11
Prof. Dario Narducci List of Publications Refereed Journal Articles 1. M. Bollani, J. Osmond, G. Nicotra, C. Spinella, and D. Narducci, Strain– Induced Generation of Silicon Nanopillars, Nanotechnology, 24 (2013) 335302 (UK). 2. Y.-L. Khung, D. Narducci, Synergizing nucleic acid aptamers with 1- dimensional nanostructures as label-free field-effect transistor biosensors, Biosensors and Bioelectronics, 50 (2013) 278 (Netherlands). 3. D. Narducci, G.F. Cerofolini, M. Ferri, F. Suriano, F. Mancarella, L. Belsito, Solmi, and A. Roncaglia, Phonon scattering enhancement in silicon nanolayers, Journal of Materials Science, 48 (2013) 2779 (Germany). 4. N. Neophytou, X. Zianni, M. Ferri, A. Roncaglia, G. F. Cerofolini, and D. Narducci, Nanograin effects on the thermoelectric properties of poly-Si nanowires, Journal of Electronic Materials, 42 (2013) 2393 (USA). 5. N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, and D. Narducci, Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si, Nanotechnology, 24 (2013) 205402 (UK). 6. G.F. Cerofolini, F. Corni, S. Frabboni, G. Ottaviani, E. Romano, R. Tonini, and D. Narducci, Using evidence from nanocavities to assess the vibrational properties of external surfaces, Journal of Physics Condensed Matter, 24 (2012) 104005 (UK). 7. D. Narducci, E. Selezneva, G.F. Cerofolini, S. Frabboni, and G. Ottaviani, Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors, Journal of Solid State Chemistry, 193 (2012) 19 (Netherlands). 8. G.F. Cerofolini, F. Corni, S. Frabboni, G. Ottaviani, E. Romano, R. Tonini, and D. Narducci, Using evidence from nanocavities to assess the vibrational properties of external surfaces, Journal of Physics Condensed Matter, 24 (2012) 104005 (UK). 9. D. Narducci, Electric Power Output Optimization in Seebeck generators: Beyond high ZT, AIP Conference Proceedings, 1449 (2012) 532 (USA). 10. D. Narducci, E. Selezneva, G.F. Cerofolini, S. Frabboni, and G. Ottaviani, High Figures of Merit in Degenerate Semiconductors. Energy Filtering by Grain Boundaries in Heavily Doped Polycrystalline Silicon, AIP Conference Proceedings, 1449 (2012) 311 (USA).

Prof. Dario Narducci List of Publications 24 50 · Prof. Dario Narducci List of Publications Refereed Journal Articles 1. M. Bollani, J. Osmond, G. Nicotra, C. Spinella, and D. Narducci,

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Page 1: Prof. Dario Narducci List of Publications 24 50 · Prof. Dario Narducci List of Publications Refereed Journal Articles 1. M. Bollani, J. Osmond, G. Nicotra, C. Spinella, and D. Narducci,

Prof. Dario Narducci

List of Publications

Refereed Journal Articles

1. M. Bollani, J. Osmond, G. Nicotra, C. Spinella, and D. Narducci, Strain–Induced Generation of Silicon Nanopillars, Nanotechnology, 24 (2013) 335302 (UK).

2. Y.-L. Khung, D. Narducci, Synergizing nucleic acid aptamers with 1-dimensional nanostructures as label-free field-effect transistor biosensors, Biosensors and Bioelectronics, 50 (2013) 278 (Netherlands).

3. D. Narducci, G.F. Cerofolini, M. Ferri, F. Suriano, F. Mancarella, L. Belsito, Solmi, and A. Roncaglia, Phonon scattering enhancement in silicon nanolayers, Journal of Materials Science, 48 (2013) 2779 (Germany).

4. N. Neophytou, X. Zianni, M. Ferri, A. Roncaglia, G. F. Cerofolini, and D. Narducci, Nanograin effects on the thermoelectric properties of poly-Si nanowires, Journal of Electronic Materials, 42 (2013) 2393 (USA).

5. N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, and D. Narducci, Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si, Nanotechnology, 24 (2013) 205402 (UK).

6. G.F. Cerofolini, F. Corni, S. Frabboni, G. Ottaviani, E. Romano, R. Tonini, and D. Narducci, Using evidence from nanocavities to assess the vibrational properties of external surfaces, Journal of Physics Condensed Matter, 24 (2012) 104005 (UK).

7. D. Narducci, E. Selezneva, G.F. Cerofolini, S. Frabboni, and G. Ottaviani, Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors, Journal of Solid State Chemistry, 193 (2012) 19 (Netherlands).

8. G.F. Cerofolini, F. Corni, S. Frabboni, G. Ottaviani, E. Romano, R. Tonini, and D. Narducci, Using evidence from nanocavities to assess the vibrational properties of external surfaces, Journal of Physics Condensed Matter, 24 (2012) 104005 (UK).

9. D. Narducci, Electric Power Output Optimization in Seebeck generators: Beyond high ZT, AIP Conference Proceedings, 1449 (2012) 532 (USA).

10. D. Narducci, E. Selezneva, G.F. Cerofolini, S. Frabboni, and G. Ottaviani, High Figures of Merit in Degenerate Semiconductors. Energy Filtering by Grain Boundaries in Heavily Doped Polycrystalline Silicon, AIP Conference Proceedings, 1449 (2012) 311 (USA).

Page 2: Prof. Dario Narducci List of Publications 24 50 · Prof. Dario Narducci List of Publications Refereed Journal Articles 1. M. Bollani, J. Osmond, G. Nicotra, C. Spinella, and D. Narducci,

11. D. Narducci, Electric Power Output Optimization in Seebeck generators: Beyond high ZT, AIP Conference Proceedings, 1449 (2012) 532 (USA).

12. G.F. Cerofolini, M. Ferri, E. Romano, F. Suriano, G.P. Veronese, S. Solmi, and D. Narducci, Crossbar architecture for tera-scale integration, Semiconductor Science and Technology, 26 (2011) 045005 (UK).

13. D. Narducci, Biosensing at the nanoscale: There's plenty of room inside, Science of Advanced Materials, 3 (2011) 426-435 (USA).

14. M. Ferri, F. Suriano, A. Roncaglia, S. Solmi, G.F. Cerofolini, E. Romano, and D. Narducci, Ultradense silicon nanowire arrays produced via top-down planar technology, Microelectronic Engineering, 88 (2011) 877-881 (Netherlands).

15. G.F. Cerofolini, D. Narducci, E. Romano, L. Baldi, and S. Carrara, A special issue on nanoengineered silicon: Technology and applications, Science of Advanced Materials, 3 (2011) 297-300 (USA).

16. G.F. Cerofolini, L. Baldi, S. Carrara, D. Narducci, and E. Romano, Nanoengineered silicon: Technology and applications, Science of Advanced Materials, 3 (2011) 301-311 (USA).

17. D. Narducci, Do we really need high thermoelectric figures of merit? A critical appraisal to the power conversion efficiency of thermoelectric materials, Applied Physics Letters, 99 (2011) 102104 (USA).

18. D. Narducci, Thermodynamic Efficiency, Power Output and Performance Indices of Classic and Nanostructured Thermoelectric Materials, Journal of Nanoengineering and Nanomanufacturing, 1 (2011) 63-70 (USA).

19. G.F. Cerofolini, E. Romano, and D. Narducci, Chimaera – A New Threefold Functionalized Nanostructured Agent in Cancer Therapy, Journal of Nanoengineering and Nanomanufacturing, Vol. 1, pp. 50-62, 2011

20. G. F. Cerofolini, E. Romano, D. Narducci, P. Belanzoni and G. Giorgi, ‘Assigning chemical configurations to the XPS features observed at pristine (100) Si surface resulting after etching in HF aqueous solution’, Applied Surface Science, 256 (2010) 6330-6339 (Netherlands).

21. E. Romano, G.F. Cerofolini, D. Narducci, F. Corni, S. Frabboni, G. Ottaviani, and R. Tonini, ‘A tool for the spectroscopic investigation of hydrogen-silicon interaction’, Surface & Interface Analysis, 42 (2010) 1307 (USA).

22. E. Romano, G.F. Cerofolini, D. Narducci, C. Galati, and L. Renna, ‘Comparing the IR spectra of H-terminated inner and outer silicon surfaces’, Surface & Interface Analysis, 42 (2010) 1321 (USA).

23. G.F. Cerofolini, E. Romano, D. Narducci, F. Corni, S. Frabboni, G. Ottaviani, and R. Tonini, ‘Adsorption equilibria and kinetics of H2 at

Page 3: Prof. Dario Narducci List of Publications 24 50 · Prof. Dario Narducci List of Publications Refereed Journal Articles 1. M. Bollani, J. Osmond, G. Nicotra, C. Spinella, and D. Narducci,

nearly ideal (21) Si(100) inner surfaces’, Surface Science, 604 (2010) 1215 (Netherlands).

24. G.F. Cerofolini, M. Ferri, E. Romano, F. Suriano, G.P. Veronese, S. Solmi, and D. Narducci, ‘Tera scale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires’, Semiconductor Science & Technology, 25 (2010) 095011 (UK).

25. E. Di Vita and D. Narducci, ‘Sputter-induced damages and impurity effects on oxidized and grafted silicon surfaces’, Thin Solid Films, 517 (2009) 1944-1948 (Netherlands).

26. E. Romano, D. Narducci, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, and G. F. Cerofolini, ‘Nanocavities in silicon: an infrared investigation of internal surface reconstruction after hydrogen implantation’, Materials Science & Engineering B, 159-160 (2009) 173-176 (Netherlands).

27. G. F. Cerofolini, E. Romano, D. Narducci, F. Corni, S. Frabboni, G. Ottaviani, and R. Tonini, ‘Hydrogen injection and retention in nanocavities of single-crystalline silicon’, Journal of Physics D: Applied Physics, 42 (2009) 062001 (UK).

28. E. Romano, G.F. Cerofolini, D. Narducci, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, ‘Evidence for H2 at high pressure in the silicon nanocavities after dipping in HF solutions’, Surface Science, 603 (2009) 2188-2192 (Netherlands).

29. A. Le Donne, M. Acciarri, D. Narducci, S. Marchionna and S. Binetti, ‘Encapsulating Eu3+ Complex Doped Layers to Improve Si-based Solar Cell Efficiency’, Progress In Photovoltaics: Research and Applications, 17 (2009) 519-525 (USA).

30. G.F. Cerofolini, A. Giussani, A. Modelli, D. Mascolo, D. Ruggiero, D. Narducci, and E. Romano, ‘Chemical, energetic, and geometric heterogeneity of device-quality (1 0 0) surfaces of single crystalline silicon after HFaq etching’, Applied Surface Science, 254 (2008) 5781-5790 (Netherlands).

31. G. F. Cerofolini, D. Narducci, P. Amato, and E. Romano, ‘Fractal Nanotechnology’, Nanoscale Research Letters, 3 (2008) 381-385 (USA).

32. E. Romano and D. Narducci, ‘Vibrational Study On Styrene Functionalized Porous Silicon: A Method For Determining The Relative Yield Of Different Grafting Routes’, Surface Science, 601 (2007) 2836-2839 (Netherlands).

33. A. Taffurelli and D. Narducci, ‘Solution Based, RuHCl(CO)(PPh3)3 Catalyzed Hydrosilylation of Alkynes onto Si(100) Surfaces’, Surface Science, 601 (2007) 2840-2844 (Netherlands).

34. M. Oldani, D. Narducci, and A. Taffurelli, ‘Dynamic Barrier Height Modulation Analysis of Metal-Insulator-Semiconductor Junctions Built on Silicon Surfaces Modified by Covalent Organic Layers’, Surface Science, 601 (2007) 2845-2849 (Netherlands).

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35. E. Di Vita and D. Narducci, ‘Metallization of Grafted Silicon Surfaces: Sputtering-Related Damage Effects’, Surface Science, 601 (2007) 2855-2858 (Netherlands).

36. G.F. Cerofolini, A. Giussani, F. Carone Fabiani, A. Modelli, D. Mascolo, D. Ruggiero, D. Narducci, and E. Romano, ‘Combined IR and XPS analysis of the native (100) surface of single crystalline silicon after HFaq etching’, Surface & Interface Analysis, 39 (2007) 836-844 (USA).

37. D. Narducci, ‘An Introduction to Nanotechnologies: What’s in It for Us?’, Veterinary Research Communications, 31 (2007) 131-137 (Netherlands).

38. D. Narducci, P. Bernardinello, and M. Oldani, ‘Investigation Of Gas-Surface Interactions At Self-Assembled Silicon Surfaces Acting As Gas Sensors’, Applied Surface Science, 212-213 (2003) 491-496 (Netherlands).

39. L. Pedemonte, G. Bracco, A. Relini, R. Rolandi, and D. Narducci, ‘Morphology Changes of Si(001) Surfaces During Wet Chemical Halogenation’, Applied Surface Science, 212-213 (2003) 595-600 (Netherlands).

40. D. Narducci, G. Bracco, and L. Pedemonte, ‘On The Re-Oxidation Of Silicon (001) Surfaces Modified By Self-Assembled Monolayers’, Applied Surface Science, 212-213 (2003) 649-653 (Netherlands).

41. D. Narducci, ‘Interaction of Small Molecules With Silicon Surfaces’, Solid State Phenomena, 85-86 (2002) 337-352 (Switzerland).

42. M. Bollani, R. Piagge, and D. Narducci, ‘Modulation of Si (100) Electronic Surface Density Due To Supramolecular Interactions of Gaseous Molecules with Self-Assembled Organic Monolayers’, Materials Science & Engineering C, 15 (2001) 253-255 (Netherlands).

43. M. Bollani, R. Piagge, A. Charaï, and D. Narducci, ‘Experimental Evidence and Computational Analysis of the Electronic Density Modulation Induced by Gaseous Molecules at Si (001) Surfaces Upon Self-Assembling Organic Monolayer‘, Applied Surface Science, 175-176 (2001), 379-385 (Netherlands).

44. M. Bollani, L. Fares, A. Charaï, and D. Narducci, 'Chemically-Induced Disordering Of Si (100) Surfaces Upon SC1/SC2 Etching Analysed By High-Resolution Transmission Electron Microscopy', Materals Science & Engineerings, B73 (2000) 154-157 (Netherlands).

45. M. Bollani, M. Portail, J.-M. Layet, A. Charaï, and D. Narducci, 'Final Evidence For H Termination of HF-Treated Si Surfaces: A Comparative Study By High-Energy and Vibrational Spectroscopies', Materials Science & Engineering, B73 (2000) 240-243 (Netherlands).

46. S. Spadoni, M. Acciarri, D. Narducci, and S. Pizzini, 'Surface Micro-Characterisation of Silicon Wafers By The LBIC Technique In Planar Configuration And By Attenuated Total Reflection Spectroscopy', Philosophical Magazine B, 80 (2000) 579-585 (UK).

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47. F. Cargnoni, C. Gatti, E. May and D. Narducci, 'Geometrical Reconstruction and electronic relaxations of silicon surfaces. I. An

electron density topological study of H-covered and clean Si (111) (11) surfaces', Journal of Chemical Physics, 112 (2000) 887-899 (USA).

48. R. Piagge, M.C. Andreola, M. Bollani e D. Narducci, ‘Highly Activated Tin Dioxide Thin Films: An Analysis of Gas-Surface Interaction’, Il Vuoto (Vacuum), 29 (2000) 14-17 (Italy).

49. R. Piagge, B. Marangon, P. Milani e D. Narducci, ‘Analysis and Modeling of CVD-Grown Nanotube Films’, Il Vuoto (Vacuum), 29 (2000) 40-43 (Italy).

50. D. Narducci, L. Toselli, and P. Milani, ‘Modeling of Aerosol-Assisted Chemical Vapor Co-Deposition of NiO and Carbon Nanotubes’, Journal de Physique (France), 9 (1999) Pr8-741-747 (France).

S. Pizzini, M. Acciarri, S. Binetti, D. Narducci, and C. Savigni, ‘Recent Achievements in Semiconductor Defect Passivation’, Materials Science & Engineering, B 45 (1997) 126-133 (Netherlands)

52. D. Narducci, G. Girardi, C.M. Mari, and S. Pizzini, ‘Application of Surface Science to Preparation and Characterization of Solid State Chemical Sensors’, Sensors & Materials, 8 (1996) 223-229 (Japan).

53. C. Alfonso, A. Charaï, A. Armigliato, and D. Narducci, ‘Transmission Electron Microscopy Investigation of Tin Sub-Oxide Nucleation Upon SnO2 Deposition on Silicon, Applied Physics Letters, 68 (1996) 1207-1208 (USA).

54. D. Narducci, ‘Stereochemical Random Networks. A Contribution to a Structurally-Aware Hopping Theory in Oxide Glasses’, Journal of Non-Crystalline Solids, 181 (1995) 251-260 (Netherlands).

55. D. Narducci, G. Girardi, C.M. Mari, and S. Pizzini, ‘Interfacial Issues in the Design and the Making of Solid State Chemical Sensors’, Sensors & Actuators B, 24 (1995) 266-269 (Switzerland).

56. D. Narducci, L. Facheris, and C.M. Mari, ‘CO2 Monitoring by Solid-State Limiting Current Sensors’, Sensors & Actuators B, 25 (1995) 636-638 (Switzerland).

57. D. Narducci, G. Girardi, C. Romanelli e S. Pizzini, ‘Analysis of the High-Temperature Degradation of Gas Sensors Based on Oxide Semiconductors’, Vuoto - Scienza e Tecnologia, 24 (1995) 20-23 (Italy).

58. S. Bruni, F. Cariati, and D. Narducci, ‘Infrared Specular Reflection Spectra of Copper-Zinc Phosphate Glasses’, Vibrational Spectroscopy, 7 (1994) 169-173 (Netherlands).

59. D. Narducci, A. Ornaghi, and C.M. Mari, ‘CO Determination in Air by YSZ-based Sensors’, Sensors & Actuators B, 18-19 (1994) 566-568 (Switzerland).

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60. D. Narducci, R. Morandi, F. Morazzoni, S. Bruni, F. Cariati, and U. Russo, ‘Electronic Conductivity in Copper- and Iron-Based Phosphate Glasses Exhibiting Clustering and Spinodal Decomposition’, Journal of Materials Chemistry, 3 (1993) 1179-1185 (Netherlands).

61. P. Di Nola, F. Morazzoni, R. Scotti, and D. Narducci, ‘Paramagnetic Point Defects in SnO2 and Their Reactivity with the Surrounding Gases’, Journal of Chemical Society, Faraday Transaction, 89 (1993) 3711-3713 (UK).

62. C.M. Mari, D. Narducci, and L. Facheris, ‘Solid-State Limiting Current Sensor for CO2 Determination’, International Solid State Ionics Letters, 3 (1992) 1-2 (Switzerland).

63. C.M. Mari, G.B. Barbi, A. Lauricella, and D. Narducci, ‘Contribution to the interpretation of the thermodynamic and kinetic behaviour of chlorine gas solid state potentiometric sensors’, Sensors & Actuators B, 7 (1992) 637-641 (Switzerland).

64. F. Morazzoni, R. Scotti, P. Di Nola, C. Milani, and D. Narducci, ‘Electron Paramagnetic Resonance Study of the Interaction of the ZnO Surface with Air and Air-Reducing Gas Mixtures’, Journal of Chemical Society, Faraday Transactions, 88 (1992) 1691-1694 (UK).

65. D. Narducci, C.R. Guarnieri, and J.J. Cuomo, ‘Defect Clustering and Boron Electrical Deactivation in p-doped Polycrystalline Diamond Films’, Journal of The Electrochemical Society, 138 (1991) 2446-2451 (USA).

66. A. Musinu, G. Piccaluga, G. Vlaic, D. Narducci, and S. Pizzini, ‘Coordination of Zinc and Copper in Phosphate Glasses by EXAFS’, Journal of Non-Crystalline Solids, 136 (1991) 198-204 (Netherlands).

67. D. Narducci and J.J. Cuomo, ‘Boron Diffusivity in Non-Implanted Diamond Single Crystals Measured by Impedance Spectroscopy’, Journal of Applied Physics, 68 (1990) 1184-1186 (USA).

68. A. Borghesi, M. Geddo, G. Guizzetti, S. Pizzini, D. Narducci, A. Sandrinelli, and G. Zachmann, ‘Infrared Microcharacterization of Grain Boundaries in Polycrystalline Silicon’, Solid State Communications, 69 (1989) 457-460 (USA).

69. S. Pizzini, N. Buttà, D. Narducci, and M. Palladino, ‘Thick Film ZnO Resistive Gas Sensors: Analysis of Their Stationary and Kinetic Behaviour’, Journal of The Electrochemical Society, 136 (1989) 1945-1948 (USA).

70. A. Musinu, G. Piccaluga, G. Pinna, D. Narducci, and S. Pizzini ‘Short range order of Zn and Cu in metaphosphate glasses by X-ray diffraction’, Journal of Non-Crystalline Solids, 111 (1989) 221-227 (Netherlands).

71. D. Narducci, M. Lucca, F. Morazzoni, and R. Scotti, ‘Electron Spin Resonance Investigation of the Electronic Structure of Hopping Center

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and the Polaronic Conduction in Iron-Containing Phosphate Glasses’, Journal of The Chemical Society, Faraday Transactions I, 85 (1989) 4099-4110 (UK).

72. S. Pizzini, A. Sandrinelli, M. Beghi, D. Narducci, F. Allegretti, S. Torchio, G. Fabbri, G.P. Ottaviani, F. Demartin, and A. Fusi, ‘Influence of Extended Defects and Native Impurities on the Electrical Properties of Directionally Solidified Polycrystalline Silicon’, Journal of the Electrochemical Society, 135 (1988) 155-165 (USA).

73. S. Pizzini, D. Narducci, and M. Rodot, ‘Electrical Activity of Extended Defects in Polycrystalline Silicon’, Revue de Physique Appliquée, 23 (1988) 101-104 (France).

74. D. Narducci, P. Casati, G.B. Preve, and S. Pizzini, ‘Temperature-Dependent Activation Energy for Polaronic Conduction in Copper-Doped Zinc Phosphate Glasses’, Physica Scripta, 38 (1988) 92-99 (Sweden).

75. S. Pizzini, D. Narducci, D. Daverio, C.M. Mari, F. Morazzoni, and A. Gervasini, ‘Optical and Spectromagnetical Properties of Phosphate Glasses Containing Ruthenium and Titanium Ions’, Journal of The Chemical Society, Faraday Transactions I, 83 (1987) 705-719 (UK).

76. S. Pizzini, A. Sandrinelli, M. Beghi, D. Narducci, and P.L. Fabbri, ‘Recombination Effects Due to Impurity Segregation at Grain Boundaries in Polycrystalline Silicon’, Revue de Physique Appliquée, 22 (1987) 631-636 (France).

77. D. Narducci, C.M. Mari, S. Pizzini, and F. Morazzoni, ‘Spectromagnetic Evidence for Spatial Correlation of Copper Centers in Phosphate Glasses and its Effect on the Charge Transport Processes’, Journal of The Chemical Society, Faraday Transactions I, 83 (1987) 3587-3602 (UK).

78. C.M. Mari e D. Narducci, ‘Conduttori Protonici Solidi Inorganici. I - Struttura delle Fasi e Natura dei Processi di Trasporto di Carica’, La Chimica e L'Industria, 68 (10) (1986) 70-74.

79. C.M. Mari e D. Narducci, ‘Conduttori Protonici Solidi Inorganici. II - Applicazioni Elettrochimiche’, La Chimica e L'Industria, 68 (12) (1986) 67-70.

80. D. Narducci, F. Negroni, and C.M. Mari, ‘High Temperature Standard Gibbs Free Energy Determinations for Co-O Systems by EMF Measurements. A Statistical Approach to Evaluate the Reliability of the Current Methods’, Material Chemistry and Physics, 12 (1985) 377-388 (Switzerland).

81. S. Pizzini e D. Narducci, ‘Proprietà Elettriche e Optoelettroniche dei Semiconduttori. I - Struttura Elettronica e Fenomeni di Disordine nei Semi-conduttori Elementari’, La Chimica e L'Industria, 67 (1985) 553-570.

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Patents

82. D. Narducci e G.F. Cerofolini, ‘Seebeck/Peltier thermoelectric conversion device employing a stack of alternated nanometric layers of conductive and dielectric material and fabrication process’, US2012279542 (A1) 2012-11-08 (priority date 2011-05-04)

83. D. Narducci e G.F. Cerofolini, ‘Seebeck/Peltier thermoelectric conversion device employing treated films of semiconducting material not requiring nanometric definition’, US2012174954 (A1) 2012-07-12 (priority date 2009-07-15)

84. G.F. Cerofolini, D. Narducci e E. Romano, ‘Nanotori of semiconductor material for use in diagnostics and in the anti-tumor therapy and process for the production thereof’, PCT/IT2011/000110, WO2012140680 (Apr. 12 2011).

85. D. Narducci, ‘Method for protecting silver and silver alloy surfaces against tarnishing’, WO2011IB00369 2011-09-01 (priority date 2010-02-24)

86. D. Narducci, G.F. Cerofolini, ‘Seebeck/Peltier Thermoelectric Conversion Device Employing Treated Films of Semiconducting Material Not Requiring Nanometric Definition’, PCT/IB2010/001729 (July 14, 2010).

87. D. Narducci, G. F. Cerofolini, ‘Seebeck/Peltier thermoelectric conversion element with parallel nanowires of conductor or semiconductor material organized in rows and columns through an insulating body and process’, ITVA2009A000082 EP2513988 (Dec. 15, 2009).

88. D. Narducci, ‘Seebeck/Peltier bidirectional thermo-electric conversion device using nanowires of conductor or semiconductor material’, WO2009125317(A2)-ITRM20080193(A1) (Apr. 11, 2008)

89. M. Oldani, A. Bernardi and D. Narducci, ‘Gas sensor comprising a gas sensitive cyclodextrin layer covalently bonded to a semiconducting substrate and method for its preparation’, WO2009000661(A1) – VE2007A000041 (June 27, 2007).

90. D. Narducci, ‘Electric Device For Determining Aeriform Substances’, WO089719(A1) – EP1856515(A1) – US2006191791(A1) – JP2006191791(A1) – CA2537561(A1) (Aug. 31, 2006).

91. D. Narducci, ‘Metodo di ignifugazione di materiale ligneo’, ITVE2006A000083(A1) (Dec. 27, 2006).

Book Chapters

92. E. Romano, G.F. Cerofolini, and D. Narducci, ‘Silicon functionalization for nano-electronic devices: A critical appraisal of the underlying mechanisms’, Encyclopedia of Semiconductor Nanotechnology, in press.

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93. D. Narducci and G.F. Cerofolini, ‘Biased Diffusion and Rectified Brownian Motion at the Nanoscale Driving Mobile Sensing Automata for the Early Diagnosis of Endogenous Diseases’, in N. Rozlosnik (ed.), Nanomedicine in Diagnostics, 2012, Science Publishers, pp. 1−25.

94. E. Romano, S. Trabattoni, M. Campione, E. Merati, A. Sassella, and D. Narducci, ‘Combined use of AFM and FTIR in the analysis of the hydrogen termination of Si(100) surfaces’, in A. Mendez Vilas, J. Diaz Alvarez eds. Microscopy: Science, Technology, Applications and Education, vol. 3, Formatex Research Center, 2010, pp. 1984-1992.

95. G.F. Cerofolini, D. Narducci, and E. Romano, ‘The litho-to-nano link’, in C. I. Contescu ed., Dekker Encyclopedia of Nanoscience and Nanotechnology, 2nd Edition, Taylor & Francis, London, 2009, 1:1, 1890-1900.

96. G.F. Cerofolini, D. Narducci, and E. Romano, ‘Silicon Functionalization for Molecular Electronics’, in C. I. Contescu ed., Dekker Encyclopedia of Nanoscience and Nanotechnology, 2nd Edition, Taylor & Francis, London, 2009, 1:1, 4009-4020.

Conference Proceedings

97. D. Narducci, E. Selezneva, A. Arcari, G.F. Cerofolini, E. Romano, R. Tonini, and G. Ottaviani, Enhanced thermoelectric properties of strongly degenerate polycrystalline silicon upon second phase segregation, MRS Proceedings, 1314, mrsf10-1314-ll05-16 doi:10.1557/opl.2011.511

98. E. Selezneva, A. Arcari, G. Pernot, E. Romano, G. Cerofolini, R. Tonini, S. Frabboni, G. Ottaviani, A. Shakouri, and D. Narducci, Effect of nanocavities on the thermoelectric properties of polycrystalline silicon, MRS Proceedings, 1329, mrss11-1329-i01-09 doi:10.1557/opl.2011.1465.

99. F. Suriano, M. Ferri, S. Solmi, L. Belsito, A. Roncaglia, E. Romano, D. Narducci and G. Cerofolini (2012). Thermoelectric Properties of p and n-type Nanocrystalline Silicon Nanowires with High Doping Levels, MRS Proceedings, 1408, mrsf11-1408-bb11-04 doi:10.1557/opl.2012.37.

100. D. Narducci, E. Selezneva, G.F. Cerofolini, E. Romano, R. Tonini, and G. Ottaviani, ‘Opportunities and challenges in the use of heavily doped polycrystalline silicon as a thermoelectric material. An experimental study’, in 8th European Conference on Thermoelectrics, Como, pp. 141-146, 2010

101. G.F Cerofolini., M Ferri., E. Romano, A. Roncaglia, E. Selezneva, A. Arcari, F. Suriano, G.P. Veronese, S. Solmi, and D. Narducci, "Industrially scalable process for silicon nanowires for Seebeck generation", in 8th European Conference on Thermoelectrics, Como, pp. 147-151, 2010.

102. D. Narducci, L. Toselli, and P. Milani, ‘Preliminary Results Of Low-Temperature Deposition Of Nanotubes Using Aerosol-Assisted

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Chemical Vapor Deposition’, Proc. Symp. On Fundamental Gas-Phase Chemistry of Vapor-Phase Materials Synthesis, 194th Electrochemical Society Meeting, vol. 98-23, Pennington, 1999, pp. 452-457 (USA).

103. D. Narducci, ‘Computer Simulation of Dielectric Relaxation at Metal-Insulator Interfaces’, in K.L. Mittal (ed.), Metallized Plastics: Fundamentals and Applications, M. Dekker, 1998, pp. 213-225 (USA).

104. D. Narducci, ‘Non-Destructive Techniques for Monitoring Metallized Plastics Adhesion’, in K.L. Mittal (ed.), Metallized Plastics 5 & 6: Fundamental and Applied Aspects, VSP Publisher, The Netherlands, 1998, pp. 423-438 (Netherlands).

105. D. Narducci and F. Canali, 'Novel Aerosol Assisted-CVD Technology for Oxide Film Deposition', in Proceedings of the 14th International Conference on CVD and EuroCVD-11, (M.D. Allendorf and C. Bernard eds.), The Electrochemical Society, vol. 97-25, Pennington, 1997, pp. 1145-1149

106. D. Narducci and C. Romanelli, ‘Modeling of Specular Reflection Infrared Spectra of Oxide Films for Microstructural Analysis’, in Polycrystalline Semiconductors IV, (S. Pizzini, H.P. Strunk, J.H. Werner eds.), Solid State Phenomena, 51-52 (1996) 289-294 (Switzerland).

107. D. Narducci, G. Girardi, and C. Piseri, ‘Preparation, Micromorphology and Stability of Tin Dioxide Thin Films’, in Polycrystalline Semiconductors IV, (S. Pizzini, H.P. Strunk, J.H. Werner eds.), Solid State Phenomena, 51-52 (1996) 435-440 (Switzerland).

108. D. Narducci and C. Romanelli, `Computer Simulation of Aerosol-Assisted Chemical Vapor Deposition Processes', Proceedings of the XIII Symposium on Chemical Vapor Deposition, (T.M. Besmann, M.D. Allendorf, McD. Robinson, R.K. Ulrich, eds.), The Electrochemical Society, vol. 96-5, Pennington, 1996, p. 137-141 (USA).

109. D. Narducci and C. Romanelli, `Morphology Control and Microstructural Evolution of Tin Dioxide Thin Film Sensors', in C. Di Natale and A. D’Amico (eds.), Proceedings of the 1st National Conference on Sensors and

110. D. Narducci, S. Pizzini, E. D'Acci, and L. Cinquegrani, ‘A Study of the Surface Sensitivity of Tin Oxide Sensors to Carbon Monoxide and Dioxide’, Chemical Sensors II, Vol. 93-7, The Electrochemical Society, p. 482-489 (USA).

111. D. Narducci, S. Pizzini, and F. Morazzoni, ‘Stability and Defect Injection in Zinc Oxide Thick Films’, Chemical Sensors II, Vol. 93-7, The Electrochemical Society, p. 325-333 (USA).

112. D. Narducci, J.J. Cuomo, D.L. Pappas, and K. Sachdev, ‘Non-Destructive Evaluation of Adhesion at Metal-Insulator Interfaces Based on Extremely-Low-Frequency Dielectric Spectroscopy’, in K.L. Mittal (ed.),

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Metallized Plastics 3: Fundamental and Applied Aspects, Plenum Publisher, New York, 1992, p. 365-383 (USA).

113. S. Pizzini, F. Borsani, A. Sandrinelli, and D. Narducci, ‘Effect of impurity segregation on the electrical properties of grain boundaries of polycrystalline silicon’, Point, Extended and Surface Defects in Semiconductors (G. Benedek, A. Cavallini, W. Schroeter eds.), Plenum Press (1989) Series B, vol. 202, p.105-121 (USA).

114. D. Narducci, J.J. Cuomo, C.R. Guarnieri, and S.J. Whitehair, ‘Electrical Characterization of Metal Contacts on Diamond Thin Films’, Proceedings of the 1989 Materials Research Society Fall Meeting, Boston (1989), pp. 333-339 (USA).

115. D. Narducci and J.J. Cuomo, ‘Electrical Behavior of Diffused Impurities in Diamond Single Crystals', Proceedings of the 1989 Materials Research Society Fall Meeting, Boston (1989), p. 365-369 (USA).

116. S. Pizzini, F. Borsani, D. Narducci, A. Sandrinelli, M. Anderle, and R. Canteri, ‘On the Influence of The Cottrell Atmosphere on the Recombination Losses at Grain Boundaries in Polycrystalline Silicon’, Proceedings of the International Symposium on Polycrystalline Semiconductors (J.H. Werner, H.J. Moeller, H.P. Strunk eds.) Springer-Verlag (1989) p.115-121 (West Germany).

117. S. Pizzini, P. Cagnoni, D. Narducci, and A. Sandrinelli, ‘Interaction of Native and Deep Level Impurities with Extended Defects in Silicon’, Gettering and Defect Engineering in Semiconductor Technology, Academy of Sciences GDR, Garzau (1987), 268-272 (East Germany).