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S. Dhawan, O. Baker, H. Chen, R. Khanna, J. Kierstead, F. Lanni,D. Lynn, A. Mincer,
C. Musso S. Rescia, H. Smith, P. Tipton, M. Weber
Progress on DC-DC converters for SiTracker for SLHC
1
C. Musso S. Rescia, H. Smith, P. Tipton, M. Weber
Yale University, New Haven, CT USABrookhaven National Laboratory, Upton, NY USA
Rutherford Appleton Laboratory, Chilton, Didcot, UKNational Semiconductor Corp, Richardson, TX, USA
New York University, New York, NY, USA
4088 Cables10 Chip Hybrid – SCT Module
for LHC
Counting House
3.5 V
20 Chip Hybrid – Si TrModule for Hi Luminosity
Cable Resistance = 4.5 Ohms
1.5 amps
2.4 amps
X 10 DC-DCPower
Converter
20 Chip Hybrid – Si TrModule for Hi Luminosity
1.3 V
1.3 V
2.4 amps
10.25 V
12.1V
14.08 V13 V
Power Delivery with Existing SCT Cables (total = 4088)
Voltage Drop = 6.75 V
Voltage Drop = 10.8V
0.24 ampsVoltage Drop = 1.08 V
Length of Power Cables = 140 Meters
2
Power Delivery with Existing SCT Cables (total = 4088)Resistance = 4. 5 Ohms
0
10
20
30
40
50
60
70
80
90
100
3.5 V @ 1.5 amps 1.3 V @ 2.4 amps 1.3 V @ 2.4 ampswith x10 Buck
switcher. Efficiency90%
Voltage @ Load
Pow
er E
fficien
cy %
Efficiency
Agenda
§Learning from Commercial Devices§ Buck > Voltage, EMI§ Plug In Cards for ABCN2.5 Hybrids - Noise Tests @Liverpool
§ Require Radiation resistance & High Voltage operation§ Thin Oxide
3
§ Thin Oxide§ High Voltage with Thin Oxide ?§ DMOS, Drain Extension 12V @ 5 nm , 20V @ 7 nm
§ HEMPT has no Oxide – Higher Voltage ? 200 Mrads 20V
Buck Regulator Efficiency after 100 Mrad dosage
55
60
65
70
75
80P
ow
er E
ffic
ien
cy %
AfterExposure
BeforeExposure
Enpirion EN5360§ Found out at Power Technology conference 0.25 µm Lithography
§ Irradiated Stopped on St. Valentines Day 2007
4
40
45
50
0 1 2 3 4 5 6
Output Current Amps
Po
wer
Eff
icie
ncy
%
§ Irradiated Stopped on St. Valentines Day 2007§ No effects after 100 Mrads§ Noise tests at Yale, RAL & BNL.
§ 20 µm Al is good shield for Air Coils§ All other devices failed, even other part numbers from Enpirion
§ We reported @ TWEPP 2008 - IHP was foundry for EN5360§ What makes Radiation Hardness ?§ Chinese Company Devices
Controller
Power Stage Drivers
Pulse Width Controller
Synchronous Buck Converter
Power Stage-High Volts
Control Switch30 mΩ
Synch Switch20 mΩ
Error Amp 80.5
78.4
Eff
icie
ncy
(%
)
5
ControllerLow Voltage V reference
Pulse Width Controller
Buck Safety
Control Switch: Switching Loss > I2Synch Switch: Rds Loss Significant
100 ns
Synch
Control
900 ns
Control
Synch
Minimum Switch ON TimeLimits Max Frequency
500 ns 500 ns
Vout = 10%
Vout = 50%
75.2
Input Voltage (8-14 V)
Eff
icie
ncy
(%
)
Control Switch
EMI Antenna Loops
Current is switched from Q1 to Q2 with minimum Impedance change
Q2
Q1
6
Since the switching noise is generated primarily by the power stage of the supply, careful layout of the power components should take place before the small signal components are placed and routed. The basic strategy is to minimize the area of the loops created by the power components and their associated traces. In the synchronous buck converter shown above the input (source) loop #1 ideally consists of a DC current with a negligible AC ripple. Loop numbers 2 and 3 are the power switch loops. The current in these loops is composed of trapezoidal pulses with large peaks and fast edges (di/dt and dv/dt). The area of these loops will be determined primarily by how close together the power components, the inductor, and the capacitors Cin and Cout can be placed. The closer the components, the shorter the PCB traces connecting them, and therefore the smaller loop area.
Advice form a company application note
Vin = 2.5 – 17 VVout = 2.5 / 1.3 V
Enable GND
GND
RequirementsVoltage Ratio > 8For Good Efficiency Iout >3 ampsAir Coil / MagneticsRadiation Hardness
Small
Output VoltageTolerance +/- 5%
Absolute Max 10%
7
Load0.25 µm Technology Test ASIC 2.5 V @ ~ 3 amps. Actual 5 amps 0.13 µm Technology ASIC 1.3 V @ ?
Enable
Plug in Card – Power Yale Model 2151
GND
Power Good
Small Plug-in Card
Absolute Max 10%For Long Lifetime
Spiral Coils Resistance in mΩ
Top Bottom
3 Oz 57 46
10 mil Cu 19.4 17
Coupled InductorConnected in Series
Shielded Buck Inductor
Shielding Spiral – One end to GND
8
4 layersLayer1: Top Coil with no connection - ShieldLayer2: coil Connect in seriesLayer3: coil Connect in seriesLayer4: Bottom Coil with no connection- Shield
Spacing between Layer 2 & 3 = 14 mills ( 0.35 MM) Proximity EffectTop & Bottom can be more as there is no loss from these
10 mil Cu 19.4 17
Shielding Spiral – One end to GND
Power INEnable / DisablePower Good Out
9Yale University April 09, 2009 Model 2151_Max8654Yale University April 09, 2009
Power Out
Kelvin points for Vin & Vout
MAX8654 with embedded coils (#12), external coils (#17) or Renco Solenoid (#2) Vout=2.5 V
40
50
60
70
80
90
100
Eff
icie
ncy
(%
)
PCB embedded Coil
Copper Coils
Solenoid
10
0
10
20
30
40
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5Output current (amps)
Eff
icie
ncy
(%
)
MAX #12, Vin = 11.9 V MAX #17, Vin = 11.8 V MAX #2, Vin = 12.0 V
Plug In Card: DC-DC Powering 2 Different ICs 3 Different Coils
Monolithic: 14V, 8A, 1.2MHzMultichip: 16V, 8A, 1.5MHz
Coil Board # Common Power Input Noise
Mode Choke To Dc_DC Electrons rms
Solenoid Max # 2 No 881
" " " 885
Copper Coil IR # 17 No Switching 666
" " Yes " 634
11Yale Model 2151a
Embedded 3 oz Cu Etched Cu Foils 0.25 mmSolenoid without Ferrite
" " Yes Linear 664
Embedded Max 12 No Linear 686
" " Yes " 641
All Channels Trimmed
" " Yes " 648
NoiseSame with Linear or DC - DC
12
Sensor 1 cm from Coil
Shield 20 µm Al Foil NoiseNO change with Plug in cardon top
Controller : Low Voltage
Can We HaveHigh Radiation Tolerance & Higher Voltage Together ???
13
High Voltage: Switches –
LDMOS, Drain Extension, Deep Diffusion etc
>> 20 Volts HEMT GaN on Silicon, Silicon Carbide, Sapphire
Thin Gate Oxide
14
Book ‘Ionizing Radiation Effects in MOS Oxides’ Author Timothy R. Oldham
Thin oxide implies lower operating voltage
LDMOS StructureLaterally DiffusedDrain Extension
High Voltage / high FrequencyMain market. Cellular base stations
15
High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 µm SiGe:C BiCMOS technology: IHP MicroelectronicsElectron Devices Meeting, 2001. IEDM Technical Digest. International2-5 Dec. 2001 Page(s):40.4.1 - 40.4.4
16R. Sorge et al , IHP Proceedings of SIRF 2008 ConferenceHigh Voltage Complementary Epi Free LDMOS Module with 70 VPLDMOS for a 0.25 µm SiGe:C BiCMOS Platform
IBM Foundry Oxide Thickness
Lithography Process Operating Oxide
Name Voltage Thickness
nm
17
0.25 µm 6SF 2.5 5
3.3 7
0.13 µm 8RF 1.2 & 1.5 2.2
2.2 & 3.3 5.2
Company Device Process Foundry Oxide Time in Dose before Observation
Name/ Number Name Thickness Seconds Damage seen Damage Mode
Country nm
IHP ASIC custom SG25V GOD IHP, Germany 5 53 Mrad slight damage
XySemi FET 2 amps HVMOS20080720 China 7 52 Mrad minimal damage
XySemi XP2201 HVMOS20080720 China 7 In Development
XySemi XPxxxxHVMOS20080720
China 7In Development Synch Buck
Non IBM Foundry ICs
18
XySemi XP5062 China 12.3 800 44 krad loss of Vout regulation
TI
TPS54620 LBC5 0.35 µm 20 420 23 krad abrupt failure
IR IR3841 9 & 25 230 13 Krads
loss of Vout regulation
Enpirion EN5365 CMOS 0.25 µm Dongbu HiTek, Korea 5 11,500 85 krad
Increasing Input Current,
Enpirion EN5382 CMOS 0.25 µm Dongbu HiTek, Korea 5 2000 111 Krads loss of Vout regulation
Enpirion EN5360 #2 SG25V (IHP) IHP, Germany 5 22 Days 100 Mrads Minimal Damage
Enpirion EN5360 #3 SG25V (IHP) IHP, Germany 5 10 Days 48 Mrads Minimal Damage
For Higher Radiation Resistancev Oxide Thickness is predominant Effect
19
v Others Epi Free processing is Good ?v Oxide Processing is standardv ?????
From China
20
IHP PMOS TransistorVG versus ID at selected Gamma Doses
0
0.2
0.4
0.6
0.8
1
I D (m
A)
Pre-Irradiation
13 Mrad
22 Mrad
35 Mrad
53 Mrad
IHP NMOS TransistorVG versus ID at Selected Gamma Doses
0
0.5
1
1.5
2
2.5
I D (
mA
)
Pre-irradiation
13 Mrad
22 Mrad
35 Mrad
21
XY Semi (VD = 12V)2 Amp FET- HVMOS20080720 Process
00.020.040.060.08
0.10.12
0 0.5 1 1.5
Vg (Volts)
Id (A
mps
)I
0 rad
1 Mrad
5.4 Mrad
33 Mrad
52 Mrad
00 0.5 1 1.5 2 2.5
VG (Volts)
00 0.5 1 1.5 2 2.5
VG (Volts)
22
Depletion ModeNormally ON
Enhancement ModeNormally OFF
GaN for Power Switching
23
RF GaN 20 Volts & 0.1 ampv 8 pieces: Nitronex NPT 25015: GaN on Siliconü Done Gamma, Proton & Neutronsü 65 volts Oct 2009
v 2 pieces: CREE CGH40010F: GaN on siC
v 6 pieces: Eudyna EGNB010MK: GaN on siCü Done Neutrons
Gallium Nitride Devices under Tests
24
ü Done Neutrons
Switch GaNv International Rectifier GaN on Silicon
Under NDA
Gamma: @ BNLProtons: @ LansceNeutrons: @ U of Mass Lowell
Plan to Expose same device toGamma, Protons & Neutrons
Nitronex 25015 Serial # 1
0.1
0.12
25
0
0.02
0.04
0.06
0.08
-2.5 -2.3 -2.1 -1.9 -1.7 -1.5 -1.3 VGS Volts
ID A
mps 4.2 Mrad
0 rad
17.4 Mrad
Source
HEMTPulse
Generator
~ 0.070 AmpsPower SupplyV out = 20
Drain
0 to -5 V
DMMDC mV
330 2 Watts 1 Ω
Pomona Box
Reading = ~ 0.035 Amps@ 50% Duty Cycle
No change in the average current for 200 Mega rads
30 meter Coax
26
Generator0.1 – 2 MHz
50 % Duty Cycle
July 28. 2009 FET Setup for Proton Radiation Exposure @ LANSCE
.
Gate
100
0 to -5 V
Powered FETGND
50 ΩTerminator 2 Shorted
FETs
G
DS
27
IR’s basic current GaN-on-Si based device structure is a high electron mobility transistor (HEMT), based on the presence of a two dimensional electron gas (2DEG) spontaneously formed by the intimacy of a thin layer of AlGaN on a high quality GaN surface as shown in Figure 1. It is obvious that the native nature of this device structure is a HFET with a high electron mobility channel and conducts in the absence of applied voltage (normally on). Several techniques have been developed to provide a built-in modification of the 2DEG under the gated region that permits normally off behavior.
Aside from providing high quality, reliable and a low-cost CMOS compatible device manufacturing process, the GaNpowIR technology platform also delivers dramatic improvements in three basic figures of merit (FOMs), namely specific on-resistance RDS(on), RDS(on)*Qg and efficiency*density/cost.
28Intel won’t disclose any details till product is announced
ConclusionsvLearned from commercial Devices,
Companies & Power conferencesv Can get high Radiation Tolerance & Higher VoltagevHigh Frequency > Smaller Air coil > Less Materialv Goal: ~20 MHz Buck, MEM on Chip size 9 mm x 9mmvPower SOC: MEMs Air Core Inductor on Chip
29
vPower SOC: MEMs Air Core Inductor on Chipv Study Feasibility 48 / 300V Converters vIrradiation: Run @ Max operating V & I.
vLimit Power Dissipation by Switching duty cyclevOnline Monitoring during irradiation for faster resultsvYale Plug Cards can be loaned for EvaluationvCollaborators are Welcome
Working on Power Supply Is not Glamorous
30The End
Neither it on Top of the World