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Founded in 1995, GSI Technology, Inc. is a leading provider of high performance semiconductor memory solutions for military, medical, automotive and other applications. *Alpha character at the end of the part number denotes qualification nomenclature (S = Engineering Sample; V = Class-V; Q = Class-Q.) *Alpha character at the end of the part number denotes qualification nomenclature (S = Engineering Sample; V = Class-V; Q = Class-Q.) GSI currently offers Rad-Hard products from the SigmaQuad-II+, Synchronous Burst, and NBT families. For less robust applications, GSI also offers Radiation-Tolerant SigmaQuad-II+ SRAMs. Devices are qualified to meet requirements of Aerospace and Defense customersMilitary Temperature – 55 Deg Cel to +125 Deg Cel Class-Q and Class-V levels Speeds up to 350 MHz JEDEC-standard Pinout and Package 40nm Technology Our Innovative NEW line of radiation-Hardened Military Temperature SRAMs: *Also available in Radiation-Tolerant parts. GSI P/N Density Config Voltage 165 BGA CCGA (CE) LGA (LE) ODT Rad-Tolerant SigmaQuad-II+ TM 288Mb 144Mb 72Mb 8M x 36 16M x 18 4M x 36 8M x 18 2M x 36 4M x 18 Weak/ Strong Weak/ Strong Weak/ Strong V DD —1.8 V V DDQ —1.5 V/1.8 V V DD —1.8 V V DDQ —1.5 V/1.8 V V DD —1.8 V V DDQ —1.5 V/1.8 V GS82582QT37yy-### GS82582QT19yy-### GS81302QT37yy-### GS81302QT19yy-### GS8662QT37yy-### GS8662QT19yy-### GSI P/N Density Config Voltage 165 BGA LBGA (RE) ODT Rad-Tolerant SigmaQuad-II+ TM 288Mb 144Mb 72Mb 8M x 36 16M x 18 4M x 36 8M x 18 2M x 36 4M x 18 Weak/ Strong Weak/ Strong Weak/ Strong V DD —1.8 V V DDQ —1.5 V/1.8 V V DD —1.8 V V DDQ —1.5 V/1.8 V V DD —1.8 V V DDQ —1.5 V/1.8 V GS82582QT37yy-### GS82582QT19yy-### GS81302QT37yy-### GS81302QT19yy-### GS8662QT37yy-### GS8662QT19yy-### GSI P/N Density Config Voltage 100 QFP Rad-Hard No Bus Turnaround 144Mb 72Mb 36Mb 4M x 36 8M x 18 2M x 36 4M x 18 VDD—2.5 V/3.3 V VDDQ—2.5 V/3.3 V VDD—2.5 V/3.3 V VDDQ—2.5 V/3.3 V VDD—2.5 V/3.3 V VDDQ—2.5 V/3.3 V GS81302Z36yy-###a GS81302Z18yy-###a GS8680Z36yy-###a GS8680Z18yy-###a GS8360Z36yy-###a GS8360Z18yy-###a GSI P/N Density Config Voltage 100 QFP Rad-Hard Synchronous Burst 144Mb 72Mb 36Mb 4M x 36 8M x 18 2M x 36 4M x 18 VDD—2.5 V/3.3 V VDDQ—2.5 V/3.3 V VDD—2.5 V/3.3 V VDDQ—2.5 V/3.3 V VDD—2.5 V/3.3 V VDDQ—2.5 V/3.3 V GS8130236yy-###a GS8130218yy-###a GS868036yy-###a GS868018yy-###a GS836036yy-###a GS836018yy-###a 1M x 36 2M x 18 QFP (CQ) QFP (CQ) 1M x 36 2M x 18 Speed 333/250 MHz, Pipeline tQK (ns) 2.5 Speed 333/250 MHz, Pipeline tQK (ns) 2.5 Burst Length 2, Read Latency 2.0, Speed 350/250 MHz Burst Length 2, Read Latency 2.0, Speed 350/250 MHz Radiation-Hardened and Radiation-Tolerant SRAMs Timing Designer Technical Notes

Radiation-Hardened and Radiation-Tolerant SRAMs...Burst Length 2, Read Latency 2.0, Speed 350/250 MHz Radiation-Hardened and Radiation-Tolerant SRAMs Technical Notes Timing Designer

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Page 1: Radiation-Hardened and Radiation-Tolerant SRAMs...Burst Length 2, Read Latency 2.0, Speed 350/250 MHz Radiation-Hardened and Radiation-Tolerant SRAMs Technical Notes Timing Designer

Founded in 1995, GSI Technology, Inc. is a leading provider of high performance semiconductor memory solutions for military, medical, automotive and other applications.

*Alpha character at the end of the part number denotes qualification nomenclature (S = Engineering Sample; V = Class-V; Q = Class-Q.)

*Alpha character at the end of the part number denotes qualification nomenclature (S = Engineering Sample; V = Class-V; Q = Class-Q.)

• GSI currently offers Rad-Hard products from the SigmaQuad-II+, Synchronous Burst, and NBT families.

• For less robust applications, GSI also offers Radiation-Tolerant SigmaQuad-II+ SRAMs.

• Devices are qualified to meet requirements

of Aerospace and Defense customers• • Military Temperature – 55 Deg Cel to +125 Deg Cel

• Class-Q and Class-V levels

• Speeds up to 350 MHz

• JEDEC-standard Pinout and Package

• 40nm Technology

Our Innovative NEW line of radiation-Hardened Military Temperature SRAMs:

*Also available in Radiation-Tolerant parts.

GSI P/N Density Config Voltage165 BGA

CCGA(CE)

LGA(LE)

ODT

Rad-Tolerant SigmaQuad-II+TM

288Mb

144Mb

72Mb

8M x 36 16M x 18

4M x 368M x 18

2M x 364M x 18

Weak/Strong

Weak/Strong

Weak/Strong

VDD—1.8 V VDDQ—1.5 V/1.8 V

VDD—1.8 V VDDQ—1.5 V/1.8 V

VDD—1.8 V VDDQ—1.5 V/1.8 V

GS82582QT37yy-###GS82582QT19yy-###

GS81302QT37yy-###GS81302QT19yy-###

GS8662QT37yy-###GS8662QT19yy-###

GSI P/N Density Config Voltage165 BGA

LBGA(RE)

ODT

Rad-Tolerant SigmaQuad-II+TM

288Mb

144Mb

72Mb

8M x 3616M x 18

4M x 368M x 18

2M x 364M x 18

Weak/Strong

Weak/Strong

Weak/Strong

VDD—1.8 V VDDQ—1.5 V/1.8 V

VDD—1.8 V VDDQ—1.5 V/1.8 V

VDD—1.8 V VDDQ—1.5 V/1.8 V

GS82582QT37yy-###GS82582QT19yy-###

GS81302QT37yy-###GS81302QT19yy-###

GS8662QT37yy-###GS8662QT19yy-###

GSI P/N Density Config Voltage

100 QFP

Rad-Hard No Bus Turnaround

144Mb

72Mb

36Mb

4M x 368M x 18

2M x 364M x 18

VDD—2.5 V/3.3 VVDDQ—2.5 V/3.3 V

VDD—2.5 V/3.3 VVDDQ—2.5 V/3.3 V

VDD—2.5 V/3.3 VVDDQ—2.5 V/3.3 V

GS81302Z36yy-###aGS81302Z18yy-###a

GS8680Z36yy-###aGS8680Z18yy-###a

GS8360Z36yy-###aGS8360Z18yy-###a

GSI P/N Density Config Voltage

100 QFP

Rad-Hard Synchronous Burst

144Mb

72Mb

36Mb

4M x 368M x 18

2M x 364M x 18

VDD—2.5 V/3.3 VVDDQ—2.5 V/3.3 V

VDD—2.5 V/3.3 VVDDQ—2.5 V/3.3 V

VDD—2.5 V/3.3 VVDDQ—2.5 V/3.3 V

GS8130236yy-###aGS8130218yy-###a

GS868036yy-###aGS868018yy-###a

GS836036yy-###aGS836018yy-###a

1M x 362M x 18

QFP(CQ)

QFP(CQ)

1M x 362M x 18

Speed 333/250 MHz, Pipeline tQK (ns) 2.5

Speed 333/250 MHz, Pipeline tQK (ns) 2.5

Burst Length 2, Read Latency 2.0, Speed 350/250 MHz

Burst Length 2, Read Latency 2.0, Speed 350/250 MHz

Radiation-Hardened and Radiation-Tolerant SRAMs

Timing DesignerTechnical Notes

Page 2: Radiation-Hardened and Radiation-Tolerant SRAMs...Burst Length 2, Read Latency 2.0, Speed 350/250 MHz Radiation-Hardened and Radiation-Tolerant SRAMs Technical Notes Timing Designer

Nexcomm Asia Pte Ltd13 Braddell Tech, #06-04, Toa Payoh, Lorong 8, Singapore 319261Tel: +65 6891 2335 Fax: +65 6766 8117

HyderabadM : +91 99639 92277

Delhi M: +91 95912 31147

Pune M: +91 88056 66002

BengaluruM: +91 80 4203 2277

MalaysiaTel: +03 7652 2813

ChinaTel: +86 13923 707318

IndonesiaTel: +6221 2934 9381

Soho VietnamHP: 0905474745

Soho MayanmarTel: 09 400467496

[email protected]

www.nexcomm-asia.com

Radiation-Tolerant Memories

Radiation Hardening QML-V •Certified Independent Lab DPA (Destructive Physical Analysis) Testing •Certified Independent Lab Outgassing Testing •Total Ionizing Dose (TID) Testing •Single Event Latchup (SEL) Testing •Plastic Package – 165p LBGA

Radiation-Hardened Memories

BURST & NBT SRAMs100 Ceramic QFP

PL/FT

SIGMAQUAD-II+165 CCGA/165 LGA

RL = 2.0

228Mb

144Mb

72Mb

36Mb

GS81320(z)18/36333 MHz/250MHz

GS8680(z)18/36333 MHz/250MHz

GS8360(z)18/36333 MHz/250MHz

GS82612QT(z)19/37350 MHz/250MHz

GS81332QT(z)19/37350 MHz/250MHz

GS8692QT19(z)19/37350 MHz/250MHz

Military Temp Range (Tj) = -55C to +125C

BURST & NBT SRAMs100 TQFP

PL/FT

SIGMAQUAD-II+165 BGARL = 2.0

228Mb

144Mb

72Mb

36Mb

GS81280(z)18/36333 MHz/250MHz

GS8640(z)18/36333 MHz/250MHz

GS8320(z)18/36333 MHz/250MHz

GS82582QT19/37350 MHz/250MHz

GS81302QT19/37350 MHz/250MHz

GS8662QT(z)19/37350 MHz/250MHz

Military Temp Range (Tj) = -55C to +125C

SigmaQuad-II+TM Controller IP For FPGAs

• Available for Free to GSI Customers

• Available for use with the following FPGAs:

• Xilinx: Virtex/Kintex 7

• Altera: Stratix 5

• Microsemi RTG4 (forthcoming)

• Microsemi PolarFire (forthcoming) Resources / Deliverables:• Source Code (Verilog) & Associated User Guide

• Design Constrain File

• Simulation Models

• Reference Board & associated User Guide, Schematics, Gerber Files, and BOM (upon request)

Rad-Hard vs. Rad-Tolerant

Densities

Speed Bins

Configurations

Package

Total Ionizing Dose (TID)

Single Event Latchup Immunity

288Mb/144Mb/72Mb (SigmaQuad)144Mb/72Mb/36Mb (SyncBurst & NBT)

350 MHz/250 MHz (SigmaQuad)333MHz/250 MHz (SyncBurst & NBT)

X18/x36

165 CCGA or LGA (SigmaQuad)100 Ceramic QFP (SyncBurst & NBT)

165 LBGA (SigmaQuad)100 TQFP (SyncBurst & NBT)

>300krads(Si) >50krads(Si)

>80 MeV.cm2/mg (125°C) >42.2 MeV.cm2/mg (100°C)

Rad-Hard Rad-Tolerant