Upload
vankhanh
View
231
Download
0
Embed Size (px)
Citation preview
RadiationHardSiliconParticleDetectorsforPhase-IILHCTrackers
AgnieszkaObłąkowska-MuchaAGHUST Kraków
onbehalf oftheRD50Collaboration
14thTopicalSeminaronInnovativeParticleandRadiationDetectors3- 6October2016 Siena,Italy
Outline
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 2
RD50
1. Introduction.2. ThetimelineofLHCandexperiments.3. Radiationinducedchangesinpropertiesofthesilicontracking
detectors.4. Developmentofnewstructures:• 3DPixels,• HVCMOS,• LGAD.5. Measurementtechnique:TCT.6. Newirradiationcenter– IRRAD2.
Simulationof400proton-proton collisionsinjustone25nsbunchcrossingattheHL-LHC
HL-LHCTimeline
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 3
RD50
4. Twomajorshutdowns (LS2 &LS3)– mainacceleratoranddetectorupgrades.
1. LHCwasplanedfor10yearsofoperation(ℒ = 300𝑓𝑏()), i.e.till theendofRun3(2023).
2. Itwasassumedthattracking detectorswill havetobereplacedduetoradiationdamageandageing (ornewphysicsprogram).
3. BasedonexperiencefromRunI, withnewtechnologies inmind, it’stheright timetodesign themNOW!
Experiments - Phase 1Upgrade
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 4
RD50
Phase 1Upgrade(24months):• CMS- Pixeldetectorreplacement,• LHCb- VELOstripdetectorreplacementbypixels,new strip UT.
5.1.Upgradeofthesilicon tracking detector.
Experiments - Phase 2Upgrade
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 5
RD50
Phase2Upgrade(30months):• LHC:newquadrupoles inthecollision region,crab cavities,• CMS:newtracker, HGCAL,• ATLAS:replacementoftheInnerDetector,• LHCbmajordetectorupgradeduring LS4
5.2.Upgradeofthesilicon tracking detector.
HighLeveloffluence@HL-LHC
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 6
RD50
1. LHCwillproducecollisionsatarateofabout 5·109s-1.2. Theannual dose at HL-LHCwill besimilar tothetotal dose until LS3:
• endofRunIII(300fb-1)Φ~2·1015 neq cm-2
• HL-LHC(3000fb-1)Φ~2·1016 neq cm-2
4. ThemainobjectiveforRD50isdevelopmentofradiationhardsemiconductordetectorsforHL-LHC.5. Theradiationhardnessabove1016 neq cm-2 (whilemaintainingtheS/Nratio>10)isrequiredwithfast
signalcollectionandaffordablecost.CurrentLHCdetectorcanoperateupto fluence 1015 neq cm-2
6. DefectinducedbyparticleradiationandtheirinfluenceondetectorperformanceareofmajorinteresttoRD50.
1fb-1 3000fb-1
Firstradiationproblems
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 7
RD50
TheLHCbsiliconvertexdetectorwill not bereplaced.ThemainVELOupgrade (pixels)isplannedforLS2(2018).
VELOreplacement is currentlyondisplayat LHCbPit.
The newinnermost layerofATLASInnerTrackerwasinstalled(IBL)inside thePixel Detector during LS1.
Thesourceofradiationdamage
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 8
RD50
1. Themainsourceofradiationisfromparticlesproducedinsoft p-pinteractions(neutrons,pions,protons)andsecondaryinteractionswiththedetectormaterial.
2. Non-IonizingEnergyLoss(Ek >15eV)ofimpingingparticlemaydisplaceasiliconatomfromthelattice.
3. Creationofdefectsdependsonthekindofparticleanditsenergy.4. Displacementsofsiliconatomsproducevacanciesandinterstitials.
5. Crystalimpuritiesinteractwithdefectscausingthechangeinelectricalpropertiesofdetector.
[Mik
a H
uhtin
enN
IMA
491
(200
2) 1
94]10MeVprotons 24GeV/cprotons 1MeVneutrons
Simulation of radiation 1014 particles/cm2
Pointdefects+clusterdefects+impurities=degradationofthedetector
Radiationdamageeffects(1)
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 9
RD50
Radiationinducedchangesinpropertiesandstructuresofthesilicontrackingdetectors are observed as...
macroscopic effects… causedby … microscopicdefects
10-1 100 101 102 103
Φeq [ 1012 cm-2 ]
1
510
50100
5001000
5000
Ude
p [V
] (d
= 3
00µm
)
10-1
100
101
102
103
| Nef
f | [
1011
cm
-3 ]
≈ 600 V≈ 600 V
1014cm-21014cm-2
"p - type""p - type"
type inversiontype inversion
n - typen - type
[Data from R. Wunstorf 92]
1. Changeofdepletionvoltage: ▸ duetochargedenergy levelsinthedepletedregion (mostproblematic).
Defectschangetheeffectivedopingconcentrationandhasimpactonbiasvoltageusedtofullydepletethesensor.Significantprogressonidentifyingdefects wasperformedwithin RD50group.Duetoexcessofacceptor-likedefectsanddonorremoval(V-Pdefect),initiallyn-typesensorchangesintop-typesensor(atLHCfirstobservedinLHCbVELO).
Valence Band
Conduction Band
Appl.Phys.Lett.82,2169(2003),Nucl.Instr.andMeth.inPhys.Res.A611(2009)52,Appl.Phys.Lett.92(2008)024101;)J.Appl.Phys.117(2015)164503;Nucl. Instr. andMeth. inPhys.Res. A612,525-529,2010.
Radiationdamageeffects(2)
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 10
RD50
2. Increaseof leakagecurrent:▸ bulkcurrentdueto
generation/recombination centers inthemid-gap.
1011 1012 1013 1014 1015
Φeq [cm-2]10-6
10-5
10-4
10-3
10-2
10-1
ΔI /
V
[A/c
m3 ]
n-type FZ - 7 to 25 KΩcmn-type FZ - 7 KΩcmn-type FZ - 4 KΩcmn-type FZ - 3 KΩcm
n-type FZ - 780 Ωcmn-type FZ - 410 Ωcmn-type FZ - 130 Ωcmn-type FZ - 110 Ωcmn-type CZ - 140 Ωcm
p-type EPI - 2 and 4 KΩcm
p-type EPI - 380 Ωcm
[M.Moll PhD Thesis][M.Moll PhD Thesis]
Valence Band
Conduction Band
holes
electrons
Radiationinducedchangesinpropertiesandstructuresofthesilicontrackingdetectors are observed as...
macroscopic effects… causedby … microscopicdefects
Defectsareabletocaptureandemitelectronsandholes– sourceof the reverse-biascurrent.Higher noise andpower consumption.
Radiationdamageeffects(3)
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 11
RD50
3. Decreaseofchargecollectionefficiency:
▸ duetodamageinduced trappingcenters.
Valence Band
Conduction Band
holes
electrons
CMSTrackerJIN
ST9(2
014)12
Radiationinducedchangesinpropertiesandstructuresofthesilicontrackingdetectors are observed as...
macroscopic effects… causedby … microscopicdefects
Defectsactasatrappingcenters- electronsandholesarere-emittedwithsometimedelay.Thesignalchargeistrappedandmaybereleasedtoolatefor25nsread-out.Thisisthemostseriousproblemfordetectorirradiatedwithfluenceabove1015 neqcm-2.
CallRD50incase ofradiationdamageproblem…
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 12
RD50
RD50 - Radiation hard semiconductor devices for very high luminosity colliders.1.Formed in2001,approvedbyCERNin2002.2.Themainobjectiveis:Developmentofradiationhardsemiconductordetectorsfortheluminosityupgradeof
theLHCto7.5·1034cm-2s-1.3.Challenges:
• radiation hardnessupto1016 cm-2required,• fast signalcollection– planfor 10nsbunchcrossing,• lowmasstoreducemultiple scatteringclosetointeractionpoint,• affordable cost.
4.ThecurrentactivitiesodRD50include:a) identifying thedefectsthroughdedicatedmeasurementtechniques (DLTS,TSC,TCT)
ormonitoring themacroscopicchangesinHEPexperiments.b) work outhowtogetridofdamage(oravoidit)– newtechnologies,newstructures
(3Dsensors,HVCMOS, LGAD, simulation (FLUKA,GEANT4,TCAD…).c) testthesolution:
• neutron exposition innuclearreactor,• proton irradiationatcyclotronsandsynchrotrons,• newdedicatedirradiationcenter@CERN.
d) incorporatethefeedbackfromexperiments.
RD50Organisation
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 13
RD50
RD50 - Radiation hard semiconductor devices for very high luminosity colliders
Co-SpokespersonsGianluigi CasseandMichaelMoll
(LiverpoolUniversity,UK(CERNEP-DT)&FBK-CMM,Trento,Italy)
Defect/MaterialCharacterization
IoanaPintilie(NIMPBucharest)
DetectorCharacterizationEckhartFretwurst(HamburgUniversity)
FullDetectorSystems
GregorKramberger(LjubljanaUniversity)
• Characterizationofmicroscopicpropertiesofstandard-,defectengineeredandnewmaterialspre- andpost-irradiation
• DLTS,TSC,….• SIMS,ESR,…• NIEL(calculations)• WODEAN:Workshop
onDefectAnalysisinSiliconDetectors(I.Pintilie)
•Characterizationofteststructures(IV,CV,CCE,TCT,.)•Developmentandtestingofdefectengineeredsilicondevices•EPI,MCZandothermaterials•NIEL(experimental)•Devicemodeling•Operationalconditions•Commonirradiations•Waferprocurement(M.Moll)• DeviceSimulations(--)• Acceptorremoval(Kramberger)
•3Ddetectors•Thindetectors•Costeffectivesolutions•Othernewstructures•Detectorswithinternalgain(avalanchedetectors)
• LGAD:LowGainAvalancheDet.•DeepdepletedAvalancheDet.•SlimEdges•HVCMOS•3D(R.Bates)• LGAD(S.Hidalgo)• SlimEdges(V.Fadeyev)
• LHC-liketests• LinkstoHEP(LHCupgrade,FCC)• LinkselectronicsR&D• Lowrhostrips•Sensorreadout(Alibava)•Comparison:- pad-mini-fulldetectors- differentproducers
•RadiationDamageinHEPdetectors
•Testbeams(M.Bomben &G.Casse)
NewStructures
GiulioPellegrini(CNMBarcelona)
M.Moll September2016
CollaborationBoardChair&Deputy:G.Kramberger (Ljubljana)&J.Vaitkus (Vilnius),Conferencecommittee:U.Parzefall (Freiburg)CERNcontact:M.Moll (EP-DT),Secretary:V.Wedlake (EP-DT),Interimbudgetholder&GLIMOS:M.Moll (EP-DT)
Advanceddetectordesign– 3Dpixel sensors
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 14
RD50
1. Currentlyawellknowntechnology (S.I.Parkeretal.,NIMA395(1997)328).
2. 3DpixelsensorsareinstalledinATLASIBL,AFP,CMSTotem.3. Theyaredesignedasverticalnarrowcolumnarpandnelectrodespenetrating thesiliconsubstrate.
3Dpixels
3.Advantages:• diameter:10 µm,distanceL:50– 100 µm(smalldrift
distance,lesstrapping),• lowerdepletionvoltage:10-200V(lower power),
thinner detectorspossible,• fastsignal formation,• radiationhard,• activeorslimedgestechnology.
4.Problems:• Nonuniformspatialresponse (electrodesareinefficient regions).• Highercapacitance,highernoise.• Complicatedfabricationtechnology (time,cost,yield).
3DPixels/Strips
Planarpixels
3Dpixel sensors forLHC
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 15
RD50
ForLHCafewdeviceswereprojectedandtestedforradiationhardness:
• 230μm thicksensorsbyCNMandFBK• FEI4s:50x250μm 2E,67μm inter-el.distance
CNM3DpixelsforIBL
Double sided (DDTC) technique:• n+ and p+ columns are etched from the two
sides of the sensor wafer.• Slimedges(200μm)
3Dsensorsirradiated (protons,neutrons, pions,electrons) uptoIBLfluence5·1015 neqcm-2
Radiationhardnessupto5·1015neqcm-2 established:
EfficiencyforCNMsensorsreached99%.
ATLASIBLC
oll,JIN
ST7(2012)P11010
3Dpixel sensors forHL-LHC
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 16
RD50
Developmentofnewgeneration3DpixelsensorsforHL-LHC:• radiationhardnessup to2·1016 neqcm-2.• reducedpixelsize:50×50𝜇𝑚0 or25×100𝜇𝑚0 .• smallinter-electrodedistance(lesstrapping).• reducedthickness100 − 150𝜇𝑚(smallleakagecurrent).First prototypeofnewgeneration3Dpixelsfinished (January2016).
Threedifferent technologies tested:
singlesided,activeedge doublesided
3Dpixel sensors forHL-LHC- prospects
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 17
RD50
Thesignalefficiencyisabout60-70%at 5·1015 neqcm-2 and30%at almost1016 neqcm-2 withnot muchincreaseof𝑉5678.Signalefficiencywasimprovedwithdecreasingelectrodedistance.
[1]ATLASIBLCollaboration,submittedtoJINST(2012)[2]M.Koehleretal.NIMA659(2011)272[3]C.DaVia,etal.,NIMA604(2009)505CompilationbyC.DaVia
RD50project:JointMPWpixelrunforATLAS,CMS,LHCb.
Motivations:1.Manufacturesmallerareapixelsonthinsensors.2.Study of radiationhardness.
Lope
z Pa
zet
al..
RD50workshop2015,CER
N
Joint3DMPWpixel run
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 18
RD50
A
B C
C
D
E
F
F
G
G
GG
GGHL L L
M
M
N O N
IIIIII
Testofdifferentconfigurations forvariousreadoutchipsandpitchsize:
• A:standardFe-I4• B:25x100um2("25x500"1E,with 3DGR- alaGP).• C:50x50um2withtherestconnected toGNDwith3DGR• D:25x100um2 (2E- version4x100+gridtoGND- alaGF)• E:50x50um2 withtherestconnected toGNDwithout3DGR• F:FEI3device:x50x50um2withresttoGNDwith3DGR• G:ROC4sens50x50um2• H:PSI46dig• IFERMILABRDROC30x100um2• L:Velopix55x55um2• M:Strip50x50um2• MStrip25x100um2• OStrip30x100um2f
JointMulti ProjectWafer pixelrun forATLAS,CMS,LHCb.
G.PellegriniRD5
0Worksho
pDec201
5
50µm 35µm
Alsosingle sided technology:• 50𝜇𝑚 thickdetectorswith SOI supportwafer(350𝜇𝑚 ),
• Possibletothindownthedetectors.• 5𝜇𝑚 holediameter.• Detectortested,good I-V,• more complicated technology
Newtechnology–HVCMOS
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 19
RD50
HighVoltageCMOS• n-wellsareimplantedinlowresistivity(~10Ωcm)p-typesubstrate andplay roleofelectrode implant,
• biased with60Vbutallowsonlyshallow(10 −20𝜇𝑚)depletionzone,signal1-2kel.
• thinactivelayer,• lowdriftdistance,small drift time (fastcollection),• radiationhard(lesstrapping),
From
:S.Fenandez-P
erez,TW
EPP20
15
notdepleted
RD50startedtoworkonHV-CMOSdevices in2014withafocusoncharacterizingtheradiationdamage
• possible tousecapacitivecoupling throughglueinsteadofbump-bonding,• industrialprocessenableslargevolumeproduction inrelativelyshorttime,• bothpixelandstripdetectorpossible,• fullymonolithicdevicesdon’t requireabump-bonded read-out.
HVCMOS– signal collection
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 20
RD50
Highvoltageisusedtodepleteapartofthesubstrate:• Themainchargecollectionmechanism isdrift,• Partofthesignaloriginatesfromtheundepleted regionand
iscollectedbydiffusion,• Edge-TCTmeasurementsshoweddriftanddiffusion
component
M.Fernández
GarcíaRD
50W
orkshopNov
2014
driftdiffusion
Thechargecollectionprofilesofirradiatedsamplesshowquickdisappearanceofdriftconstituent.
HVCMOS– irradiationtests
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 21
RD50
Chargecollectionproperties studiedafterirradiationtohighneutron fluences withEdge-TCTtechniques.
AMS350𝑛𝑚 production, CHESS-1sensors• 2 mmx2 mmpassivesensor (400pixel)• Sr90 electrons forCCE,25nsshaping, 120V,TCT
AMS180𝑛𝑚 production, HV2FEI4• 100 µmx100µmpassivepixel,• IR-laser,5nsintegration
A.Affolder
etal.,2016JIN
ST11P04007
M. Fernández García 2016 JINST 11 P02016
• CCEdecreasesforfluenceup to2-5·1014 neqcm-2 duetodiffusion decrease.• Forhigher fluence thesignalisrisingduetoincreaseofactivevolume (acceptorremoval).• FinallyCCEdegradesduetomoreintensetrapping causedbyspacecharge.• Forfluence2·1016 neqcm-2 @ 80Vcharge collection is 90%ofsignal before irradiation!
Verypromising forhighradiationenvironments!
CHESS
Chargemultiplication inSidetectors
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 22
RD50
Chargemultiplication:• signallargerthanexpectedfromconventionalsilicondevicesobservedafterirradiation 2-5·1015 neqcm-2 ,
• irradiationcausesnegativespacechargeindetectorbulkthatincreasestheelectricfiled(>15V/µm),impacttheionisationwhichmanifeststhroughchargemultiplication,
• observedindifferenttypesofdevices(diode,strip,3D),atveryhighbiasvoltages,heavyirradiated,
• couldbebeneficialforsensorsandgiveextrasignal– usableforHL-LHC.
RD50project:exploitchargemultiplicationdetectors:• 1cmx1cm,n-in-pFZstripdetectors,
• LGADsensors(firstsegmentalsensorsonthinsubstrates).
• exploitthechargemultiplicationeffect,• fabricate,testandirradiatesensors,• simulateandpredict (TCAD),• measurewithTCTsetup.
M.Kohler,NIMA,659(2011),2
72–2813D
J.Langeetal,16thRD5
0Workshop,Barcelona
Aims:
LGAD
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 23
RD50
The LowGainAvalancheDetector(LGAD):anewconceptof siliconradiationdetectorwith intrinsicmultiplication ofthecharge.
Advantages:• higherchargecollectionefficiency,• shortdrifttime,• signalshorterandsteeperwhileretainingalargeamplitude
duetothemultiplicationmechanism.
Afterirradiation(reactorneutronsand800MeVprotons):• decreaseofchargecollection,
G.Kram
berger
etal.201
5JIN
ST10P0
7006
G.Kram
berger
RD50
Worksho
pJune
2014
Newtechnology– Gallium insteadofBoron or add Carbontoprevent Boron removal
• decreaseofmultiplication(beforeirradiationitwas3timeshigherthanstandarddiode),afterirradiationwithfluence2·1015 neqcm-2 thegainwaslost.
Measurementtechniques- TCT
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 24
RD50
EdgeTransientChargeTechnique:MethodofreconstructionofelectricfieldpioneeredbyLjubljanagroupandpromotedbyRD50.
• photonpulses fromaninfrared laserare directedtowardsthedetectoredge,perpendicular tothestripsandfocused totheregionbelowthereadoutstrip,electron-holepairsareproduced,
G.Kam
berger
etal.2014JINS
T9P10016
• scansacrossthedetectorthicknessenablesrelativemeasurementoftheinducedcurrentatgivendepth,extrapolaterisetime,driftvelocityandchargecollectionprofiles,
• finally,theelectricfieldcanbereconstructedbydeterminationofdriftvelocity.
Edge-TCTiswidelyusedidealtooltostudysubstrateproperties!
TCT- flashofresults
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 25
RD50
HV-CMOS – different structures:• irradiatedbyreactorneutronsandPSprotons,• chargeprofilesatdifferentdepth andvs.biasvoltage,• widthofchargecollection,• determination ofNeff
Results:• neutronirradiationupto2×10)<𝑛=>𝑐𝑚(0 - initialacceptorremoval,
• increaseofspacechargeandchargecollectionisdegradingwithfluence
G.Kramberger
etal.,2016JINS
T11P04007
AMSCHESS1chips(20Ωcm)
Scandirection
IgorM
andić,RD
50W
orkshop,June2016,Torino
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 26
RD50TCT-3DandLGADexample
Signal amplification instrip-LGAD
Iván
Vila,RD5
0Workshop,June2016
G.PellegriniRD5
0Worksho
pDec201
5
3Dpixels (CNM)–irradiatedbyreactorneutronswith5×10)<𝑛=>𝑐𝑚(0
IrradiationFacilities
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 27
RD50
RD50isespeciallyhelpful forirradiationofthesilicondevicesincyclotrons, synchrotrons,reactors,etc. (full listis here)• CERN – 24GeVprotons,1MeVneutrons,• UniversityofKarlsruhe (25MeVprotons)• Jožef StefanInstitute (neutrons)• PaulScherrer Institut (300MeV/cpions)…
IRRAD2 - newCERNproton irradiationfacility
§ MixedfieldproducedincavityafterC(50cm)- Fe (30cm)- Pb (5cm)‘target’(IRRAD2)
§ 24GeV/cprotonbeam(IRRAD1,IRRAD3,IRRAD5,…)
MauriceGlaser
RD50W
orkshopDe
c.2015
Typical:1x1016p/cm2(5days)-1
ProtonFacility(IRRAD)
IRRAD2
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 28
RD50
17Nov.2014:firstirradiationexperimentsinthenewIRRAD2!
EA-IRRAD upgradeproject:JointeffortofmanyCERNgroups.PH-DT,EN-MEF,EN-STI(coreteams),HSEand EN-HDO(ProjectSafety),DGS-RP,EN-CV(ventilation),EN-HE (transports),GS-ASE (accesscontrol),BE-BIand TE-CRG (IRRADcryogenicsystem),…
MauriceGlaser
RD50W
orkshopDe
c.2015
9irradiationtablesoperationalfromOct.1st 20156xRTirradiation(IRRAD3,7,9,13,17,19)2xwater-cooledcoldboxesdownto-25°C(IRRAD5,11)1xdedicatedtothecryogenicsetup(IRRAD15)
p+
ColdBoxes
Mixed-field Facility(CHARM)
30weeksofbeamtime in201528userteams from18 institutes /experiments/R&D’s>300samples(active/passive)>250dosimetersmeasured (Alfoils)
1×10)@𝑝/𝑐𝑚(0(5𝑑𝑎𝑦𝑠)()
Summary
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 29
RD50
1. Silicondetectorscurrently installedinLHCexperimentsneedtobereplacedby2023atthelatest.
2. Currenttechnologiesarenotsufficient towithstandfluenceatthelevelof10)@𝑛=>𝑐𝑚(0 .
3. RD50Collaborationhasbeenworkingon:• newtechnologies insiliconsensorsproduction andnewdesignsofdetectors,• descriptionofdefectsandmaterialcharacterization,• simulationofthestructuresandradiationeffects,• methodsofmeasurementsandtestofirradiateddevices.
4. RD50:• fundscommonprojectswithcooperationbetweenmember institutions,• helpsandsupports studyofsilicondetectorsperformed inLHCexperiments,• isaplatformwherepioneering researchesinnewtechnologies meetwiththefinalimplementation inhugeexperiments.
5. RD50recommends thestructurestobestudiedbyHighLuminosityLHCexperiments:• 3Dsensors(smalldrift time– lesstrapping,pixelorstripdetector),• HV-CMOS(industrial productionofpixel/strip detectors,low cost,low bias,low mass,rad
hard),• LGAD(sensorwithintrinsic gain),• Slim/activeedgesensorstoreducedead space oflower efficiency.
04.10.2016 A.Obłąkowska-Mucha(AGHUSTKraków)IPRD16Siena 30
RD50
26thRD50Workshop, June 2015
RD50isacommunityof282physicistandengineersfrom52institutes.