Renesas Diode Data Book

To our customers,

Old Company Name in Catalogs and Other Documents

On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1st, 2010 Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is

subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.

2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others.

3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of

semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information.

5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations.

6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.

7. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.

“Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.

“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support.

“Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.

8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges.

9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you.

10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.

11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.

12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.

(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.

(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.

www.renesas.com 2009.03

Renesas Diode

Data Book

Renesas Diode Data Book

REJ04G0001-0100

2

3

Contents

Lineup ................................................................................................................................................................ 5

Standard Package Dimensions ............................................................................................................. 12

Nomenclature of Renesas Diodes ....................................................................................................... 21

Renesas Diode Symbols and Their Definitions ............................................................................. 25

Reliability of Renesas Diodes ................................................................................................................ 29

Renesas Diode Manufacturing Process and Quality Control .................................................. 39

Precautions for Application ...................................................................................................................... 42

Standard Taping Specifications ............................................................................................................ 60

Selection Table According to Main Diode Applications ............................................................. 70

Data Sheets .................................................................................................................................................... 72 Variable Capacitance Diodes for VCO .................................................................................................................. 72

Variable Capacitance Diodes for Electronic Tuning ............................................................................................... 124

High Frequency Switching Diodes ......................................................................................................................... 148

PIN Diodes for Antenna Switch ............................................................................................................................. 152

PIN Diodes for Attenuators .................................................................................................................................... 180

Small Signal Diodes .............................................................................................................................................. 190

Schottky Barrier Diodes for Detector and Mixer .................................................................................................... 225

Schottky Barrier Diodes for High Speed Switching ................................................................................................ 259

Diodes for System Protection ................................................................................................................................ 363

Zener Diodes for Surge Absorption ....................................................................................................................... 367

Zener Diodes for Stabilized Power Supply ............................................................................................................ 425 Note: Please check latest data by web site.

4

1. This document is provided for reference purposes only so that Renesas customers may select the appropriate

Renesas products for their use. Renesas neither makes warranties or representations with respect to the

accuracy or completeness of the information contained in this document nor grants any license to any intellectual

property rights or any other rights of Renesas or any third party with respect to the information in this document.

2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out

of the use of any information in this document, including, but not limited to, product data, diagrams, charts,

programs, algorithms, and application circuit examples.

3. You should not use the products or the technology described in this document for the purpose of military

applications such as the development of weapons of mass destruction or for the purpose of any other military

use. When exporting the products or technology described herein, you should follow the applicable export

control laws and regulations, and procedures required by such laws and regulations.

4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and

application circuit examples, is current as of the date this document is issued. Such information, however, is

subject to change without any prior notice. Before purchasing or using any Renesas products listed in this

document, please confirm the latest product information with a Renesas sales office. Also, please pay regular

and careful attention to additional and different information to be disclosed by Renesas such as that disclosed

through our website. (http://www.renesas.com)

5. Renesas has used reasonable care in compiling the information included in this document, but Renesas

assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information

included in this document.

6. When using or otherwise relying on the information in this document, you should evaluate the information in light

of the total system before deciding about the applicability of such information to the intended application.

Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any

particular application and specifically disclaims any liability arising out of the application and use of the

information in this document or Renesas products.

7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products

are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of

which may cause a direct threat to human life or create a risk of human injury or which require especially high

quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare,

combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you

are considering the use of our products for such purposes, please contact a Renesas sales office beforehand.

Renesas shall have no liability for damages arising out of the uses set forth above.

8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:

(1) artificial life support devices or systems

(2) surgical implantations

(3) healthcare intervention (e.g., excision, administration of medication, etc.)

(4) any other purposes that pose a direct threat to human life

Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who

elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas

Technology Corp., its affiliated companies and their officers, directors, and employees against any and all

damages arising out of such applications.

9. You should use the products described herein within the range specified by Renesas, especially with respect to

the maximum rating, operating supply voltage range, movement power voltage range, heat radiation

characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or

damages arising out of the use of Renesas products beyond such specified ranges.

10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific

characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions.

Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or

damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and

software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment

for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer

software alone is very difficult, please evaluate the safety of the final products or system manufactured by you.

11. In case Renesas products listed in this document are detached from the products to which the Renesas products

are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You

should implement safety measures so that Renesas products may not be easily detached from your products.

Renesas shall have no liability for damages arising out of such detachment.

12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written

approval from Renesas.

13. Please contact a Renesas sales office if you have any questions regarding the information contained in this

document, Renesas semiconductor products, or if you have any other inquiries.

Notes regarding these materials

5

Lineup

Variable Capacitance Diodes for VCO Ratings Characteristics

Application Package Part No. VR (V) C (pF) n CVR/CVR rs (Ω) max PageHVU17 15 C1 = 50.0 to 85.0, C3 = 16.1 to 27.3,

C4.5 = 5.23 to 8.84 5.6 min 1/4.5 — 72

HVU350B 15 C1 = 15.5 to 17.0, C4 = 5.0 to 6.0 2.8 min 1/4 0.5 74 HVU355B 15 C1 = 6.4 to 7.2, C4 = 2.55 to 2.95 2.2 min 1/4 0.6 76 HVU359 15 C1 = 24.8 to 29.8, C4 = 6.0 to 8.3 3.0 min 1/4 1.5 78 HVU362 15 C1 = 41.6 to 49.9, C10 = 10.1 to 14.8 3.0 min 1/4 2 80

2.0 min 1/4

URP

HVU383B 15 C1 = 19.0 to 21.0, C4 = 8.5 to 10.0, C7 = 4.5 to 5.5 3.5 min 1/7

0.5 82

HVC350B 15 C1 = 15.5 to 17.0, C4 = 5.0 to 6.0 2.8 min 1/4 0.5 74 HVC355B 15 C1 = 6.4 to 7.2, C4 = 2.55 to 2.95 2.2 min 1/4 0.6 76 HVC358B 15 C1 = 19.5 to 21.0, C4 = 8.0 to 9.3 2.2 min 1/4 0.4 98 HVC359 15 C1 = 24.8 to 29.8, C4 = 6.0 to 8.3 3.0 min 1/4 1.5 — HVC362 15 C1 = 41.6 to 49.9, C4 = 10.1 to 14.8 3.0 min 1/4 2 80 HVC365 15 C1 = 27.05 to 28.55, C4 = 6.05 to 7.55 3.0 min 1/4 1.5 84 HVC368B 10 C1 = 15.0 to 16.5, C2 = 9.0 to 10.2, C3 = 5.0 to 6.0 2.2 min 1/3 1.1 86 HVC374B 10 C1 = 21.5 to 24.0, C2 = 12.5 to 14.5 1.68 to 1.75 1/2 1.2 88 HVC375B 10 C1 = 15.0 to 16.5, C3 = 5.0 to 6.0, C4 = 3.3 to 4.0 4.0 min 1/4 1.1 90

4.3 min 1/4 HVC376B 15 C0.2 = 39.5 to 44.5, C1 = 25.0 to 28.5, C2.3 = 8.75 to 12.05, C4 = 4.8 to 6.8 3.55 min 0.2/2.3

0.8 92

2.0 min 1/4 HVC383B 15 C1 =19.0 to 21.0, C4 = 8.5 to 10.0, C7 = 4.5 to 5.53.5 min 1/7

0.5 82

HVC385B 15 C0.5 = 7.2 to 7.7, C2.5 = 2.7 to 3.2 2.43 to 2.57 0.5/2.5 0.75 94

UFP

HVC386B 15 C1 = 43.0 to 49.0, C4 = 18.5 to 25.5 1.8 min 1/4 0.85 96 HVD350B 15 C1 = 15.5 to 17.0, C4 = 5.0 to 6.0 2.8 min 1/4 0.5 74 HVD355B 15 C1 = 6.4 to 7.2, C4 = 2.55 to 2.95 2.2 min 1/4 0.6 76 HVD358B 15 C1 = 19.5 to 21.0, C4 = 8.0 to 9.3 2.2 min 1/4 0.4 98 HVD359 15 C1 = 24.8 to 29.8, C4 = 6.0 to 8.3 3.0 min 1/4 1.5 78 HVD362 15 C1 = 41.6 to 49.9, C4 = 10.1 to 14.8 3.0 min 1/4 2 80 HVD365 15 C1 = 27.05 to 28.55, C4 = 6.05 to 7.55 3.0 min 1/4 1.5 84 HVD368B 10 C1 = 15.0 to 16.5, C2 = 9.0 to 10.2, C3 = 5.0 to 6.0 2.2 min 1/3 1.1 86 HVD374B 10 C1 = 21.5 to 24.0, C2 = 12.5 to 14.5 1.68 to 1.75 1/2 1.2 88

4.3 min 1/4 HVD376B 15 C0.2 = 39.5 to 44.5, C1 = 25.0 to 28.5, C2.3 = 8.75 to 12.05, C4 = 4.8 to 6.8 3.55 min 0.2/2.3

0.8 92

HVD385B 15 C0.5 = 7.2 to 7.7, C2.5 = 2.7 to 3.2 2.43 to 2.57 0.5/2.5 0.75 94 HVD396C 10 C1 = 14.6 to 15.8, C4 = 5.2 to 5.8 2.62 min 1/4 0.4 100

SFP

HVD399C 10 C0.5 = 18.5 to 20.0, C2.5 = 7.3 to 8.6 2.30 to 2.46 0.5/2.5 0.4 102HVL355C 15 C1 = 6.62 to 7.02, C4 = 2.60 to 2.95 2.35 to 2.55 1/4 0.6 104HVL358C 15 C1 = 19.5 to 20.9, C4 = 8.30 to 8.95 2.20 to 2.43 1/4 0.4 106HVL368C 10 C1 = 15.0 to 16.5, C2 = 9.0 to 10.2, C3 = 5.0 to 6.0 2.2 min 1/3 1.1 86 HVL375C 10 C1 = 15.0 to 16.5, C3 = 5.0 to 6.0, C4 = 3.3 to 4.0 4.0 min 1/4 1.1 90 HVL385C 15 C0.5 = 7.3 to 7.7, C2.5 = 2.90 to 3.18 2.43 to 2.57 0.5/2.5 0.75 108HVL396C 10 C1 = 14.6 to 15.8, C4 = 5.2 to 5.8 2.62 min 1/4 0.4 100HVL399C 10 C0.5 = 18.5 to 20.0, C2.5 = 7.3 to 8.6 2.30 to 2.46 0.5/2.5 0.4 102RKV603KL 15 C0.5 = 7.38 to 7.92, C2.5 = 3.26 to 3.58 2.1 to 2.4 0.5/2.5 0.75 110RKV604KL 15 C1 = 2.35 to 2.70, C3 = 1.22 to 1.42 1.73 to 2.10 1/3 0.7 112RKV605KL 10 C0.5 = 18.5 to 20.0, C2.5 = 8.55 to 9.45 2.02 to 2.26 0.5/2.5 0.4 114RKV606KL 15 C1 = 3.18 to 3.50, C3 = 1.63 to 1.80 1.81 to 2.08 1/3 0.75 116RKV607KL 15 C1 = 2.03 to 2.20, C3 = 1.05 to 1.20 1.75 to 2.00 1/3 0.85 118

EFP

RKV608KL 15 C1 = 4.18 to 4.52, C4 = 1.85 to 2.11 2.13 to 2.27 1/4 0.75 120RKV600KP 15 C1 = 6.62 to 7.02, C4 = 2.60 to 2.95 2.35 to 2.55 1/4 0.6 104RKV601KP 15 C0.5 = 7.3 to 7.7, C2.5 = 2.90 to 3.18 2.43 to 2.57 0.5/2.5 0.75 108RKV603KP 15 C0.5 = 7.38 to 7.92, C2.5 = 3.26 to 3.58 2.1 to 2.4 0.5/2.5 0.75 110RKV604KP 15 C1 = 2.35 to 2.70, C3 = 1.22 to 1.42 1.73 to 2.10 1/3 0.7 112RKV605KP 10 C0.5 = 18.5 to 20.0, C2.5 = 8.55 to 9.45 2.02 to 2.26 0.5/2.5 0.4 114RKV606KP 15 C1 = 3.18 to 3.50, C3 = 1.63 to 1.80 1.81 to 2.08 1/3 0.75 116RKV607KP 15 C1 = 2.03 to 2.20, C3 = 1.05 to 1.20 1.75 to 2.00 1/3 0.85 118

MP6

RKV608KP 15 C1 = 4.18 to 4.52, C4 = 1.85 to 2.11 2.13 to 2.27 1/4 0.75 120

VCO

CMPAK-4 HVB350BYP 15 C1 = 15.5 to 17.0, C4 = 5.0 to 6.0 2.8 min 1/4 0.5 122

Lineup

6

Variable Capacitance Diodes for Electronic Tuning Ratings Characteristics

Application Package Part No. VR (V) C (pF) n CVR/CVR rs (Ω) max PageSFP RKV651KK 15 C0.2 = 29.5 to 33.0, C2.3 = 7.80 to 10.7 2.9 to 4.1 0.2/2.3 0.6 —

RKV650KL 15 C0.5 = 7.2 to 7.8, C2.5 = 2.05 to 2.35 3.25 to 3.70 0.5/2.5 0.75 124 RKV651KL 15 C0.2 = 29.5 to 33.0, C2.3 = 7.80 to 10.7 2.9 to 4.1 0.2/2.3 0.6 — RKV652KL 10 C1 = 2.9 to 3.3, C3 = 1.12 to 1.30 2.28 to 2.90 1/3 1.1 126

EFP

RKV653KL 10 C1 = 2.6 to 2.9, C3 = 0.97 to 1.08 2.40 to 3.05 1/3 1.8 128 RKV650KP 15 C0.5 = 7.2 to 7.8, C2.5 = 2.05 to 2.35 3.25 to 3.70 0.5/2.5 0.75 124 RKV652KP 10 C1 = 2.9 to 3.3, C3 = 1.12 to 1.30 2.28 to 2.90 1/3 1.1 126

Digital audio

MP6

RKV653KP 10 C1 = 2.6 to 2.9, C3 = 0.97 to 1.08 2.40 to 3.05 1/3 1.8 128 URP HVU316 30 C1 = 5.16 to 7.22, C25 = 0.48 to 0.76 9.0 min 1/25 1.2 — UFP HVC316 30 C1 = 5.16 to 7.22, C25 = 0.48 to 0.76 9.0 min 1/25 2.2 130

BS/CS Tuner

Tuning Tuner

SFP HVD316 30 C1 = 5.16 to 7.22, C25 = 0.48 to 0.76 9.0 min 1/25 2.2 — HVU202B 32 C2 = 14.15 to 15.75, C25 = 2.06 to 2.35 6.3 min 2/25 0.57 — HVU326C 15 C1 = 13.0 to 16.0, C10 = 2.0 to 2.3 6.0 min 1/10 0.6 132

URP

RKV500KG 34 C2 = 14.15 to 15.75, C25 = 1.89 to 2.18 6.3 min 2/25 0.57 134 HVC202B 32 C2 = 14.15 to 15.75, C25 = 2.06 to 2.35 6.3 min 2/25 0.57 — HVC326C 15 C1 = 13.0 to 16.0, C10 = 2.0 to 2.3 6.0 min 1/10 0.6 132

UFP

RKV500KJ 34 C2 = 14.15 to 15.75, C25 = 1.89 to 2.18 6.3 min 2/25 0.57 134 HVD326C 15 C1 = 13.0 to 16.0, C10 = 2.0 to 2.3 6.0 min 1/10 0.6 132

UHF Tuning

SFP RKV500KK 34 C2 = 14.15 to 15.75, C25 = 1.89 to 2.18 6.3 min 2/25 0.57 134 HVU300C 34 C2 = 39.5 to 47.0, C25 = 2.6 to 3.0 14.5 min 2/25 1.1 — HVU306C 34 C2 = 29.5 to 34.0, C25 = 2.57 to 2.90 11.0 min 2/25 0.75 — HVU307 32 C2 = 32.2 to 37.5, C25 = 2.57 to 3.00 12.0 min 2/25 0.85 — HVU327C 15 C1 = 30.5 to 33.5, C10 = 2.6 to 2.9 11.0 min 1/10 0.8 136 HVU328C 15 C1 = 41.0 to 45.0, C10 = 2.6 to 2.9 14.5 min 1/10 1.2 138 HVU363B 32 C1 = 36.0 to 42.0, C28 = 2.36 to 2.75 13.7 min 1/28 0.75 — RKV501KG 34 C2 = 29.5 to 34.0, C25 = 2.45 to 2.78 11.0 min 2/25 0.75 140

URP

RKV502KG 34 C2 = 41.5 to 47.0, C25 = 2.6 to 3.0 14.5 min 2/25 1.1 142 HVC300C 34 C2 = 39.5 to 47.0, C25 = 2.6 to 3.0 14.5 min 2/25 1.1 — HVC306C 34 C2 = 29.5 to 34.0, C25 = 2.57 to 2.90 11.0 min 2/25 0.75 — HVC307 32 C2 = 32.2 to 37.5, C25 = 2.57 to 3.00 12.0 min 2/25 0.85 — HVC327C 15 C1 = 30.5 to 33.5, C10 = 2.6 to 2.9 11.0 min 1/10 0.8 136 HVC328C 15 C1 = 41.0 to 45.0, C10 = 2.6 to 2.9 14.5 min 1/10 1.2 138 HVC363B 32 C1 = 36.0 to 42.0, C28 = 2.36 to 2.75 13.7 min 1/28 0.75 — RKV501KJ 34 C2 = 29.5 to 34.0, C25 = 2.45 to 2.78 11.0 min 2/25 0.75 140

UFP

RKV502KJ 34 C2 = 41.5 to 47.0, C25 = 2.6 to 3.0 14.5 min 2/25 1.1 142 HVD327C 15 C1 = 30.5 to 33.5, C10 = 2.6 to 2.9 11.0 min 1/10 0.8 136 HVD328C 15 C1 = 41.0 to 45.0, C10 = 2.6 to 2.9 14.5 min 1/10 1.2 138 RKV501KK 34 C2 = 29.5 to 34.0, C25 = 2.45 to 2.78 11.0 min 2/25 0.75 140

VHF Tuning

SFP

RKV502KK 34 C2 = 41.5 to 47.0, C25 = 2.6 to 3.0 14.5 min 2/25 1.1 142

TV Tuner

AFC UFP HVC308A 35 C2 = 13.7 to 15.9, C20 = 1.65 to 2.06 7.12 min 2/20 0.95 144 FM Tuner

Tuning MPAK HVM16 14 C2 = 43.0 to 48.1, C8 = 24.6 to 29.2 1.65 to 1.75 2/8 — 146

High Frequency Switching Diodes Ratings Characteristics

Application Package Part No. VR (V)

IF (mA)

Pd (mW)

VF (V)

max.IF

(mA)

C (pF)max.

VR (V)

f (MHz)

rf (Ω)

max. IF

(mA) f

(MHz) PageMPAK HSM2694 35 — 150 1.0 10 1.2 6 1 0.9 2 100 — URP HSU277 35 — 150 1.0 10 1.2 6 1 0.7 2 100 —

HSC277 35 — 150 1.0 10 1.2 6 1 0.7 2 100 — UFP RKS151KJ 35 — 150 1.0 10 0.8 6 1 0.7 2 100 148 RKS150KK 35 — 150 1.0 10 1.2 6 1 0.7 2 100 148

High frequency switching

SFP RKS151KK 35 — 150 1.0 10 0.8 6 1 0.7 2 100 150

Lineup

7

PIN Diodes for Antenna Switch Ratings Characteristics


IF (mA)

Pd (mW)

VF (V)

max.IF

(mA)

C (pF)max.

VR (V)

f (MHz)

rf (Ω)

max. IF

(mA) f

(MHz) PageHVU131 60 100 150 1 10 0.8 1 1 1 10 100 152 URP HVU145 60 50 150 0.9 2 0.45 1 1 1.8 10 100 154 HVC131 60 100 150 1 10 0.8 1 1 1 10 100 152 HVC132 60 100 150 1 10 0.5 1 1 2 10 100 156 HVC142A 30 100 150 1 10 0.35 1 1 1.3 10 100 158

UFP

HVC145 60 50 150 0.9 2 0.45 1 1 1.8 10 100 154 HVD131 60 100 150 1 10 0.8 1 1 1 10 100 152 HVD132 60 100 150 1 10 0.5 1 1 2 10 100 156 HVD142A 30 100 150 1 10 0.35 1 1 1.3 10 100 158 HVD144A 30 100 150 0.9 2 0.43 1 1 1.8 2 100 160 HVD145 60 50 150 0.9 2 0.45 1 1 1.8 10 100 154

2.5 typ 2 100 HVD147 30 100 150 1 10 0.31 1 1 1.5 10 100

162

SFP

RKP201KK 30 100 150 0.9 2 0.35 1 1 2 2 100 164 HVL142A 30 100 100 1 10 0.35 1 1 1.3 10 100 158 HVL144A 30 100 100 0.9 2 0.43 1 1 1.8 2 100 160 HVL145 60 50 100 0.9 2 0.45 1 1 1.8 10 100 154

2.5 typ 2 100 HVL147 30 100 100 1 10 0.31 1 1 1.5 10 100

162

EFP

RKP201KL 30 100 100 0.9 2 0.35 1 1 2 2 100 164 RKP200KP 30 100 100 1 10 0.35 1 1 1.3 10 100 166 MP6 RKP204KP 30 100 100 1 10 0.35 1 1 1.1 10 100 168 RKP450KE 30 100 100 1 10 0.35 1 1 1.3 10 100 170 RKP451KE 30 100 100 1 10 0.35 1 1 1.3 10 100 172 RKP452KE 30 100 100 1 10 0.35 1 1 1.3 10 100 174 RKP453KE 30 100 100 1 10 0.35 1 1 1.3 10 100 176

MP6-8

RKP454KE 30 100 100 1 10 0.35 1 1 1.3 10 100 178 1 10 1.3 10 100 RKP400KS 30 100 100

0.9 2 0.35 1 1

2 2 100 —

0.35 1 1 1.3 10 2.5 2

RKP401KS 30 100 100 1 10 0.31 1 1

1.5 10

100 —

RKP402KS 30 100 100 1 10 0.35 1 1 1.3 10 100 — 1 10 1.3 10 RKP403KS 30 100 100

0.9 2 0.35 1 1

2 2 100 —

1 10 1.3 10 RKP404KS 30 100 100 0.9 2

0.35 1 1 2 2

100 —

RKP405KS 30 100 100 1 10 0.35 1 1 1.3 10 100 — 1 10 1.3 10 RKP406KS 30 100 100

0.9 2 0.35 1 1

2 2 100 —

1 10 1.3 10 RKP407KS 30 100 100 0.9 2

0.35 1 1 2 2

100 —

2.5 2 RKP408KS 30 100 100 1 10 0.31 1 1 1.5 10

100 —

2.5 2 1 10 0.311.5 10

RKP409KS 30 100 100

0.9 2 0.35

1 1

2 2

100 —

1 10 1.3 10 RKP410KS 30 100 100 0.9 2

0.35 1 1 2 2

100 —

RKP411KS 30 100 100 1 10 0.35 1 1 1.3 10 100 — RKP412KS 30 100 100 1 10 0.35 1 1 1.3 10 100 —

2.5 2 RKP413KS 30 100 100 1 10 0.31 1 1 1.5 10

100 —

1 10 1.3 10 RKP414KS 30 100 100 0.9 2

0.35 1 1 2 2

100 —

Antenna switching

MFP12

RKP415KS 30 100 100 1 10 0.35 1 1 1.3 10 100 —

Lineup

8

PIN Diodes for Attenuators Ratings Characteristics


IF (mA)

Pd (mW)

VF (V)

max.IF

(mA)

C (pF) max.

VR (V)

f (MHz)

rf (Ω)

max. IF

(mA) f

(MHz) PageHVM14 50 50 100 1 50 0.25 typ 50 1 7 10 100 180 HVM14S 50 50 100 1 50 0.25 typ 50 1 7 10 100 180 HVM14SR 50 50 100 1 50 0.25 typ 50 1 7 10 100 180 HVM187S 60 50 100 1 10 2.4 0 1 5.5 10 100 182 HVM187WK 60 50 100 1 10 2.4 0 1 5.5 10 100 182

MPAK

HVM189S 60 50 100 1 10 1.8 0 1 5.5 10 100 — HVL192 30 50 100 1 10 0.3 1 1 3.2 10 100 — RKP300KL 30 50 100 1 10 0.25 1 1 3.7 10 100 184

EFP

RKP301KL 30 100 100 1 10 0.3 20 1 2.5 10 100 — HVD191 30 100 150 1 10 0.37 1 1 2.5 10 100 — RKP300KK 30 50 100 1 10 0.25 1 1 3.7 10 100 184

SFP

RKP301KK 30 100 150 1 10 0.3 20 1 2.5 10 100 — HVC190 50 50 150 1 50 0.35 50 1 5 10 100 186 RKP300KJ 30 50 100 1 10 0.25 1 1 3.7 10 100 184

UFP

RKP301KJ 30 100 150 1 10 0.3 20 1 2.5 10 100 — URP HVU187 60 50 100 1 10 2.4 0 1 5.5 10 100 182

HVB14S 50 50 100 1 50 0.25 typ 50 1 7 10 100 180 HVB190S 50 50 100 1 50 0.35 50 1 5 10 100 — RKP300WKQE 30 50 100 1 10 0.25 20 1 3.7 10 100 188

CMPAK

RKP301WKQE 30 100 100 1 10 0.3 20 1 2.5 10 100 —

Attenuator

CMPAK-4 HVB187YP 60 50 100 1 10 2.4 0 1 5.5 10 100 —

Small Signal Diodes Ratings Characteristics


IO (mA)

IFSM (A)

Pd (mW)

VF (V)

max.IF

(mA)

trr (ns)max.

IF (mA)

C (pF) max.

VR (V)

f (MHz) Page

1S2075(K) 30 100 0.6 250 0.8 10 8 10 3.5 1 1 — 1S2076 30 150 1 250 0.8 10 8 10 3 1 1 190

DO-35

1S2076A 60 150 1 250 0.8 10 8 10 3 1 1 192 1SS119 30 150 1 250 0.8 10 3.5 10 3 1 1 194 1SS120 60 150 1 250 0.8 10 3.5 10 3 1 1 196 1SS270 30 150 1 250 0.8 10 3.5 10 3 1 1 — 1SS270A 60 150 1 250 0.8 10 3.5 10 3 1 1 —

MHD

HSS104 35 110 0.4 300 1.2 100 3 10 3 0.5 1 — LLD HSK120 60 150 4 — 0.8 10 3 10 3 0 1 —

HSM123 80 100 4 — 1.2 100 3 10 4 0 1 198 HSM124S 80 100 4 — 1.2 100 100 10 4 0 1 200 HSM221C 80 100 4 — 1.2 100 3 10 2 0 1 202 HSM223C 80 100 4 — 1.2 100 3 10 2 0 1 204 HSM2836C 80 100 4 — 1.2 100 20 10 4 0 1 206

MPAK

HSM2838C 80 100 4 — 1.2 100 3 10 2 0 1 208 HSU119 80 100 4 — 1.2 100 3 10 2 0 1 210 URP RKS100KG 80 — 4 — 1.2 100 3 10 2 0 1 —

UFP HSC119 80 100 4 — 1.2 100 3 10 2 0 1 210 SFP HSD119 80 100 4 — 1.2 100 3 10 2 0 1 210

HSB123 80 100 4 — 1.2 100 3 10 2 0 1 212 HSB124S 80 100 4 — 1.2 100 100 10 4 0 1 214 HSB2836 80 100 4 — 1.2 100 20 10 4 0 1 216

High speed switching

CMPAK

HSB2838 80 100 4 — 1.2 100 3 10 2 0 1 218 1SS81 150 200 1 400 1 100 100 30 1.5 typ 0 1 — 1SS82 200 200 1 400 1 100 100 30 1.5 typ 0 1 —

DO-35

1SS83 250 200 1 400 1 100 100 30 1.5 typ 0 1 — HSS81 150 150 1 400 1 100 100 30 1.5 typ 0 1 — HSS82 200 150 1 400 1 100 100 30 1.5 typ 0 1 —

MHD

HSS83 250 150 1 400 1 100 100 30 1.5 typ 0 1 — LLD HSK83 250 150 1 — 1 100 100 30 1.5 typ 0 1 —

HSM83 250 100 2 — 1.2 100 100 30 3 0 1 — MPAK HSM122 400 150 1 150 1.2 100 20(μs

) 30 10 0 1 —

HSU83 250 100 2 — 1.2 100 100 30 3 0 1 220 URP RKS101KG 400 100 2 — 1.5 100 100 30 3 0 1 222

CMPAK HSB83 250 100 2 — 1.2 100 100 30 3 0 1 —

High voltage switching

CMPAK-4 HSB83YP 250 100 2 — 1.2 100 100 30 3 0 1 —

Note: (K) indicates high-reliability products.

Lineup

9

Schottky Barrier Diodes for Detector and Mixer Ratings Characteristics

Application Package Part No.

VR [VRRM]

(V)

IO [IF]

(mA)

IF (mA) min.

VF (V)

VF (V)

max. IF

(mA)

C (pF) max.

VR (V)

f (MHz) Page

HSB226S [25] [50] — — 0.33 1 2.8 1 1 225 HSB226WK [25] [50] — — 0.33 1 2.8 1 1 225 HSB276AS [5] 30 35 0.5 — — 0.9 0.5 1 227 HSB276S 3 30 35 0.5 — — 0.9 0.5 1 229 HSB278S 30 30 — — 0.3 1 1.5 1 1 — HSB285S 2 5 — — 0.15 0.1 0.3typ 0.5 1 — HSB88AS 10 15 — — 0.42 1 0.8 0 1 231 HSB88WA 10 15 — — 0.42 1 0.8 0 1 231

CMPAK

HSB88WK 10 15 — — 0.42 1 0.8 0 1 231 HSB226YP [25] [50] — — 0.33 1 2.8 1 1 — HSB276AYP [5] 30 35 0.5 — — 0.85 0.5 1 —

CMPAK-4

HSB88YP 10 15 — — 0.42 1 0.8 0 1 231 HSC226 [25] [50] — — 0.33 1 2.8 1 1 233 HSC276 3 30 35 0.5 — — 0.85 0.5 1 235 HSC276A [5] 30 35 0.5 — — 0.85 0.5 1 237 HSC278 30 30 — — 0.3 1 1.5 1 1 239 HSC285 2 5 — — 0.15 0.1 0.3typ 0.5 1 241 HSC88 10 15 — — 0.42 1 0.8 0 1 243

UFP

RKD700KJ 30 50 — — 0.43 10 2.8 1 1 245 HSD226 [25] [50] — — 0.33 1 2.8 1 1 233 HSD276A [5] 30 35 0.5 — — 0.85 0.5 1 237 HSD278 30 30 — — 0.3 1 1.5 1 1 239 HSD88 10 15 — — 0.42 1 0.8 0 1 243

SFP

RKD700KK 30 50 — — 0.43 10 2.8 1 1 245 HSL226 [25] [50] — — 0.33 1 2.80 1 1 233 HSL276A 3 30 35 0.5 — — 0.85 0.5 1 — HSL278 30 30 — — 0.30 1 1.50 1 1 — HSL285 2 5 — — 0.15 0.1 0.3typ 0.5 1 241 RKD700KL 30 50 — — 0.43 10 2.8 1 1 245 RKD702KL [30] [50] — — 0.35 1 2.50 1 1 247

EFP

RKD703KL [30] [50] — — 0.35 20 5 1 1 249 HSM198S 10 30 4.5 1.0 1.1 5 1.5 1 1 — HSM226S [25] [50] — — 0.33 1 2.8 1 1 — HSM276AS [5] 30 35 0.5 — — 0.9 0.5 1 253 HSM276ASR [5] 30 35 0.5 — — 0.9 0.5 1 253 HSM276S 3 30 35 0.5 — — 0.9 0.5 1 255 HSM276SR 3 30 35 0.5 — — 0.9 0.5 1 255 HSM88AS 10 15 — — 0.42 1 0.85 0 1 257 HSM88ASR 10 15 — — 0.42 1 0.85 0 1 257 HSM88WA 10 15 — — 0.42 1 0.85 0 1 257

MPAK

HSM88WK 10 15 — — 0.42 1 0.85 0 1 257 HSU226 [25] [50] — — 0.33 1 2.80 1 1 233 HSU227 [25] 50 — — 0.35 1 3.0 1 1 — HSU276 3 30 35 0.5 — — 0.85 0.5 1 235 HSU276A [5] 30 35 0.5 — — 0.85 0.5 1 237 HSU285 2 5 — — 0.15 0.1 0.3typ 0.5 1 241

URP

HSU88 10 15 — — 0.42 1 0.8 0 1 243 RKD702KP [30] [50] — — 0.35 1 2.50 1 1 247 RKD703KP [30] [50] — — 0.35 20 5 1 1 249 RKD750KP 2 5 — — 0.15 0.1 0.3typ 0.5 1 241

Detector and mixer

MP6

RKD751KP 3 30 35 0.5 — — 1.0 0.5 1 251

Lineup

10

Schottky Barrier Diodes for High Speed Switching Ratings Characteristics


ElementsS: SingleD: Double

VRRM (V)

IO [IF] (A)

VF (V)

max. IF

(A)

IR (μA) max.

VR (V) Page

HRB0103A S 30 0.1 0.44 0.1 50 30 259 HRB0103B D 30 0.1 0.44 0.1 50 30 262 V HRB0502A S 20 [0.5] 0.40 0.5 200 20 265

CMPAK

V RKR0202AQE D 20 0.2 0.40 0.1 50 20 268 CMPAK-4 HSB0104YP D 40 [0.1] 0.58 0.1 50 40 271

HRC0103A S 30 0.1 0.44 0.1 50 30 273 HRC0103C S 30 0.1 0.60 0.1 0.1 5 276 V HRC0201A S 15 0.2 0.39 0.2 50 6 279 HRC0203B S 30 0.2 0.52 0.2 10 30 282 HRC0203C S 30 0.2 0.45 0.2 30 10 285 RKR0303AKJ S 30 [300] 0.42 0.3 200 30 288

UFP

RKR0303BKJ S 30 [300] 0.5 0.3 50 30 291 HRD0103C S 30 0.1 0.60 0.1 0.1 5 294 SFP HRD0203C S 30 0.2 0.45 0.2 30 10 297

EFP HRL0103C S 30 0.1 0.60 0.1 0.1 5 300 V HRW0202A D 20 0.2 0.40 0.1 50 20 303 V HRW0202B D 20 0.2 0.42 0.1 10 20 306 HRW0203A S 30 0.2 0.50 0.2 50 30 309 HRW0203B S 30 0.2 0.50 0.2 50 30 312 V HRW0302A S 20 0.3 0.40 0.3 100 20 315 V HRW0502A S 20 0.5 0.40 0.5 200 20 318 HRW0503A S 30 0.5 0.55 0.5 50 30 321 HRW0702A S 20 [0.7] 0.43 0.7 200 20 324

MPAK

HRW0703A S 30 [0.7] 0.50 0.7 100 30 327 HRU0103A S 30 0.1 0.44 0.1 50 30 330 HRU0103C S 30 0.1 0.60 0.1 0.1 5 294 HRU0203A S 30 0.2 0.50 0.2 50 30 333

URP

HRU0302A S 20 0.3 0.40 0.3 100 20 336 V HRV103A S 30 1 0.36 0.7 1000 30 339 HRV103B S 30 1 0.45 0.7 100 30 342 RKR0503AKH S 30 0.5 0.37 0.5 500 30 345 RKR0503BKH S 30 0.5 0.44 0.5 100 30 348 V RKR0505AKH S 50 0.5 0.46 0.5 400 20 351 RKR0505BKH S 50 0.5 0.60 0.5 40 30 354 RKR0703BKH S 30 0.7 0.55 0.7 50 30 357

High speed switching

TURP

RKR104BKH S 40 1 0.55 0.7 50 40 360

Note: V: Low-forward-voltage products

Diodes for System Protection Ratings Characteristics


VR [VRRM]

(V) IO

(mA) IFSM (A)

VF (V)

max. IF

(mA)

IR (μA) max.

VR (V) Page

HSM107S 8 50 0.5 0.3 10 30 5 363 System protection

MPAK HSM126S [20] 200 2 0.35 10 2 5 365

Lineup

11

Zener Diodes for Surge Absorption Ratings Characteristics


Pd (mW)

VZ (V) IZ (mA)

C (pF) max. VR (V)

ESD (kV)min. Page

RKZ6.2B2KP 100 5.86 to 6.53 5 — — 30 367 RKZ6.8B2KP 100 6.47 to 7.14 5 — — 30 367

MP6

RKZ8.2B2KP 100 7.76 to 8.64 5 — — 30 367 * HZL6.2Z4 100 5.9 to 6.5 5 4.0 0 8 369 EFP * HZL6.8Z4 100 6.47 to 7.0 5 4.0 0 8 371 * HZD6.2Z4 150 5.90 to 6.50 5 4.0 0 8 373 SFP * HZD6.8Z4 150 6.47 to 7.00 5 4.0 0 8 375

UFP HZC Series 150 1.90 to 38.00 2 to 5 — — 20 to 30 — * HZU5.6Z 200 5.31 to 5.92 5 8.5 0 8 — * HZU6.2Z 200 5.9 to 6.5 5 8.5 0 — 377 HZU6.8Z 200 6.47 to 7.0 5 25 0 20 380

URP

HZU-G Series 200 4.84 to 13.96 5 — — 30 — HZM3.3WA 200 3.10 to 3.50 5 — — 30 — * HZM6.2ZMWA 200 5.9 to 6.5 5 8.5 0 13 383 * HZM6.2Z4MWA 200 5.9 to 6.5 5 (4) 0 8 386 HZM6.8ZMWA 200 6.47 to 7.0 5 25 0 20 388 * HZM6.8Z4MWA 200 6.47 to 7.0 5 (4) 0 8 391 HZM6.8MWA 200 6.47 to 7.0 5 130 0 30 393

MPAK

HZM27WA 200 25.1 to 28.9 2 (27) 0 30 395 * HZM5.6ZFA 200 5.31 to 5.92 5 8.5 0 8 — * HZM6.2ZMFA 200 5.9 to 6.5 5 8.5 0 13 398 * HZM6.2Z4MFA 200 5.9 to 6.5 5 (4) 0 8 401 HZM6.8MFA 200 6.47 to 7.0 5 130 0 30 403 HZM6.8ZMFA 200 6.47 to 7.0 5 25 0 25 405 * HZM6.8Z4MFA 200 6.47 to 7.0 5 (4) 0 8 408

MPAK-5

HZM27FA 200 25.1 to 28.9 2 (27) 0 30 410 CMPAK HZB6.8MWA 200 6.47 to 7.0 5 130 0 30 —

RKZ6.2Z4MFAKT 150 5.90 to 6.50 5 (4.0)/ 4.5 0 8 412 RKZ6.8ZMFAKT 150 6.47 to 7.0 5 25 0 25 414

Surge absorption

VSON-5

RKZ6.8Z4MFAKT 150 6.47 to 7.0 5 (4.0)/ 4.5 0 8 417 SFP RKZ6.8TKK 150 5.80 to 7.80 5 — — 25 419 UFP RKZ6.8TKJ 150 5.80 to 7.80 5 — — 25 419 URP RKZ27TKG 200 26.2 to 31.5 1 30 0 30 421

Bidirectional Surge absorption

CMPAK RKZ27TWAQE 200 26.2 to 31.5 1 30 0 30 423

Note: *: Low capacitance version

Zener Diodes for Stabilized Power Supply Ratings Characteristics

Application Package Part No. Pd (mW) VZ (V) IZ (mA) Page

DO-35 HZ Series 500 1.6 to 38.0 5 to 2 425 HZS Series 400 1.6 to 38.0 5 to 2 430 MHD HZS-N Series 400 1.88 to 38.52 5 —

LLD HZK Series 500 1.9 to 38.0 5 to 2 435 MPAK HZM-N Series 200 1.9 to 38.0 5 to 2 —

HZU Series 200 1.9 to 38.0 5 to 2 439 URP RKZ-KG Series 200 1.9 to 38.0 5 to 2 444

UFP RKZ-KJ Series 150 1.9 to 38.0 5 to 2 449 SFP RKZ-KK Series 150 1.9 to 38.0 5 to 2 454

General

EFP RKZ-KL Series 100 1.9 to 38.0 5 to 2 458 HZ-L Series 400 5.2 to 38.0 0.5 462 DO-35 HZ-LL Series 250 1.6 to 5.3 0.5 466 HZS-L Series 400 5.2 to 38.0 0.5 468 MHD HZS-LL Series 250 1.6 to 5.3 0.5 472 HZK-L Series 400 5.2 to 38.0 0.5 475 LLD HZK-LL Series 250 1.6 to 5.3 0.5 479 HZU-L Series 150 5.2 to 14.3 0.5 482

Low noise

URP HZU-LL Series 150 1.6 to 5.3 0.5 486

12

Standard Package Dimensions

HE

L

φD

1.25 1.35 1.45φD

3.30 3.50 3.60

- 0.35 -L

HE

Dimension in Millimeters

Min Nom Max

Reference

Symbol

⎯ 0.027g

MASS[Typ.]

LLD / LLDVGLZZ0002ZA-A

RENESAS CodeJEITA Package Code Previous CodePackage Name

LLD

L E L

Min Nom Max

φb - 0.4

φD - 2.0

E - - 2.4

L 26.0 - -

-

-

φb

φD

Dimension in MillimetersReference

Symbol

⎯ 0.084g

MASS[Typ.]

MHD / MHDVGRZZ0002ZC-A


MHD


13

L E L

Min Nom Max

φb - 0.5

φD - 2.0

E - - 4.2

L 26.0 - -

-

-

φbφD


Symbol

SC-40 0.13g

MASS[Typ.]

DO-35 / DO-35VGRZZ0002ZB-A


DO-35

A

c

E HE

D

b

e1b

Pattern of terminal position areas

φ

A

b

c

D

E

HE

e1

0.25

0.44

0.08

0.55

0.75

0.95

0.30

0.47

0.13

0.60

0.40

1.00

0.80

1.00

0.50

0.35

0.18

0.65

0.85

1.05


Symbol Min Nom Max

bφ

⎯ 0.0007g

MASS[Typ.]

EFP / EFPVPXSF0002ZA-A


EFP


14

⎯ 0.0010g

MASS[Typ.]

SFP / SFPVPUSF0002ZB-A

RENESAS CodeJEITA Package Code Previous Code

A

c

E HE

D

b

e1b


φ

A

b

c

D

E

HE

e1

0.25

0.50

0.08

0.55

0.90

1.30

0.30

0.13

0.60

0.50

1.40

1.00

1.40

0.55

0.35

0.18

0.65

1.10

1.50


Symbol Min Nom Max

bφ

Package Name

SFP

A

c

E HE

D

b

e1

l1

l1


b2

A

b

c

D

E

HE

b2

e1

l1

0.25

0.50

0.08 0.13

0.70

1.10

1.50

0.30

0.60

0.80

0.80

1.70

1.20

1.60

0.60

0.70

0.35

0.18

0.90

1.30

1.70


Symbol Min Nom Max

SC-79 0.0016g

MASS[Typ.]

UFP / UFPVPWSF0002ZA-A


UFP


15

b

D

E HE

A1

A2

b2

l1

l1

e1


0 - 0.1A1

0.75 0.90 1.05A2

0.15 0.30 0.45

1.10 1.25 1.40

b

1.55 1.70 1.85

2.35 2.65

- 0.80

2.50

-

- 2.30 -

D

- 0.80 -

E

HE

b2

e1

l1


Min Nom Max

Reference

Symbol

SC-76A 0.004g

MASS[Typ.]

URP / URPVPTSP0002ZA-A


URP

A

b

c

D

E

HE

Lp2

e1

0.55

0.08

1.15

1.80

2.40

0.60

1.25

1.40

1.90

2.50

0.55

0.65

0.18

1.45

2.00

2.60

1.30 1.50

Lp1 0.500.40 0.60


Symbol Min Nom Max

b3

b2

l2

l1

0.5

0.8

0.8

1.1

2.0

b1 0.75 0.80

0.13

0.85

⎯ 0.004g

MASS[Typ.]

TURP/TURPVPUSF0002ZC-A


TURP

A

c

E HE

D

b

b1

l1

l2


b3

b2

e1

Lp1

Lp2

b

b1


16


e

e1

l1

b2

D

A A

b

E HE

e

A2 A

A1

Q

c

L

A 0.8 - 1.1

A1 0 - 0.1

A2 0.8 0.9 1.0

b 0.25 0.3 0.4

c 0.1 0.16 0.26

D 1.8 2.0 2.2

E 1.15 1.25 1.35

- 0.65 -e

HE 1.8 2.1 2.4

L 0.425- -

b2 - - 0.45

- 1.5 -e1

l1 - - 0.9

Q - 0.2 -


Min Nom Max

Reference

Symbol

SC-70 0.006g

MASS[Typ.]

CMPAK / CMPAKVPTSP0003ZB-A


b

c

A — A Section

Package Name

CMPAK

e

e1

l1

b2

D

A A

b

E HE

e

A

A1

Q

c

L

e


A 0.8 0.9 1.0

A1 0 - 0.1

b 0.25 0.3 0.35

c 0.1 0.16 0.26

D 1.8 2.0 2.2

E 1.15 1.25 1.35

-

- -

0.65 -e

HE 1.9 2.1 2.3

L 0.425

b2 - - 0.45

- 1.5 -e1

l1 - - 0.9

Q - 0.2 -


Min Nom Max

Reference

Symbol

SC-82 0.006g

MASS[Typ.]

CMPAK-4(D) / CMPAK-4(D)VPTSP0004ZB-A


b

c

A — A Section

Package Name

CMPAK-4


17


e

e1

l1

b2

b

c

A — A Section

D

A A

b

E HE

e

A

A1

Q c

L

A 1.0 - 1.3

A1 0 - 0.1

b 0.35 0.4 0.5

c 0.1 0.16 0.26

D 2.7 - 3.1

E 1.35 1.5 1.65

- 0.95 -

- -

e

HE 2.2 2.8 3.0

L 0.65

b2 - - 0.55

- 1.95 -e1

l1 - - 1.05

Q - 0.3 -


Min Nom Max

Reference

Symbol

SC-59A 0.011g

MASS[Typ.]

MPAK(D) / MPAK(D)VPLSP0003ZC-A


MPAK

c

LL1

A2 A

A1


e

e1

l1

b2

D

A A

b

E HE

e

A 1.0 - 1.4

A1 0 - 0.1

A2 1.0 1.1 1.3

b 0.3 0.4 0.5

c 0.11 0.16 0.26

D 2.7 2.9 3.1

E 1.5 1.6 1.8

- 0.95 -e

HE 2.5 2.8 3.0

L - 0.6

L1 0.15 -

-

-

b2 - - 0.55

- 2.15 -e1

l1 - - 0.85


Min Nom Max

Reference

Symbol

SC-74A 0.013g

MASS[Typ.]

MPAK-5 / MPAK-5VPLSP0005ZC-A


b

c

A — A Section

Package Name

MPAK-5


18

L

e

e1

l1

b2

l1

A2 A

A1

D

b

E HE

e

(0.45)


A 1.0 - 1.3

A1 0 - 0.1

A2 - 1.1 -

- 0.4 -b

- 4.71 -

- 1.5 -

- 1.27 -

- -

D

2.2 2.8 3.0

E

0.65

e

HE

L

- 0.8 -

- 2.6 -

- 1.0 -

b2

e1

l1


Min Nom Max

Reference

Symbol

⎯ 0.020g

MASS[Typ.]

MOP / MOPVPTSP0008DB-A


MOP

A1

0.44

0

0.47 0.50

- 0.05

A2

0.13 0.18 0.23

0.10 0.13 0.16

b

c

2.70

1.10 1.20 1.30

D

E

- 0.43 -e

- 0.28 -

- 1.1 -

- 0.25 -

b2

e1

l1


Min Nom Max

Reference

Symbol

0.23Lp

0.05 0.15

0.18 0.28

1.30 1.40 1.50

2.60 2.80

0.10

HE

L

⎯ 0.004g

MASS[Typ.]

MFP12VPUSF0012ZA-A


MFP12

e

l1b2

A2

A1

D

b

EHE

e

e

e1


L

c

Lp


19

Min Nom Max

b 0.25 0.27

D 0.29 0.32

E 0.59 0.62 0.65

L 0.17 0.19 0.21

0.35

0.29

A 0.27 0.30 0.33


Symbol

⎯ 0.00015g

MASS[Typ.]

MP6VPXSN0002ZB-A


MP6

D

b

E

L

L

A

b1 0.31

e1 0.38

l10.23


e1

b1

l1

l1

⎯ 0.0008 g

MASS[Typ.]

MP6-8VPXSN0008ZA-A


MP6-8

A

e1

Ll1

E

be


e2

D

b1

e3


Symbol Min

0.17

0.64

1.60

0.27

0.25

Max

1.66

0.70

— —

— —

— —

— —

— —

— —

0.21

0.33

0.29b

D

E

L

A

l1

b1

e2

e

e3

e1

Nom

0.19

0.67

1.63

0.30

0.27

0.19

0.42

0.27

0.42

0.38

0.38


20

e

b

EHE

D

c

L

e e

e1

l1

b2

A

A

b

c

D

E

e

HE

L

b2

e1

l1

0.07

1.55

1.1

1.55 1.6

0.12

1.6

1.2

0.5

0.2

0.3

1.35

0.45

0.60

0.3

0.22

0.50 0.55

0.15 0.2

1.65

1.3

1.65


Symbol Min Nom Max


⎯ 0.002g

MASS[Typ.]

VSON-5VPUSN0005KB-A


VSON-5

21

Nomenclature of Renesas Diodes

1. Diode Nomenclature

1.1 Basic Principles of Setting the Type Number (1) Naming of silicon diodes is based on JEITA (EIAJ-ED-4001). Such devices are registered with the Japan

Electronics and Information Technology Industries Association (JEITA) and named by the JEITA. (2) Basic configuration

Grade (1-2 letters)

• Same product type or characteristics

division with A, B, A1, B1, C1 etc.,

affixed.

Example: 1SS270ATD-E-Q

Reliability

• (H) means "Special manufactured for the communications industry".

(K) means "Special manufactured for the industry".

This item is omitted with other general products.

Characteristic number (serial number)

• Affixed in order of registration (11 or more digits)

Product

• See 1.2 (2)

Silicon device indicated by letter "S"

Lead-free specification

Overseas sales product

Packing specification (2-3 letters)

1.2 Exceptions to Diode Type Number Nomenclature (Originally Devised by former Hitachi Diode)

When inconsistencies occur in the general principles for setting the type number as described in 1.1, use the following configuration originally devised by former Hitachi diode.

(1) Basic configuration

Example: HSM88WATL-E-Q

Grade

Series name

Packing specification

Application

• See 1.2 (2)

Reliability

• See 1.1 (2)

Package

• See 1.2 (3)

Serial number

• Serial numbers are from 1 to 4 digits in length.

Pin connection

• See 1.2 (4)

Lead-free specification



22

(2) System of letters to indicate application Insert one of the letters shown in the table below to indicate application (product classification).

Letter Indicating Application

Application (product classification)

Letter IndicatingApplication

Application (product classification)

S Signal diode R High speed switching diode V Variable capacitance diode,

PIN diode Z Zener diode

(3) System of letters to indicate outline

One of the letters in the table below is used to indicate the outline (package) of the device. Letter Indicating

Outline Outline (package) Letter Indicating

Outline Outline (package) B CMPAK, CMPAK-4 L EFP C UFP, a part of CMPAK M MPAK, MPAK-5 D SFP S MHD G DO-35 U URP K LLD W MPAK for high speed switching

Note: 1. The letter “G” (DO-35) may be omitted except when it is particularly necessary to differentiate from other packages (e.g., HZ6A1)

(4) System of indication to pin connection

When several Diodes are molded in 1 package, indicate inside connection as follows according to the connection state in principle.

Pin Connection Type Pin Connection

Circuit Pin Connection Type Pin Connection

Circuit Series S

Cathode common WK

Series reverse SR

4 devices Anode common

FA

Anode common WA

Bidirectional Zener Diode

4 pins Parallel

YP


23

2. Nomenclature for High Speed Switching Diodes

2.1 System for Indicating Current Current is taken as the maximum rating of average rectified current (IO) or forward current (IF). This specification covers rectifiers with an IO or IF value of ≥ 100 mA. As a rule, the indicator for current value in the type number is two columns as shown in the example below. However, with devices of more than 1 A or more (e.g., a product with an IO or IF of 1.2 which is not an integer) the number after the decimal point is discarded, and products with an IO or IF measured in 10 mA units have the 10 mA units dropped.

Example: Average forward current IO (or IF) Current indicator 1 A 1 20 A 20 0.1 A 01 1.2 A 1

2.2 System for Indicating Dielectric Resistance Division Dielectric resistance is taken as the maximum rating of VRRM (Note). As a rule, two letters are used for products with a VRRM in 10 s and 100 s. Where the VRRM is up to the 1 unit (e.g., 35 V) the ones unit is dropped.

Example: Dielectric Dielectric resistance VRRM resistance indicator 10 V 01 20 V 02 35 V 03 100 V 10 800 V 80

Note: May also be indicated as VRM or VR (peak).

2.3 Letters Indicating Product Division With the above systems of classification (2.1 and 2.2) alone, products with different external forms etc., cannot be differentiated from others with the same current and voltage ratings. So another classifier is added after the voltage division containing letters in sequence (I and O are not used).

(1) Basic configuration

Example: HRW0503ATR

Packing specification

Series name

Application

• R: High speed switching diode

Package

• See 1.2 (3)

Average rectified current

• See 2.1

Product division

• See 2.3

Voltage division

• See 2.2


24

3. Renesas Type Number Nomenclature (1) Basic configuration

Example: RKV500KJR1Q

Package code

• See 3.(4)

Quality level (omissible)

Serial number (A pin arrangement symbol etc. is included.)

• It determines with each family and

a consecutive number is defined

in order of registration.

• See 3.(3)

Product family

• See 3.(2)

Product division

• K: Diode

RENESAS

Inside code

• Packing specification

(Refer to 2.2 (4) of "Standard Taping

Specifications" (REJ27G0009))


Lead-free code

(2) The symbol showing a product family.

Symbol Family V VC (Tuner, VCO) P PIN (Attenuator, Antenna switch) S SW (Switching, high frequency Switching) D SS_SB R PR_SB (It is based on Rectifier current value and Voltage withstanding value.) Z ZN (It is based on VZ value.)

(3) Unique number Number (serial) Family Number (serial) Family

100 to 149 Switching 400 to 499 Multi pin package products 150 to 199 high frequency Switching 500 to 599 Variable capacitance (Tuner) 200 to 299 PIN (Antenna switch) 600 to 699 Variable capacitance (VCO) 300 to 399 PIN (Attenuator) 700 to 799 Small signal schottky

(4) System of letters to indicate outline

Letter Indicating

Outline Outline (package)

Letter Indicating

Outline Outline (package)

Letter Indicating

Outline Outline (package)KA DO-35 KK SFP QA MPAK KC MHD KL EFP QC MPAK5 KD LLD KP MP6 QE CMPAK KG URP KT VSON-5 QF CMPAK4 KH TURP KS MFP12 WA to WF Wafer shipment 1 to 6KJ UFP KE MAP series WT to WR Chip shipment 1 to 6

25

Renesas Diode Symbols and Their Definitions

Renesas uses many symbols drawn from the maximum ratings and electrical characteristics tables for the convenience of users and circuit designers who need to know the performance of particular kinds of product. The specific meanings of these symbols are given in more specialist technical literature, but for convenience of readers of diode data sheet, the meanings have been simplified.

1. General Principles Relating to the Symbols Capital letters used for the symbol and suffix indicate DC characteristics. AC and small signal characteristics are denoted by lower case letters.

Note that although permissible power (Pd) is not a DC characteristic, it does contain a capital letter in part.

The use of suffixes is described below. There are some exceptions and conventional usages which depart from the principles.

Table 1 Example of a Symbol Display

Symbol First Item Definition T opr R th P d

The first item provides a supplementary explanation of the symbol.

I F

V R

The first item indicates the direction of transmission.

The first item is classified in the following two ways.

a. To provide a supplementary explanation of the contents indicated by the symbol. (In this case, the first item sometimes has three letters or more).

b. To indicate the direction of transmission. F: Forward transmission R: Reverse transmission

2. Symbols for Maximum Ratings With semiconductor products, the maximum ratings are usually defined in terms of the “absolute maximum ratings”. The strictest care must be taken to assure that the values given in the maximum ratings table for each type are never exceeded, even for an instant. Even momentary excess of these maximum ratings can lead to immediate deterioration or destruction of the device concerned. Even if the device operates for a while after the excess, it must be assumed that the operation life has been shortened considerably.

In designing electronic circuits with semiconductor devices, the first step to circuit design is to make sure that their maximum ratings are never exceeded, no matter what electrical fluctuations due to external conditions may occur.

For example, even though the current and voltage applied to a particular diode may be within the maximum ratings, the power consumption is given by the product of current and voltage and must be within the range of permissible dissipation for the particular type. Furthermore, this permissible dissipation will decrease as the service temperature is rises, and the service range will be reduced accordingly.

The following table gives brief definitions of the various items of maximum ratings prescribed for the different devices covered by diode data sheet.


26

Table 2 Diode Maximum Ratings

Term Symbol Definition Repetitive peak reverse voltage

VRRM Maximum allowable instantaneous value of reverse voltage repeatedly applicable.

Non-repetitive peak reverse surge voltage

VRSM Maximum allowable instantaneous value of reverse surge voltage without repetition.

Peak reverse voltage VRM [VR(peak)] Maximum allowable instantaneous value of reverse voltage that can be applied.

Reverse voltage VR Maximum allowable value of reverse voltage. Repetitive peak forward current

IFRM Maximum allowable instantaneous value of forward current repeatedly applicable.

Non-repetitive peak forward surge current

IFSM [IF(peak)] Maximum allowable surge value of forward current without repetition.

Peak forward current IFM [IF(peak)] Maximum allowable instantaneous value of forward current. Forward current IF Maximum allowable value of forward current. Average rectified current

IO Maximum allowable continuous average current in the forward direction under specified conditions.

Thermal resistance Rth Rth(j-a), [Rth(j-c)]

Under thermally steady state while the device is energized, the value of the temperature difference between the junction and ambient air or between the junction and case per unit power dissipation at the junction.

Power dissipation Pd Maximum value of power dissipation repeatedly consumable in diode under specified conditions.

Junction temperature Tj Temperature at the junction which is determined as the basis of the rating and indicated by the allowable range of temperature in device operation.

Storage temperature Tstg Range of allowable temperature for storage of the device. Operating ambient temperature

Topr Limit value of the ambient temperature at which operation is possible under the prescribed heating conditions.

Lead temperature Tl Upper limit value of lead temperature.


27

3. Symbol of Electrical Characteristics Table 3 Electrical Characteristics of Switching Diodes

Term Symbol Definition Reverse voltage VR Voltage value when the specified reverse current (IR) is flowing. Forward voltage VF Voltage value when the specified forward current (IF) is flowing. Reverse current IR Current value when the specified reverse voltage (VR) is applied.Forward current IF Current value when the specified forward voltage (VF) is applied.Capacitance C Terminal capacitance when the specified reverse voltage (VR)

and frequency (f) are applied. Rectifier efficiency η Under specified conditions, the ratio of DC output power voltage

(revealed in load after rectification) to AC input power voltage. Forward resistance rf Resistance value when specified forward current and frequency

are applied. Forward temperature coefficient

ΔVF /ΔTa Ratio of forward voltage change to ambient temperature change.

Reverse recovery time trr Time taken for the reverse current (IR) to reach the specified level (Irr) when the reverse voltage (VR) is applied while the device is conducting in the forward direction. When without a rule of (Irr), assumed with 0.1 IR.

Table 4 Electrical Characteristics of Switching Diodes

Term Symbol Definition Zener voltage VZ Voltage value when the specified reverse current (IZ) is flowing. Zener current IZ Standard current for measuring Zener voltage. Dynamic resistance ZZ, rd, ZZT, ZZk Ratio of small change in Zener voltage to small change in Zener

current. Temperature coefficient γZ Ratio of Zener voltage change to ambient temperature change. Table 5 Electrical Characteristics of Variable Capacitance Diodes

Term Symbol Definition Matching error ΔC/C Percentage of capacitance variation among group of devices

under specified conditions. ΔC/C = (Cmax – Cmin) ÷ Cmin × 100%

Capacitance ratio n Ratio of capacitance with specified differences in voltage. Series resistance rs Series resistance value when specified reverse voltage and

frequency are applied. Performance index Q High frequency characteristics performance indicated by series

resistance capacitance value when specified reverse voltage and frequency are applied. Q = 1/(2πf·rS·C)


28

4. Indicator of Units and Mathematical Power Units for maximum ratings and characteristics are as follows.

a. Unit indicators method *1 Types of Quantity Symbol Unit Abbreviations Reading

Current I, i A ampere Voltage V, v V volt Power P W watt Resistance R, r Ω ohm Static capacitance C F farad Inductance L H henry Admittance y S siemens Conductance g S siemens Susceptance b S siemens Gain, attenuation — dB decibel Time t s second Frequency f Hz hertz Angle (φ) ° degrees Temperature T °C degrees Length (l) m meter Efficiency η % percent Note: 1. All of the units shown here are to be applied to the power product of 100. When indicating the

power product in connection with time t (s) or frequency f (Hz), the following indicators should be used: t (μs), f (kHz), etc.

b. Unit indicators method *1

Power Abbreviation Prefix 109 G giga 106 M mega 103 k kilo 100 — — 10–3 m milli 10–6 μ micro 10–9 n nano 10–12 p pico 10–15 f femto

Note: 1. Currently, the powers 109 to 10–15 are used for semiconductor devices. However, it does not follow that all of the powers are used for different quantities; 10–3 (m) and 10–9 (n) are not customarily used for static capacitance.

29

Reliability of Renesas Diodes

1. Diode Reliability

1.1 About the Construction Diodes are classified according to whether they are sealed in glass or plastic, and different considerations are required for each as regards reliability design.

With the glass-sealed type (hermetic seal), the assurance of heat and mechanical strength is important, taking into account air-tightness and thermal expansion coefficient matching between components (pellet and lead wire studs and glass case in the case of DHD).

Table 1 shows representative devices classified by external shape. Check the classification of each with reference to the package.

The important criteria with the plastic-sealed type are the plastic material, pellet surface stabilizing technique (passivation specification), and the structural design of the package.

1.1.1 Features of the glass-sealed type (1) Superior air-tightness (moisture resistance), and high reliability. (2) Compact and lightweight for easy mounting. (3) Double heat sink construction for favorable heat radiation. (4) Possible to streamline set assembly due to ease of taping and lead forming. 1.1.2 Features of the plastic-sealed type The mini-mold (MPAK) diodes have the following features:

(1) Ideal for hybrid IC use as they are ultra-compact and can be surface mounted. (2) Plural pellets can be sealed in one package. (3) Optimal for high density surface mounting in ultra-compact devices.

1.2 Reliability Data Actual examples of diode reliability tests are given below.

(1) Failure criteria standards An example of the failure criteria standards for a diode is given in table 2.

(2) Diode reliability test data Operation life test results according to application are given in table 3, and environmental test results for each package are shown in table 4.

(3) Diode characteristics changes Reliability testing is not solely a question of finding failures. Other factors such as change in characteristics over time and characteristic distribution contribute to quality and reliability evaluation of a product. This data is also the basis for margin allowance in circuit design and other procedures during user system design. Table 5 shows examples of changes over time of the Zener voltage and reverse current in an operation life test for a Zener diode. Table 6 gives changes over time of reverse current in a high temperature reverse bias test for a variable capacitance diode.

(4) Percentage occurrence according to failure mode The percentage occurrence according to failure mode for glass-sealed diodes on the market is shown in figure 1, and for the plastic-sealed type in figure 2. Figures 1 and 2 reveal that more than 80% of failures are due to destruction. This evidence indicates that the failure rate could be reduced by considering how the devices are handled during use, and particularly through circuit designs that strictly adhere to the maximum ratings.


30

Table 1 Product Types According to Package

Type Package Representative Product Part No. MHD 1SS270, HZS series DO-35 1S2076, 1SS106, HZ series

Glass-sealed type

LLD HSK83, HZK series, HSK120 MP6 RKP200KP, RKV600KP, RKV652KP MP6-8 RKP450KE EFP HVL142A, HVL355C, RKV650KL, RKD700KL, HSL226 SFP HVD142A, HVD355B, RKP201KK, RKV500KK, RKD700KK UFP HVC355B, RKV500KJ, RKD700KJ, HSC226 TURP HRV103A, HRV103B URP HVU355B, HRU0302A, RKV500KG, HZU series MPAK-5 HZM6.8MFA, HZM27FA MPAK HSM88AS, HVM14S, HVM16, HZM-N series, HRW0202A CMPAK-4 HSB0104YP CMPAK HVB14S VSON-5 RKZ6.8Z4MFAKT

Plastic-sealed type

MFP12 RKP400KS, RKP401KS, RKP402KS


31

Others

1%

NVF

4% Hermetic leakage failure

4%

Foreign matter fault

6%

EOS or ESD

85%

2007

Statistics

Figure 1 Classification of Glass-Sealed Type Diodes on the Market According to Fault Mode

NVF

19%

EOS or ESD

81%

2007

Statistics

Figure 2 Classification of Plastic-Sealed Type Diodes on the Market According to Fault Mode


32

Table 2 Example of Failure Criteria for Diodes

Failure Criteria Standard *1 Item Lower Limit Upper Limit Unit Remarks

Reverse voltage L × 0.9 — V Reverse current — U × 2 A Forward voltage — U × 1.1 V Zener voltage change rate –2 +2 %

Electrical characteristics

Disconnection, short Disconnection,

semi-disconnetion,

short, semi-short

Includes high/low temperature failure

—

Hermetic leakage Major/minor leak — Applies to glass-sealed diodes

Appearance by limit sample — Corrosion/discoloration by limit sample — Solderability by limit sample —

Appearance, others

Marking by limit sample — Notes: 1. U: Initial standard maximum value

L: Initial standard minimum value Table 3 Operation Life Test Results (1)

Fast/High Voltage Switching RF Switching Zener Diode

No. Test Item Test Conditions Result*1

Failure rate*2 (1/h) Result*1

Failure rate*2 (1/h) Result*1

Failure rate*2 (1/h)

Continuous operation (1)

Associated standard: EIAJ-ED-4701 Ta=25 ±2°C, Pd max. Testing time: 1000 h

0/307 3.0×10–6 0/60 1.5×10–5 0/920 1×10–6 1


Associated standard: EIAJ-ED-4701 Ta=25 ±2°C, IO max. Testing time: 1000 h

0/307 3.0×10–6 0/60 1.5×10–5 — —

2 High temp. reverse bias

Associated standard: EIAJ-ED-4701 VR max., Ti max. Testing time: 1000 h

0/307 3.0×10–6

0/60 1.5×10–5 — — —

Notes: 1. No. of failure/No. of tests 2. Reliability standard 60%


33

Table 3 Operation Life Test Results (2)

High Speed Switching DiodeVariable Capacitance PIN

Diode

No. Test Item Test Conditions Result*1 Failure rate*2

(1/h) Result*1 Failure rate*2

(1/h) Continuous operation (1)

Associated standard: EIAJ-ED-4701 Ta=25 ±2°C, Pd max. Testing time: 1000 h

— — 0/60 1.5×10–5 1


Associated standard: EIAJ-ED-4701 Ta=25 ±2°C, IO max. Testing time: 1000 h

0/614 1.5×10–6 — —

2 High temp. reverse bias

Associated standard: EIAJ-ED-4701 VR max., Ti max. Testing time: 1000 h

0/307 3.0×10–6 0/120 7.6×10–6

Notes: 1. No. of failure/No. of tests 2. Reliability standard 60% Table 4 Environmental Test Results (1)

Package Glass

Insertion Type SMD (LLD)

No. Test Item Test Conditions Result*1Failure

rate*2 (1/h) Result*1 Failure

rate*2 (1/h)260°C10 s

0/304 — 0/304 — 1 Solder heat resistance

Associated standard: EIAJ-ED-4701 Solder temperature: (see right) Solder wetting time: (see right) Rosin type flux wetting: 5 to 10 s Wetting 1 to 1.5 mm from the body of the test piece. 2 to 2.5 mm in the case of DO-41. Entire body is wetted in the case of SMD.

350°C3 s

0/304 — — —

[cycle]10

0/152 — 0/152 — 2 Thermal shock

Associated standard: EIAJ-ED-4701 Low temperature: 0°C, 5 min High temperature: 100°C, 5 min Normal temperature: under 10 s No. of cycles: (see right)

50 0/152 — 0/152 —

3 Temp. cycling

Associated standard: EIAJ-ED-4701 Low temperature: Tstg min. 30 min High temperature: Tstg max. 30 min Normal temperature: 10 to 15 min No. of cycles: 10

0/2304 — 0/2304 —

4 Drop test Associated standard: EIAJ-ED-4701 Height: 75 cm Onto 3 cm thick maple board 3 times

0/2304 — — —

5 Vibration Associated standard: EIAJ-ED-4701 Variable frequency Acceleration: 200 m/s2 Frequency: 100 to 2000 Hz XYZ directions, each 4 times

0/152 — 0/152 —

6 Shock test Associated standard: EIAJ-ED-4701 Acceleration: 15000 m/s2 Pulse width: 0.5 ms XYZ directions, each 3 times

0/152 — 0/152 —



34

Table 4 Environmental Test Results (1) (cont.)

Package Glass




rate*2 (1/h)Associated standard: EIAJ-ED-4701 (1) Tensile Load: JIS-C-5035 recommendation Hold time: 10 s

0/304 — — —

Associated standard: EIAJ-ED-4701 (2) Bending Load: JIS-C-5035 recommendation 90° bend, 2 times

0/304 — — —

7 Terminal strength

Associated standard: EIAJ-ED-4131 (3) Board bending Board support gap: 90 mm Extent of board bending: 2 mm

— — 0/304 —

8 Solvent resistance

Associated standard: EIAJ-ED-4131 Isopropyl alcohol Immersion time: 30 s

0/152 — 0/152 —

9 Salt spray Associated standard: EIAJ-ED-4701 Ta = 35°C, 5% saline atmosphere Test duration: 24 h

0/152 — 0/152 —

Associated standard: EIAJ-ED-4131 (1) Bending resistance Applied pressure: 10 N Pressure duration: 10 ±1 s

— — 0/304 — 10 Body strength

Associated standard: Renesas standard (2) Compression resistance Applied pressure: 5 N Pressure duration: 10 ±1 s Pressure applied along the diode body axis

— — 0/304 —

11 Air tightness Associated standard: EIAJ-ED-4701 Pressurized water immersion test Applied pressure: 5.07 × 105Pa Test duration: 2 h

0/2304 — 0/2304 —

12 Pressure cooker

Associated standard: EIAJ-ED-4701 Pressurized water immersion test Applied pressure: 2.03 × 105Pa Test duration: 40 h

— — — —

13 High temperature/ humidity storage

Associated standard: EIAJ-ED-4701 Ta = 65°C, 95% RH Test duration: 1000 h

0/920 1×10–6 0/920 1×10–6

14 High temperature/ humidity reverse bias

Associated standard: EIAJ-ED-4701 Ta = 85°C, 85% RH, VR max. Test duration: 1000 h

0/920 1×10–6 0/920 1×10–6

15 High temperature storage

Associated standard: EIAJ-ED-4701 Tstg max. Test duration: 1000 h

0/230 4×10–6 0/230 4×10–6

16 Low temperature storage

Associated standard: EIAJ-ED-4701 Tstg min. Test duration: 1000 h

0/230 4×10–6 0/230 4×10–6



35

Table 4 Environmental Test Results (2)

Package Glass




rate*2 (1/h)1 Solder heat

resistance Associated standard: EIAJ-ED-4701 Solder temperature: 260°C Solder wetting time: 10 s Rosin type flux wetting: 5 to 10 s Entire body is wetted in the case of SMD.

0/180 — 0/88 —

Associated standard: EIAJ-ED-4701 Solder temperature: 235 ±5°C Solder wetting time: 5 ±0.5 s Rosin type flux wetting: 5 to 10 s Entire body is wetted in the case of SMD.

0/180 — 0/88 — 2 Solderability

Associated standard: EIAJ-ED-4701 Solder temperature: 230 ±5°C Solder wetting time: 5 ±0.5 s Rosin type flux wetting: 5 to 10 s Entire body is wetted in the case of SMD. Pretreatment: Leave in pure stream for 60 min.

0/180 — 0/88 —

[cycle]10

0/180 — 0/88 — 3 Thermal shock

Associated standard: EIAJ-ED-4701 Low temperature: 0°C, 5 min High temperature: 100°C, 5 min Normal temperature: under 10 s No. of cycles: (see right)

50 0/180 — 0/88 —

4 Temp. cycling

Associated standard: EIAJ-ED-4701 Low temperature: Tstg min. 30 min High temperature: Tstg max. 30 min Normal temperature: 10 to 15 min No. of cycles: 10

0/3068 — 0/1155 —

5 Drop test Associated standard: EIAJ-ED-4701 Height: 75 cm Onto 3cm thick maple board 3 times

0/3068 — 0/1844 —

6 Vibration Associated standard: EIAJ-ED-4701 (1) Variable frequency Acceleration: 200 m/s2 Frequency: 100 to 2000 Hz XYZ directions, each 4 times

0/60 — 0/60 —

7 Shock test Associated standard: EIAJ-ED-4701 Acceleration: 15000 m/s2 Pulse width: 0.5 ms XYZ directions, each 3 times

0/60 — 0/60 —

8 Terminal strength

Associated standard: EIAJ-ED-4701 (1) Tensile Load: JIS-C-5035 recommendation Hold time: 10 s

0/180 — 0/88 —

9 Solvent resistance

Associated standard: EIAJ-ED-4131 Isopropyl alcohol Immersion time: 30 s

0/60 — 0/60 —

Notes: 1. No. of failure/No. of tests 2. Reliability standard 60% 3. SMD1: MPAK, CMPAK 4. SMD2: URP, UFP, SFP


36

Table 4 Environmental Test Results (2) (cont.)

Package Glass




rate*2 (1/h)10 Salt spray Associated standard: EIAJ-ED-4701

Ta = 35°C, 5% saline atmosphere Test duration: 24 h

0/180 — 0/88 —

11 Pressure cooker

Associated standard: EIAJ-ED-4701 Pressurized water immersion test Applied pressure: 2.03 × 105Pa Test duration: 40 h

0/180 1.28×10–4 0/88 2.6×10–4

12 High temperature/ humidity storage

Associated standard: EIAJ-ED-4701 Ta = 65°C, 95% RH Test duration: 1000 h

0/1840 5×10–7 0/920 1×10–6

13 High temperature/ humidity reverse bias

Associated standard: EIAJ-ED-4701 Ta = 85°C, 85% RH, VR max. Test duration: 1000 h

0/1840 5×10–7 0/920 1×10–6

14 High temperature storage

Associated standard: EIAJ-ED-4701 Tstg max. Test duration: 1000 h

0/735 1.25×10–6 0/185 5×10–6

15 Low temperature storage

Associated standard: EIAJ-ED-4701 Tstg min. Test duration: 1000 h

0/735 1.25×10–6 0/185 5×10–6

Notes: 1. No. of failure/No. of tests 2. Reliability standard 60% 3. SMD1: MPAK, CMPAK 4. SMD2: URP, UFP, SFP


37

Table 5 Example of Change in Characteristics of a Zener Diode

Change in Characteristics Example Changes in VZ and IR Due to Zener Diode Operation

Life Test Part No. HZ7 Test conditions Ta = 25°C

Pd = 500 mW No. of test pieces 200 pieces Criteria for failure VZ = initial value ± 2%

IR = ≤ 2 μA Failure mechanism Surface deterioration Explanation of results: (1) VZ and IR both shift stably (2) VZ and IR are both within the initial values,

and nothing occurred to cause the failure criteria to be surpassed.

1.0

0.5

0

–0.5

–1.0

0 168 500 1000

Time (h)

Measuring condition :

Normal temperature

ΔVz

(%)

10

1.0

0.1

0.01

0.001

0 168 500 1000

Time (h)


Normal temperature

IR(μA)

VR = 3.5V

Table 6 Example of Change in Characteristics of a Variable Capacitance Diode

Change in Characteristics Example Changes in IR Due to High Temperature Reverse Bias

Test of Variable Capacitance Diode Part No. RKV500KJ Test conditions Ta = 85°C, RH = 85%

VR = 32 V (continuous)

No. of test pieces 60 pieces Criteria for failure IR = 20 nA

(VR = 32 V) Failure mechanism Surface deterioration Explanation of results: (1) Fluctuation in IR distribution is minimal, IR is

within initial standard, and nothing occurred to cause the failure criteria to be surpassed.

1.0

0.1

0 168 500 1000

Time (h)


Normal temperature

IR(nA)

0.01

VR = 32V


38

(5) Failure rate and derating Judging from the results of each reliability test, it is necessary to derate devices for heat stress due to ambient temperature, power dissipation etc., in order to assure operational reliability. Table 7 shows diode derating characteristics. It is advisable to use within the maximum ratings when using the devices.

Table 7 Diode Derating Characteristics

Derating Application Example of High-Speed Switching Diode Stress factor Pd, Ta Failure criteria Disconnection, short,

deterioration in characteristics

Failure mechanism

Front/back electrode and junction deterioration

Overview: The junction temperature was changes so as to accelerate the operation life test of the high-speed switching diode as much as possible. The acceleration coefficient was determined as in the graph on the right based on the relation between junction temperature and failure rate. Use of derating data When the failure rate at the prescribed Tj has been checked, the failure rate at arbitrary temperatures can be determined from the graph on the right. Example: When a glass-sealed type diode has a failure rate of 100 [FIT] occurring at Tj = 100°C, determine the failure rate at Tj = 50°C. From the graph on the right, the acceleration coefficients at 100°C and 50°C are 1800 and 18 to 25°C respectively. The failure rate at 50°C is 1/100 that of the rate at 100°C. Therefore, at 50°C, 100/100 = 1 [FIT] can be expected.

2.0 2.5 3.0 3.5

Junction temperature 1/Tj (×10−3°K−1

)

Acce

lera

tio

n c

oe

ffic

ien

t (m

ultip

lica

ton

fa

co

tr a

ga

inst

25°C

)

225 200 175 150 125 100 75 50 25 Tj (°C)

Plastic-sealed diode

Glass-sealed diode

106

105

102

104

103

10

1

39

Renesas Diode Manufacturing Process and Quality Control

Renesas makes every possible effort to maintain the quality of its diodes from manufacturing to shipment, and pays strict attention to quality control in the production process. Meticulous care over each of the manufacturing process enables timely detection of faults, and helps maintain stable quality control.

Figure 1 shows the manufacturing process, figure. 2 shows details of quality control for the glass-sealed type diode and figure 3, the plastic-sealed type diode.

In addition to inspection of all diodes, Renesas also carries out sampling inspections in accordance with the JIS Z 9015 standard, to provide a regular reliability assurance system.

Process

Materials, parts

Materials,parts

Materials and parts inspection

Manufacturing

Screening

100% inspection

Products

Productinspection

Warehouse

Shipping

Customers

Quality Control

Characteristics test of materials and parts for semiconductor devices

Production equipment, environment,auxiliary materials,

workers administration

Process Quality Control

100% inspection of external and electrical characteristics

Sampling inspection of externaland electrical characteristics

Reliability test

Quality information

ClaimsField recordOther general quality information

Informationfeedback

Method

Sampling lot judgment,

Quality level affirmation

Quality level affirmation

Sampling lot judgment,Quality level affirmation

Classification,inspection

Reliability level affirmation

Sampling lot judgment

Figure 1 Manufacturing Process and Quality Control Flowchart


40

Process

Shipping

Wafer

Mask

Lead

Glass

Purchase of materials

Diffusion

Film thickness inspection

Photolithography

Photolithography inspection

Metallization

PQC

Scribing

Chip visual inspection

Pellet washing

PQC

Assembly

Sealing

Soldering process

PQC

Screening *1)

Total electrical inspection

PQC *1)

Marking

Taping and Packing

Shipment inspection

Warehouse

Type No.

Film thickness, Resistivity

Appearance of wafer

Film thickness

Appearance of wafer

Appearance of chip

Appearance of chip

Type No.

Appearance, Solder thickness

Vibration IR


Failure analysis

Assurance of Taping

Electrical characteristics,

Appearance

Part confirmation

Assurance of basic film thickness

Grasp of diffusion status

Part confirmation

Scratch and Position deviation


Monitor Scratch and Metallization

Selection of good/bad chip

Monitor Scratch and Crack

Part confirmation

Appearance of outline

Feedback of analysis information

Control Item Control Point

: Work process

: PQC (Process Quality Control)

: Inspection

Notes: *1: Individual specification.

*2: One in of the order varies in the manufacture main flow.

Figure 2 Glass-Sealed Type Diode Quality Control Flowchart


41

Shipping

Purchase of materials

Diffusion

Film thickness inspection

Photolithography

Photolithography inspection

Metallization

PQC

Scribing

Chip visual inspection

PQC

Die bonding

Wire bonding

PQC

Molding

Solder process

Marking

Lead cut

PQC

Total electrical inspection

Taping and Packing

Shipment inspection

Warehouse

Wafer

Mask

Frame

Resin

Type No.

Film thickness, Resistivity

Appearance of wafer

Film thickness

Appearance of wafer

Appearance of chip

Appearance of chip

Type No.

Appearance, Bonding strength

Type No.

Appearance of lead


Cover tape peeling strength

Electrical characteristics,

Appearance

Part confirmation


Grasp of diffusion status

Part confirmation

Scratch and Position deviation


Monitor Scratch and Metallization

Selection of good/bad chip

Monitor Scratch and Crack

Part confirmation

Appearance of bonding

Part confirmation

Appearance of outline

Process Control Item Control Point

: Work process

: PQC (Process Quality Control)

: Inspection

Notes: *1: One in of the order varies in the manufacture main flow.

Figure 3 Plastic-Sealed Type Diode Quality Control Flowchart

42

Precautions for Application

1. Selecting a Semiconductor Device The reliability of semiconductor devices is not limited to Renesas products alone, but is dependent on other factors including electronic equipment firms, and a variety of application conditions including the circuit conditions selected by the user, mounting and environmental conditions. To assure the kind of usage that gives a high level of reliability, please consider the maximum ratings, deratings and selection of package when choosing a device.

1.1 Maximum Ratings The maximum ratings of a semiconductor device are usually defined in terms of the “absolute maximum ratings”, and should not be exceeded under any circumstances, even for an instant.

Even momentary excess of these maximum ratings can lead to immediate deterioration or destruction of the device concerned. Even if the device operates for a while after the excess, it must be assumed that the operation life has been shortened considerably.

In designing electronic circuits with semiconductor devices, the first step to circuit design is to make sure that their maximum ratings are never exceeded, no matter what electrical fluctuations due to external conditions may occur.

Not only the DC maximum ratings but in the case of pulse type applications as well, the area of safe operation (ASO), load locus and peak voltage current should also not be exceeded.

(1) Diode maximum ratings A description of Renesas diode maximum ratings are given in the “Renesas Diode Symbols and Their Definitions” section of this data book.

(2) Area of Safe Operation (ASO) As opposed to the absolute maximum ratings, the ASO ratings indicate the maximum ratings in the operating state. However, since the mutual interactions between the voltages, currents, ambient temperature, and other conditions result in different combinations of conditions that can be used, these issues require careful consideration.

(3) Derating considerations The degree of derating that can be applied to particular maximum ratings is an important aspect of reliability design. Derating characteristics of semiconductor devices has been dealt with previously in this data book. At the system design stage, the derating values each vary slightly with the device type: these include electrical stress derating such as voltage, current, power and load, and mechanical stress derating such as vibration and shock. Table 1 shows examples of derating criteria that should be considered in reliability design. It is advisable to consider these derating criteria for assurance of reliability in the design of equipment. If setting within the derating criteria is problematic, another method, for example, selection of a device with greater maximum ratings, is advised.


43

Table 1 Derating Design Criteria Example

Derating Factor Diode (Precaution

for Application) Junction temperature

(Tj – 25°C) × 0.5 + 25°C or less ex.) (Tj = 175°C → 100°C or less)

(Especially for high- reliability applications)

Device ambient temperature

— (Ta = 5 to 35°C) (Especially for high- reliability applications)

Temperature

Others Power dissipation, ambient temperature, heat radiation conditions Tj = Pd × Rth(j-a) + Ta

Relative humidity 45 to 75% RH Humidity Others When condensation forms due to normal

temperature, sudden temperature change etc., semiconductors and PCBs should be coated with a waterproof.

Voltage withstanding

Maximum rating × 0.8 or less (maximum rating × 0.5 or less)

(Especially for high- reliability applications)

Voltage

Over-voltage Prevention measures against over-voltage including static electricity destruction

Average current IO × 0.5 or less (IO × 0.25 or less) (Especially for high- reliability applications)

Current

Peak current IFM [IF(peak)] × 0.8 or less Power Average power Pd × 0.5 (especially for Zener diodes)

ASO Individual catalog maximum rating value of should not be exceeded.

Pulse *1

Surge IFSM [IF(surge)] or less Note: 1. In general, peak voltage (including surge), current power and junction temperature should be

below the maximum ratings to guard against excess states, and deratings for reliability should be in accordance with the above average values. Please consult Renesas technical staff with regard to the ASO, as this varies with the circuit the device is used in.

2. Precautions for Mounting Certain precautions must be observed with regard to structural design or mounting work in semiconductor device assembly and mounting. The following is a description of the precautions it is advisable to observe during design and handling. The method of attachment and mounting should follow the precautions harm the reliability of semiconductor devices.

2.1 Forming and Cutting Leads When mounting an insertion type diode in a printed circuit board, leads may have to be formed to cut. Mechanical destruction of a device may occur or the life of the device may be shortened if unnecessary stress is applied to leads during these processes. In the worst case, the glass body of the diode can crack, so the following precautions should be taken when forming or cutting leads.

(1) When bending lead wires, hold them securely between the glass body and the point to be bent with a pair of pliers. Then bend them holding the open end of the lead so that no bending stress is applied to the glass body as illustrated in figure 1A. Never bend the leads while holding the glass body. The same precaution should be taken when the leads of multiple devices are processed simultaneously using lead forming machines (see figure 1B).

(2) The bend in the lead wires should be made away from the end of the glass body (see figure 1C). Do not bend the lead wires more than 90°.

(3) Do not bend the leads repeatedly.


44

: Wrong: Right

Clamp

Forming

mechanism

Maintain a gap

tW1

W2

W3

A) Lead bending

B) Bending a lead wire using a die

C) Bending point

: Wrong: Right

Even if the lead is pulled in the direction

of W3, the gap t must be maintained

between the diode body and the

clamping mechanism to avoid contact.

Figure 1 Precautions for Lead Forming

Example Case Name

Device Type

Example Contents

Package destruction due to automated insertion

Glass-sealed type diode

Countermeasures

Lead wire

Presser mechanism

Glass package

PCB

Lead clinch mechanism

1)

2)

Adjust the position of the presser mechanism (die). Use a die material that buffers the shock on the diode glass.

Set the lead clinch force to the minimum.

During automatic insertion of the diode in a PCB using a high-speed

inserter, the glass package was destroyed by excessive pressing

force on the diode body and/or excessive force from the lead clinch

in the PCB.

Figure 2 Package Destruction Due to Automated Insertion


45

2.2 Attachment to a Printed Circuit Board When attaching a semiconductor device to a printed circuit board, make sure the lead wires are not subjected to excessive stress.

Take the following precautions:

(1) The gap between attachment holes in the PCB should match the gap between lead wires to make sure that excessive stress is not applied either during insertion of the device or afterwards.

(2) When attaching a device to a PCB, do not pull unnecessarily on the lead wires to avoid excessive stress build up between the lead wires and package.

(3) Leave a suitable gap between the semiconductor device and the PCB. It is advisable to use spacers or similar means to achieve this.

(4) After fixing to the PCB, do not carry out assembly operations that are likely to cause stress between lead wires and the device body. For example, after soldering lead wires to the PCB, if the device is attached to a heat sink, variance in lead wire length tolerance and dimensions of the PCB could cause concentration of excessive stress on the wires, resulting in detachment or fracture, or package destruction. In this case carry out soldering after the device has been fixed in place.

(5) Pay attention to the precautions described in 2.1 when conducting automatic insertion or forming. (6) After attachment of the diode to the PCB, if the PCB is to be cut or partitioned, bending of the board can

concentrate excessive stress on the lead wires and/or package, resulting in damage to the package or disconnection of leads. In this case a process is needed that does not induce warping of board.

2.3 Soldering 2.3.1 The Insertion Type When soldering the glass-sealed type diode, whether you use a soldering iron or the flow solder method, soldering should be done as quickly as possible and at the glass. With the DO-41 type, soldering work should be done within 5 seconds at 250°C and 10 seconds at 230°C at a point 4-6 mm away from the end of the glass body.

With the DHD type, soldering work should be done within 10 seconds at 260°C and 3 seconds at 350°C at a point 1-1.5 mm away from the end of the glass body.

Take the following precautions in soldering diodes:

(1) Do not let the soldering iron touch the glass body directly (see figure 3A). (2) The soldering point should be over 3mm away from the diode body (see figure 3B). (3) Use of strongly alkaline or acidic flux can cause corrosion of the lead wires. (4) When solder or the soldering iron might touch the glass package of the diode during the soldering process, be sure

to preheat the diode up to about 100°C. (5) Do not pull forcefully on the lead wires when inserting diodes into a printed circuit board (see figure 3C). (6) The recommended soldering iron is the type operated with a secondary voltage supply by transformer. (7) The soldering iron should also be grounded to prevent current leakage. (8) When using adhesives on circuit boards to fix diodes, the diode may break if the adhesive sets extremely hard.

: Wrong: Right: Wrong

Don't touch

the diode body Soldering tip3mm minimum

from the diode body

A lead wire is

pulled with pliers to insert

A) B) C)

Figure 3 Precautions for Soldering


46

2.3.2 Surface Mounting Diode (SMD) The recommended conditions for soldering SMD diodes are shown in table 2.

Table 2 SMD Soldering Mounting Inset Conditions

Package Footprint (land) Dimensions Cream Solder Thickness MPAK-5

1.0

1.9

0.950.95

2.60.6

0.15 to 0.30mm

MPAK

1.0

0.950.95

2.6

0.8

0.15 to 0.30mm

CMPAK-4 1.3

1.9

0.8

0.15 to 0.30mm

CMPAK

1.9

0.8

0.6

0.65 0.65

0.15 to 0.30mm

VSON-5

0.4

5

1.0

0.5 0.5

1.3

50.3

0.15 to 0.30mm

MFP12 0.43

0.28

1.1

0.2

5

0.15 to 0.30mm

MP6

0.3

1

0.23

0.38

0.15 to 0.30mm

MP6-8 0.42

0.1

9

0.3

8

0.27

0.15 to 0.30mm

EFP φ0.4

1.0

0.15 to 0.30mm

Notes: 1. Footprint (land) dimensions are measured in millimeters. 2. Cream solder thicknesses are the example values for reflow mounting. 3. The temperature profile is shown below.


47

Table 2 SMD Soldering Mounting Inset Conditions (cont.)

Package Footprint (land) Dimensions Cream Solder Thickness SFP φ0.5

1.4

0.15 to 0.30mm

UFP

0.8

1.10.6 0.6

0.15 to 0.30mm

URP

0.8

1.50.8 0.8

0.15 to 0.30mm

TURP

1.1

0.8

0.5

0.8 2.0

0.15 to 0.30mm

LLD

1.6

2.21.2 1.2

0.15 to 0.30mm

Notes: 1. Footprint (land) dimensions are measured in millimeters. 2. Cream solder thicknesses are the example values for reflow mounting. 3. The temperature profile is shown below.


48

(1) Examples of Temperature Profile a. Reflow-Soldering Conditions

Soldering Conditions for reflow soldering are shown below. Table 3 Soldering Conditions for the Diode Packages

Lead plating Sn-Pb Sn-Bi, Sn-Cu Solder paste Eutectic alloy

of Sn-Pb Sn-Ag Eutectic alloy

of Sn-Pb Sn-Ag

Package surface temperature (upper limit)

Peak: 260°C 220°C or higher for no more than 60 s

Temperature profile

1 to 4°C/s

Time (s)Pa

cka

ge

su

rfa

ce t

em

pe

ratu

re (

°C)

255°C 16s Max

220°C 60s Max

260°C Max

110 ± 30s

160°C

190°C

b. Flow-Soldering Conditions Soldering Conditions for flow soldering are shown below.

Table 4 Soldering Conditions for Flow Soldering

Item Condition Upper Limit Applicability Temperature 80 to 150°C Preheating Time 1 to 3 minutes

— Substrate surface

Temperature 230 to 250°C 260°C Temperature of the solder layer Solder dip Time 2 to 4 s 10 s Time taken to pass through the solder layer

2.4 Cleaning (1) Fading of the marking and color codes

Clearness of markings and color-fastness of color codes may be lost due to cleaning. Be sure to check these after using cleaning agents.

(2) Electrical and mechanical characteristics (discoloration, deformation, deterioration, etc.) After cleaning a PCB, some corrosive material contained in the cleaning agent or flux may remain on semiconductor devices, causing corrosion of device wiring and leads with resulting loss of reliability. Thorough cleaning is therefore required for PCBs. It is recommended that the level of purity of the PCB after cleaning should conform with the MIL standard below.

(3) There is a possibility that minute Leak is generated by the snuff of flux between leads in Narrow pitch and Lower side electrode package. Please confirm the cleaning method of flux's not remaining.


49

Table 5 PCB Level of Purity After Cleaning

Item Standard Remaining Cl volume ≤ 1 μg/cm2 Resistance of solvent (after extraction) ≥ 2 × 106Ω • cm Notes: 1. PCB surface area: Both sides of the PCB + mounted components. 2. Extract solvent: Isopropyl alcohol: H2O = 3 : 1

(Resistance of solvent before extraction is ≥ 6 × 106Ω • cm) 3. Extraction method: Clean both sides of PCB with 10ml/2.54 × 2.54cm2 (minimum of 1 minute) 4. Measuring extracted solvent resistance: Conductivity meter

See MIL-P-28809A for details of the MIL standard. (4) Ultrasonic cleaning

It should be avoid to resonant to the devices. We recommend the following conditions. SMD

Frequency : 28 to 29 kHz (device should have no resonance) Ultrasonic power output : 15 W/l (1 time) Time : up to 30s Others : Make sure that neither devices nor PCB come into contact with the vibration source.

2.5 Parts Layout Environmental conditions have a decisive influence over the reliability of semiconductor devices. The layout of devices in a system should take into account temperature and heat radiation conditions as these are important for maintaining high reliability.

The examples of adverse layout given in the following.

(1) If a semiconductor device is located near a heat source such as a large resistor, the device’s heat radiator will be exposed, and the temperature of the device will rise. If heating abnormally high, the device’s reliability will suffer. Be sure to consider adequate ventilation when locating devices.

(2) Near high-voltage circuitry and in the corners at the bottom stage of equipment where dust easily gathers. In this type of area, dust and debris adhering to semiconductors can cause deterioration of the insulation, giving rise to faulty operation. As a precaution, semiconductors and PCBs installed in such locations should be coated with a waterproof resin. Such waterproof coating for PCBs is extremely effective in assuring and improving reliability under adverse environmental conditions of use. For example, where misoperation can occur due to shorts caused by electrically conductive debris (soldering or plating debris) lodged between circuit board wiring and semiconductor terminals; noise due to dust build-up and moisture absorption; faults due to large current leakage; steam, water drops and condensation due to sudden temperature fluctuation leading to metal migration (Ag migration); and deterioration hermetic seal of glass-sealed diodes (see figure 4). In adverse environments where high humidity, condensation and dust build-up are prevalent, coating of PCBs is a crucial means of preserving reliability in systems that must assure reliable, maintenance-free service over a long period. While there are a wide range of coating materials available, commonly used materials include the Tuffy®*1 TR-1141, TF-1150, and TF1154 products and Humi-seal R1A27*2.

Notes: 1. Manufactured by Hitachi Chemical Company, Ltd. 2. Manufactured by Boxy-Brown, Inc.


50

PCB

Water a

a'

b

+ –

Cathode Anode

Glass

Copper chloride

Copper

Iron/nickel

Dumet wire

Note : The film of copper oxide(Cu2O) on the copper

surface of the Dumet wire forms a hermetic structure by spreading across the glass.

a-a' cross-section drawing (enlarged)

Enlarged drawing of area b

Water (H2O)

H2

Cu2O

Cu

Glass

Fe-Ni

Ag bump

Pellet

Cavity

Area of hermetic seal damage

B A

B A

Paht of water penetration

(1) Water adheres to the diode surface when a reverse bias is applied.(2) With reverse bias, water undergoes electrolysis, and hydrogen is generated at the anode.Note : Oxygen (O2) is generated at the cathode.

(3) The copper oxide (Cu2O) is reduced from point A due to hydrogen. Cu2O + H2 2Cu + H2O

(4) Water penetrates the depleted area due to hydrogen reduction.(5) Steps (3) and (4) are repeated, and the hermetic seal is destroyed from point A to point B.

(6) A water-filled cavity develops due to the loss of hermetic seal.(7) Due to water penetration, there is a current leakage to the pellet surface, and the reverse current IR increases.(8) In the state described in (7), if a reverse bias is continuously applied, Ag migration occurs from the pellet anode (Ag bump).

Figure 4 Hermetic Leakage Due to Electrolytic Corrosion


51

2.6 Diode Molds (1) When molding a diode in plastic, care should be used a buffer coating of resin or a low hardness mold material

minimize stress on the diode. (2) If used a high hardness mold material, environmental changes or temperature changes could cause wire

disconnection or destruction.

2.7 Surge Open Failure of DHD Type Diodes (including LLD) If a surge voltage or current in excess of the ratings is applied to a DHD diode (including LLD), a short may develop, and in extreme cases, wire disconnection as shown in figure 5 might also occur.

Silverbump

Anode side Dumet

Chip

Cathode side Dumet

Glass sleeve

Before surge

Surge

Gap

After surge

The p-n junction is heated due to surge, and the silver

bump undergoes plastic deformation.

Linear expansion coefficients :

Ag (20.5 × 10−6)

Si (3.5 × 10−6)

Glass (9.1 × 10−6)

A slight gap develops between the surface of the Si

chip and end of the Dumet wire, leading to contact

failure and eventually an open circuit condition.

Figure 5 Plastic Deformation of Silver Bump Due to Heat During Surge Voltage/Current


52

3. Precautions for Circuit Mounting Matching the circuit design and initial standards is a prerequisite for regards reliability design, while a margin must be allowed in consideration of deratings and fluctuations in characteristics. Reliability problems involve wiring, external surge, reactance load, noise margin, area of safe operation (ASO), reverse bias, flyback pulse, static electricity pulse stress and more.

3.1 General Precautions Important factors in achieving the specified system reliability are using the devices within the parameter specifications shown in the catalog and observing the following points, taking account of the influence of peripheral components.

(1) Keep the peripheral temperature as low as possible in order to avoid high temperatures in the vicinity of semiconductor elements.

(2) Ensure that the power supply voltage, input voltage, power consumption, etc., are within specification, and use degrading.

(3) Ensure that an excessive voltage is not applied to, or caused on, input, output, power supply, and other pins. Also ensure that these pins are not subjected to strong electromagnetic waves.

(4) Ensure that static electricity is not generated during use. (5) When using high-speed elements, which have an extremely fine structure, either provide protection circuitry, etc.,

for the input section, or else ensure that electrostatic pulses are not applied. (6) When power is turned on and off, ensure that voltage application does not become unbalanced. For example,

excessive stress will be exerted if a voltage is applied to input or power supply pins, etc., when circuit ground pins are floating.

(7) In order to protect a circuit, please do not carry out use which destroys a diode electrically. An example is shown in 3.2 about the main items.

(8) Note on use in electromagnetic wave environments A source of strong electromagnetic waves in the vicinity of a Zener diode may alter the characteristics of the diode. For example, a drop in the breakdown voltage has been reported when a portable wireless unit (144 MHz, 430 MHz) with a 3 W output is brought within a distance of 10 cm from a diode. Please consult Renesas if there is a risk of exposure to strong electromagnetic waves in the operating environment.

3.2 Countermeasures to Noise and Surge Voltage Surge voltage, static electricity, noise and other problems are common to all semiconductor devices, and require countermeasures to remove the causes or reduce their influence.

In designing semiconductor equipment, it is considered common practice to make an allowance of about 10% to cover fluctuations in commercial power supplies. However, failure or misoperation of semiconductor equipment could occur if mechanical equipment generating surge voltages is being used in the particular region. This is due to build-up of surge in the power line, and impulse surge can also be induced during electrical storms. Equipping the AC line with a filter like that shown in figure 6 can help reduce the effects of surge. Where surge and static electricity for the AC line does not enter indirectly, but could be applied directly to components and semiconductor devices on a circuit board, use of a shield or similar measure is required. Also, low ground impedance for a shield is essential. There is no effect if impedance is not low.

When direct static electricity or surge is likely to be input as noise, introduce a protector circuit like the one shown in figure 7 as as special countermeasure. The time constant Ri × Ci is set in such as way as to effectively absorb surge pulses without having influence on device operation.


53

AC100 V

L2

L1

C

Primary side (P) Secondary side (S)

L1 = L2 = 2 to 10mH, C = 0.1 to 0.5μF

Figure 6 Example of Surge Absorption Circuit

External noise,external surge

Separatecircuit

R1

R2

R3

External noise,external surge

RiCi value is optimal in relation to conditions of use

Semi-conductordevicesin circuitbeingused

C1 C3

C2

Figure 7 Example of Surge Protection Circuit

3.3 Characteristic Parameters and their Relation to Reliability Each semiconductor device has its own characteristic parameters prescribed according to function and application. Each of these parameters has a predetermined range which should be matched. In system design, the significance of these parameters varies a great deal depending on application, and design must project a margin in initial characteristics as regards the critical parameters, or derating must be carried out. In the former case, a device should be selected with regard to the limit of operation range as a system. The statistical design method should be employed, and reliability testing as well as failure criteria of Renesas semiconductor devices should also be taken into consideration. In the case of derating, refer to the derating applications given under Renesas Semiconductor Device Reliability. Since the majority of parameter fluctuations cannot be foreseen under conditions of use, although design employing initial standards is considered justifiable in many cases, design with reference to failure criteria is needed as regards significant system items or items with no margin.

The following are points for consideration with regard to parameters.

(1) Whether the significance of a parameter extends to system failure. (2) The state of the parameter’s initial value margin. (3) Does the parameter change over time, and if so, is the change in the direction of the margin? (4) Is the change permissible for use of the device with other devices? (5) Is redundant design possible? (6) Is it possible to introduce the statistical design method for parameters?


54

4. Precautions for Storage, Transportation and Measuring Other precautions involve problems occurring during storage, transportation and measurement. Although the general precautions for storage and transportation of electronic components can be applied as they are to semiconductor devices, the latter require certain special precautions in addition to these. The following account includes the general precautions.

4.1 Storage of Semiconductor Devices The following methods of storage are advisable for semiconductor devices. If the precautions are not observed, faults in electrical characteristics, solderability, external appearance and other attributes may occur. In some cases, failure may also result.

Precautions for storage are as follows:

(1) The storage location should be kept within the optimum ranges of temperature and humidity: 5 to 35°C and 45 to 75% R.H. are the optimal conditions.

(2) The atmosphere in the storage location should not contain any noxious gases, and the amount of dust should be minimal.

(3) Storage containers should not be susceptible to static electricity. (4) Semiconductor devices should not be subjected to loads. (5) When storing for long periods, store in the non-processed state. When leads have already been formed, corrosion

at their bent portion of leads may occur. (6) Be sure that sudden temperature changes sufficient to cause condensation do not occur during storage of the

devices.

4.2 Precautions for Transportation When transporting semiconductor devices or their assembly units or subsystems, the same precautions as for other electronic components should be taken. The items listed in 4.1 and 4.2 have to be followed.

(1) Transportation containers, jigs etc., should not pick up static charge due to vibration en route. (2) When transporting semiconductor devices and PCBs, try to keep mechanical vibration and shocks to an absolute

minimum. Especially when bag packing of a glass-sealed type diode is dealt with, be careful of the following point. Even when the following handling is performed and there is no externally caused injury remarkable in a bag or a packing box, the products in a bag may collide and a glass chip and a crack may arise. a. Please do not perform what a floor etc. is dropped or throws the packing box containing the product to it. b. When a packing box conveys a product, please use shock absorbing material for neither vibration of

transportation nor a shake to join a direct product.


55

4.3 Precautions for Measuring (1) Persons handling semiconductor devices should be grounded via a high resistance to discharge any static electricity

that may be adhering to their clothing. The resistance value should be around 1 MΩ and no other person should come between the person being discharged and ground (GND). See figure 8 for static electricity data for human bodies. Since the product shown in Table 6 is susceptible to destruction by static charge. Be specially aware, therefore, of electrical charge on persons and on equipment in the vicinity.

Table 6 Static Electricity Destruction Voltage

Part No. Static Electricity

Destruction Voltage HSB88YP, HSC276, HSM88AS, HSM88ASR, HSM88WA, HSM88WK, HSM198S, HSM276S, HSM276SR, HSU88, HSU276

30 V

HVU359, HVU17, HVC365 80 V HSM107S 100 V Note: 1. Test condition: C = 200 pF, Both forward and reverse direction 1 pulse.

Static charge on clothing varies greatly with the type of clothing, covering, and physical constitution as wellas ambient temperature and humidity. The following is one example of measurement of static charge on a person.

Body charge measurement example

ConditionMax.

voltageAmbient

conditions

(1)

(2)

(3)

(4)

a 100% cotton shirt

b Synthetic fiber shirt *

a Synthetic fiber shirt *

b 100% cotton shirt

a Bare skin

b 100% cotton shirt

a Bare skin

b Synthetic fiber shirt *

+4,900 V

−13,000 V

−3.500 V

+7,200 V

−410 V

+980 V

+3,200 V

−7,000 V

Ambienttemp.20°C

Relativehumidity

40%

a,b : clothingc,d : metal tub (* polyvinyl chloride synthetic fiber)

ca b b d

Insulation Iron plate

Static charge between iron plate and iron tub : 50pFInsulation resistance : 1.5 × 10

12Ω

Measuring method for body charge

Put on clothing (a) against bare skin and place (b) on top. The test subject should be grounded during this operation. After removing the ground line, take off clothing (b) and place in tub (d).Measurements of the electrical potential were taken at this time for this example.

The (a) bare skin referred to in items (3) and (4) in the table represents a person wearing one garment with friction between the person's body and the garment.

Figure 8 Example of Measuring Static Charge on a Person


56

5. Precautions for Use of each Line of Products

5.1 Precautions for use of DHD Type Diodes (1) Since the glass-sealed (DHD) type diode body consists of glass and lead wire solder, consider the following to

prevent subjecting these diodes to unreasonable force. a. Do not drop glass-sealed (DHD) type diodes on concrete, glass plate, metal plate or any other hard surface to

avoid undue mechanical shock. Such shocks could result in cracking of the glass body, deterioration of characteristics, destruction or loss of hermetic seal.

b. When forming and cutting, excessive force should not be applied to the body of the glass-sealed type diode. The tension from leads to body must be kept below 10 N in such processing. It is needed to secure lead wires with approximately 30 N, or otherwise to shift the cutter blade timing of both sides.

(2) Schottky barrier diodes are susceptible to destruction by static charge. Be specially aware, therefore, of electrical charge on persons and on equipment in the vicinity.

(3) The main market failure modes of a diode are based on surge. Please take into consideration enough on surge and derating conditions.

5.2 Precautions for use of SMD Diodes (1) SMD diodes are formed in consideration of PCB mountability, and can be mounted without modification. UFP,

SFP, EFP,MP6 Series TURP, VSON-5, and MFP12 types are extremely small, special packages that are very susceptible to tensile force on leads. It is not used that they be mounted or later adjusted by hand.

(2) When mounting on a PCB, adhesive is used to temporarily hold diodes in place before solder is applied. When a SMD diode is held by adhesive, be sure that it is not subjected to undue stress.

(3) Since SMD diodes come in small package, be aware of thermal stress from soldering, flux and cleaning. Soldering should be done in as short a time as possible. When flow soldering: 260°C max for 10 s. When using a soldering iron: 350°C max for 3 s. Organic flux (rosin) is frequently used for soldering, and in view of corrosion resistance and insulation, this material is also recommended for soldering SMD. After soldering a SMD, wash thoroughly or use the shower method or ultrasonic method for cleaning off the flux. (Refer 2.3.2 for the recommended conditions.)

(4) Compared with other diffuse junction diodes, the SMD Schottky barrier diode is exceptionally prone to damage by static electricity, so it is needed to protect these diodes.

(5) When targeted for use under severe environmental conditions, SMD diodes should receive a moisture-proof coating after assembly on a PCB. It is advisable to coat the circuit board to protect it against external debris and moisture [see 2.5 (2)].

(6) Using a mounter to fix SMD diodes to a PCB can result in bending of the leads, so make sure that a force of no more than 3 N is applied. And also required to not apply superfluous force on the package or leads as being mounted, especially for UFP, SFP, EFP, TURP, VSON-5T, MFP12, MP6 Series package and the package with halogen free resin.


57

(7) When the SMD is mounted through reflow soldering, avoid incorrect positioning and floating-type failures due to bad mounting balance by taking care on the following points. The left and right land patterns must have the same shape. The left and right land areas, including the wiring sections, must take up the same area and include the same amount

of solder. The land position should become symmetrical. Heat must be applied to both soldering sections at the same time (the direction shown in figure 9 is recommended).

Reflow direction

Product

Substrate

Figure 9

(8) Do not apply high temperatures in soldering some of the packages, e.g. by using a soldering iron, since this applies strong thermal stress to the packages. (Please refer to the data sheet.)

(9) The lead material is exposed at the end of the leads of the package, because this is a cut surface. Accordingly, the solderability of the ends of the leads has not been checked. Users of this package must check this themselves.

5.3 Precautions for use of LLD Diodes (1) When mounting LLD diodes to a circuit board, and using adhesive to temporarily fix them in position (particular

when a large volume is used), soldering and consequent heating can subject diodes to excessive stress, which could result in cracking of their glass packages. Mount LLD diodes with low hardness and small bond in temporary.

(2) Use rosin type flux to assure reliable mounting. Use of chlorine containing flux can lower reliability by causing corrosion of Dumet wire.

(3) Make sure that diodes are not subjected to excessive stress during or after mounting on a PCB. a. Horizontal direction : 10 N or less b. Axial direction : 5 N or less (compression and tensile forces) c. Board warp : Warp width 2 mm or less (when support gap is 90 mm)

Horizontal direction

Axial

direction

Extentof warp

Figure 10

(4) Refer to the 5.2(7) for the notes at the time of carrying out reflow mounting of the LLD.

5.4 Precautions for use of LLD, UFP, SFP, EFP, MP6 Series, TURP, VSON-5, and MFP12 Diodes

(1) When mounting diodes to a circuit board, so make sure that flatten on the PCB. (Not becoming rough by wiring under diode body.)

(2) Please superfluous power does not join a product by the curvature of a circuit board or bending by circuit board break etc.


58

5.5 Note on Product Safety 5.5.1 Renesas Efforts in the Product Safety Area While Japan's product liability (PL) law came into effect in July 1995, Renesas has always considered product safety to be one aspect of quality, and has always stressed product safety in semiconductor products as an integral part of our product quality program. The following describes Renesas's basic approach to product safety and specific activities related to product safety.

Note that the product safety promised by Renesas consists of items generally required of semiconductor products themselves, which are then used as components in user systems. Safety measure required by the customer's product application and/or usage environment must be taken by the customer.

(1) Product safety measures from the product fabrication stage Renesas incorporates items related to product safety into each of the processes, such as the "sample reliability program" and the "quality approval flow" shown in the quality assurance system. Thus product safety is incorporated as an aspect of quality control from the product specification determination, development, and design stages. Table 7 lists the main product safety items in the major steps from product development through shipment and sales.

Table 7 Main Product Safety Items

Main Division Items that must be considered (main points) • Product development • Specification determination

• Customer applications • Usage environment

• Design • Catastrophic failure modes • Malfunction modes

• Manufacture • Making manufacturing rules explicit and strictly following said rules. • Quality assurance • Sales

• Quality assurance and evaluation/verification at each stage in the manufacturing process • Provision of a complete documentation set

(2) Documentation

Renesas provides a full complement of documentation, including data sheets, that present the performance of our products so that these semiconductor products can be used safely. Renesas also issues a wide range of documents written from the standpoint of product safety so that our customers can obtain the full specified performance of our products in their applications.

Table 8 Documents Related to Product Safety

Application area Specific document examples Documents that present product specifications

Data sheets, technology reports, and delivery specifications documents (purchase specifications documents)

Documents that present usage notes Reliability handbooks and packaging manuals Other documents (Documents produced under individual agreements with customers)

Sales contracts and quality agreements

(3) Safety measures based on meetings with customers to discuss specifications and product quality

Renesas is prepared to hold product quality meetings with customers to assure that our customers are able to use our products under conditions appropriate to the specifications of the product. As mentioned previously, these conditions are announced in a variety of documents. However, we are more than willing to meet with customers to discuss product selections appropriate to the customer's applications.


59

5.6 Requests to Our Customers To use Renesas semiconductor products safely, carefully consider the following points when designing equipment and systems.

(1) When using Renesas semiconductor products, read all the documentation provided carefully, and verify the specifications of the product itself as they relate to the environment under which the product will be used and operated. If you find any points in any Renesas document unclear, please report that to your Renesas sales representative.

(2) If Renesas products are to be used in areas that require high reliability and high safety margins (such as trunk line communication systems, transportation system equipment, aircraft or aerospace applications, or safety equipment), be sure to take the characteristics and reliability of the semiconductor devices themselves into consideration at the unit or system design stage, and adopt appropriate failsafe design techniques in the system design.

(3) Renesas does not provide semiconductor products that were developed with special consideration for use in equipment that human life may be dependent on. If you are considering using Renesas products in life support or other medical equipment, please contact your Renesas sales representative and inform us as to whether or not you have adopted safety measures in the system design.

(4) Renesas is prepared to meet with customers if necessary to discuss measures such as product selection to allow semiconductor products to be used without problem. If you have any questions, doubts, or concerns about product safety, please feel free to discuss those with your Renesas sales representative.

60

Standard Taping Specifications

1. Features of Standard Taping Specifications Silicon diode taping specifications are classified into three major categories according to the types of automatic mounting machines of set manufacturers.

(1) Axial type taping Enables automated assembly with each type of automatic mounting machine. Specifications comply with EIAJ standards. A 5mm pitch insertion is possible with MHD and UMD type diodes.

(2) Radial type taping This matches Panasert and Abisert specifications.

(3) Embossed type taping Can be used with all types of automatic mounting machine.

2. Taping Specifications

2.1 Axial Type Taping (1) Application packages

DO-35 MHD

(2) Taping specifications

Unit: mm Taping Symbol Package Code Form and Dimensions Appearance Quantity

TA *2 DO-35 MHD

Division I

52

75

255

80

5000 pcs AMMO pack

TD DO-35 MHD

Division II

26

45

255

50

2500 pcs

Notes: 1. See “(3) Taping dimensions”, for details of form and dimensions. 2. Recommended taping specifications.


61

Unit: mm Taping Symbol Package Code Form and Dimensions Appearance Quantity

AMMO pack TE *2 DO-35 MHD

Division III

26

85

255

50

5000 pcs

Notes: 1. See “(3) Taping dimensions”, for details of form and dimensions. 2. Recommended taping specifications. (3) Taping dimensions

b/2 b/2

dd e

cL2L1ba

hg

f

Unit: mm

Taping Dimensions Division Symbol I II III

a 64 ± 1.5 38 ± 1.5 38 + 1.5/–1.0 b 52.4 ± 1.2 26 + 1.2/–0 26 + 0.5/–0 c 6 ± 0.5 ← 6 ± 0.4 d ± 0.5 ± 0.5 ± 0.2 e 3.2 min ← ← f 5.0 ± 0.38 5.0 ± 0.38 5 ± 0.3 g ± 1.0 1.0 max ± 0.5 h 1.0 max ← ← | L1-L2 | 1.0 max 1.0 max 0.4 max JEDEC CODE TA21(R) TA11(R) —


62

2.2 Radial Type Taping (1) Application packages

DO-35 MHD


Unit: mm

Taping Symbol Package

Code Form and Dimensions Appearance QuantityRE *2 REB

DO-35

(12.7)

(5.0)

(12.7)

(9.0

)

(18

.0)

(26

.3)

(18

.5)

(16

.0)

Withdrawl direction (right)Withdrawl direction (left)

Insulationcoating

(Cathode po-sition example)

(270)

(23

0) F

R

(45)

Withdrawn from side F

4000 pcs

RX *2

AMMO pack

RY MHD (12.7)

(5.0)

12.7

(20

.5)

(9.0

)

(18

.0)

(270)

F

(40)

(180)

Withdrawn from side F.When withdrawn to the side with the F printed on it formthe glass body packing:RX protrudes from the cathodeRY protrudes from the anode.

2500 pcs

Notes: 1. Dimensions are based on EIAJ RC-1008A vertical taping shape C specifications. 2. Recommended taping specifications. (3) Taping symbol of glass package

Taping Symbol Taping Symbol Taping Width Old New Taping Width Old New

52 mm TA/TK 7 RY 5 TE 8

Radial type RE/RX 6 26 mm

TD/TN 9


63

(4) Taping symbols Radial taping takes the following symbols according to forming shape, cathode position, packing method and direction of withdrawl.

Cathode Position Withdrawl Direction Packing Method Taping Symbol Top Bottom Right Left

RE/REB RX

AMMO pack

RY When withdrawn to the side with the F printed on it form the glass body packing: RX protrudes from the cathode RY protrudes from the anode.

2.3 Embossed Type Taping 2.3.1 8-mm Taping (1) Application packages

LLD MPAK CMPAKMPAK-5 CMPAK-4

URP UFPTURP SFP

MFP12

MP6-8EFP

VSON-5

MP6


Package Packing Form Packing Unit Packing

Specification Code Remarks TR *2 (Taping to Right)

TR withdrawl direction→

LLD Taping

2500 (units/reel)

TL (Taping to Left)

TL withdrawl direction→

TR *2 (Taping to Right)


MPAK-5 VSON-5

Taping

3000 *3 (units/reel)

TL (Taping to Left)




(Marked surface up)

MPAK CMPAK

Taping


TL (Taping to Left)


(Marked surface up) Notes: 1. Missing devices ≤ 0.2% reel, continuous miss = 0/reel. 2. Recommended taping specifications. 3. Refer to (6) Taping Symbols for the details of a packing specification code.


64

Package Packing Form Packing Unit Packing

Specification Code Remarks TR *2 (Taping to Right)

(Marked surface up)


CMPAK-4 Taping


TL (Taping to Left)


(Marked surface up) MFP12 Taping


P *2 (Taping to Right)

Withdrawl direction→

URP Taping







UFP (TURP)

Taping


KR *2 KR withdrawl direction→

SFP Taping



EFP Taping



MP6 MP6-8

Taping


R *2 Withdrawl direction→

Notes: 1. Missing devices ≤ 0.2% reel, continuous miss = 0/reel. 2. Recommended taping specifications. 3. Refer to (6) Taping Symbols for the details of a packing specification code. (3) Taping symbol of resin package

Taping Symbol Taping Width Old New

TR P TL H

8 mm

KR R


65

(4) Taping reel dimensions

φ13.0

± 0

.5

φ1

78

± 2

9.5 ± 0.51.0 ± 0.5

φ 21.0 ± 0.8

2.0 ± 0.5

Label

Unit: mm

(5) Carrier tape and cover tape dimensions

Unit: mm, ( ): reference only Package Dimensions

LLD

4.0 ± 0.1

1.7

5 ±

0.1

(5.6

)

8.0

± 0

.2

3.5

± 0

.12.0 ± 0.054.0 ± 0.1

(1.55)

0.25 ± 0.05

(φ1

.0)

(3.7

)

φ1.5+0.1–0.05

Device

Cover tape Carrier tape

MPAK

4.0 ± 0.1φ1.5

+0.1–0

(5.6

)

4.0 ± 0.1 2.0 ± 0.05

1.7

5 ±

0.1

8.0

± 0

.2

3.5

± 0

.1

(1.4)

0.25 ± 0.05

(φ1

.1)

(3.3

)

Device



66


MPAK-5

4.0 ± 0.1φ1.55 ± 0.10

(5.6

)

4.0 ± 0.1 2.0 ± 0.05

1.7

5 ±

0.1

8.0

± 0

.2

3.5

± 0

.1

(1.5)

0.25 ± 0.05

(φ1

.05

)

(3.3

)

Device


CMPAK

4.0 ± 0.1

φ1.55+0.1–0.05

1.7

5 ±

0.1

(5.6

)

8.0

± 0

.2

3.5

± 0

.12.0 ± 0.054.0 ± 0.1

(1.25)

0.2 ± 0.05

(φ1

.05

)

(2.6

5)

Device


CMPAK-4

4.0 ± 0.1

φ1.55+0.1–0.05

1.7

5 ±

0.1

(5.6

)

8.0

± 0

.2

3.5

± 0

.12.0 ± 0.054.0 ± 0.1

(1.15)

0.2 ± 0.05

(φ1

.05

)

(2.4

)

Device


VSON-5

4.0 ± 0.1

φ1.5

1.7

5 ±

0.1

(5.6

)

8.0

± 0

.2

3.5

± 0

.05

2.0 ± 0.054.0 ± 0.1

0.90 ± 0.10

0.25 ± 0.05

φ1

.0

1.7

5 ±

0.1

+0.1–0

+0.2

–0

Device



67


MFP12 2.0 ± 0.05 4.0 ± 0.1

3.5

± 0

.05

1.7

5 ±

0.1

8.0

± 0

.1

φ1.5 +0.1–0 (0.18)

(2.8

5)

(0.65)

Carrier tape

Device

Cover tape

URP

4.0 ± 0.1

1.7

5 ±

0.1

(5.6

)

8.0

± 0

.2

3.5

± 0

.12.0 ± 0.054.0 ± 0.1

(1.25)

0.25 ± 0.05

(φ1.1

)

(2.9

)

φ1.5+0.1–0

Device


TURP

4.0 ± 0.1

1.7

5 ±

0.1

(5.6

)

8.0

± 0

.2

3.5

± 0

.12.0 ± 0.054.0 ± 0.1

(0.65)

(0.20)

(2.6

5)

φ1.5+0.1–0

Device


UFP

0.2 ± 0.05

(1.8

5)

(1.3

)

(1.9

)

(1.3

5)

(0.73)

8.0

± 0

.2

3.5

± 0

.05

2.7

51

.75

± 0

.1

φ1.55+0.1–0.05

φ 0.5 ± 0.05

4.0 ± 0.12.0 ± 0.05

Device

Cover tape

Carrier tape


68


SFP

0.2 ± 0.05

(1.6

5)

(1.0

7)

(1.7

)

(1.2

)

0.6 ± 0.05

8.0

± 0

.2

3.5

± 0

.05

(2.7

5)

1.7

5 ±

0.1

φ1.55 ± 0.05

φ 0.5 ± 0.05

4.0 ± 0.12.0 ± 0.05

Device

Cover tape

Carrier tape

EFP

Device

Cover tape

Carrier tape

8.0

0 ±

0.1

3.5

± 0

.05

2.7

51

.75

± 0

.1

φ1.55 ± 0.05

φ 0.50 ± 0.05

4.0 ± 0.052.0 ± 0.05

(0.56)

(1.1

5)

(1.1

)

MP6

(0.7

2)

Device

2.0 ± 0.05 4.0 ± 0.05

3.5

0 ±

0.0

31

.75

± 0

.10

8.0

± 0

.10

φ1.5 +0.1–0

(0.20)

Carrier tape

(0.37)Cover tape

MP6-8

2.0 ± 0.05

4.0 ± 0.05

(0.20)

(1.7

3)

(0.37)

Carrier tape

Device

Cover tape

φ1.5 +0.1–0

2.7

51

.75

± 0

.18.0

± 0

.1

(1.7

9)

φ 0.50 ± 0.05

3.5

± 0.

03


69

(6) Taping Symbols Taping of URP package takes the following symbol according to quantity, group in 1 reel etc.

Taping code

Taping direction

Maximum category in 1 reel

Quantity in 1 reel Group End of Group Remarks

TRF [P] — 3000 pcs — — — TRU [P] 4 space TRV [P]

TR 4 3000 pcs 10 + 1n

Non-reflection tape on1 space

C.C system *1

Note: 1. Continuous Connected taping system of variable capacitance diode.

Taping of UFP package takes the following symbols according to quantity, group in 1 reel etc.

Taping code

Taping direction



TRF [P] — — — — TRU [P] 9 space TRV [P]

TR 5

4000 pcs 10 + 1n

1 space + Non-reflection tape on 1 space + 1 space

C.C system *1

KRF [R] — — — — KRU [R] 4 space KRV [R]

KR 10

8000 pcs 10 + 1n

Non-reflection tape on1 space

C.C system *1

Note: 1. Continuous Connected taping system of variable capacitance diode.

Taping of SFP package takes the following symbols according to quantity, group in 1 reel etc.

Taping code

Taping direction



KRF [R] KR — 8000 pcs — — —

Taping of EFP package takes the following symbols according to quantity, group in 1 reel etc.

Taping code

Taping direction



KRF [R] KR — 10000 pcs — — — Note: Characters in [ ] in Taping code are new code.

3. Precautions for Use (1) Close attention should be paid to packages in order to counter dimensional faults of taping etc. Adequate care

must be taken with shipping crates to avoid damage. (2) When removing articles from cases, handle with the taped portions. Putting pressure on diodes can result in pitch

slippage and bending of leads. (3) When storing the products, take care so that packing cases are not damaged by stacking. Make sure the storage

area is free of water leakage.

70

Selection Table According to Main Diode Applications

Recently, the range of use of electronics devices has expanded, and the number of characteristics demanded of diodes had proliferated, though it is difficult, both technologically and economically, to guarantee the entire spectrum of diode characteristics.

Therefore, the characteristics listed in data sheets and other technical literatures are limited to those required for representative applications (main applications) such as the one shown in figure 1.

Of course, it is possible to use diodes in applications outside the scope of data sheets etc., and we suggest you contact Renesas Sales with regard to special applications.

Table 1 shows the general usage outside the scope of data books etc., where diodes are suitable or unsuitable for application.

••

RKV500KKVariable Capacitance Diode for UHF/VHF tuner

REJ03G1279-0100

Rev.1.00

Oct 13, 2005

Features

Low series resistance and good C-V linearity.

• Super small Flat Lead Package (SFP) is suitable for surface mount design.

Ordering Information

Type No. Laser Mark Package Name

Package Code

(Previous Code)

RKV500KK A7 PUSF0002ZB-A

(SFP)

SFP

Pin Arrangement

Cathode mark

Mark

1. Cathode

2. Anode

1 2A7

Figure 1 Data Sheet Application Example

Selection Table According to Main Diode Applications

71

Table 1 Suitability/Unsuitability for Applications other than the main Applications

Main

Application

Note: : Optimal use, : Optimal use, : Conditional use possible (contact Renesas for details), ×: Unusable

General

Detector,

Modulator,

Demodu-

lator

High

Speed

Switching

High

Voltage

Switching

High Fre-

quency

Switching

(band

switch)

Atte-

nuator,

Antenna

Switch

System

Protec-

tion

Constant

Voltage

Zener

Tempe-

rature

Compen-

sated

Varistor

Detector,

Mixer

Schottky

Rectifier,

High Fre-

quency

Rectifier

Elec-

tronic

Tuning

General

detector,

modulator,

demodulator

High speed

switching

High voltage

switching

High

frequency

switching

(band

switch)

Attenuator,

antenna

switch

System

protection

Constant

voltage

Zener

Temperature

compen-

sated

varistor

Detector,

mixer

schottky

Rectifier,

high

frequency

rectifier

Electronic

tuning

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

×

Application other than Main Applications

72

HVU17 Variable Capacitance Diode for VCO

Features • Good linearity of C-V curve. • To be usable at low voltage. • High figure of merit. • Ultra small Resin Package (URP) is suitable for surface mount design.

Ordering Information and Pin Arrangement

Cathode mark

Mark

1 2E1. Cathode

2. Anode

HVU17TRF

Package Name : URPPackage Code : PTSP0002ZA-A

Taping Abbreviation (Quantity)

TRF (3,000 pcs / reel)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 15.0 — — V IR = 10 μA Reverse current IR — — 100 nA VR = 9 V

C1 50.0 — 85.0 VR = 1 V, f = 1 MHz C3 16.1 — 27.3 VR = 3 V, f = 1 MHz

Capacitance

C4.5 5.23 — 8.84

pF

VR = 4.5 V, f = 1 MHz Capacitance ratio n 5.60 — — — C1 / C4.5 Figure of merit Q 50 — — — VR = 2.5 V, f = 10 MHz ESD-Capability *1 — 80 — — V C = 200 pF, Both forward and

reverse direction 1 pulse. Note: 1. Failure criterion ; IR ≥ 100nA at VR =9 V

HVU17

73

Main Characteristics

20

10

10

1.01.0 40

10–8

10–11

10–12

10–9

10–10

100

Reverse voltage VR (V)

Fig.1 Reverse current vs. Reverse voltage

0 4 8 12 16

f = 1MHz

Fig.2 Capacitance vs. Reverse voltage


Ca

pa

cita

nce

C

(

pF

)R

eve

rse

cu

rre

nt

I R

(

A)

74

HVD350B, HVC350B, HVU350B Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n = 2.80 min) • Low series resistance. (rs = 0.50 Ω max) • Good C-V linearity.


1 2B0

Package Name : UFP

Package Code : PWSF0002ZA-A

Package Name : SFP

Package Code: PUSF0002ZB-A

1 2A

HVC350BTRF, HVC350BKRFHVD350BKRF HVU350BTRF

Package Name : URP

Package Code : PTSP0002ZA-A

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



1 2B0

Cathode mark

Mark

1. Cathode

2. Anode




KRF (8,000 pcs / reel)





Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 15 V Reverse current IR2 — — 100

nA VR = 15 V, Ta = 60°C

C1 15.50 — 17.00 VR = 1 V, f = 1 MHz Capacitance C4 5.00 — 6.00

pF VR = 4 V, f = 1 MHz

Capacitance ratio n 2.80 — — — C1 / C4 Series resistance rS — — 0.50 Ω VR = 1 V, f = 470 MHz Note: In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.

Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.

HVD350B, HVC350B, HVU350B

75


0.1 1.0 10

30

25

20

10

5

15

0

f=1MHz

0 16 204 8 12

1.0 10

0

0.1

0.2

0.3

0.4

0.5

0.5

30

Re

ve

rse

cu

rre

nt

IR

(A

)



10−8

10−10

10−12

10−15

10−14

10−13

10−9

10−11



Ca

pa

cita

nce

C

(p

F)

Fig.3 Series resistance vs. Reverse voltage


f=470MHz

Se

rie

s r

esis

tan

ce

r S

(Ω

)

Fig.4 LF vs. Reverse voltage


0.1 1.0 10

-1.5

-1.0

-0.5

0

LF =

Δ(L

og

C)/Δ

(Lo

gV

R)

76

HVD355B, HVC355B, HVU355B Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n = 2.20 min) • Low series resistance. (rs = 0.60 Ω max)


1 2B1

Package Name : UFP


Package Name : SFP


1 2B

HVC355BTRF, HVC355BKRFHVD355BKRF HVU355BTRF

Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



1 2B1

Cathode mark

Mark

1. Cathode

2. Anode










nA VR = 15 V, Ta = 60°C





HVD355B, HVC355B, HVU355B

77


0

0.6

0.2

0.1 1.0 10

0.1

0.3

Se

rie

s r

esis

tan

ce

r

S

(Ω

)

0.4

0.5

0.1 1.0 10–1.5

–1.0

–0.5

0

0.1 1.0 10

12

10

8

4

2

6

00 16 20

10–6

10–8

10–10

4 8 1210–13

10–12

10–11

10–7

10–9





Re

ve

rse

cu

rre

nt

I R

(

A)


Reverse voltage VR (V)C

ap

acita

nce

C

(

pF

)



LF =

∆(L

og

C)/∆

(Lo

gV

R)

Ta = 75°C

Ta = 25°C

f = 470MHz

f = 1MHz

78

HVD359, HVU359 Variable Capacitance Diode for VCO

Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage.


Package Name : SFPPackage Code : PUSF0002ZB-A

1 2G

HVD359KRF HVU359TRF


1. Cathode

2. Anode

Cathode mark

Mark



1 2S

Cathode mark

Mark

1. Cathode

2. Anode







nA VR = 10 V, Ta = 60°C



Capacitance ratio n 3.00 — — — C1/C4 Series resistance rS — — 1.50 Ω VR = 4 V, f =100 MHz ESD-Capability *1 — 200 — — V C = 200 pF, R = 0 Ω, Both forward

and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 20 nA at VR =10 V 2. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,

the solderability of the lead tip has been ignored. Please test and confirm before use.

HVD359, HVU359

79


0 20161284

1.0 10

60

50

40

20

10

30

0

f=1MHz

0.1

10-10

10-9

10-11

10-12

10-13

Fig.2 Capacitance vs. Reverse Voltage


Fig.1 Reverse Current vs. Reverse Voltage


Revers

e c

urr

ent I R

(

A)

Capacitance C

(

pF

)

80

HVD362, HVC362, HVU362 Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n = 3.0 min) • Good C-V linearity.


1 2V2

Package Name : UFP


Package Name : SFP


1 2

HVC362BTRF, HVC362KRFHVD362KRF HVU362TRF

Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



1 2V2

Cathode mark

Mark

1. Cathode

2. Anode






A2





nA VR = 10 V, Ta = 60°C



Capacitance ratio n 3.0 — — — C1 / C4 Series resistance rS — — 2.0 Ω VR = 4 V, f = 100 MHz ESD-Capability *1 — 80 — — V C = 200pF,Both forward and

reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 20nA at VR = 10 V 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVD362, HVC362, HVU362

81


0 4 8 12 16 20 1.0

20

00.1 10

40

60

80

101.0 1000

0.4

0.8

1.2

1.6

2.0

0.2

0.6

1.0

1.4

1.8

0

10–9

10–10

10–11

10–12

10–13

Re

ve

rse

cu

rre

nt I R

(

A)


Fig.1 Reverse current vs. Reverse voltageC

ap

acita

nce

C

(

pF

)

f = 1MHz


Reverse voltage VR (V)L

F =

Δ(L

og

C)/Δ

(Lo

gV

R)

Fig.4 Linearity factor vs. Reverse voltage


1.0 100.1

–1.5

–2.0

–1.0

–0.5

f = 1MHzf = 100MHz

Se

rie

s r

esis

tan

ce

r

S (Ω

)



82

HVC383B, HVU383B Variable Capacitance Diode for VCO



1 2F4

Package Name : UFP


HVC383BTRF, HVC383BKRF HVU383BTRF

Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode



1 2F4

Cathode mark

Mark

1. Cathode

2. Anode







Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 nA VR = 15 V Reverse current IR2 — — 100 VR = 15 V, Ta = 60°C C1 19.0 — 21.0 VR = 1 V, f = 1 MHz C4 8.50 — 10.0 VR = 4 V, f = 1 MHz

Capacitance

C7 4.50 — 2.5

pF

VR = 7 V, f = 1 MHz n1 2.00 — — — C1/C4 Capacitance ratio n2 3.50 — — — C1/C7

Series resistance rs — — 0.5 Ω VR = 1 V, f = 470 MHz Note: 1. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVC383B, HVU383B

83


0.1

0.8

0.4

0.1 1.0 10

0.2

0.6

0.1 1.0 10

40

20

0

10

30

1.0 100 16 204 8 12

Ta=75°C

Ta=50°C

Ta=25°C

Revers

e c

urr

ent I R

(

A)

10–13

10–11

10–12

10–9

10–10



10–8

10–6

10–7

f = 1MHz



apacitance C

(

pF

)

–1.4

–0.6

–0.2

–1.0

LF =

Δ(L

og

C)/Δ

(LogV

R)



0

f = 470MHz

Series r

esis

tance r

S (Ω

)



84

HVD365, HVC365 Variable Capacitance Diode for VCO

Features • High capacitance ratio and good C-V linearity.


1 2V6

HVC365TRF, HVC365KRF

1 2

HVD365KRF

H

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Package Name : SFP




Package Name : UFP








Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR =10 V Reverse current IR2 — — 100

nA VR = 10 V, Ta = 60°C



Capacitance ratio n 3.00 — — — C1 / C4 Series resistance rS — — 1.50 Ω VR = 4 V, f = 100 MHz ESD-Capability *1 — 200 — — V C = 200 pF , R = 0 Ω, Both forward

and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 20 nA at VR = 10 V 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVD365, HVC365

85


1.0 10

30

5

030

15

20

25

f=1MHz

10

0 20161284

10-10

10-12

10-13

10-14

10-11





Revers

e c

urr

ent I R

(

A)

Capacitance C

(

pF

)

86

HVL368C, HVD368B, HVC368B Variable Capacitance Diode for VCO

Features • Narrow terminal Capacitance deviation. • Low series resistance. (rs = 1.1 Ω max) • Good C-V linearity.


1 2B4

Package Name : UFP


Package Name : SFP


1 2

HVC368BTRF, HVC368BKRFHVD368BKRF

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



Package Name : EFP


1 2C

HVL368CKRF

1. Cathode

2. Anode

Cathode mark

Mark



E

TRF (4,000 pcs / reel)KRF (8,000 pcs / reel)






nA VR = 10 V, Ta = 60°C


Capacitance

C3 5.0 — 6.0

pF

VR = 3 V, f = 1 MHz Capacitance ratio n 2.2 — — — C1 / C3 Series resistance rS — — 1.1 Ω VR = 2 V, f = 470 MHz Note: In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting

plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.

HVL368C, HVD368B, HVC368B

87


Re

ve

rse

cu

rre

nt

I R

(

A)

Ca

pa

cita

nce

C

(

pF

)

Se

rie

s r

esis

tan

ce

r

S

(Ω

)

0

0.2

0.4

0.6

0.8

1.0

1.2

1.0 100.1

0 5 10 15

25

5

0

10

15

20

1.0 100.1

10–10

10–11

10–12

10–13

10–14

f = 1MHz

f = 470MHz


Fig.1 Reverse current vs. Reverse voltage Fig.2 Capacitance vs. Reverse voltage




88

HVD374B, HVC374B Variable Capacitance Diode for VCO

Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage.


1 2B6

HVC374BTRF, HVC374BKRF

1 2

HVD374BKRF

Y

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Package Name : SFP




Package Name : UFP






Item Symbol Ratings Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C



nA VR = 10 V, Ta = 60°C



Capacitance ratio n 1.680 — 1.750 — C1/C2 Series resistance rs — — 1.20 Ω VR = 1 V, f = 470 MHz Note: The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is considered as

unquestioned. Please kindly consider soldering nature.

HVD374B, HVC374B

89



0

0.2

0.4

0.6

0.8

1.0

f = 470MHz


1.2

1.0 100.1

LF =

D(L

og

C)/

D(L

og

VR

)

1.0 10–1.5

–1.0

–0.5

0

0 5 10 15 1.0 10

25

5

040

10

15

20

f = 1MHz

100

10–14

10–13

10–10

10–11

10–12



Se

rie

s r

esis

tan

ce

r

S (Ω

)



Re

ve

rse

cu

rre

nt I R

(

A)

Ca

pa

cita

nce

C

(

pF

)



90

HVL375C, HVC375B Variable Capacitance Diode for VCO

Features • Narrow terminal Capacitance deviation. • Low series resistance. (rs = 1.1 Ω max) • Good C-V linearity.


1 2H

Cathode mark

Mark

1. Cathode

2. Anode

Package Code: PXSF0002ZA-A

HVL375CKRF



Package Name : EFP

1 2B8


Cathode mark

Mark

1. Cathode

2. Anode

Package Name : UFP









nA VR = 10 V, Ta = 60°C


Capacitance

C4 3.3 — 4.0

pF

VR = 4 V, f = 1 MHz Capacitance ratio n 4.0 — — — C1 / C4 Series resistance rS — — 1.1 Ω VR = 2 V, f = 470 MHz Note: In the EFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVL375C, HVC375B

91


0

1.2

0.4

0.1 1.0 10

0.2

0.6

Se

rie

s r

esis

tan

ce

r

s

(Ω

)

0.8

1.0

0.1 1.0 100 15

10–10

5 1010–14

10–12

10–11



10–13

25

5

0

10

15

20

f = 1MHz

f = 470MHz



Re

ve

rse

cu

rre

nt

I R

(

A)



ap

acita

nce

C

(

pF

)

92


Features • High capacitance ratio (n = 4.3min) and good C-V linearity. • High Q circuit can be composed due to low series resistance. (rs = 0.8 Ω max) • To be usable at low voltage.


1 2B9


1 2

HVD376BKRF

B1

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Package Name : SFP




Package Name : UFP









nA VR = 10 V, Ta = 60°C

C0.2 39.5 — 44.5 VR = 0.2V, f = 1MHz C1 25.0 — 28.5 VR = 1V, f = 1MHz C2.3 8.75 — 12.05 VR = 2.3V, f = 1MHz

Capacitance

C4 4.80 — 6.80

pF

VR = 4V, f = 1MHz n1 4.30 — — — C1/C4 Capacitance ratio n2 3.55 — — — C0.2/C2.3

Series resistance rS — — 0.8 Ω VR = 1 V, f = 470 MHz Note: In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVD376B, HVC376B

93


0 4 8 12 16 20 1.0

50

10

010

20

30

40

0

0.1

f = 1MHz

1.00.1 10

0.6

0.2

0.1

0.3

0.4

0.5

Ca

pa

cita

nce

C

(p

F)

10–13

10–11

10–12

10–9

10–10



Se

rie

s r

esis

tan

ce

r

S (Ω

)



f = 470MHz



Re

ve

rse

cu

rre

nt I R

(

A)

94




1 2F6


1 2

HVD385BKRF

M

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Package Name : SFP




Package Name : UFP









nA VR = 10 V, Ta = 60°C

C0.5 7.20 — 7.70 VR = 0.5 V, f = 1 MHz Capacitance C2.5 2.70 — 3.20

pF VR = 2.5 V, f = 1 MHz

Capacitance ratio n 2.43 — 2.57 — C0.5 / C2.5 Series resistance rS — — 0.75 Ω VR = 1 V, f = 470 MHz Note: In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVD385B, HVC385B

95


0.1 1.0–1.4

–0.8

0

–1.0

–0.6

–0.4

–0.2

0 5

12

10

8

4

2

6

0

Ca

pa

cita

nce

C

(

pF

)

1.0

0.4

01.0 3.0 5.0

0.2

0.6

0.8

0 510–14

10–12

10–13

10 15

10–10

10–11

10.0

LF =

∆(L

og

C)/∆

(Lo

gV

R)

Se

rie

s re

sis

tan

ce

r

S

(Ω

)





f=470MHz

2.0 4.00





Re

ve

rse

cu

rre

nt I R

(

A)

f=1MHz

1 2 3 4

–1.2

96

HVC386B Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n = 1.80 min) • Low series resistance. (rs = 0.85Ω max) • Ultra small Flat Lead Package (UFP) is suitable for compact and high-density surface mount design.

Ordering Information AND Pin Arrangement

1 2

Cathode mark

Mark

1. Cathode

2. Anode

F7

Package Code: PWSF0002ZA-A



Package Name : UFP







nA VR = 15 V, Ta = 60°C



Capacitance ratio n 1.80 — — — C1 / C4 Series resistance rS — — 0.85 Ω VR = 5 V, f = 470 MHz Note: In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,


HVC386B

97


301.0 10

60

50

20

10

00.5

30

40

f=1MHz

301.0 100.5

0 5

10–12

10–13

10 15

10–10

10–11



Revers

e c

urr

ent I R

(

A)

Capacitance C

(

pF

)Fig.2 Capacitance vs. Reverse voltage


–2.0

–1.5

–0.5

–1.0

0

0.5 1.0 10 30



LF =

∆(L

og

C)/∆

(LogV

R)

1.0

0.4

0

0.2

0.6

0.8

Series re

sis

tance r

S (Ω

)



f=470MHz

10–14

98




1 2B2


1 2

HVD358BKRF

C

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Package Name : SFP




Package Name : UFP









nA VR = 15 V, Ta = 60°C





HVD358B, HVC358B

99


0 16 204 8 12 1.0 10

30

25

20

10

5

15

0

f=1MHz

0.4

0.2

00.1 1.0 10

0.1

0.3

10−8

10−10

10−12

10−15

10−14

10−13

10−9

10−11

Re

ve

rse

cu

rre

nt

IR

(A

)




Ca

pa

cita

nce

C

(p

F)

0.1



-1.5

-1.0

-0.5

0

LF =

∆(L

og

C)/∆

(Lo

gV

R)

0.1 1.0 10



f=470MHz

Se

rie

s r

esis

tan

ce

r S

(Ω

)

100

HVL396C, HVD396C Variable Capacitance Diode for VCO



1 27 1 2

HVD396CKRF

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


HVL396CKRF



Package Name : SFP




Package Name : EFP

U





nA VR = 10 V, Ta = 60°C



Capacitance ratio n 2.62 — — — C1 / C4 Series resistance rS — — 0.40 Ω VR = 1 V, f = 470 MHz Note: In the EFP and SFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVL396C, HVD396C

101


10–14

10–12

10–13

10–10

10–11

0 5 10 15

0 1.0 6.02.0 3.0 4.0 5.0

0.45

0.25

0.15

0.20

0.30

0.35

0.40

f=470MHz



Re

ve

rse

cu

rre

nt

I R

(

A)



ap

acita

nce

C

(

pF

)



Se

rie

s r

esis

tan

ce

r

S

(Ω

)30

25

20

10

5

15

00 54321

f=1MHz

102

HVL399C, HVD399C Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n = 2.30 to 2.46) • Low series resistance. (rs = 0.40 Ω max)


1 26 1 2

HVD399CKRF

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


HVL399CKRF



Package Name : SFP




Package Name : EFP

A3





nA VR = 10 V, Ta = 60°C

C0.5 18.5 — 20.0 VR = 0.5V, f = 1 MHz Capacitance C2.5 7.30 — 8.60

pF VR = 2.5 V, f = 1 MHz

Capacitance ratio n 2.30 — 2.46 — C0.5 / C2.5 Series resistance rS — — 0.40 Ω VR = 1 V, f = 470 MHz Note: In the EFP and SFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVL399C, HVD399C

103


10–13

10–11

10–12

10–9

10–10

0 5 10 15

0 1 62 3 4 5

0.30

0.20

0.15

0.25

0 531 2 4



Re

ve

rse

cu

rre

nt I R

(

A)



ap

acita

nce

C

(

pF

)



Series r

esis

tance

rS

(Ω

)

f = 470MHz

10

5

20

15

25

30

0

f = 1MHz

104

RKV600KP, HVL355C Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n = 2.35 min) • Low series resistance. (rs = 0.60 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.( RKV600KP)


B1 2

HVL355CKRF

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Package Code: PXSN0002ZB-A

RKV600KP R


R (10,000 pcs / reel)

Package Name : EFP




Package Name : MP6

1

Cathode mark

Mark

21





nA VR = 15 V, Ta = 60°C



Capacitance ratio n 2.35 — 2.55 — C1 / C4 Series resistance rS — — 0.60 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,


RKV600KP, HVL355C

105


Se

rie

s r

esis

tan

ce

r

S

(Ω

)

0 16 20

10–6

10–8

10–10

4 8 1210

–13

10–12

10–11

10–7

10–9





Re

ve

rse

cu

rre

nt I R

(

A)



ap

acita

nce

C

(

pF

)

Ta = 75°C

Ta = 25°C

0

0.6

0.2

0.4

f = 470MHz

0.8

0 54321

1.0

12

10

8

4

2

6

00 54321

f = 1MHz

106

HVL358C Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n = 2.20 min) • Low series resistance. (rs = 0.40 Ω max) • Good C-V linearity • Extremely small Flat Lead Package (EFP) is suitable for compact and high-density surface mount design.


Cathode mark

Mark

1. Cathode

2. Anode

1 28

HVL358CKRF

Package Name : EFP

Package Code : PXSF0002ZA-A







nA VR = 15 V, Ta = 60°C



Capacitance ratio n 2.20 — 2.43 — C1 / C4 Series resistance rS — — 0.40 Ω VR = 1 V, f = 470 MHz Note: In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,


HVL358C

107


0 16 204 8 12

0.4

0.2

00.1 1.0 10

0.1

0.3

10–11

10–10

10–9

10–8

10–13

10–12

10–15

10–14

f=470MHz

0.1 1.0 10

30

25

20

10

5

15

0

Ca

pa

cita

nce

C

(

pF

)



f=1MHz

Se

rie

s r

esis

tan

ce

r

S

(Ω

)





Re

ve

rse

cu

rre

nt I R

(

A)

108

RKV601KP, HVL385C Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n = 2.43 min) • Low series resistance. (rs = 0.75 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.(RKV601KP)


T1 1 2

HVL385CKRF

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


RKV601KP R


R (10,000 pcs / reel)

Package Name : EFP




Package Name : MP6

Cathode mark

Mark

22





nA VR = 10 V, Ta = 60°C


pF VR = 2.5 V, f = 1 MHz

Capacitance ratio n 2.43 — 2.57 — C0.5 / C2.5 Series resistance rS — — 0.75 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,


RKV601KP, HVL385C

109


0

0.6

0.2

0.4

12

10

8

4

2

6

00 16 20

10–6

10–8

10–10

4 8 1210–13

10–12

10–11

10–7

10–9

Ta = 75°C

Ta = 25°C

f = 470MHz

f = 1MHzf=1MHz

0 54321

0.8

0 54321

9

7

3

1

5

11

1.0



Re

ve

rse

cu

rre

nt I R

(

A)

Ca

pa

cita

nce

C

(

pF

)



Se

rie

s re

sis

tan

ce

r

S (Ω

)



110

RKV603KP, RKV603KL Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n = 2.10 to 2.40) • Low series resistance. (rs = 0.75 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.(RKV603KP)


91 1 2

RKV603KL R

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


RKV603KP R


R (10,000 pcs / reel)

Package Name : EFP



R (10,000 pcs / reel)

Package Name : MP6

Cathode mark

Mark

2B





nA VR = 10 V, Ta = 60°C


pF VR = 2.5 V, f = 1 MHz

Capacitance ratio n 2.10 — 2.40 — C0.5/C2.5 Series resistance rS — — 0.75 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,


RKV603KP, RKV603KL

111

Main Characteristics S

erie

s r

esis

tan

ce

r

S

(Ω

)10–6

10–8

10–10

10–13

10–12

10–11

10–7

10–9





Re

ve

rse

cu

rre

nt I R

(

A)



ap

acita

nce

C

(

pF

)

0

0.6

0.2

0.4

0.8

0 54321

1.0

f = 470MHz

0

2

4

6

8

0.1 1 10

f = 1MHz

10

0 15 205 10

112




A1 1 2

RKV604KL R

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


RKV604KP R


R (10,000 pcs / reel)

Package Name : EFP



R (10,000 pcs / reel)

Package Name : MP6

Cathode mark

Mark

2C





nA VR = 15 V, Ta = 60°C



Capacitance ratio n 1.73 — 2.10 — C1/C3 Series resistance rS — — 0.70 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.


RKV604KP, RKV604KL

113


Se

rie

s r

esis

tan

ce

r

S

(Ω

)

0 16 20

10–6

10–8

10–10

4 8 1210–13

10–12

10–11

10–7

10–9





Re

ve

rse

cu

rre

nt I R

(

A)



ap

acita

nce

C

(

pF

)

0

0.6

0.2

0.4

0.8

0 54321

1.0

f = 470MHz

0.1 1 10

f = 1MHz

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

114




B1 1 2

RKV605KL R

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode


RKV605KP R


R (10,000 pcs / reel)

Package Name : EFP



R (10,000 pcs / reel)

Package Name : MP6

Cathode mark

Mark

2D





nA VR = 10 V, Ta = 60°C


pF VR = 2.5 V, f = 1 MHz

Capacitance ratio n 2.02 — 2.26 — C0.5/C2.5 Series resistance rS — — 0.40 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.


RKV605KP, RKV605KL

115


Se

rie

s r

esis

tan

ce

r

S

(Ω

)

10–6

10–8

10–10

10–13

10–12

10–11

10–7

10–9





Re

ve

rse

cu

rre

nt I R

(

A)



ap

acita

nce

C

(

pF

)

00 54321

f = 470MHz

0.1 1 10

f = 1MHz

0 15 205 10

1.2

0.4

0.2

0.6

0.8

1.0

f = 470MHz

30

25

20

10

5

15

0

116




C1 1 2

RKV606KL R

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


RKV606KP R


R (10,000 pcs / reel)

Package Name : EFP



R (10,000 pcs / reel)

Package Name : MP6

Cathode mark

Mark

2H





nA VR = 15 V, Ta = 60°C





RKV606KP, RKV606KL

117


Se

rie

s r

esis

tan

ce

r

S

(Ω

)10–6

10–8

10–10

10–13

10–12

10–11

10–7

10–9





Re

ve

rse

cu

rre

nt I R

(

A)



ap

acita

nce

C

(

pF

)

00 54321

f = 470MHz

f = 1MHz

0 15 205 10

0.2

0.1

0.3

0.4

0.5

f = 470MHz

6

5

4

2

1

3

0

0.7

0.6

1 52 3 40

118




D1 1 2

RKV607KL R

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


RKV607KP R


R (10,000 pcs / reel)

Package Name : EFP



R (10,000 pcs / reel)

Package Name : MP6

Cathode mark

Mark

2J





nA VR = 15 V, Ta = 60°C





RKV607KP, RKV607KL

119


Se

rie

s r

esis

tan

ce

r

S

(Ω

)

0 16 20

10–6

10–8

10–10

4 8 1210–13

10–12

10–11

10–7

10–9





Re

ve

rse

cu

rre

nt I R

(

A)



ap

acita

nce

C

(

pF

)

0

0.6

0.2

0.4

0.8

0 54321

1.0

f = 470MHz

f = 1MHz

04 51 2 30

1

2

3

4

5

120




E1 1 2

RKV608KL R

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


RKV608KP R


R (10,000 pcs / reel)

Package Name : EFP



R (10,000 pcs / reel)

Package Name : MP6

Cathode mark

Mark

2N





nA VR = 15 V, Ta = 60°C





RKV608KP, RKV608KL

121


Se

rie

s r

esis

tan

ce

r

S

(Ω

)

0 16 20

10–6

10–8

10–10

4 8 1210–13

10–12

10–11

10–7

10–9





Re

ve

rse

cu

rre

nt I R

(

A)



ap

acita

nce

C

(

pF

) 5

4

2

1

3

01 52 3 4

6

0

f = 1MHz

7

0.7

0.3

00 1 5

0.1

0.4

0.5

0.6

f = 470MHz

2 3 4

0.2

0.8

122

HVB350BYP Silicon Epitaxial Planar Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n = 2.8 min) • Low series resistance. (rs = 0.5 max) • Good C-V linearity. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.


1. Anode

2. Anode

3. Cathode

4. Cathode(Top View) (Top View)

21

34

V1

21

34HVB350BYPTR

Package Name : CMPAK-4

Package Code : PTSP0004ZB-A


TR (3,000 pcs / reel)





nA VR = 15 V, Ta = 60°C



Capacitance ratio n 2.8 — — — C1 / C4 Series resistance rs — — 0.5 Ω VR = 1 V, f = 470 MHz Note: 1. Per one device.

HVB350BYP

123


0 16 20

10-6

10-8

10-10

4 8 1210-13

10-12

10-11

10-7

10-9

0.1 1.0 10

30

25

20

10

5

15

0

f=1MHz

1.0 100

0.1

0.2

0.3

0.4

0.5

0.5

30

f=470MHz

0.1 1.0 10-1.5

-1.0

-0.5

0

Ca

pa

cita

nce

C

(

pF

)L

F =

∆(L

og

C)

/ ∆

(Lo

g V

R)

Se

rie

s r

esis

tan

ce

r

S

(Ω

)









Re

ve

rse

cu

rre

nt

I R

(

A)

124

RKV650KP, RKV650KL Variable Capacitance Diode for Digital Audio

Features • Most suitable for terrestrial digital TV broadcasts capable Mobile phones. • High capacitance ratio. (n = 3.25 min) • Low series resistance. (rs = 0.75 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKV650KP)


31 1 2

RKV650KL R

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


RKV650KP R


R (10,000 pcs / reel)

Package Name : EFP



R (10,000 pcs / reel)

Package Name : MP6

Cathode mark

Mark

29





nA VR = 10 V, Ta = 60°C


pF VR = 2.5 V, f = 1 MHz

Capacitance ratio n 3.25 — 3.70 — C0.5 / C2.5 Series resistance rS — — 0.75 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.


RKV650KP, RKV650KL

125


0.1 1.0 10

12

10

8

4

2

6

0

f=1MHz

Ca

pa

cita

nce

C

(

pF

)

0 410–13

10–11

10–12

8

10–9

10–10

Se

rie

s re

sis

tan

ce

r

S

(Ω

)







Re

ve

rse

cu

rre

nt I R

(

A)

2 6 10

0

0.1

0.2

0.3

0.4

0.5

0.6

1.0 100.1

f = 470MHz

0.7

126


Features • Most suitable for terrestrial digital TV broadcasts capable Mobile phones. • High capacitance ratio. (n = 2.28 to 2.90) • Low series resistance. (rs = 1.1 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKV652KP)


71 1 2

RKV652KL R

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


RKV652KP R


R (10,000 pcs / reel)

Package Name : EFP



R (10,000 pcs / reel)

Package Name : MP6

Cathode mark

Mark

2E





nA VR = 10 V, Ta = 60°C



Capacitance ratio n 2.28 — 2.90 — C1/C3 Series resistance rS — — 1.1 Ω VR = 1 V, f =470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.


RKV652KP, RKV652KL

127


Se

rie

s r

esis

tan

ce

r

S

(Ω

)





Re

ve

rse

cu

rre

nt I R

(

A)



ap

acita

nce

C

(

pF

)

10–11

10–10

10–12

10–13

10–14

6

1

0

3

4

5

f=1MHz

2

10 2 3

0.3

0.4

0.5

0.6

0.7

0.8

0.9

f = 470MHz

0 1 2 3

0 8 102 4 6

128


Features • Most suitable for terrestrial digital TV broadcasts capable Mobile phones. • High capacitance ratio. (n = 2.40 to 3.05) • Low series resistance. (rs = 1.8 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKV653KP)


81 1 2

RKV653KL R

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


RKV653KP R


R (10,000 pcs / reel)

Package Name : EFP



R (10,000 pcs / reel)

Package Name : MP6

Cathode mark

Mark

2F





nA VR = 10 V, Ta = 60°C



Capacitance ratio n 2.40 — 3.05 — C1/C3 Series resistance rS — — 1.8 Ω VR = 1 V, f =470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.


RKV653KP, RKV653KL

129


Se

rie

s r

esis

tan

ce

r

S

(Ω

)





Re

ve

rse

cu

rre

nt I R

(

A)



ap

acita

nce

C

(

pF

)

10–11

10–10

10–12

10–13

10–14

6

1

0

3

4

5

f=1MHz

2

10 2 3

f = 470MHz

0 1 2 30.5

0.7

0.9

1.1

1.3

1.5

1.7

0 8 102 4 6

130

HVC316 Variable Capacitance Diode for BS/CS Tuner

Features • High capacitance ratio (n = 9.0 min) • Low series resistance. (rs = 2.2 Ω max)


1 2N


Cathode mark

Mark

1. Cathode

2. Anode

Package Name : UFP









nA VR = 30 V, Ta = 60°C


pF VR = 25V, f = 1 MHz

Capacitance ratio n 9.0 — — — C1 / C25 Series resistance rS — — 2.20 Ω VR = 1 V, f = 470 MHz Matching error ∆C/C *1 — — 6.00 % VR = 1 to 25 V, f = 1 MHz Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆C/C continuous in a reel,

expect extention to another group. Calculate Matching Error,

(Cmax – Cmin)

Cmin∆C/C = × 100 (%)

2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVC316

131


0 10 20 30 40 50

Re

ve

rse

cu

rre

nt

IR

(A

)



1.0 10

10

2

0

Ca

pa

cita

nce

C

(p

F)

30

4

6

8

1.0 10

2.0

0.4

0

Se

rie

s r

esis

tan

ce

r S

(Ω

)



0.8

1.2

1.6

1.0 10

0

−1.0

−1.530

−0.5

LF =

∆(L

og

C)/∆

(Lo

gV

R)

10-12

10-11

10-9

10-8

10-7

10-6

10-10

10-13





f=470MHz

f=1MHz

132

HVD326C, HVC326C, HVU326C Variable Capacitance Diode for UHF/VHF Tuner

Features • Low voltage type (tuning voltage 1 to 10 V), it is suitable for ET without DC/DC converter. • Low series resistance. (rs = 0.6 Ω max) and good C-V linearity.


1 2A9

Package Name : UFP


Package Name : SFP


1 2A1

HVC326CTRF, HVC326CKRFHVD326CKRF HVU326CTRF

Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



1 2A9

Cathode mark

Mark

1. Cathode

2. Anode










nA VR = 10 V, Ta = 60°C


pF VR = 10 V, f = 1 MHz

Capacitance ratio n 6.0 — — — C1 / C10 Series resistance rS — — 0.6 Ω VR = 5 V, f = 470 MHz Matching error ∆C/C *2 — — 2.0 % VR = 1 to 10 V, f = 1 MHz Notes: 1. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.

Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use. 2. C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆C/C continuous in a reel,


∆C/C = × 100 (%)(Cmax – Cmin)

Cmin

HVD326C, HVC326C, HVU326C

133


0 10 20 30 40 50 0.1 1.0

25

5

010

10

15

20

0.1 1.0 100

0.2

0.4

0.8

0.6

1.0

f = 1MHz

Se

rie

s r

esis

tan

ce

r S

(Ω

)





Re

ve

rse

cu

rre

nt I R

(

A)

10–6

10–8

10–9

10–10

10–13

10–7

10–12

10–11 Ca

pa

cita

nce

C

(p

F)



f = 470MHz

134

RKV500KK, RKV500KJ, RKV500KG Variable Capacitance Diode for UHF/VHF Tuner

Features • Low series resistance and good C-V linearity.


1 2E4

Package Name : UFP


Package Name : SFP


1 2A7

RKV500KJ P, RKV500KJ RRKV500KK R RKV500KG P

Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark


P (3,000 pcs / reel)

1 2E4

Cathode mark

Mark

1. Cathode

2. Anode




R (8,000 pcs / reel)



Item Symbol Value Unit Peak reverse voltage VRM * 35 V Reverse voltage VR 34 V Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: RL = 10 kΩ



nA VR = 32 V, Ta = 60°C


pF VR = 25 V, f = 1 MHz



∆C/C = × 100 (%)(Cmax – Cmin)

Cmin 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


RKV500KK, RKV500KJ, RKV500KG

135


0 10 20 30 40 50 1.0 10

25

5

040

10

15

20

1.0 10 400

0.1

0.2

0.3

0.4

0.5

0.6

0.7

1.0 10

0

40

Re

ve

rse

cu

rre

nt

I R

(

A)

10–13

10–11

10–12

10–9

10–10



10–8

10–6

10–7



Ca

pa

cita

nce

C

(

pF

)

f = 1MHz

–1.5

–0.5

–1.0

LF =

∆(L

og

C)/∆

(Lo

gV

R)



Se

rie

s r

esis

tan

ce

r

S

(Ω

)



f = 470MHz

136

HVD327C, HVC327C, HVU327C Variable Capacitance Diode for VHF Tuner

Features • Low voltage type (tuning voltage 1 to 10V), it is suitable for ET without DC/DC converter. • High capacitance ratio (n = 11.0 min). • Low series resistance and good C-V linearity.


1 2E3

Package Name : UFP


Package Name : SFP


1 2A4


Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



1 2E3

Cathode mark

Mark

1. Cathode

2. Anode










nA VR = 10 V, Ta = 60°C


pF VR = 10 V, f = 1 MHz

Capacitance ratio n 11.0 — — — C1/C10 Series resistance rS — — 0.8 Ω VR = 5 V, f = 470 MHz Matching error ∆C/C *1 — — 2.0 % VR = 1 to 10 V, f = 1 MHz Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆C/C continuous in a reel,


∆C/C = × 100 (%)(Cmax – Cmin)




137


1.0 100

0.6

0.2

0.8

0.4

0.5

1.0

30



f = 470MHz



Re

ve

rse

cu

rre

nt I R

(

A)

Ca

pa

cita

nce

C

(

pF

)



Se

rie

s

resis

tan

ce

r

S (Ω

)

0 510–13

10–11

10–12

10 15

10–9

10–10

f = 1MHz

1.0 101.0

0.5

10

100

30

f = 1MHz

138

HVD328C, HVC328C, HVU328C Variable Capacitance Diode for VHF Tuner

Features • Low voltage type (tuning voltage 1 to 10 V), it is suitable for ET without DC/DC converter. • High capacitance ratio (n = 14.5 min) and suitable for wide band tuner. • Low series resistance and good C-V linearity.


1 2V9

Package Name : UFP


Package Name : SFP


1 2A5


Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



1 2V9

Cathode mark

Mark

1. Cathode

2. Anode










nA VR = 10 V, Ta = 60°C


pF VR = 10 V, f = 1 MHz

Capacitance ratio n 14.5 — — — C1/ C10 Series resistance rs — — 1.2 Ω VR = 5 V, f = 470 MHz Matching error ∆C/C *1 — — 2.0 % VR = 1 to 10 V, f = 1 MHz Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆C/C continuous in a reel,

expect extention to another group. Calculate Matching

∆C/C = × 100 (%)(Cmax – Cmin)




139




Re

ve

rse

cu

rre

nt

I R

(

A)

Ca

pa

cita

nce

C

(

pF

)Reverse voltage VR (V)




Se

rie

s r

esis

tan

ce

r

S

(Ω

)

0 510–13

10–11

10–12

10 15

10–9

10–10

1.0 100

0.6

0.2

0.8

0.4

0.5

1.0

30

f = 470MHz

1.2

1.0 10

1.0

0.5

10

30

100

f = 1MHz

140

RKV501KK, RKV501KJ, RKV501KG Variable Capacitance Diode for VHF Tuner

Features • High capacitance ratio (n = 11.0 min). • Low series resistance and good C-V linearity.


1 2E5

Package Name : UFP


Package Name : SFP


1 2A8


Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



1 2E5

Cathode mark

Mark

1. Cathode

2. Anode







Item Symbol Value Unit Peak reverse voltage VRM * 35 V Reverse voltage VR 34 V Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: RL = 10 kΩ



nA VR = 32 V, Ta = 60°C


pF VR = 25 V, f = 1 MHz



∆C/C = × 100 (%)(Cmax – Cmin)




141


0 10 20 30 40 50 1.0 10

60

50

20

10

00.5

30

40

30

1.0 100

0.6

0.2

0.8

0.4

0.5

1.0

30 0.5 101.0 30

10–12

10–13

10–10

10–11

10–7

10–8

10–6

10–9

f = 1MHz



–2.0

–1.5

–1.0

–0.5

0.0

f = 470MHz



Revers

e c

urr

ent I R

(

A)

Capacitance C

(

pF

)



Series re

sis

tance r

S (Ω

)



LF =

∆ (

LogC

) / ∆

(LogV

R)

142

RKV502KK, RKV502KJ, RKV502KG Variable Capacitance Diode for VHF Tuner

Features • High capacitance ratio (n = 14.5 min) and suitable for wide band tuner. • Low series resistance and good C-V linearity.


1 2E6

Package Name : UFP


Package Name : SFP


1 2A9


Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



1 2E6

Cathode mark

Mark

1. Cathode

2. Anode







Item Symbol Value Unit Peak Reverse voltage VRM * 35 V Reverse voltage VR 34 V Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: RL = 10 kΩ



nA VR = 32 V, Ta = 60°C


pF VR = 25 V, f = 1 MHz



∆C/C = × 100 (%)(Cmax – Cmin)

Cmin 2. In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.



143


0 10 20 30 40 50 1.0 10

60

50

20

10

00.5

30

40

30

f = 1MHz

1.0 100

0.4

0.8

1.2

1.6

0.5

2.0

30

0.2

0.6

1.0

1.4

1.8 f = 470MHz

0.5 1.0 10

-1.5

-1.0

-0.5

0

-2.030

10–6

10–8

10–9

10–10

10–13

10–7

10–12

10–11



Revers

e c

urr

ent I R

(

A)

Capacitance C

(

pF





Series r

esis

tance r

S (Ω

)



LF =

∆(L

og

C)/∆

(Lo

gV

R)

144

HVC308A Variable Capacitance Diode for TV Tuner

Features • Low series resistance. (rs = 0.95 Ω max)


1 2V

HVC308ATRF, HVC308AKRF

Cathode mark

Mark

1. Cathode

2. Anode

Package Name : UFP









nA VR = 30 V, Ta = 60°C


pF VR = 20 V, f = 1 MHz

Capacitance ratio n 7.12 — — — C2/C20 Series resistance rs — — 0.95 Ω VR = 5 V, f = 470 MHz Note: In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,


HVC308A

145


0 10 50403020 1.0 10

25

5

040

10

15

20

1.0 10

0.6

0.4

040

0.2

1.2

1.0

0.8

1.0 10

0

40

Re

ve

rse

cu

rre

nt

I R

(

A)

10–13

10–11

10–12

10–9

10–10




Ca

pa

cita

nce

C

(

pF

)

LF =

Δ(L

og

C)/Δ

(Lo

gV

R)



–1.5

–0.5

–1.0

Se

rie

s r

esis

tan

ce

r

S

(Ω

)



f = 470MHz

146

HVM16 Variable Capacitance Diode for FM Tuner

Features • Worked by 8V, suitable for small manufacture sources of electric power.


1. Anode

2. Anode

3. Cathode

(Top View)

2 1

3

T3

(Top view)

HVM16TR

Package Name : MPAK

Package Code: PLSP0003ZC-A


TR(3,000 pcs / reel)

2 1

3



Electrical Characteristics * (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 14.0 — — V IR = 10 µA Reverse current IR — — 50.0 nA VR = 9 V



Capacitance ratio n 1.65 — 1.75 — C2/C8 Figure of merit Q 75.0 — — — VR = 2 V, f = 100 MHz Note: Per one device.

HVM16

147


200 4 16128

10

100

10

1.01.0 40

10–9

10–10

10–13

10–12

10–11



Re

ve

rse

cu

rre

nt

I R

(

A)

Ca

pa

cita

nce

C

(

pF

)



f = 1MHz

148

RKS151KK, RKS151KJ Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch

Features • Low capacitance. (C = 0.8 pF max) • Low forward resistance. (rf = 0.7 Ω max)


1 2K3

RKS151KJ P, RKS151KJ R

1 2

RKS151KK R

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Package Name : SFP




Package Name : UFP





K3


Item Symbol Value Unit Reverse voltage VR 35 V Power dissipation Pd 150 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C


Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 50 nA VR = 25 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 0.8 pF VR = 6 V, f = 1 MHz Forward resistance rf — — 0.7 Ω IF = 2 mA, f = 100 MHz Note: 1. In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


RKS151KK, RKS151KJ

149


0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50

0.1

1.0

10

10–2

10–3

10–4

10–5

10–8

10–9

10–6

10–7



Ca

pa

cita

nce

C

(p

F)

Fig.4 Forward resistance vs. Forward current

Forward current IF (mA)

Fo

rwa

rd r

esis

tan

ce

r f (Ω

)

10–7

10–8

10–9

10–10

10–13

10–14

10–11

10–12


Reverse voltage VR (V)R

eve

rse

cu

rre

nt

IR

(A

)Forward voltage VF (V)

Fig.1 Forward current vs. Forward voltage

Fo

rwa

rd c

urr

en

t I

F (A

)

0.1

1.0

10

0.1 101.0

f = 100MHz

0.1 10 1001.0

f = 1MHz

150

RKS150KK Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch

Features • Low forward resistance. (rf = 0.7 Ω max)


1 2

RKS150KK R Cathode mark

Mark

1. Cathode

2. Anode

Package Name : SFP



R (8,000 pcs / reel)K2


Item Symbol Value Unit Reverse voltage VR 35 V Power dissipation Pd 150 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C


Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 50 nA VR = 25 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 1.2 pF VR = 6 V, f = 1 MHz Forward resistance rf — — 0.7 Ω IF = 2 mA, f = 100 MHz Note: 1. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,


RKS150KK

151


0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50

1.0 100.1

1.0

10

400

0.5

1.0

1.5

2.0

2.5

10–2

10–3

10–4

10–5

10–8

10–9

10–6

10–7



Ca

pa

cita

nce

C

(p

F)

f = 1MHz


Forward current IF (A)

Fo

rwa

rd r

esis

tan

ce

r f (Ω

)

f = 100MHz

10–6

10–7

10–8

10–9

10–12

10–13

10–10

10–11

10-210-310-4



eve

rse

cu

rre

nt

IR

(A

)Forward voltage VF (V)


Fo

rwa

rd c

urr

en

t I

F (A

)

152

HVD131, HVC131, HVU131 Silicon Epitaxial Planar Pin Diode for Antenna Switching



1 2P1

Package Name : UFP


Package Name : SFP


1 21

HVC131TRF, HVC131KRFHVD131KRF HVU131TRF

Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



1 2P1

Cathode mark

Mark

1. Cathode

2. Anode







Item Symbol Value Unit Peak reverse voltage VRM 65 V Reverse voltage VR 60 V Forward current IF 100 mA Power dissipation Pd 150 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C


Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 0.1 μA VR = 60 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 0.8 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.0 Ω IF = 10 mA, f = 100 MHz Notes: 1. In the SFP, UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVD131, HVC131, HVU131

153


0 0.2 0.4 0.6 0.8 1.0

0.1

10

100101.0

1.0

0 8020 6040 100


Forward voltage VF (V)

Fo

rwa

rd c

urr

en

t

I F (

A)

Ta= 25°C

Ta= 50°C

10–12

10–2

10–4

10–6

10–8

10–10



Ca

pa

cita

nce

C

(p

F)

f = 1MHz



Fo

rwa

rd r

esis

tan

ce

r f (Ω

)

10–7

10–8

10–9

10–10

10–11

10–12

10–13



Re

ve

rse

cu

rre

nt

I R

(

A)

Ta= 25°C

Ta= 50°C

103

102

101

100

10–1

10–5 10–4 10–3 10–2

f = 100MHz

154

HVL145, HVD145, HVC145, HVU145 Silicon Epitaxial Planar Pin Diode for Antenna Switching

Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.45 pF max) • Low forward resistance. (rf = 1.8 Ω max)


1 2T51 24


1 2

HVD145KRF

T5

HVU145TRF

1 2T5

Cathode mark

Mark

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark

1. Cathode

2. Anode


HVL145KRF



Package Name : SFP




Package Name : EFP Package Name : UFP









Value Item Symbol HVL145 HVD145 HVC145 HVU145 Unit

Reverse voltage VR 60 60 60 60 V Forward current IF 50 50 50 50 mA Power dissipation Pd 100 150 150 150 mW Junction temperature Tj 125 125 125 125 °C Storage temperature Tstg –55 to +125 –55 to +125 –55 to +125 –55 to +125 °C


Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 60 V Forward voltage VF — — 0.9 V IF = 2 mA Capacitance C — — 0.45 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.8 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward

and reverse direction 1 pulse. Notes: 1. Failure criterion; IR > 100 nA at VR = 60 V 2. In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting


HVL145, HVD145, HVC145, HVU145

155


100

101

10-1

101.00.1

f = 1MHz

0 0.2 0.4 0.6 0.8 1.0

10-2

10-4

10-6

10-8

10-10

10-12

0 8020 6040 100

10-9

10-7

10-8

10-10

10-11

10-12

10-13

0.1

10

1.0

Ta = 75°C

Ta = 25°C

Ta = –25°C

Ta = 75°C

Ta = 50°C

Ta = 25°CFo

rwa

rd c

urr

en

t I

F (A

)



Ca

pa

cita

nce

C

(p

F)



Fo

rwa

rd r

esis

tan

ce

r f (Ω

)





eve

rse

cu

rre

nt I

R (A

)

10-4 10-3 10-2 10-1

103

102

f = 100MHz

156

HVD132, HVC132 Silicon Epitaxial Planar Pin Diode for Antenna Switching



1 2P2

Package Name : UFP


Package Name : SFPPackage Code: PUSF0002ZB-A

1 22

HVC132TRFHVD132KRF

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark







Item Symbol Value Unit Peak reverse voltage VRM 65 V Reverse voltage VR 60 V Forward current IF 100 mA Power dissipation Pd 150 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C


Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 0.1 μA VR = 60 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 0.5 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 2.0 Ω IF = 10 mA, f = 100 MHz Note: 1. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVD132, HVC132

157


0 0.2 0.4 0.6 0.8 1.0

0.1

10

100101.0

1.0


Ca

pa

cita

nce

C

(p

F)

Ta = -25°C

10-2

10-4

10-6

10-8

10-10

10-12



Fo

rwa

rd c

urr

en

t I

F (A

)

Ta = 25°C

Ta = 75°C

Ta = -25°C

Ta = 25°C

Ta = 75°C

10-10

10-8

10-9

10-11

10-12

10-13

10-7

0 8020 6040 100



eve

rse

cu

rre

nt I

R (A

)

f = 100MHz

100

102

101

10-1

103

10-310-5 10-4 10-2



Fo

rwa

rd r

esis

tan

ce

r f

(Ω)


f = 1MHz

158

HVL142A, HVD142A, HVC142A Silicon Epitaxial Planar Pin Diode for Antenna Switching

Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.3 Ω max)


1 2T6

Package Name : UFP


Package Name : SFP


1 2

HVC142ATRFHVD142AKRF

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark





Package Name : EFP


1 2J

HVL142AKRF

1. Cathode

2. Anode

Cathode mark

Mark



T6



Value Item Symbol HVL142A HVD142A HVC142A Unit

Reverse voltage VR 30 30 30 V Forward current IF 100 100 100 mA Power dissipation Pd 100 150 150 mW Junction temperature Tj 125 125 125 °C Storage temperature Tstg –55 to +125 –55 to +125 –55 to +125 °C



and reverse direction 1 pulse. Notes: 1. Failure criterion; IR > 100 nA at VR = 30 V 2. In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting


HVL142A, HVD142A, HVC142A

159


0 4010 3020 50

10

101.00.1

1.0

f = 1MHz

0 0.2 0.4 0.6 0.8 1.0

10−4 10−3 10−2 10−10.1

f = 100MHz

10−11

10−10

10−9

10−8

10−7

10−13

10−1210−10

10−8

10−6

10−4

10−2

10−12

101

10−1

100

102

103

Fo

rwa

rd r

esis

tan

ce

r

f (Ω

)





Ca

pa

cita

nce

C

(

pF

)

Re

ve

rse

cu

rre

nt I R

(

A)





Fo

rwa

rd c

urr

en

t I F

(

A)

160

HVL144A, HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure improves low capacitance. (C = 0.43 pF max) • Low forward resistance. (rf = 1.8 Ω max) • Low operation current.


Package Name : SFP


1 2

HVD144AKRF

1. Cathode

2. Anode

Cathode mark

Mark



Package Name : SFP


1 2K

HVL144AKRF

1. Cathode

2. Anode

Cathode mark

Mark



T7


Value Item Symbol HVL144A HVD144A

Unit

Reverse voltage VR 30 30 V Forward current IF 100 100 mA Power dissipation Pd 100 150 mW Junction temperature Tj 125 125 °C Storage temperature Tstg –55 to +125 –55 to +125 °C



and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. In the EFP & SFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVL144A, HVD144A

161


10-4 10-3 10-2 10-1

1.0

10

0.1101.00.1

f = 100MHzf = 1MHz

0 0.2 0.4 0.6 0.8 1.0

10-2

10-4

10-6

10-8

10-10

10-12

0 4010 3020 50

10-10

10-8

10-9

10-11

10-12

10-13

10-14

0.1

10

1.0



Fo

rwa

rd c

urr

en

t I

F (A

)



Ca

pa

cita

nce

C

(p

F)



eve

rse

cu

rre

nt I

R (A

)



Fo

rwa

rd r

esis

tan

ce

r f (Ω

)

Ta = 25°C

Ta = 75°C

Ta = 25°C

Ta = 75°C

162

HVL147, HVD147 Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure improves low capacitance. (C = 0.31 pF max) • Low forward resistance. (rf = 1.5 Ω max) • Low operation current.


1 2N 1 2

HVD147KRF

L1

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


HVL147KRF



Package Name : SFP




Package Name : EFP


Value Item Symbol HVL147 HVD147 Unit



Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 30 V Forward voltage VF — — 1.00 V IF = 10 mA Capacitance C — — 0.31 pF VR = 1 V, f = 1 MHz

— 2.5 — IF = 2 mA, f = 100 MHz Forward resistance rf — — 1.5

Ω IF = 10 mA, f = 100 MHz

ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse.

Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. In the EFP,SFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HVL147, HVD147

163


10

100

1.0

0 0.2 0.4 0.6 0.8 1.0

10-2

10-4

10-6

10-8

10-10

10-12

0 4010 3020 50

10-10

10-8

10-9

10-11

10-12

10-13

10-14

0.1

10

1.0



Fo

rwa

rd c

urr

en

t I

F

(A)



Ca

pa

cita

nce

C

(p

F)



eve

rse

cu

rre

nt I

R

(A)



Fo

rwa

rd r

esis

tan

ce

r f

(Ω)

Ta = 25°C

Ta = 75°C

20 104 6 8

f = 1MHz

0.1 1.0 10

f = 100MHz

164

RKP201KL, RKP201KK Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure minimize terminal capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current.


1 24 1 2

RKP201KK R

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


RKP201KL R


R (10,000 pcs / reel)

Package Name : SFP




Package Name : EFP

− 4


Value Item Symbol RKP201KL RKP201KK Unit




and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. In the EFP and SFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


RKP201KL, RKP201KK

165


0.1 1.0 10

1.0

10

0.1101.00.1

f = 100MHzf = 1MHz

0 0.2 0.4 0.6 0.8 1.0

10-2

10-4

10-6

10-8

10-10

10-12

0 4010 3020 50

10-9

10-7

10-8

10-10

10-11

10-12

10-13

0.1

10

1.0



Fo

rwa

rd c

urr

en

t I

F (A

)



Ca

pa

cita

nce

C

(p

F)



eve

rse

cu

rre

nt I

R (A

)



Fo

rwa

rd r

esis

tan

ce

r f (Ω

)

Ta = 25°C

Ta = 75°C

Ta = 25°C

Ta = 75°C

166

RKP200KP Silicon Epitaxial Planar Pin Diode for Antenna Switching

Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.3 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (0.6mm×0.3mm Size leadless type)


Cathode mark

Mark

1 2

1. Cathode

2. Anode7


RKP200KPR


R (10,000 pcs / reel)

Package Name : MP6


Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 100 mA Power dissipation Pd 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 10 mA Reverse current IR — — 100 nA VR = 30 V Capacitance C — — 0.35 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.3 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward

and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package.

RKP200KP

167


0 4010 3020 50

1.00.1

1.0

f = 1MHz

0 0.2 0.4 0.6 0.8 1.0

0.1 1.0 100.1

10−11

10−10

10−9

10−8

10−7

10−13

10−1210−10

10−8

10−6

10−4

10−2

10−12

103

Fo

rwa

rd r

esis

tan

ce

r

f (Ω

)





Ca

pa

cita

nce

C

(

pF

)

Re

ve

rse

cu

rre

nt I R

(

A)





Fo

rwa

rd c

urr

en

t I F

(

A)

f = 100MHz

1010−1

101

100

102

168

RKP204KP Silicon Epitaxial Planar Pin Diode for Antenna Switching

Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.1 Ω max) • Low operation current. • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (0.6mm × 0.3mm Size leadless type)


Cathode mark

Mark

1 2

1. Cathode

2. Anode

S


RKP204KPR


R (10,000 pcs / reel)

Package Name : MP6





and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package.

RKP204KP

169


0 0.2 0.4 0.6 0.8 1.0

10−11

10−10

10−9

10−8

10−7

10−13

10−1210−10

10−8

10−6

10−4

10−2

10−12

Fo

rwa

rd r

esis

tan

ce

r

f

(Ω)





Ca

pa

cita

nce

C

(

pF

)

Re

ve

rse

cu

rre

nt I R

(

A)





Fo

rwa

rd c

urr

en

t

I F

(A

)

0

0.3

0.1

0.2

0.4

0 108642

0.5f = 1MHz

1.00.1

1.0

0.110

10

f = 100MHz

0 4010 3020

170

RKP450KE Ultra small Package Composite Pin Diode for Antenna Switching

Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.3 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (1.63 mm × 0.67 mm Size leadless type) of diode array with four same kind of elements.


1 2 3 4

8 7 6 5

A 1

1 2 3 4

8 7 6 5

RKP200KP Series

Package Name : MP6-8

Package Code : PXSN0008ZA-A

RKP450KER

Mark

No.1 Recognition band

(Top view)


R (10,000 pcs / reel)


Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 100 mA Power dissipation Pd*1 100 mW Power dissipation Pd*2 200 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Per one device. 2. Value at Package total.



and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6-8 package.

RKP450KE

171


0 4010 3020 50

1.00.1

1.0

f = 1MHz

0 0.2 0.4 0.6 0.8 1.0

0.1 1.0 100.1

10−11

10−10

10−9

10−8

10−7

10−13

10−1210−10

10−8

10−6

10−4

10−2

10−12

103

Fo

rwa

rd r

esis

tan

ce

r

f (Ω

)





Ca

pa

cita

nce

C

(

pF

)

Re

ve

rse

cu

rre

nt I R

(

A)





Fo

rwa

rd c

urr

en

t I F

(

A)

f = 100MHz

1010−1

101

100

102

172




Mark


A 2

RKP200KP Series(Top view)

4

5

3

6

2

7

1

8

4

5

3

6

2

7

1

8



RKP451KER


R (10,000 pcs / reel)


Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 100 mA Power dissipation Pd *1 100 mW Power dissipation Pd *2 200 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Per one device. 2. Value at Package total.




RKP451KE

173


0 4010 3020 50

1.0

0 0.2 0.4 0.6 0.8 1.0

0.1 1.0 100.1

10−11

10−10

10−9

10−8

10−7

10−13

10−1210−10

10−8

10−6

10−4

10−2

10−12

Fo

rwa

rd r

esis

tan

ce

r

f

(Ω)





Ca

pa

cita

nce

C

(

pF

)

Re

ve

rse

cu

rre

nt I R

(

A)





Fo

rwa

rd c

urr

en

t

I F

(A

)

100

0

1.0

10

f = 100MHz

20 104 6 8

f = 1MHz

174




Mark


A 3


4

5

3

6

2

7

1

8

4

5

3

6

2

7

1

8



RKP452KER


R (10,000 pcs / reel)






RKP452KE

175


0 4010 3020 50

1.00.1

1.0

0 0.2 0.4 0.6 0.8 1.0

0.1 1.0 100.1

10−11

10−10

10−9

10−8

10−7

10−13

10−1210−10

10−8

10−6

10−4

10−2

10−12

Fo

rwa

rd r

esis

tan

ce

r

f

(Ω)





Ca

pa

cita

nce

C

(

pF

)

Re

ve

rse

cu

rre

nt

I R

(

A)





Fo

rwa

rd c

urr

en

t

I F

(A

)

10

100

0

1.0

10

f = 100MHzf = 1MHz

176




Mark


A 4


4

5

3

6

2

7

1

8

4

5

3

6

2

7

1

8Package Name : MP6-8


RKP453KER


R (10,000 pcs / reel)






RKP453KE

177


0 4010 3020 50

1.0

0.1 1.0 100.1

10−11

10−10

10−9

10−8

10−7

10−13

10−12

Fo

rwa

rd r

esis

tan

ce

r

f

(Ω)





Ca

pa

cita

nce

C

(

pF

)

Re

ve

rse

cu

rre

nt

I R

(

A)





Fo

rwa

rd c

urr

en

t

I F

(A

)

0 0.2 0.4 0.6 0.8 1.0

10−10

10−8

10−6

10−4

10−2

10−12

100

0

1.0

10

f = 100MHz

20

f = 1MHz

104 6 8

178




Mark


A 5


4

5

3

6

2

7

1

8

4

5

3

6

2

7

1

8Package Name : MP6-8


RKP454KER


R (10,000 pcs / reel)






RKP454KE

179


0 4010 3020 50

1.0

0 0.2 0.4 0.6 0.8 1.0

0.1 1.0 100.1

10−11

10−10

10−9

10−8

10−7

10−13

10−1210−10

10−8

10−6

10−4

10−2

10−12

Fo

rwa

rd r

esis

tan

ce

r

f

(Ω)





Ca

pa

cita

nce

C

(

pF

)

Re

ve

rse

cu

rre

nt

I R

(

A)





Fo

rwa

rd c

urr

en

t

I F

(A

)

10

100

0

1.0

10

20 4 6 8

f = 1MHz f = 100MHz

180

HVM14, HVM14S, HVM14SR, HVB14S Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 7.0 Ω max) • Low capacitance. (C = 0.25 pF typ)


2 1

3

HVM14SRHVM14

2 1

3

HVM14S

2 1

3

H5 H6 H7

HVM14TR ,HVM14STR, HVM14SRTR

Package Name : MPAK




(Top view)(Top view)(Top view)

1. NC

2. Anode

3. Cathode

1. Cathode2

2. Anode1

3. Cathode1

Anode2

1. Anode 1

2. Cathode 2

3. Cathode 1

Anode 2

HVB14S

2 1

31. Cathode

2. Anode

3. Cathode

Anode

H6

(Top view)

HVB14STR

Package Name : CMPAK

Package Code: PTSP0003ZB-A



Absolute Maximum Ratings *1 (Ta = 25°C)

Item Symbol Value Unit Reverse voltage VR 50 V Forward current IF 50 mA Power dissipation Pd 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Absolute maximum ratings are described each unit separately.

Electrical Characteristics *1 (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 50 mA Reverse current IR — — 100 nA VR = 50 V Capacitance C — 0.25 — pF VR = 50 V, f = 1 MHz Forward resistance rf — 7.0 Ω IF = 10 mA, f = 100 MHz ESD-Capability *2 — 200 — — V C = 200 pF, Both forward and

reverse direction 1 pulse. Notes: 1. Per one device. 2. Failure criterion; IR ≥ 200 nA at VR = 50 V

HVM14, HVM14S, HVM14SR, HVB14S

181


0 0.2 0.4 0.6 0.8 1.0

10–3

10–5

10–7

10–9

10–11

10–1



Fo

rwa

rd c

urr

en

t

I F

(A

)



Ca

pa

cita

nce

C

(

pF

)

10–5 10–4 10–3 10–2

Fo

rwa

rd r

esis

tan

ce

r f (Ω

)



103

104

1.0

102

10

Re

ve

rse

cu

rre

nt I R

(

A)



f = 100MHz

0 10 4010–12

10–10

10–11

3020 50

10–9

10–8

0.1

10

100101.0

1.0

f = 1MHz

182

HVU187, HVM187S, HVM187WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 5.5 Ω max)


HVU187TRF




1 2D

Cathode mark

Mark

1. Cathode

2. Anode

HVM187S

2 1

3

H3

(Top view)

1. Cathode2

2. Anode1

3. Cathode1

Anode2

HVM187STR ,HVM187WKTR

Package Name : MPAK




HVM187WK

2 1

3

H1

(Top view)

1. Cathode2

2. Anode1

3. Cathode1

Anode2

HVU187


Item Symbol Value Unit Reverse voltage VR 60 V Forward current IF 50 mA Power dissipation Pd*1 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device.


Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 60 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 2.4 pF VR = 0 V, f = 1 MHz Forward resistance rf 3.5 — 5.5 Ω IF = 10 mA, f = 100 MHz ESD-Capability *2 — 200 — — V C = 200 pF, Both forward and

reverse direction 1 pulse. Notes: 1. Per one device. 2. Failure criterion; IR ≥ 100 nA at VR = 60 V

HVU187, HVM187S, HVM187WK

183


0 0.2 0.4 0.6 0.8 1.0 0 8020 6040 100

0.1

10

100101.0

1.0

1.0

10

10–12

10–8

10–10

10–4

10–6

10–210–8

10–9

10–10

10–11

10–12

Re

ve

rse

cu

rre

nt

I R

(

A)

f = 100MHz

10–5 10–4 10–3 10–2

103

104

102

Ca

pa

cita

nce

C

(

pF

)

f = 1MHz





Fo

rwa

rd r

esis

tan

ce

r f (Ω

)





Fo

rwa

rd c

urr

en

t

I F

(A

)

184

RKP300KL, RKP300KK, RKP300KJ Silicon Epitaxial Planar Pin Diode for Wireless LAN

Features • Suitable for an antenna switches of wireless LAN and a cordless telephone. • Super -Low capacitance. (C = 0.25 pF max) • Low forward resistance. (rf = 3.7 Ω max)


1 2L41 20

RKP300KJ P, RKP300KJ R

1 2

RKP300KK R

L4

Cathode mark

Mark

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode

1. Cathode

2. Anode


RKP300KL R


R (10,000 pcs / reel)

Package Name : SFP












Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 30 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 0.25 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 3.7 Ω IF = 10 mA, f = 100 MHz Note: In the EFP,SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting


RKP300KL, RKP300KK, RKP300KJ

185


0 0.2 0.4 0.6 0.8 1.0

10-2

10-4

10-6

10-8

10-10

10-12

0 4010 3020 50

10-10

10-8

10-9

10-11

10-12

10-13

10-14



Fo

rwa

rd c

urr

en

t I

F

(A)



Ca

pa

cita

nce

C

(p

F)



eve

rse

cu

rre

nt I

R

(A)



Fo

rwa

rd r

esis

tan

ce

r f

(Ω)

1.0

0.11.00.1 10010

f = 1MHz

0.1 1.0 10

100

1.0

10

f = 100MHz

186

HVC190 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 3.0 Ω typ)


1 2H9

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : UFP


TRF(4,000 pcs / reel)




Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 50 mA Reverse current IR — — 100 nA VR = 50 V Capacitance C — — 0.35 pF VR = 50 V, f = 1 MHz Forward resistance rf — 3.0 5.0 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 200 — — V C = 200 pF, Both forward and reverse

direction 1 pulse Notes: 1. Failure criterion ; IR ≥ 200 nA at VR = 50 V 2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,


HVC190

187


0 0.2 0.4 0.6 0.8 1.0

10-3

10-5

10-7

10-9

10-11

10-1

0 10 403020 50

1.0

1.00.1

0.1

10-4 10-3 10-2 10-11.0

10

102

103

104

f = 100MHz

0.01100

10

10

f=1MHz

10-7

10-8

10-9

10-10

10-11

10-12

10-13

10-14





Re

ve

rse

cu

rre

nt I R

(

A)




Fo

rwa

rd c

urr

en

t I F

(

A)

Ca

pa

cita

nce

C

(

pF

)


Fo

rwa

rd r

esis

tan

ce

r

f (Ω

)

188

RKP300WKQE Silicon Epitaxial Planar Pin Diode for Antenna Switching

Features • Suitable for an antenna switches of wireless LAN and a cordless telephone. • Super -Low capacitance.(C = 0.25 pF max) • Low forward resistance. (rf = 3.7 Ω max)


2 1

3

P8

(Top view)

RKP300WKQEP




P(3,000 pcs / reel)

(Top view)

1. Anode

2. Anode

3. Cathode

2 1

3


Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 50 mA Power dissipation Pd * 200 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: Per one device 100 mW.


Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 30 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 0.25 pF VR = 20 V, f = 1 MHz Forward resistance rf — — 3.7 Ω IF = 10 mA, f = 100 MHz

RKP300WKQE

189


0 0.2 0.4 0.6 0.8 1.0

10-2

10-4

10-6

10-8

10-10

10-12

0 4010 3020 50

10-10

10-8

10-9

10-11

10-12

10-13

10-14



Fo

rwa

rd c

urr

en

t I

F

(A)



Ca

pa

cita

nce

C

(p

F)



eve

rse

cu

rre

nt I

R

(A)



Fo

rwa

rd r

esis

tan

ce

r f

(Ω)

1.0

0.11.00.1 10010

f = 1MHz

0.1 1.0 10

100

1.0

10

f = 100MHz

190

1S2076 Silicon Epitaxial Planar Diode for High Speed Switching

Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 8.0 ns max)


1 2

Cathode band (Light Blue)

1. Cathode

2. Anode

1S2076TA

Package Name : DO-35Package Code : GRZZ0002ZB-A


TA (5,000 pcs / reel)


Item Symbol Value Unit Peak reverse voltage VRM 35 V Reverse voltage VR 30 V Peak forward current IFM 450 mA Non-Repetitive peak forward surge current IFSM * 1 A Average rectified current IO 150 mA Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Note: Within 1s forward surge current.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF 0.64 — 0.8 V IF = 10 mA Reverse current IR — — 100 nA VR = 30 V Capacitance C — — 3.0 pF VR = 1 V, f = 1 MHz Reverse recovery time trr * — — 8.0 ns IF = IR = 10 mA, Irr = 1 mA Note: Reverse recovery time test circuit

0.1 μF

DCSupply

PulseGenerator

Ro = 50 Ω Rin = 50 ΩSamplingOscilloscope

3 kΩ

Trigger

1S2076

191


Ta =

-25°C

Ta =

25°C

Ta =

125°C

Ta =

75°C Ta = 75°C

Ta = 125°C

Ta = 25°C

0 0.2 0.80.6 1.00.4 1.2

1.0 10

10

1.0

0.1100

f = 1MHz

0 10 30 4020 50

10-1

10-2

10-3

10-4

10-4

10-5

10-6

10-7

10-8

10-9



Fo

rwa

rd c

urr

en

t I F

(

A)

Re

ve

rse

cu

rre

nt I R

(

A)





Ca

pa

cita

nce

C

(

pF

)

192

1S2076A Silicon Epitaxial Planar Diode for High Speed Switching

Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal.


1 2

Cathode band (Navy Blue)

1. Cathode

2. Anode

1S2076ATA





Item Symbol Value Unit Peak reverse voltage VRM 70 V Reverse voltage VR 60 V Peak forward current IFM 450 mA Non-Repetitive peak forward surge current IFSM * 1 A Average rectified current IO 150 mA Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Note: Within 1s forward surge current.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF 0.64 — 0.8 V IF = 10 mA Reverse current IR — — 0.1 μA VR = 30 V Capacitance C — — 3.0 pF VR = 1 V, f = 1 MHz Reverse recovery time trr * — — 8.0 ns IF = IR = 10 mA, Irr = 1 mA Note: Reverse recovery time test circuit

0.1 μF

DCSupply

PulseGenerator


3 kΩ

Trigger

1S2076A

193


Ta =

-25°C

Ta =

25°C

Ta =

125°C

Ta =

75°C Ta = 75°C

Ta = 125°C

Ta = 25°C

0 0.2 0.80.6 1.00.4 1.2

1.0 10

10

1.0

0.1100

f = 1MHz

0 10 30 4020 50

10-1

10-2

10-3

10-4

10-4

10-5

10-6

10-7

10-8

10-9



Fo

rwa

rd c

urr

en

t I F

(

A)

Re

ve

rse

cu

rre

nt I R

(

A)





Ca

pa

cita

nce

C

(

pF

)

194

1SS119 Silicon Epitaxial Planar Diode for High Speed Switching



1 21. Cathode

2. Anode


1SS119TA

Package Name : MHDPackage Code : GRZZ0002ZC-A




Item Symbol Value Unit Peak reverse voltage VRM 35 V Reverse voltage VR 30 V Average rectified current IO 150 mA Peak forward current IFM 450 mA Non-Repetitive peak forward surge current IFSM * 1 A Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Note: Within 1s forward surge current.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.8 V IF = 10 mA Reverse current IR — — 0.1 µA VR = 30 V Capacitance C — — 3.0 pF VR = 1 V, f = 1 MHz Reverse recovery time trr * — — 3.5 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: Reverse recovery time test circuit

0.1 µF

DCSupply

PulseGenerator


3 kΩ

Trigger

1SS119

195


0 0.2 0.80.6 1.00.4 1.2

Ta =

-25°C

Ta =

25°C

Ta =

125°C

Ta =

75°C

0 10 30 4020 50

Ta = 75°C

Ta = 125°C

Ta = 25°C

1.0 10

10

1.0

100

f = 1MHz

10–4

10–3

10–2

10–1

0.1

10–5

10–6

10–4

10–7

10–8

10–9



eve

rse

cu

rre

nt I R

(

A)



Fo

rwa

rd c

urr

en

t I F

(

A)



Ca

pa

cita

nce

C

(

pF

)

196

1SS120 Silicon Epitaxial Planar Diode for High Speed Switching



1 2

1. Cathode

2. Anode


1SS120TA




1


Item Symbol Value Unit Peak reverse voltage VRM 70 V Reverse voltage VR 60 V Average rectified current IO 150 mA Peak forward current IFM 450 mA Non-Repetitive peak forward surge current IFSM * 1 A Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Note: Within 1s forward surge current.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.8 V IF = 10 mA Reverse current IR — — 0.1 µA VR = 60 V Capacitance C — — 3.0 pF VR = 1 V, f = 1 MHz Reverse recovery time trr * — — 3.5 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: Reverse recovery time test circuit

0.1 µF

DCSupply

PulseGenerator


3 kΩ

Trigger

1SS120

197


0 0.2 0.80.6 1.00.4 1.2

Ta =

-25°C

Ta =

25°C

Ta =

125°C

Ta =

75°C

0 20 60 8040 100

Ta = 75°C

Ta = 125°C

Ta = 25°C

1.0 10

10

1.0

100

f = 1MHz

10–4

10–3

10–2

10–1

0.1

10–5

10–6

10–4

10–7

10–8

10–9



eve

rse

cu

rre

nt I R

(

A)



Fo

rwa

rd c

urr

en

t I F

(

A)



Ca

pa

cita

nce

C

(

pF

)

198

HSM123 Silicon Epitaxial Planar Diode for High Speed Switching

Features • Low capacitance, proof against high voltage. • Fast recovery time. (trr = 3.0ns max)


2 1

3

1. Cathode2

2. Anode1

3. Cathode1

Anode2(Top View)

2 1

A9

(Top view)

3HSM123TR, HSM123TL

Package Name : MPAK




TL(3,000 pcs / reel)


Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *2 4 A Average rectified current IO 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Per one device. 2. Within 1 μs forward surge current.


Item Symbol Min Typ Max Unit Test Condition VF — 0.70 1.0 V IF = 10 mA VF — 0.79 1.0 V IF = 50 mA

Forward voltage

VF — 0.85 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — 1.0 4.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω

HSM123

199


0 0.2 0.4 0.6 0.8 1.0 0

0.1

10

100101.0

1.0

f=1MHz

20 8060 10040

10-5

10-6

10-4

10-7

10-8

10-9

10-2

10-3

10-5

10-6

10-7

10-8

10-9



Ca

pa

cita

nce

C

(

pF

)

Re

ve

rse

cu

rre

nt

I R

(

A)



Fig.1 Forward Current vs. Forward Voltage


Fo

rwa

rd c

urr

en

t

I F (

A)

200

HSM124S Silicon Epitaxial Planar Diode for Switching

Features • Low reverse current. (IR = 0.01 μA max)


2 1

3

1. Cathode2

2. Anode1

3. Cathode1

Anode2(Top View)

2 1

A1

(Top view)

3HSM124STR, HSM124STL

Package Name : MPAK








Item Symbol Min Typ Max Unit Test Condition VF — — 1.0 V IF = 10 mA VF — — 1.0 V IF = 50 mA

Forward voltage

VF — — 1.2 V IF = 100 mA Reverse current IR — — 0.01 μA VR = 80 V Capacitance C — — 4.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 100 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device

HSM124S

201


10-5

10-6

10-4

10-7

10-8

10-9

10-2

10-3

10-10

Fo

rwa

rd c

urr

en

t

I F

(A

)

0 0.2 0.4 0.6 0.8 1.0



0.1

10

100101.0

1.0

f=1MHz



Ca

pa

cita

nce

C

(

pF

)

0 20 8060 10040



10-9

10-10

10-11

10-12

10-13

Re

ve

rse

cu

rre

nt

I R

(

A)

10-11

202

HSM221C Silicon Epitaxial Planar Diode for High Speed Switching

Features • Low capacitance, proof against high voltage. • Fast recovery time. (trr = 3.0ns max)


2 1

A2

(Top view)

3HSM221CTR, HSM221CTL

Package Name : MPAK





2 1

3

1. NC

2. Anode

3. Cathode(Top View)


Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *1 4 A Average rectified current IO 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at duration of 1 μs.



Forward voltage


HSM221C

203


f=1MHz

Ta= 7

5°C

Ta= -

25

°C

Ta= 2

5°C

Ta= 75°C

Ta= 25°C

Ta= 50°C

Ta= 0°C

Ta= -25°C

1.0 10

10

1.0

0.1100



Ca

pa

cita

nce

C

(

pF

)

0 0.2 0.4 0.6 0.8 1.0

10-1

10-2

10-3

10-4

10-5

10-6

Fo

rwa

rd c

urr

en

t I F

(

A)



0 20 40 60 80 100

10-4

10-5

10-6

10-7

10-8

10-9

10-10

10-11



eve

rse

cu

rre

nt I R

(

A)

204


Features • Low capacitance, proof against high voltage. • Fast recovery time. (trr = 3.0 ns max)


2 1

A8

(Top view)


Package Name : MPAK





2 1

3

1. NC

2. Cathode

3. Anode(Top View)


Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *1 4 A Average rectified current IO 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at duration of 1 μs.



Forward voltage


HSM223C

205


f=1MHz

Ta= 7

5°C

Ta= -

25

°C

Ta= 2

5°C

Ta= 75°C

Ta= 25°C

Ta= 50°C

Ta= 0°C

Ta= -25°C

1.0 10

10

1.0

0.1100



Ca

pa

cita

nce

C

(

pF

)

0 0.2 0.4 0.6 0.8 1.0

10-1

10-2

10-3

10-4

10-5

10-6

Fo

rwa

rd c

urr

en

t I F

(

A)



0 20 40 60 80 100

10-4

10-5

10-6

10-7

10-8

10-9

10-10

10-11



eve

rse

cu

rre

nt I R

(

A)

206


Features • Fast recovery time. (trr = 20 ns max)


2 1

A4

(Top view)


Package Name : MPAK





1. Cathode

2. Cathode

3. Anode(Top View)

2 1

3





Forward voltage

VF — 0.90 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — 2.5 4.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 20 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device.

HSM2836C

207


0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100

1.0 10

10

1.0

0.1100

10-1

10-2

10-3

10-4

10-5

10-6

10-4

10-5

10-6

10-7

10-8

10-9

10-10

10-11



f=1MHz

Ta= 7

5°C

Ta= -

25

°C

Ta= 2

5°C

Ta= 75°C

Ta= -25°C

Ta= 25°C

Ta= 50°C

Ta= 0°C



Ca

pa

cita

nce

C

(

pF

)

Re

ve

rse

cu

rre

nt

I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)



208


Features • Fast recovery time. (trr = 3.0 ns max)


2 1

3

1. Anode

2. Anode

3. Cathode

(Top View)

2 1

A6

(Top view)


Package Name : MPAK









Forward voltage

VF — 0.97 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — 0.5 2.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device.

HSM2838C

209


f=1MHz

Ta= 7

5°C

Ta= -

25

°C

Ta= 2

5°C

Ta= 75°C

Ta= 25°C

Ta= 50°C

Ta= 0°C

Ta= -25°C

1.0 10

10

1.0

0.1100



Ca

pa

cita

nce

C

(

pF

)

0 0.2 0.4 0.6 0.8 1.0

10-1

10-2

10-3

10-4

10-5

10-6

Fo

rwa

rd c

urr

en

t I F

(

A)



0 20 40 60 80 100

10-4

10-5

10-6

10-7

10-8

10-9

10-10

10-11



eve

rse

cu

rre

nt I R

(

A)

210

HSD119, HSC119, HSU119 Silicon Epitaxial Planar Diode for High Speed Switching

Features • Low capacitance. (C = 2.0 pF max) • Short reverse recovery time. (trr = 3.0 ns max) • Lineup of environmental friendly Halogen free type (HSU119-N)


1 2H1

Package Name : UFP


Package Name : SFP


1 2H1

HSC119TRF, HSC119CKRFHSD119KRF HSU119TRF

HSU119-NTRF(Halogen-free type)

Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



1 2H1

Cathode mark

Mark

1. Cathode

2. Anode







Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *1 4 A Average rectified current IO 100 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Within 1μs forward surge current.


Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.8 V IF = 10 mA Forward voltage VF2 — — 1.2 V IF = 100 mA

Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — — 2.0 pF VR = 0 V, f = 1 MHz Reverse recovery time*1 trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Notes: 1. Reverse recovery time test circuit.

3kΩ0.1μF

Ro = 50Ω Rin = 50Ω

DCSupply

PulseGenerator

SamplingOscilloscope

Trigger 2. In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HSD119, HSC119, HSU119

211


0 0.2 0.80.6 1.00.4

1.0

1.2

Ta =

-25°C

Ta =

25°C

Ta =

75°C

0 20 40 60 80 100

Ta=50°C

Ta=75°C

Ta=25°C

10–2

10–1

10–3

10–4

10–5

10–6

10–8

10–7

10–9

10–10

10–11

1.0

10

1.0

0.1100.1



f = 1MHz



Fo

rwa

rd c

urr

en

t I F

(

A)



Re

ve

rse

cu

rre

nt I R

(

A)

Ca

pa

cita

nce

C

(p

F)

212

HSB123 Silicon Epitaxial Planar Diode for High Speed Switching

Features • Low capacitance, proof against high voltage. • Fast recovery time. (trr = 3.0 ns max)


2 1

3

1. Cathode2

2. Anode1

3. Cathode1

Anode2(Top View)

2 1

A9

(Top view)

3HSB123TR, HSB123TL







Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM *1 300 mA Non-Repetitive peak forward surge current IFSM *2 4 A Average rectified current IO *1 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Two device total. 2. Value at duration of 1 μs, two device total.


Item Symbol Min Typ Max Unit Test Condition VF1 — — 1.0 V IF = 10 mA VF2 — — 1.0 V IF = 50 mA

Forward voltage

VF3 — — 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — — 2.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device.

HSB123

213


0 0.2 0.4 0.6 0.8 1.0 0

0.1

10

100101.0

1.0

f=1MHz

20 8060 10040

10-5

10-6

10-4

10-7

10-8

10-9

10-2

10-3

10-10

10-6

10-7

10-8

10-9

10-10



Ca

pa

cita

nce

C

(

pF

)

Re

ve

rse

cu

rre

nt

I R

(

A)





Fo

rwa

rd c

urr

en

t

I F (

A)

214

HSB124S Silicon Epitaxial Planar Diode for Switching

Features • Low reverse current. (IR = 0.01 μA max)


2 1

3

1. Cathode

2. Anode

3. Cathode

Anode(Top View)

2 1

A1

(Top view)

3HSB124STR, HSB124STL









Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.2 V IF = 100 mA Reverse current IR — — 0.01 μA VR = 80 V Capacitance C — — 4.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 100 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device

HSB124S

215


10-5

10-6

10-4

10-7

10-8

10-9

10-2

10-3

10-10

Fo

rwa

rd c

urr

en

t

I F

(A

)

0 0.2 0.4 0.6 0.8 1.0



0.1

10

100101.0

1.0

f=1MHz



Ca

pa

cita

nce

C

(

pF

)

0 20 8060 10040



10-9

10-10

10-11

10-12

10-13

Re

ve

rse

cu

rre

nt

I R

(

A)

10-11

216


Features • Fast recovery time. (trr = 20 ns max)


2 1

3

1. Cathode

2. Cathode

3. Anode

(Top View)

2 1

A4

(Top view)

3HSB2836TR, HSB2836TL









Item Symbol Min Typ Max Unit Test Condition VF — — 1.0 V IF = 10 mA VF — — 1.0 V IF = 50 mA

Forward voltage

VF — — 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — — 4.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 20 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device.

HSB2836

217


0 0.2 0.4 0.6 0.8 1.0 0

0.1

10

100101.0

1.0

f=1MHz

20 8060 10040

10-5

10-6

10-4

10-7

10-8

10-9

10-2

10-3

10-10

10-6

10-7

10-8

10-9

10-10



Ca

pa

cita

nce

C

(

pF

)

Re

ve

rse

cu

rre

nt

I R

(

A)





Fo

rwa

rd c

urr

en

t

I F (

A)

218


Features • Fast recovery time. (trr = 3.0 ns max).


2 1

3

1. Cathode

2. Cathode

3. Anode

(Top View)

2 1

A6

(Top view)

3HSB2838TR, HSB2838TL










Forward voltage

VF3 — — 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — — 2.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device.

HSB2838

219


f=1MHz

10-6

10-3

10-4

10-2

10-7

10-8

10-5

10-9

10-7

10-8

10-9

10-6

10-1010-10

1.0 10

10

1.0

0.1100



Capacitance C

(

pF

)

Revers

e c

urr

ent I R

(

A)

0 20 8060 10040



0 0.2 0.4 0.6 0.8 1.0



Forw

ard

curr

ent I F

(

A)

220

HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching

Features • High reverse voltage. (VR = 250 V)


Cathode mark

Mark

1 2T

1. Cathode

2. Anode

HSU83TRF


Taping Abbreviation (Quantity)TRF (3,000 pcs / reel)


Item Symbol Value Unit Peak reverse voltage VRM 300 V Reverse voltage VR 250 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *1 2 A Average rectified current IO 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at duration of 10 ms.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.2 V IF = 100 mA

IR1 — — 0.2 VR = 250 V Reverse current IR2 — — 100

μA VR = 300 V

Capacitance C — — 3.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 100 ns IF = IR = 30 mA, Irr = 3 mA

HSU83

221


1.00 0.2 0.4 0.6 0.8 2500 50 200150100

1.0

10

1.0

0.110

f = 1MHz

0.1

10–2

10–4

10–3

10–5

10–6

10–8

10–7

10–9

10–5

10–6

10–8

10–7

10–9



Fo

rwa

rd c

urr

en

t I F

(

A)



Re

ve

rse

cu

rre

nt I R

(

A)



Ca

pa

cita

nce

C

(p

F)

222

RKS101KG Silicon Epitaxial Planar Diode for High Voltage Switching

Features • Short reverse recovery time enable fast switching.


RKS101KGTRF



TRF (3,000 pcs / reel) 1 2H3

Cathode mark

Mark

1. Cathode

2. Anode


Item Symbol Value Unit Peak reverse voltage VRM 420 V Reverse voltage VR 400 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *1 2 A Average rectified current IO *2 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. 10 ms sine wave 1 pulse. 2. See from Fig.4 to Fig.6.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.5 V IF = 100 mA Reverse current IR — — 10 µA VR = 400 V Capacitance C — — 3 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 100 ns IF = IR = 30mA, Irr = 3mA, RL = 50 ΩThermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Note: 1. Polyimide board

Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5

RKS101KG

223




Revers

e c

urr

ent I R

(

A)

Forw

ard

curr

ent I F

(

A)



Capacitance C

(p

F)



0.20 0.4 0.8 1.21.0

10-1

10-2

10-3

10-4

10-5

10-6

10-7

10-8

0.6

Pulse test

5000 100 400300200

10-5

10-6

10-7

10-8

10-9

Ta = 25°C

Ta = 75°C

Ta = 50°C

Pulse test

1.0

1.0

0.1100.1 100

f = 1MHz

Pulse test

Ta = 75°C

Ta = 50°C

Ta = 25°C

RKS101KG

224

Revers

e p

ow

er

dis

sip

ation P

d (

W)

Avera

ge r

ectified c

urr

ent I O

(

A)

Ambient temperature Ta (°C)

Fig.6 Average rectified current vs. Ambient temperature

Fig.5 Reverse power dissipation vs. Reverse voltage


Fig.4 Forward power dissipation vs. Forward current


Forw

ard

pow

er

dis

sip

ation P

d (

W)

0 0.1

D=1/6

D=1/3

DC

0.05

t

T

0AD = —

T

t

Ta = 25°C

0.15

D=1/2

0.2

0.05

0.1

0.15 Sin

0

0.04

0.02

0.06

0.08

00 50 10025 75 125-25

0.1

0.12 VR = 200V

Tj = 150°C

Rth(j-a) = 600°C/W

D=1/3

Sin(θ=180°)

D=1/6

DC

D=1/2

150

0.05

0 100 300

D=1/2

D=2/3

Sin

D=5/6

t

T

0V

D = —T

t

Tj = 150°C

0

0.1

0.15

0.2

200 400 500

225

HSB226S, HSB226WK Silicon Schottky Barrier Diode for High Speed Switching

Features • Low reverse current, Low capacitance.


HSB226S HSB226WK

E7 E6

HSB226STR , HSB226WKTR





(Top view)(Top view)

2 1

3

1. Cathode 2

2. Anode 1

3. Cathode 1

Anode 2

1. Anode

2. Anode

3. Cathode

2 1

3


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 25 V Non-Repetitive peak forward surge current IFSM *1 *2 200 mA Forward current IF *2 50 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. 10 ms sine wave 1 pulse 2. Two device total

Electrical Characteristics * (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.33 IF = 1 mA Forward voltage VF2 — — 0.38

V IF = 5 mA

Reverse current IR — — 450 nA VR = 20 V Capacitance C — — 2.80 pF VR = 1 V, f = 1 MHz Note: Per one device

HSB226S, HSB226WK

226


10

10

1.0

0.10.1 1.0

f = 1MHz

Capacitance C

(

pF

)



1.00 0.4 0.60.2 0.8

10–1

10–7

10–3

10–5

101

10–2

10–8

10–4

10–6

100

Ta = 25°C

Ta = 75°C



Forw

ard

curr

ent I F

(

A)

0 10

10–4

40

10–7

3020

10–5

10–6

10–8

Ta = 25°C

Ta = 75°C


Fig.2 Reverse current vs. Reverse voltageR

evers

e c

urr

ent I R

(

A)

227

HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer

Features • High forward current, Low capacitance. • HSB276AS which is interconnected in series configuration is designed for balanced mixer use.


HSB276AS

E8

HSB276ASTR





(Top view)

1. Cathode 2

2. Anode 1

3. Cathode 1

Anode 2

2 1

3


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 5 V Reverse voltage VR 3 V Average rectified current IO *1 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device


Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3 — — V IR = 1 mA Reverse current IR — — 50 μA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5V Capacitance C — — 0.90 pF VR = 0.5 V, f = 1 MHz Capacitance deviation ΔC — — 0.10 pF VR = 0.5 V, f = 1 MHz ESD-Capability *2 — 30 — — V C = 200 pF, R = 0 Ω, Both forward and

reverse direction 1 pulse. Notes: 1. Per one device 2. Failure criterion ; IR ≥ 100 μA at VR = 0.5 V

HSB276AS

228


0 1.0 5.04.03.02.0

0.1 1.0

10

1.0

0.110

f=1MHz

10–3

10–4

10–2

10–5

10–1

0 0.2 0.4 0.6 0.8 1.010–6

10–5

10–4

10–3

10–2




Forward voltage VF (V) Reverse voltage VR (V)


Revers

e c

urr

ent I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)

Capacitance

C

(

pF

)

Ta = 25°C

Ta = 75°C

Ta = 25°C

Ta = 75°C

229

HSB276S Silicon Schottky Barrier Diode for Balanced Mixer

Features • High forward current, Low capacitance. • HSB276S which is interconnected in series configuration is designed for balanced mixer use.


C2

HSB276STR





(Top view)

1. Cathode 2

2. Anode 1

3. Cathode 1

Anode 2

2 1

3

(Top view)


Item Symbol Value Unit Reverse voltage VR 3 V Average rectified current IO *1 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device


Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3 — — V IR = 1 mA Reverse current IR — — 50 μA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5V Capacitance C — — 0.90 pF VR = 0.5 V, f = 1 MHz Capacitance deviation ΔC — — 0.10 pF VR = 0.5 V, f = 1 MHz ESD-Capability *2 — 30 — — V C = 200 pF, R = 0 Ω, Both forward and


HSB276S

230


0 1.0 5.04.03.02.0

0.1 1.0

10

1.0

0.110

f=1MHz

10–3

10–4

10–2

10–5

10–1

0 0.2 0.4 0.6 0.8 1.010–6

10–5

10–4

10–3

10–2






Revers

e c

urr

ent I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)

Capacitance

C

(

pF

)

231

HSB88AS, HSB88WA, HSB88WK, HSB88YP Silicon Schottky Barrier Diode for High Speed Switching

Features • Low reverse current, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly.


HSB88WAHSB88ASHSB88YP

C1 C7

HSB88ASTR ,HSB88WATR, HSB88WKTR


-4Package Code: PTSP0003ZB-A




HBB88WK

C4

(Top view)

2 1

3

1. Cathode 2

2. Anode 1

3. Cathode 1

Anode 2

1. Cathode

2. Cathode

3. Anode

2 1

3

1. Anode

2. Anode

3 Cathode

2 1

3

21

34

C1

21

34

(Top view)

1. Anode

2. Anode

3. Cathode

4. Cathode

2 1

3

2 1

3

2 1

3

HSB88YPTR

Package Name : CMPAK-4





Item Symbol Value Unit Reverse voltage VR 10 V Average rectified current IO *1 15 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device.


Item Symbol Min Typ Max Unit Test Condition VF1 0.350 — 0.420 IF = 1 mA Forward voltage VF2 0.500 — 0.580

V IF = 10 mA


µA VR = 10 V

Capacitance C — — 0.80 pF VR = 0 V, f = 1 MHz Capacitance deviation ∆C — — 0.10 pF VR = 0 V, f = 1 MHz Forward voltage deviation ∆VF — — 10 mV IF = 10 mA ESD-Capabilityme *2 — 30 — — V C = 200 pF, R = 0 Ω, Both forward

and reverse direction 1 pulse. Notes: 1. Per one device. 2. Failure criterion ; IR > 0.4 µA at VR = 2 V

HSB88AS, HSB88WA, HSB88WK, HSB88YP

232


Re

ve

rse

cu

rre

nt

I R

(

A)

Ca

pa

cita

nce

C

(pF

)F

orw

ard

cu

rre

nt

IF

(A

)

0 0.1 0.2 0.3 0.4 0.5

10-5

10-6

10-4

10-3

10-2



0.6

0.1 1.0

10

1.0

0.1

10

f=1MHz

0 510-9

10-7

10-8

10 15

10-6

10-5





Ta = 25°C

Ta = 75°C

Ta = 75°C

Ta = 25°C

233

HSL226, HSD226, HSC226, HSU226 Silicon Schottky Barrier Diode for High Speed Switching

Features • Low Power consumption (Low reverse leak current) and high speed (Low capacitance). • Lineup of Environmental friendly Halogen free type (HSL226-N) (HSD226-N)


1 2S41 2V

HSC226TRF, HSC226KRF

1 2S4

HSU226TRF

1 2S7

Cathode mark

Mark

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : SFP









Package Name : URP




HSL226KRF

HSL226-NKRF(Halogen-free type)

HSD226KRF

HSD226-NKRF(Halogen-free type)


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 25 V Non-Repetitive Peak forward surge current IFSM * 200 mA Forward current IF 50 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 10 ms Sine Wave 1 pulse



Reverse current IR — — 450 nA VR = 20 V Capacitance C — — 2.80 pF VR = 1 V, f = 1 MHz Note: In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting


HSL226, HSD226, HSC226, HSU226

234


Ta=25°C

Ta=75°C

Pulse test

1.00 0.80.2 0.4 0.6

Ta=25°C

Ta=75°C

0.1

10

100.1

1.0

1.0

0 10 30 4020

10-4

10-6

10-5

10-8

10-7

10-3

10-2

10-1

100

101

10-8

10-7

10-6

10-5

10-4

f=1MHz



Fo

rwa

rd c

urr

en

t I

F (A

)



eve

rse

cu

rre

nt I

R (A

)



Ca

pa

cita

nce

C

(p

F)

235

HSC276, HSU276 Silicon Schottky Barrier Diode for Detector and Mixer

Features • High forward current, Low capacitance.


1 2C2

Package Name : UFP


HSC276TRF, HVC276KRF HSU276TRF

Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode



1 23

Cathode mark

Mark

1. Cathode

2. Anode





Item Symbol Value Unit Reverse voltage VR 3 V Average rectified current IO 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 10 ms Sine Wave 1 pulse


Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3 — — V IR = 1 mA Reverse current IR — — 50 μA VR = 0.5 V Forward current IF 35 — — mA VR = 0.5 V Capacitance C — — 0.85 pF VR = 0.5 V, f = 1 MHz ESD-Capability *1 — 30 — — V C = 200 pF, R = 0 Ω , Both forward

and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 100 μA at VR = 0.5 V 2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,


HSC276, HSU276

236


0 1.0 5.04.03.02.0

0.1 1.0

10

1.0

0.110

f=1MHz

10–3

10–4

10–2

10–5

10–1

0 0.2 0.4 0.6 0.8 1.010–6

10–5

10–4

10–3

10–2






Revers

e c

urr

ent I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)

Capacitance

C

(

pF

)

Ta = 25°C

Ta = 75°C

Ta = 25°C

Ta = 75°C

237

HSD276A, HSC276A, HSU276A Silicon Schottky Barrier Diode for Detector

Features • High forward current, Low capacitance.


1 2S5

Package Name : UFPPackage Code : PWSF0002ZA-A

Package Name : SFPPackage Code: PUSF0002ZB-A

1 2S2

HSC276ATRF, HSC276AKRFHSD276AKRF HSU276ATRF


Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



1 2S5

Cathode mark

Mark

1. Cathode

2. Anode




KRF (8,000 pcs / reel)KRF (8,000 pcs / reel)


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 5 V Reverse voltage VR 3 V Average rectified current IO 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C


Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3.0 — — V IR = 1 mA Reverse current IR — — 50 μA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5 V Capacitance C — — 0.85 pF VR = 0.5 V, f = 1 MHz ESD-Capability *1 — 30 — — V C = 200 pF, R = 0 Ω, Both forward and

reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 μA at VR = 0.5 V 2. In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HSD276A, HSC276A, HSU276A

238

Main Characteristics F

orw

ard

cu

rre

nt

IF

(A

)C

ap

acita

nce

C

(pF

)

10

10

1.0

0.10.1 1.0

1.00 0.4 0.60.2 0.8 0 1.0

10-2

5.04.0

10-5

3.02.0

10-3

10-4

10-6

Re

ve

rse

cu

rre

nt

IR

(A)

10-2

10-5

10-3

10-4

10-1

f=1MHz

Ta = 75°C

Ta = 25°C

Ta = 75°C

Ta = 25°C





Fig.2 Reverse current vs. Reverse voltageFig.1 Forward current vs. Forward voltage

239

HSD278, HSC278 Silicon Schottky Barrier Diode for Detector

Features • Low forward voltage, Low capacitance.


1 2S6


1 2

HSD278KRF

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Package Name : SFP




Package Name : UFP





S1


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V Non-Repetitive peak forward surge current IFSM * 200 mA Peak forward current IFM 150 mA Average rectified current IO 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 10 ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.30 IF = 1 mA Forward voltage

VF2 — — 0.95 V

IF = 30 mA Reverse current IR — — 700 nA VR = 10 V Capacitance C — — 1.5 pF VR = 1 V, f = 1 MHz ESD-Capability *1 — 100 — — V C = 200 pF, RL = 0 Ω, Both forward and

reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 1.4 µA at VR = 10 V. 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HSD278, HSC278

240


Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage


1.0




Fo

rwa

rd c

urr

en

t

I F (

A)

Re

ve

rse

cu

rre

nt

I R

(

A)

Ca

pa

cita

nce

C

(

pF

)

0

0.1

10

100.1

1.0

15 20100 0.80.2 0.4 0.6

101

10-810-8

10-7

10-6

10-5

10-4

10-7

10-6

10-5

10-4

10-3

10-2

10-1

100

1.0

Ta = 25°C

Ta = 25°C

Ta = 75°C

5

f=1MHz

Ta = 75°C

241

RKD750KP, HSL285, HSC285, HSU285 Silicon Schottky Barrier Diode for Detector

Features • Low forward voltage, Low capacitance and High detection sensitivity. • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKD750KP)


1 2C41 21


1

HSU285TRF

1 2S6

Cathode mark

MarkCathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode

Cathode mark

Mark

1. Cathode

2. Anode


HSL285KRF








Package Name : URP




1. Cathode

2. Anode


RKD750KP R


R (10,000 pcs / reel)

Package Name : MP6

1

Cathode mark

Mark

2A


Item Symbol Value Unit Reverse voltage VR 2 V Average rectified current IO 5 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C


Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.15 IF = 0.1 mA Forward voltage VF2 — — 0.27

V IF = 1 mA

Capacitance C — 0.3 — pF VR = 0.5 V, f = 1 MHz ESD-Capability *1 — 10 — — V C = 200 pF, RL = 0 Ω, Both forward

and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package. 3. In the EFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.

Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use

RKD750KP, HSL285, HSC285, HSU285

242


0 0.2 0.40.30.1

10

1.0

0.1



10–3

10–5

10–2

10–4

10–6

0.5

Ca

pa

cita

nce

C

(

pF

)



0.1 1.0 10

Fo

rwa

rd c

urr

en

t I F

(

A)

0 2 431

10–3

10–5

10–2

10–4

10–6

5


eve

rse

cu

rre

nt

I R

(

A)

Ta = 25°C

Ta = 75°C


f = 1MHz

243

HSD88, HSC88, HSU88 Silicon Schottky Barrier Diode for Detector, Mixer

Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage.


1 2S3

Package Name : UFP


Package Name : SFP


1 2S3

HSC88TRF, HSC88KRFHSD88KRF

Package Name : URP


Cathode mark

Mark

1. Cathode

2. Anode

1. Cathode

2. Anode

Cathode mark

Mark



1 29

Cathode mark

Mark

1. Cathode

2. Anode






HSU88TRF


Item Symbol Value Unit Reverse voltage VR 10 V Average rectified current IO 15 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C


Item Symbol Min Typ Max Unit Test Condition VF1 0.350 — 0.420 IF = 1 mA Forward voltage VF2 0.500 — 0.580

V IF = 10 mA


µA VR = 10 V

Capacitance C — — 0.80 pF VR = 0 V, f = 1 MHz ESD-Capability *1 — 30 — — Ω C = 200 pF, Both forward and

reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 0.4 µA at VR = 2 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package.

HSD88, HSC88, HSU88

244

Main Characteristics F

orw

ard

cu

rre

nt

IF

(A)

Ca

pa

cita

nce

C

(pF

)

10

10

1.0

0.1

f=1MHz

0.1 1.0

0 0.4 0.80.60.2

Ta= - 25°C

Ta= 75°C

Ta= 50°C

Ta= 25°C

86 10

Ta= 0°C

Ta= 25°C

Ta= 50°C

Ta= 75°C

0 2 4



Re

ve

rse

cu

rre

nt

I R

(

A)

10-6

10-8

10-10

10-7

10-9

Ta= - 25°CTa= 0°C

10-2

10-4

10-6

10-3

10-5

Forward voltage VR (V)




245

RKD700KL, RKD700KK, RKD700KJ Silicon Schottky Barrier Diode for Backflow prevention

Features • Low reverse current, Low capacitance.


1 2C51 26

RKD700KJ P, RKD700KJ R

1 2S7

Cathode mark

Mark

Cathode mark

Mark

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode

1. Cathode

2. Anode



R (10,000 pcs / reel)

Package Name : SFP









RKD700KK RRKD700KL R


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V Non-Repetitive peak forward surge current IFSM * 200 mA Average rectified current IO 50 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 10 ms Sine wave 1 pulse


Item Symbol Min Typ Max Unit Test Condition VF1 — 0.11 0.14 IF = 1 µA VF2 — — 0.33 IF = 1 mA

Forward voltage

VF3 — — 0.43

V

IF = 10 mA IR1 — — 45 nA VR = 3 V Reverse current IR2 — — 1 µA VR = 30 V

Capacitance C — — 2.8 pF VR = 1 V, f = 1 MHz Note: In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting

plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use..

RKD700KL, RKD700KK, RKD700KJ

246


Ta=25°C

Ta=75°C

Pulse test

1.00 0.80.2 0.4 0.6

0.1

10

100.1

1.0

1.0

0 10 30 4020

Fo

rwa

rd c

urr

en

t I

F (A

)



Ca

pa

cita

nce

C

(p

F)

Re

ve

rse

cu

rre

nt I

R (A

)



10-8

10-7

10-6

10-5

10-4

f=1MHz

10–1

10–3

10–4

10–5

10–8

10–2

10–7

10–6



Ta=75°C

Ta=25°C

247

RKD702KP, RKD702KL Silicon Schottky Barrier Diode for High Speed Switching

Features • Low Power consumption (Low reverse leak current) and high speed (Low capacitance). • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.


H1 1 2

RKD702KLR

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


RKD702KPR


R (10,000 pcs / reel)

Package Name : EFP



R (10,000 pcs / reel)

Package Name : MP6

Cathode mark

Mark

2M

RKD702KL-NR (Halogen-free type)


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Non-Repetitive Peak forward surge current IFSM * 200 mA Forward current IF 50 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 10 ms Sine Wave 1 pulse


Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.35 V IF = 1 mA Forward voltage VF2 — — 0.40 V IF = 5 mA IR1 — — 100 nA VR = 20 V Reverse current IR2 — — 250 nA VR = 30 V

Capacitance C — — 2.50 pF VR = 1 V, f = 1 MHz Note: Please do not use the soldering iron due to avoid high stress to the MP6 package.

RKD702KP, RKD702KL

248


100.1 1.0



Fo

rwa

rd c

urr

en

t I

F (A

)





Ca

pa

cita

nce

C

(p

F)

10-4

10-6

10-5

10-8

10-7

10-3

10-2

10-1

0 0.2 0.4 0.6

Ta=25°C

Ta=75°C

0.1 0.3 0.5

0.1

1.0

10

f = 1MHz

Ta=25°C

Pulse test

0 10 3020

10-8

10-7

10-6

10-5

10-9

Re

ve

rse

cu

rre

nt

IR

(A

)

Ta=75°C

249

RKD703KP, RKD703KL Silicon Schottky Barrier Diode for High Speed Switching

Features • Low Power consumption (Low reverse leak current) and high speed (Low capacitance). • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKD703KP) • We can support the lineup of environmental friendly halogen free type on your demand. (RKD703KL)


N1 1 2

RKD703KLR

Cathode mark

Mark

1. Cathode

2. Anode1. Cathode

2. Anode


RKD703KPR


R (10,000 pcs / reel)

Package Name : EFP



R (10,000 pcs / reel)

Package Name : MP6

Cathode mark

Mark

2X

RKD703KL-NR (Halogen-free type)


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Forward current IF 50 mA Non-Repetitive Peak forward surge current IFSM * 200 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 10 ms Sine Wave 1 pulse



Forward voltage

VF3 — — 0.35 V IF = 20 mA IR1 — — 6 µA VR = 10 V Reverse current IR2 — — 50 µA VR = 30 V

Capacitance C — — 5 pF VR = 1 V, f = 1 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP package, some lead is exposed because the tip of the llead is used as the cutting plane.


RKD703KP, RKD703KL

250




Fo

rwa

rd c

urr

en

t I

F (A

)

Re

ve

rse

cu

rre

nt

IR

(A

)



Ca

pa

cita

nce

C

(p

F)

10-4

10-6

10-5

10-8

10-7

10-3

10-2

10-1

0 0.2 0.4 0.60.1 0.5

100.1 1.00.1

1.0

10

Ta=25°C

Ta=75°C

0.3

Ta=50°C 10-4

10-5

10-6

10-7

10-8



0 10 3020

10-2

10-3

5 15 25

Ta=25°C

Ta=75°C

Ta=50°C

f = 1MHz

Pulse test Pulse test

251

RKD751KP Silicon Schottky Barrier Diode for Detector

Features • High forward current, Low capacitance. • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.


11. Cathode

2. Anode


RKD751KPR


R (10,000 pcs / reel)

Package Name : MP6Cathode mark

Mark

2K


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 5 V Reverse voltage VR 3 V Average rectified current IO 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C


Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3.0 — — V IR = 1 mA Reverse current IR — — 50 μA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5 V Capacitance C — — 1.0 pF VR = 0.5 V, f = 1 MHz ESD-Capability *1 — 30 — — V C = 200 pF, RL = 0 Ω, Both forward

and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 μA at VR = 0.5 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package.

RKD751KP

252


0 1.0 5.04.03.02.0

0.1 1.0

10

1.0

0.110

f=1MHz

10–3

10–4

10–2

10–5

10–1

10–6

10–5

10–4

10–3

10–2






Re

vers

e c

urr

en

t I R

(

A)

Fo

rward

cu

rren

t I F

(

A)

Ca

pa

cita

nce

C

(

pF

)

Ta = 25°C

Ta = 75°C

0.50 0.2 0.30.1 0.4

Ta = 75°C

Ta = 25°C

253

HSM276AS, HSM276ASR Silicon Schottky Barrier Diode for Balanced Mixer

Features • High forward current, Low capacitance. • HSM276AS and HSM276ASR which is interconnected in series configuration is designed for balanced mixer use.


HSM276AS HSM276ASR

S19 S20

HSM276ASTR ,HSM276ASRTR

Package Name : MPAK





2 1

3

1. Cathode 2

2. Anode 1

3. Cathode 1

Anode 2

1. Anode 1

2. Cathode 2

3. Cathode 1

Anode 2

2 1

3


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 5 V Reverse voltage VR 3 V Average rectified current IO *1 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device


Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3.0 — — V IR = 1 mA Reverse current IR — — 50 µA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5V Capacitance C — — 0.90 pF VR = 0.5 V, f = 1 MHz Capacitance deviation ∆C — — 0.10 pF VR = 0.5 V, f = 1 MHz ESD-Capability *2 — 30 — — V C = 200 pF, R = 0 Ω , Both forward and

reverse direction 1 pulse. Notes: 1. Per one device 2. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V

HSM276AS, HSM276ASR

254


0 1.0 5.04.03.02.0

0.1 1.0

10

1.0

0.110

f=1MHz

10–3

10–4

10–2

10–5

10–1

0 0.2 0.4 0.6 0.8 1.010–6

10–5

10–4

10–3

10–2






Revers

e c

urr

ent I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)

Capacitance

C

(

pF

)

Ta = 25°C

Ta = 75°C

Ta = 25°C

Ta = 75°C

255

HSM276S, HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer

Features • High forward current, Low capacitance. • HSM276S and HSM276SR which is interconnected in series configuration is designed for balanced mixer use.


HSM276S HSM276SR

C2 C9

HSM276STR ,HSM276SRTR

Package Name : MPAK





2 1

3

1. Cathode 2

2. Anode 1

3. Cathode 1

Anode 2

1. Anode 1

2. Cathode 2

3. Cathode 1

Anode 2

2 1

3


Item Symbol Value Unit Reverse voltage VR 3 V Average rectified current IO *1 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device


Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3.0 — — V IR = 1 mA Reverse current IR — — 50 μA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5V Capacitance C — — 0.90 pF VR = 0.5 V, f = 1 MHz Capacitance deviation ΔC — — 0.10 pF VR = 0.5 V, f = 1 MHz ESD-Capability *2 — 30 — — V C = 200 pF, R = 0 Ω, Both forward and


HSM276S, HSM276SR

256


0 1.0 5.04.03.02.0

0.1 1.0

10

1.0

0.110

f=1MHz

Ta = 75°C

Ta = 25°C

10–3

10–4

10–2

10–5

10–1

0 0.2 0.4 0.6 0.8 1.010

–6

10–5

10–4

10–3

10–2

Ta = 75°C

Ta = 25°C






Re

ve

rse

cu

rre

nt I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)

Ca

pa

cita

nce

C

(

pF

)

257

HSM88AS, HSM88ASR, HSM88WA, HSM88WK Silicon Schottky Barrier Diode for Balanced Mixer

Features • Proof against high voltage.


HSM88WAHSM88AS HSM88ASR

C1 C3 C7

HSM88ASTR ,HSM88ASRTR, HSM88WATR, HSM88WKTR

Package Name : MPAK




Outline

(Top view)(Top view)(Top view)

HSM88WK

C4

(Top view)

2 1

3

1. Cathode 2

2. Anode 1

3. Cathode 1

Anode 2

1. Anode 1

2. Cathode 2

3. Cathode 1

Anode 22 1

3

1. Cathode

2. Cathode

3. Anode

2 1

3

1. Anode

2. Anode

3 Cathode

2 1

3


Item Symbol Value Unit Reverse voltage VR 10 V Average rectified current IO *1 15 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device.


Item Symbol Min Typ Max Unit Test Condition VF1 0.35 — 0.42 V IF = 1 mA Forward voltage VF2 0.50 — 0.58 V IF = 10 mA IR1 — — 0.2 μA VR = 2 V Reverse current IR2 — — 10 μA VR = 10 V

Capacitance C — — 0.85 pF VR = 0 V, f = 1 MHz Capacitance deviation ΔC — — 0.10 pF VR = 0 V, f = 1 MHz Forward voltage deviation ΔVF — — 10 mV IF = 10 mA ESD-Capability *2 — 30 — — V C = 200 pF, R = 0 Ω, Both forward

and reverse direction 1 pulse. Notes: 1. Per one device 2. Failure criterion ; IR ≥ 0.4 μA at VR = 2 V

HSM88AS, HSM88ASR, HSM88WA, HSM88WK

258


0 0.2 0.4 0.6 0.8 1.0 0 5 10 15

1.0

10

1.0

10

f = 1MHz

10–3

10–4

10–2

10–5

10–7

10–8

10–6

10–9

10–5

10–7

10–8

10–6

10–9

0.10.1



Ca

pa

cita

nce

C

(

pF

)



Re

ve

rse

cu

rre

nt I R

(

A)



Fo

rwa

rd c

urr

en

t I F

(

A)

259

HRB0103A Silicon Schottky Barrier Diode for Low Voltage High Speed Switching, Rectifying

Features • Low forward voltage drop and suitable for high efficiency forward current.


E1

HRB0103ATR





(Top view)

1. NC

2. Anode

3. Cathode

2 1

3

(Top view)

2 1

3


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Average rectified current IO*1 100 mA Non-Repetitive peak forward surge current IFSM *2 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See Fig.5. 2. 10 ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.44 V IF = 100 mA Reverse current IR — — 50 µA VR = 30 V

HRB0103A

260


0 10 20 30 40 500 0.1 0.2 0.3 0.4 0.5

0

0.04

0.02

0.06

0.05

0.03

0.01

0 12040 8020 60 100

0.07D=1/6

Unit: mm

20h×15w×0.8t

0.8

1.5

2.0

3.0

0.08

sin waveD=1/3

D=1/2

DC

0

0.04

0.02

0.06

0.05

0.03

0.01

0 3010 205 15 25

0.07

D=1/2

Unit: mm

20h×15w×0.8t

0.8

1.5

2.0

3.0

0.08

sin wave

D=5/6

D=2/3

DC


Fo

rwa

rd p

ow

er

dis

sip

atio

n

Pd

(W

)

VR is two device total



10–3

10–2

10–5

10–4

10–7

10–6

10–9

10–8

10–3

10–2

10–5

10–4

10–7

10–6



Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)

Fig4. Forward power dissipation vs. Peak reverse voltage

Peak reverse voltage VRM (V)

Fig3. Forward power dissipation vs. Average rectified current

Average rectified current Io (mA)

Re

ve

rse

cu

rre

nt I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)

tp

T

0Io

D =tp

T

tp

T

VR

0

D =tp

T

HRB0103A

261

0 15050 10025 75 1250

80

40

120

100

60

20

DC

D=1/6

D=1/3

sin wave

D=1/2Unit: mm

20hx15wx0.8t

0.8

1.5

1.5

3.0

1.5



tp

T

0Io

D =tp

T

VR = 30VAvera

ge r

ectified c

urr

ent I O

(

mA

)

262

HRB0103B Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying

Features • Low forward voltage drop and suitable for high efficiency forward current.


E2

HRB0103BTR





(Top view)

2 1

3

(Top view)

1. Cathode

2. Anode

3. Cathode

Anode2 1

3


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Average rectified current IO *2 100 mA Non-Repetitive peak forward surge current IFSM *3 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Per one device. 2. See Fig.5, Two device total. 3. 10 ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.44 V IF = 100 mA Reverse current IR — — 50 μA VR = 30 V

HRB0103B

263


0 10 20 30 40 500 0.1 0.2 0.3 0.4 0.5

0

0.04

0.02

0.06

0.05

0.03

0.01

0 12040 8020 60 100

0.07D=1/6

Unit: mm

20h×15w×0.8t

0.8

1.5

2.0

3.0

0.08

sin waveD=1/3

D=1/2

DC

0

0.04

0.02

0.06

0.05

0.03

0.01

0 3010 205 15 25

0.07

D=1/2

Unit: mm

20h×15w×0.8t

0.8

1.5

2.0

3.0

0.08

sin wave

D=5/6

D=2/3

DC


Fo

rwa

rd p

ow

er

dis

sip

atio

n

Pd

(W

)

VR is two device total



10–3

10–2

10–5

10–4

10–7

10–6

10–9

10–8

10–3

10–2

10–5

10–4

10–7

10–6



Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)

Fig4. Forward power dissipation vs. Peak reverse voltage

Peak reverse voltage VRM (V)

Fig3. Forward power dissipation vs. Average rectified current

Average rectified current Io (mA)

Re

ve

rse

cu

rre

nt I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)

tp

T

0Io

D =tp

T

tp

T

VR

0

D =tp

T

HRB0103B

264

0 15050 10025 75 1250

80

40

120

100

60

20

DC

D=1/6

D=1/3

sin wave

D=1/2Unit: mm

20hx15wx0.8t

0.8

1.5

1.5

3.0

1.5



tp

T

0Io

D =tp

T

VR = 30VAvera

ge r

ectified c

urr

ent I O

(

mA

)

Two device total

265

HRB0502A Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high efficiency rectifying.


E3

HRB0502ATR





(Top view)

2 1

3

(Top view)

1.NC

2. Anode

3. Cathode

2 1

3


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 20 V Forward current IF *1 500 mA Non-Repetitive peak forward surge current IFSM *2 5 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6 2. 10 ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.4 V IF = 500 mA Reverse current IR — — 200 μA VR = 20 V Capacitance C — 120 — pF VR = 0 V, f = 1 MHz Thermal resistance Rth(j-a) — 450 — °C/W Polyimide board *1 Note: Polyimide board

0.8

3.0

Unit: mm

1.5

1.5

2.0

20h×15w×0.8t

HRB0502A

266


10

0 0.2 0.4 0.6 0.8 1.0

1.0

Pulse test

0 5 10 15 20 25

Pulse test

10

1.0

100

1.0 4010

10–3

10–2

10–4

10–1

Ta = 25°C

Ta = 75°C

Ta = 25°C

Ta = 75°C



10–3

10–5

10–2

10–4

10–6

Re

ve

rse

cu

rre

nt I R

(

A)

10–1

f = 1MHz

Pulse test



Ca

pa

cita

nce

C

(

pF

)



Fo

rwa

rd c

urr

en

t I F

(

A)

HRB0502A

267

0.2

0.1

0.3

0.4

1.0

0.5

1.5

2.5

2.0

0.2

0.1

0.3

0.4

0

00

00 10 205 15 25

Re

ve

rse

po

we

r d

issip

atio

n

Pd

(W

)

Sin wave

0 50 10025 75 125–25

D=1/6

0.2 0.40.3 0.5

D=1/6

D=1/3

DC

D=1/2

0.1

D=1/2

D=2/3

Sin wave

D=5/6

D=1/2

D=1/3

Sin wave

0.5

0.6



Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)



VR = 3V

Tj = 125°C

Rth(j-a) = 450°C/W



Fo

rwa

rd p

ow

er

dis

sip

atio

n

Pd

(

W)

tp

T

0Io

D = tp

T

Ta = 25°C

tp

T

VR

D =tp

T

0

Tj =125°C

DC

tp

T

0Io

D = —T

tp

268

RKR0202AQE Silicon Schottky Barrier Diode for Rectifying



E9

RKR0202AQEP




P(3,000 pcs / reel)

(Top view)

2 1

3

(Top view)

2 1

3

1. Anode

2. Anode

3. Cathode


Item Symbol Value Unit Repetitive peak reverse voltage VRMM 20 V Average rectified current IO *1 *2 200 mA Non-Repetitive peak forward surge current IFSM *3 2 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Two device total 2. See from Fig.4 to Fig.6 3. 10ms sine wave 1 pulse



Reverse current IR — — 50 μA VR = 20 V Thermal resistance Rth(j-a) — 550 — °C/W Polyimide board *2 Notes: 1. Per one device 2. Polyimide board

0.8

3.0

Unit: mm

1.5

1.5

2.0

20h×15w×0.8t

RKR0202AQE

269


10–3

10–5

10–4

10–6

Revers

e c

urr

ent I R

(

A)

Forw

ard

curr

ent I F

(

A)





Fig3. Capacitance vs. Reverse oltage


Forw

ard

pow

er

dis

sip

ation P

d (

W)

1.0

0 0.2 0.4 0.60.1 0.50.3

10–5

10–4

10–3

10–7

10–6

10–2

10–1

Pulse test

10

100

1.0 100100.1

0 5 10 15 20 25

Pulse test

f = 1MHz

Pulse test

RKR0202AQE

270

0.04

0.02

0.06

0.08

00

00 10 205 15 25

t

T

0V

Tj = 125°C

D = —T

t

Fig5. Reverse power dissipation vs. Reverse voltage


Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)

0.04

0.02

0.06

0.08

00 50 10025 75 125-25

0.10

0.12



Ave

rag

e r

ectifie

d c

urr

en

t I O

(

A)


Fig4. Forward power dissipation vs. Forward current

Fo

rwa

rd p

ow

er

dis

sip

atio

n P

d (

W)

Sin

DC

D=1/6

D=1/3

D=1/2 0.1

0.05

0.15

0.2

D=1/2

D=2/3

Sin

D=5/6

D=1/2

Sin(θ=180°)DC

D=1/3

D=1/6

t

T

0A

Ta = 25°C

D = —T

t

0.05 0.1 0.15

VR=10V

Tj =125°C

Rth(j-a)=550°C/W

Per one device

271

HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching

Features • Can be used for protection of signal-bus lines.


(Top View) (Top View)

21

34

1. Anode

2. Anode

3. Cathode

4. Cathode

E4

21

34HSB0104YPTR, HSB0104YPTL

Package Name : CMPAK- 4






Item Symbol Value Unit Reverse peak reverse voltage VRRM 40 V Forward current IF 100 mA Non-Repetitive peak forward surge current IFSM *2 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Per one device. 2. 10ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.58 V IF = 100 mA Reverse current IR — — 50 µA VR = 40 V Capacitance C — 20 — pF VR = 0 V, f = 1 MHz

HSB0104YP

272


0

1.0

10

100

10

100

10

1.01.0 40

f=1MHz

0 0.2 0.4 0.6 0.8 1.0

1.0

10 20 30 40 50

Pulse testPulse test

10–1

10–3

10–5

10–2

10–4

10–6



Fo

rwa

rd c

urr

en

t I F

(

A)

10–1

10–2

Re

ve

rse

cu

rre

nt I R

(

Am



Ca

pa

cita

nce

C

(

pF

)



273

HRC0103A Silicon Schottky Barrier Diode for Rectifying



1 2S1

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : UFP

HRC0103ATRF, HRC0103AKRF



Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 30 V Average rectified current IO *1 100 mA Non-Repetitive peak forward surge current IFSM *2 3 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — ⎯ 0.44 V IF = 100 mA Reverse current IR — ⎯ 50 μA VR = 30 V Thermal resistance Rth(j-a) — 500 ⎯ °C/W Polyimide board *1 Notes: 1. Polyimide board

Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5

2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,


HRC0103A

274


0 10 20 30 40 500 0.2 0.4 0.6 0.8 1.0

0

0.1

0.4

0.3

0.2

0 3020 40

0.5

Pulse test



10–3

10–2

10–5

10–4

1.0

10–6

10–1

10–2

10–7

10–4

10–3

10–6

10–5



Re

ve

rse

cu

rre

nt I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A) Ta = 75°C

Ta = 25°C

Pulse test

Ta = 75°C

Ta = 25°C

t

T

0V

Tj = 125°C

D=2/3

D=5/6

10

0.6

0.120.080

Revers

e p

ow

er

dis

sip

ation

Pd

(W

)



Forw

ard

pow

er

dis

sip

ation

Pd

(W

)

DC

0.020

0.02

0.06

0.10

D=1/6

0.04

0.08

D=1/2

D = —T

t

D=1/2

sin(θ=180°)



t

T

0A

Ta = 25°C

D = —T

t

0.04 0.06 0.10

sin(θ=180°)D=1/3

HRC0103A

275

0 50 10025 75 1250

0.08

0.04

0.12

0.10

0.06

0.02

Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)



D=1/2

VR=VRRM/2

Tj =125°C

Rth(j-a)=500°C/W

D=1/6

D=1/3

DC

-25

sin(θ=180°)

276

HRC0103C Silicon Schottky Barrier Diode for Rectifying

Features • Low reverse voltage drop and suitable for high efficiency reverse current.


1 2S9

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : UFP

HRC0103CTRF, HRC0103CKRF



Item Symbol Value Unit Peak reverse voltage VRM *1 30 V Reverse voltage VR 30 V Average rectified current IO *1 100 mA Peak forward surge current IFM 300 mA Non-Repetitive peak forward surge current IFSM *2 1 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.40 V IF = 10 mA Forward voltage VF2 — — 0.60 V IF = 100 mA IR1 — — 0.1 VR = 5 V Reverse current IR2 — — 0.2

μA VR = 10 V

Capacitance C — — 8.0 pF VR = 0.5 V, f = 1 MHz Thermal resistance Rth(j-a) — 550 — °C/W Polyimide board *1 Notes: 1. Polyimide board

Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5



HRC0103C

277


0 10 20 30 40 500 0.2 0.4 0.6 0.8 1.0

0

0.005

0.02

0.015

0.01

0 3020 40

0.025

Pulse test

10–3

10–2

10–5

10–4

1.0

10–6

10–1

10–3

10–8

10–5

10–4

10–7

10–6

Re

ve

rse

cu

rre

nt I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)

Ta = 75°C

Ta = 25°C





Pulse test

Ta = 75°C

Ta = 25°C

Ta = 50°C

t

T

0V

Tj = 125°C

sin

10

0.03

0.150.100

Revers

e p

ow

er

dis

sip

ation

Pd

(W

)





Forw

ard

pow

er

dis

sip

ation P

d (

W)

DC

0.050

0.02

0.08

0.12

t

T

0A

Ta = 25°C

0.04

0.06

0.1

D = —T

t

sinD = —

T

t

D = 2/3

D = 5/6

D = 1/6

D = 1/3

D = 1/2

D = 1/2

HRC0103C

278

0 50 10025 75 1250

0.08

0.04

0.12

0.1

0.06

0.02

Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)



D = 1/2

D = 1/6

D = 1/3

DC

−25

sin(θ = 180°)

VR = VRM/2

Tj =125°C

Rth(j-a) = 550°C/W

279

HRC0201A Silicon Schottky Barrier Diode for Rectifying



1 2C3

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : UFP

HRC0201ATRF, HRC0201AKRF



Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 15 V Reverse voltage VR 15 V Average rectified current IO *1 200 mA Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *1 1 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6, with polyimide board. 2. 10 ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.39 V IF = 200 mA Reverse current IR — — 50 μA VR = 6 V Capacitance C — 18 — pF VR = 1 V, f = 1 MHz Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Notes: 1. Polyimide board

Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5



HRC0201A

280


0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20

1.0

10–3

10–2

10–1

10–6

10–5

10–4

10–1

10–4

10–3

10–2

10–6

10–5


Fig.2 Reverse current vs. Reverse voltageFig.1 Forward current vs. Forward voltage


Forw

ard

curr

ent I F

(

A)

Revers

e c

urr

ent I R

(

A)

1001.00.1

Capacitance C

(

pF

)



1.0

100

10

10

f = 1MHzPulse test

0.6

Ta = 75°C

Ta = 25°C

Pulse test

Ta = 75°C

Ta = 25°C

Pulse test

HRC0201A

281

0 50 10025 75 1250

0.20

0.10

0.30

0.25

0.15

0.05Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)

–25

1.0

0.8

0.6

0.4

0.2

30201000

1.2

0.250.200.150

0.100.050

0.05

0.10

0.15

D=1/6

D=1/3

DC

sin(θ=180°)

D=1/2

D=5/6

D=2/3

Fo

rwa

rd p

ow

er

dis

sip

atio

n

Pd

(

W)

Re

ve

rse

po

we

r d

issip

atio

n

Pd

(

W)t

T

0A

D = —T

t

Ta= 25°C

t

T

0V

D = —T

t

Tj = 125°C


Fig.5 Reverse power dissipation vs. Reverse voltage Fig.4 Forward power dissipation vs. Forward current




sin(θ=180°)

1.4

0.30 5 15 25

D=1/2

DC

VR = VRRM/3Tj = 125°CRth(j-a) = 600°C/W

D=1/6

D=1/2

sin(θ=180°)

D=1/3

282

HRC0203B Silicon Schottky Barrier Diode for Rectifying



1 2S2

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : UFP

HRC0203BTRF, HRC0203BKRF



Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 30 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.52 V IF = 200 mA Reverse current IR — — 10 μA VR = 30 V Thermal resistance Rth(j-a) — 500 — °C/W Polyimide board *1 Notes: 1. Polyimide board

Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5

2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HRC0203B

283


0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50

0.5

0.4

0.3

0.2

0.1

403020100

0

0.6

Pulse test

0.250.200.150

0.100.050

0.05

0.10

0.15

0.20

0.25

0.30

10–3

10–2

10–5

10–4

1.0

10–6

10–1

Pulse test

Ta = 75°C

Ta = 25°C

10–3

10–5

10–4

10–7

10–6

10–2

Ta = 75°C

Ta = 25°C

t

T

0V

Tj = 125°C

D = —T

t

Re

ve

rse

po

we

r d

issip

atio

n

Pd

(

W)





Fo

rwa

rd p

ow

er

dis

sip

atio

n P

d (

W) t

T

0A

Ta = 25°C

D = —T

t

D=1/6

D=1/3

sin(θ=180°)

DC

D=1/2

D=5/6

D=2/3

D=1/2

sin(θ=180°)



Fo

rwa

rd c

urr

en

t I F

(

A)



Re

ve

rse

cu

rre

nt I R

(

A)

HRC0203B

284

75 10025 500 125

0.25

0.20

0.15

0.10

0

0.05

DC

Avera

ge r

ectified c

urr

ent I O

(

A)



VR=VRRM/2

Tj =125°C

Rth(j-a)=500°C/W

sin(θ=180°)

D=1/3

D=1/6

D=1/2

-25-50

285

HRC0203C Silicon Schottky Barrier Diode for Rectifying



1 2S8

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : UFP

HRC0203CTRF, HRC0203CKRF



Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 30 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 2 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5, with polyimide board. 2. 10 ms sine wave 1 pulse.



V IF = 200 mA

Reverse current IR — — 30 µA VR = 10 V Thermal resistance Rth(j-a) — 550 — °C/W Polyimide board *1 Note: 1. Polyimide board

Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5



HRC0203C

286


0.5

0.4

0.3

0.2

0.1

403020100

0

0.6

0.250.200.150

0.100.050

0.05

0.10

0.15

0.20

0.25

0.30

0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50

1.0

Ta = 75°C

Ta = 25°C

D=1/6

D=1/3

DC

sin(θ=180°)

D=1/2sin(θ=180°)

D=5/6

D=2/3

D=1/2

Ta = –25°C

Ta = 75°C

Ta = 25°C

Ta = –25°C

10–3

10–2

10–1

10–6

10–5

10–4

10–3

10–6

10–5

10–4

10–8

10–7









Fo

rwa

rd c

urr

en

t I F

(

A)

Fo

rwa

rd p

ow

er

dis

sip

atio

n P

d (

W)

Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)

Re

ve

rse

cu

rre

nt I R

(

A)

t

T

0A

D = —T

t

Ta = 25°C

t

T

0V

D = —T

t

Tj = 125°C


HRC0203C

287

1.0

10

101.00.1

100

f = 1MHzPulse test

0 15050 10025 75 1250

0.20

0.10

0.30

0.25

0.15

0.05


Avera

ge r

ectified c

urr

ent I O

(

A)

Capacitance C

(

pF

)


–25



sin(θ=180°)D=1/6

D=1/3

D=1/2

DC


288

RKR0303AKJ Silicon Schottky Barrier Diode for Rectifying



1 2C6

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : UFP

RKR0303AKJP, RKR0303AKJR



Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V forward current IF *1 0.3 A Non-Repetitive peak forward surge current IFSM *2 1 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6. 2. 10 ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.42 V IF = 300 mA Reverse current IR — — 200 μA VR = 30 V Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Note: 1. Polyimide board

Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5



RKR0303AKJ

289


Re

ve

rse

cu

rre

nt

I R

(

A)

Fo

rwa

rd c

urr

en

t

I F

(A

)



1001.00.11.0

100

10

10

Ca

pa

cita

nce

C

(pF

)



f = 1MHz

Pulse test

0 0.1 0.2 0.3 0.4 0.5

10–3

10–2

10–1

10–6

10–5

10–4

1.0

0.6

Pulse test

0

10–2

10–1

10–5

10–4

10–3

10–6

10 20 305 15 25

Ta = 75°C

Ta = 25°C

Ta = 25°C

Ta = 75°C

Pulse test


Ta = 75°C

RKR0303AKJ

290

Re

ve

rse

po

we

r d

issip

atio

n

Pd

(

W)

Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)F

orw

ard

po

we

r d

issip

atio

n

Pd

(

W)

0.3 0.40.20



0.1

DC

D=1/2

0

0.05

0.1

0.15

D=1/6

t

T

0A

D = —T

t

Ta = 25°C

0.2

0.25

SinD=1/3

0 50 10025 75 1250

0.20

0.10

0.30

0.25

0.15

0.05

–25



DC

sin(θ=180°)

D=1/6

D=1/3

D=1/2

0.35

10

1.2

0.8

2000

0.2

t

T

0V

D = —T

t

Tj = 125°C

D=5/6

D=2/3

D=1/2

sin

4030



0.4

0.6

1.0


291

RKR0303BKJ Silicon Schottky Barrier Diode for Rectifying

Features • Low reverse current drop and suitable for high efficiency rectifying.


1 2C7

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : UFP

RKR0303BKJP, RKR0303BKJR



Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V forward current IF *1 0.3 A Non-Repetitive peak forward surge current IFSM *2 1 A Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. See from Fig.4 to Fig.6. 2. 10 ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.50 V IF = 300 mA Reverse current IR — — 50 µA VR = 30 V Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Note: 1. Polyimide board

Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5



RKR0303BKJ

292


Re

ve

rse

cu

rre

nt

I R

(

A)

Fo

rwa

rd c

urr

en

t

I F

(A

)



1001.00.11.0

100

10

10

Ca

pa

cita

nce

C

(pF

)



f = 1MHz

Pulse test

0 0.1 0.2 0.3 0.4 0.5

10–3

10–2

10–1

10–6

10–5

10–4



1.0

0.610–8

10–7

0.7 0.8

Pulse test

0

10–4

10–3

10–7

10–6

10–5

10–8

10 20 305 15 25

Ta = 75°C

Ta = 25°C

Pulse test

Ta = 75°C

Ta = 25°C

RKR0303BKJ

293

Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)

0.3 0.40.20

Fo

rwa

rd p

ow

er

dis

sip

atio

n

Pd

(

W)



0.1

DC

D=1/2

0

0.05

0.1

0.15

D=1/6

t

T

0A

D = —T

t

Ta = 25°C

Sin

0.2

0.25

D=1/3

10

0.7

0.8

0.6

0.4

2000

0.1

t

T

0V

D = —T

t

Tj = 150°C

D=5/6

D=2/3

D=1/2

sin

4030

Re

ve

rse

po

we

r d

issip

atio

n

Pd

(

W)



0.2

0.3

0.5

0 50 10025 75 1250

0.2

0.1

0.3

0.25

0.15

0.05

–25



DC


sin(θ=180°)D=1/6

D=1/3

D=1/2

0.35

150

294

HRD0103C, HRU0103C Silicon Schottky Barrier Diode for Rectifying

Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Lineup of environmental friendly Halogen free type (HRD0103C-N)


Package Name : SFP


1 2

HRU0103CTRF

Package Name : URP


1. Cathode

2. Anode

Cathode mark

Mark Taping Abbreviation (Quantity)

TRF (3,000 pcs / reel)1 2S8

Cathode mark

Mark

1. Cathode

2. Anode



HRD0103CKRF

HRD0103C-NKRF(Halogen-free type)

S6





µA VR = 10 V


Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5

2. In the SFP package, some lead is exposed because the tip of the llead is used as the cutting plane.


HRD0103C, HRU0103C

295


0 0.2 0.4 0.6 0.8 1.0

0

0.005

0.020

0.015

0.01

0 3020 40

0.025

Pulse test



10–3

10–2

10–5

10–4

1.0

10–6

10–1

10–3

10–8

10–5

10–4

10–7

10–6



Re

ve

rse

cu

rre

nt I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)

Ta = 75°C

Ta = 25°C

Pulse test

10

0.03

0.150.100

Revers

e p

ow

er

dis

sip

ation

Pd

(W

)





Forw

ard

pow

er

dis

sip

ation

Pd

(W

)

0.050

0.02

0.08

0.12

0.04

0.06

0.1

0 5 15 25 3010 20

Ta = 25°C

Ta = 50°C

Ta = 75°C

t

T

0V

Tj = 125°C

sin

D = —T

t

D = 2/3

D = 5/6

D = 1/2DC

sinD = 1/6

D = 1/3

D = 1/2

t

T

0A

Ta = 25°C

D = —T

t

HRD0103C, HRU0103C

296

0 50 10025 75 1250

Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)



−25

0.12

0.1

0.08

0.06

0.04

0.02

D = 1/6

DC

D = 1/2

D = 1/3

sin(θ = 180°)

VR = VRM/2

Tj =125°C

Rth(j-a) = 600°C/W

297

HRD0203C Silicon Schottky Barrier Diode for Rectifying



1 2S5

Cathode mark

Mark

1. Cathode

2. Anode

HRD0203CKRF

Package Name : SFP





Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 30 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 2 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5, with polyimide board. 2. 10 ms sine wave 1 pulse.



V IF = 200 mA

Reverse current IR — — 30 µA VR = 10 V Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Note: 1. Polyimide board

Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5

HRD0203C

298


0.5

0.4

0.3

0.2

0.1

403020100

0

0.6

0.250.200.150

0.100.050

0.05

0.10

0.15

0.20

0.25

0.30

0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50

1.0

Ta = 75°C

Ta = 25°C

D=1/6

D=1/3

DC

sin(θ=180°)

D=1/2sin(θ=180°)

D=5/6

D=2/3

D=1/2

Ta = –25°C

Ta = 75°C

Ta = 25°C

Ta = –25°C

10–3

10–2

10–1

10–6

10–5

10–4

10–3

10–6

10–5

10–4

10–8

10–7









Fo

rwa

rd c

urr

en

t I F

(

A)

Fo

rwa

rd p

ow

er

dis

sip

atio

n P

d (

W)

Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)

Re

ve

rse

cu

rre

nt I R

(

A)

t

T

0A

D = —T

t

Tj = 25°C

t

T

0V

D = —T

t

Tj = 125°C


HRD0203C

299

1.0

10

101.00.1

100

f = 1MHzPulse test

0 15050 10025 75 1250

0.20

0.10

0.30

0.25

0.15

0.05


Avera

ge r

ectified c

urr

ent I O

(

A)

Capacitance C

(

pF

)


25



sin(θ=180°)D=1/6

D=1/3

D=1/2

DC


300

HRL0103C Silicon Schottky Barrier Diode for Rectifying

Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Lineup of environmental friendly Halogen free type (HRL0103C-N)


1 2P

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : EFP

HRL0103CKRF

HRL0103C-NKRF(Halogen-free type)





μA VR = 10 V


Unit: mm

3.0

0.5

1.0

20h×15w×0.8t

0.3

2. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip

part is considered as unquestioned. Please kindly consider soldering nature.

HRL0103C

301


0 0.2 0.4 0.6 0.8 1.0

0

0.005

0.020

0.015

0.010

0 3020 40

0.025

Pulse test



10–3

10–2

10–5

10–4

1.0

10–6

10–1

10–3

10–8

10–5

10–4

10–7

10–6



Re

ve

rse

cu

rre

nt I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)

Ta = 75°C

Ta = 25°C

Pulse test

t

T

0V

Tj = 125°CD=1/3

D=5/6

sin(θ=180°)

10

0.030

0.150.100

Revers

e p

ow

er

dis

sip

ation

Pd

(W

)





Forw

ard

pow

er

dis

sip

ation

Pd

(W

)

DC

0.050

0.02

0.08

0.12

D=1/6

D=1/3

t

T

0A

Tj = 25°C

0.04

0.06

0.10

D=1/2

D = —T

tsin(θ=180°) D = —

T

t

D=1/2

0 5 15 25 3010 20

Ta = 25°C

Ta = 50°C

Ta = 75°C

HRL0103C

302

0 50 10025 75 1250

80

40

120

100

60

20Ave

rag

e r

ectifie

d c

urr

en

t

I O

(m

A)



D=1/2

VR=VRRM/2

Tj =125°C

Rth(j−a)=800°C/W

D=1/6

D=1/3

DC

−25

sin(θ=180°)

303

HRW0202A Silicon Schottky Barrier Diode for Rectifying



1. Anode

2. Anode


2 1

3HRW0202ATR, HRW0202ATL

Package Name : MPAK




TL(3,000 pcs / reel)2 1

S17

(Top view)

3


Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 20 V Average rectified current IO *2 200 mA Non-Repetitive peak forward surge current IFSM *3 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Two device total. 2. See from Fig.4 to Fig.7 3. 10ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.40 V IF = 100 mA Reverse current IR — — 50 μA VR = 20 V Thermal resistance Rth(j-a) — 350 — °C/W Polyimide board *1 Notes: 1. Per one device 2. Polyimide board

0.8

3.0

Unit: mm1.5

1.5

1.5

20h×15w×0.8t

HRW0202A

304


0 0.2 0.4 0.60.1 0.50.3

Ta = 75°C

Ta = 25°C

Pulse test

0 5 10 15 20 25

Pulse test

10

1.0

100

1.0 4010

f = 1MHz

Pulse test

10–3

10–2

10–5

10–4

1.0

10–6

10–1

Ta = 75°C

Ta = 25°C

10–3

10–8

10–5

10–4

10–7

10–6



Fo

rwa

rd c

urr

en

t I F

(

A)



Re

ve

rse

cu

rre

nt I R

(

A)

Fig3. Capacitance vs. Reverse voltage


Ca

pa

cita

nce

C

(p

F)

HRW0202A

305

0.04

0.02

0.06

0.08

0.10

0.05

0.15

0.25

0.20

00

00 10 205 15 250.04 0.080.06 0.10.02

DCDC

t

T

0A

Ta= 25°C

D = —T

t

D=1/6

DC

D=1/3

D=1/2

sin(θ=180°)

t

T

0V

Tj = 125°C

D = —T

t



Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)

D=2/3

D=1/2

sin(θ=180°)

D=5/6

D=1/3

D=1/2

D=1/6

sin(θ=180°)

VR=VRRM/2

Tj =125°C

Rth(j-a)=350°C/W

Two device total

D=1/3

D=1/2

sin(θ=180°)

D=1/6

VR=VRRM/2

Tj =125°C

Rth(j-a)=350°C/W

Per one device

0.04

0.02

0.06

0.08

00 50 10025 75 125-25

0.10

0.12



Ave

rag

e r

ectifie

d c

urr

en

t I O

(

A)

0.10

0.05

0.15

0.25

0.20

00 50 10025 75 125

Ave

rag

e r

ectifie

d c

urr

en

t I O

(

A)



-25



Fo

rwa

rd p

ow

er

dis

sip

atio

n P

d (

W)

306

HRW0202B Silicon Schottky Barrier Diode for Rectifying



1. Anode

2. Anode


2 1

3HRW0202BTR, HRW0202BTL

Package Name : MPAK




TL(3,000 pcs / reel)2 1

S18

(Top view)

3


Item Symbol Value Unit Repetitive peak reverse voltage VRMM *2 20 V Average rectified current IO *2 200 mA Non-Repetitive peak forward surge current IFSM *3 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Two device total. 2. See from Fig.4 to Fig.7 3. 10ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.42 V IF = 100 mA Reverse current IR — — 10 μA VR = 20 V Thermal resistance Rth(j-a) — 400 — °C/W Polyimide board *1 Notes: 1. Per one device 2. Polyimide board

0.8

3.0

Unit: mm1.5

1.5

1.5

20h×15w×0.8t

HRW0202B

307


0 0.2 0.4 0.60.1 0.50.3

Ta = 75°C

Ta = 25°C

Pulse test

0 5 10 15 20 25

Pulse test

10

1.0

100

1.0 4010

f = 1MHz

Pulse test

10–3

10–2

10–5

10–4

1.0

10–6

10–1

Ta = 75°C

Ta = 25°C

10–3

10–8

10–5

10–4

10–7

10–6

Fig3. Capacitance vs. Reverse voltage


Ca

pa

cita

nce

C

(p

F)



Re

ve

rse

cu

rre

nt I R

(

A)



Fo

rwa

rd c

urr

en

t I F

(

A)

HRW0202B

308

0.10

0.05

0.15

0.25

0.20

0.02

0.01

0.03

0.06

0.04

0.04

0.02

0.06

0.08

0

00 10 205 15 25

0 50 10025 75 125-25 0 50 10025 75 125-25

VR=VRRM/2

Tj =125°C

Rth(j-a)=400°C/W

Per one device

0.10

0.12

0

VR=VRRM/2

Tj =125°C

Rth(j-a)=400°C/W

Two device total

0 0.04 0.080.02 0.06 0.10

0.02

0.04

0.08F

orw

ard

po

we

r d

issip

atio

n P

d (

W)



t

T

0A

Ta = 25°C

D = —T

tt

T

0V

Tj = 125°C

D = —T

t



Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)



Ave

rag

e r

ectifie

d c

urr

en

t I O

(

A)

Ave

rag

e r

ectifie

d c

urr

en

t I O

(

A)



D=1/6

DC

D=1/3

D=1/2

sin(θ=180°)

DC

D=1/3

D=1/2

sin(θ=180°)

D=1/6

DC

D=1/3

D=1/2

D=1/6

sin(θ=180°)

0

D=2/3

D=1/2

sin(θ=180°)

D=5/6

0.06

0.05

309




(Top View)

2 1


Package Name : MPAK




TL(3,000 pcs / reel)2 1

S5

(Top view)

3

1. NC

2. Anode

3. Cathode


Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 30 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 2 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.1 to Fig.5, with polyimide board. 2. 50 Hz sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.50 V IF = 200 mA Reverse current IR — — 50 μA VR = 30 V Capacitance C — 40 — pF VR = 0 V, f = 1 MHz

HRW0203A

310


0 0.2 0.4 0.6 0.8

1.0

10–4

10 1001.0

10–3

10–2

0

0.10

0.05

0.15

0 0.200.100.05 0.15

0.20

0

0.20

0.10

0.30

0 3010 205 15 25

0.40

10–2

10–1

10–3

Tj = 25°C

Re

ve

rse

cu

rre

nt I R

(

A)

t

T

0V

Tj = 125°CT

tD = — D=2/3

D=5/6

sin(q=180°)

D=1/2

t

T

0A

Ta = 25°CT

t D=1/6

D=1/3sin(q=180°)

DC

D=1/2

Tj = 125°C

D = —



Fo

rwa

rd c

urr

en

t I F

(

A)





Fo

rwa

rd p

ow

er

dis

sip

atio

n P

d (

W)

Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)



HRW0203A

311

1.0

10

101.00.1

100

f=1MHz

Pulse test

0 15050 10025 75 125

t

T

0A

D = t

T

Unit: mm

20hx15wx0.8t

0.8

1.5

1.5

3.0

1.5

Rth=360°C/W

VR=VRRM/2, Tj =125°C

0

0.20

0.10

0.30

0.25

0.15

0.05A

ve

rag

e r

ectifie

d c

urr

en

t I O

(

A)



D=1/2

D=1/6

D=1/3DC

sin(q=180°)



Ca

pa

cita

nce

C

(p

F)

312

HRW0203B Silicon Schottky Barrier Diode for Rectifying



1. Anode

2.NC


2 1

3HRW0203BTR, HRW0203BTL

Package Name : MPAK




TL(3,000 pcs / reel)2 1

S21

(Top view)

3


Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 30 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.1 to Fig.5, with polyimide board 2. 50 Hz sine wave 1 pulse



HRW0203B

313


010–3

0.2 0.4 0.6 0.8

1.0

10–4

Revers

e c

urr

ent I R

(

A)

Tj = 25°C

10–2

10–1

10 1001.0

10–3

10–2

Tj = 125°C

0

0.10

0.05

0.15

0 0.200.100.05 0.15

0.20

0

0.20

0.10

0.30

0 3010 205 15 25

0.40



Revers

e p

ow

er

dis

sip

ation P

d (

W)



Forw

ard

pow

er

dis

sip

ation P

d (

W)





Forw

ard

curr

ent I F

(

A)

t

T

0A

Ta = 25°C

D = —T

tt

T

0V

Tj = 125°C

D = —T

t

D=5/6

D=2/3

D=1/2

sin(θ=180°)

D=1/6

D=1/3sin(θ=180°)

DC

D=1/2

HRW0203B

314

1.0

10

101.00.1

100

f=1MHz

Pulse test

0 15050 10025 75 1250

0.20

0.10

0.30

0.25

0.15

0.05

DCD=1/6

D=1/3

Ave

rag

e r

ectifie

d c

urr

en

t I O

(

A)



Unit: mm

20h´15w´0.8t

0.8

1.5

1.5

3.0

1.5

Rth=360°C/W

VR=VRRM/2, Tj=125°C

D=1/2



Ca

pa

cita

nce

C

(

pF

)

t

T

0A

D = t

T

sin(θ=180°)

315




1.NC

2. Anode


2 1


Package Name : MPAK




TL(3,000 pcs / reel)2 1

S11

(Top view)

3


Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 20 V Average rectified current IO *1 300 mA Non-Repetitive peak forward surge current IFSM *2 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6. 2. 10ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.40 V IF = 300 mA Reverse current IR — — 100 μA VR = 20 V Capacitance C — — 100 pF VR = 0 V, f = 1 MHz Thermal resistance Rth(j-a) — 340 — °C/W Polyimide board *1 Note: 1. Polyimide board

0.8

3.0

Unit: mm1.5

1.5

1.5

20h×15w×0.8t

HRW0302A

316


0 5 10 15 20 250 0.2 0.4 0.6 0.8 1.0

Pulse test



10–2

10–1

10–4

10–3

10

10–5

1.0

10–1

10–6

10–3

10–2

10–5

10–4



Re

ve

rse

cu

rre

nt I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A) Ta = 75°C

Ta = 25°C

Pulse test

Ta = 75°C

Ta = 25°C

10

1.0

100

1.0 4010

f = 1MHz

Pulse test



Ca

pa

cita

nce

C

(p

F)

HRW0302A

317

0

0.20

0.10

0.30

0.40

0

0.10

0.05

0.15

0

0.25

0

0.20

0.10

0.30

0 10 205 15 25

0.40

0 50 10025 75 125

0.300.10 0.200.15 0.25

0.20

0.05

t

T

0V

Tj = 125°C

D = —T

t

D=2/3

D=5/6

sin(θ=180°)

D=1/2

Revers

e p

ow

er

dis

sip

ation P

d (

W)



DC

D=1/6

D=1/3

D=1/2

sin(θ=180°)



Forw

ard

pow

er

dis

sip

ation P

d (

W)

t

T

0A

Ta = 25°C

D = —T

t

-25

Avera

ge r

ectified c

urr

ent I O

(

A)



D=1/6

D=1/3

sin(θ=180°)

D=1/2

DC

VR=VRRM/2

Tj =125°C

Rth(j-a)=340°C/W

318




1.NC

2. Anode


2 1


Package Name : MPAK




TL(3,000 pcs / reel)2 1

S10

(Top view)

3


Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 20 V Average rectified current IO *1 500 mA Non-Repetitive peak forward surge current IFSM *2 5 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6. 2. 10ms sine wave 1 pulse.



0.8

3.0

Unit: mm1.5

1.5

1.5

20h×15w×0.8t

HRW0502A

319


10

0 0.2 0.4 0.6 0.8 1.0

1.0

Pulse test

0 5 10 15 20 25

Pulse test

10

1.0

100

1.0 4010

10–3

10–2

10–4

10–1

Ta = 25°C

Ta = 75°C

Ta = 25°C

Ta = 75°C



10–3

10–5

10–2

10–4

10–6

Re

ve

rse

cu

rre

nt I R

(

A)

10–1

f = 1MHz

Pulse test



Ca

pa

cita

nce

C

(

pF

)



Fo

rwa

rd c

urr

en

t I F

(

A)

HRW0502A

320

0.2

0.1

0.3

0.4

1.0

0.5

1.5

2.5

2.0

0.2

0.1

0.3

0.4

0

00 0 10 205 15 25

0 50 10025 75 125

0.2 0.40.3 0.50.1

0.5

0.6

t

T

0A

Ta = 25°C

D = —T

tt

T

0V

Tj = 125°C

D = —T

t

D=1/6

D=1/3sin(θ=180°)

DC

D=1/2

D=5/6

D=2/3

D=1/2

sin(θ=180°)



0

Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)

D=1/6

sin(θ=180°)

D=1/2

D=1/3

DC

Ave

rag

e r

ectifie

d c

urr

en

t I O

(

A)



VR=VRRM/2

Tj =125°C

Rth(j-a)=340°C/W

-25



Fo

rwa

rd p

ow

er

dis

sip

atio

n P

d (

W)

321




1.NC

2. Anode


2 1


Package Name : MPAK




TL(3,000 pcs / reel)2 1

S6

(Top view)

3


Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 20 V Average rectified current IO *1 500 mA Non-Repetitive peak forward surge current IFSM *2 5 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.1 to Fig.5, with polyimide board. 2. 50 Hz sine wave 1 pulse.



HRW0503A

322


0 0.2 0.4 0.6 0.8

1.0

0

0.20

0.10

0.30

0 0.50.20.1 0.3

0.40

0

0.20

0.10

0.30

0 3010 205 15 25

0.40

0 5 10 15 20 3025

0.4

t

T

0A

Ta = 25°C

D = —T

t

D=1/6

D=1/3sin(θ=180°)

DC

D=1/2

10–3

10–2

10–1

10–3

10–2

10–1

Tj = 125°C

t

T

0V

Tj = 125°C

D = —T

t

D=5/6

D=2/3

D=1/2

sin(θ=180°)

Tj = 25°C



Forw

ard

curr

ent I F

(

A)



Revers

e c

urr

ent I R

(

A)



Forw

ard

pow

er

dis

sip

ation P

d (

W)



Revers

e p

ow

er

dis

sip

ation P

d (

W)

HRW0503A

323

1.0

10

100.1

100

f=1MHz

Pulse test

50 10025 75 1250

0.4

0.2

0.6

0.5

0.3

0.1

Unit: mm

20h×15w×0.8t

0.8

1.5

1.5

3.0

1.5

Rth=330°C/W

0

1.0

t

T

0A

D = t

T

VR=VRRM/2,

Tj =125°C

D=1/2

DC

sin(θ=180°)

D=1/6

D=1/3



Ave

rag

e r

ectifie

d c

urr

en

t I O

(

A)

-25



Ca

pa

cita

nce

C

(p

F)

324




1.NC

2. Anode


2 1


Package Name : MPAK




TL(3,000 pcs / reel)2 1

S15

(Top view)

3


Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 20 V Forward current IF *1 700 mA Non-Repetitive peak forward current IFM 1.4 A Non-Repetitive peak forward surge current IFSM *2 5 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6. 2. 10ms sine wave 1 pulse.



0.8

3.0

Unit: mm1.5

1.5

1.5

20h×15w×0.8t

HRW0702A

325


10

0 0.2 0.4 0.6 0.8 1.0

1.0

Pulse test

0 5 10 15 20 25

Pulse test

10

1.0

100

1.0 4010

10–3

10–2

10–4

10–1

Ta = 25°C

Ta = 75°C

Ta = 25°C

Ta = 75°C



10–3

10–5

10–2

10–4

10–6

Re

ve

rse

cu

rre

nt I R

(

A)

10–1

f = 1MHz

Pulse test



Ca

pa

cita

nce

C

(

pF

)



Fo

rwa

rd c

urr

en

t I F

(

A)

HRW0702A

326

0.2

0.1

0.3

0.4

0.5

1.0

0.5

1.5

2.5

2.0

0

00 0 10 205 15 250.2 0.40.3 0.50.1

0.6

0.4

0.2

0.6

0.8

0 50 10025 75 125

0.6 0.7

D=1/6

D=1/3

sin(θ=180°)

DC

D=1/2

t

T

0A

Ta= 25°C

D = —T

t D=5/6

D=2/3

D=1/2

sin(θ=180°)



Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)

t

T

0V

Tj = 125°C

D = —T

t

0

-25

Ave

rag

e r

ectifie

d c

urr

en

t I O

(

A)



D=1/6

sin(θ=180°)

D=1/2

D=1/3

DC

VR=VRRM/2

Tj =125°C

Rth(j-a)=340°C/W



Fo

rwa

rd p

ow

er

dis

sip

atio

n P

d (

W)

327




1.NC

2. Anode


2 1


Package Name : MPAK




TL(3,000 pcs / reel)2 1

S8

(Top view)

3


Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 30 V Forward current IF *1 700 mA Non-Repetitive peak forward surge current IFSM *2 5 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.7. 2. 50 Hz sine wave 1 pulse.



Rth1(j-a) — 390 — °C/W Polyimide board *1 Thermal resistance Rth2(j-a) 290 — °C/W Ceramic board *2

Notes: 1. Polyimide board 2. Ceramic board

0.8

3.0

Unit: mm1.5

1.5

1.5

20h×15w×0.8t

4.2

Unit: mm2.0

2.0

20h×15w×0.65t

HRW0703A

328


0 0.2 0.4 0.6 0.8 1.0

10

1.0

Pulse test

0 4010 3020 50

Pulse test

10

1.0

100

1.0 4010

10–2

10–1

Ta = 25°C

Ta = 75°C 10–3

10–5

10–2

10–4

10–6

10–1

Ta = 25°C

Ta = 75°C

f = 1MHz

Pulse test



Fo

rwa

rd c

urr

en

t I F

(

A)



Re

ve

rse

cu

rre

nt I R

(

A)



Ca

pa

cita

nce

C

(

pF

)

HRW0703A

329

0

0.40

0.20

0.60

0.80

DC

0

0.40

0.20

0.60

0 1.00.40.2 0.6

0.80

0

0.8

0.4

1.2

0 3010 205 15 250.8

1.6

0 50 10025 75 125 0 50 10025 75 125

DC

t

T

0A

Ta = 25°C

D = —T

t

sin(θ=180°)

D=1/6

D=1/3

D=1/2

DC



Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)

t

T

0V

Tj = 125°C

D = —T

t

D=5/6

D=2/3

D=1/2

sin(θ=180°)

VR=VRRM/2

Tj =125°C

Ceramic board

D=1/2

D=1/3

sin(θ=180°)

D=1/6

-25

Ave

rag

e r

ectifie

d c

urr

en

t I O

(

A)



VR=VRRM/2

Tj =125°C

Polyimide board

D=1/2

D=1/3

-25

sin(θ=180°)

D=1/6



Fo

rwa

rd p

ow

er

dis

sip

atio

n P

d (

W)



Ave

rag

e r

ectifie

d c

urr

en

t I O

(

A)

0

0.40

0.20

0.60

0.80

330

HRU0103A Silicon Schottky Barrier Diode for Rectifying



HRU0103ATRF

Package Name : URP



TRF (3,000 pcs / reel) 1 2S1

Cathode mark

Mark

1. Cathode

2. Anode


Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 30 V Average rectified current IO *1 100 mA Non-Repetitive peak forward surge current IFSM *2 3 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse.



Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5

HRU0103A

331


0 10 20 30 40 500 0.2 0.4 0.6 0.8 1.0

0

0.01

0.04

0.03

0.02

0 3020 40

0.05

Pulse test



10–3

10–2

10–5

10–4

1.0

10–6

10–1

10–2

10–7

10–4

10–3

10–6

10–5



Re

ve

rse

cu

rre

nt I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A) Ta = 75°C

Ta = 25°C

Pulse test

Ta = 75°C

Ta = 25°C

D=2/3

D=5/6

sin(θ=180°)

10

0.06

0.120.100

Re

ve

rse

po

we

r d

issip

atio

n

Pd

(

W)





Fo

rwa

rd p

ow

er

dis

sip

atio

n

Pd

(

W)

DC

0.080

0.02

0.08

D=1/3

0.04

0.06

0.10

D=1/2

D=1/2

D=1/6

sin(θ=180°)

0.060.040.02

t

T

0A

Ta = 25°C

D = —T

t

t

T

0V

Tj = 125°C

D = —T

t

HRU0103A

332

0 50 10025 75 125

0

0.08

0.04

0.12

0.10

0.06

0.02

Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)



D=1/2

VR=VRRM/2

Tj =125°C

Rth(j-a)=600°C/W

D=1/6

D=1/3

DC

-25

sin(θ=180°)

333




HRU0203ATRF

Package Name : URP



TRF (3,000 pcs / reel) 1 2

Cathode mark

Mark

1. Cathode

2. Anode

Y





Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5

HRU0203A

334


0 10 20 30 40 500 0.2 0.4 0.6 0.8 1.0

0

0.1

0.4

0.3

0.2

0 3020 40

0.5

Pulse test

10–2

10–1

10–4

10–3

10

10–5

1.0

10–2

10–7

10–4

10–3

10–6

10–5



Re

ve

rse

cu

rre

nt I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)

Ta = 75°C

Ta = 25°C



Pulse test

Ta = 75°C

Ta = 25°C

D=2/3

D=5/6

sin(θ=180°)

10

0.6

0.300.250

Re

ve

rse

po

we

r d

issip

atio

n

Pd

(

W)





Fo

rwa

rd p

ow

er

dis

sip

atio

n

Pd

(

W)

DC

0.200

0.04

0.16

D=1/3

0.08

0.12

0.20

D=1/2

D=1/2

D=1/6

sin(θ=180°)

0.150.100.05

t

T

0A

Tj = 25°C

D = —T

t

t

T

0V

Tj = 125°C

D = —T

t

HRU0203A

335

0 50 10025 75 1250

0.20

0.10

0.30

0.25

0.15

0.05

Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)



D=1/2

VR=VRRM/2

Tj =125°C

Rth(j-a)=520°C/W

D=1/6

D=1/3

DC

-25

sin(θ=180°)

336




HRU0302ATRF

Package Name : URP



TRF (3,000 pcs / reel) 1 2Z

Cathode mark

Mark

1. Cathode

2. Anode




Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.40 V IF = 300 mA Reverse current IR — — 100 μA VR = 20 V Capacitance C — 70 — pF VR = 0 V, f = 1 MHz Thermal resistance Rth(j-a) — 440 — °C/W Polyimide board *1 Note: 1. Polyimide board

Unit: mm

3.0

0.8

1.5

20h×15w×0.8t

1.5

HRU0302A

337


0 5 10 15 20 25

Pulse test10–1

10–6

10–3

10–2

10–5

10–4



Re

ve

rse

cu

rre

nt I R

(

A)

Ta = 75°C

Ta = 25°C

10

1.0

100

1.0 4010

f=1MHz

Pulse test

Pulse test

10

10–4

10–1

1.0

10–3

10–2

Fo

rwa

rd c

urr

en

t I F

(

A)



Ca

pa

cita

nce

C

(p

F)



Ta = 75°C

Ta = 25°C

0 0.2 0.4 0.6 0.8 1.0

HRU0302A

338

0

VR=VRRM/2

Tj =125°C

Rth(j-a)=440°C/W

t

T

0A

Tj = 25°C

D = —T

t t

T

0V

Tj = 125°C

D = —T

t

0.300.250

0.200

0.05

0.20

0.10

0.15

0.25

0.150.100.050

0.05

0.20

0.15

0.10

0 2015 255

Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)

10

D=2/3

D=5/6

sin(θ=180°)

D=1/2DC

D=1/3

D=1/2

D=1/6

sin(θ=180°)

0 50 10025 75 125

Ave

rag

e r

ectifie

d c

urr

en

t I O

(

A)



-25

0.10

0.20

0.40

0.30 DC

D=1/3

D=1/2

D=1/6

sin(θ=180°)





Fo

rwa

rd p

ow

er

dis

sip

atio

n P

d (

W)

339

HRV103A Silicon Schottky Barrier Diode for Rectifying



Cathode mark

Mark

1. Cathode

2. Anode

Package Name : TURP

Package Code : PUSF0002ZC-A

HRV103ATRF, HRV103AKRF



KRF (8,000 pcs / reel) S11 2


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V Average rectified current IO *2 1 A Non-Repetitive peak forward surge current IFSM *1 5 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. 10 ms sine wave 1 pulse 2. Ta = 44°C, With Ceramics board (board size: 50 mm × 50 mm, Land size 2 mm × 2 mm)

Short form wave (θ180°C), VR = 10 V.


Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.27 IF = 100 mA VF2 — — 0.36 IF = 700 mA

Forward voltage

VF3 — — 0.42

V

IF = 1 A IR1 — — 100 VR = 5 V Reverse current IR2 — — 1000

μA VR = 30 V

Capacitance C — — 40 pF VR = 10 V, f = 1 MHz — 100 — Ceramics board *1 Thermal resistance Rth(j-a) — 200 —

°C/W Glass epoxy board *2

Notes: 1. Ceramics board 2. Glass epoxy board

1.0

50h × 50w × 0.8t

Unit: mm

2.0

0.3

0.5

2.0

2.0

1.0

50h × 50w × 0.8t

Unit: mm

6.0

0.5

6.0

0.3

2.0

3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.

HRV103A

340


0 10 20 30 400 0.2 0.4 0.6 0.8 1.0

Pulse test



10–3

10–2

10–5

10–4

1.0

10–6

10–1

10–1

10–6

10–3

10–2

10–5

10–4



Re

ve

rse

cu

rre

nt I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A)

Ta = 25°C

Pulse test

Ta = 75°C

Ta = 25°C

1.0

10

101.00.1

100

f=1MHz

Pulse test



Ca

pa

cita

nce

C

(

pF

)

Ta = 75°C

HRV103A

341

0 50 10025 75 1250

0.8

0.4

1.2

1.0

0.6

0.2

Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)



VR=VRRM/3

Tj =125°C

Rth(j−a)=100°C/W

D=1/6

D=1/3

−25

DC

1.50

Re

ve

rse

po

we

r d

issip

atio

n

Pd

(

W)



Fo

rwa

rd p

ow

er

dis

sip

atio

n

Pd

(

W)

DC

1.00

0.1

0.6

D=1/3

0.2

0.5

0.8

D=1/2

sin

0.5

t

T

0A

Ta = 25°C

D = —T

t

0.3

0.4

0.7 D=1/6

5

4

3

2

403020100



0

6

t

T

0V

D = —T

t

Tj = 125°C

D=1/2

7

8

sin

D=5/6

1

D=2/3

D=1/2

sin(θ=180°)

342

HRV103B Silicon Schottky Barrier Diode for Rectifying

Features • Low reverse current and suitable for high efficiency rectifying.


Cathode mark

Mark

1. Cathode

2. Anode

Package Name : TURP

Package Code : PUSF0002ZC-A

HRV103BTRF, HRV103BKRF



KRF (8,000 pcs / reel) S21 2





Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.35 IF = 100 mA VF2 — — 0.45 IF = 700 mA

Forward voltage

VF3 — — 0.50

V

IF = 1 A IR1 — — 10 VR = 5 V Reverse current IR2 — — 100

μA VR = 30 V




1.0

50h × 50w × 0.8t

Unit: mm

2.0

0.3

0.5

2.0

2.0

1.0

50h × 50w × 0.8t

Unit: mm

6.0

0.5

6.0

0.3

2.0


HRV103B

343


0 0.2 0.4 0.6 0.8 1.0

Pulse test

Fo

rwa

rd c

urr

en

t I F

(

A)

Ta = 75°C

Ta = 25°C

10–3

10–2

10–5

10–4

1.0

10–6

10–1

1.0

10

101.00.1

100

f=1MHz

Pulse test



Ca

pa

cita

nce

C

(

pF

)

0 10 20 30 40

Re

ve

rse

cu

rre

nt I R

(

A)

Pulse test

Ta = 25°C

Ta = 75°C

10–3

10–5

10–4

10–7

10–6

10–2





HRV103B

344

75 10025 500 125

1.2

1.0

0.8

0.6

0

0.4

0.2

–25

D=1/2

D=1/6

Sin(θ=180°)

D=1/3

DC

Ave

rag

e r

ectifie

d c

urr

en

t

I O (

A)



150

Fo

rwa

rd p

ow

er

dis

sip

atio

n P

d (

W)



1.51.00

0.50

0.1

0.4

0.6

0.8

0.7 t

T

0A

D = —T

t

Ta= 25°C

D=1/6

D=1/3

D=1/2

0.2

0.3

0.5

Sin

DC

3.0

2.5

1.5

1.0

0.5

403020100

0

4.0

D=1/2

D=2/3

D=5/6

2.0

3.5 t

T

0V

Tj = 150°C

D = —T

t



Re

ve

rse

po

we

r d

issip

atio

n P

d (

W)


Sin

345

RKR0503AKH Silicon Schottky Barrier Diode for Rectifying



1. Cathode

2. Anode

Package Name : TURPPackage Code : PUSF0002ZC-A

RKR0503AKHP, RKR0503AKHR


P (4,000 pcs / reel)R (8,000 pcs / reel)

Cathode mark

Mark

S81 2


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V Average rectified current IO *1 *2 0.5 A Non-Repetitive peak forward surge current IFSM *3 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 62°C, With Glass epoxy board (board size: 50 mm × 50 mm, Land size 6 mm × 6 mm)

Short form wave (θ180°C), VR = 10 V. 3. 10 ms sine wave 1 pulse.


Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.37 V IF = 500 mA Reverse current IR — — 500 μA VR = 30 V Thermal resistance Rth(j-a) — 200 — °C/W Glass epoxy board *1 Notes: 1. Glass epoxy board

1.0

50h×50w×0.8t

Unit: mm

6.0

0.5

6.0

0.3

2.0


RKR0503AKH

346


1.0

10–1

Pulse test

10–4

10–3

10–5

10–2

Ta = 25°C

Ta = 75°C

Re

ve

rse

cu

rre

nt I R

(

A)

Ca

pa

cita

nce

C

(

pF

)



Fo

rwa

rd c

urr

en

t I F

(

A)

0 0.1 0.2 0.3 0.4 0.5

10

1.0

100

101.00.1 100



1000f = 1MHz

Pulse test



10–1

10–4

10–3

10–5

10–2

10–6

0 5 10 15 20 25 30

Ta = 25°C

Ta = 75°C

Pulse test

RKR0503AKH

347

Re

ve

rse

po

we

r d

issip

atio

n

Pd

(

W)

Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)



Fo

rwa

rd p

ow

er

dis

sip

atio

n

Pd

(

W)





0 0.2 0.40.3 0.5

D=1/6

D=1/3

DC

0.1

t

T

0A

D = —T

t

Ta = 25°C

0.6

D=1/2

0.35

0.4

0.3

0.2

0

0.05

0.1

0.15

0.25 Sin

0.2

0.1

0.3

0.4

00 50 10025 75 125-25

0.5

0.6 VR = 10V

Tj = 125°C

Rth(j-a) = 200°C/W

D=1/3

Sin(θ=180°)D=1/6

DC

D=1/2

0.5

1

0 10 30

D=1/2

D=2/3

Sin

D=5/6

t

T

0V

D = —T

t

Tj = 125°C

0

1.5

2

2.5

20 40

348

RKR0503BKH Silicon Schottky Barrier Diode for Rectifying

Features • Low reverse current drop and suitable for high efficiency rectifying.


1. Cathode

2. Anode


RKR0503BKHP, RKR0503BKHR


P (4,000 pcs / reel)R (8,000 pcs / reel)

Cathode mark

Mark

S91 2






Reverse current IR — — 100 μA VR = 30 V Thermal resistance Rth(j-a) — 200 — °C/W Glass epoxy board *1 Notes: 1. Glass epoxy board

1.0

50h×50w×0.8t

Unit: mm

6.0

0.5

6.0

0.3

2.0


RKR0503BKH

349


1.0

10–1

10–4

10–3

10–5

10–2



Revers

e c

urr

ent I R

(

A)



Capacitance C

(

pF

)



Forw

ard

curr

ent I F

(

A)

0 0.1 0.2 0.3 0.4 0.5

Ta = 25°C

Ta = 75°C

10

1.0

100

101.00.1

1000

Pulse test

10–4

10–3

10–5

10–2

10–6

0 5 10 15 20 25 30

Ta = 25°C

Ta = 75°C

10–1

Pulse test

f = 1MHz

Pulse test

100

RKR0503BKH

350

Re

ve

rse

po

we

r d

issip

atio

n

Pd

(

W)

Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)



Fo

rwa

rd p

ow

er

dis

sip

atio

n

Pd

(

W)

0 0.2 0.40.3 0.5

DC

0.1

t

T

0A

D = —T

t

Ta = 25°C

0.6



0.2

0.1

0.3

0.4

00 50 10025 75 125

VR = VRRM/2

Tj = 150°C

Rth(j-a) = 200°C/W0.5

0.6

150-25

D=1/6

D=1/2

D=1/3

Sin(θ=180°)

0.35

0.4

0.3

0.2

0

0.05

0.1

0.15

0.25

Sin

D=1/6

D=1/3

D=1/2

DC

0.5

1

0 10 30

D=1/2

D=2/3

D=5/6

t

T

0V

D = —T

t

Tj = 150°C

0

1.5

2

2.5



20 40

Sin

351

RKR0505AKH Silicon Schottky Barrier Diode for Rectifying



1. Cathode

2. Anode


RKR0505AKHP, RKR0505AKHR


P(4,000 pcs / reel)R (8,000 pcs / reel)

Cathode mark

Mark

S61 2






V IF = 500 mA

IR1 — — 200 VR = 10 V Reverse current IR2 — — 400

μA VR = 20 V




1.0

50h×50w×0.8t

Unit: mm

2.0

0.3

0.5

2.0

2.0

1.0

50h×50w×0.8t

Unit: mm

6.0

0.5

6.0

0.3

2.0


RKR0505AKH

352


1.0

10–1


10

1.0

100

10–4

10–3

10–5

10–2

Ta = 25°C

Ta = 75°C



Re

ve

rse

cu

rre

nt I R

(

A)



Ca

pa

cita

nce

C

(

pF

)



Fo

rwa

rd c

urr

en

t I F

(

A)

0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20

101.00.1 100

f = 1MHz

Pulse test

10–1

10–4

10–3

10–5

10–2

10–6

Ta = 75°C

Ta = 25°C

RKR0505AKH

353



Revers

e p

ow

er

dis

sip

ation

Pd

(W

)

Avera

ge r

ectified c

urr

ent I O

(

A)





Forw

ard

pow

er

dis

sip

ation

Pd

(W

)

0.2

0.1

0.3

0.4

00

Sin

0.2 0.40.3 0.5

D=1/6

D=1/3

DC

0.1

t

T

0A

D = —T

t

Ta= 25°C

0.5

0.6

D=1/2

2

4

0 20 4010 30 50

D=1/2

D=2/3

Sin

D=5/6

t

T

0V

D = —T

t

Tj = 125°C

0

6

8

10

60

0.2

0.1

0.3

0.4

00 50 10025 75 125-25

0.5

0.6 VR = 10V

Tj = 125°C

Rth(j-a) = 200°C/W

DC

D=1/2

D=1/3

Sin(θ=180°)D=1/6

354




1. Cathode

2. Anode





Cathode mark

Mark

S71 2





Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.60 V IF = 500 mA


μA VR = 30 V




1.0

50h×50w×0.8t

Unit: mm

2.0

0.3

0.5

2.0

2.0

1.0

50h×50w×0.8t

Unit: mm

6.0

0.5

6.0

0.3

2.0


RKR0505BKH

355


1.0

10–1


10

1.0

100

10–4

10–3

10–5

10–2

Ta = 75°C



Revers

e c

urr

ent I R

(

A)



Capacitance C

(

pF

)



Forw

ard

curr

ent I F

(

A)

0 10 20 30 50

101.00.1 100

f = 1MHz

Pulse test

10–2

10–5

10–4

10–6

10–3

10–7

Ta = 25°C

40

Ta = 25°C

0 0.1 0.2 0.3 0.4 0.5 0.6

Ta = 75°C

RKR0505BKH

356



Revers

e p

ow

er

dis

sip

ation

Pd

(W

)

Avera

ge r

ectified c

urr

ent I O

(

A)





Forw

ard

pow

er

dis

sip

ation

Pd

(W

)

0.2

0.1

0.3

0.4

00

Sin

0.2 0.40.3 0.5

D=1/6D=1/3

DC

D=1/2

0.1

t

T

0A

D = —T

t

Ta = 25°C

0.5

0.6

0.2

0.1

0.3

0.4

00 50 10025 75 125

VR = VRRM/2

Tj = 150°C

Rth(j-a) = 200°C/W0.5

0.6

150-25

D=1/6

DC

D=1/2

D=1/3

Sin(θ=180°)

1.0

0.5

1.5

2.0

0 20 4010 30 50

Sin

t

T

0V

D = —T

t

Tj = 150°C

060

D=2/3

D=1/2

D=5/6

357




1. Cathode

2. Anode





Cathode mark

Mark

S51 2






V IF = 700 mA


μA VR = 30 V




1.0

50h×50w×0.8t

Unit: mm

2.0

0.3

0.5

2.0

2.0

1.0

50h×50w×0.8t

Unit: mm

6.0

0.5

6.0

0.3

2.0


RKR0703BKH

358


0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40

Pulse test



Fo

rwa

rd c

urr

en

t I F

(

A)

Re

ve

rse

cu

rre

nt I R

(

A)



1.0

10

101.00.1

100



Ca

pa

cita

nce

C

(

pF

)

Ta = 75°C

Ta = 25°C

Ta = 25°C

Ta = 75°C

10–3

10–2

10–5

10–4

1.0

10–6

10–1

10–3

10–5

10–4

10–7

10–6

10–2

100

f=1MHz

Pulse test

Pulse test

RKR0703BKH

359

Fo

rwa

rd p

ow

er

dis

sip

atio

n

Pd

(

W)

Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)



Re

ve

rse

po

we

r d

issip

atio

n

Pd

(

W)

0.70.20

0.10

0.1

0.4

0.6

0.2

0.3

0.5

DC



0.5 0.60.3 0.4

t

T

0A

D = —T

t

Ta = 25°C

0.8

D=1/6

D=1/2

sinD=1/3

0.5

0.4

0.3

0.2

0.1

403020100

0.6

t

T

0V

D = —T

t

Tj = 150°C

0.7

0.8

0

75 10025 500 125

0.7

0.8

0.6

0

0.4

0.1

–25 150



0.2

0.3

0.5

DC

VR = VRRM/2

Tj = 150°C

Rth(j-a) = 200°C/W

D=1/6

D=1/3

D=1/2

Sin(θ=180°)

D=1/2

sin

D=2/3

D=5/6

360




1. Cathode

2. Anode





Cathode mark

Mark

S41 2






V IF = 700 mA


μA VR = 40 V




1.0

50h × 50w × 0.8t

Unit: mm

2.0

0.3

0.5

2.0

2.0

1.0

50h × 50w × 0.8t

Unit: mm

6.0

0.5

6.0

0.3

2.0


RKR104BKH

361


0 10 20 30 400 0.2 0.4 0.6 0.8 1.0

Pulse test



10–3

10–2

10–5

10–4

1.0

10–6

10–1

10–2

10–7

10–4

10–3

10–6

10–5



Re

ve

rse

cu

rre

nt I R

(

A)

Fo

rwa

rd c

urr

en

t I F

(

A) Ta = 25°C

Pulse test

1.0

10

101.00.1

100

f=1MHz

Pulse test



Ca

pa

cita

nce

C

(

pF

)

Ta = 75°C

Ta = 75°C

Ta = 25°C

RKR104BKH

362

0 50 10025 75 1250

0.8

0.4

1.2

1.0

0.6

0.2

Ave

rag

e r

ectifie

d c

urr

en

t

I O

(A

)



−25

DC

1.50

Re

ve

rse

po

we

r d

issip

atio

n

Pd

(

W)



Fo

rwa

rd p

ow

er

dis

sip

atio

n

Pd

(

W)

1.00

D=1/3D=1/2

sin

0.5

t

T

0A

Ta = 25°C

D = —T

t

D=1/6

403020100



0

t

T

0V

D = —T

t

Tj = 150°C

D=2/3

D=1/2

sin

0.4

0.6

0.8

0.2

1.0

1.2

DC

2.5

2.0

1.5

1.0

0.5

3.0

3.5

4.0

D=5/6

50

150


D=1/3

sin(θ=180°)

D=1/2

D=1/6

363

HSM107S Silicon Schottky Barrier Diode for System Protection

Features • Low VF and high efficiency. • HSM107S which is interconnected in series configuration is designed for protection from not only external

excessive voltage but also miss-operation on electric systems


2 1

C5

(Top view) (Top view)


Package Name : MPAK





2 1

3

1. Cathode 2

2. Anode 1

3. Cathode 1

Anode 2


Item Symbol Value Unit Reverse voltage VR 8 V Peak forward current IFM 0.1 A Non-Repetitive peak forward surge current IFSM *1 0.5 A Average rectified current IO *2 50 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Rectangular wave, 10 ms. 2. Per one device.


Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 8 — — V IR = 1.0 mA Reverse current IR — — 30 μA VR = 5 V Forward voltage VF — — 0.3 V IF = 10 mA ESD Capability *2 — 100 — — V C = 200 pF, Both forward

and reverse direction 1 pulse Notes: 1. Per one device. 2. Failure Criterion ; IR ≥ 60 μA at VR = 5 V.

HSM107S

364


0 0.1 0.2 0.3 0.4 0.5 0 2 10864

10

1.0

1.0 4010

f = 1MHz

10–3

10–5

10–2

10–4

10–6

10–1

0.1

10–3

10–5

10–2

10–4

10–610–7



Fo

rwa

rd c

urr

en

t I F

(

A)



Re

ve

rse

cu

rre

nt I R

(

A)



Ca

pa

cita

nce

C

(

pF

)

365

HSM126S Silicon Schottky Barrier Diode for System Protection

Features • HSM126S which is connected in series configuration enable to protect electric systems from miss-operation against

external + and – surge. • Low VF and low leakage current.


2 1

S14

(Top view) (Top view)


Package Name : MPAK





2 1

3

1. Cathode 2

2. Anode 1

3. Cathode 1

Anode 2


Item Symbol Value Unit Repetitive peak reverse voltage VRRM 20 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 2 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Sine wave, Two device total. 2. 50 Hz half sine wave 1 pulse. 3. Per one device.


Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 2.0 μA VR = 5 V Forward voltage VF — — 0.35 V IF = 10 mA Capacitance C — 40 — pF VR = 0 V, f = 1 MHz Note: 1. Per one device.

HSM126S

366


0 5 10 15 20 25 30

Pulse test

1.0

10

101.00.1

100

0 0.2 0.4 0.6 0.8 1.0

Pulse test10

1.0

10–3

10–2

10–4

10–1

10–5

Ta = 25°C

Ta = 75°C

10–3

10–5

10–2

10–4

10–6

10–7

Ta = 25°C

Ta = 75°C

f = 1MHz

Pulse test



Fo

rwa

rd c

urr

en

t I F

(

A)



Re

ve

rse

cu

rre

nt I R

(

A)

Ca

pa

cita

nce

C

(

pF

)



367

RKZ-KP Series Silicon Planar Zener Diode for Surge Absorption

Features • High ESD-Capability 30 kV, human body model (IEC61000-4-2). • Wide zener voltage range from 6.2 V through 8.2 V. • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.


Cathode mark

Mark

1. Cathode

2. Anode

1 2U


RKZ-KP Series


R (10,000 pcs / reel)

Package Name : MP6

Mark Code Part No. Mark No.

RKZ6.2BKP U RKZ6.8BKP V RKZ8.2BKP W


Item Symbol Value Unit Power dissipation Pd *1 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. With P.C. Board.


Zener Voltage Reverse Current Dynamic Resistance ESD-Capability

VZ (V) *1 Test

Condition IR (µA) Test

Condition rd (Ω) Test

Condition (kV) *2 Part No. Min Max IZ (mA) Max VR (V) Max IZ (mA) Min

RKZ6.2BKP 5.86 6.53 5 2 3.0 50 5 30 RKZ6.8BKP 6.47 7.14 5 2 3.5 30 5 30 RKZ8.2BKP 7.76 8.64 5 2 5.0 30 5 30 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse.

Failure criterion should according to IR spec. 3. Please do not use the soldering iron due to avoid high stress to the MP6 package.

RKZ-KP Series

368


250

200

150

100

50

200150100500

0

Pow

er

Dis

sip

ation P

d (

mW

)

Ambient Temperature Ta (°C)

Fig.2 Power Dissipation vs. Ambient Temperature

Polyimide board

20h×15w×0.8t

Unit: mm

0 2 1086410-6

10-3

10-5

10-4

10-2

Zener Voltage VZ (V)

Fig.1 Zener current vs. Zener voltage

Zener

Curr

ent I Z

(

mA

)

RK

Z6.2

BK

P

RK

Z6.8

BK

P

RK

Z8.2

BK

P

3.0

0.8

1.5

1.5

369

HZL6.2Z4 Silicon Planar Zener Diode for Surge Absorb

Features • Low capacitance (C = 4.0 pF max) and can protect ESD of signal line.


1 2Y

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : EFP

HZL6.2Z4KRF


Item Symbol Value Unit Power dissipation Pd * 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: See Fig.2.


Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — — 4.0 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *1 — 8 — — kV C = 150 pF, R = 330 Ω, Both Forward

and reverse direction 10 pulse Notes: 1. Failure criterion ; IR > 3 µA at VR = 5.5 V. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HZL6.2Z4

370


t Ta = 25°Cnonrepetitive

Fig.3 Surge Reverse Power Ratings

Time t (ms)

1.0

10

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

102

103

104

PRSM

10 102 10310-2 10-1 1.0

0 2 10864

250

200

150

100

50

200150100500

0



Po

we

r D

issip

atio

n P

d (

mW

)

Polyimide board

3.0

0.8

1.5

20h×15w×0.8t

1.5

unit: mm

10–5

10–6

10–4

10–3

10–2



Ze

ne

r C

urr

en

t I Z

(

A)

371

HZL6.8Z4 Silicon Planar Zener Diode for Surge Absorb



1 2Z

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : EFP

HZL6.8Z4KRF




Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 4.0 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *1 — 8 — — kV C = 150 pF, R = 330 Ω, Both Forward

and reverse direction 10 pulse Notes: 1. Failure criterion ; IR > 2 µA at VR = 3.5 V. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


HZL6.8Z4

372




Time t (ms)

1.0

10

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

102

103

104

PRSM

10 102 10310–2 10–1 1.0

0 2 10864

250

200

150

100

50

200150100500

0



Po

we

r D

issip

atio

n P

d (

mW

)

Polyimide board

3.0

0.8

1.5

20h×15w×0.8t

1.5

unit: mm

10–5

10–6

10–4

10–3

10–2



Ze

ne

r C

urr

en

t I Z

(

A)

373

HZD6.2Z4 Silicon Planar Zener Diode for Surge Absorb



1 2

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : SFP

HZD6.2Z4KRF

N1




Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.9 — 6.5 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — — 4 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *1*2 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward

and reverse direction 10 pulse Notes: 1. Failure criterion ; IR > 3 µA at VR = 5.5 V. 2. Between cathode and anode. 3. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,


HZD6.2Z4

374




Time t (s)

1.0

10

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

102

103

104

PRSM

10 102 10310-2 10-1 1.0

0 2 10864

250

200

150

100

50

200150100500

0



Po

we

r D

issip

atio

n P

d (

mW

)

Polyimide board

3.0

0.8

1.5

20h×15w×0.8t

1.5

unit: mm

10–5

10–6

10–4

10–3

10–2



Ze

ne

r C

urr

en

t I Z

(

A)

375

HZD6.8Z4 Silicon Planar Zener Diode for Surge Absorb



1 2

Cathode mark

Mark

1. Cathode

2. Anode




Package Name : SFP

HZD6.8Z4KRF

N2




Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 4 pF VR = 1 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *1*2 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward

and reverse direction 10 pulse Notes: 1. Failure criterion ; IR > 2 µA at VR = 3.5 V. 2. Between cathode and anode. 3. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,


HZD6.8Z4

376




Time t (s)

1.0

10

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

102

103

104

PRSM

10 102 10310–2 10–1 1.0

0 2 10864

250

200

150

100

50

200150100500

0



Po

we

r D

issip

atio

n P

d (

mW

)

Polyimide board

3.0

0.8

1.5

20h×15w×0.8t

1.5

unit: mm

10–5

10–6

10–4

10–3

10–2



Ze

ne

r C

urr

en

t I Z

(

A)

377

HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb

Features • Low capacitance (C = 8.5 pF max) and can protect signal line from ESD.


HZU6.2ZTRF

Package Name : URP



TRF (3,000 pcs / reel) 1 2

Cathode mark

Mark

1. Cathode

2. Anode62Z




Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — 8.0 8.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA

HZU6.2Z

378




Time t (s)

1.0

10

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

102

103

104

PRSM

10-2 10-1 1.010-5 10-4 10-3

0 2 10864

250

200

150

100

50

200150100500

0



Po

we

r D

issip

atio

n P

d (

mW

)

Polyimide board

3.0

0.8

1.5

20hx15wx0.8t

1.5

unit: mm

10-5

10-6

10-4

10-3

10-2



Ze

ne

r C

urr

en

t I Z

(

A)

HZU6.2Z

379

1.0

10

102

103

104

10 102 10310-2 10-1 1.0

Fig.4 Transient Thermal Impedance

Time t (s)

Tra

nsie

nt T

herm

al Im

pedance Z

th (

°C/W

)

380

HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb

Features • Low capacitance (C = 25 pF max) and can protect signal line from ESD.


HZU6.8ZTRF

Package Name : URP



TRF (3,000 pcs / reel) 1 268Z

Cathode mark

Mark

1. Cathode

2. Anode




Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.0 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 25 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability * — 20 — — kV C = 150 pF, R = 330 Ω, Both forward

and reverse direction 10 pulse Note: Failure criterion ; IR > 2 µA at VR = 3.5 V.

HZU6.8Z

381


t

PRSM

1.0

10

Ta = 25°Cnonrepetitive


Time t (s)

102

103

104

10-2 10-1 1.010-5 10-4 10-3

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

250

200

150

100

50

200150100500

0



Po

we

r D

issip

atio

n P

d (

mW

)

Polyimide board

3.0

0.8

1.5

20hx15wx0.8t

1.5

unit: mm

0 2 10864

10-5

10-4

10-3

10-2

10-6



Ze

ne

r C

urr

en

t I Z

(

A)

HZU6.8Z

382

1.0

10

102

103

104

10 102 10310-2 10-1 1.0


Time t (s)

Tra

nsie

nt

Th

erm

al Im

pe

da

nce

Z

th

(°C

/W)

383

HZM6.2ZMWA Silicon Planar Zener Diode for Surge Absorb

Features • HZM6.2ZMWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.


2 1

62N

(Top view)

3HZM6.2ZMWATR, HZM6.2ZMWATL

Package Name : MPAK





1. Cathode

2. Cathode

3. Anode(Top View)

2 1

3


Item Symbol Value Unit Power dissipation Pd *1 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Two device total, See Fig.2.


Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — — 8.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *2 — 13 — — kV C = 150 pF, R = 330 Ω, Both forward

and reverse direction 10 pulse Notes: 1. Per one device 2. Failure criterion ; IR > 3 µA at VR = 5.5 V.

HZM6.2ZMWA

384




Time t (s)

1.0

10

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

102

103

104

10–2 10–1 1.010–5 10–4 10–3

PRSM

0 2 10864

250

200

150

100

50

200150100500

0

1.0mm

0.8

mm



Pow

er

Dis

sip

ation P

d (

mW

)

Printed circuit board25 62 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil

× ×

Cu Foil

10–5

10–6

10–4

10–3

10–2



Zener

Curr

ent I Z

(

A)

HZM6.2ZMWA

385

1.0

10

102

103

104

10 102 10310–2 10–1 1.0

Time t (s)

Tra

nsie

nt

Th

erm

al Im

pe

da

nce

Z

th

(°C

/W)

Fig.4 Transient Thermal Impedance *

Note: Measurement value by forward bias.

386

HZM6.2Z4MWA Silicon Planar Zener Diode for Surge Absorb

Features • HZM6.2Z4MWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ / 4.5 pF Max) and can protect ESD of signal line.


2 1

N1

(Top view)

3HZM6.2Z4MWATR, HZM6.2Z4MWATL

Package Name : MPAK





1. Cathode

2. Cathode

3. Anode(Top View)

2 1

3


Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Two device total, See Fig.2.


Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — 4.0 4.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *2 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward

and reverse direction 10 pulse Notes: 1. Per one device. 2. Failure criterion ; IR > 3 µA at VR = 5.5 V.

HZM6.2Z4MWA

387




Time t (ms)

1.0

10

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

102

103

104

10 102 10310–2 10–1 1.0

PRSM

0 2 10864

250

200

150

100

50

200150100500

0



Po

we

r D

issip

atio

n P

d (

mW

)

10–5

10–6

10–4

10–3

10–2



Ze

ne

r C

urr

en

t I Z

(

A)

1.0mm

0.8

mm


× ×

Cu Foil

388

HZM6.8ZMWA Silicon Planar Zener Diode for Surge Absorb

Features • HZM6.8ZMWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 25 pF max) and can protect ESD of signal line.


2 1

68N

(Top view)

3HZM6.8ZMWATR, HZM6.8ZMWATL

Package Name : MPAK





1. Cathode

2. Cathode

3. Anode(Top View)

2 1

3




Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.0 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 25 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2 — 20 — — kV C = 150 pF, R = 330 Ω, Both forward


HZM6.8ZMWA

389


t

PRSM



Time t (s)

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

1.01.0

10

102

103

104

10-2 10-110-4 10-310-5

0 2 10864 200150500

250

200

150

100

50

1000



Po

we

r D

issip

atio

n P

d (

mW

)

1.0mm

0.8

mm


× ×

Cu Foil

10-5

10-6

10-4

10-3

10-2



Ze

ne

r C

urr

en

t I Z

(

A)

HZM6.8ZMWA

390

1.0

10

101.0 102 10310-2 10-1

102

103

104


Time t (s)

Tra

nsie

nt

Th

erm

al Im

pe

da

nce

Z

th

(°C

/W)

391

HZM6.8Z4MWA Silicon Planar Zener Diode for Surge Absorb

Features • HZM6.8Z4MWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ / 4.5 pF max) and can protect ESD of signal line.


2 1

N2

(Top view)

3HZM6.8Z4MWATR, HZM6.8Z4MWATL

Package Name : MPAK





1. Cathode

2. Cathode

3. Anode(Top View)

2 1

3


Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: two device total, See Fig.2.


Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — 4.0 4.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward and

reverse direction 10 pulse Notes: 1. Per one device. 2. Failure criterion ; IR > 2 µA at VR = 3.5 V.

HZM6.8Z4MWA

392


t

PRSM



Time t (ms)

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

1031.0

10

10 10210–1 1.010–2

102

103

104

0 2 10864

250

200

150

100

50

200150100500



Po

we

r D

issip

atio

n P

d (

mW

)0

10–5

10–6

10–4

10–3

10–2



Ze

ne

r C

urr

en

t I Z

(

A)

1.0mm

0.8

mm


× ×

Cu Foil

393

HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb

Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge.


2 1

68M

(Top view)

3HZM6.8MWATR, HZM6.8MWATL

Package Name : MPAK





1. Cathode

2. Cathode

3. Anode(Top View)

2 1

3


Item Symbol Value Unit Power dissipation Pd *1 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Two device total, See Fig.2.


Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.0 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 130 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2, *3 — 30 — — kV C = 150 pF, R = 330 Ω, Both forward


HZM6.8MWA

394


0 1 2 3 4 5 6 7

10-5

10-6

10-4

10-7

10-3



Ze

ne

r C

urr

en

t

I Z (

A)

10-8

10-9

10-10

10-2

250

200

150

100

50

200150100500



Po

we

r D

issip

atio

n

Pd

(

mW

)

0

1.0mm

0.8

mm

Printed circuit board25 × 62 × 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil

Cu Foil

8

Ta=75°C

Ta=-25°CTa=25°C

395

HZM27WA Silicon Epitaxial Planar Zener Diode for Surge Absorb

Features • HZM27WA has two devices, and can absorb surge. • MPAK Package is suitable for high density surface mounting.


2 1

27A

(Top view)

3HZM27WATR, HZM27WATL

Package Name : MPAK





1. Cathode

2. Cathode

3. Anode(Top View)

2 1

3




Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 25.10 — 28.90 V IZ = 2 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 21 V Capacitance C — (27) *2 — pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 70 Ω IZ = 2 mA ESD-Capability *3 — 30 — — kV C = 150 pF, R = 330 Ω, Both forward

and reverse direction 10 pulse Notes: 1. Per one device. 2. Reference only. 3. Failure criterion ; IR > 2 µA at VR = 21 V

HZM27WA

396


250

200

150

100

50

200150100500



Po

we

r D

issip

atio

n

Pd

(

mW

)0

1.0mm

0.8

mm


× ×

Cu Foil

Fig.1 Zener Current vs. Zener Voltage


Ze

ne

r C

urr

en

t

I Z (

mA

)

0 5 10 15 20 25 30 35 40

10

8

6

4

2

0


Time t (s)

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)


t

PRSM

10-2 10-1 1.010-5 10-41.0

10

102

103

104

10-3

HZM27WA

397


Time t (s)

1.0

10

102

103

104

Tra

nsie

nt

Th

erm

al Im

pe

da

nce

Z

th

(°C

/W)

10 102 10310-2 10-1 1.0

398

HZM6.2ZMFA Silicon Planar Zener Diode for Surge Absorb

Features • HZM6.2ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.


1. Cathode

2. Cathode

3. Cathode

4. Anode


1 2

5 4 3

(Top View)

1 2

5 4 3

62N

HZM6.2ZMFATR, HZM6.2ZMFATL

Package Name : MPAK-5






Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Four device total, See Fig.2.


Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — — 8.5 pF VR =0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *2 — 13 — — kV C = 150 pF, R = 330 Ω , Both forward

and reverse direction 10 pulse. Notes: 1. Per one device 2. Failure criterion ; IR > 3 µA at VR = 5.5 V.

HZM6.2ZMFA

399




Time t (s)

1.0

10

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

102

103

104

10–2 10–1 1.010–5 10–4 10–3

PRSM

0 2 10864

250

200

150

100

50

200150100500

0



Po

we

r D

issip

atio

n P

d (

mW

)

1.0mm

0.6

mm


× ×

Cu Foil

10–5

10–6

10–4

10–3

10–2



Ze

ne

r C

urr

en

t I Z

(

A)

HZM6.2ZMFA

400

1.0

10

102

103

104

10 102 10310–2 10–1 1.0

Fig.4 Transient Thermal Impedance *

Time t (s)

Tra

nsie

nt

Th

erm

al Im

pe

da

nce

Z

th

(°C

/W)

Note: Measurement value by forward bias.

401

HZM6.2Z4MFA Silicon Planar Zener Diode for Surge Absorb

Features • HZM6.2Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ / 4.5 pF max) and can protect ESD of signal line.


1. Cathode

2. Cathode

3. Cathode

4. Anode

5. Cathode

1 2

5 4 3

(Top View)

1 2

5 4 3

(Top View)

N1

HZM6.2Z4MFATR, HZM6.2Z4MFATL









Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — 4.0 4.5 pF VR =0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *2 — 8 — — kV C = 150 pF, R = 330 Ω , Both forward


HZM6.2Z4MFA

402




Time t (s)

1.0

10

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

102

103

104

10 102 10310–2 10–1 1.0

PRSM

0 2 10864

250

200

150

100

50

200150100500

0



Po

we

r D

issip

atio

n P

d (

mW

)

1.0mm

0.6

mm


× ×

Cu Foil

10–5

10–6

10–4

10–3

10–2



Ze

ne

r C

urr

en

t I Z

(

A)

403

HZM6.8MFA Silicon Planar Zener Diode for Surge Absorb

Features • HZM6.8MFA has four devices in a monolithic, and can absorb surge.


1. Cathode

2. Cathode

3. Cathode

4. Anode

5. Cathode

1 2

5 4 3

(Top View)

1 2

5 4 3

(Top View)

68M

HZM6.8MFATR, HZM6.8MFATL









Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 130 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2 — 30 — — kV C = 150 pF, R = 330 Ω , Both forward


HZM6.8MFA

404


0

250

200

150

100

50

200150100500

1.0mm

0.6

mm



Po

we

r D

issip

atio

n

Pd

(

mW

)


× ×

Cu Foil

0 1 2 3 4 5 6 7 8



Ze

ne

r C

urr

en

t

I Z (

A)

Ta=75°C

Ta=25°C

Ta=-25°C

10-5

10-6

10-4

10-7

10-3

10-8

10-9

10-2

10-1

405

HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb

Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 25 pF max) and can protect ESD of signal line.


1. Cathode

2. Cathode

3. Cathode

4. Anode

5. Cathode

1 2

5 4 3

(Top View)

1 2

5 4 3

(Top View)

68N

HZM6.8ZMFATR, HZM6.8ZMFATL









Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 25 pF VR =0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2 — 25 — — kV C = 150 pF, R = 330 Ω , Both forward


HZM6.8ZMFA

406


t

PRSM



Time t (s)

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

1.01.0

10

10-2 10-110-4 10-310-5

102

103

104

0 2 10864

250

200

150

100

50

200150100500



Po

we

r D

issip

atio

n P

d (

mW

)0


× ×

Cu Foil

1.0mm

0.6

mm

10-5

10-6

10-4

10-3

10-2



Ze

ne

r C

urr

en

t I Z

(

A)

HZM6.8ZMFA

407

1.0

10

101.0

102

103

104

10-2 10-1 102 103


Time t (s)

Tra

nsie

nt

Th

erm

al Im

pe

da

nce

Z

th

(°C

/W)

408

HZM6.8Z4MFA Silicon Planar Zener Diode for Surge Absorb

Features • HZM6.8Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ / 4.5 pF max) and can protect ESD of signal line.


1. Cathode

2. Cathode

3. Cathode

4. Anode

5. Cathode

1 2

5 4 3

(Top View)

1 2

5 4 3

(Top View)

N2

HZM6.8Z4MFATR, HZM6.8Z4MFATL









Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — 4.0 4.5 pF VR =0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2 — 8 — — kV C = 150 pF, R = 330 Ω , Both forward


HZM6.8Z4MFA

409


t

PRSM



Time t (s)

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

1031.0

10

10 10210–1 1.010–2

102

103

104

0 2 10864

250

200

150

100

50

200150100500



Po

we

r D

issip

atio

n P

d (

mW

)0


× ×

Cu Foil

1.0mm

0.6

mm

10–5

10–6

10–4

10–3

10–2



Ze

ne

r C

urr

en

t I Z

(

A)

410

HZM27FA Silicon Epitaxial Planar Zener Diode for Surge Absorb

Features • HZM27FA has four devices, and can absorb surge.


1. Cathode

2. Cathode

3. Cathode

4. Anode

5. Cathode

1 2

5 4 3

(Top View)

1 2

5 4 3

(Top View)

27A

HZM27FATR, HZM27FATL









Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 25.10 — 28.90 V IZ = 2 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 21 V Capacitance C — (27) *2 — pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 70 Ω IZ = 2 mA ESD-Capability *3 — 30 — — kV C = 150 pF, R = 330 Ω , Both forward

and reverse direction 10 pulse. Notes: 1. Per one device 2. Reference only 3. Failure criterion ; IR > 2 µA at VR = 21 V

HZM27FA

411


0

10-6

10-7

10-5

10-8

10-4

10-9

10-10

10-11

10-3

200

10 20 305 2515

0

250

200

150

100

50

150100500

1.0mm

0.6

mm



Po

we

r D

issip

atio

n

Pd

(

mW

)


× ×

Cu Foil


Zener Voltage Vz (V)

Ze

ne

r C

urr

en

t

I Z (

A)

412

RKZ6.2Z4MFAKT Silicon Planar Zener Diode for Surge Absorption

Features • RKZ6.2Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ) and can protect ESD of signal line.


1. Cathode

2. Cathode

3. Cathode

4. Anode

5. Cathode

1 2

5 4 3

(Top View)

1 2

5 4 3

N4 ∗

(Top View)

(Month code)

RKZ6.2Z4MFAKTP, RKZ6.2Z4MFAKTH

Package Name : VSON-5

Package Code: PUSN0005KB-A


P(3,000 pcs / reel)

H(3,000 pcs / reel)

Month Code Assemble Assemble

Month of Manufacture JAPAN MALAYSIA Month of Manufacture JAPAN MALAYSIAJanuary A 1 July G 7 February B 2 August H 8 March C 3 September J 9 April D 4 October K W May E 5 November L X June F 6 December M Y




Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — 4.0 4.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *2, *3 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward and

reverse direction 10 pulse Notes: 1. Per one device. 2. Failure criterion ; IR > 3 µA at VR = 5.5 V. 3. Between cathode and anode.

RKZ6.2Z4MFAKT

413


10 102 10310–2 10–11.0

10

102

103

104

1.0

250

200

150

100

50

200150100500

0

3.0

0.3

2.4

5

3.8

1.75

1.01.5

With polyimide board

20h × 15w × 0.8tUnit: mm

Zener

Curr

ent I Z

(

A)


Ambient Temperature Ta (°C)P

ow

er

Dis

sip

ation P

d (

mW

)


t

PRSM


Time t (ms)

Nonre

petitive S

urg

e R

evers

es P

ow

er

P

RS

M (

W)



0 82 4 6

10-6

10-7

10-8

10-9

10-10

10-11

10-2

10-3

10-4

10-5

414

RKZ6.8ZMFAKT Silicon Planar Zener Diode for Surge Absorption

Features • RKZ6.8ZMFAKT has four devices in a monolithic, and can absorb surge.


1. Cathode

2. Cathode

3. Cathode

4. Anode

5. Cathode

1 2

5 4 3

(Top View)

1 2

5 4 3

N3 ∗

(Top View)

(Month code)

RKZ6.8ZMFAKTP, RKZ6.8ZMFAKTH




P(3,000 pcs / reel)

H(3,000 pcs / reel)






Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 0.5 µA VR = 3.5 V Capacitance C — — 25 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2, *3 — 25 — — kV C = 150 pF, R = 330 Ω, Both forward and

reverse direction 10 pulse Notes: 1. Per one device. 2. Failure criterion ; IR > 0.5 µA at VR = 3.5 V. 3. Between cathode and anode.

RKZ6.8ZMFAKT

415


10–2 10–1 1.010–5 10–41.0

10

102

103

104

10–3

250

200

150

100

50

200150100500

0

3.0

0.3

2.4

5

3.8

1.75

1.01.5


20h × 15w × 0.8tUnit: mm



ow

er

Dis

sip

atio

n P

d (

mW

)


t

PRSM


Time t (s)

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)



10-6

10-7

10-8

10-9

10-10

10-11

10-2

10-3

10-4

10-5

Ze

ne

r C

urr

en

t I Z

(

A)

0 72 4 61 3 5

RKZ6.8ZMFAKT

416

1.0

10

102

103

104

10 102 10310–2 10–1 1.0


Time t (s)

Tra

nsie

nt T

he

rma

l Im

pe

da

nce

Z

th (

°C/W

)

417

RKZ6.8Z4MFAKT Silicon Planar Zener Diode for Surge Absorption

Features • RKZ6.8Z4MFAKT has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ) and can protect ESD of signal line.


1. Cathode

2. Cathode

3. Cathode

4. Anode

5. Cathode

1 2

5 4 3

(Top View)

1 2

5 4 3

N5 ∗

(Top View)

(Month code)

RKZ6.8Z4MFAKTP, RKZ6.8Z4MFAKTH




P(3,000 pcs / reel)

H(3,000 pcs / reel)






Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — 4.0 4.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2, *3 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward and

reverse direction 10 pulse Notes: 1. Per one device. 2. Failure criterion ; IR > 2 µA at VR = 3.5 V. 3. Between cathode and anode.

RKZ6.8Z4MFAKT

418


10 102 10310–2 10–11.0

10

102

103

104

1.0

250

200

150

100

50

200150100500

0

3.0

0.3

2.4

5

3.8

1.75

1.01.5


20h × 15w × 0.8tUnit: mm



ow

er

Dis

sip

ation P

d (

mW

)


t

PRSM


Time t (ms)

Nonre

petitive S

urg

e R

evers

es P

ow

er

P

RS

M (

W)



10-6

10-7

10-8

10-9

10-10

10-11

10-2

10-3

10-4

10-5

Zener

Curr

ent I Z

(

A)

0 72 4 61 3 5

419

RKZ6.8TKK, RKZ6.8TKJ Silicon Planar Zener Diode for Bidirectional Surge Absorption

Features • This product is for a two-way zener diode so its possible to use for bidirectional surge absorption. • Surge absorption for electronic devices such as LED-equipped devices.


1 2

Cathode mark

Mark

1. Cathode

2. Anode

N3

1 2

(Top View)

RKZ6.8TKJR

Package Name : UFP



R(8,000 pcs / reel)

1 2

Cathode mark

Mark

1. Cathode

2. Anode

N3

1 2

(Top View)

RKZ6.8TKKR

Package Name : SFP



R(8,000 pcs / reel)


Item Symbol Value Unit Power dissipation Pd *2 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Per one device 2. See Fig.2.


Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.80 — 7.80 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 0.5 µA VR = 3.5 V ESD-Capability *1 — 25 — — kV C = 150 pF, R = 330 Ω, Both forward

and reverse direction 10 pulse Notes: 1. Failure criterion ; IR > 0.5 µA at VR = 3.5 V.( Both direction) 2. In the EFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.


RKZ6.8TKK, RKZ6.8TKJ

420




Time t (ms)

1.0

10

No

nre

pe

titive

Su

rge

Re

ve

rse

s P

ow

er

P

RS

M (

W)

102

103

104

PRSM

10 102 10310–2 10–1 1.0

0 2 10864

250

200

150

100

50

200150100500

0



Po

we

r D

issip

atio

n P

d (

mW

)

Polyimide board

3.0

0.8

1.5

20h×15w×0.8t

1.5

unit: mm

10–5

10–6

10–4

10–3

10–2



Ze

ne

r C

urr

en

t I Z

(

A)

421

RKZ27TKG Silicon Epitaxial Planar Zener Diode for Bidirectional Surge Absorption

Features • 1 package with Bidirectional characteristic suppresses surges in both forward and reverse directions (positive and

negative surges). • High ESD resistance (guarantee of 30 kV , compliant with the IEC 61000-4-2 standard) • Suitable for protecting CAN/LIN-BUS lines. • Support for specifications of automobiles.


Cathode mark

Mark

N6

RKZ27TKGP

Package Name : URP



P(3,000 pcs / reel)


Item Symbol Value Unit Power dissipation Pd 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C


Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 26.2 — 31.5 V IZ = 1 mA, 40 ms pulse Reverse current IR — — 0.1 µA VR = 24 V Capacitance C — — 30 pF VR = 0 V, f = 1 MHz ESD-Capability *1 — 30 — — kV C = 150 pF, R = 330 Ω, Both forward

and reverse direction 10 pulse Note: Failure criterion ; IR > 0.1 µA at VR = 24 V. (Both direction)

RKZ27TKG

422


250

200

150

100

50

200150100500

0



Pow

er

Dis

sip

ation P

d (

mW

)

Polyimide board

3.0

0.8

1.5

20h×15w×0.8t

1.5

unit: mm



Zener

Curr

ent I Z

(

A)

0 5 30201510

10–5

10–6

10–3

10–2

2510-8

10-7

10-4

423

RKZ27TWAQE Silicon Epitaxial Planar Zener Diode for Bidirectional Surge Absorption

Features • 2 lines with bidirectional characteristic in 1 package suppresses surges in both forward and reverse directions

(positive and negative surges). • High ESD resistance (guarantee of 30 kV , compliant with the IEC 61000-4-2 standard) • Suitable for protecting CAN-BUS lines. • Support for specifications of automobiles.


N6

(Top View)

Mark

2 1

3

2 1

3RKZ27TWAQEH


Package Code : PTSP0003ZB-A


H(3,000 pcs / reel)


Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1 package total, See Fig.2.


Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 26.2 — 31.5 V IZ = 1 mA, 40 ms pulse Reverse current IR — — 0.1 µA VR = 24 V Capacitance C — — 30 pF VR = 0 V, f = 1 MHz ESD-Capability *2 — 30 — — kV C = 150 pF, R = 330 Ω, Both forward

and reverse direction 10 pulse Notes: 1. Per one device 2. Failure criterion ; IR > 0.1 µA at VR = 24 V. (Both direction)

RKZ27TWAQE

424


250

200

150

100

50

200150100500

0



Pow

er

Dis

sip

ation P

d (

mW

)



Zener

Curr

ent I Z

(

A)

Printed circuit board

Material: Glass Epoxy Resin+Cu Foil

Cu Foil

1.0mm

0.8

mm

25 × 62 × 1.6t mm

0 5 30201510

10–5

10–6

10–3

10–2

2510-8

10-7

10-4

425

HZ Series Silicon Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized

power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.



1. Cathode

2. Anode

HZ Series




7B 2

Part No.

1 2



HZ Series

426


Zener Voltage Reverse Current Dynamic Resistance

VZ (V)*1 Test

Condition IR (μA) Test


Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)

A1 1.6 1.8 A2 1.7 1.9 A3 1.8 2.0

5 25 0.5 100 5

B1 1.9 2.1 B2 2.0 2.2 B3 2.1 2.3 C1 2.2 2.4 C2 2.3 2.5

HZ2

C3 2.4 2.6

5 5 0.5 100 5

A1 2.5 2.7 A2 2.6 2.8 A3 2.7 2.9 B1 2.8 3.0 B2 2.9 3.1 B3 3.0 3.2 C1 3.1 3.3 C2 3.2 3.4

HZ3

C3 3.3 3.5

5 5 0.5 100 5

A1 3.4 3.6 A2 3.5 3.7 A3 3.6 3.8 B1 3.7 3.9 B2 3.8 4.0 B3 3.9 4.1 C1 4.0 4.2 C2 4.1 4.3

HZ4

C3 4.2 4.4

5 5 1.0 100 5

A1 4.3 4.5 A2 4.4 4.6 A3 4.5 4.7 B1 4.6 4.8 B2 4.7 4.9 B3 4.8 5.0 C1 4.9 5.1 C2 5.0 5.2

HZ5

C3 5.1 5.3

5 5 1.5 100 5

A1 5.2 5.5 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 B2 5.6 5.9 B3 5.7 6.0 C1 5.8 6.1 C2 6.0 6.3

HZ6

C3 6.1 6.4

5 5 2.0 40 5

Note: 1. Tested with DC.

HZ Series

427

(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance

VZ (V)*1 Test




A1 6.3 6.6 A2 6.4 6.7 A3 6.6 6.9 B1 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 C1 7.2 7.6 C2 7.3 7.7

HZ7

C3 7.5 7.9

5 1 3.5 15 5

A1 7.7 8.1 A2 7.9 8.3 A3 8.1 8.5 B1 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5

HZ9

C3 9.3 9.7

5 1 5.0 20 5

A1 9.5 9.9 A2 9.7 10.1 A3 9.9 10.3 B1 10.2 10.6 B2 10.4 10.8 B3 10.7 11.1 C1 10.9 11.3 C2 11.1 11.6

HZ11

C3 11.4 11.9

5 1 7.5 25 5

A1 11.6 12.1 A2 11.9 12.4 A3 12.2 12.7 B1 12.4 12.9 B2 12.6 13.1 B3 12.9 13.4 C1 13.2 13.7 C2 13.5 14.0

HZ12

C3 13.8 14.3

5 1 9.5 35 5

-1 14.1 14.7 -2 14.5 15.1

HZ15

-3 14.9 15.5

5 1 11.0 40 5

-1 15.3 15.9 -2 15.7 16.5

HZ16

-3 16.3 17.1

5 1 12.0 45 5

-1 16.9 17.7 -2 17.5 18.3

HZ18

-3 18.1 19.0

5 1 13.0 55 5


HZ Series

428


VZ (V)*1 Test




-1 18.8 19.7 -2 19.5 20.4

HZ20

-3 20.2 21.1

2 1 15.0 60 2

-1 20.9 21.9 -2 21.6 22.6

HZ22

-3 22.3 23.3

2 1 17.0 65 2

-1 22.9 24.0 -2 23.6 24.7

HZ24

-3 24.3 25.5

2 1 19.0 70 2

-1 25.2 26.6 -2 26.2 27.6

HZ27

-3 27.2 28.6

2 1 21.0 80 2

-1 28.2 29.6 -2 29.2 30.6

HZ30

-3 30.2 31.6

2 1 23.0 100 2

-1 31.2 32.6 -2 32.2 33.6

HZ33

-3 33.2 34.6

2 1 25.0 120 2

-1 34.2 35.7 -2 35.3 36.8

HZ36

-3 36.4 38.0

2 1 27.0 140 2

Notes: 1. Tested with DC. 2. Type No. is as follows; HZ2B1, HZ2B2, HZ36-3.

HZ Series

429


0 5 10 15 20 25 30 35 40

50

40

30

20

10

0

mV/°C

500

400

300

200

100

200150100500

0

2.5 mm

3 mm


100 × 180 × 1.6t mm

Material: paper phenol

5 mm

Ze

ne

r C

urr

en

t I Z

(

A)



Po

we

r D

issip

atio

n P

d (

mW

)

−10

−20

−30

−40

−50 Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(

mV

/°C

)

%/°C

0.10

0.08

0.06

0.04

0.02

−0.02

−0.04

−0.06

−0.08

−0.10Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(

%/°

C)

0

Fig.2 Temperature Coefficient vs. Zener voltage


5 15 25 30 35 40

10-2



10-3

10-4

10-5

10-6

10-7

10-8

0

HZ

2B

2

10 20

HZ

12

B2

HZ

9B

2

HZ

15

-2

HZ

7B

2

HZ

6B

2

HZ

5B

2H

Z4

B2

HZ

3B

2

HZ

11

B2

HZ

16

-2

HZ

18

-2

HZ

36

-2

HZ

33

-2

HZ

30

-2

HZ

27

-2

HZ

24

-2

HZ

22

-2

HZ

20

-2

430

HZS Series Silicon Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed automatic insertion.


1. Cathode

2. Anode

HZS Series



TA (5,000 pcs / reel) Part No.

1 2

B

27

Cathode band (Lake Blue)



HZS Series

431



VZ (V)*1 Test




A1 1.6 1.8 A2 1.7 1.9 A3 1.8 2.0

5 25 0.5 100 5

B1 1.9 2.1 B2 2.0 2.2 B3 2.1 2.3 C1 2.2 2.4 C2 2.3 2.5

HZS2

C3 2.4 2.6

5 5 0.5 100 5

A1 2.5 2.7 A2 2.6 2.8 A3 2.7 2.9 B1 2.8 3.0 B2 2.9 3.1 B3 3.0 3.2 C1 3.1 3.3 C2 3.2 3.4

HZS3

C3 3.3 3.5

5 5 0.5 100 5

A1 3.4 3.6 A2 3.5 3.7 A3 3.6 3.8 B1 3.7 3.9 B2 3.8 4.0 B3 3.9 4.1 C1 4.0 4.2 C2 4.1 4.3

HZS4

C3 4.2 4.4

5 5 1.0 100 5

A1 4.3 4.5 A2 4.4 4.6 A3 4.5 4.7 B1 4.6 4.8 B2 4.7 4.9 B3 4.8 5.0 C1 4.9 5.1 C2 5.0 5.2

HZS5

C3 5.1 5.3

5 5 1.5 100 5

A1 5.2 5.5 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 B2 5.6 5.9 B3 5.7 6.0 C1 5.8 6.1 C2 6.0 6.3

HZS6

C3 6.1 6.4

5 5 2.0 40 5


HZS Series

432


VZ (V)*1 Test




A1 6.3 6.6 A2 6.4 6.7 A3 6.6 6.9 B1 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 C1 7.2 7.6 C2 7.3 7.7

HZS7

C3 7.5 7.9

5 1 3.5 15 5

A1 7.7 8.1 A2 7.9 8.3 A3 8.1 8.5 B1 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5

HZS9

C3 9.3 9.7

5 1 5.0 20 5

A1 9.5 9.9 A2 9.7 10.1 A3 9.9 10.3 B1 10.2 10.6 B2 10.4 10.8 B3 10.7 11.1 C1 10.9 11.3 C2 11.1 11.6

HZS11

C3 11.4 11.9

5 1 7.5 25 5

A1 11.6 12.1 A2 11.9 12.4 A3 12.2 12.7 B1 12.4 12.9 B2 12.6 13.1 B3 12.9 13.4 C1 13.2 13.7 C2 13.5 14.0

HZS12

C3 13.8 14.3

5 1 9.5 35 5

-1 14.1 14.7 -2 14.5 15.1

HZS15

-3 14.9 15.5

5 1 11.0 40 5

-1 15.3 15.9 -2 15.7 16.5

HZS16

-3 16.3 17.1

5 1 12.0 45 5

-1 16.9 17.7 -2 17.5 18.3

HZS18

-3 18.1 19.0

5 1 13.0 55 5


HZS Series

433


VZ (V)*1 Test




-1 18.8 19.7 -2 19.5 20.4

HZS20

-3 20.2 21.1

2 1 15.0 60 2

-1 20.9 21.9 -2 21.6 22.6

HZS22

-3 22.3 23.3

2 1 17.0 65 2

-1 22.9 24.0 -2 23.6 24.7

HZS24

-3 24.3 25.5

2 1 19.0 70 2

-1 25.2 26.6 -2 26.2 27.6

HZS27

-3 27.2 28.6

2 1 21.0 80 2

-1 28.2 29.6 -2 29.2 30.6

HZS30

-3 30.2 31.6

2 1 23.0 100 2

-1 31.2 32.6 -2 32.2 33.6

HZS33

-3 33.2 34.6

2 1 25.0 120 2

-1 34.2 35.7 -2 35.3 36.8

HZS36

-3 36.4 38.0

2 1 27.0 140 2

Notes: 1. Tested with DC. 2. Type No. is as follows; HZS2B1, HZS2B2, HZS36-3.

HZS Series

434


5 10 15 20 25 30 35 400

HZ

S2

B2

HZ

S9

B2

HZ

S1

2B

2

HZ

S1

6-2

HZ

S4B

2H

ZS

6B

2

HZ

S2

0-2

HZ

S2

4-2

HZ

S3

0-2

HZ

S3

6-2

500

400

300

200

100

200150100500

0

2.5 mm

3 mm


100 180 1.6t mm


× ×

l

l = 5 mm

l = 10 mm(Publication value)

Ze

ne

r C

urr

en

t I Z

(

A)



10–5

10–6

10–4

10–3

10–2

10–7

10–8

Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(

mV

/°C

)

Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(

%/°

C)





Po

we

r D

issip

atio

n P

d (

mW

)

0 5 10 15 20 25 30 35 40

50

40

30

20

10

0

mV/°C

−10

−20

−30

−40

−50

%/°C

0.10

0.08

0.06

0.04

0.02

−0.02

−0.04

−0.06

−0.08

−0.10

0

435

HZK Series Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW. • Wide spectrum from 1.9V through 38V of zener voltage provide flexible application.


1. Cathode

2. Anode

1 2

Cathode band

3rd. band2nd. band

1 2

Cathode band

3rd. band2nd. band

HZK Series

Package Name : LLDPackage Code : GLZZ0002ZA-A





Item Symbol Value Unit Power dissipation Pd * 500 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C Note: With P.C. Board.

HZK Series

436



VZ (V)*1 Test




B 1.9 2.3 HZK2 C 2.2 2.6

5 5 0.5 100 5

A 2.5 2.9 B 2.8 3.2

HZK3

C 31 3.5

5 5 0.5 100 5

A 3.4 3.8 B 3.7 4.1

HZK4

C 4.0 4.4

5 5 1.0 100 5

A 4.3 4.7 B 4.6 5.0

HZK5

C 4.9 5.3

5 5 1.5 100 5

A 5.2 5.7 B 5.5 6.0

HZK6

C 5.8 6.4

5 5 2 40 5

A 6.3 6.9 B 6.7 7.3

HZK7

C 7.2 7.9

5 1 3.5 15 5

A 7.7 8.5 B 8.3 9.1

HZK9

C 8.9 9.7

5 1 5 20 5

A 9.5 10.3 B 10.2 11.1

HZK11

C 10.9 11.9

5 1 7.5 25 5

A 11.6 12.7 B 12.4 13.4

HZK12

C 13.2 14.3

5 1 9.5 35 5

HZK15 14.1 15.5 5 1 11 40 5 HZK16 15.3 17.1 5 1 12 45 5 HZK18 16.9 19.0 5 1 13 55 5 HZK20 18.8 21.1 2 1 15 60 2 HZK22 20.9 23.3 2 1 17 65 2 HZK24 22.9 25.5 2 1 19 70 2 HZK27 25.2 28.6 2 1 21 80 2 HZK30 28.2 31.6 2 1 23 100 2 HZK33 31.2 34.6 2 1 25 120 2 HZK36 34.2 38.0 2 1 27 140 2 Note: Tested with DC. Type No. is as follows: HZK2B, HZK2C, ••• HZK36.

HZK Series

437

Mark Color Code Type Cathode Band Second Band Third Band

HZK2B Yellow Green Yellow Ocher Verdure HZK2C Yellow Green Yellow Ocher Light Blue HZK3A Yellow Green Pink Pink HZK3B Yellow Green Pink Verdure HZK3C Yellow Green Pink Light Blue HZK4A Yellow Green Orange Pink HZK4B Yellow Green Orange Verdure HZK4C Yellow Green Orange Light Blue HZK5A Yellow Green Yellow Pink HZK5B Yellow Green Yellow Verdure HZK5C Yellow Green Yellow Light Blue HZK6A Yellow Green Verdure Pink HZK6B Yellow Green Verdure Verdure HZK6C Yellow Verdure Verdure Light Blue HZK7A Yellow Green Yellow Green Pink HZK7B Yellow Green Yellow Green Verdure HZK7C Yellow Green Yellow Green Light Blue HZK9A Yellow Green Purple Pink HZK9B Yellow Green Purple Verdure HZK9C Yellow Green Purple Light Blue HZK11A Yellow Green Light Blue Pink HZK11B Yellow Green Light Blue Verdure HZK11C Yellow Green Light Blue Light Blue HZK12A Yellow Green White Pink HZK12B Yellow Green White Verdure HZK12C Yellow Green White Light Blue HZK15 Light Blue Black Pink HZK16 Light Blue Yellow Ocher Pink HZK18 Light Blue Pink Pink HZK20 Light Blue Orange Pink HZK22 Light Blue Yellow Pink HZK24 Light Blue Verdure Pink HZK27 Light Blue Yellow Green Pink HZK30 Light Blue Purple Pink HZK33 Light Blue Light Blue Pink HZK36 Light Blue White Pink

HZK Series

438


10

8

6

4

2

04 8 12 16 20

HZK4HZK5

HZK6

24 28 32 4036

HZK16

HZ

K7

HZ

K1

2

HZ

K1

5

HZ

K1

8

HZ

K11

HZ

K9

HZ

K2

HZ

K2

0

HZ

K27

HZ

K22

HZ

K33

HZ

K36

HZ

K30

HZ

K3

HZ

K24

0



Zener

Curr

ent I Z

(

mA

)

0 5 10 15 20 25 30 35 40

50

40

30

20

10

0

-10

-20

-30

-40

-50

0.10

0.08

0.06

0.04

0.02

0

-0.02

-0.04

-0.06

-0.08

-0.10

%/°C

mV/°C

500

400

300

200

100

200150100500

0

2.5mm

3mm


15 × 20 × 1.6t mm

Material: Glass epoxy



Zener

Voltage T

em

pera

ture

Coeffic

ient

γ z

(

mV

/°C

)

Zener

Voltage T

em

pera

ture

Coeffic

ient

γ z

(

%/°

C)



Pow

er

Dis

sip

ation P

d (

mW

)

439

HZU Series Silicon Planar Zener Diode for Stabilizer

Features • These diodes are delivered taped.


Cathode mark

Mark

1 2

1. Cathode

2. Anode

2•0

HZU Series






HZU Series

440



VZ (V)*1 Test

Condition IR (μA)Test



HZU2.0 B 1.90 2.20 5 120 0.5 100 5 HZU2.2 B 2.10 2.40 5 120 0.7 100 5 HZU2.4 B 2.30 2.60 5 120 1.0 100 5

B 2.50 2.90 B1 2.50 2.75

HZU2.7

B2 2.65 2.90

5 120 1.0 110 5

B 2.80 3.20 B1 2.80 3.05

HZU3.0

B2 2.95 3.20

5 50 1.0 120 5

B 3.10 3.50 B1 3.10 3.35

HZU3.3

B2 3.25 3.50

5 20 1.0 130 5

B 3.40 3.80 B1 3.40 3.65

HZU3.6

B2 3.55 3.80

5 10 1.0 130 5

B 3.70 4.10 B1 3.70 3.97

HZU3.9

B2 3.87 4.10

5 10 1.0 130 5

B 4.01 4.48 B1 4.01 4.21 B2 4.15 4.34

HZU4.3

B3 4.28 4.48

5 10 1.0 130 5

B 4.42 4.90 B1 4.42 4.61 B2 4.55 4.75

HZU4.7

B3 4.69 4.90

5 10 1.0 130 5

B 4.84 5.37 B1 4.84 5.04 B2 4.98 5.20

HZU5.1

B3 5.14 5.37

5 5 1.5 130 5

B 5.31 5.92 B1 5.31 5.55 B2 5.49 5.73

HZU5.6

B3 5.67 5.92

5 5 2.5 80 5

B 5.86 6.53 B1 5.86 6.12 B2 6.06 6.33

HZU6.2

B3 6.26 6.53

5 2 3.0 50 5

B 6.47 7.14 B1 6.47 6.73 B2 6.65 6.93

HZU6.8

B3 6.86 7.14

5 2 3.5 30 5

B 7.06 7.84 B1 7.06 7.36 B2 7.28 7.60

HZU7.5

B3 7.52 7.84

5 2 4.0 30 5

Note: 1. Tested with pulse (PW = 40 ms)

HZU Series

441


VZ (V)*1 Test




B 7.76 8.64 B1 7.76 8.10 B2 8.02 8.36

HZU8.2

B3 8.28 8.64

5 2 5.0 30 5

B 8.56 9.55 B1 8.56 8.93 B2 8.85 9.23

HZU9.1

B3 9.15 9.55

5 2 6.0 30 5

B 9.45 10.55 B1 9.45 9.87 B2 9.77 10.21

HZU10

B3 10.11 10.55

5 2 7.0 30 5

B 10.44 11.56 B1 10.44 10.88 B2 10.76 11.22

HZU11

B3 11.10 11.56

5 2 8.0 30 5

B 11.42 12.60 B1 11.42 11.90 B2 11.74 12.24

HZU12

B3 12.08 12.60

5 2 9.0 35 5

B 12.47 13.96 B1 12.47 13.03 B2 12.91 13.49

HZU13

B3 13.37 13.96

5 2 10.0 35 5

B 13.84 15.52 B1 13.84 14.46 B2 14.34 14.98

HZU15

B3 14.85 15.52

5 2 11.0 40 5

B 15.37 17.09 B1 15.37 16.01 B2 15.58 16.51

HZU16

B3 16.35 17.09

5 2 12.0 40 5

B 16.94 19.03 B1 16.94 17.70 B2 17.56 18.35

HZU18

B3 18.21 19.03

5 2 13.0 45 5

B 18.86 21.08 B1 18.86 19.70 B2 19.52 20.39

HZU20

B3 20.21 21.08

5 2 15.0 50 5

B 20.88 23.17 B1 20.88 21.77 B2 21.54 22.47

HZU22

B3 22.23 23.17

5 2 17.0 55 5

B 22.93 25.57 B1 22.93 23.96 B2 23.72 24.78

HZU24

B3 24.54 25.57

5 2 19.0 60 5

Note: 1. Tested with pulse (PW = 40 ms)

HZU Series

442


VZ (V)*1 Test




HZU27 B 25.10 28.90 2 2 21.0 70 2 HZU30 B 28.00 32.00 2 2 23.0 80 2 HZU33 B 31.00 35.00 2 2 25.0 80 2 HZU36 B 34.00 38.00 2 2 27.0 90 2 Note: 1. Tested with pulse (PW = 40 ms).

Mark Code Type Grade Mark No. Type Grade Mark No. Type Grade Mark No.

HZU2.0 B 2 • 0 B1 6 • 2 B1 1 3 • HZU2.2 B 2 • 2 B2 6 • 2 B2 1 3 • HZU2.4 B 2 • 4

HZU6.2

B3 6 • 2

HZU13

B3 1 3 • B1 2 • 7 B1 6 • 8 B1 1 5 • HZU2.7 B2 2 • 7 B2 6 • 8 B2 1 5 • B1 3 • 0

HZU6.8

B3 6 • 8

HZU15

B3 1 5 • HZU3.0 B2 3 • 0 B1 7 • 5 B1 1 6 • B1 3 • 3 B2 7 • 5 B2 1 6 • HZU3.3 B2 3 • 3

HZU7.5

B3 7 • 5

HZU16

B3 1 6 • B1 3 • 6 B1 8 • 2 B1 1 8 • HZU3.6 B2 3 • 6 B2 8 • 2 B2 1 8 • B1 3 • 9

HZU8.2

B3 8 • 2

HZU18

B3 1 8 • HZU3.9 B2 3 • 9 B1 9 • 1 B1 2 0 • B1 4 • 3 B2 9 • 1 B2 2 0 • B2 4 • 3

HZU9.1

B3 9 • 1

HZU20

B3 2 0 • HZU4.3

B3 4 • 3 B1 1 0 • B1 2 2 • B1 4 • 7 B2 1 0 • B2 2 2 • B2 4 • 7

HZU10

B3 1 0 •

HZU22

B3 2 2 • HZU4.7

B3 4 • 7 B1 1 1 • B1 2 4 • B1 5 • 1 B2 1 1 • B2 2 4 • B2 5 • 1

HZU11

B3 1 1 •

HZU24

B3 2 4 • HZU5.1

B3 5 • 1 B1 1 2 • HZU27 B 2 7 • B1 5 • 6 B2 1 2 • HZU30 B 3 0 • B2 5 • 6

HZU12

B3 1 2 • HZU33 B 3 3 • HZU5.6

B3 5 • 6 HZU36 B 3 6 • Notes: 1. Example of Marking

(1) One grade type (B) (2) Two grade type (B1,B2)

Upper

(3) Three grade type (B1,B2,B3)

30• 3•0

HZU30B HZU3.0B1

3•0

HZU3.0B2

4•3

HZU4.3B1

4•3

HZU4.3B3

4•3

HZU4.3B2

2•0

HZU2.0B

Center Lower

2. The grade B type includes from B1 min. to B3 (or B2) max. 3. B grade is standard and has better delivery, these are marked one of B1, B2, B3. 4. Type No. is as follows; HZU2.0B, HZU2.2B, ••• HZU36B. (B grade) 5. Type No. is as follows; HZU2.7B1, HZU2.7B2, ••• HZU24B3. (B 1, B2, B3 grade)

HZU Series

443


250

200

150

100

50

200150100500

0

10

8

6

4

2

040 8 12 16 20 24 28 32 4036

HZ

U1

8

HZ

U2

.0

HZ

U2

0

HZ

U2

.4H

ZU

3.0

HZ

U3

.6H

ZU

4.3

HZ

U5

.1H

ZU

6.2

HZ

U7

.5H

ZU

8.2

HZ

U9

.1H

ZU

10

HZ

U1

3

HZ

U1

6

HZ

U36

HZ

U33

HZ

U30

HZ

U27

HZ

U6

.8

HZ

U1

2

HZ

U22

0.8mm0.8mm

0.8

mm

1.5mm

HZ

U1

1

HZ

U1

5

HZ

U24


5×20×1.6t mmMaterial: Glass Epoxy Resin+Cu Foil

Cu Foil

Po

we

r D

issip

atio

n

Pd

(

mW

)



Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(

%/°

C)

Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(m

V/°

C)





Ze

ne

r C

urr

en

t

I Z (

mA

)

0 5 10 15 20 25 30 35 40

50

40

30

20

10

0

mV/°C

−10

−20

−30

−40

−50

%/°C

0.10

0.08

0.06

0.04

0.02

−0.02

−0.04

−0.06

−0.08

−0.10

0

444

RKZ-KG Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer

Features • These diodes are delivered taped. • Lineup of environmental friendly Halogen free type (RKZ-KG-P6 Series 6:Pb free & Halogen free).


Cathode mark

Mark

1 2

1. Cathode

2. Anode

2•0

RKZ-KG Series

Package Name : URP




RKZ-KG P6 Series (Halogen-free type)



RKZ-KG Series

445


Zener Voltage Reverse Current Dynamic Resistance ESD-Capability *2

VZ (V) *1 Test



Condition — (kV) *2 Part No. Min Max IZ (mA) Max VR (V) Max IZ (mA) Min

RKZ2.0BKG 1.90 2.20 5 120 0.5 100 5 30 RKZ2.2BKG 2.10 2.40 5 120 0.7 100 5 30 RKZ2.4BKG 2.30 2.60 5 120 1.0 100 5 30 RKZ2.7B2KG 2.65 2.90 5 120 1.0 110 5 30 RKZ3.0B2KG 2.95 3.20 5 50 1.0 120 5 30 RKZ3.3B2KG 3.25 3.50 5 20 1.0 130 5 30 RKZ3.6B2KG 3.55 3.80 5 10 1.0 130 5 30 RKZ3.9B2KG 3.87 4.10 5 10 1.0 130 5 30 RKZ4.3B2KG 4.15 4.34 5 10 1.0 130 5 30 RKZ4.7B2KG 4.55 4.75 5 10 1.0 130 5 30 RKZ5.1B2KG 4.98 5.20 5 5 1.5 130 5 30 RKZ5.6B2KG 5.49 5.73 5 5 2.5 80 5 30 RKZ6.2B2KG 6.06 6.33 5 2 3.0 50 5 30 RKZ6.8B2KG 6.65 6.93 5 2 3.5 30 5 30 RKZ7.5B2KG 7.28 7.60 5 2 4.0 30 5 30 RKZ8.2B2KG 8.02 8.36 5 2 5.0 30 5 30 RKZ9.1B2KG 8.85 9.23 5 2 6.0 30 5 30 RKZ10B2KG 9.77 10.21 5 2 7.0 30 5 30 RKZ11B2KG 10.76 11.22 5 2 8.0 30 5 30 RKZ12B2KG 11.74 12.24 5 2 9.0 35 5 30 RKZ13B2KG 12.91 13.49 5 2 10.0 35 5 30 RKZ15B2KG 14.34 14.98 5 2 11.0 40 5 25 RKZ16B2KG 15.85 16.51 5 2 12.0 40 5 25 RKZ18B2KG 17.56 18.35 5 2 13.0 45 5 25 RKZ20B2KG 19.52 20.39 5 2 15.0 50 5 20 RKZ22B2KG 21.54 22.47 5 2 17.0 55 5 20 RKZ24B2KG 23.72 24.78 5 2 19.0 60 5 15 RKZ27BKG 25.10 28.90 2 2 21.0 70 2 15 RKZ30BKG 28.00 32.00 2 2 23.0 80 2 13 RKZ33BKG 31.00 35.00 2 2 25.0 80 2 8 RKZ36BKG 34.00 38.00 2 2 27.0 90 2 8 Notes: 1. Tested with pulse (Pw = 40 ms).

2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec

RKZ-KG Series

446

Mark Code Part No. Mark No. Part No. Mark No.

RKZ2.0BKG 2 • 0 RKZ9.1B2KG 9 • 1 RKZ2.2BKG 2 • 2 RKZ10B2KG 1 0 • RKZ2.4BKG 2 • 4 RKZ11B2KG 1 1 • RKZ2.7B2KG 2 • 7 RKZ12B2KG 1 2 • RKZ3.0B2KG 3 • 0 RKZ13B2KG 1 3 • RKZ3.3B2KG 3 • 3 RKZ15B2KG 1 5 • RKZ3.6B2KG 3 • 6 RKZ16B2KG 1 6 • RKZ3.9B2KG 3 • 9 RKZ18B2KG 1 8 • RKZ4.3B2KG 4 • 3 RKZ20B2KG 2 0 • RKZ4.7B2KG 4 • 7 RKZ22B2KG 2 2 • RKZ5.1B2KG 5 • 1 RKZ24B2KG 2 4 • RKZ5.6B2KG 5 • 6 RKZ27BKG 2 7 • RKZ6.2B2KG 6 • 2 RKZ30BKG 3 0 • RKZ6.8B2KG 6 • 8 RKZ33BKG 3 3 • RKZ7.5B2KG 7 • 5 RKZ36BKG 3 6 • RKZ8.2B2KG 8 • 2 Note: Example of Marking

RKZ2.0BKG RKZ10B2KG

2•0 10•

RKZ-KG Series

447


250

200

150

100

50

200150100500

0

Po

we

r D

issip

atio

n

Pd

(

mW

)



Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(

%/°

C)

Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(m

V/°

C)

Ze

ne

r C

urr

en

t

I Z

(m

A)

50

40

30

20

10

0

-10

-20

-30

-40

-50

0.08

0.06

0.04

0.02

-0.02

-0.04

-0.06

-0.08

-0.10

0

Polyimide board

3.0

0.8

1.5

20hx15wx0.8t

1.5

unit: mm

10

8

6

4

2

0



40 8 12 16 20 24 28 32 4036

RK

Z33B

KG

RK

Z30B

KG

RK

Z27B

KG



RK

Z22B

2K

G

RK

Z24B

2K

G

RK

Z2

.0B

KG

RK

Z6

.2B

2K

G

RK

Z2

0B

2K

G

RK

Z36B

KG

mV/°C

%/°C

RK

Z1

8B

2K

G

RK

Z3

.0B

2K

G

RK

Z3

.6B

2K

GR

KZ

4.3

B2

KG

RK

Z5

.1B

2K

G

RK

Z7

.5B

2K

GR

KZ

8.2

B2

KG

RK

Z9

.1B

2K

GR

KZ

10

B2

KG

RK

Z1

3B

2K

G

RK

Z1

6B

2K

G

RK

Z1

2B

2K

GR

KZ

11

B2

KG

RK

Z1

5B

2K

G

RK

Z2

.4B

KG

RK

Z6

.8B

2K

G

0 5 10 15 20 25 30 35 40

0.10

RKZ-KG Series

448

Fig.4 Surge Reverse Power Ratings(Reference data)

Time t (s)

Nonre

petitive S

urg

e R

evers

es P

ow

er

P

RS

M (

W)

1.01.0

10

100

100.1 1000

RKZ5.6B2KG

RKZ3.9B2KG

RKZ15B2KG

t

PRSM


449

RKZ-KJ Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer

Features • Emboss Taping Reel Pack.


1. Cathode

2. Anode




Package Name : UFP

RKZ-KJ Series


Cathode mark

Mark

1 22 0•



RKZ-KJ Series

450



VZ (V) *1 Test




RKZ2.0BKJ 1.90 2.20 5 120 0.5 100 5 30 RKZ2.2BKJ 2.10 2.40 5 120 0.7 100 5 30 RKZ2.4BKJ 2.30 2.60 5 120 1.0 100 5 30 RKZ2.7B2KJ 2.65 2.90 5 120 1.0 110 5 30 RKZ3.0B2KJ 2.95 3.20 5 50 1.0 120 5 30 RKZ3.3B2KJ 3.25 3.50 5 20 1.0 130 5 30 RKZ3.6B2KJ 3.55 3.80 5 10 1.0 130 5 30 RKZ3.9B2KJ 3.87 4.10 5 10 1.0 130 5 30 RKZ4.3B2KJ 4.15 4.34 5 10 1.0 130 5 30 RKZ4.7B2KJ 4.55 4.75 5 10 1.0 130 5 30 RKZ5.1B2KJ 4.98 5.20 5 5 1.5 130 5 30 RKZ5.6B2KJ 5.49 5.73 5 5 2.5 80 5 30 RKZ6.2B2KJ 6.06 6.33 5 2 3.0 50 5 30 RKZ6.8B2KJ 6.65 6.93 5 2 3.5 30 5 30 RKZ7.5B2KJ 7.28 7.60 5 2 4.0 30 5 30 RKZ8.2B2KJ 8.02 8.36 5 2 5.0 30 5 30 RKZ9.1B2KJ 8.85 9.23 5 2 6.0 30 5 30 RKZ10B2KJ 9.77 10.21 5 2 7.0 30 5 30 RKZ11B2KJ 10.76 11.22 5 2 8.0 30 5 30 RKZ12B2KJ 11.74 12.24 5 2 9.0 35 5 30 RKZ13B2KJ 12.91 13.49 5 2 10.0 35 5 30 RKZ15B2KJ 14.34 14.98 5 2 11.0 40 5 25 RKZ16B2KJ 15.85 16.51 5 2 12.0 40 5 25 RKZ18B2KJ 17.56 18.35 5 2 13.0 45 5 25 RKZ20B2KJ 19.52 20.39 5 2 15.0 50 5 20 RKZ22B2KJ 21.54 22.47 5 2 17.0 55 5 20 RKZ24B2KJ 23.72 24.78 5 2 19.0 60 5 15 RKZ27BKJ 25.10 28.90 2 2 21.0 70 2 15 RKZ30BKJ 28.00 32.00 2 2 23.0 80 2 13 RKZ33BKJ 31.00 35.00 2 2 25.0 80 2 8 RKZ36BKJ 34.00 38.00 2 2 27.0 90 2 8 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse

Failure criterion ; According to IR spec 3. The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is considered as


RKZ-KJ Series

451


RKZ2.0BKJ 2 • 0 RKZ9.1B2KJ 9 • 1 RKZ2.2BKJ 2 • 2 RKZ10B2KJ 1 0 • RKZ2.4BKJ 2 • 4 RKZ11B2KJ 1 1 • RKZ2.7B2KJ 2 • 7 RKZ12B2KJ 1 2 • RKZ3.0B2KJ 3 • 0 RKZ13B2KJ 1 3 • RKZ3.3B2KJ 3 • 3 RKZ15B2KJ 1 5 • RKZ3.6B2KJ 3 • 6 RKZ16B2KJ 1 6 • RKZ3.9B2KJ 3 • 9 RKZ18B2KJ 1 8 • RKZ4.3B2KJ 4 • 3 RKZ20B2KJ 2 0 • RKZ4.7B2KJ 4 • 7 RKZ22B2KJ 2 2 • RKZ5.1B2KJ 5 • 1 RKZ24B2KJ 2 4 • RKZ5.6B2KJ 5 • 6 RKZ27BKJ 2 7 • RKZ6.2B2KJ 6 • 2 RKZ30BKJ 3 0 • RKZ6.8B2KJ 6 • 8 RKZ33BKJ 3 3 • RKZ7.5B2KJ 7 • 5 RKZ36BKJ 3 6 • RKZ8.2B2KJ 8 • 2 Note: Example of Marking

RKZ10B2KJ

2•0

RKZ2.0BKJ

10•

RKZ-KJ Series

452


250

200

150

100

50

200150100500

0

Po

we

r D

issip

atio

n

Pd

(

mW

)



Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(

%/°

C)

Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(m

V/°

C)

0 5 10 15 20

50

40

30

20

10

0

-10

-20

-30

-40

-50

0.10

0.08

0.06

0.04

0.02

-0.02

-0.04

-0.06

-0.08

-0.10

0

Polyimide board

3.0

0.8

1.5

20hx15wx0.8t

1.5

unit: mm

10

8

6

4

2

0



40 8 12 16 20 24 28 32 4036

RK

Z1

8B

2K

J

RK

Z3

.0B

2K

J

RK

Z3

.6B

2K

JR

KZ

4.3

B2

KJ

RK

Z5

.1B

2K

J

RK

Z7

.5B

2K

JR

KZ

8.2

B2

KJ

RK

Z9

.1B

2K

JR

KZ

10

B2

KJ

RK

Z1

3B

2K

J

RK

Z1

6B

2K

J

RK

Z33B

KJ

RK

Z30B

KJ

RK

Z27B

KJ

RK

Z1

2B

2K

J

Ze

ne

r C

urr

en

t

I Z

(m

A)



RK

Z22B

2K

J

RK

Z1

1B

2K

J

RK

Z1

5B

2K

J

RK

Z24B

2K

J

RK

Z2

.0B

KJ

RK

Z2

.4B

KJ

RK

Z6

.8B

2K

JR

KZ

6.2

B2

KJ

RK

Z2

0B

2K

J

RK

Z36B

KJ

mV/°C

%/°C

25 30 35 40

RKZ-KJ Series

453

Fig.4 Surge Reverse Power Ratings(Reference data)

Time t (ms)

Nonre

petitive S

urg

e R

evers

es P

ow

er

P

RS

M (

W)

1.01.0

10

100

100.1 1000

RKZ5.6B2KJ

RKZ3.9B2KJ

RKZ15B2KJ

t

PRSM


RKZ36BKJ

454

RKZ-KK Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer



Cathode mark

Mark

1. Cathode

2. Anode

1 2C1

RKZ-KK Series

Package Name : SFP






RKZ-KK Series

455



VZ (V) *1 Test




RKZ2.0BKK 1.90 2.20 5 120 0.5 100 5 30 RKZ2.2BKK 2.10 2.40 5 120 0.7 100 5 30 RKZ2.4BKK 2.30 2.60 5 120 1.0 100 5 30 RKZ2.7B2KK 2.65 2.90 5 120 1.0 110 5 30 RKZ3.0B2KK 2.95 3.20 5 50 1.0 120 5 30 RKZ3.3B2KK 3.25 3.50 5 20 1.0 130 5 30 RKZ3.6B2KK 3.55 3.80 5 10 1.0 130 5 30 RKZ3.9B2KK 3.87 4.10 5 10 1.0 130 5 30 RKZ4.3B2KK 4.15 4.34 5 10 1.0 130 5 30 RKZ4.7B2KK 4.55 4.75 5 10 1.0 130 5 30 RKZ5.1B2KK 4.98 5.20 5 5 1.5 130 5 30 RKZ5.6B2KK 5.49 5.73 5 5 2.5 80 5 30 RKZ6.2B2KK 6.06 6.33 5 2 3.0 50 5 30 RKZ6.8B2KK 6.65 6.93 5 2 3.5 30 5 30 RKZ7.5B2KK 7.28 7.60 5 2 4.0 30 5 30 RKZ8.2B2KK 8.02 8.36 5 2 5.0 30 5 30 RKZ9.1B2KK 8.85 9.23 5 2 6.0 30 5 30 RKZ10B2KK 9.77 10.21 5 2 7.0 30 5 30 RKZ11B2KK 10.76 11.22 5 2 8.0 30 5 30 RKZ12B2KK 11.74 12.24 5 2 9.0 35 5 30 RKZ13B2KK 12.91 13.49 5 2 10.0 35 5 30 RKZ15B2KK 14.34 14.98 5 2 11.0 40 5 25 RKZ16B2KK 15.85 16.51 5 2 12.0 40 5 25 RKZ18B2KK 17.56 18.35 5 2 13.0 45 5 25 RKZ20B2KK 19.52 20.39 5 2 15.0 50 5 20 RKZ22B2KK 21.54 22.47 5 2 17.0 55 5 20 RKZ24B2KK 23.72 24.78 5 2 19.0 60 5 15 RKZ27BKK 25.10 28.90 2 2 21.0 70 2 15 RKZ30BKK 28.00 32.00 2 2 23.0 80 2 13 RKZ33BKK 31.00 35.00 2 2 25.0 80 2 8 RKZ36BKK 34.00 38.00 2 2 27.0 90 2 8 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse

Failure criterion ; According to IR spec 3. The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is considered as


RKZ-KK Series

456


RKZ2.0BKK C1 RKZ9.1B2KK G3 RKZ2.2BKK C2 RKZ10B2KK G6 RKZ2.4BKK C3 RKZ11B2KK G9 RKZ2.7B2KK C5 RKZ12B2KK J3 RKZ3.0B2KK C7 RKZ13B2KK J6 RKZ3.3B2KK C9 RKZ15B2KK J9 RKZ3.6B2KK D2 RKZ16B2KK M3 RKZ3.9B2KK D4 RKZ18B2KK M6 RKZ4.3B2KK D6 RKZ20B2KK M9 RKZ4.7B2KK D9 RKZ22B2KK P3 RKZ5.1B2KK E3 RKZ24B2KK P6 RKZ5.6B2KK E6 RKZ27BKK P8 RKZ6.2B2KK E9 RKZ30BKK P9 RKZ6.8B2KK F3 RKZ33BKK N4 RKZ7.5B2KK F6 RKZ36BKK N5 RKZ8.2B2KK F9 Note: Example of Marking

N5

RKZ36BKK

C1

RKZ2.0BKK

RKZ-KK Series

457


Zener

Curr

ent I Z

(

mA

)

10

8

6

4

2

040 8 12 16 20 24 28 32 4036

RK

Z1

8B

2K

K

RK

Z3.0

B2

KK

RK

Z3.6

B2K

KR

KZ

4.3

B2K

KR

KZ

5.1

B2K

K

RK

Z7.5

B2K

KR

KZ

8.2

B2K

KR

KZ

9.1

B2K

KR

KZ

10

B2

KK

RK

Z1

3B

2K

K

RK

Z1

6B

2K

K

RK

Z33B

KK

RK

Z30B

KK

RK

Z27B

KK

RK

Z1

2B

2K

K



RK

Z22B

2K

K

RK

Z1

1B

2K

K

RK

Z1

5B

2K

K

RK

Z24B

2K

K

RK

Z2.0

BK

KR

KZ

2.4

BK

K

RK

Z6.8

B2K

KR

KZ

6.2

B2K

K

RK

Z2

0B

2K

K

RK

Z36B

KK

250

200

150

100

50

200150100500

0

Pow

er

Dis

sip

ation P

d (

mW

)



Zener

Voltage

Tem

pera

ture

Coeffic

ient γ Z

(

%/°

C)

Zener

Voltage

Tem

pera

ture

Coeffic

ient γ Z

(m

V/°

C)

0 5 10 15 20

50

40

30

20

10

0

-10

-20

-30

-40

-50

0.10

0.08

0.06

0.04

0.02

-0.02

-0.04

-0.06

-0.08

-0.10

0

Polyimide board

3.0

0.8

1.5

20hx15wx0.8t

1.5

unit: mm



mV/°C

%/°C

25 30 35 40

458

RKZ-KL Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer



1 2C1

Cathode mark

MarkPackage Code: PXSF0002ZA-A

RKZ-KL Sirees


R (10,000 pcs / reel)

Package Name : EFP



RKZ-KL Series

459



VZ (V) *1 Test




RKZ2.0BKL 1.90 2.20 5 120 0.5 100 5 30 RKZ2.2BKL 2.10 2.40 5 120 0.7 100 5 30 RKZ2.4BKL 2.30 2.60 5 120 1.0 100 5 30 RKZ2.7B2KL 2.65 2.90 5 120 1.0 110 5 30 RKZ3.0B2KL 2.95 3.20 5 50 1.0 120 5 30 RKZ3.3B2KL 3.25 3.50 5 20 1.0 130 5 30 RKZ3.6B2KL 3.55 3.80 5 10 1.0 130 5 30 RKZ3.9B2KL 3.87 4.10 5 10 1.0 130 5 30 RKZ4.3B2KL 4.15 4.34 5 10 1.0 130 5 30 RKZ4.7B2KL 4.55 4.75 5 10 1.0 130 5 30 RKZ5.1B2KL 4.98 5.20 5 5 1.5 130 5 30 RKZ5.6B2KL 5.49 5.73 5 5 2.5 80 5 30 RKZ6.2B2KL 6.06 6.33 5 2 3.0 50 5 30 RKZ6.8B2KL 6.65 6.93 5 2 3.5 30 5 30 RKZ7.5B2KL 7.28 7.60 5 2 4.0 30 5 30 RKZ8.2B2KL 8.02 8.36 5 2 5.0 30 5 30 RKZ9.1B2KL 8.85 9.23 5 2 6.0 30 5 30 RKZ10B2KL 9.77 10.21 5 2 7.0 30 5 30 RKZ11B2KL 10.76 11.22 5 2 8.0 30 5 30 RKZ12B2KL 11.74 12.24 5 2 9.0 35 5 30 RKZ13B2KL 12.91 13.49 5 2 10.0 35 5 30 RKZ15B2KL 14.34 14.98 5 2 11.0 40 5 25 RKZ16B2KL 15.85 16.51 5 2 12.0 40 5 25 RKZ18B2KL 17.56 18.35 2 2 13.0 45 2 25 RKZ20B2KL 19.52 20.39 2 2 15.0 50 2 20 RKZ22B2KL 21.54 22.47 2 2 17.0 55 2 20 RKZ24B2KL 23.72 24.78 2 2 19.0 60 2 15 RKZ27BKL 25.10 28.90 2 2 21.0 70 2 15 RKZ30BKL 28.00 32.00 2 2 23.0 80 2 13 RKZ33BKL 31.00 35.00 2 2 25.0 80 2 8 RKZ36BKL 34.00 38.00 2 2 27.0 90 2 8 Notes: 1. Tested with pulse (Pw = 40 ms).

2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec

3. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature.

RKZ-KL Series

460


RKZ2.0BKL C1 RKZ9.1B2KL G3 RKZ2.2BKL C2 RKZ10B2KL G6 RKZ2.4BKL C3 RKZ11B2KL G9 RKZ2.7B2KL C5 RKZ12B2KL J3 RKZ3.0B2KL C7 RKZ13B2KL J6 RKZ3.3B2KL C9 RKZ15B2KL J9 RKZ3.6B2KL D2 RKZ16B2KL M3 RKZ3.9B2KL D4 RKZ18B2KL M6 RKZ4.3B2KL D6 RKZ20B2KL M9 RKZ4.7B2KL D9 RKZ22B2KL P3 RKZ5.1B2KL E3 RKZ24B2KL P6 RKZ5.6B2KL E6 RKZ27BKL P8 RKZ6.2B2KL E9 RKZ30BKL P9 RKZ6.8B2KL F3 RKZ33BKL N4 RKZ7.5B2KL F6 RKZ36BKL N5 RKZ8.2B2KL F9 Note: Example of Marking

N5

RKZ36BKL

C1

RKZ2.0BKL

RKZ-KL Series

461


250

200

150

100

50

200150100500

0

Po

we

r D

issip

atio

n

Pd

(

mW

)



Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(

%/°

C)

Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(m

V/°

C)

Ze

ne

r C

urr

en

t

I Z

(m

A)

50

40

30

20

10

0

-10

-20

-30

-40

-50

0.10

0.08

0.06

0.04

0.02

-0.02

-0.04

-0.06

-0.08

-0.10

0

Polyimide board

3.0

0.8

1.5

20hx15wx0.8t

1.5

unit: mm

10

8

6

4

2

0



40 8 12 16 20 24 28 32 4036

RK

Z33B

KL

RK

Z30B

KL

RK

Z27B

KL



RK

Z22B

2K

L

RK

Z24B

2K

L

RK

Z2

.0B

KL

RK

Z6

.2B

2K

L

RK

Z2

0B

2K

L

RK

Z36B

KL

mV/°C

%/°C

RK

Z1

8B

2K

L

RK

Z3

.0B

2K

L

RK

Z3

.6B

2K

LR

KZ

4.3

B2

KL

RK

Z5

.1B

2K

L

RK

Z7

.5B

2K

LR

KZ

8.2

B2

KL

RK

Z9

.1B

2K

LR

KZ

10

B2

KL

RK

Z1

3B

2K

L

RK

Z1

6B

2K

L

RK

Z1

2B

2K

LR

KZ

11

B2

KL

RK

Z1

5B

2K

L

RK

Z2.4

BK

L

RK

Z6

.8B

2K

L

0 5 10 15 20 25 30 35 40

462

HZ-L Series Silicon Planar Zener Diode for Low Noise Application

Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide flexible application.


1. Cathode

2. Anode

7B 2

Part No.

1 2Body color is orange


HZ-L Series






HZ-L Series

463



VZ (V) *1 Test



ConditionPart No. Min Max IZ (mA) Max VR (V) Max IZ (mA)

HZ6A1L 5.2 5.5 HZ6A2L 5.3 5.6 HZ6A3L 5.4 5.7

0.5 1 2.0 150 0.5

HZ6B1L 5.5 5.8 HZ6B2L 5.6 5.9 HZ6B3L 5.7 6.0

0.5 1 2.0 80 0.5

HZ6C1L 5.8 6.1 HZ6C2L 6.0 6.3 HZ6C3L 6.1 6.4

0.5 1 2.0 60 0.5

HZ7A1L 6.3 6.6 HZ7A2L 6.4 6.7 HZ7A3L 6.6 6.9 HZ7B1L 6.7 7.0 HZ7B2L 6.9 7.2 HZ7B3L 7.0 7.3 HZ7C1L 7.2 7.6 HZ7C2L 7.3 7.7 HZ7C3L 7.5 7.9

0.5 1 3.5 60 0.5


0.5 1 6.0 60 0.5


0.5 1 8.0 80 0.5


HZ-L Series

464


VZ (V) *1 Test





0.5 1 10.5 80 0.5

HZ15-1L 14.1 14.7 HZ15-2L 14.5 15.1 HZ15-3L 14.9 15.5

0.5 1 13.0 80 0.5

HZ16-1L 15.3 15.9 HZ16-2L 15.7 16.5 HZ16-3L 16.3 17.1

0.5 1 14.0 80 0.5

HZ18-1L 16.9 17.7 HZ18-2L 17.5 18.3 HZ18-3L 18.1 19.0

0.5 1 15.0 80 0.5

HZ20-1L 18.8 19.7 HZ20-2L 19.5 20.4 HZ20-3L 20.2 21.1

0.5 1 18.0 100 0.5

HZ22-1L 20.9 21.9 HZ22-2L 21.6 22.6 HZ22-3L 22.3 23.3

0.5 1 20.0 100 0.5

HZ24-1L 22.9 24.0 HZ24-2L 23.6 24.7 HZ24-3L 24.3 25.5

0.5 1 22.0 120 0.5

HZ27-1L 25.2 26.6 HZ27-2L 26.2 27.6 HZ27-3L 27.2 28.6

0.5 1 24.0 150 0.5

HZ30-1L 28.2 29.6 HZ30-2L 29.2 30.6 HZ30-3L 30.2 31.6

0.5 1 27.0 200 0.5

HZ33-1L 31.2 32.6 HZ33-2L 32.2 33.6 HZ33-3L 33.2 34.6

0.5 1 30.0 250 0.5

HZ36-1L 34.2 35.7 HZ36-2L 35.3 36.8 HZ36-3L 36.4 38.0

0.5 1 33.0 300 0.5


HZ-L Series

465


5 10 15 20 25 30 35 400

HZ

6B

2L

HZ

16

-2L

HZ

9B

2L

HZ

12

B2

L

HZ

20

-1L

HZ

24

-2L

HZ

30

-2L

HZ

36

-2L

Ze

ne

r C

urr

en

t

I Z

(A

)

10−5

10−6

10−4

10−3

10−2

10−7

10−8



0 5 10 15 20 25 30 35 40

%/°C

mV/°C

500

400

300

200

100

200150100500

0

2.5 mm

3 mm


100 180 1.6t mm


× ×

l

l = 10 mm

l = 5 mm

Po

we

r D

issip

atio

n

Pd

(

mW

)


0.10

0.08

0.06

0.04

0.02

−0.02

−0.04

−0.06

−0.08

−0.10Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(

%/°

C)

0



50

40

30

20

10

0

−10

−20

−30

−40

−50 Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t γ Z

(

mV

/°C

)



466

HZ-LL Series Silicon Planar Zener Diode for Hard Knee Low Noise

Features • VZ-IZ characteristics are semi logarithmic linear from IZ = 1 nA to 1 mA and have sharper breakdown knees in a low

current region, and also lower VZ temperature coefficients. • Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners).


1. Cathode

2. Anode

HZ-LL Series




2A

Cathode band(Navy blue)Part No.

1 2Body color is Verdure


tem Symbol Value Unit Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C

Electrical Characteristics

(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance Linearity*3

VZ(V) *1 IR (nA) ZZT (Ω) ZZK (Ω)*2 ∆VZ1 (V) ∆VZ2(V)Part No. Min Max IZ (mA) Max VR (V) Max IZT (mA) Typ IZK (µA) Max Max

HZ2ALL 1.6 2.0 HZ2BLL 1.9 2.3 HZ2CLL 2.2 2.6

0.5 100 0.5 350 0.5 (1.2) 50 0.5 0.6


0.5 100 1.0 360 0.5 (1.2) 50 0.5 0.6


0.5 100 2.0 370 0.5 (1.5) 50 0.5 0.6


0.5 100 3.0 380 0.5 (1.5) 50 0.5 0.6

Notes: 1. Tested with DC. 2. Reference only. 3. ∆VZ1 = VZ (IZ = 0.5 mA) – VZ1 (Iz = 0.05 mA) ∆VZ2 = VZ1 (IZ = 0.05 mA) – VZ2 (Iz = 0.001 mA)

HZ-LL Series

467


0 1 2 3 4 5 6 7 8

HZ

3B

LL

HZ

4B

LL

HZ

5B

LL

HZ

2B

LL

1 2 3 4 5 6

-0.5

-1.0

-1.5

0

-2.0

%/°CmV/°C

250

200

150

100

50

200150100500

0

2.5 mm

3 mm

5mm

10–5

10–6

10–4

10–3

10–2

10–10

10–9

10–8

10–7

-0.02

-0.03

-0.04

-0.01

-0.05 Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t

γ Z (

mV

/°C

)


Zener Voltage VZ (V)Z

en

er

Vo

lta

ge

Te

mp

era

ture

Co

effic

ien

t

γ Z (

%/°

C)


100 × 180×1.6t mm


Po

we

r D

issip

atio

n P

d (

mW

)





Ze

ne

r C

urr

en

t I Z

(

A)

468

HZS-L Series Silicon Planar Zener Diode for Low Noise Application

Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed automatic insertion.


1. Cathode

2. Anode

HZS-L Series



TA (5,000 pcs / reel) Part No.

1 2

B

2

7

Cathode band (Black)



HZS-L Series

469



VZ (V) *1 Test




HZS6A1L 5.2 5.5 HZS6A2L 5.3 5.6 HZS6A3L 5.4 5.7

0.5 1 2.0 150 0.5

HZS6B1L 5.5 5.8 HZS6B2L 5.6 5.9 HZS6B3L 5.7 6.0

0.5 1 2.0 80 0.5

HZS6C1L 5.8 6.1 HZS6C2L 6.0 6.3 HZS6C3L 6.1 6.4

0.5 1 2.0 60 0.5

HZS7A1L 6.3 6.6 HZS7A2L 6.4 6.7 HZS7A3L 6.6 6.9 HZS7B1L 6.7 7.0 HZS7B2L 6.9 7.2 HZS7B3L 7.0 7.3 HZS7C1L 7.2 7.6 HZS7C2L 7.3 7.7 HZS7C3L 7.5 7.9

0.5 1 3.5 60 0.5


0.5 1 6.0 60 0.5


0.5 1 8.0 80 0.5


0.5 1 10.5 80 0.5


HZS-L Series

470


VZ (V) *1 Test




HZS15-1L 14.1 14.7 HZS15-2L 14.5 15.1 HZS15-3L 14.9 15.5

0.5 1 13.0 80 0.5

HZS16-1L 15.3 15.9 HZS16-2L 15.7 16.5 HZS16-3L 16.3 17.1

0.5 1 14.0 80 0.5

HZS18-1L 16.9 17.7 HZS18-2L 17.5 18.3 HZS18-3L 18.1 19.0

0.5 1 15.0 80 0.5

HZS20-1L 18.8 19.7 HZS20-2L 19.5 20.4 HZS20-3L 20.2 21.1

0.5 1 18.0 100 0.5

HZS22-1L 20.9 21.9 HZS22-2L 21.6 22.6 HZS22-3L 22.3 23.3

0.5 1 20.0 100 0.5

HZS24-1L 22.9 24.0 HZS24-2L 23.6 24.7 HZS24-3L 24.3 25.5

0.5 1 22.0 120 0.5

HZS27-1L 25.2 26.6 HZS27-2L 26.2 27.6 HZS27-3L 27.2 28.6

0.5 1 24.0 150 0.5

HZS30-1L 28.2 29.6 HZS30-2L 29.2 30.6 HZS30-3L 30.2 31.6

0.5 1 27.0 200 0.5

HZS33-1L 31.2 32.6 HZS33-2L 32.2 33.6 HZS33-3L 33.2 34.6

0.5 1 30.0 250 0.5

HZS36-1L 34.2 35.7 HZS36-2L 35.3 36.8 HZS36-3L 36.4 38.0

0.5 1 33.0 300 0.5


HZS-L Series

471


0 5 10 15 20 25 30 35 40

50

40

30

20

10

0

−10

−20

−30

−40

−50

5 10 15 20 25 30 35 400

200150100500

2.5 mm

3 mm

l

l = 5 mm


HZ

S6

B2

L

HZ

S1

6-2

L

HZ

S9

B2

L

HZ

S1

2B

2L

HZ

S2

0-2

L

HZ

S2

4-2

L

HZ

S3

0-2

L

HZ

S3

6-2

L

Zener

Curr

ent I Z

(

A)

10−5

10−6

10−4

10−3

10−2

10−7

10−8



Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t

γ Z (

mV

/°C

)

%/°C

mV/°C



0.10

0.08

0.06

0.04

0.02

−0.02

−0.04

−0.06

−0.08

−0.10Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t

γ Z (

%/°

C) 500

400

300

200

100

0

Pow

er

Dis

sip

ation P

d (

mW

)


100 × 180 × 1.6t mm

Quality: paper phenol



0

472

HZS-LL Series Silicon Planar Zener Diode for Hard Knee Low Noise

Features • Vz-Iz characteristics are semilogarithmic linear from IZ = 1 nA to 1 mA and have sharper breakdown knees in a low

current region, and also lower VZ temperature coefficients. • Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners). • Suitable for 5 mm-pitch high speed automatic insertion.


1. Cathode

2. Anode

HZS-LL Series




2

Part No.

1

2A

Cathode band (Navy blue)


tem Symbol Value Unit Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C

HZS-LL Series

473



VZ(V) *1 IR (nA) ZZT (Ω) ZZK (Ω)*2 ΔVZ1 (V) ΔVZ2(V)Part No. Min Max IZ (mA) Max VR (V) Max IZT (mA) Typ IZK (μA) Max Max

HZS2ALL 1.6 2.0 HZS2BLL 1.9 2.3 HZS2CLL 2.2 2.6

0.5 100 0.5 350 0.5 (1.2) 50 0.5 0.6


0.5 100 1.0 360 0.5 (1.2) 50 0.5 0.6


0.5 100 2.0 370 0.5 (1.5) 50 0.5 0.6


0.5 100 3.0 380 0.5 (1.5) 50 0.5 0.6

Notes: 1. Tested with DC. 2. Reference only. 3. ΔVZ1 = VZ (IZ = 0.5 mA) – VZ1 (Iz = 0.05 mA) ΔVZ2 = VZ1 (IZ = 0.05 mA) – VZ2 (Iz = 0.001 mA)

HZS-LL Series

474


1 2 3 4 5 6

-0.5

-1.0

-1.5

-0.02

-0.03

-0.04

-0.01

-0.05

0

-2.0

250

200

150

100

50

200150100500

0

2.5 mm

3 mm

5mm

0 1 2 3 4 5 6 7 8

HZ

S3B

LL

HZ

S4B

LL

HZ

S5B

LL

HZ

S2B

LL

Po

we

r D

issip

atio

n P

d (

mW

)




100 × 180 × 1.6t mm

Quality: paper phenol

10–5

10–6

10–4

10–3

10–2

10–10

10–9

10–8

10–7

%/°CmV/°C



Ze

ne

r C

urr

en

t I Z

(

A)

Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t

γ Z (

mV

/°C

)


Zener Voltage VZ (V)Z

en

er

Vo

lta

ge

Te

mp

era

ture

Co

effic

ien

t

γ Z (

%/°

C)

475

HZK-L Series Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.


1. Cathode

2. Anode

1 2

Cathode band

3rd. band2nd. band

1 2

Cathode band

3rd. band2nd. band

HZK-L Series






Item Symbol Value Unit Power dissipation Pd 400 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C Note: With P.C. Board.

HZK-L Series

476



VZ (V) *1 Test




HZK6AL 5.2 5.7 150 HZK6BL 5.5 6.0 80 HZK6CL 5.8 6.4

0.5 1 2.0

60

0.5

HZK7AL 6.3 6.9 HZK7BL 6.7 7.3 HZK7CL 7.2 7.9

0.5 1 3.5 60 0.5


0.5 1 6.0 60 0.5


0.5 1 8.0 80 0.5


0.5 1 10.5 80 0.5

HZK15L 14.1 15.5 0.5 1 13.0 80 0.5 HZK16L 15.3 17.1 0.5 1 14.0 80 0.5 HZK18L 16.9 19.0 0.5 1 15.0 80 0.5 HZK20L 18.8 21.1 0.5 1 18.0 100 0.5 HZK22L 20.9 23.3 0.5 1 20.0 100 0.5 HZK24L 22.9 25.5 0.5 1 22.0 120 0.5 HZK27L 25.2 28.6 0.5 1 24.0 150 0.5 HZK30L 28.2 31.6 0.5 1 27.0 200 0.5 HZK33L 31.2 34.6 0.5 1 30.0 250 0.5 HZK36L 34.2 38.0 0.5 1 33.0 300 0.5 Note: Tested with DC. Type No. is as follows: HZK6AL, HZK6BL, ••• HZK36L.

HZK-L Series

477


HZK6AL Orange Verdure Pink HZK6BL Orange Verdure Verdure HZK6CL Orange Verdure Light Blue HZK7AL Orange Yellow Green Pink HZK7BL Orange Yellow Green Verdure HZK7CL Orange Yellow Green Light Blue HZK9AL Orange Purple Pink HZK9BL Orange Purple Verdure HZK9CL Orange Purple Light Blue HZK11AL Orange Light Blue Pink HZK11BL Orange Light Blue Verdure HZK11CL Orange Light Blue Light Blue HZK12AL Orange White Pink HZK12BL Orange White Verdure HZK12CL Orange White Light Blue HZK15L Yellow Black Pink HZK16L Yellow Yellow Ocher Pink HZK18L Yellow Pink Pink HZK20L Yellow Orange Pink HZK22L Yellow Yellow Pink HZK24L Yellow Verdure Pink HZK27L Yellow Yellow Green Pink HZK30L Yellow Purple Pink HZK33L Yellow Light Blue Pink HZK36L Yellow White Pink HZK30L Yellow Purple Pink HZK33L Yellow Light Blue Pink HZK36L Yellow White Pink

HZK-L Series

478


0 5 10 15 20 25 30 35 40

HZK16L HZK24LHZK7L

HZ

K1

1L

HZ

K1

2L

HZ

K1

5L

HZ

K1

8L

HZ

K2

0L

HZ

K2

7L

HZ

K3

0L

HZ

K3

3L

HZ

K3

6L

HZ

K6

L

HZ

K9

L

HZ

K2

2L

0 5 10 15 20 25 30 35 40

50

40

30

20

10

0

−10

−20

−30

−40

−50

0.10

0.08

0.06

0.04

0.02

0

−0.02

−0.04

−0.06

−0.08

−0.10

%/°C

mV/°C

500

400

300

200

100

200150100500

0

2.5mm

3mm


15 × 20 × 1.6t mm




Po

we

r D

issip

atio

n

Pd

(

mW

)

10–5

10–6

10–4

10–3

10–2



Ze

ne

r C

urr

en

t

I Z (

A)

Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t

γ Z (

mV

/°C

)

Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t

γ Z (

%/°

C)



479

HZK-LL Series Silicon Planar Zener Diode for Hard Knee Low Noise

Features • Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners).


1. Cathode

2. Anode

1 2

Cathode band

3rd. band2nd. band

1 2

Cathode band

3rd. band2nd. band

HZK-LL Series






Item Symbol Value Unit Power dissipation Pd * 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C Note: With P.C. Board.

HZK-LL Series

480



VZ(V) *1 IR (nA) ZZT (Ω) ZZK (Ω)*2 ΔVZ1 (V) ΔVZ2(V)Part No. Min Max IZ (mA) Max VR (V) Max IZT (mA) Typ IZK (μA) Max Max

HZK2ALL 1.6 2.0 HZK2BLL 1.9 2.3 HZK2CLL 2.2 2.6

0.5 100 0.5 350 0.5 (1.2) 50 0.5 0.6


0.5 100 1.0 360 0.5 (1.2) 50 0.5 0.6


0.5 100 2.0 370 0.5 (1.5) 50 0.5 0.6


0.5 100 3.0 380 0.5 (1.5) 50 0.5 0.6

Notes: 1. Tested with DC. 2. Reference only. 3. ΔVZ1 = VZ (IZ = 0.5 mA) – VZ1 (Iz = 0.05 mA) ΔVZ2 = VZ1 (IZ = 0.05 mA) – VZ2 (Iz = 0.001 mA)


HZK2ALL Verdure Yellow Ocher Pink HZK2BLL Verdure Yellow Ocher Blue HZK2CLL Verdure Yellow Ocher Light Blue HZK3ALL Verdure Pink Pink HZK3BLL Verdure Pink Blue HZK3CLL Verdure Pink Light Blue HZK4ALL Verdure Orange Pink HZK4BLL Verdure Orange Blue HZK4CLL Verdure Orange Light Blue HZK5ALL Verdure Yellow Pink HZK5BLL Verdure Yellow Blue HZK5CLL Verdure Yellow Light Blue

HZK-LL Series

481


0 1 2 3 4 5 6 7 8

HZ

K2LL

HZ

K3LL

HZ

K4LL

HZ

K5LL

1 2 3 4 5 6

−0.5

−1.0

−1.5

−0.02

−0.03

−0.04

−0.01

−0.05

0

−2.0

250

200

150

100

50

200150100500

0

2.5mm

3mm


15 × 20 × 1.6t mm


%/°CmV/°C

10–6

10–8

10–3

10–4

10–2

10–5

10–7



Zener

Curr

ent I Z

(

A)



Zener

Vo

ltage T

em

pera

ture

Coeffic

ient

γ Z

(

mV

/°C

)

Zener

Voltage T

em

pera

ture

Coeffic

ient

γ Z (

%/°

C)



Pow

er

Dis

sip

ation P

d (

mW

)

482

HZU-L Series Silicon Planar Zener Diode for Low Noise Application

Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.


Cathode mark

Mark

1 2061

1. Cathode

2. Anode

HZU-L Series






HZU-L Series

483



VZ (V) *1 Test



ConditionType Min Max IZ (mA) Max VR (V) Max IZ (mA)

HZU6A1L 5.2 5.5 HZU6A2L 5.3 5.6 HZU6A3L 5.4 5.7

0.5 1 2.0 150 0.5

HZU6B1L 5.5 5.8 HZU6B2L 5.6 5.9 HZU6B3L 5.7 6.0

0.5 1 2.0 80 0.5

HZU6C1L 5.8 6.1 HZU6C2L 6.0 6.3 HZU6C3L 6.1 6.4

0.5 1 2.0 60 0.5

HZU7A1L 6.3 6.6 HZU7A2L 6.4 6.7 HZU7A3L 6.6 6.9 HZU7B1L 6.7 7.0 HZU7B2L 6.9 7.2 HZU7B3L 7.0 7.3 HZU7C1L 7.2 7.6 HZU7C2L 7.3 7.7 HZU7C3L 7.5 7.9

0.5 1 3.5 60 0.5


0.5 1 6.0 60 0.5


0.5 1 8.0 80 0.5


0.5 1 10.5 80 0.5


HZU-L Series

484

Mark Code Part No. Mark No. Part No. Mark No. Part No. Mark No.

HZU6A1L 061 HZU9 A1L 091 HZU12A1L 121 HZU6A2L 062 HZU9 A2L 092 HZU12A2L 122 HZU6A3L 063 HZU9 A3L 093 HZU12A3L 123 HZU6B1L 064 HZU9 B1L 094 HZU12B1L 124 HZU6B2L 065 HZU9 B2L 095 HZU12B2L 125 HZU6B3L 066 HZU9 B3L 096 HZU12B3L 126 HZU6C1L 067 HZU9 C1L 097 HZU12C1L 127 HZU6C2L 068 HZU9 C2L 098 HZU12C2L 128 HZU6C3L 069 HZU9 C3L 099 HZU12C3L 129 HZU7A1L 071 HZU11A1L 111 HZU7A2L 072 HZU11A2L 112 HZU7A3L 073 HZU11A3L 113 HZU7B1L 074 HZU11B1L 114 HZU7B2L 075 HZU11B2L 115 HZU7B3L 076 HZU11B3L 116 HZU7C1L 077 HZU11C1L 117 HZU7C2L 078 HZU11C2L 118 HZU7C3L 079 HZU11C3L 119

HZU-L Series

485


50

40

30

20

10

0

−10

−20

−30

−40

−50

0.10

0.08

0.06

0.04

0.02

0

−0.02

−0.04

−0.06

−0.08

−0.10

250

200

150

100

50

200150100500

0


15 20 1.6t mm

Material: Glass Epoxy Resin

+Cu Foil

× ×

1.5mm 0.8mm

Cu Foil

0.8

mm

Zener

Voltage

Te

mp

era

ture

Co

effic

ien

t γ Z

(

%/°

C)

Zener

Voltage

Te

mp

era

ture

Co

effic

ien

t γ Z

(m

V/°

C)



Pow

er

Dis

sip

ation P

d (

mW

)



Zener

Curr

ent I Z

(

A)

0 5 10 15

mV/°C

%/°C

8 155

HZ

U6

B2

L

HZ

U9

B2

L

HZ

U1

2B

2L

10–4

10–2

10–3

10–5

10–6

10–7

10–8



HZ

U1

1C

2L

HZ

U7

C2

L

HZ

U6

A2

L

HZ

U7

B2

L

HZ

U6

C2

L

HZ

U7

A2

L

6 7 9 10 11 12 13 14

HZ

U9

A2

L

HZ

U9

C2

L

HZ

U1

1A

2L

HZ

U1

1B

2L

HZ

U1

2C

2L

HZ

U1

2A

2L

486

HZU-LL Series Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise

Features • Low noise voltage (approximately 1/3 to 1/10 lower than the HZU series). • Temperature coefficient is approximately 1/2 lower than the HZU series. • Vz-Iz characteristics are semi-logarithmic linear from IZ = 1 nA to 1 mA.


Cathode mark

Mark

1 2

1. Cathode

2. Anode

2A

HZU-LL Series





tem Symbol Value Unit Power dissipation Pd * 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: See Fig3.

HZU-LL Series

487


Zener Voltage Reverse Current Dynamic Resistance LinearityVZ(V) *1 IR (nA) ZZT (Ω) ZZK (kΩ) *2 ΔVZ(V) *3

Part No. Min Max IZ (mA) Max VR (V) Max IZT (mA) Typ IZK (μA) Max HZU2ALL 1.6 2.0 HZU2BLL 1.9 2.3 HZU2CLL 2.2 2.6

0.5 100 0.5 350 0.5 (1.2) 50 0.5

HZU3ALL 2.5 2.9 HZU3BLL 2.8 3.2 HZU3CLL 3.1 3.5

0.5 100 1.0 360 0.5 (1.2) 50 0.5


0.5 100 2.0 370 0.5 (1.5) 50 0.5


0.5 100 3.0 380 0.5 (1.5) 50 0.5

Notes: 1. Tested with DC. 2. Reference only. 3. ΔVZ = VZ (IZ = 0.5 mA) – VZ (Iz = 0.05 mA) 4. Type No. is as follows; HZU2ALL, HZU2BLL, … HZU5CLL.

Mark Code Part No Mark No. Part No Mark No.

HZU2ALL 2A HZU4ALL 4A HZU2BLL 2B HZU4BLL 4B HZU2CLL 2C HZU4CLL 4C HZU3ALL 3A HZU5ALL 5A HZU3BLL 3B HZU5BLL 5B HZU3CLL 3C HZU5CLL 5C

HZU-LL Series

488


0 1 2 3 4 5 6 7 8

HZ

U2LL

HZ

U3LL

HZ

U4LL

HZ

U5LL

1 2 3 4 5 6

–0.5

–1.0

–1.5

–0.02

–0.03

–0.04

–0.01

–0.05

0

–2.0

%/°CmV/°C

250

200

150

100

50

200150100500

0


15 20 1.6t mm

Material: Glass Epoxy Resin

+Cu Foil

× ×

1.5mm 0.8mm

Cu Foil

0.8

mm

Ze

ne

r C

urr

en

t

I Z (

A)





Po

we

r D

issip

atio

n

Pd

(

mW

)

10–4

10–2

10–3

10–5

10–6

10–7

10–8

Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t

γ Z (m

V/°

C)



Ze

ne

r V

olta

ge

Te

mp

era

ture

Co

effic

ien

t

gZ (

%/°

C)

489

MEMO

490

MEMO

Renesas Diode

Data Book

Publication Date: Rev.1.00, March 26, 2009

Published by: Sales Strategic Planning Div.

Renesas Technology Corp.

Edited by: Customer Support Department

Global Strategic Communication Div.

Renesas Solutions Corp.

© 2009. Renesas Technology Corp., All rights reserved. Printed in Japan.

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http://www.renesas.com

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

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