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AMG
Analog & Mems -Group
Industrial & Power Conversion
Div.
Quality & Reliability B-END RR000116CT6004
1/10
RELIABILITY EVALUATION QUALIFICATION
OF SOIC8L Narrow & SOIC8L E-PAD XDLF-IDF
(EXTREAM DENSITY LEAD FRAME) ATP1 (AMKOR PHILIPPINES SUBCON)
DOCUMENT INFORMATION
Version Date Pages Prepared by Approved by Comment 1.0 05-May-2016 F.VENTURA
I&PC QA&R / B/E A.PLATINI I&PC QA&R
MNG.
Final report
Note: This report is a summary of the reliability trials performed in good faith by STMicroelectronics in order to evaluate the potential reliability risks during the product life using a set of defined test methods. This report does not imply for STMicroelectronics expressly or implicitly any contractual obligations other than as set forth in STMicroelectronics general terms and conditions of Sale. This report and its contents shall not be disclosed to a third party without previous written agreement of STMicroelectronics.
AMG
Analog & Mems -Group
Industrial & Power Conversion
Div.
Quality & Reliability B-END RR000116CT6004
2/10
General Information
Product Line CRO7*U093ADZ
P/N L6561D-1HLF/ L6561D13TR-1HLF/
Product Group AMG Product division Industrial & Power Discrete Package SOIC 8L .150 NARROW Silicon Process technology A3 - BCD1 Maturity level step 29
Locations
Wafer fab AMK6 (ANG MO KIO S’PORE)
Assembly plant ATP1-SUBCON PHILIPPINES
Final Reliability Assessment
PASSED
Reliability Lab ST-MOROCCO
Document reference Short description AEC-Q100 Stress test qualification for automotive grade integrated circuits JESD47 Stress-Test-Driven Qualification of Integrated Circuits ADCS:8161393 General specification for product development
1 GLOSSARY DUT Device Under Test SS Sample Size
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2 RELIABILITY EVALUATION OVERVIEW
2.1 Objectives TO QUALIFY NEW XDLF (EXTREAM DENSITY L/FRAME) VERS. ON SOIC8L .15O/E-PAD NARROW PKG. ATP1 SUBCON
2.2 Conclusion
Qualification Plan requirements (WORKABILITY/ TESTING / CONSTRUCTION ANALISYS) have been fulfilled without exception. It’s stressed that reliability tests have shown that the devices behave correctly against environmental tests (no failure). Moreover, the stability of electrical parameters during the accelerated tests demonstrates the ruggedness of the products and safe operation, which is consequently expected during their lifetime. NOTE: The present RR (RR000116CT6004) CAN BE EXTENDED to all involved AMG/I&PC tech/products assembled on SOIC8L XDLF ATP1 line
DENSITY LEAD FRAME SCENARIO:
NEW FRAME OLD FRAME
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2.3 Construction note
*U093_ P/N: L6561D-1HLF/ L6561D13TR-1HLF/
Wafer/Die fab. information AMK6 Wafer fab manufacturing location ANG MO KIO S’PORE Technology BCD 1 Process family A3 BCD1 Die finishing back side CHROMIUM/NICKEL/GOLD Die size 2590,2060 UM Bond pad metallization layers Al/Si Passivation type SIN (NITRIDE) Wafer Testing (EWS) information Electrical testing manufacturing location AMK6 Assembly information Assembly site ATP1/ AMKOR PHILIPPINES Package description SOIC8L NARROW .150 Molding compound SUMITOMO EME G600 ECOPAK 2 COMPLIANCE Frame material OLIN C194 COPPER Die attach process EPOXY GLUE Die attach material HENKEL ABLEBOND 8290 Die pad size 90 X 130 mil XD IDF PN 101379012 Wire bonding process THERMOSONIC Wires bonding materials/diameters 1.3 mils Au Lead finishing process Pre- plated Package code O7 Final testing information Testing location ST-BSK MOROCCO
AMG
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Quality & Reliability B-END RR000116CT6004
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3 TESTS RESULTS SUMMARY
3.1 Test vehicle *U093
Lot #
Diffusion Lot Assy Lot Trace Code Process/
Package Product Line Comments
1 V6517VN3
CZ6040C601 n/a SOIC 8L NARROW CRO7*U093ADZ
Detailed results in below chapter will refer to P/N and Lot #.
3.2 Test plan and results summary P/N L6561D-1HLF/ L6561D13TR-1HLF/
Test PC Std ref. Conditions Steps Note
PC Y JESD22 A020-D
MSL_1 HTS 24H @125°C+TH
168H(85°C@85%RH)+3IR@260° 0/100
NO DELAMINATION TOP/BOTTOM
BEFORE & AFTER PRECOND.
TC Y JESD22 A-104
Ta = -65°C to 150°C
500CY 0/77
1000CY 0/77
In case of Automotive customer insert here the family data. In case of rejects include a short description of the failure analysis and corrective actions.
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Quality & Reliability B-END RR000116CT6004
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3.4.1 ANNEXES: MOUNT BOND DIAGRAM (MBD)
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3.2.1 Package outline/Mechanical data
AMG
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Industrial & Power Conversion
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Quality & Reliability B-END RR000116CT6004
8/10
AMG
Analog & Mems -Group
Industrial & Power Conversion
Div.
Quality & Reliability B-END RR000116CT6004
9/10
AMG
Analog & Mems -Group
Industrial & Power Conversion
Div.
Quality & Reliability B-END RR000116CT6004
10/10
Tests Description
Test name Description Purpose
Package Oriented
PC Preconditioning
The device is submitted to a typical temperature profile used for surface mounting devices, after a controlled moisture absorption.
As stand-alone test: to investigate the moisture sensitivity level. As preconditioning before other reliability tests: to verify that the surface mounting stress does not impact on the subsequent reliability performance. The typical failure modes are "pop corn" effect and delamination.
TC Temperature
Cycling
The device is submitted to cycled temperature excursions, between a hot and a cold chamber in air atmosphere.
To investigate failure modes related to the thermo-mechanical stress induced by the different thermal expansion of the materials interacting in the die-package system. Typical failure modes are linked to metal displacement, dielectric cracking, molding compound delamination, wire-bonds failure, die-attach layer degradation.
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 1/13
Preliminary Reliability Report
General Information
Locations
Product Line UK17 Wafer fab location ANG MO KIO
Product Description Step Down Switching Regulator
Assembly plant location
AMKOR ATP1 PHILIPPINES Product division I&PC
Package HSOP 8L
Silicon process technology BCD5-40NP Reliability assessment Pass
DOCUMENT HISTORY
Version Date Pages Author Comment
1.0 26-Feb-2016 13 S.O.Cannizzaro Preliminary release
Approved by Giuseppe Capodici
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 2/13
Table of Contents
1 APPLICABLE AND REFERENCE DOCUMENTS ....................................................................... 3
2 RELIABILITY EVALUATION overview ........................................................................................ 4
2.1 Objectives ........................................................................................................................................ 4
2.2 Conclusion ....................................................................................................................................... 4
3 Device Characteristics ............................................................................................................... 5
3.1 Device description ............................................................................................................................ 5
3.1.1 Pin connection ................................................................................................................................................... 5
3.1.2 Bonding diagram ............................................................................................................................................... 5
3.1.3 Package outline/Mechanical data ..................................................................................................................... 6
3.2 Traceability ...................................................................................................................................... 7
4 Tests results summary ............................................................................................................... 8
4.1 Test plan and results summary of UK17 with XD lead frame strip ....................................................... 8
4.2 Test plan and results summary of UK17 with HD lead frame strip ....................................................... 9
5 Tests Description & detailed results ........................................................................................... 10
5.1 Die oriented tests ........................................................................................................................... 10
5.1.1 High Temperature Operating Life .................................................................................................................... 10
5.1.2 Early Life Failure Rate ..................................................................................................................................... 10
5.2 Package oriented tests ................................................................................................................... 11
5.2.1 Pre-Conditioning .............................................................................................................................................. 11
5.2.2 High Temperature Storage .............................................................................................................................. 11
5.2.3 Thermal Cycles ............................................................................................................................................... 11
5.2.4 Autoclave ......................................................................................................................................................... 11
5.2.5 Temperature Humidity Bias ............................................................................................................................. 12
5.2.6 Power Temperature Cycling ............................................................................................................................ 12
5.3 Electrical Characterization Tests ..................................................................................................... 13
5.3.1 Latch-up........................................................................................................................................................... 13
5.3.2 E.S.D. .............................................................................................................................................................. 13
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 3/13
1 APPLICABLE AND REFERENCE DOCUMENTS
Document reference Short description AEC-Q100 : Stress test qualification for integrated circuits 0061692 : Reliability tests and criteria for qualifications
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 4/13
2 RELIABILITY EVALUATION OVERVIEW
2.1 Objectives
This report contains the reliability evaluation of UK17 device diffused in ANG MO KIO and assembled in HSOP 8L in AMKOR ATP1 PHILIPPINES in the overall plan of the S08ExpPad lead frame strip change in Amkor.
According to Reliability Qualification Plan, below is the list of the trials performed: Package Oriented Tests
Preconditioning
Temperature Cycling
Power Temperature Cycling
Autoclave
2.2 Conclusion
Taking in account the preliminary results of the trials performed on the UK17 diffused in ANG MO KIO and assembled in HSOP 8L in AMKOR ATP1 PHILIPPINES a positive judgment can be given out. To complete the evaluation the PTC trial need to be performed.
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 5/13
3 DEVICE CHARACTERISTICS
3.1 Device description
3.1.1 Pin connection
3.1.2 Bonding diagram
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 6/13
3.1.3 Package outline/Mechanical data
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 7/13
3.2 Traceability
Wafer fab information
Wafer fab manufacturing location ANG MO KIO
Wafer diameter 6 inches
Wafer thickness 375 µm
Silicon process technology BCD5-40NP
Die finishing back side Cr/Ni
Die size 2770x1980 µm
Bond pad metallization layers AlSiCu
Passivation PSG+SiON+Polyimide
Metal levels 3
Assembly Information
Assembly plant location AMKOR ATP1 PHILIPPINES
Package description HSOP 8L
Die pad size 2.413x3.099 mm
Molding compound Ablebond 8290
Wires bonding materials/diameters Au/1.3 mils
Die attach material Sumitomo G600
Lead solder material Sn
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 8/13
4 TESTS RESULTS SUMMARY
4.1 Test plan and results summary of UK17 with XD lead frame strip
Package Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
PC Pre-Conditioning: Moisture sensitivity level 3
192h 30°C/60% - 3 reflow PBT 260°C 0/154 0/154 0/154
PTC Power Temperature Cycling
On Chip Boards Tj=-40°C÷150°C Vcc=36V, Iout=0.7A
To be performed - - 1000h
AC Autoclave
PC before 121°C 2atm 0/77 0/77 0/77 96h
TC Temperature Cycling
PC before Temp. range: -50/+150°C 0/77 0/77 0/77 1000cy
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 9/13
4.2 Test plan and results summary of UK17 with HD lead frame strip
Die Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
HTOL High Temperature Operating Life
PC before Tj=150°C Vcc=36V, Iout=3A
0/77 0/77 0/77 1000h
ELFR Early Life Failure Rate
Tj=150°C Vcc=32V, Iout=0.4A
800 800 800 24h
Package Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
PC Pre-Conditioning: Moisture sensitivity level 3
192h 30°C/60% - 3 reflow PBT 260°C 0/308 0/308 0/308
THB Temperature Humidity Bias
PC before Ta=85°C/85%RH Pdut~0W, Vcc=20V
0/77 0/77 0/77 1000h
PTC Power Temperature Cycling
On Chip Boards Tj=-40°C÷150°C Vcc=36V, Iout=0.7A
0/45 - - 1000h
AC Autoclave
PC before 121°C 2atm 0/77 0/77 0/77 96h
TC Temperature Cycling
PC before Temp. range: -50/+150°C 0/77 0/77 0/77 1000cy
HTSL High Temperature Storage
No bias Tamb=150°C 0/77 - - 1000h
Electrical Characterization Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
ESD Electro Static Discharge
Human Body Model +/- 2kV 0/3 - -
Machine Model +/- 100V 0/3 - -
Charge Device Model
+/- 1.5kV 0/3 - -
LU Latch-Up
Over-voltage and Current Injection
Tamb=125°C Jedec78
0/6 - -
All above trials performed on ABA rev.
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 10/13
5 TESTS DESCRIPTION & DETAILED RESULTS
5.1 Die oriented tests
5.1.1 High Temperature Operating Life
This test is performed like application conditions in order to check electromigration phenomena, gate oxide weakness and other design/manufacturing defects put in evidence by internal power dissipation. The read-outs flow chart is the following:
Initial testing @ Ta=-40°C/25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000hrs) @ Ta=-40°C/25°C/125°C
5.1.2 Early Life Failure Rate
This test is to evaluate the defects inducing failure in early life. The device is stressed in biased conditions at the max junction temperature. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Final Testing (24 hrs) @ Ta=25°C/125°C
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 11/13
5.2 Package oriented tests
5.2.1 Pre-Conditioning
The device is submitted to a typical temperature profile used for surface mounting, after a controlled moisture absorption. The scope is to verify that the surface mounting stress does not impact on the subsequent reliability performance. The typical failure modes are "pop corn" effect and delamination. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C.
Final Testing @ Ta=25°C/125°C
5.2.2 High Temperature Storage
The device is stored in unbiased condition at the max. temperature allowed by the package materials, sometimes higher than the max. operative temperature. The scope is to investigate the failure mechanisms activated by high temperature, typically wire-bonds solder joint ageing, data retention faults, metal stress-voiding The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
5.2.3 Thermal Cycles
The purpose of this test is to evaluate the thermo mechanical behavior under moderate thermal gradient stress. The read-outs flow chart is the following:
Initial testing @ Ta=125°C.
Check at 500 cycles @ Ta=25°C
Final Testing (1000 cycles) @ Ta=125°C TEST CONDITIONS:
Ta= -50°C to +150°C(air)
5.2.4 Autoclave
The purpose of this test is to point out critical water entry path with consequent corrosion phenomena related to chemical contamination and package hermeticity. The read-outs flow chart is the following:
Initial testing @ Ta=25°C.
Final Testing (96hrs) @ Ta=25°C. TEST CONDITIONS:
P=2.08 atm
Ta=121°C
test time= 96 hrs
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 12/13
5.2.5 Temperature Humidity Bias
The test is addressed to put in evidence problems of the die-package compatibility related to phenomena activated in wet conditions such as electro-chemical corrosion. The device is stressed in static configuration approaching some field status like power down. Temperature, Humidity and Bias are applied to the device in the following environmental conditions => Ta=85°C / RH=85%. Input pins to Low / High Voltage (alternate) to maximize voltage contrast. Test Duration 2000 h. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
5.2.6 Power Temperature Cycling
This test simulates typical power automotive application. The test is addressed mainly to focus die-attach and wire bonding problems in all the temperature stress changes. Combined stress performing an HTOL stress while the ambient temperature is cycling between –40 to +110°C (Tj=150°C) with the DUT switched alternatively ON/OFF (5min. each) in asynchronous mode with respect the ambient temperature change, (1 cycle: 10’ @ stress Temp. / 20’ to change Temperature). The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168, 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
Reliability Report RR000716CS6080
AMG Group – RELIABILITY - CASTELLETTO
Version 1.0 Page 13/13
5.3 Electrical Characterization Tests
5.3.1 Latch-up
This test is intended to verify the presence of bulk parasitic effects inducing latch-up. The device is submitted to a direct current forced/sinked into the input/output pins. Removing the direct current no change in the supply current must be observed. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Latch-UP trial @ Ta=125°C
Final Testing @ Ta=25°C/125°C Stress applied:
condition NEG. INJECTION POS. INJECTION OVERVOLTAGE
IN low -100mA Inom+250mA
1.5 x VDD or MSV or AMR, whichever is less
IN high -100mA Inom+250mA
1.5 x VDD or MSV or AMR, whichever is less
5.3.2 E.S.D.
This test is performed to verify adequate pin protection to electrostatic discharges. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
ESD discharging @ Ta=25°C
Final Testing @ Ta=25°C/125°C TEST CONDITIONS:
o Human Body Model ANSI/ESDA/JEDEC STANDARD JES001 CDF-AEC-Q100-002
o Machine Model JEDEC STANDARD EIA/JESD-A115 CDF-AEC-Q100-003
o Charge Device Model ANSI/ESD STM 5.3.1 ESDA – JEDEC JESD22-C101
CDF-AEC-Q100-011
Reliability Report RR000816CS6080
IPC – RELIABILITY - CASTELLETTO
Version 1.0 Page 1/13
Preliminary Reliability Report
General Information
Locations
Product Line UK18 Wafer fab location ANG MO KIO
Product Description Step Down Switching Regulator
Assembly plant location
AMKOR ATP1 PHILIPPINES Product division I&PC
Package HSOP 8L
Silicon process technology BCD5-40NP Reliability assessment Pass
DOCUMENT HISTORY
Version Date Pages Author Comment
1.0 27-May-2016 13 A. Spiezia Original document
Approved by Giuseppe Capodici
Reliability Report RR000816CS6080
IPC – RELIABILITY - CASTELLETTO
Version 1.0 Page 2/13
Table of Contents
1 APPLICABLE AND REFERENCE DOCUMENTS ....................................................................... 3
2 RELIABILITY EVALUATION overview ........................................................................................ 4
2.1 Objectives ........................................................................................................................................ 4
2.2 Conclusion ....................................................................................................................................... 4
3 Device Characteristics ............................................................................................................... 5
3.1 Device description ............................................................................................................................ 5
3.1.1 Pin connection ................................................................................................................................................... 5
3.1.2 Bonding diagram ............................................................................................................................................... 5
3.1.3 Package outline/Mechanical data ..................................................................................................................... 6
3.2 Traceability ...................................................................................................................................... 7
4 Tests results summary ............................................................................................................... 8
4.1 Test plan and results summary of UK18 with XD lead frame strip ....................................................... 8
4.2 Generica Data from UK17 ................................................................................................................ 9
5 Tests Description & detailed results ........................................................................................... 10
5.1 Die oriented tests ........................................................................................................................... 10
5.1.1 High Temperature Operating Life .................................................................................................................... 10
5.1.2 Early Life Failure Rate ..................................................................................................................................... 10
5.2 Package oriented tests ................................................................................................................... 11
5.2.1 Pre-Conditioning .............................................................................................................................................. 11
5.2.2 High Temperature Storage .............................................................................................................................. 11
5.2.3 Thermal Cycles ............................................................................................................................................... 11
5.2.4 Autoclave ......................................................................................................................................................... 11
5.2.5 Temperature Humidity Bias ............................................................................................................................. 12
5.2.6 Power Temperature Cycling ............................................................................................................................ 12
5.3 Electrical Characterization Tests ..................................................................................................... 13
5.3.1 Latch-up........................................................................................................................................................... 13
5.3.2 E.S.D. .............................................................................................................................................................. 13
Reliability Report RR000816CS6080
IPC – RELIABILITY - CASTELLETTO
Version 1.0 Page 3/13
1 APPLICABLE AND REFERENCE DOCUMENTS
Document reference Short description AEC-Q100 : Stress test qualification for integrated circuits 0061692 : Reliability tests and criteria for qualifications
Reliability Report RR000816CS6080
IPC – RELIABILITY - CASTELLETTO
Version 1.0 Page 4/13
2 RELIABILITY EVALUATION OVERVIEW
2.1 Objectives
This report contains the reliability evaluation of UK18 device diffused in ANG MO KIO and assembled in HSOP 8L in AMKOR ATP1 PHILIPPINES, according to the AEC-Q100 (Grade1) specifications, in the overall plan of the S08ExpPad with XD lead frame strip qualification.
According to Reliability Qualification Plan, considering UK18 as circuit rerouting of UK17, below is the list of the trials performed:
Package Oriented Tests
Preconditioning
Temperature Cycling
Power Temperature Cycling
Electrical Characterization
ESD resistance test
LATCH-UP resistance test
2.2 Conclusion
Taking in account the preliminary results of the trials performed on the UK18 diffused in ANG MO KIO and assembled in HSOP 8L in AMKOR ATP1 PHILIPPINES a positive judgment can be given out.
To complete the evaluation the PTC need to be performed.
Reliability Report RR000816CS6080
IPC – RELIABILITY - CASTELLETTO
Version 1.0 Page 5/13
3 DEVICE CHARACTERISTICS
3.1 Device description
3.1.1 Pin connection
3.1.2 Bonding diagram
Reliability Report RR000816CS6080
IPC – RELIABILITY - CASTELLETTO
Version 1.0 Page 6/13
3.1.3 Package outline/Mechanical data
Reliability Report RR000816CS6080
IPC – RELIABILITY - CASTELLETTO
Version 1.0 Page 7/13
3.2 Traceability
Wafer fab information
Wafer fab manufacturing location ANG MO KIO
Wafer diameter 6 inches
Wafer thickness 375 µm
Silicon process technology BCD5-40NP
Die finishing back side Cr/Ni
Die size 2770x1980 µm
Bond pad metallization layers AlSiCu
Passivation PSG+SiON+Polyimide
Metal levels 3
Assembly Information
Assembly plant location AMKOR ATP1 PHILIPPINES
Package description HSOP 8L
Die pad size 2.413x3.099 mm
Molding compound Ablebond 8290
Wires bonding materials/diameters Au/1.3 mils
Die attach material Sumitomo G600
Lead solder material Sn
Reliability Report RR000816CS6080
IPC – RELIABILITY - CASTELLETTO
Version 1.0 Page 8/13
4 TESTS RESULTS SUMMARY
4.1 Test plan and results summary of UK18 with XD lead frame strip
Package Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1
PC Pre-Conditioning: Moisture sensitivity level 3
192h 30°C/60% - 3 reflow PBT 260°C 0/77
PTC Power Temperature Cycling
On Chip Boards Tj=-40°C÷150°C To be performed 1000h
TC Temperature Cycling
PC before Temp. range: -50/+150°C 0/77 1000cy
Electrical Characterization Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1
ESD Electro Static Discharge
Human Body Model +/- 2kV 0/3
Charge Device Model
+/- 1.5kV 0/3
LU Latch-Up
Over-voltage and Current Injection
Tamb=125°C Jedec78
0/6
All above trials performed on ABA rev.
Reliability Report RR000816CS6080
IPC – RELIABILITY - CASTELLETTO
Version 1.0 Page 9/13
4.2 Generica Data from UK17
Die Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
HTOL High Temperature Operating Life
PC before Tj=150°C 0/77 0/77 0/77 1000h
ELFR Early Life Failure Rate
Tj=150°C 800 800 800 24h
Package Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
PC Pre-Conditioning: Moisture sensitivity level 3
192h 30°C/60% - 3 reflow PBT 260°C 0/308 0/308 0/308
THB Temperature Humidity Bias
PC before Ta=85°C/85%RH 0/77 0/77 0/77 1000h
PTC Power Temperature Cycling
On Chip Boards Tj=-40°C÷150°C 0/45 - - 1000h
AC Autoclave
PC before 121°C 2atm 0/77 0/77 0/77 96h
TC Temperature Cycling
PC before Temp. range: -50/+150°C 0/77 0/77 0/77 1000cy
HTSL High Temperature Storage
No bias Tamb=150°C 0/77 - - 1000h
Reliability Report RR000816CS6080
IPC – RELIABILITY - CASTELLETTO
Version 1.0 Page 10/13
5 TESTS DESCRIPTION & DETAILED RESULTS
5.1 Die oriented tests
5.1.1 High Temperature Operating Life
This test is performed like application conditions in order to check electromigration phenomena, gate oxide weakness and other design/manufacturing defects put in evidence by internal power dissipation. The read-outs flow chart is the following:
Initial testing @ Ta=-40°C/25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000hrs) @ Ta=-40°C/25°C/125°C
5.1.2 Early Life Failure Rate
This test is to evaluate the defects inducing failure in early life. The device is stressed in biased conditions at the max junction temperature. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Final Testing (24 hrs) @ Ta=25°C/125°C
Reliability Report RR000816CS6080
IPC – RELIABILITY - CASTELLETTO
Version 1.0 Page 11/13
5.2 Package oriented tests
5.2.1 Pre-Conditioning
The device is submitted to a typical temperature profile used for surface mounting, after a controlled moisture absorption. The scope is to verify that the surface mounting stress does not impact on the subsequent reliability performance. The typical failure modes are "pop corn" effect and delamination. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C.
Final Testing @ Ta=25°C/125°C
5.2.2 High Temperature Storage
The device is stored in unbiased condition at the max. temperature allowed by the package materials, sometimes higher than the max. operative temperature. The scope is to investigate the failure mechanisms activated by high temperature, typically wire-bonds solder joint ageing, data retention faults, metal stress-voiding The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
5.2.3 Thermal Cycles
The purpose of this test is to evaluate the thermo mechanical behavior under moderate thermal gradient stress. The read-outs flow chart is the following:
Initial testing @ Ta=125°C.
Check at 500 cycles @ Ta=25°C
Final Testing (1000 cycles) @ Ta=125°C TEST CONDITIONS:
Ta= -50°C to +150°C(air)
5.2.4 Autoclave
The purpose of this test is to point out critical water entry path with consequent corrosion phenomena related to chemical contamination and package hermeticity. The read-outs flow chart is the following:
Initial testing @ Ta=25°C.
Final Testing (96hrs) @ Ta=25°C. TEST CONDITIONS:
P=2.08 atm
Ta=121°C
test time= 96 hrs
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5.2.5 Temperature Humidity Bias
The test is addressed to put in evidence problems of the die-package compatibility related to phenomena activated in wet conditions such as electro-chemical corrosion. The device is stressed in static configuration approaching some field status like power down. Temperature, Humidity and Bias are applied to the device in the following environmental conditions => Ta=85°C / RH=85%. Input pins to Low / High Voltage (alternate) to maximize voltage contrast. Test Duration 2000 h. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
5.2.6 Power Temperature Cycling
This test simulates typical power automotive application. The test is addressed mainly to focus die-attach and wire bonding problems in all the temperature stress changes. Combined stress performing an HTOL stress while the ambient temperature is cycling between –40 to +110°C (Tj=150°C) with the DUT switched alternatively ON/OFF (5min. each) in asynchronous mode with respect the ambient temperature change, (1 cycle: 10’ @ stress Temp. / 20’ to change Temperature). The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168, 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
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5.3 Electrical Characterization Tests
5.3.1 Latch-up
This test is intended to verify the presence of bulk parasitic effects inducing latch-up. The device is submitted to a direct current forced/sinked into the input/output pins. Removing the direct current no change in the supply current must be observed. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Latch-UP trial @ Ta=125°C
Final Testing @ Ta=25°C/125°C Stress applied:
condition NEG. INJECTION POS. INJECTION OVERVOLTAGE
IN low -100mA +60mA 1.5 x VDD or MSV or AMR, whichever is less
IN high -100mA +100mA 1.5 x VDD or MSV or AMR, whichever is less
5.3.2 E.S.D.
This test is performed to verify adequate pin protection to electrostatic discharges. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
ESD discharging @ Ta=25°C
Final Testing @ Ta=25°C/125°C TEST CONDITIONS:
o Human Body Model ANSI/ESDA/JEDEC STANDARD JES001 CDF-AEC-Q100-002
o Charge Device Model ANSI/ESD STM 5.3.1 ESDA – JEDEC JESD22-C101
CDF-AEC-Q100-011
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Reliability Report
General Information
Locations
Product Line UT20 Wafer fab location ANG MO KIO
Product Description Step Down Switching Regulator
Assembly plant location
AMKOR ATP1 PHILIPPINES Product division IPC
Package HSOP 8L
Silicon process technology BCD5-40NP Reliability assessment Pass
DOCUMENT HISTORY
Version Date Pages Author Comment
1.0 14-Jan-2016 13 S.O.Cannizzaro Preliminary release
1.1 6-May-2016 13 A. Spiezia Final results updated
Approved by Giuseppe Capodici
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Table of Contents
1 APPLICABLE AND REFERENCE DOCUMENTS ....................................................................... 3
2 RELIABILITY EVALUATION overview ........................................................................................ 4
2.1 Objectives ........................................................................................................................................ 4
2.2 Conclusion ....................................................................................................................................... 4
3 Device Characteristics ............................................................................................................... 5
3.1 Device description ............................................................................................................................ 5
3.1.1 Pin connection ................................................................................................................................................... 5
3.1.2 Bonding diagram ............................................................................................................................................... 5
3.1.3 Package outline/Mechanical data ..................................................................................................................... 6
3.2 Traceability ...................................................................................................................................... 7
4 Tests results summary ............................................................................................................... 8
4.1 Generic data from UK17 ................................................................................................................... 9
5 Tests Description & detailed results ........................................................................................... 10
5.1 Die oriented tests ........................................................................................................................... 10
5.1.1 High Temperature Operating Life .................................................................................................................... 10
5.1.2 Early Life Failure Rate ..................................................................................................................................... 10
5.2 Package oriented tests ................................................................................................................... 11
5.2.1 Pre-Conditioning .............................................................................................................................................. 11
5.2.2 High Temperature Storage .............................................................................................................................. 11
5.2.3 Thermal Cycles ............................................................................................................................................... 11
5.2.4 Autoclave ......................................................................................................................................................... 11
5.2.5 Temperature Humidity Bias ............................................................................................................................. 12
5.2.6 Power Temperature Cycling ............................................................................................................................ 12
5.3 Electrical Characterization Tests ..................................................................................................... 13
5.3.1 Latch-up........................................................................................................................................................... 13
5.3.2 E.S.D. .............................................................................................................................................................. 13
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1 APPLICABLE AND REFERENCE DOCUMENTS
Document reference Short description AEC-Q100 : Stress test qualification for integrated circuits 0061692 : Reliability tests and criteria for qualifications
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2 RELIABILITY EVALUATION OVERVIEW
2.1 Objectives
This report contains the reliability evaluation of UT20 device diffused in ANG MO KIO and assembled in HSOP 8L in AMKOR ATP1 PHILIPPINES, according to the AEC-Q100 (Grade1) specifications, in the overall plan of the S08ExpPad with XD lead frame strip qualification.
According to Reliability Qualification Plan, considering UT20 as circuit rerouting of UK17, below is the list of the trials performed: Package Oriented Tests
Preconditioning
Temperature Cycling
Power Temperature Cycling Electrical Characterization
ESD resistance test
LATCH-UP resistance test
2.2 Conclusion
Taking in account the preliminary results of the trials performed on the UT20 diffused in ANG MO KIO and assembled in HSOP 8L in AMKOR ATP1 PHILIPPINES can be qualified from a reliability viewpoint.
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3 DEVICE CHARACTERISTICS
3.1 Device description
3.1.1 Pin connection
3.1.2 Bonding diagram
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3.1.3 Package outline/Mechanical data
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3.2 Traceability
Wafer fab information
Wafer fab manufacturing location ANG MO KIO
Wafer diameter 6 inches
Wafer thickness 375 µm
Silicon process technology BCD5-40NP
Die finishing back side Cr/Ni
Die size 2770x1980 µm
Bond pad metallization layers AlSiCu
Passivation USG-PSG-SiON-PIX
Metal levels 3
Assembly Information
Assembly plant location AMKOR ATP1 PHILIPPINES
Package description HSOP 8L
Die pad size 2.413x3.099 mm
Molding compound Sumitomo G600
Wires bonding materials/diameters Au/1.3 mils
Die attach material Ablebond 8290
Lead solder material Sn
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4 TESTS RESULTS SUMMARY
Test plan and results summary of UT20 with XD lead frame strip
Package Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
PC Pre-Conditioning: Moisture sensitivity level 3
192h 30°C/60% - 3 reflow PBT 260°C 0/77
PTC Power Temperature Cycling
On Chip Boards Tj=-40°C÷150°C 0/45 1000h
TC Temperature Cycling
PC before Temp. range: -50/+150°C 0/77 1000cy
Electrical Characterization Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
ESD Electro Static Discharge
Human Body Model +/- 2kV 0/3
Charge Device Model
+/- 750V 0/3
LU Latch-Up
Over-voltage and Current Injection
Tamb=125°C Jedec78
0/6
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4.1 Generic data from UK17
Die Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
HTOL High Temperature Operating Life
PC before Tj=150°C 0/77 0/77 0/77 1000h
ELFR Early Life Failure Rate
Tj=150°C 800 800 800 24h
Package Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
PC Pre-Conditioning: Moisture sensitivity level 3
192h 30°C/60% - 3 reflow PBT 260°C 0/308 0/308 0/308
THB Temperature Humidity Bias
PC before Ta=85°C/85%RH 0/77 0/77 0/77 1000h
PTC Power Temperature Cycling
On Chip Boards Tj=-40°C÷150°C 0/45 - - 1000h
AC Autoclave
PC before 121°C 2atm 0/77 0/77 0/77 96h
TC Temperature Cycling
PC before Temp. range: -50/+150°C 0/77 0/77 0/77 1000cy
HTSL High Temperature Storage
No bias Tamb=150°C 0/77 - - 1000h
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5 TESTS DESCRIPTION & DETAILED RESULTS
5.1 Die oriented tests
5.1.1 High Temperature Operating Life
This test is performed like application conditions in order to check electromigration phenomena, gate oxide weakness and other design/manufacturing defects put in evidence by internal power dissipation. The read-outs flow chart is the following:
Initial testing @ Ta=-40°C/25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000hrs) @ Ta=-40°C/25°C/125°C
5.1.2 Early Life Failure Rate
This test is to evaluate the defects inducing failure in early life. The device is stressed in biased conditions at the max junction temperature. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Final Testing (24 hrs) @ Ta=25°C/125°C
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5.2 Package oriented tests
5.2.1 Pre-Conditioning
The device is submitted to a typical temperature profile used for surface mounting, after a controlled moisture absorption. The scope is to verify that the surface mounting stress does not impact on the subsequent reliability performance. The typical failure modes are "pop corn" effect and delamination. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C.
Final Testing @ Ta=25°C/125°C
5.2.2 High Temperature Storage
The device is stored in unbiased condition at the max. temperature allowed by the package materials, sometimes higher than the max. operative temperature. The scope is to investigate the failure mechanisms activated by high temperature, typically wire-bonds solder joint ageing, data retention faults, metal stress-voiding The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
5.2.3 Thermal Cycles
The purpose of this test is to evaluate the thermo mechanical behavior under moderate thermal gradient stress. The read-outs flow chart is the following:
Initial testing @ Ta=125°C.
Check at 500 cycles @ Ta=25°C
Final Testing (1000 cycles) @ Ta=125°C TEST CONDITIONS:
Ta= -50°C to +150°C(air)
5.2.4 Autoclave
The purpose of this test is to point out critical water entry path with consequent corrosion phenomena related to chemical contamination and package hermeticity. The read-outs flow chart is the following:
Initial testing @ Ta=25°C.
Final Testing (96hrs) @ Ta=25°C. TEST CONDITIONS:
P=2.08 atm
Ta=121°C
test time= 96 hrs
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5.2.5 Temperature Humidity Bias
The test is addressed to put in evidence problems of the die-package compatibility related to phenomena activated in wet conditions such as electro-chemical corrosion. The device is stressed in static configuration approaching some field status like power down. Temperature, Humidity and Bias are applied to the device in the following environmental conditions => Ta=85°C / RH=85%. Input pins to Low / High Voltage (alternate) to maximize voltage contrast. Test Duration 2000 h. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
5.2.6 Power Temperature Cycling
This test simulates typical power automotive application. The test is addressed mainly to focus die-attach and wire bonding problems in all the temperature stress changes. Combined stress performing an HTOL stress while the ambient temperature is cycling between –40 to +110°C (Tj=150°C) with the DUT switched alternatively ON/OFF (5min. each) in asynchronous mode with respect the ambient temperature change, (1 cycle: 10’ @ stress Temp. / 20’ to change Temperature). The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168, 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
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5.3 Electrical Characterization Tests
5.3.1 Latch-up
This test is intended to verify the presence of bulk parasitic effects inducing latch-up. The device is submitted to a direct current forced/sinked into the input/output pins. Removing the direct current no change in the supply current must be observed. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Latch-UP trial @ Ta=125°C
Final Testing @ Ta=25°C/125°C Stress applied:
condition NEG. INJECTION POS. INJECTION OVERVOLTAGE
IN low -100mA Inom+100mA 1.5 x VDD or MSV or AMR, whichever is less
IN high -100mA Inom+100mA 1.5 x VDD or MSV or AMR, whichever is less
5.3.2 E.S.D.
This test is performed to verify adequate pin protection to electrostatic discharges. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
ESD discharging @ Ta=25°C
Final Testing @ Ta=25°C/125°C TEST CONDITIONS:
o Human Body Model ANSI/ESDA/JEDEC STANDARD JES001 CDF-AEC-Q100-002
o Charge Device Model ANSI/ESD STM 5.3.1 ESDA – JEDEC JESD22-C101
CDF-AEC-Q100-011
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Reliability Report
General Information
Locations
Product Line UD73 Wafer fab location ANG MO KIO
Product Description Step Down Switching Regulator
Assembly plant location
AMKOR ATP1 PHILIPPINES Product division I&PC
Package HSOP 8L
Silicon process technology BCD5-40NP Reliability assessment Pass
DOCUMENT HISTORY
Version Date Pages Author Comment
1.0 14-Jan-2016 13 S.O.Cannizzaro Original document
1.1 27-May-2016 13 A. Spiezia Typo corrections
Approved by Giuseppe Capodici
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Table of Contents
1 APPLICABLE AND REFERENCE DOCUMENTS ....................................................................... 3
2 RELIABILITY EVALUATION overview ........................................................................................ 4
2.1 Objectives ........................................................................................................................................ 4
2.2 Conclusion ....................................................................................................................................... 4
3 Device Characteristics ............................................................................................................... 5
3.1 Device description ............................................................................................................................ 5
3.1.1 Pin connection ................................................................................................................................................... 5
3.1.2 Bonding diagram ............................................................................................................................................... 5
3.1.3 Package outline/Mechanical data ..................................................................................................................... 6
3.2 Traceability ...................................................................................................................................... 7
4 Tests results summary ............................................................................................................... 8
4.1 Test plan and results summary of UD73 with XD lead frame strip ....................................................... 8
4.2 Generic data from UK17 ................................................................................................................... 9
5 Tests Description & detailed results ........................................................................................... 10
5.1 Die oriented tests ........................................................................................................................... 10
5.1.1 High Temperature Operating Life .................................................................................................................... 10
5.1.2 Early Life Failure Rate ..................................................................................................................................... 10
5.2 Package oriented tests ................................................................................................................... 11
5.2.1 Pre-Conditioning .............................................................................................................................................. 11
5.2.2 High Temperature Storage .............................................................................................................................. 11
5.2.3 Thermal Cycles ............................................................................................................................................... 11
5.2.4 Autoclave ......................................................................................................................................................... 11
5.2.5 Temperature Humidity Bias ............................................................................................................................. 12
5.2.6 Power Temperature Cycling ............................................................................................................................ 12
5.3 Electrical Characterization Tests ..................................................................................................... 13
5.3.1 Latch-up........................................................................................................................................................... 13
5.3.2 E.S.D. .............................................................................................................................................................. 13
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1 APPLICABLE AND REFERENCE DOCUMENTS
Document reference Short description AEC-Q100 : Stress test qualification for integrated circuits 0061692 : Reliability tests and criteria for qualifications
Reliability Report RR001016CS6080
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Version 1.0 Page 4/13
2 RELIABILITY EVALUATION OVERVIEW
2.1 Objectives
This report contains the reliability evaluation of UD73 device diffused in ANG MO KIO and assembled in HSOP 8L in AMKOR ATP1 PHILIPPINES, according to the AEC-Q100 (Grade1) specifications, in the overall plan of the S08ExpPad with XD lead frame strip qualification.
According to Reliability Qualification Plan, considering UD73 as circuit rerouting of UK17, below is the list of the trials performed: Package Oriented Tests
Preconditioning
Temperature Cycling
Power Temperature Cycling
Electrical Characterization
ESD resistance test
LATCH-UP resistance test
2.2 Conclusion
Taking in account the results of the trials performed the UD73 diffused in ANG MO KIO and assembled in HSOP 8L in AMKOR ATP1 PHILIPPINES can be qualified from reliability viewpoint.
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3 DEVICE CHARACTERISTICS
3.1 Device description
3.1.1 Pin connection
3.1.2 Bonding diagram
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3.1.3 Package outline/Mechanical data
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3.2 Traceability
Wafer fab information
Wafer fab manufacturing location ANG MO KIO
Wafer diameter 6 inches
Wafer thickness 375 µm
Silicon process technology BCD5-40NP
Die finishing back side Cr/Ni
Die size 2770x1980 µm
Bond pad metallization layers AlSiCu
Passivation PSG+SiON+Polyimide
Metal levels 3
Assembly Information
Assembly plant location AMKOR ATP1 PHILIPPINES
Package description HSOP 8L
Die pad size 2.413x3.099 mm
Molding compound Ablebond 8290
Wires bonding materials/diameters Au/1.3 mils
Die attach material Sumitomo G600
Lead solder material Sn
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4 TESTS RESULTS SUMMARY
4.1 Test plan and results summary of UD73 with XD lead frame strip
Package Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
PC Pre-Conditioning: Moisture sensitivity level 3
192h 30°C/60% - 3 reflow PBT 260°C 0/77 - -
PTC Power Temperature Cycling
On Chip Boards Tj=-40°C÷150°C Vcc=36V, Iout=0.7A
0/45 - - 1000h
TC Temperature Cycling
PC before Temp. range: -50/+150°C 0/77 - - 1000cy
Electrical Characterization Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
ESD Electro Static Discharge
Human Body Model +/- 2kV 0/3 - -
Charge Device Model
+/- 1kV 0/3 - -
LU Latch-Up
Over-voltage and Current Injection
Tamb=125°C Jedec78
0/6 - -
All above trials performed on EEA rev.
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4.2 Generic data from UK17
Die Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
HTOL High Temperature Operating Life
PC before Tj=150°C Vcc=36V
0/77 0/77 0/77 1000h
ELFR Early Life Failure Rate
Tj=150°C Vcc=32V
800 800 800 24h
Package Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
PC Pre-Conditioning: Moisture sensitivity level 3
192h 30°C/60% - 3 reflow PBT 260°C 0/308 0/308 0/308
THB Temperature Humidity Bias
PC before Ta=85°C/85%RH Pdut~0W, Vcc=20V
0/77 0/77 0/77 1000h
PTC Power Temperature Cycling
On Chip Boards Tj=-40°C÷150°C Vcc=36V, Iout=0.7A
0/45 - - 1000h
AC Autoclave
PC before 121°C 2atm 0/77 0/77 0/77 96h
TC Temperature Cycling
PC before Temp. range: -50/+150°C 0/77 0/77 0/77 1000cy
HTSL High Temperature Storage
No bias Tamb=150°C 0/77 - - 1000h
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5 TESTS DESCRIPTION & DETAILED RESULTS
5.1 Die oriented tests
5.1.1 High Temperature Operating Life
This test is performed like application conditions in order to check electromigration phenomena, gate oxide weakness and other design/manufacturing defects put in evidence by internal power dissipation. The read-outs flow chart is the following:
Initial testing @ Ta=-40°C/25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000hrs) @ Ta=-40°C/25°C/125°C
5.1.2 Early Life Failure Rate
This test is to evaluate the defects inducing failure in early life. The device is stressed in biased conditions at the max junction temperature. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Final Testing (24 hrs) @ Ta=25°C/125°C
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5.2 Package oriented tests
5.2.1 Pre-Conditioning
The device is submitted to a typical temperature profile used for surface mounting, after a controlled moisture absorption. The scope is to verify that the surface mounting stress does not impact on the subsequent reliability performance. The typical failure modes are "pop corn" effect and delamination. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C.
Final Testing @ Ta=25°C/125°C
5.2.2 High Temperature Storage
The device is stored in unbiased condition at the max. temperature allowed by the package materials, sometimes higher than the max. operative temperature. The scope is to investigate the failure mechanisms activated by high temperature, typically wire-bonds solder joint ageing, data retention faults, metal stress-voiding The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
5.2.3 Thermal Cycles
The purpose of this test is to evaluate the thermo mechanical behavior under moderate thermal gradient stress. The read-outs flow chart is the following:
Initial testing @ Ta=125°C.
Check at 500 cycles @ Ta=25°C
Final Testing (1000 cycles) @ Ta=125°C TEST CONDITIONS:
Ta= -50°C to +150°C(air)
5.2.4 Autoclave
The purpose of this test is to point out critical water entry path with consequent corrosion phenomena related to chemical contamination and package hermeticity. The read-outs flow chart is the following:
Initial testing @ Ta=25°C.
Final Testing (96hrs) @ Ta=25°C. TEST CONDITIONS:
P=2.08 atm
Ta=121°C
test time= 96 hrs
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5.2.5 Temperature Humidity Bias
The test is addressed to put in evidence problems of the die-package compatibility related to phenomena activated in wet conditions such as electro-chemical corrosion. The device is stressed in static configuration approaching some field status like power down. Temperature, Humidity and Bias are applied to the device in the following environmental conditions => Ta=85°C / RH=85%. Input pins to Low / High Voltage (alternate) to maximize voltage contrast. Test Duration 2000 h. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
5.2.6 Power Temperature Cycling
This test simulates typical power automotive application. The test is addressed mainly to focus die-attach and wire bonding problems in all the temperature stress changes. Combined stress performing an HTOL stress while the ambient temperature is cycling between –40 to +110°C (Tj=150°C) with the DUT switched alternatively ON/OFF (5min. each) in asynchronous mode with respect the ambient temperature change, (1 cycle: 10’ @ stress Temp. / 20’ to change Temperature). The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168, 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
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5.3 Electrical Characterization Tests
5.3.1 Latch-up
This test is intended to verify the presence of bulk parasitic effects inducing latch-up. The device is submitted to a direct current forced/sinked into the input/output pins. Removing the direct current no change in the supply current must be observed. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Latch-UP trial @ Ta=125°C
Final Testing @ Ta=25°C/125°C Stress applied:
condition NEG. INJECTION POS. INJECTION OVERVOLTAGE
IN low -100mA 100mA
1.5 x VDD or MSV or AMR, whichever is less
IN high -70mA 100mA
1.5 x VDD or MSV or AMR, whichever is less
5.3.2 E.S.D.
This test is performed to verify adequate pin protection to electrostatic discharges. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
ESD discharging @ Ta=25°C
Final Testing @ Ta=25°C/125°C TEST CONDITIONS:
o Human Body Model ANSI/ESDA/JEDEC STANDARD JES001 CDF-AEC-Q100-002
o Charge Device Model ANSI/ESD STM 5.3.1 ESDA – JEDEC JESD22-C101
CDF-AEC-Q100-011
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Reliability Report
General Information
Locations
Product Line UA50 Wafer fab location CATANIA M5
Product Description Step Down Switching Regulator
Assembly plant location
AMKOR ATP1 PHILIPPINES Product division IPC
Package HSOP 8L
Silicon process technology BCD6S Reliability assessment Pass
DOCUMENT HISTORY
Version Date Pages Author Comment
1.0 26-Feb-2016 13 S.O.Cannizzaro Original document
1.1 27-May-2016 13 A. Spiezia Typo corrections
Approved by Giuseppe Capodici
Reliability Report RR001116CS6080
IPC – RELIABILITY - CASTELLETTO
Version 1.0 Page 2/13
Table of Contents
1 APPLICABLE AND REFERENCE DOCUMENTS ....................................................................... 3
2 RELIABILITY EVALUATION overview ........................................................................................ 4
2.1 Objectives ........................................................................................................................................ 4
2.2 Conclusion ....................................................................................................................................... 4
3 Device Characteristics ............................................................................................................... 5
3.1 Device description ............................................................................................................................ 5
3.1.1 Pin connection ................................................................................................................................................... 5
3.1.2 Bonding diagram ............................................................................................................................................... 5
3.1.3 Package outline/Mechanical data ..................................................................................................................... 6
3.2 Traceability ...................................................................................................................................... 7
4 Tests results summary ............................................................................................................... 8
4.1 Test plan and results summary of UA50 with XD lead frame strip ....................................................... 8
4.2 Test plan and results summary of UA50 with HD lead frame strip ....................................................... 9
5 Tests Description & detailed results ........................................................................................... 10
5.1 Die oriented tests ........................................................................................................................... 10
5.1.1 High Temperature Operating Life .................................................................................................................... 10
5.1.2 Early Life Failure Rate ..................................................................................................................................... 10
5.2 Package oriented tests ................................................................................................................... 11
5.2.1 Pre-Conditioning .............................................................................................................................................. 11
5.2.2 High Temperature Storage .............................................................................................................................. 11
5.2.3 Thermal Cycles ............................................................................................................................................... 11
5.2.4 Autoclave ......................................................................................................................................................... 11
5.2.5 Temperature Humidity Bias ............................................................................................................................. 12
5.2.6 Power Temperature Cycling ............................................................................................................................ 12
5.3 Electrical Characterization Tests ..................................................................................................... 13
5.3.1 Latch-up........................................................................................................................................................... 13
5.3.2 E.S.D. .............................................................................................................................................................. 13
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1 APPLICABLE AND REFERENCE DOCUMENTS
Document reference Short description AEC-Q100 : Stress test qualification for integrated circuits 0061692 : Reliability tests and criteria for qualifications
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2 RELIABILITY EVALUATION OVERVIEW
2.1 Objectives
This report contains the reliability evaluation of UA50 device diffused in CATANIA M5 and assembled in HSOP 8L in AMKOR ATP1 PHILIPPINES, according to the AEC-Q100 (Grade1) specifications, in the overall plan of the S08ExpPad with XD lead frame strip qualification. According to Reliability Qualification Plan, below is the list of the trials performed: Package Oriented Tests
Preconditioning
Temperature Cycling
Power Temperature Cycling
Autoclave
2.2 Conclusion
Taking in account the results of the trials performed the UA50 diffused in CATANIA M5 and assembled in HSOP 8L in AMKOR ATP1 PHILIPPINES can be qualified from a reliability viewpoint.
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3 DEVICE CHARACTERISTICS
3.1 Device description
3.1.1 Pin connection
3.1.2 Bonding diagram
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3.1.3 Package outline/Mechanical data
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3.2 Traceability
Wafer fab information
Wafer fab manufacturing location CATANIA M5
Wafer diameter 8 inches
Wafer thickness 280 µm
Silicon process technology BCD6S
Die finishing back side Cr/Ni/Au
Die size 1909x1587 µm
Bond pad metallization layers AlCu
Passivation TEOS+SiON+Polyimide
Metal levels 4
Assembly Information
Assembly plant location AMKOR ATP1 PHILIPPINES
Package description HSOP 8L
Die pad size 2.413x3.099 mm
Molding compound Sumitomo G600
Wires bonding materials/diameters Au/1.2 mils
Die attach material Ablebond 8290
Lead solder material Sn
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4 TESTS RESULTS SUMMARY
4.1 Test plan and results summary of UA50 with XD lead frame strip
Package Oriented Tests
Test Method Conditions Failure/SS
Duration
Note Lot 1 Lot 2 Lot 3
PC Pre-Conditioning: Moisture sensitivity level 3
192h 30°C/60% - 3 reflow PBT 260°C 0/154 0/154 0/154
PTC Power Temperature Cycling
On Chip Boards Tj=-40°C÷150°C, Vcc=25V, Iout=0.7A 0/45 - - 1000h
AC Autoclave
PC before 121°C 2atm 0/77 0/77 0/77 96h
TC Temperature Cycling
PC before Temp. range: -50/+150°C 0/77 0/77 0/77 1000cy
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4.2 Test plan and results summary of UA50 with HD lead frame strip
Die Oriented Tests
Test Method Conditions Sample/Lots
Number of lots
Duration Results
HTOL High Temperature Operating Life
On Chip Boards Tj=150°C, Vcc=20V, Iout=3,5A (Max) 77 3 1000h PASSED
THB Temperature Humidity Bias
On Chip Boards Ta=85°C 85% RH, Vcc=38V 77 3 1000h PASSED
PTC Power Temperature Cycling
On Chip Boards Tj=-40°C÷150°C, Vcc=25V, Iout=0.7A 45 1 1000h PASSED
ELFR Early Life Failure Rate
Tj=150°C Vcc=25V, Iout=0,35A
800 3 1000h PASSED
Package Oriented Tests Test Method Conditions Sample/
Lots Number of lots
Duration Results
PC Pre-Conditioning: Moisture sensitivity level 3
192h 30°C/60% - 3 reflow PBT 260°C 180 3 PASSED
AC Autoclave
PC before 121°C 2atm 77 3 96h PASSED
TC Temperature Cycling
PC before Temp. range: -50/+150°C 77 3 1000cy PASSED
HTSL High Temperature Storage Life
No bias Tamb=150°C 77 1 1000h PASSED
Electrical Characterization Tests Test Method Conditions Sample/
Lots Number of lots
Duration Results
ESD Electro Static Discharge
Human Body Model +/- 2kV 3 1 PASSED
Charge Device Model
+/- 500V +/- 750V on corner pins
3 1 PASSED
LU Latch-Up
Over-voltage and Current Injection
Tamb=125°C Jedec78 – Level B
6 1 PASSED
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5 TESTS DESCRIPTION & DETAILED RESULTS
5.1 Die oriented tests
5.1.1 High Temperature Operating Life
This test is performed like application conditions in order to check electromigration phenomena, gate oxide weakness and other design/manufacturing defects put in evidence by internal power dissipation. The read-outs flow chart is the following:
Initial testing @ Ta=-40°C/25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000hrs) @ Ta=-40°C/25°C/125°C
5.1.2 Early Life Failure Rate
This test is to evaluate the defects inducing failure in early life. The device is stressed in biased conditions at the max junction temperature. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Final Testing (24 hrs) @ Ta=25°C/125°C
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5.2 Package oriented tests
5.2.1 Pre-Conditioning
The device is submitted to a typical temperature profile used for surface mounting, after a controlled moisture absorption. The scope is to verify that the surface mounting stress does not impact on the subsequent reliability performance. The typical failure modes are "pop corn" effect and delamination. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C.
Final Testing @ Ta=25°C/125°C
5.2.2 High Temperature Storage
The device is stored in unbiased condition at the max. temperature allowed by the package materials, sometimes higher than the max. operative temperature. The scope is to investigate the failure mechanisms activated by high temperature, typically wire-bonds solder joint ageing, data retention faults, metal stress-voiding The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
5.2.3 Thermal Cycles
The purpose of this test is to evaluate the thermo mechanical behavior under moderate thermal gradient stress. The read-outs flow chart is the following:
Initial testing @ Ta=125°C.
Check at 500 cycles @ Ta=25°C
Final Testing (1000 cycles) @ Ta=125°C TEST CONDITIONS:
Ta= -50°C to +150°C(air)
5.2.4 Autoclave
The purpose of this test is to point out critical water entry path with consequent corrosion phenomena related to chemical contamination and package hermeticity. The read-outs flow chart is the following:
Initial testing @ Ta=25°C.
Final Testing (96hrs) @ Ta=25°C. TEST CONDITIONS:
P=2.08 atm
Ta=121°C
test time= 96 hrs
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5.2.5 Temperature Humidity Bias
The test is addressed to put in evidence problems of the die-package compatibility related to phenomena activated in wet conditions such as electro-chemical corrosion. The device is stressed in static configuration approaching some field status like power down. Temperature, Humidity and Bias are applied to the device in the following environmental conditions => Ta=85°C / RH=85%. Input pins to Low / High Voltage (alternate) to maximize voltage contrast. Test Duration 2000 h. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168 and 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
5.2.6 Power Temperature Cycling
This test simulates typical power automotive application. The test is addressed mainly to focus die-attach and wire bonding problems in all the temperature stress changes. Combined stress performing an HTOL stress while the ambient temperature is cycling between –40 to +110°C (Tj=150°C) with the DUT switched alternatively ON/OFF (5min. each) in asynchronous mode with respect the ambient temperature change, (1 cycle: 10’ @ stress Temp. / 20’ to change Temperature). The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Check at 168, 500hrs @ Ta=25°C
Final Testing (1000 hrs) @ Ta=25°C/125°C
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5.3 Electrical Characterization Tests
5.3.1 Latch-up
This test is intended to verify the presence of bulk parasitic effects inducing latch-up. The device is submitted to a direct current forced/sinked into the input/output pins. Removing the direct current no change in the supply current must be observed. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
Latch-UP trial @ Ta=125°C
Final Testing @ Ta=25°C/125°C Stress applied:
condition NEG. INJECTION POS. INJECTION OVERVOLTAGE
IN low -10mA +100mA
1.5 x VDD or MSV or AMR, whichever is less
IN high -10mA +100mA
1.5 x VDD or MSV or AMR, whichever is less
5.3.2 E.S.D.
This test is performed to verify adequate pin protection to electrostatic discharges. The read-outs flow chart is the following:
Initial testing @ Ta=25°C/125°C
ESD discharging @ Ta=25°C
Final Testing @ Ta=25°C/125°C TEST CONDITIONS:
o Human Body Model ANSI/ESDA/JEDEC STANDARD JES001 CDF-AEC-Q100-002
o Charge Device Model ANSI/ESD STM 5.3.1 ESDA – JEDEC JESD22-C101 CDF-AEC-Q100-011