Publication List-Stuart Hutchinson

1. Hutchinson, S., Carr, M., Gwilliam, R., Kelly, M. J. and Sealy, B. J. "The Effect of Proton Isolation on the DC and RF Performance of GaAs Planar Doped Barrier Diodes". Electronics Letters 30. March 1995. Vol. 31 No. 7. pp 583-585

2. Hutchinson, S., Finney, M., Reeson, K. J., Harry, M., Gwilliam, R. and Sealy, B. J., "Comparison of the Growth Mechanisms of Ion Beam Synthesised CoSi2 in Crystalline and Amorphous Silicon" Proc. IIT 1994

3. Harry, M., Finney, M., Hutchinson, S., Curello, G., Reeson K. J. and Sealy, B. J., "Ternary iron-cobalt silicide fabricated by ion beam synthesis" NIM (B) 96 (1995) 356-360.

4. Reeson, K. J., Finney, M. S., Harry,M. A., Hutchinson, S. V., Tan, Y. S., Leong, D., Bearda, T., Yang, Z., Curello, G., Homewood, K., Gwilliam, R. M., and Sealy, B. J., "Electrical, Optical and Materials Properties of Ion Beam Synthesised (IBS) FeSi2 " Invited IBMM '95, Canberra, Australia. NIM (B) 106 (1995) 364-371

5. Billen, K., Kelly, M. J., Hutchinson, S. V., Henini, M., and Hill, G., "Proton Implantation of AlGaAs Resonant Tunnelling Diode Structures" Materials Science and Engineering B35 (1995) 376-381

6. Hutchinson, S., Stephens, J., Carr, M., and Kelly, M. J., "An implant Isolation Scheme for Current Confinement in Graded-Gap Gunn Diodes" Electronics Letters 25th April 1996 Vol. 32 No. 9. pp 851-852

7. Gwilliam, R., Hutchinson, S., and Sealy, B. J., "On the Electrical Properties of Cobalt Implanted into Amorphous Silicon" Invited IIT '96, Houston, Texas

8. Hutchinson, S. "Electrical and Materials Properties of Ion-Beam Synthesized Cobalt Disilicide" MSc Thesis. School of Electronic Engineering, Information Technology and Mathematics. University of Surrey 1993.

10. Hutchinson, S., Kelly, M. J., Gwilliam, R. M., Sealy, B. J., and Carr, M., "Bulk Unipolar diodes formed in GaAs by Ion Implantation" NIM (B) 148 (1999) 478-480

11. Hutchinson, S., Gwilliam, R., Chew, A., Kelly, M. J., and Sealy, B. J., "Acceptor Profile Control in GaAs using Co-Implantation of Zn and P" NIM (B) 148 (1999) 459-462

12. Gwilliam, R. M., Hutchinson, S., Emerson N. G., and Sealy, B. J., "Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation" Electronics Letters, 10 Dec Vol.34 No. 25 2441-244213. A P Knights, S Hutchinson, B J Sealy and P J Simpson “Carrier removal in n-type GaAs by oxygen implantation analysed by positron annihilation spectroscopy” Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 24-25 Nov 1997. EDMO. 1997

14. Blauvelt, H.; Benzoni, A.; Byrd, J; Downie, M., Grosjean, C., Hutchinson, S.; Lee, R.; Monzon, F.; Newkirk, M.; Paslaski, J.; Sercel, P.; Vernooy, D.; Wyss, R.“High performance planar lightwave circuit triplexer with passive optical assembly”Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC 6-11 March 2005

15. Hutchinson, S. “Ion implantation techniques for the fabrication of gallium arsenide multilayer microwave devices” PhD thesis. School of Electronic Engineering, Information Technology and Mathematics. 1997