Processing vol 41 no 1 pp 21ndash34 2004

[10] E Farshidi and H Asiaban ldquoA new true RMS-to-DC converterusing up-down translinear loop in CMOS technologyrdquo AnalogIntegrated Circuits and Signal Processing vol 70 no 3 pp 385ndash390 2012

[11] E Bruun and P Shah ldquoDynamic range of low-voltage cascodecurrent mirrorsrdquo in Proceedings of the 1995 IEEE InternationalSymposium on Circuits and Systems (ISCAS rsquo95) pp 1328ndash1331May 1995

[12] A Garimella L Garimella J Ramirez-Angulo A J Lopez-Martın and R G Carvajal ldquoLow-voltage high performancecompact all cascode CMOS current mirrorrdquo Electronics Lettersvol 41 no 25 pp 1359ndash1360 2005

[13] F Ledesma R Garcia and J Ramırez-Angulo ldquoComparisonof new and conventional low voltage current mirrorsrdquo inProceedings of the 45th Midwest Symposium on Circuits andSystems pp II49ndashII52 August 2002

[14] J Ramırez-Angulo R G Carvajal andA Torralba ldquoLow supplyvoltage high-performanceCMOS currentmirrorwith low inputand output voltage requirementsrdquo IEEE Transactions on Circuitsand Systems II vol 51 no 3 pp 124ndash129 2004

[15] R G Carvajal J Ramirez-Angulo A Lopez Martin A Tor-ralba J Galan et al ldquoThe flipped voltage follower a useful cellfor low voltage low power circuit designrdquo IEEE Transactions onCircuits and Systems I vol 52 no 7 pp 1276ndash1279 2005

[16] L Lee R M Sidek S S Jamuar and S Khatun ldquoLowvoltage cascode current mirror in a 18 GHz variable gain lownoise amplifier (VGLNA)rdquo in Proceedings of the InternationalSymposium on Communications and Information Technologies(ISCIT rsquo06) pp 1097ndash1100 October 2006

[17] H Sato A Hyogo and K Sekine ldquoA low voltage OTA usingMOSFET in the triode region and cascode current mirrorrdquo inProceedings of the European Conference on Circuit Theory andDesign pp III453ndashIII456 September 2005

[18] Y Cong and R L Geiger ldquoCascode current mirrors with lowinput output and supply voltage requirementsrdquo in Proceedingsof the Midwest Circuits and Systems Conference (MWSCAS rsquo00)vol 1 pp 490ndash493 August 2000

[19] S Javad Azhari H Faraji Baghtash and K Monfaredi ldquoA novelultra-high compliance high output impedance low power veryaccurate high performance current mirrorrdquo MicroelectronicsJournal vol 42 no 2 pp 432ndash439 2011

[20] T Voo and C Toumazou ldquoHigh-speed current mirror resistivecompensation techniquerdquo IEE Electronics Letters vol 31 no 4pp 248ndash250 1995

[21] M Gupta and U Singh ldquoA new flipped voltage followerwith enhanced bandwidth and low output impedancerdquo Analog

8 Active and Passive Electronic Components

Integrated Circuits and Signal Processing vol 72 no 1 pp 279ndash288 2012

[22] S Shekhar J SWalling andD J Allstot ldquoBandwidth extensiontechniques for CMOS amplifiersrdquo IEEE Journal of Solid-StateCircuits vol 41 no 11 pp 2424ndash2438 2006

[23] U Singh and M Gupta ldquoHigh frequency flipped voltage fol-lower with improved performance and its applicationrdquo Micro-electronics Journal vol 44 no 12 pp 1175ndash1192 2013

[24] D J Comer D T Comer J B Perkins K D Clark and A P CGenz ldquoBandwidth extension of high-gain CMOS stages usingactive negative capacitancerdquo in Proceedings of the 13th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo06) pp 628ndash631 December 2006

[25] W Sansen and Z Y Chang ldquoFeedforward compensation tech-niques for high-frequency CMOS amplifiersrdquo IEEE Journal ofSolid-State Circuits vol 25 no 6 pp 1590ndash1595 1990

[26] M Gupta P Aggarwal P Singh and N K Jindal ldquoLow voltagecurrent mirrors with enhanced bandwidthrdquo Analog IntegratedCircuits and Signal Processing vol 59 no 1 pp 97ndash103 2009

[27] M Ebrahimzadeh ldquoA low voltage high quality factor floatinggate tunable active inductor with independent inductance andquality factor tuningrdquo International Journal of Computer andElectrical Engineering vol 3 no 2 pp 180ndash183 2011

[28] S Adel Sedra and C Kenneth Smith Microelectronics CircuitsOxfordUniversity Press NewYork NY USA 5th edition 2005

International Journal of

AerospaceEngineeringHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

RoboticsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Active and Passive Electronic Components

Control Scienceand Engineering

Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

International Journal of

RotatingMachinery

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporation httpwwwhindawicom

Journal ofEngineeringVolume 2014

Submit your manuscripts athttpwwwhindawicom

VLSI Design

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Shock and Vibration

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Civil EngineeringAdvances in

Acoustics and VibrationAdvances in

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Electrical and Computer Engineering

Journal of

Advances inOptoElectronics

Hindawi Publishing Corporation httpwwwhindawicom

Volume 2014

The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014

SensorsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Modelling amp Simulation in EngineeringHindawi Publishing Corporation httpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Chemical EngineeringInternational Journal of Antennas and

Propagation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Navigation and Observation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

DistributedSensor Networks

International Journal of

Active and Passive Electronic Components 5

VDD VDD

VDD

M1 M2

M3 M4

Iin

Iout

VSS

RL

M5

Ib1 Ib2

minusA

Figure 6 High compliance current mirror [19]

VDD VDD

VDD

M1 M2

M3M4

Iin

Iout

VSS

RL

M5

Ib1 Ib2

minusA

Z

Figure 7 Proposed wideband high compliance current mirror

Table 1 Circuit parameters

Parameters ValuePower supply (119881DD) 15 VAspect ratio (M1 =M2) (54018) 120583mAspect ratio (M3 =M4) (36018) 120583mAspect ratio (M5) (18018) 120583mBias current (119868

119887) 100120583A

Bias resistance (119877119896) 33MΩ

4 Proposed High Frequency Current Mirror

Due to the low voltage requirement low input impedanceand high accuracy LVCCM is used as a basic building blockin many analog and mixed signal systems Javad Azhari et

350

345

340

335

330

325

32000 10 125 15

Iout

Vout (V)025 05 075

I out

(120583A

)

Figure 8 Variation of output current with respect to output voltageof LVCCM

108 109 1010

25

0

minus25

minus50

minus75

I(d

B)

Frequency (Hz)

Conventional LVCCMProposed LVCCM (R = 1k)

Proposed LVCCM (R = 6k)Proposed LVCCM (L = 20n)

(495GHz minus30dB)(7365GHz minus30dB)(9646GHz minus30dB)(111GHz minus30dB)(1894GHz minus30dB)

Proposed LVCCM (L = 10n)

Figure 9 Frequency responses of designed LVCCM

al [19] have implemented a high compliance current mirror(shown in Figure 6) with a feedback mechanism to eliminatethe offset current produced in LVCCM (when input currentis fed at the drain terminal of transistor1198721 Figure 2)

The performance of current mirror has been improved in[19] by providing a feedback network but its bandwidth isdegraded In this paper we have modified the current mirror[19] by replacing the conventional LVCCMwith the proposedwideband LVCCM to obtain a wideband high performancecurrent mirror The proposed current mirror is shown inFigure 7

The bandwidth of the current mirror is enhanced withno additional DC power dissipation andwithout affecting theDC characteristics such as linearity

5 Simulation Results and Discussion

The circuits are designed in TSMC 018 120583m CMOS technol-ogy and simulated with Spectre simulator of Cadence Thecircuit parameters of LVCCM are given in Table 1

6 Active and Passive Electronic Components

Table 2 Simulated circuit parameters

Parameters M1 M2 M3 M4Transconductance(119892119898times 10minus6) AV 526261 585829 411018 399300

Gate to source capacitance(119862119892119904

times 10minus15) F 11010 15670 7842 7131

Overdrive voltage(119881119892119904

minus 119881th) times 10minus3 V

0522 0519 84454 89751

00 10

200

150

100

50

00

minus50

Vout (V)

I out

(120583A

)

025 05 075

Figure 10 Variation of output current with respect to output voltageof the proposed current mirror

The simulated values of transconductances gate to sourcecapacitances and overdrive voltages of transistors 1198721 11987221198723 and1198724 are given in Table 2

The minus3 dB frequencies of designed current mirrors areobtained at 1 kΩ 6 kΩ 10 nH and 20 nHvalues of impedanceThe peaking in the frequency response depends upon thevalue of impedance used for compensation and this limits thevalue of impedance

Figure 8 is the plot of output voltage requirement ofmod-ified LVCCM In Figure 8 the output current gets saturatedafter 025V and thus it can be concluded that the minimumoutput voltage requirement of the compensated LVCCM is025V

The frequency responses of conventional and widebandLVCCM are shown in Figure 9 The bandwidth is extendedfrom 495GHz to 1110 GHz by using119877 = 6 kΩ and 1894GHzby using 119871 = 20 nH

The input impedance of both conventional and compen-sated LVCCM is approximately 8Ω Table 3 summarizes thebandwidth of conventional and compensated LVCCM

The circuit parameters of the proposed wideband highcompliance current mirror are the same as taken in [19] Theinput impedance of the proposed wideband high frequencycurrentmirror is approximately 8Ω and does not changewiththe modification in the mirror

108 109 1010

Frequency (Hz)

25

0

minus25

minus50

minus75

I(d

B)

(483GHz minus30dB)(7066GHz minus30dB)(9107GHz minus30dB)(1045GHz minus30dB)(1645GHz minus30dB)

Proposed CM (L = 20n)Conventional CM

Proposed CM (R = 6k)

Proposed CM (R = 1k)Proposed CM (L = 10n)

Figure 11 Frequency responses of the conventional and proposedcurrent mirrors (where CM refers to current mirror)

The output current variationwith output voltage is shownin Figure 10The output compliance voltage is 66368mVTheoutput compliance voltages of the conventional and proposedcurrent mirror are the same

TheDCpower dissipation in the proposed currentmirroris the same as that in the conventional one [19] and it is21611 120583W The frequency response of the proposed currentmirror is shown in Figure 11 and it is compared with theconventional current mirror introduced in [19] The BWERof the proposed current mirror is 340 and it is obtained byusing 20 nH inductance

The Monte Carlo simulation of the proposed currentmirror with resistively compensated LVCCM (119877 = 6 kΩ)results in mean deviation of minus49663119890 minus 12 and standarddeviation of 11516119890 minus 9 The current mirror with inductivelypeaked LVCCM (119871 = 20 nH) has shown a mean deviationof minus53247119890 minus 12 and a standard deviation of 11941119890 minus 9 inthe Monte Carlo simulation by using Pspice (OrCAD) Thesimulation results of the proposed current mirror are givenin Table 4

6 Conclusion

In this work the bandwidth of a high compliance currentmirror is extended without affecting its DC characteristicsThe FVF based LVCCM is the basic building block ofthe proposed current mirror therefore in this paper wehave modified LVCCM by using compensation techniquesnamely resistive compensation and inductive peaking TheBWER of high frequency LVCCM is 224 and 382 by using6 kΩ resistance and 20 nH inductance respectively The highfrequency LVCCM is then used to replace the conventionalone in the proposed current mirror The BWER of theproposed wideband high compliance current mirror is 216by using 6 kΩ resistance and 340 by using 20 nH inductancewithout affecting its linearity and input impedance Theanalytical derivations and simulation results are justifyingthe approach used in this paper for bandwidth extensionThe proposed wideband current mirror can be employed

Active and Passive Electronic Components 7

Table 3 Bandwidth comparison of conventional and proposed LVCCM

Performance factorsLVCCM

Conventional Compensated119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 495 736 1110 964 1894

Table 4 Bandwidth comparison of conventional and proposed current mirrors

Performance factorsHigh compliance current mirror

Conventional [19] Proposed119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 483 706 1045 911 1645

in various analog integrated circuits for signal processingapplications

Conflict of Interests

The authors declare that there is no conflict of interestsregarding the publication of this paper

References

[1] S S Mohan M Del Mar Hershenson S P Boyd and T HLee ldquoBandwidth extension in CMOS with optimized on-chipinductorsrdquo IEEE Journal of Solid-State Circuits vol 35 no 3 pp346ndash355 2000

[2] S Galal and B Razavi ldquo40-Gbs amplifier and ESD protectioncircuit in 018-120583m CMOS technologyrdquo IEEE Journal of Solid-State Circuits vol 39 no 12 pp 2389ndash2396 2004

[3] B-D Liu C-Y Huang and H-Y Wu ldquoModular current-modedefuzzification circuit for fuzzy logic controllersrdquo ElectronicsLetters vol 30 no 16 pp 1287ndash1288 1994

[4] H Hassan M Anis and M Elmasry ldquoMOS current modecircuits analysis design and variabilityrdquo IEEE Transactions onVery Large Scale Integration (VLSI) Systems vol 13 no 8 pp885ndash898 2005

[5] M H Cohen and A G Andreou ldquoCurrent-mode subthresholdMOS implementation of the Herault-Jutten autoadaptive net-workrdquo IEEE Journal of Solid-State Circuits vol 27 no 5 pp 714ndash727 1992

[6] C-L Chen W-L Hsieh W-J Lai K-H Chen and C-SWang ldquoA high-speed and precise current sensing circuit withbulk control (CCB) techniquerdquo in Proceedings of the 15th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo08) pp 283ndash287 September 2008

[7] CWang and R Zhao ldquoContinuous-time current-mode currentmirror band pass filters with improved leap-frog structurerdquo inProceedings of the 1st International Congress on Image and SignalProcessing (CISP rsquo08) pp 146ndash148 May 2008

[8] G Souliotis and C Psychalinos ldquoCurrent-mode linear trans-formation filters using current mirrorsrdquo IEEE Transactions onCircuits and Systems II vol 55 no 6 pp 541ndash545 2008

[9] S S Rajput and S S Jamuar ldquoLow voltage low power andhigh performance current conveyors for low voltage analog andmixed mode signal processing applicationsrdquo Analog IntegratedCircuits and Signal Processing vol 41 no 1 pp 21ndash34 2004

[10] E Farshidi and H Asiaban ldquoA new true RMS-to-DC converterusing up-down translinear loop in CMOS technologyrdquo AnalogIntegrated Circuits and Signal Processing vol 70 no 3 pp 385ndash390 2012

[11] E Bruun and P Shah ldquoDynamic range of low-voltage cascodecurrent mirrorsrdquo in Proceedings of the 1995 IEEE InternationalSymposium on Circuits and Systems (ISCAS rsquo95) pp 1328ndash1331May 1995

[12] A Garimella L Garimella J Ramirez-Angulo A J Lopez-Martın and R G Carvajal ldquoLow-voltage high performancecompact all cascode CMOS current mirrorrdquo Electronics Lettersvol 41 no 25 pp 1359ndash1360 2005

[13] F Ledesma R Garcia and J Ramırez-Angulo ldquoComparisonof new and conventional low voltage current mirrorsrdquo inProceedings of the 45th Midwest Symposium on Circuits andSystems pp II49ndashII52 August 2002

[14] J Ramırez-Angulo R G Carvajal andA Torralba ldquoLow supplyvoltage high-performanceCMOS currentmirrorwith low inputand output voltage requirementsrdquo IEEE Transactions on Circuitsand Systems II vol 51 no 3 pp 124ndash129 2004

[15] R G Carvajal J Ramirez-Angulo A Lopez Martin A Tor-ralba J Galan et al ldquoThe flipped voltage follower a useful cellfor low voltage low power circuit designrdquo IEEE Transactions onCircuits and Systems I vol 52 no 7 pp 1276ndash1279 2005

[16] L Lee R M Sidek S S Jamuar and S Khatun ldquoLowvoltage cascode current mirror in a 18 GHz variable gain lownoise amplifier (VGLNA)rdquo in Proceedings of the InternationalSymposium on Communications and Information Technologies(ISCIT rsquo06) pp 1097ndash1100 October 2006

[17] H Sato A Hyogo and K Sekine ldquoA low voltage OTA usingMOSFET in the triode region and cascode current mirrorrdquo inProceedings of the European Conference on Circuit Theory andDesign pp III453ndashIII456 September 2005

[18] Y Cong and R L Geiger ldquoCascode current mirrors with lowinput output and supply voltage requirementsrdquo in Proceedingsof the Midwest Circuits and Systems Conference (MWSCAS rsquo00)vol 1 pp 490ndash493 August 2000

[19] S Javad Azhari H Faraji Baghtash and K Monfaredi ldquoA novelultra-high compliance high output impedance low power veryaccurate high performance current mirrorrdquo MicroelectronicsJournal vol 42 no 2 pp 432ndash439 2011

[20] T Voo and C Toumazou ldquoHigh-speed current mirror resistivecompensation techniquerdquo IEE Electronics Letters vol 31 no 4pp 248ndash250 1995

[21] M Gupta and U Singh ldquoA new flipped voltage followerwith enhanced bandwidth and low output impedancerdquo Analog

8 Active and Passive Electronic Components

Integrated Circuits and Signal Processing vol 72 no 1 pp 279ndash288 2012

[22] S Shekhar J SWalling andD J Allstot ldquoBandwidth extensiontechniques for CMOS amplifiersrdquo IEEE Journal of Solid-StateCircuits vol 41 no 11 pp 2424ndash2438 2006

[23] U Singh and M Gupta ldquoHigh frequency flipped voltage fol-lower with improved performance and its applicationrdquo Micro-electronics Journal vol 44 no 12 pp 1175ndash1192 2013

[24] D J Comer D T Comer J B Perkins K D Clark and A P CGenz ldquoBandwidth extension of high-gain CMOS stages usingactive negative capacitancerdquo in Proceedings of the 13th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo06) pp 628ndash631 December 2006

[25] W Sansen and Z Y Chang ldquoFeedforward compensation tech-niques for high-frequency CMOS amplifiersrdquo IEEE Journal ofSolid-State Circuits vol 25 no 6 pp 1590ndash1595 1990

[26] M Gupta P Aggarwal P Singh and N K Jindal ldquoLow voltagecurrent mirrors with enhanced bandwidthrdquo Analog IntegratedCircuits and Signal Processing vol 59 no 1 pp 97ndash103 2009

[27] M Ebrahimzadeh ldquoA low voltage high quality factor floatinggate tunable active inductor with independent inductance andquality factor tuningrdquo International Journal of Computer andElectrical Engineering vol 3 no 2 pp 180ndash183 2011

[28] S Adel Sedra and C Kenneth Smith Microelectronics CircuitsOxfordUniversity Press NewYork NY USA 5th edition 2005

International Journal of

AerospaceEngineeringHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

RoboticsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Active and Passive Electronic Components

Control Scienceand Engineering

Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

International Journal of

RotatingMachinery

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporation httpwwwhindawicom

Journal ofEngineeringVolume 2014

Submit your manuscripts athttpwwwhindawicom

VLSI Design

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Shock and Vibration

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Civil EngineeringAdvances in

Acoustics and VibrationAdvances in

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Electrical and Computer Engineering

Journal of

Advances inOptoElectronics

Hindawi Publishing Corporation httpwwwhindawicom

Volume 2014

The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014

SensorsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Modelling amp Simulation in EngineeringHindawi Publishing Corporation httpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Chemical EngineeringInternational Journal of Antennas and

Propagation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Navigation and Observation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

DistributedSensor Networks

International Journal of

6 Active and Passive Electronic Components

Table 2 Simulated circuit parameters

Parameters M1 M2 M3 M4Transconductance(119892119898times 10minus6) AV 526261 585829 411018 399300

Gate to source capacitance(119862119892119904

times 10minus15) F 11010 15670 7842 7131

Overdrive voltage(119881119892119904

minus 119881th) times 10minus3 V

0522 0519 84454 89751

00 10

200

150

100

50

00

minus50

Vout (V)

I out

(120583A

)

025 05 075

Figure 10 Variation of output current with respect to output voltageof the proposed current mirror

The simulated values of transconductances gate to sourcecapacitances and overdrive voltages of transistors 1198721 11987221198723 and1198724 are given in Table 2

The minus3 dB frequencies of designed current mirrors areobtained at 1 kΩ 6 kΩ 10 nH and 20 nHvalues of impedanceThe peaking in the frequency response depends upon thevalue of impedance used for compensation and this limits thevalue of impedance

Figure 8 is the plot of output voltage requirement ofmod-ified LVCCM In Figure 8 the output current gets saturatedafter 025V and thus it can be concluded that the minimumoutput voltage requirement of the compensated LVCCM is025V

The frequency responses of conventional and widebandLVCCM are shown in Figure 9 The bandwidth is extendedfrom 495GHz to 1110 GHz by using119877 = 6 kΩ and 1894GHzby using 119871 = 20 nH

The input impedance of both conventional and compen-sated LVCCM is approximately 8Ω Table 3 summarizes thebandwidth of conventional and compensated LVCCM

The circuit parameters of the proposed wideband highcompliance current mirror are the same as taken in [19] Theinput impedance of the proposed wideband high frequencycurrentmirror is approximately 8Ω and does not changewiththe modification in the mirror

108 109 1010

Frequency (Hz)

25

0

minus25

minus50

minus75

I(d

B)

(483GHz minus30dB)(7066GHz minus30dB)(9107GHz minus30dB)(1045GHz minus30dB)(1645GHz minus30dB)

Proposed CM (L = 20n)Conventional CM

Proposed CM (R = 6k)

Proposed CM (R = 1k)Proposed CM (L = 10n)

Figure 11 Frequency responses of the conventional and proposedcurrent mirrors (where CM refers to current mirror)

The output current variationwith output voltage is shownin Figure 10The output compliance voltage is 66368mVTheoutput compliance voltages of the conventional and proposedcurrent mirror are the same

TheDCpower dissipation in the proposed currentmirroris the same as that in the conventional one [19] and it is21611 120583W The frequency response of the proposed currentmirror is shown in Figure 11 and it is compared with theconventional current mirror introduced in [19] The BWERof the proposed current mirror is 340 and it is obtained byusing 20 nH inductance

The Monte Carlo simulation of the proposed currentmirror with resistively compensated LVCCM (119877 = 6 kΩ)results in mean deviation of minus49663119890 minus 12 and standarddeviation of 11516119890 minus 9 The current mirror with inductivelypeaked LVCCM (119871 = 20 nH) has shown a mean deviationof minus53247119890 minus 12 and a standard deviation of 11941119890 minus 9 inthe Monte Carlo simulation by using Pspice (OrCAD) Thesimulation results of the proposed current mirror are givenin Table 4

6 Conclusion

In this work the bandwidth of a high compliance currentmirror is extended without affecting its DC characteristicsThe FVF based LVCCM is the basic building block ofthe proposed current mirror therefore in this paper wehave modified LVCCM by using compensation techniquesnamely resistive compensation and inductive peaking TheBWER of high frequency LVCCM is 224 and 382 by using6 kΩ resistance and 20 nH inductance respectively The highfrequency LVCCM is then used to replace the conventionalone in the proposed current mirror The BWER of theproposed wideband high compliance current mirror is 216by using 6 kΩ resistance and 340 by using 20 nH inductancewithout affecting its linearity and input impedance Theanalytical derivations and simulation results are justifyingthe approach used in this paper for bandwidth extensionThe proposed wideband current mirror can be employed

Active and Passive Electronic Components 7

Table 3 Bandwidth comparison of conventional and proposed LVCCM

Performance factorsLVCCM

Conventional Compensated119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 495 736 1110 964 1894

Table 4 Bandwidth comparison of conventional and proposed current mirrors

Performance factorsHigh compliance current mirror

Conventional [19] Proposed119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 483 706 1045 911 1645

in various analog integrated circuits for signal processingapplications

Conflict of Interests

The authors declare that there is no conflict of interestsregarding the publication of this paper

References

[1] S S Mohan M Del Mar Hershenson S P Boyd and T HLee ldquoBandwidth extension in CMOS with optimized on-chipinductorsrdquo IEEE Journal of Solid-State Circuits vol 35 no 3 pp346ndash355 2000

[2] S Galal and B Razavi ldquo40-Gbs amplifier and ESD protectioncircuit in 018-120583m CMOS technologyrdquo IEEE Journal of Solid-State Circuits vol 39 no 12 pp 2389ndash2396 2004

[3] B-D Liu C-Y Huang and H-Y Wu ldquoModular current-modedefuzzification circuit for fuzzy logic controllersrdquo ElectronicsLetters vol 30 no 16 pp 1287ndash1288 1994

[4] H Hassan M Anis and M Elmasry ldquoMOS current modecircuits analysis design and variabilityrdquo IEEE Transactions onVery Large Scale Integration (VLSI) Systems vol 13 no 8 pp885ndash898 2005

[5] M H Cohen and A G Andreou ldquoCurrent-mode subthresholdMOS implementation of the Herault-Jutten autoadaptive net-workrdquo IEEE Journal of Solid-State Circuits vol 27 no 5 pp 714ndash727 1992

[6] C-L Chen W-L Hsieh W-J Lai K-H Chen and C-SWang ldquoA high-speed and precise current sensing circuit withbulk control (CCB) techniquerdquo in Proceedings of the 15th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo08) pp 283ndash287 September 2008

[7] CWang and R Zhao ldquoContinuous-time current-mode currentmirror band pass filters with improved leap-frog structurerdquo inProceedings of the 1st International Congress on Image and SignalProcessing (CISP rsquo08) pp 146ndash148 May 2008

[8] G Souliotis and C Psychalinos ldquoCurrent-mode linear trans-formation filters using current mirrorsrdquo IEEE Transactions onCircuits and Systems II vol 55 no 6 pp 541ndash545 2008

[9] S S Rajput and S S Jamuar ldquoLow voltage low power andhigh performance current conveyors for low voltage analog andmixed mode signal processing applicationsrdquo Analog IntegratedCircuits and Signal Processing vol 41 no 1 pp 21ndash34 2004

[10] E Farshidi and H Asiaban ldquoA new true RMS-to-DC converterusing up-down translinear loop in CMOS technologyrdquo AnalogIntegrated Circuits and Signal Processing vol 70 no 3 pp 385ndash390 2012

[11] E Bruun and P Shah ldquoDynamic range of low-voltage cascodecurrent mirrorsrdquo in Proceedings of the 1995 IEEE InternationalSymposium on Circuits and Systems (ISCAS rsquo95) pp 1328ndash1331May 1995

[12] A Garimella L Garimella J Ramirez-Angulo A J Lopez-Martın and R G Carvajal ldquoLow-voltage high performancecompact all cascode CMOS current mirrorrdquo Electronics Lettersvol 41 no 25 pp 1359ndash1360 2005

[13] F Ledesma R Garcia and J Ramırez-Angulo ldquoComparisonof new and conventional low voltage current mirrorsrdquo inProceedings of the 45th Midwest Symposium on Circuits andSystems pp II49ndashII52 August 2002

[14] J Ramırez-Angulo R G Carvajal andA Torralba ldquoLow supplyvoltage high-performanceCMOS currentmirrorwith low inputand output voltage requirementsrdquo IEEE Transactions on Circuitsand Systems II vol 51 no 3 pp 124ndash129 2004

[15] R G Carvajal J Ramirez-Angulo A Lopez Martin A Tor-ralba J Galan et al ldquoThe flipped voltage follower a useful cellfor low voltage low power circuit designrdquo IEEE Transactions onCircuits and Systems I vol 52 no 7 pp 1276ndash1279 2005

[16] L Lee R M Sidek S S Jamuar and S Khatun ldquoLowvoltage cascode current mirror in a 18 GHz variable gain lownoise amplifier (VGLNA)rdquo in Proceedings of the InternationalSymposium on Communications and Information Technologies(ISCIT rsquo06) pp 1097ndash1100 October 2006

[17] H Sato A Hyogo and K Sekine ldquoA low voltage OTA usingMOSFET in the triode region and cascode current mirrorrdquo inProceedings of the European Conference on Circuit Theory andDesign pp III453ndashIII456 September 2005

[18] Y Cong and R L Geiger ldquoCascode current mirrors with lowinput output and supply voltage requirementsrdquo in Proceedingsof the Midwest Circuits and Systems Conference (MWSCAS rsquo00)vol 1 pp 490ndash493 August 2000

[19] S Javad Azhari H Faraji Baghtash and K Monfaredi ldquoA novelultra-high compliance high output impedance low power veryaccurate high performance current mirrorrdquo MicroelectronicsJournal vol 42 no 2 pp 432ndash439 2011

[20] T Voo and C Toumazou ldquoHigh-speed current mirror resistivecompensation techniquerdquo IEE Electronics Letters vol 31 no 4pp 248ndash250 1995

[21] M Gupta and U Singh ldquoA new flipped voltage followerwith enhanced bandwidth and low output impedancerdquo Analog

8 Active and Passive Electronic Components

Integrated Circuits and Signal Processing vol 72 no 1 pp 279ndash288 2012

[22] S Shekhar J SWalling andD J Allstot ldquoBandwidth extensiontechniques for CMOS amplifiersrdquo IEEE Journal of Solid-StateCircuits vol 41 no 11 pp 2424ndash2438 2006

[23] U Singh and M Gupta ldquoHigh frequency flipped voltage fol-lower with improved performance and its applicationrdquo Micro-electronics Journal vol 44 no 12 pp 1175ndash1192 2013

[24] D J Comer D T Comer J B Perkins K D Clark and A P CGenz ldquoBandwidth extension of high-gain CMOS stages usingactive negative capacitancerdquo in Proceedings of the 13th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo06) pp 628ndash631 December 2006

[25] W Sansen and Z Y Chang ldquoFeedforward compensation tech-niques for high-frequency CMOS amplifiersrdquo IEEE Journal ofSolid-State Circuits vol 25 no 6 pp 1590ndash1595 1990

[26] M Gupta P Aggarwal P Singh and N K Jindal ldquoLow voltagecurrent mirrors with enhanced bandwidthrdquo Analog IntegratedCircuits and Signal Processing vol 59 no 1 pp 97ndash103 2009

[27] M Ebrahimzadeh ldquoA low voltage high quality factor floatinggate tunable active inductor with independent inductance andquality factor tuningrdquo International Journal of Computer andElectrical Engineering vol 3 no 2 pp 180ndash183 2011

[28] S Adel Sedra and C Kenneth Smith Microelectronics CircuitsOxfordUniversity Press NewYork NY USA 5th edition 2005

International Journal of

AerospaceEngineeringHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

RoboticsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Active and Passive Electronic Components

Control Scienceand Engineering

Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

International Journal of

RotatingMachinery

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporation httpwwwhindawicom

Journal ofEngineeringVolume 2014

Submit your manuscripts athttpwwwhindawicom

VLSI Design

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Shock and Vibration

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Civil EngineeringAdvances in

Acoustics and VibrationAdvances in

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Electrical and Computer Engineering

Journal of

Advances inOptoElectronics

Hindawi Publishing Corporation httpwwwhindawicom

Volume 2014

The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014

SensorsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Modelling amp Simulation in EngineeringHindawi Publishing Corporation httpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Chemical EngineeringInternational Journal of Antennas and

Propagation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Navigation and Observation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

DistributedSensor Networks

International Journal of

Active and Passive Electronic Components 7

Table 3 Bandwidth comparison of conventional and proposed LVCCM

Performance factorsLVCCM

Conventional Compensated119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 495 736 1110 964 1894

Table 4 Bandwidth comparison of conventional and proposed current mirrors

Performance factorsHigh compliance current mirror

Conventional [19] Proposed119877 = 1 kΩ 119877 = 6 kΩ 119871 = 10 nH 119871 = 20 nH

Bandwidth (GHz) 483 706 1045 911 1645

in various analog integrated circuits for signal processingapplications

Conflict of Interests

The authors declare that there is no conflict of interestsregarding the publication of this paper

References

[1] S S Mohan M Del Mar Hershenson S P Boyd and T HLee ldquoBandwidth extension in CMOS with optimized on-chipinductorsrdquo IEEE Journal of Solid-State Circuits vol 35 no 3 pp346ndash355 2000

[2] S Galal and B Razavi ldquo40-Gbs amplifier and ESD protectioncircuit in 018-120583m CMOS technologyrdquo IEEE Journal of Solid-State Circuits vol 39 no 12 pp 2389ndash2396 2004

[3] B-D Liu C-Y Huang and H-Y Wu ldquoModular current-modedefuzzification circuit for fuzzy logic controllersrdquo ElectronicsLetters vol 30 no 16 pp 1287ndash1288 1994

[4] H Hassan M Anis and M Elmasry ldquoMOS current modecircuits analysis design and variabilityrdquo IEEE Transactions onVery Large Scale Integration (VLSI) Systems vol 13 no 8 pp885ndash898 2005

[5] M H Cohen and A G Andreou ldquoCurrent-mode subthresholdMOS implementation of the Herault-Jutten autoadaptive net-workrdquo IEEE Journal of Solid-State Circuits vol 27 no 5 pp 714ndash727 1992

[6] C-L Chen W-L Hsieh W-J Lai K-H Chen and C-SWang ldquoA high-speed and precise current sensing circuit withbulk control (CCB) techniquerdquo in Proceedings of the 15th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo08) pp 283ndash287 September 2008

[7] CWang and R Zhao ldquoContinuous-time current-mode currentmirror band pass filters with improved leap-frog structurerdquo inProceedings of the 1st International Congress on Image and SignalProcessing (CISP rsquo08) pp 146ndash148 May 2008

[8] G Souliotis and C Psychalinos ldquoCurrent-mode linear trans-formation filters using current mirrorsrdquo IEEE Transactions onCircuits and Systems II vol 55 no 6 pp 541ndash545 2008

[9] S S Rajput and S S Jamuar ldquoLow voltage low power andhigh performance current conveyors for low voltage analog andmixed mode signal processing applicationsrdquo Analog IntegratedCircuits and Signal Processing vol 41 no 1 pp 21ndash34 2004

[10] E Farshidi and H Asiaban ldquoA new true RMS-to-DC converterusing up-down translinear loop in CMOS technologyrdquo AnalogIntegrated Circuits and Signal Processing vol 70 no 3 pp 385ndash390 2012

[11] E Bruun and P Shah ldquoDynamic range of low-voltage cascodecurrent mirrorsrdquo in Proceedings of the 1995 IEEE InternationalSymposium on Circuits and Systems (ISCAS rsquo95) pp 1328ndash1331May 1995

[12] A Garimella L Garimella J Ramirez-Angulo A J Lopez-Martın and R G Carvajal ldquoLow-voltage high performancecompact all cascode CMOS current mirrorrdquo Electronics Lettersvol 41 no 25 pp 1359ndash1360 2005

[13] F Ledesma R Garcia and J Ramırez-Angulo ldquoComparisonof new and conventional low voltage current mirrorsrdquo inProceedings of the 45th Midwest Symposium on Circuits andSystems pp II49ndashII52 August 2002

[14] J Ramırez-Angulo R G Carvajal andA Torralba ldquoLow supplyvoltage high-performanceCMOS currentmirrorwith low inputand output voltage requirementsrdquo IEEE Transactions on Circuitsand Systems II vol 51 no 3 pp 124ndash129 2004

[15] R G Carvajal J Ramirez-Angulo A Lopez Martin A Tor-ralba J Galan et al ldquoThe flipped voltage follower a useful cellfor low voltage low power circuit designrdquo IEEE Transactions onCircuits and Systems I vol 52 no 7 pp 1276ndash1279 2005

[16] L Lee R M Sidek S S Jamuar and S Khatun ldquoLowvoltage cascode current mirror in a 18 GHz variable gain lownoise amplifier (VGLNA)rdquo in Proceedings of the InternationalSymposium on Communications and Information Technologies(ISCIT rsquo06) pp 1097ndash1100 October 2006

[17] H Sato A Hyogo and K Sekine ldquoA low voltage OTA usingMOSFET in the triode region and cascode current mirrorrdquo inProceedings of the European Conference on Circuit Theory andDesign pp III453ndashIII456 September 2005

[18] Y Cong and R L Geiger ldquoCascode current mirrors with lowinput output and supply voltage requirementsrdquo in Proceedingsof the Midwest Circuits and Systems Conference (MWSCAS rsquo00)vol 1 pp 490ndash493 August 2000

[19] S Javad Azhari H Faraji Baghtash and K Monfaredi ldquoA novelultra-high compliance high output impedance low power veryaccurate high performance current mirrorrdquo MicroelectronicsJournal vol 42 no 2 pp 432ndash439 2011

[20] T Voo and C Toumazou ldquoHigh-speed current mirror resistivecompensation techniquerdquo IEE Electronics Letters vol 31 no 4pp 248ndash250 1995

[21] M Gupta and U Singh ldquoA new flipped voltage followerwith enhanced bandwidth and low output impedancerdquo Analog

8 Active and Passive Electronic Components

Integrated Circuits and Signal Processing vol 72 no 1 pp 279ndash288 2012

[22] S Shekhar J SWalling andD J Allstot ldquoBandwidth extensiontechniques for CMOS amplifiersrdquo IEEE Journal of Solid-StateCircuits vol 41 no 11 pp 2424ndash2438 2006

[23] U Singh and M Gupta ldquoHigh frequency flipped voltage fol-lower with improved performance and its applicationrdquo Micro-electronics Journal vol 44 no 12 pp 1175ndash1192 2013

[24] D J Comer D T Comer J B Perkins K D Clark and A P CGenz ldquoBandwidth extension of high-gain CMOS stages usingactive negative capacitancerdquo in Proceedings of the 13th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo06) pp 628ndash631 December 2006

[25] W Sansen and Z Y Chang ldquoFeedforward compensation tech-niques for high-frequency CMOS amplifiersrdquo IEEE Journal ofSolid-State Circuits vol 25 no 6 pp 1590ndash1595 1990

[26] M Gupta P Aggarwal P Singh and N K Jindal ldquoLow voltagecurrent mirrors with enhanced bandwidthrdquo Analog IntegratedCircuits and Signal Processing vol 59 no 1 pp 97ndash103 2009

[27] M Ebrahimzadeh ldquoA low voltage high quality factor floatinggate tunable active inductor with independent inductance andquality factor tuningrdquo International Journal of Computer andElectrical Engineering vol 3 no 2 pp 180ndash183 2011

[28] S Adel Sedra and C Kenneth Smith Microelectronics CircuitsOxfordUniversity Press NewYork NY USA 5th edition 2005

International Journal of

AerospaceEngineeringHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

RoboticsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Active and Passive Electronic Components

Control Scienceand Engineering

Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

International Journal of

RotatingMachinery

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporation httpwwwhindawicom

Journal ofEngineeringVolume 2014

Submit your manuscripts athttpwwwhindawicom

VLSI Design

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Shock and Vibration

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Civil EngineeringAdvances in

Acoustics and VibrationAdvances in

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Electrical and Computer Engineering

Journal of

Advances inOptoElectronics

Hindawi Publishing Corporation httpwwwhindawicom

Volume 2014

The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014

SensorsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Modelling amp Simulation in EngineeringHindawi Publishing Corporation httpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Chemical EngineeringInternational Journal of Antennas and

Propagation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Navigation and Observation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

DistributedSensor Networks

International Journal of

8 Active and Passive Electronic Components

Integrated Circuits and Signal Processing vol 72 no 1 pp 279ndash288 2012

[22] S Shekhar J SWalling andD J Allstot ldquoBandwidth extensiontechniques for CMOS amplifiersrdquo IEEE Journal of Solid-StateCircuits vol 41 no 11 pp 2424ndash2438 2006

[23] U Singh and M Gupta ldquoHigh frequency flipped voltage fol-lower with improved performance and its applicationrdquo Micro-electronics Journal vol 44 no 12 pp 1175ndash1192 2013

[24] D J Comer D T Comer J B Perkins K D Clark and A P CGenz ldquoBandwidth extension of high-gain CMOS stages usingactive negative capacitancerdquo in Proceedings of the 13th IEEEInternational Conference on Electronics Circuits and Systems(ICECS rsquo06) pp 628ndash631 December 2006

[25] W Sansen and Z Y Chang ldquoFeedforward compensation tech-niques for high-frequency CMOS amplifiersrdquo IEEE Journal ofSolid-State Circuits vol 25 no 6 pp 1590ndash1595 1990

[26] M Gupta P Aggarwal P Singh and N K Jindal ldquoLow voltagecurrent mirrors with enhanced bandwidthrdquo Analog IntegratedCircuits and Signal Processing vol 59 no 1 pp 97ndash103 2009

[27] M Ebrahimzadeh ldquoA low voltage high quality factor floatinggate tunable active inductor with independent inductance andquality factor tuningrdquo International Journal of Computer andElectrical Engineering vol 3 no 2 pp 180ndash183 2011

[28] S Adel Sedra and C Kenneth Smith Microelectronics CircuitsOxfordUniversity Press NewYork NY USA 5th edition 2005

International Journal of

AerospaceEngineeringHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

RoboticsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Active and Passive Electronic Components

Control Scienceand Engineering

Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

International Journal of

RotatingMachinery

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporation httpwwwhindawicom

Journal ofEngineeringVolume 2014

Submit your manuscripts athttpwwwhindawicom

VLSI Design

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Shock and Vibration

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Civil EngineeringAdvances in

Acoustics and VibrationAdvances in

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Electrical and Computer Engineering

Journal of

Advances inOptoElectronics

Hindawi Publishing Corporation httpwwwhindawicom

Volume 2014

The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014

SensorsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Modelling amp Simulation in EngineeringHindawi Publishing Corporation httpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Chemical EngineeringInternational Journal of Antennas and

Propagation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Navigation and Observation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

DistributedSensor Networks

International Journal of

International Journal of

AerospaceEngineeringHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

RoboticsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Active and Passive Electronic Components

Control Scienceand Engineering

Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

International Journal of

RotatingMachinery

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporation httpwwwhindawicom

Journal ofEngineeringVolume 2014

Submit your manuscripts athttpwwwhindawicom

VLSI Design

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Shock and Vibration

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Civil EngineeringAdvances in

Acoustics and VibrationAdvances in

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Electrical and Computer Engineering

Journal of

Advances inOptoElectronics

Hindawi Publishing Corporation httpwwwhindawicom

Volume 2014

The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014

SensorsJournal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Modelling amp Simulation in EngineeringHindawi Publishing Corporation httpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Chemical EngineeringInternational Journal of Antennas and

Propagation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Navigation and Observation

International Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

DistributedSensor Networks

International Journal of