Product information - Startseite - Allresist DE€¦ · We deliver our products within 2 week ex work or on the requested date. Package sizes for resists: ¼ l, 0.5 l (2 x ¼ l),

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InnovationCreativity

Customer-specific solutions

Product information

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InnovationCreativityCustomer-specific solutions



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OUR NEWSTHE ALLRESIST GMBHCompany for chemical products for microstructuring

As of: January 2017

The Allresist GmbH offers a wide range of resists and process chemicals for all standard applications of photo and e-beam lithography which are required for the fabrication of electronic components.

As independent resist manufacturer, we develop, produce and distribute our products worldwide. On the market since 1992, Allresist benefits from a comprehensive know-how gained in 30 years of resist research, and fabricates products with highest quality (ISO 9001).As chemical company, we are particularly aware of our obligation to a healthy environment. A respon-sible and protective resource management and vo-luntary replacement of environmentally hazardous products is living politics for us. Allresist is environ-mentally certified (ISO 14001) and environmental partner of the Federal State of Brandenburg.

The company is represented worldwide with an ex-tensive product range. In addition to our standard products, we also manufacture customer-specific products on request.

Allresist furthermore develops innovative products for future-oriented technologies like e.g. microsys-tems technologies and electron beam lithography. In these constantly growing markets, top-perfor-mance resists with high sensitivity and a high reso-lution are in strong demand.

Our newly developed e-beam resists CSAR 62 and AR-N 7520 meet these demands, pushing forward innovative technologies with their excellent pro-perties. With Electra 92 as top layer, e-beam resists can be processed also on insulating substrates like glass, quartz, or GaAs. Our flexible approach to customer’s demands, to-

gether with effective production technologies, allows us to provide fast availability which results in very short delivery times, small packaging sizes from ¼ l onwards, 30 ml test samples as well as an individually tailored advisory service.

Allresist received a number of awards for scientific and economic top performance (technology transfer prize, innovation award, customer’s champion, quality award and Ludwig-Erhard-prize).

Interesting news and further information for you are compiled on our web page where you will find answers to many questions in our resist-WIKI and the FAQ.

the executive board

Our team

WWW.ALLRESIST.COM

32 nm technology with Sx ar-n 7520/4 = ar-n 7520.07

10 nm structures with ar-p 6200 = CSar 62 (100 nm pitch)

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with addition of halogenated acid generators ensures a high sensitivity and excellent resoluti-on, a steep contrast as well as excellent plasma etching stability.

With different developers, a resolution of up to 10 nm and sensitivities of about 10 µC/cm2 can be realised. If used in a two-layer system with PMMA, the fabrication of smallest.

2012With the new e-beam resist ar-n 7520/4 (re-placing resist AR-N 7520 new), Allresist intro-duces a high-resolution and at the same time sensitive new resist onto the market. In contrast to currently available e-beam resists, this resist is characterised by a 7-fold higher sensitivity. The dose to clear a 100-nm layer reduces the writing times at 30 KV to 35 µC/cm2.

18 new anisole-pmma resists ar-p 632…672 of types 50K, 200K, 600K and 950K complement the current anisole PMMA resist palette which also, just like the chlorobenzene PMMAs, meet the high demands of e-beam lithography.

2011

Allresist offers the new ready-to-use spray re-sist series ar-p 1200 and ar-n 2200 which are suitable for an even coverage of vertical trenches, for etched 54° slopes as well as for the deposition of resists by spin coating.

2010

Other new products are polyimide resists which are temperature-stable up to 400 °C: protecti-ve coating Sx ar-pC 5000/80 and the positive resist ar-p 5000/82.

Currently still in development

Within the scope of the Eurostar project „PPA-Litho“, thermally developable 10 nm resists for NanoFrazor procedures and e-beam lithogra-phy are developed. It should also be possible to structure silylated PPAs (polyphtalaldehydes) with the aforementioned methods which then, in the case of success, provides an alternative to HSQ.

2017After further optimisation, the ready-to-use spray resists AR-P 1200, AR-N 2200 are in successful use.The old AR-N 7520 providing a particularly high structural accuracy for very precise edges is offered again after nu-merous customer requests.

2016 AR-PC 5090 and 5091 were specifically developed for the efficient dissipation of electrical charges during e-beam litho-graphy on insulating substrates. The new, highly conductive protective coatings can be applied on PMMA, CSAR 62, and HSQ as well as on novolac-based e-beam resists and are removed easily and completely after the process. Electra 92 can furthermore be used as a replacement for metal vapour deposition in SEM images.

2015The negative e-beam resists Sx ar-n 7530 (nor CAR, like 7520) and Sx ar-n 7730 (CAR, like 7700) were de-veloped for users of e-beam technologies which have no (or not yet) access to yellow light conditions.

2014 Due to the classification of the raw material NEP which is contained in removers AR 300-70 and 300-72 as toxic for reproduction, Allresist now introduced the less harmful new remover ar 300-76 with respect to dissolving power.

Additional eight PMMA solids complement the PMMA product portfolio which now comprises 43 solids contents.

2013The new 5 µm-resist ar 4400-05 completes the CAR series 44 and represents an efficient alternative to SU-8. The possi-ble film thickness values now range from 2.5 µm to 100 µm.

Structures with extreme undercuts is possible: 22 nm structures with two-layer system AR-P 6200 / AR-P 679.03

The new remover ar 600-71 is already at room tempe-rature particularly efficient for the removal of e-beam- and photoresist films baked at higher temperatures.The new electron beam resist CSar 62 is a further de-velopment of the well-known ZEP resists. This copolymer on the basis of methyl styrene-co-α-chloromethacrylate

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We deliver our products within 2 week ex work or on the requested date. Package sizes for resists: ¼ l, 0.5 l (2 x ¼ l), 1 l, 2.5 l, 6 x 1 l, 4 x 2.5 l; process chemicals: 1 l, 2.5 l, 5 l, 4 x 2.5 l, 4 x 5 l.

Content & Product Overview Experimental Samples

Applications / Properties Product Page

Plasma etching and temperature-stable thick positive photoresist SX AR-P 3220/7 06

Positive photoresist for holography, also for long-wave exposure SX AR-P 3500/6 08

Thermostable positive photoresist up to 300 °C based on polyhydroxystyrene SX AR-P 3500/8 10

High-contrast positive photoresist for sub-µm, also for dip coating SX AR-P 3740/4 12

Thermo-stable negative resist up to 300 °C, for 1- and Two-layer processes SX AR-N 4340/7 14

Protective coating, KOH- and HF-resistant for wafer backside protection SX AR-PC 5000/40 16

Polyimide resist, for 2-layer structuring or as protective coating SX AR-PC 5000/80.2 20

Polyimide resist, plasma-etching resistant, temperature-stable up to 450 °C SX AR-P 5000/82.7 24

Alkali-stable positive photoresist up to pH 13, also usable as protective coating X AR-P 5900/4 26

White light negative e-beam resist for mix&match, otherwise like AR-N 7520 SX AR-N 7530/1 28

Highly sensitive negative e-beam resist (CAR) X AR-N 7700/30 30

White light negative e-beam resist with high gradation, analogous to AR-N 7700 SX AR-N 7730/1 32

Product Portfolio Experimental Samples 34

These resist formulations are currently successfully processed by our customers, may however also be modified according to new customer’s requirements.

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Coating with SX AR-P 3220/7

4000 rpm, 60 s, 6.0 µm

Tempering (± 1 °C) 95 °C, 2 min, hot plate or 90 °C, 30 min, convection oven

UV exposure Broadband UV, 365 nm, 405 nm, 436 nmExposure dose (E0, BB-UV stepper):

160 mJ/cm²

Development(21-23 °C ± 0.5 °C) puddle

AR 300-26, 1 : 21 min

Rinse DI-H2O, 30 s

Post-bake(optional)

110 °C, 1 min hot plate or

110 °C, 25 min convection oven

Customer-specific technologies

Generation of e.g. semi-conductor properties, plasma etching or electroplating

Removal AR 300-76 or O2 plasma ashing

Supplementary information

Process conditionsThis diagram shows exemplary process steps for resist SX AR-P 3220/7. All specifications are guideline values which have to be adapted to own specific conditions. For further information on processing “Detailed instructions for optimum processing of photoresists”. For recommendations on waste water treatment and general safety instruc-tions ”General product information on Allresist photoresists”.

This resist was originally developed for customer-specific plasma etching technologies and very well meets all demands of this technology. The resist can however also be used for all other thick resist applications in microelectronics or microsystems technology.

This resist formulation is currently successfully processed by our customers, may however also be modified according to new customer’s requirements.

Plasma-etching stable Positive Photoresist SX AR-P 3220/7

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Process chemicals

Properties I

Spin curve Properties II

Characterisation

Process parameters

Structure resolution Resist structures

Parameter / SX AR-P 3220/7

Solids content (%) 43Viscosity 25 °C (mPas) 385Film thickness/4000 rpm (µm) 6Resolution (µm) 1.5Contrast 4.0Flash point (°C) 42Storage 6 month (°C) 10 - 18

thick temperature-stable positive photoresist Experimental sample/custom-made product

- broadband, i-line, g-line

- high photosensitivity, good resolution

- very plasma etching stable, thermally stable up to 130 °C

- 12 µm with single spin coating step (1000 rpm)

possible

- combination of novolac and naphthoquinone diazide

- safer solvent PGMEA

Glass transition temperature (°C) 108Dielectric constant 3.1Cauchy coefficients N0 1.605

N1 79.5N2 105.1

Plasma etching rates (nm/min)

(5 Pa. 240-250 V Bias)

Ar-sputtering 5O2 158CF4 29

80 CF4+ 16 O2

80

Substrate Si 4“ waferTempering 95 °C, 180 s, hot plateExposure g-line stepper (NA: 0.56)Development AR 300-26. 1 : 2, 120 s, 22 °C

SX AR-P 3220/73 µm bars at a film thickness of 10 µm

Adhesion promoter AR 300-80

Developer AR 300-26Thinner AR 300-12Remover AR 300-76, 600-70

Plasma-etching stable Positive Photoresist SX AR-P 3220/7

Resist structures at a film thick-ness of 10 µm

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Properties I


Characterisation

Process parameters


Parameter / SX AR-P 3500/6Solids content (%) 36Viscosity 25 °C (mPas) 29Film thickness/4000 rpm (µm) 2.0Resolution (µm) 0.8Contrast 3.0Flash point (°C) 42Storage 6 month (°C) 10 - 18

positive photoresist, also for long-wave exposure Experimental sample/custom-made product

- broadband, i-line, g-line

- sensitive up to a wavelength of 500 nm

- suitable for the production of holographic structures

- processing in BB-UV possible, like AR-P 3510

- plasma etching stable, thermally stable up to 120 °C




N1 77.0N2 160.5


(5 Pa. 240-250 V Bias)


80 CF4 + 16 O2

87

Substrate Si 4“ waferTempering 95 °C, 2 min, hot plateExposure Laser 488 nmDevelopment AR 300-26. 2 : 1, 1 min. 22 °C

7 µm Gräben mit dem

SX AR-P 3500/8

Adhesion promoter AR 300-80Developer AR 300-26Thinner AR 300-12Remover AR 300-76, AR 600-70

Positive Photoresist for Holography SX AR-P 3500/6

10 µm Steg des SX AR-P 3500/8 nach einem Hard-Bake von 280 °C

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Development recommendations


Coating with

SX AR-P 3500/6

4000 rpm, 60 s2.0 µm

Tempering (± 1 °C) 100 °C, 2 min, hot plate

95 °C, 30 min, convection oven

UV exposure Broadband UV bis 490 nmExposure dose (E0, BB-UV stepper) 488 nm Laser

40 mJ/cm² 2 J/cm²


AR 300-26, 1 : 160 s

Rinse DI-H2O, 30 s


Generation of e.g. semi-conductor properties


Positive Photoresist for Holography SX AR-P 3500/6

Resist / Developer AR 300-26SX AR-P 3500/6 undiluted up to 1 : 1

For the production of holographic reliefs or structures, exposure wavelengths up to 500 nm and in particular the 488 nm laser wavelength may be used. Sensitivity is in this case however low, as compared to i- or g-line exposure. The resist may also be used without restrictions in the BB-UV.

This resist formulation is currently successfully processed by our customers, may however also be modified accor-ding to new customer’s requirements.


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Process chemicals

Properties I


Characterisation

Process parameters

Resist structures Resist structures (thermally stable)

Parameter / SX AR-P 3500/8Solids content (%) 27Viscosity 25 °C (mPas) 20Film thickness/4000 rpm (µm) 1.4Resolution (µm) 0.8Contrast 3.0Flash point (°C) 42Storage 6 month (°C) 10 - 18

positive photoresist for high-temperature application up to 300 °C Experimental sample/custom-made product

- broadband, i-line, g-line- high plasma resistant, thermally stable up to 300 °C

- suitable for: high-temperature 2-layer lift-off processes as well as plasma etching and implantation processes- combination of poly(hydroxystyrene-co-MMA)- naphthoquinone diazide - safer solvent PGMEA


N1 144.0N2 13.6


(5 Pa. 240-250 V Bias)

Ar-sputtering 10O2CF4

80 CF4 + 16 O2

120

Substrate Si 4“ waferTempering 95 °C, 2 min, hot plateExposure i-line stepper (NA: 0,65)Development AR 300-47, 4 : 1, 1 min, 22 °C

7 µm trenches with SX AR-P 3500/8

Adhesion promoter AR 300-80Developer AR 300-47Thinner AR 300-12Remover AR 300-76, AR 600-70

Thermostable Positive Photoresist SX AR-P 3500/8

10 µm webs of SX AR-P 3500/8 after a hard bake of 280 °C

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Process conditionsThis diagram shows exemplary process steps for resist SX AR-P 3500/68 All specifications are guideline values which have to be adapted to own specific conditions. For further information on processing “Detailed instruc-tions for optimum processing of photoresists”. For recommendations on waste water treatment and general safety instructions ”General product information on Allresist photoresists”.

Coating SX AR-P 3500/84000 rpm, 60 s1,4 µm

Tempering (± 1 °C) 100 °C, 2 min, hot plate

95 °C, 30 min, convection oven

UV exposure Broadband UV Exposure dose (E0, BB-UV stepper)

200 mJ/cm²


AR 300-47, 1 : 160 s

Rinse DI-H2O, 30 s




Thermostable Positive Photoresist SX AR-P 3500/8

Resist / Developer AR 300-35SX AR-P 3500/8 1 : 1

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Process chemicals

Properties I


Characterisation

Process parameters


Parameter / SX AR-P 3740/4Solids content (%) 30Viscosity 25 °C (mPas) 25Film thickness/4000 rpm (µm) 1,4Resolution (µm) 0,4Contrast 10Flash point (°C) 42Storage 6 month (°C) 10 - 18

High-contrast positive photoresist, also for dip coating Experimental sample/custom-made product

- Broadband UV, i-line, g-line

- high sensitivity, highest resolution up to 0.4 µm

- very high contrast, excellent dimensional accuracy

- particularly well suited for dip coating of large substrates

- plasma etching stable, thermally stable up to 120 °C




N1 0N2 316.4


(5 Pa. 240-250 V Bias)


80 CF4 + 16 O2

90

Substrate Si 4“ waferTempering 95 °C, 90 s, hot plateExposure i-line stepper (NA: 0,65)Development AR 300-47, 60 s, 22 °C


Developer AR 300-47Thinner AR 300-12Remover AR 300-76, AR 600-70

Positive Photoresist for Sub-µm SX AR-P 3740/4

SX AR-P 3740/4Siemens star at a film thickness of 3.0 µm

SX AR-P 3740/40.4 µm resolution at a film thickness of 1.2 µm

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Coating withSX AR-P 3740/4

4000 rpm, 60 s1.4 µm

Tempering (± 1 °C) 100 °C, 1 min hot plate or 95 °C, 25 min convection oven

UV exposure Broadband UV, 365 nm, 405 nm, 436 nmExposure dose (E0, BB-UV stepper): 60 mJ/cm²


AR 300-4760 s

Rinse DI-H2O, 30 s

Post-bake(optional)

115 °C, 1 min hot plate or 110 °C, 25 min convection oven


Generation of e.g. semi-conductor properties or chromium etching on scale divisions


Positive Photoresist for Sub-µm SX AR-P 3740/4

This resist formulation is currently successfully processed by customers, may however also be modified according to new customer’s requirements.

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Properties I


Characterisation

Parameter / SX AR-N 4340/7Solids content (%) 25Viscosity 25 °C (mPas) 38Film thickness/4000 rpm (nm) 1.4Resolution (µm) 0.7Contrast 5.0Flash point (°C) 42Storage 6 month (°C) 10-18

negative photoresist for one- and two-layer systems Experimental sample/custom-made product

- i-line, g-line, deep UV (248 – 266 nm)- highest sensitivity, high resolution- good adhesion properties, high contrast, chemically enhanced- undercut profiles (lift-off) possible- may be used with AR-BR 5400 as 2-layer system- plasma etching stable, thermostable up to 300 °C- polyhydroxystyrene polymer, higher photosensitivity- acid generator and aminic crosslinker- safer solvent PGMEA

Glass transition temperature (°C) 118Dielectric constant 3.1 Cauchy-Koeffizienten N0 1.55

N1 82.6N2 0


(5 Pa. 240-250 V Bias)

Ar-sputtering: 7O2 175CF4 45

80 CF4 + 16 O2

98

Substrate Si 4“ waferSoft bake 90 °C, 60 s, hot plateExposure i-line stepper (NA: 0.65)

Development AR 300-47, 60 s, 22 °C

Adhesion promoter AR 300-80Developer AR AR 300-47

Thinner AR 300-12Remover AR 600-71, AR 600-70

Thermostable Negative Resist SX AR-N 4340/7

Process parameters


Resist structures of SX AR-N 4340/7 after tempering at 300 °C

SX AR-N 4340/70.7 µm resolution at a film thickness of 1.4 µm

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Thermostable Negative Resist SX AR-N 4340/7

An undercut of the resist structure (lift-off) can be obtained with a prolonged development after minimum exposu-re. The undercut and structures with vertical side walls remain even at high temperatures of up to 300 °C. This high temperature stability is also used in the two-layer system with AR-BR 5400 and allows intensive sputtering proces-ses at very high temperatures (see product information AR-BN 5400).


processing instructions for the generation of lift-off structures and supplementary information

Coating withSX AR-N 4340/7

4000 rpm, 60 s, 1.4 µm

Soft bake (± 1 °C) 90 °C, 2 min hot plate or 85 °C, 30 min convection oven

UV exposure i-line stepperExposure dose (E0, i-line stepper):

25 mJ/cm²

Crosslinking bake 95 °C, 2 min hot plate or



AR 300-47 60 s

Rinse DI-H2O, 30 s


Generation of e.g. semi-conductor properties or lift-off


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Process chemicals

Properties I


Characterisation

Structurable glass waferResist structures

Parameter / AR-PC 5000/40Solids content (%) 50Viscosity 25°C (mPas) 45Film thickness/4000 rpm (µm) 5.0Resolution (µm. 2-Layer) 20Contrast (2-Layer) 1Flash point (°C) 15Storage 6 month (°C) 15 - 22

KOH and HF resistant protective coating for wafer backside protection Experimental sample/custom-made product

- not light-sensitive > 300 nm, no yellow light required- stable protective film for protecting the wafer backside during etching of the front up to 60 °C, e.g. with 40 % caustic potash, 50 % hydrofluoric acid, BOE- in two-layer system structurable with AR-P 3250 or AR-N 4400-05/10; plasma etching resistant- high-melting modified hydrocarbons- solvent ethylbenzene

Glass transition temperature °C 65Dielectric constant -Cauchy-Koeffizienten N0 -

N1 -N2 -


(5 Pa. 240-250 V Bias)

Ar-sputtering -O2 185CF4 68

80 CF4 + 16 O2

120


Developer X AR 300-74/5

Thinner X AR 300-74/1

Remover

Protective Coating SX AR-PC 5000/40

Two-layer structuring with SX AR-PC 5000/40 and AR-P 3250 (on the left re-sist mask, on the right after etching in glass)

A 5 µm thick layer with glass wafer provided by the IDM

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Process conditions - One-layer processThis diagram shows exemplary process steps for the protective coating SX AR-PC 5000/40. All specifications are guideline values which have to be adapted to own specific conditions.


Coating: A spin speed of 1000 rpm is recommended, since wafer edges are optimally protected due to the slight wrapping effect at a film thickness of approx. 10 µm during spin deposition.

Etch process: The protective layer is not attacked over hours, problems may only arise at etch bath temperatures above 50 °C.

Note: The protective film is not dissolved in acetone or isopropanol. For removal or cleaning of equipment, the respective thinner has to be used.

Pre-coating with

AR 300-80

Adhesive bonding at 2000 rpm, resulting film thickness 15 nm

1. Soft bake (± 1 °C) 180 °C, 2 min hot plate or


Coating protective filmwith SX AR-PC 5000/40

3500 rpm, 60 s , 5.5 µm

2. Softbake (± 1 °C) 50 °C, 5 min hot plate50 °C, 25 min convection oven

Hard bake (optional) 95 °C, 5 min hot plate or 25 min convection oven for higher etch stability

Removal AR-PC 5000/40 X AR 300-74/1, 30 s

Processing instructions

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Coating: A spin speed of 1000 rpm is recommended, since wafer edges are optimally protected due to the slight wrapping effect at a film thickness of approx. 10 µm during spin deposition.

Etch process: The protective layer is not attacked over hours up to 50 °C, problems may only arise at etch bath temperatures above 60 °C.

Note: The protective film is not dissolved in acetone or isopropanol. For removal or cleaning of equipment, the respective thinner has to be used.

Pre-coating with

AR 300-80


1. Soft bake (± 1 °C) 180 °C, 2 min hot plate or 180 °C, 25 min convection oven

Coating protective filmwith SX AR-PC 5000/40

3500 rpm, 60 s , 5.5 µm

2. Soft bake (± 1 °C) 50 °C, 5 min hot plate 50 °C, 25 min convection oven

Coating AR-P 3250 1000 rpm, 10 µm

3. Tempering (± 1 °C) 50 °C, 5 min hot plate or50 °C, 40 min, convection oven

UV exposure Broadband UV, 365 nm, 405 nm, 436 nmExposure dose (E0, BB-UV stepper): 450 mJ/cm²


1. AR-P 3250 with AR 300-26 (1 : 1), 60 s2. SX AR-PC 5000/40 with X AR-300-74/5, 10 s

Rinse / Stop DI-H2O, 30 s / stopper AR 600-60/1, 30 s

Removal AR-P 3250 (optional) AR 300-73, 60 s


Etching with 50 % hydrofluoric acid

Removal AR-PC 5000/40 X AR 300-74/1, 30 s


Process conditions - Two-layer processThis diagram shows exemplary process steps for the protective coating SX AR-PC 5000/40. All specifications are guideline values which have to be adapted to own specific conditions.


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Process chemicals

Properties I


Characterisation

Process parameters

Resist structures

Parameter / AR-PC 5000/80.2Solids content (%) 10Viscosity 25°C (mPas) 19Film thickness/4000 rpm (µm) 0.4Resolution (µm) -Contrast -Flash point (°C) 52Storage 6 month (°C) 8 - 12

thermally stable resist, also applicable as protective coating Experimental sample/custom-made product

- not light-sensitive > 300 nm, no yellow light required- thin protective film for surface protection- plasma etching resistant, thermally stable up to 450 °C - applicable as sensor material or insulating layer- structurable in two-component system with AR-P 3500 T- polyimide- safer solvent PGMEA and N-methyl pyrrolidone

Glass transition temperature °C 170Dielectric constant 2.9Cauchy-Koeffizienten N0 1.581

N1 146.7N2 0


(5 Pa. 240-250 V Bias)


80 CF4 + 16 O2

186

Substrat Si 4“ waferSoft bake 150 °C, 2 min, hot plate

Adhesion promoter AR 300-80Developer 1-layer system: -

2-layer system: AR 300-46Thinner X AR 300-12/3

Remover AR 300-76, 300-47

Polyimide Resist SX AR-PC 5000/80.2

Resist structures of AR-PC 5000/80.2 After processing in two-component system with AR-P 3510 T

Structural formula

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Process conditions - One-layer processThis diagram shows exemplary process steps for resist SX AR-PC 5000/80.2. All specifications are guideline values which have to be adapted to own specific conditions.

Polyimide Resist SX AR-PC 5000/80.2

If SX AR-PC 5000/80.2 is only required as protective coating, as sensor material or for insulation purposes, the process is finished after the 2nd tempering step.

Pre-coating with

AR 300-80


1. Soft bake 180 °C, 2 min hot plate or


Coating protective filmwith SX AR-PC 5000/80.2

1000 rpm, 60 s, 0.8 µm



Removal AR-PC 5000/80.2(optional)

AR 300-76 or O2 plasma ashing


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For a two-component structuring however, an additional coating with photoresist is necessary. The two-compo-nent system can be developed in one step after exposure.

Developer AR 300-46 begins to dissolve exposed areas of AR-P 3540 T as usual and then attacks the underlying polyimide in anisotropic manner, i.e. the structures in polyimide widen only marginally. A prolonged exposure (> 1.5 min) however results in a pronounced undercut.

Pre-coating with

AR 300-80


1. Soft bake 180 °C, 2 min hot plate or 180 °C, 25 min convection oven

Coating protective filmwith SX AR-PC 5000/80.2

1000 rpm, 60 s, 0.8 µm


95 °C °C, 30 min convection oven

Coating AR-P 3540 T 4000 rpm, 1.4 µm


UV exposure Broadband UV, 365 nm, 405 nm, 436 nmExposure dose (E0, BB-UV stepper): 120 mJ/cm², 1,4 µm

Development of both resist films(21-23 °C ± 0.5 °C) puddle

AR 300-46, 40 s

Rinse DI-H2O, 30 s

Flood exposure Broadband UV, 240 mJ/cm²

Removal AR-P 3540 T AR 300-47, 20 s Only polyimide structures remain

Removal AR-P 5000/80.2(optional)

AR 300-76 or O2 plasma ashing


Process conditions - Two-layer processDieses Schema zeigt ein Prozessierungsbeispiel für den Resist SX AR-PC 5000/80.2. Die Angaben sind Richtwerte, die auf die eigenen spezifischen Bedingungen angepasst werden müssen.

Polyimidresist SX AR-PC 5000/80.2

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Process chemicals

Properties I


Characterisation

Process parameters


Parameter / SX AR-P 5000/82.7Solids content (%) 15Viscosity 25°C (mPas) 25Film thickness/4000 rpm (µm) 0.8

Resolution (µm) 1.5Contrast 2Flash point (°C) 53Storage 6 month (°C) 8 - 12

thermally stable positive resist for plasma/implantation processes Experimental sample/custom-made product

- i-line, g-line, BB-UV- very high plasma etching stability, thus well suited for plasma and implantation processes- thermally stable up to 450 °C - no curing required- combination of polyimide and naphthoquinone diazide - safer solvent PGMEA and N-Ethylpyrrolidon

Glass transition temperature °C 170Dielectric constant 2.9Cauchy coefficients N0 1.609

N1 58.9N2: 248.3


(5 Pa. 240-250 V Bias)

Ar-sputte-ring

5

O2 199CF4 41

80 CF4 + 16 O2

188

Substrate Si 4“ waferSoft bake 85 °C, 2 min, hot plateExposure Maskaligner MJB 3, contact exposureDevelopment AR 300-26, 1 : 2, 90 s, 22 °C

SX AR-P 5000/82.71.5 µm resolution after deve-lopment of a 0.8 µm film


Developer AR 300-26Thinner X AR 300-12/3Remover AR 300-76, 300-73

Polyimide Photoresist SX AR-P 5000/82.7

Resist structures at film thickness of 10 µm

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The addition of the photosensitive component generates a photo-structurable polyimide. The first tempering step (softbake) may thus not be performed at temperatures above 100 °C.

Pre-coating with

AR 300-80

Adhesive bonding, resulting film thickness 15 nm

1. Soft bake 180 °C, 2 min hot plate or 180 °C, 25 min convection oven

Coating withSX AR-P 5000/82.7

4000 rpm, 60 s , 0.8 µm


UV exposure g-line Stepper (Broadband UV, 365 nm)Exposure dose (E0, BB-UV stepper): 200 mJ/cm², 1.6 µm


AR 300-26, 1 : 22 min

Rinse DI-H2O, 30 s

Post-bake Up to 170 °C, 1 min hot plate (removal just still possible)(up to 300 °C possible, but no removal any more)





Process conditionsThis diagram shows exemplary process steps for resist SX AR-P 5000/82.7. All specifications are guideline values which have to be adapted to own specific conditions. For recommendations on waste water treatment and general safety instructions ”General product information on Allresist photoresists”.

Polyimide Photoresist SX AR-P 5000/82.7

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Resist structures

Parameter / SX AR-P 5900/4Solids content (%) 26Viscosity 25 °C (mPas) 24Film thickness/4000 rpm (µm) 1.4Resolution (µm) 2.0Contrast 3.0Flash point (°C) 42Lagerung 6 Monate (°C) 10 - 18

positive photoresist, also applicable as protective coating Experimental sample/custom-made product

- broadband-UV, i-line, g-line- stable in alkaline media, layer withstands 10 minutes in 2 n sodium hydroxide - very good adhesion, also applicable as protective coating- plasma etching stable- combination of novolac and naphthoquinone diazide with alkali-resistant components- safer solvent PGMEA


N1 164.7N2 0


(5 Pa. 240-250 V Bias)


80 CF4 + 16 O2

83

Substrate Si 4“ waferSoft bake 100 °C, 3 min, hot plateExposure g-line stepper (NA: 0.56)Development 2 n NaOH, 1 min, 22 °C


Developer 2 n NaOHThinner AR 300-12Remover AR 300-76

Alkali-stable Positive Resist SX AR-P 5900/4

SX AR-P 5900/4Resist structure after treatment with 2 n NaOH

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Coating withAR-P 5900/4

4000 rpm, 60 s 1.4 µm

Soft bake (± 1 °C) 100 °C, 3 min hot plate or


UV exposure Broadband UV, 365 nm, 405 nm, 436 nmExposure dose (E0, BB-UV stepper):

> 1000 mJ/cm²


2 n NaOH1 min

Rinse DI-H2O, 30 s

Post-bake(optional)

Only required if used as protective coating without structuring (max. at 130 °C)

Customer-specifictechnologies

Generation of e.g. semi-conductor properties or etching with alkaline media


Instead of developer AR 300-26 (undiluted), also 1 – 2 n sodium hydroxide may be used. To prevent a washing off of structures during the rigid development process, the use of adhesion promoter AR 300-80 is recommended.

Due to the high alkali-stability, long exposure times must be scheduled.

Resist structures should not be tempered above 105 °C to prevent the converging of structures. If this resist is only used as protective coating, a post-bake at 130 °C is recommended to improve alkaline stability.


Process conditionsThis diagram shows exemplary process steps for SX AR-P 5900/4 resists. All specifications are guideline values which have to be adapted to own specific conditions. For further information on processing “Detailed instruc-tions for optimum processing of photoresists”. For recommendations on waste water treatment and general safety instructions ”General product information on Allresist photoresists”.

Alkali-stable Positive Resist SX AR-P 5900/4

processing instructions and supplementary information

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Parameter / SX AR-N 7530/1Solids content (%) 7Viscosity 25 °C (mPas) 2Film thickness/4000 rpm (nm) 80Resolution bester Wert (nm)

30

Contrast 8Flash point (°C) 42

Storage 6 month (°C) 14 - 20

White light e-beam resist for mix & match, otherwise analogous to ar-n 7520Experimental sample/custom-made product

- e-beam, middle and deep UV (no yellow light required)- short writing times, very high contrast- mix & match processes between e-beam and UV exposure 248-290 nm, negative in UV - highest resolution, very process-stable (no CAR)- plasma etching resistant, temperature-stable up to 140 °C- novolac, organic crosslinker - safer solvent PGMEA


N1 123.2N2 0


(5 Pa. 240-250 V Bias)


80 CF4+ 16 O2

90

Substrate Si 4“ waferSoft bake 85 °C, 90 s, hot plateExposure Raith Pioneer 30 kVDevelopment AR 300-47, 60 s, 22 °C

SX AR-N 7530/1 35 nm bars at a film thickness of 200 nm


Developer AR 300-47, AR 300-26Thinner AR 300-12Remover AR 600-71, AR 300-73

Negative E-Beam Resist SX AR-N 7530/1

SX AR-N 7530/1 1 x 1 µm squares at a film thickness of 250 nm

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Coating withAR-P 7530/1

4000 rpm, 60 s,0.1 µm

Soft bake (± 1 °C) 85 °C, 1 min hot plate or 85 °C 30 min convection oven

E-beam exposure Raith Pioneer, acceleration voltage 30 kVExposure dose (E0): 30 µC/cm² , 100 nm space & lines

Post-bake(optional)

85 °C, 1 min hot plate or 85 °C, 25 min convection oven for slightly enhanced sensitivity


AR 300-4760 s

Rinse DI-H2O, 30 s


z.B. Generation of e.g. semi-conductor properties



Process conditionsThis diagram shows exemplary process steps for SX AR-N 7530/1 resists. All specifications are guideline values which have to be adapted to own specific conditions. For further information on processing “Detailed inst-ructions for optimum processing of e-beam resists”. For recommendations on waste water treatment and general safety instructions „General product information on Allresist e-beam resists”.

Developer AR 300-26 AR 300-35 AR 300-40AR-N 7530/1 1 : 1 - 300-47


processing instructionsThe resist is predestined for e-beam exposure, but also suitable for deep UV exposure. Mix & match processes are pos-sible if both exposure methods are carefully coordinated. During e-beam exposure, the resist works in a negative mode. The same applies if the resist is exposed to deep UV (248-290 nm). If an additional tempering step (85 °C, 2 min hot plate) is performed after image-wise UV-exposure, the sensitivity can be slightly enhanced.

The developer dilution should be adjusted with DI water such that the development time is in a range between 20 and 120 s at 21 – 23 °C. Via dilution of the developer, contrast and development rate can be influenced to a large degree. A stronger dilution results in an increased contrast and a reduced development rate.This resist formulation is currently successfully processed by customers, may however also be modified according to new customer’s requirements.

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Structure resolution

Exposure dose series of SX AR-N 7700/30, lowest dose 10.14 µCi/cm2

Parameter / X AR-N 7700/30

Solids content (%) 19Viscosity 25 °C (mPas) 9Film thickness/4000 rpm (µm) 0.4Resolution (µm) 0.15Contrast 5.0Flash point (°C) 42Storage 6 month (°C) 10 - 18

Chemically enhanced e-beam resist with very high sensitivity Experimental sample/custom-made product

- e-beam, BB-UV - highest sensitivity, good resolution- good adhesion properties, high contrast, chemically enhanced- mix & match processes between e-beam and BB- UV are possible- plasma etching resistant, very process-stable - novolac with photosensitive acid generator and aminic crosslinker- safer solvent PGMEA

Glass transition temperature °C 108Dielectric constant 3.1Cauchy coefficients N0 1.604

N1 85.5N2 56.9


(5 Pa. 240-250 V Bias)

Ar-sputtering 8O2 168

CF4 3880 CF4

+ 16 O289

Substrate Si 4“ waferSoft bake 85 °C, 60 s, hot plateExposure Vistec Lion 20 kVDevelopment AR 300-475, 60 s, 22 °C


Developer AR 300-475Thinner AR 300-12Remover AR 300-76, AR 300-73

Negative E-Beam Resist X AR-N 7700/30

Sensitivity at 20 kV

SX AR-N 7700/30 150 nm bars at a film thickness of 300 nm. Not sufficiently cross-linked structures in the fore-ground, strong overexpo-sure (proxiwithy-effect) in the background

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Coating withX AR-N 7700/30

4000 rpm, 60 s0.4 µm

Softbake (± 1 °C) 90 °C, 1 min hot plate or 85 °C, 25 min convection oven

E-beam exposure Vistec Lion, acceleration voltage 20 kV E-beam exposure dose (E0): 6 µC/cm², 0.4 µmExposure dose (E0, BB-UV stepper): 20 mJ/cm², 0.4 µm

Crosslinking bake (± 1 °C) 110 °C, 2 min hot plate or 105 °C, 30 min convection oven

Development(21-23 °C ± 0.5 °C) puddle AR 300-475, 60 sRinse DI-H2O, 30 s

Post-bake (optional) 85 °C, 1 min hot plate or 85 °C, 25 min convection oven for slightly enhanced plasma etching stability

Customer-specifictechnologies

z.B. Generation of e.g. semi-conductor properties



Process conditionsThis diagram shows exemplary process steps for resist X AR-N 7700/30. All specifications are guideline values which have to be adapted to own specific conditions. For further information on processing “Detailed inst-ructions for optimum processing of e-beam resists”. For recommendations on waste water treatment and general safety instructions „General product information on Allresist e-beam resists”.

Negative E-Beam Resist X AR-N 7700/30


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Parameter / SX AR-N 7730/1Solids content (%) 8Viscosity 25 °C (mPas) 2Film thickness/4000 rpm (µm) 0.1Resolution best value (nm) 80Contrast 5

Flash point (°C) 42Storage 6 month (°C) 8 - 12

White light e-beam resist with high gradation, otherwise analogous ar-n 7700 Experimental sample/custom-made product

- e-beam, deep UV; CAR (no yellow light required)

- high gradation for vertical resist profiles for

diffractive optics and holograms

- negative in the UV range 248-265 nm, with high resolution

- plasma etching resistant, thermally stable up to 140 °C

- novolac, acid generator, crosslinker



N1 69.9 N2 64.9


(5 Pa. 240-250 V Bias)


80 CF4+ 16 O2

89

Substrate Si 4“ waferSoft bake 85 °C, 90 s, hot plateExposure Vistec Lion, 12,5 kVDevelopment AR 300-47, 4 : 1, 60 s, 22 °C

SX AR-N 7730/1 80 nm lines at a film thickness of 350 nm


Developer AR 300-47, 300-26Thinner AR 300-12Remover AR 300-76, AR 300-73


SX AR-N 7730/1 300 nm x 2000 nm rectang-les at different doses

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Coating withAR-N 7730/1

4000 rpm, 60 s 0.4 µm

Soft bake (± 1 °C) 85 °C, 1 min hot plate or 85 °C 30 min convection oven

E-beam exposure Vistec Lion, acceleration voltage 30 kVE-beam exposure dose (E0):

35 µC/cm²

Crosslinking bake 105 °C, 5 min, hot plate or 100 °C, 60 min convection oven


AR 300-47, 4 : 1 60 s

Rinse DI-H2O, 30 s

Hardening of structures up to 300 °C (optional)

Flood exposure 150 mJ/cm², bake 115 °C, 1 min hot plate

Post-bake(optional)

120 °C, 1 min hot plate or 120 °C, 25 min convection ovenfor slightly enhanced sensitivity


Generation of holograms and diffractive optics



Process conditionsThis diagram shows exemplary process steps for resist SX AR-N 7730/1. All specifications are guideli-ne values which have to be adapted to own specific conditions. For further information on processing “Detailed instructions for optimum processing of e-beam resists”. For recommendations on waste water treat-ment and general safety instructions ”General product information on Allresist e-beam resists”.

Developer AR 300-40AR-N 7730/1 300-475 undil.


optimal suitable

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Authors: Matthias and Brigitte Schirmerassisted by Dr. Christian KaiserLayout: Ulrike Dorothea SchirmerTranslation: S.K. Hemschemeier

Copyright © 2017 Allresist

We deliver our products within 1 week ex work, in-stock stock items are delivered immediately or on the desired date. Resists are available in package sizes of ¼ , 0,5 ,1 , 2,5 , 6 x 1 , 4 x 2,5 and corresponding process chemicals in package sizes of 1 , 2,5 , 5 , 4 x 2,5 , 4 x 5 . Test samples/smallest quantities of 30 ml and 100 ml are possible.Please request our price lists.

Product Portfolio Experimental Samples

Special product

Do / µm 4000 rpm

type Characteristic properties / application

resoluti-on [µm] *

Con-trast

Exposure thinner Deve-loper

re-mover

market-ready experimental samples

x ar-p 3220/7 6.0

posit

ive

temperature-/ plasma et-ching stable thick resist 2 2

i-line. g-line, BB-UV

300-12 300-26 300-76 300-72

x ar-p 5900/4 1.4 positive photoresist, alkali-

stable up to pH 13 1 2 i-line, g-line 300-12 300-26 600-70

x ar-n 7700/30 0.4 ne

g. highly sensitive, highest-resolution CA negative e-beam resist

0.2 5e-beam, deep UV

300-12 300-475 600-70 300-76

Special designs / Experimental samples

Sx ar-p 3500/6 2.0

posit

ive

positive photoresist for holography (488 nm) 1 3

i-line. g-line, BB-UV

300-12 300-47 600-70 300-76

Sx ar-p 3500/8 1,4 temeratur stable positive

photoresist up to 300 °C 1 3i-line. g-

line, BB-UV300-12 300-47 600-70

300-76

Sx ar-p 3740/4 1.4 positive photoresist, highly

process-stable, high contrast 0.6 5i-line. g-

line, BB-UV300-12 300-475 600-70

300-76

Sx ar-n 4340/7 1.4 ne

g. temperature stable nega-tive resist up to 270 °C (1-/2L-system)

0.5 5 i-line, g-line 300-12 300-47 300-76 600-71

Sx ar-pC 5000/40

5.0 - protective coating 40% KOH- and 50% HF-resistant

1 L: -

2 L: 10

1 L: -

2 L: 1

1 L: -

2 L: i-line300-74/1 300-26 300-74/1

Sx ar-pC 5000/80.2

0.4 -polyimide photoresist, protective coating for 2 L-patterning

1 L: -

2 L: 2

1 L: -

2 L: 1

1 L: -

2 L: i-line300-12/3 - 600-70

300-76

Sx ar-p 5000/82.7 0.8 -

polyimide photoresist, structurable and tempera-ture-stable

1.5 2 i-line 300-12/3 300-26 300-47

300-76 300-72

Sx ar-n 7530 new

0,1

nega

tive

white light e-beam resist like AR-N 7520 0.03 8

e-beam, deep UV

300-12 300-47 600-71

Sx ar-n 7730 new

white light e-beam resist like AR-N 7700 0.08 < 1.0 300-76

All resist systems show optimal adhesion features with adhesion promoter AR 300-80 which is applied prior to resist deposition.As

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3636

Allresist GmbHAm Biotop 14

15344 Strausberg

Tel.: +49 (0) 3341 35 93 - 0Fax: +49 (0) 3341 35 93 - 29

[email protected]

Allresist GmbHAm Biotop 14

15344 StrausbergGermany

Phone +49 (0) 3341 35 93 - 0 Fax +49 (0) 3341 35 93 - 29

[email protected]

Documents

Product information - Startseite - Allresist DE€¦ · We deliver our products within 2 week ex work or on the requested date. Package sizes for resists: ¼ l, 0.5 l (2 x ¼ l),