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Properties of Nanodomain
Polymer Derived SiCODongjoon Ahn
University of Colorado at BoulderDepartment of Mechanical Engineering
Advisor: Prof. Rishi Raj
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MCEN 5208-Introduction to Research
Background & Objective
• Problems facing current in the Microelectronics Circuit – Signal Propagation Delay– Cross-talk– Power Consumption
• The best way to reduce the Limitation– Use low dielectric constant material
• SiCO as a candidate – Low dielectric constant < 2.0– Thermal and Mechanical stability at high temp.
• Find the low dielectric constant material
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MCEN 5208-Introduction to Research
Research Tasks
• Measure the dielectric properties of SiCO thin films– Thickness– Capacitance– Leakage Current
• Apply the SiCO to actual devices– Low Dielectric Constant– Higher Thermal & Mechanical Stability
Future work
Current work for introduction to research
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MCEN 5208-Introduction to Research
Methodology (Fabrication)
Making Precursor
Coating & Patterning
Heat Treatment
Gold Coating
Measurement
Cross-linking
Densification
Pyrolysis
Annealing
•Liquid Precursor
Spin-Coating
UV Lithography &
Polymerization
Process
Detail Step
Check Point
Out put
• ChemicalComposition
•RPM of Spinner•Wave Length
•Interconnection Si/Insulator/metal configuration
•UV Cured & Patterned
Gel Polymer
•ILD Material on Si wafer
Sputtering
•Temperature
•Dielectric Constant
Measuring Dielectric Property
•Thickness•Capacitance•Leakage Current
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MCEN 5208-Introduction to Research
Gold
SiCO
Si Wafer
Methodology (Measurement)
<Si/Insulator/metal configuration>
<Detail Structure>
Apparatus of Measurement
Thickness: Optical Ellipsometry (AutoEL®-II, RUDOLPH RESEARCH)
Capacitance & Leakage Current: Impedance Spectroscopy
(HP 4192A LF IMPEDANCE ANALYZER)
Thickness Measurement
(by Optical Ellipsometer)
