SCOPE 23

Research and Development of High-Microwave-Band Digital RF Circuit Technologies with Next Generation Fine CMOS processes

Kazuya Masu, Tokyo Institute of Technology, Solutions Research Laboratories

Noboru Ishihara Shuhei Amakawa Hiroyuki Ito

Tokyo Institute of Technology, Solutions Research laboratoriesTokyo Institute of Technology, Precision and Intelligence Laboratory

20 22

90nmCMOS 6 30GHz RF

CMOSMEMS RF

RF

Abstract

CMOS CMOS

CLC

CMOSCherry-Hooper

180nm, 90nm, 65nm, 40nm

40 nm CMOS 17.5 dB 8GHz

CMOS (nm)

(mm2)

SCOPE 23

90 nm CMOS ring VCO chip

Injection

-60

-80

-100

-120

-1401 100.10.01

-73

-119

-46 dBInjection

(MHz)

10 GHz

18 m x 30 m

IQ

IQ

90 nm CMOS

Generated RF signal with 90 nm CMOS

100 m

[1] , RF CMOS,

2011 5 , pp.427-432, Vol. 94, No. 5, 2011. [2] Sang-yeop Lee, Shuhei Amakawa, Noboru Ishihara,

and Kazuya Masu, "2.4-10 GHz Low-Noise Injection-Locked Ring Voltage Controlled Oscillator in 90nm Complementary Metal Oxide Semiconductor", Japanese Journal of Applied Physics, Vol. 50, No. 4, pp. 04DE03-1 - 04DE03-5, Apr 2011.

[3] Yutaka Mizuochi, Shuhei Amakawa, Noboru Ishihara, and Kazuya Masu, "Radio Frequency Micro Electro Mechanical Systems Inductor Configurations for A Achieving Large Inductance Variations and High Q-factors," Japanese Journal of Applied Physics, Vol. 49, pp. 05FG02-1 - 05FG02-3, May 2010.

[1] 2009-188066 2009 8 14

[2] 2009-206349 2009 9 7

[3] 2010-109475 2010 5 11

http://www.masu-lab.com/