Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF

Quo Vadis Laser

Dr. Eckhard Meiners

General Manager

TRUMPF Laser Marking Systems AG

Buchs, December 2nd 2010

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 2

R&D Introduction Growth Maturity Saturation Decline Stage

Sale

s

Stages of the Product Life Cycle

(Qualitative Estimation)

CW Lasers

Ultra Short Pulse Lasers

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 3

R&D Introduction Growth Maturity Saturation Decline Stage

Sale

s

Stages of the Product Life Cycle

(Qualitative Estimation)

Disk Lasers

Diode Lasers

CO2 Lasers

Fiber LasersLamp-pumped

SSL

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 4

TRUMPF Business Unit Laser Technology

Machine Tools/

Power ToolsMedical SystemsElectronicsLaser Technology

TRUMPF Photonics,

Princeton, USA

TRUMPF Laser

Marking Systems AG,

Grüsch, CH

TRUMPF Laser

GmbH + Co. KG,

Schramberg

SPI Lasers,

Southampton, UK

TRUMPF Laser- und

Systemtechnik

GmbH, Ditzingen

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 5

CW Laser Concepts in Material Processing

LPSSL

CO2

Disk

Fiber

LPSSL

CO2

Diode

Disk

Fiber

LPSSL

CO2

20102000 2020…

What are the drivers for a

broadening or the

convergence of the

technology portfolio?

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 6

Drivers of the Technology Portfolio

1. Specialization of laser usage in the manufacturing world:

Applications drive special needs for beam characteristics.

- Brightness

- Wavelength

- Power

- Pulse width and pulse shape

2. Invest and TCO:

Cost is paramount, however, a more differentiated approach is needed.

Application-specific models will succeed.

- Invest

- Energy consumption

- Process efficiency and process cost (i.e. cutting gas consumption)

- Maintenance

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 7

Example: Cost and Complexity of 4kW cw System

ComplexityComplexity

Power Supply Pump Beam Shaping Beam delivery

Cost and performance of diodes will substantially impact system cost performance.

Competition of concepts will lead to specialized systems for individual power and

brightness levels.

Complexity Complexity

resonatorlow brightness

diode barsDisk

resonatorhigh brightness

diodesFiber

passive systemhigh brightness

diodesDiode

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 8

Example of Specialization at the Customer: Cutting

Thin sheet metal

cutting with SSL:

TruLaser 5030

Thick sheet metal

cutting with CO2-laser:

TruLaser 3030

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 9

Future Topic (1): High Power Ultrafast Lasers

Ultrafast lasers will become the new

workhorse:

- Kilowatt-class ultrafast lasers for

industrial production

- Modulation of pulse width and duration

- Modulation of brightness

Application fields:

- Mass production of lightweight structures

- Substitution of less energy efficient

processes

- Enhancement of existing and

established (laser) processes

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 10

Solar Cell Production: P1 Sribing of CI(G)S modules

Patterning of Molybdenum

Burr free

Melt free

No Delamination

Isolation (P1)

Spot diameter: 40 – 50 µm

Feed Rate: 6 – 8 m/s

ns

ps

Risse

Schmelze

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 11

Laser Specifications – Demands

-50 -40 -30 -20 -10 0 10 20

1028 1030 1032 1034Inte

nsity (

a.u

.)

Delay (ps)

Wavelength (nm)

TruMicro

5050

TruMicro

5250

TruMicro

5350

Mittlere

Leistung

50 W 30 W > 15 W

Wellenlänge 1030 nm 515 nm 343 nm

Pulsdauer < 10 ps < 10 ps < 10 ps

Max.

Pulsenergie

250 µJ 125 µJ > 75 µJ

Pulsfrequenz 200-800 kHz 200-800 kHz 200-800

kHz

Strahlqualität M ² < 1.3 M² < 1.3 M² < 1.3

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 12

Products – Patterning CI(G)S

TruMicro 5050 TruMicro 5250 TruMicro 5350

Average Power 50 W 30 W > 15 W

Wavelength 1030 nm 515 nm 343 nm

Pulse length < 10 ps < 10 ps < 10 ps

Max. Pulse energy 250 µJ 125 µJ > 75 µJ

Rep. rate 200-800 kHz 200-800 kHz 200-800 kHz

Beam quality M ² < 1.3 M² < 1.3 M² < 1.3

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 13

45 nm

800 nm

1,5 µm

Min. Struktur ~ λ :

ArF – Excimer 193 nm

(F2 – Excimer 157 nm)

Zukunft: EUV: 13.5 nm

Future Topic (2): CO2- Lasers for EUV Generation

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 14

Laser Produced Plasma EUV Source Architecture

Three major subsystems: Laser, BTS and Source Vessel

isolator

isolator

Multi-Stage

CO2 Laser

(in sub-fab)

Beam Transport

and Focusing

System

(through the fab

floor)

. . . . . . . . .

.

EUV Source Vacuum Vessel

(inside the scanner)

Collector

Droplet Generator

IF Protection

Droplet Catcher

BTS

Metrology

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 15

EUV-System

Amplifyer

Amplifyer

Seed-Laser EUV

Amplifier

Amplifier

Sn nozzle

Seed-Laser

Laser Produced Plasma Source

EUV

Collection Optic

Illumination OpticsReflection Type Mask

Projection Optics

Wafer Stage

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 16

CO2 Laser setup: 3 * TLF 15.000 (15.000W)

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 17

CO2 Laser setup: picture, made in production

Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 18

Cymer’s LPP Source for ASML NXE 3100 Scanner

0.5 MW Electricity=> 50kHz Rep Rate500 ns pulses0.4 J Energy+30um tin droplets=>100W EUV Power=> 2 W EUV at workpiece

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